JP2008505343A - 集積回路チップのための宇宙線検出器 - Google Patents
集積回路チップのための宇宙線検出器 Download PDFInfo
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- JP2008505343A JP2008505343A JP2007523577A JP2007523577A JP2008505343A JP 2008505343 A JP2008505343 A JP 2008505343A JP 2007523577 A JP2007523577 A JP 2007523577A JP 2007523577 A JP2007523577 A JP 2007523577A JP 2008505343 A JP2008505343 A JP 2008505343A
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- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 title claims abstract description 190
- 230000003993 interaction Effects 0.000 claims abstract description 17
- 230000001960 triggered effect Effects 0.000 claims abstract 4
- 238000001514 detection method Methods 0.000 claims description 33
- 230000004044 response Effects 0.000 claims description 17
- 230000008859 change Effects 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 238000005259 measurement Methods 0.000 claims description 8
- 230000005641 tunneling Effects 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- 238000010586 diagram Methods 0.000 description 24
- 239000004020 conductor Substances 0.000 description 20
- 239000002245 particle Substances 0.000 description 9
- 201000000464 cone-rod dystrophy 2 Diseases 0.000 description 8
- 230000015654 memory Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 201000006754 cone-rod dystrophy Diseases 0.000 description 4
- 238000012937 correction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 235000017899 Spathodea campanulata Nutrition 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/14—Error detection or correction of the data by redundancy in operation
- G06F11/1402—Saving, restoring, recovering or retrying
- G06F11/1405—Saving, restoring, recovering or retrying at machine instruction level
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/0033—Radiation hardening
- H03K19/00338—In field effect transistor circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Quality & Reliability (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Computing Systems (AREA)
- Measurement Of Radiation (AREA)
Abstract
【選択図】なし
Description
図1を参照すると、チップ20は、入力信号を導体22で受信し、出力信号を出力導体28に与える回路24を含む。回路24は、多種の回路のいずれかを含み、多種の機能のいずれかを実行する。宇宙線検出器26は、チップ20に入る少なくともいくつかの宇宙線を検出する。宇宙線検出器26は、宇宙線検出の表示を回路24に与える。宇宙線検出信号は様々な方法で表示される。例えば、宇宙線検出信号が宇宙線検出器26から回路24までは導体上で論理ハイ電圧である一方で、同じ導体上の論理ロー電圧は宇宙線検出を表示しないが、このことが必須というわけではない。図1には示されない付加的な回路が宇宙線検出器26と回路24との間に存在してもよい。よって、宇宙線検出信号は、宇宙線検出器26と回路24との間で、その形態、状態またはその他の特徴を変化させてよい。用語「宇宙線」は、本明細書で使用されているが、チップ内の信号の電圧を変化させる様々な宇宙線または宇宙粒子を含むように広く解釈されることを意図している。
現在入手可能な、およびこれから作られる、様々なタイプの宇宙線検出器が使用される。現行の集積回路チップは、全ての活性要素を含み厚さが恐らく1ミクロンに過ぎないシリコンの上部層を有する。ナノテクノロジの進歩に伴い、作動厚さは減少すると考えられる。ソフトエラーを引き起こす宇宙線は、結果的にシリコン原子核を分裂させ、百ミクロンのオーダの長さの飛跡にわたり破片を電離しようとする。次に放出されるエネルギーは、数百万電子ボルトとなり、最終的な生成物は、各粒子に対して数電子ボルトのエネルギーを典型的に備える数百万の電子正孔対となる。様々なタイプの宇宙線検出器が、これらの電子正孔対を検出する。
宇宙線相互作用および検出に関して上述した様々な数字および詳細は正しいものと考えられるが、様々な理由に起因する近似または誤りに過ぎないかもしれない。しかし、本発明の原理はなおも適用される。
Claims (28)
- 第1先端部を備えるカンチレバーと、
第2先端部と、
前記第1先端部と第2先端部との間の距離を示す信号を、宇宙線相互作用事象によって引き起こされた場合に与えるための回路と、
を含む宇宙線検出器。 - 前記第1先端部は走査型トンネル顕微鏡構造の先端部である、請求項1に記載の装置。
- 前記回路は、前記第1先端部と第2先端部との間の電流を測定するための電流測定回路である、請求項1に記載の装置。
- 前記第1先端部と第2先端部との間の距離は、音響的な波面との相互作用に応答して変化する、請求項1に記載の装置。
- 前記カンチレバーの長さおよび剛性は、宇宙線相互作用事象に応答して前記第1先端部と第2先端部との間の距離を特性的に変化させ、そうでない場合はさせないように設計される、請求項1に記載の装置。
- 第1回路を含む活性領域と、
前記活性領域を支持する基板と、
第1宇宙線検出器と、
を含むチップ。 - 前記第1宇宙線検出器は前記活性領域内に存在する、請求項6に記載のチップ。
- 前記第1宇宙線検出器は前記基板内に存在する、請求項6に記載のチップ。
- 前記第1宇宙線検出器は、前記第1回路によって受信されるべき宇宙線検出信号を与える、請求項6に記載のチップ。
- 前記第1宇宙線検出器は、マイクロ・エレクトロ・メカニカル・システム(MEMS)宇宙線検出器である、請求項6に記載のチップ。
