JP2008504714A5

JP2008504714A5 -

Info

Publication number: JP2008504714A5
Application number: JP2007519288A
Authority: JP
Filing date: 2005-06-23
Publication date: 2008-08-07

Claims

A method of processing a substrate, comprising:
The solvent liquid layer at least one reactive species Ru generated by dissociation by irradiation with light, and supplying to the surface of the substrate by solution injecting nozzle,
Using an energy source capable of dissociating the solution to generate reactive species, the energy source included in an enclosure with a baffle that blocks energy from colliding with the surface of the substrate. Energy is directed to at least a first portion of the solution layer on the surface of the substrate, and the baffle is less than a recombination length from the surface of the substrate;
A step of Ru reacting the first material on the substrate,
Removing the reacted first material from the substrate.

The method of claim 1, wherein the solution comprises at least one of a group consisting of H ₂ O ₂ or H ₂ O.

The method of claim 1, wherein the reactive species comprises at least one of a set consisting of O ₃ , O ₂ , OH, O, or OOH.

The method of claim 1, wherein the energy source is ultraviolet light.

The method of claim 1, wherein the energy source irradiates the solution before the solution contacts the surface of the substrate.

The method of claim 1, wherein the energy source irradiates the solution over at least a portion of the time that the solution contacts the surface of the substrate.

The method of claim 1, wherein the energy source is a light source having a wavelength of about 300 nm or less.

The method of claim 1, wherein the energy source is a light source having a wavelength of about 180 nm to about 220 nm.

The method of claim 1, wherein the energy source is a collimated light source .

The method of claim 1, wherein the energy source is a pulsed energy source .

The method of claim 1, wherein only a substantial portion of the first material exposed to the energy source is reacted.

The method of claim 1, wherein the solution layer comprises at least a 10 percent concentration of H ₂ O ₂ .

Before SL first material The method of claim 1 wherein the organic material.

Before SL first material The method of claim 13, wherein exposing through a pattern of the mask layer.

Supplying the solution layer on the surface before Symbol substrate The method of claim 1 including the step of supplying said solution through a dynamic liquid meniscus.

Further, the method according to claim 1, further comprising a step of rinsing the surface of the substrate.

A substrate support to a system for treating a base plate, a substrate supported thereon,
A solution dispensing nozzle;
A layer of solution supported on the surface of the substrate, the layer of solution being supplied to the surface of the substrate by the solution dispensing nozzle ;
An energy source capable of dissociating the solution to generate reactive species, the energy source housed in a container having a baffle that blocks energy from colliding with the surface of the substrate; An energy source directed to at least a first portion of the layer of the solution on the surface of the substrate, wherein the baffle is less than a recombination length from the surface of the substrate ;
A system comprising a control system coupled to the substrate support, the solution dispensing nozzle, and the energy source and capable of controlling operating parameters of the solution, the substrate support, and the energy source .

Prior Symbol energy source, the system of claim 17 wherein the light source.

Prior Symbol energy source, the system of claim 17 wherein the ultraviolet light source.

Before SL energy source is included in the proximity head, the layer of the solution, can be supported by the supported said surface of the substrate in the dynamic liquid meniscus between the proximity head and the surface of the substrate, The proximity head is
Multiple ports,
Proximity head surface ,
A vacuum source coupled to the proximity head ;
The system of claim 17 , comprising a second solution source coupled to the proximity head .

A system for etching an organic layer of the base inner plate,
A substrate support and a patterned mask layer supported on and formed on the organic layer, the first portion of the organic layer being exposed by the first portion of the pattern in the mask layer With substrate
A solution dispensing nozzle and a layer of solution supported on the upper surface of the substrate, wherein the solution layer is supplied to the upper surface of the substrate by the dispensing nozzle and the solution to generate at least one reactive chemical species A light source capable of dissociating , wherein the light source is included in an enclosure with a baffle that blocks light from impinging on the top surface of the substrate, and wherein the layer of the solution on the top surface of the substrate A light source directed to at least a first portion, wherein the baffle is less than a recombination length from the top surface of the substrate ;
A system comprising a control system coupled to the substrate support, the solution dispensing nozzle, and the light source and capable of controlling operating parameters of the solution, the substrate support, and the light source .