JP2008306209A - Substrate equipped with minute line - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To constitute the dot and a line of a fine-sized metal, and the like, on a substrate, by making the radius of a microplasma as small as possible to reduce its calorific capacity for preventing damages to the substrate at emission of a plasma jet, as well as, making metals or the like melt, vaporize or gasify, and making them blow them out together with the plasma jet. <P>SOLUTION: The substrate of a low melting point has a fine dot of a dotted material of 1 to 100 μm diameter with a molten, vaporized or gasified material deposited on the substrate of the low melting point in a dotted shape. A depositing method by the microplasma to form the dot or the line in a fine region on the substrate comprises steps of introducing the material and the plasma gas for deposition in a quartz tube; arranging an induction coil at the outer periphery of the quartz tube; applying a high-frequency voltage to the induction coil to melt, vaporize or gasify the material; and blowing out the plasma gas toward the substrate from the extremity of the capillary of the quartz tube having an inside radius of 100 μm or smaller. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention utilizes a small-diameter inductively coupled microplasma generated in the atmosphere, and does not damage a low-melting-point substrate. The present invention relates to a technique for forming dots or lines.

The current substrate microfabrication technology is roughly divided into a transfer method and a direct method. As typical methods, the former is a photolithography method, and the latter is a plasma processing method.
However, the photolithography process is a multi-step process that requires time, such as “substrate cleaning → resist application → exposure → deposition / etching → resist removal”, and has problems such as high cost.

On the other hand, the plasma processing method is a process of “fabrication of a fine pattern mask → coating on a substrate → CVD or PVD”, which is much simpler and less expensive than the photolithography method.
However, since the deterioration of the processed substrate over time due to heat conduction from the plasma is inevitable, the processed substrate type is limited to the high melting point (about 800 ° C. or higher) substrate.

In recent years, development of microanalysis systems such as Biochip, BioMEMS (Bio-related micro-electromechanical system) and μTAS has been progressing. These are mainly composed of microelectrodes, microcircuits, microchannels, and the like (all of which have a diameter and a width of 1 to 100 μm) manufactured on a low melting point substrate such as polyimide by making full use of lithography technology.
Thus, as the demand for these analysis systems increases in the future, it is desired to develop a technique for forming microelectrodes and microcircuits on a low melting point substrate more easily and at low cost.

As a conventional technique, for example, a nozzle hole having a wide hole portion at the tip and forming a passage for a plasma flame, a metal powder tube opening in the narrow hole portion of the nozzle hole, and a plasma flow direction in the wide narrow portion of the nozzle hole Plasma torch (see Patent Document 1) equipped with an open plastics powder insertion tube, twin (two sets) wires, specifically steel and copper wires are arc sprayed, An example in which the distribution of deposits and the lamellar structure are analyzed from the state of dispersion is described (see Patent Document 2).
In addition, a technique for forming an intermetallic compound of Ti—Al by arc spraying using a Ti cathode and an Al anode is described (see Patent Document 3).
However, none of them form minute dots or lines by microplasma, and do not solve the problems of the prior art described in the present application. Therefore, the above problems cannot be solved.
JP 47-34132 A YLZhu et al., `` Characterization Via image analysis of cross-over trajectories and inhomogeneity in twin wire arc spraying '', Surface and coating Technology 162 (2003) 301-308 Takayuki and two other authors, "Electrode phenomena investigation of wire arc spraying for preparation of Ti-Al intermetallic compounds", Thin Solid Films 407 (2002) 98-103

  The present invention solves the above-mentioned problems of the prior art, reduces the diameter of the microplasma as much as possible, and reduces its heat capacity to prevent damage to the low-melting-point substrate during plasma jet irradiation. An object of the present invention is to form dots and lines of fine metal or the like on a low melting point substrate by melting, evaporating or vaporizing the inserted metal wire or the like and ejecting it with a plasma jet.