- 前記第1宇宙線検出器は、
第1先端部を備えるカンチレバーと、
第2先端部と、
前記第1先端部と第2先端部との間の距離を示す信号を、宇宙線相互作用事象によって引き起こされた場合に与えるための回路と、
を含む、請求項6に記載のチップ。 - 前記第1先端部は走査型トンネル顕微鏡構造の先端部である、請求項11に記載のチップ。
- 信号を与えるための前記回路は、前記第1先端部と第2先端部との間の電流を測定するための電流測定回路である、請求項11に記載のチップ。
- 前記第1宇宙線検出器はひずみゲージを含む、請求項6に記載のチップ。
- 前記第1宇宙線検出器は、電荷を集めるための分散したpn接合部を含む、請求項6に記載のチップ。
- 前記第1宇宙線検出器は光子検出器を含む、請求項6に記載のチップ。
- 前記第1宇宙線検出器は音波検出器である、請求項6に記載のチップ。
- 前記宇宙線検出器は第1宇宙線検出器であり、
前記チップは、
第2回路と、
前記第2回路に宇宙線検出信号を与えるための第2宇宙線検出器と、
をさらに含む、請求項6に記載のチップ。 - 前記第1回路および第2回路は各々、第1宇宙線検出信号および第2宇宙線検出信号を受信する、請求項18に記載のチップ。
- 第1チップを含み、
前記第1チップは、
第1回路を含む活性領域と、
前記活性領域を支持する基板と、
前記チップをパッケージ化するパッケージと、
を含み、
前記パッケージは第1宇宙線検出器を含む装置。 - 前記第1宇宙線検出器は、前記第1回路によって受信されるべき宇宙線検出信号を与える、請求項20に記載の装置。
- 前記第1宇宙線検出器は、
第1先端部を備えるカンチレバーと、
第2先端部と、
前記第1先端部と第2先端部との間の距離を示す信号を、宇宙線相互作用事象によって引き起こされた場合に与えるための回路と、
を含む、請求項20に記載の装置。 - 前記第1先端部は走査型トンネル顕微鏡構造の先端部である、請求項22に記載の装置。
- 信号を与えるための前記回路は、前記第1先端部と第2先端部との間の電流を測定するための電流測定回路である、請求項22に記載の装置。
- 前記第1宇宙線検出器はひずみゲージを含む、請求項20に記載の装置。
- 前記第1宇宙線検出器は、電荷を集めるための分散したpn接合部を含む、請求項20に記載の装置。
- 前記第1宇宙線検出器は光子検出器を含む、請求項20に記載の装置。
- 前記第1宇宙線検出器は音波検出器である、請求項20に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/882,917 US7309866B2 (en) | 2004-06-30 | 2004-06-30 | Cosmic ray detectors for integrated circuit chips |
US10/882,917 | 2004-06-30 | ||
PCT/US2005/023252 WO2007001307A2 (en) | 2004-06-30 | 2005-06-29 | Cosmic ray detectors for integrated circuit chips |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008505343A true JP2008505343A (ja) | 2008-02-21 |
JP4719220B2 JP4719220B2 (ja) | 2011-07-06 |
Family
ID=35512936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007523577A Expired - Fee Related JP4719220B2 (ja) | 2004-06-30 | 2005-06-29 | 集積回路チップのための宇宙線検出器 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7309866B2 (ja) |
JP (1) | JP4719220B2 (ja) |
KR (1) | KR100928604B1 (ja) |
CN (1) | CN101160536B (ja) |
DE (1) | DE112005001693B4 (ja) |
GB (1) | GB2430739B (ja) |
TW (1) | TWI285749B (ja) |
WO (1) | WO2007001307A2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US7526683B1 (en) * | 2005-06-01 | 2009-04-28 | Sun Microsystems, Inc. | Dynamic self-tuning soft-error-rate-discrimination for enhanced availability of enterprise computing systems |
EP1988694B1 (en) | 2007-05-04 | 2020-06-03 | Samsung Electronics Co., Ltd. | Method and apparatus for date-based integrated processing of data in mobile terminal |
US8179694B2 (en) * | 2008-03-14 | 2012-05-15 | International Business Machines Corporation | Magnetic induction grid as an early warning mechanism for space based microelectronics |
US8120131B2 (en) * | 2009-03-13 | 2012-02-21 | International Business Machines Corporation | Array of alpha particle sensors |
US9110804B2 (en) | 2012-11-20 | 2015-08-18 | Intel Corporation | On-die electric cosmic ray detector |
US9291660B2 (en) * | 2013-01-22 | 2016-03-22 | Globalfoundries Inc. | Method and apparatus for measuring alpha particle induced soft errors in semiconductor devices |
US9690578B2 (en) | 2013-02-20 | 2017-06-27 | Intel Corporation | High dose radiation detector |
KR20150040016A (ko) | 2013-10-04 | 2015-04-14 | 에스케이하이닉스 주식회사 | 코즈믹레이 검출기를 갖는 반도체 메모리 장치, 전자 장치, 및 그의 구동방법 |
US20170082689A1 (en) * | 2015-09-18 | 2017-03-23 | Altera Corporation | Systems and methods for particle detection and error correction in an integrated circuit |
US10797701B2 (en) * | 2018-01-03 | 2020-10-06 | Honeywell International Inc. | Compensating for degradation of electronics due to radiation vulnerable components |
Citations (3)