The present inventors have found that it is possible to reduce the heat capacity by reducing the size of the plasma because the heat capacity of the plasma is reduced, that is, the heat capacity is a volumetric state quantity. Obtained.
Based on this knowledge, the present invention is characterized in that: 1) a material having a diameter of 1 to 100 μm in which a material that is melted, evaporated, or vaporized by microplasma is deposited in a dot shape on a low-melting point substrate is provided. 2) a low-melting-point substrate provided with fine dots, 2) a low-melting-point substrate having a diameter of 5 to 50 μm, 3) a material that is melted, evaporated and / or vaporized by microplasma A low-melting-point substrate having a fine line, characterized in that it is provided with a line of the material having a width of 1 to 100 μm deposited in a line on the melting point substrate, and 4) a line having a width of 5 to 50 μm. 5) The low melting point substrate according to 3), 5) The melting point of the substrate is 500 ° C. or less, 6) The low melting point substrate according to any one of 1 to 4, and 6) The melting point of the substrate is 300 ° C. or less. Specially 7. The low-melting-point substrate according to 5 above, 7) the low-melting-point substrate according to any one of 1 to 6 characterized in that the low-melting-point substrate is ejected by a microplasma jet having a diameter of 50 μm or less, and 8) deposition. The low melting point substrate according to any one of 1 to 7, wherein the material to be melted is a metal, a material containing a metal as a main component, or another material that is melted, evaporated, or vaporized by microplasma, 9) melting, The low melting point substrate according to any one of 1 to 8, wherein the deposit evaporated and / or vaporized and re-solidified on the substrate is a particulate deposit having an average particle diameter of 100 nm or less.

  In the present invention, 10) a material and plasma gas to be deposited in the quartz tube are introduced, an induction coil is disposed on the outer periphery of the quartz tube, and a high frequency is applied to the induction coil to melt and evaporate the material. Alternatively, vapor deposition is performed from a capillary tip of a quartz tube having an inner diameter of 100 μm or less toward the substrate, and a deposition method using microplasma that forms dots or lines in a minute region on the substrate, 11) Capillary tip The microplasma deposition method according to 10, wherein the inner diameter of the microplasma is 50 μm or less, 12) The microplasma deposition method according to 10 or 11, wherein the microplasma diameter is 50 μm or less, 13) The material to be deposited is melted, evaporated or vaporized, and the material is transferred from the capillary tip of the quartz tube to the substrate. The microplasma deposition method according to any one of 10 to 12, characterized by forming a line in which the material is deposited on a substrate while being jetted and relatively moving at a constant speed. A material for melting, evaporating or vaporizing the material and spraying the material from the tip of the capillary of the quartz tube toward the substrate, and intermittently moving the material to form dots on which the material is deposited on the substrate. 15) The microplasma deposition method according to any one of 10 to 12, 15) The microplasma according to any one of 10 to 14, wherein the deposition is performed on a substrate having a melting point of 500 ° C. or lower. 16) Deposition method by microplasma according to 15), wherein the melting point of the substrate is 300 ° C. or lower, 7) The deposition method using microplasma according to any one of 10 to 16, wherein the material to be deposited is a metal, a metal-based material, or another material that is melted, evaporated, or vaporized by microplasma. 18) The microplasma according to any one of 10 to 17, wherein the deposit remelted on the substrate by melting, evaporation and / or vaporization is a particulate deposit having an average particle size of 100 nm or less. A deposition method is provided.

  Further, the present invention relates to 19) a quartz tube having a capillary with an inner diameter of 100 μm or less, a material for deposition disposed in the quartz tube, a plasma gas introduced into the quartz tube, an induction coil disposed on the outer periphery of the quartz tube Characterized in that a high frequency is applied to the induction coil to generate microplasma to melt, evaporate or vaporize the material, and spray it from the capillary tip of a quartz tube having an inner diameter of 100 μm or less toward the substrate. 21. A microplasma deposition apparatus for forming dots or lines in a minute area on a substrate to be performed; 20) a microplasma deposition apparatus according to 19 wherein the capillary has an inner diameter of 50 μm or less; 21) quartz around the capillary 20. The deposition apparatus using microplasma according to 20, characterized in that a protective jacket made of is arranged. 2) The deposition apparatus using microplasma according to any one of 19 to 21, wherein the material to be deposited is a metal, a metal-based material, or another material that melts, evaporates or vaporizes by microplasma. 23) The microplasma deposition apparatus according to any one of 19 to 22, wherein the substrate facing the quartz capillary is a material having a melting point of 500 ° C. or lower, and 24) the melting point of the substrate is 300 °. 23. A microplasma deposition apparatus according to 23, characterized in that it is C or less; 25) A microplasma deposition apparatus according to 19-24, wherein the substrate material is a resin such as glass epoxy.