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US4199810A (en) * | 1977-01-07 | 1980-04-22 | Rockwell International Corporation | Radiation hardened register file |
US5265470A (en) * | 1987-11-09 | 1993-11-30 | California Institute Of Technology | Tunnel effect measuring systems and particle detectors |
US20030234430A1 (en) * | 2002-06-20 | 2003-12-25 | International Business Machines Corporation | Method and apparatus to make a semiconductor chip susceptible to radiation failure |
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US4110621A (en) * | 1977-03-23 | 1978-08-29 | Butler-Newton, Inc. | Tomography X-ray detector |
DE3841136A1 (de) * | 1988-12-07 | 1990-06-13 | Hoechst Ag | Strahlungsdetektor |
JPH02245632A (ja) | 1989-03-17 | 1990-10-01 | Olympus Optical Co Ltd | 局部真空計 |
US5079958A (en) * | 1989-03-17 | 1992-01-14 | Olympus Optical Co., Ltd. | Sensor having a cantilever |
US5235187A (en) * | 1991-05-14 | 1993-08-10 | Cornell Research Foundation | Methods of fabricating integrated, aligned tunneling tip pairs |
DE69522934T2 (de) * | 1995-02-07 | 2002-04-04 | Ibm | Messung der AFM Hebelarmauslenkung mit Hochfrequenzstrahlung und Dotierungsprofilometer |
US6118124A (en) * | 1996-01-18 | 2000-09-12 | Lockheed Martin Energy Research Corporation | Electromagnetic and nuclear radiation detector using micromechanical sensors |
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JP2001194461A (ja) * | 2000-01-07 | 2001-07-19 | Shimadzu Corp | 2次元アレイ型放射線検出器 |
US6995376B2 (en) * | 2003-07-01 | 2006-02-07 | International Business Machines Corporation | Silicon-on-insulator latch-up pulse-radiation detector |
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-
2004
- 2004-06-30 US US10/882,917 patent/US7309866B2/en not_active Expired - Fee Related
-
2005
- 2005-06-29 GB GB0626016A patent/GB2430739B/en not_active Expired - Fee Related
- 2005-06-29 KR KR1020077002374A patent/KR100928604B1/ko not_active IP Right Cessation
- 2005-06-29 DE DE112005001693.5T patent/DE112005001693B4/de not_active Expired - Fee Related
- 2005-06-29 TW TW094121870A patent/TWI285749B/zh not_active IP Right Cessation
- 2005-06-29 CN CN200580021288XA patent/CN101160536B/zh not_active Expired - Fee Related
- 2005-06-29 WO PCT/US2005/023252 patent/WO2007001307A2/en active Application Filing
- 2005-06-29 JP JP2007523577A patent/JP4719220B2/ja not_active Expired - Fee Related
-
2007
- 2007-11-07 US US11/936,636 patent/US20090057565A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4199810A (en) * | 1977-01-07 | 1980-04-22 | Rockwell International Corporation | Radiation hardened register file |
US5265470A (en) * | 1987-11-09 | 1993-11-30 | California Institute Of Technology | Tunnel effect measuring systems and particle detectors |
US20030234430A1 (en) * | 2002-06-20 | 2003-12-25 | International Business Machines Corporation | Method and apparatus to make a semiconductor chip susceptible to radiation failure |
Also Published As
Publication number | Publication date |
---|---|
KR20070036785A (ko) | 2007-04-03 |
TWI285749B (en) | 2007-08-21 |
CN101160536B (zh) | 2011-07-06 |
DE112005001693T5 (de) | 2007-06-06 |
GB2430739A (en) | 2007-04-04 |
JP4719220B2 (ja) | 2011-07-06 |
TW200606448A (en) | 2006-02-16 |
US20060000981A1 (en) | 2006-01-05 |
DE112005001693B4 (de) | 2017-10-19 |
CN101160536A (zh) | 2008-04-09 |
KR100928604B1 (ko) | 2009-11-26 |
GB2430739B (en) | 2009-11-04 |
US20090057565A1 (en) | 2009-03-05 |
WO2007001307A2 (en) | 2007-01-04 |
US7309866B2 (en) | 2007-12-18 |
GB0626016D0 (en) | 2007-02-07 |
WO2007001307A3 (en) | 2007-04-12 |
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