  By reducing the diameter of the microplasma as much as possible and reducing its heat capacity, the low melting point substrate is prevented from being damaged during the plasma jet irradiation, and the wires such as metals inserted into the microplasma are melted, evaporated or vaporized. By ejecting together with the plasma jet, it has an excellent effect that dots and lines of fine metal or the like can be formed on the low melting point substrate.

In the present invention, a metal wire or the like, which is a material deposited by microplasma, is inserted into a capillary for microplasma generation in advance, and a high frequency is applied to the induction coil at a high output, thereby melting or vaporizing the metal wire. A material such as a metal that has been melted, evaporated, or vaporized in this way is ejected from the tip of the capillary together with the flow of plasma gas (Ar) supplied into the capillary, and is deposited on a minute region of the low melting point substrate. is there.
As described above, since it is a condition that microplasma is generated between the outer peripheral coil and the inserted wire, the material to be deposited is mainly metal. However, since microplasma is generated even when other trace non-metals are present in the metal, all materials that are mainly composed of metal or other microplasma that are melted, evaporated or vaporized by the present invention are included in the present invention. It becomes the object of.

  A specific example will be described with reference to the drawings. In addition, this example was created in order to make an understanding of this invention easy, and this invention is not restrict | limited by this Example. That is, all other examples, modifications, and modes based on the technical idea of the present invention are included in the present invention.

FIG. 1 shows a schematic diagram of a microplasma generator used in the present invention. As the capillary 1 for generating inductively coupled microplasma, a capillary 1 having a thin tip was used. The capillary 1 was produced by subjecting a quartz tube having an inner diameter of 300 μm to an outer diameter of 1000 μm (wall thickness of 350 μm) to heat tension processing.
In order to generate inductively coupled plasma, it is necessary to load the capillary 1 into a high frequency application coil. When the inner diameter of the plasma generating quartz glass capillary 1 is smaller than 100 μm, the tip of the capillary 1 is easily damaged when the plasma generating quartz glass capillary 1 is directly loaded into the coil.

Therefore, it is desirable to cover the capillary 1 with a quartz tube protective jacket 2 having an inner diameter of 1100 μm and an outer diameter of 1500 μm. A copper coil 3 was installed at a portion about 10 mm from the tip of the quartz tube.
A raw metal wire 4 (diameter: 50 to 100 μm) was inserted from the root of the capillary 1. A plasma gas (Ar) was supplied into the capillary 1 from the gas supply port 5, and a high frequency was applied from the high frequency power source 6 to the high frequency coil 3 with an output of 10 to 20 W.

As a result, an induction electromagnetic field is generated inside the capillary 1 where the coil 3 is wound, and accordingly, the tungsten wire reaching the coil 3 is heated by high frequency induction heating. In this state, the igniter 7 was operated for a moment, a high voltage was applied between the tip of the insertion wire 4 and the coil to cause discharge, and the inductively coupled microplasma was turned on.
With the method described above, stable generation of microplasma with a minimum diameter of 20 μm is possible. The generated microplasma is ejected from the tip of the capillary 1 and reaches the substrate surface (not shown) installed at a distance of about 100 μm from the tip.

Next, a specific example of vapor deposition of refractory metal tungsten (melting point: about 3400 ° C.) on a glass epoxy substrate (melting point: about 300 ° C.) will be shown.
A tungsten wire 4 having a diameter of 50 μm was inserted into a quartz capillary 1 having an inner diameter of 50 μm at the tip. Plasma gas (Ar) was supplied into the capillary 1 and a high frequency was applied to the high frequency coil 3 with an output of 20 W to generate inductively coupled microplasma.
The surface of the inserted tungsten wire was melted or vaporized by induction heating by the applied high frequency and the heat of the generated microplasma, and was ejected from the capillary along the flow of plasma gas. As a result, it was deposited on a substrate arranged at a distance of 100 to 400 μm from the capillary tip.

FIG. 2 shows a scanning electron micrograph of the deposit produced by generating microplasma in the atmosphere for 1 minute on the glass epoxy substrate placed at a distance of 100 μm from the capillary tip under the above conditions (FIG. 2). −1: Observation photograph from the lateral direction, FIG. 2-2: Observation photograph from directly above)
A mountain-shaped substance having a bottom diameter of about 80 μm and a height of about 35 μm was deposited (dotted deposit). In the high-resolution scanning electron microscope observation of the deposit, the deposit was about 20 to 50 μm in diameter.
Further, when the deposit (dotted deposit) was observed in detail, it was found that the deposit was further composed of fine particles of about 100 nm (FIG. 2-3). Further, as apparent from FIGS. 2-1 and 2-2, the periphery of the region where tungsten was deposited was not damaged.

Even when the distance between the tip of the capillary 1 and the glass epoxy substrate was changed from 100 to 400 μm, tungsten was deposited in a mountain shape. The size, such as the diameter and height of the bottom surface, does not depend much on this distance.
In this method, not only tungsten but various materials can be deposited on a minute region of a low melting point substrate. It is possible to deposit a magnetic metal such as iron or a refractory metal such as platinum used for an electrode element.
In addition, the diameter and height of the deposit can be controlled by changing the size and generation time of the microplasma to be generated.

An iron wire with a diameter of 100 μm was inserted into the capillary 1, plasma gas (Ar) was supplied, a high frequency was applied to the coil with an output of 15 W, and it was produced by an inductively coupled microplasma with a diameter of about 20 μm generated for 10 seconds. A scanning electron micrograph of the deposit is shown in FIG.
Deposits having a diameter of about 10 μm were formed on a glass epoxy substrate placed at a distance of 100 μm from the capillary tip (FIG. 3: observation photograph from directly above).
The height of the deposit was dependent on the plasma generation time, and an iron deposit with a height of about 1 μm was obtained when it was generated for 10 seconds (Fig. 3-2: Observation photograph from the lateral direction). This iron deposit was also composed of spherical iron fine particles having a diameter of 20 to 100 μm (FIG. 3-3: high resolution scanning electron micrograph).

An example in which an iron dot pattern is formed on a substrate by applying the above-described dot forming technique will be described. A glass epoxy substrate was fixed to a substrate support connected to a triaxial manipulator. The distance between the substrate and the tip of the plasma torch was fixed to 100 μm, and microplasma with a diameter of 20 μm was generated for 10 seconds under the same conditions as in the above iron dot production example.
After the generation was completed, the substrate support was moved a distance of 100 μm in the horizontal or vertical direction, and microplasma was generated under the same conditions as described above. As a result, a pattern of iron dots having a diameter of about 10 μm formed with a pitch width of 100 μm was formed on the glass epoxy substrate (FIG. 4A).

  Next, an example in which an iron line pattern is formed on a substrate will be described. The distance between the substrate and the plasma torch tip was fixed to 100 μm, and microplasma was generated under the same conditions as described above. Immediately after the occurrence, the substrate was moved a distance of 1000 μm in the lateral direction at a speed of 10 μm / sec. A line pattern having a length of 1000 μm and a width of about 10 μm was formed on the substrate.

  As described above, by using microplasma having a diameter of 50 μm or less, a metal material can be easily deposited without damaging a substrate having a melting point of about 300 ° C. Moreover, it is possible to form metal dots and lines on the substrate by intentionally eluting the metal wires inserted into the microplasma. Therefore, the present invention is extremely useful as a substrate microfabrication technique.

It is a schematic diagram of a microplasma generator with a quartz protective jacket. It is a figure which shows the scanning electron microscope observation image from the horizontal direction of a mountain-shaped (dot shape) tungsten deposit. (FIG. 2-1 is a scanning electron microscope image of the tungsten deposit from the lateral direction, FIG. 2-2 is a scanning electron microscope image of the tungsten deposit from directly above, and FIG. 2-3 is the tungsten deposit. (This is a high resolution scanning electron micrograph of It is a figure which shows an iron dot scanning electron microscope observation image. (Fig. 3-1 is an image observed with a scanning electron microscope from directly above the iron dot, Fig. 3-2 is an image observed with a scanning electron microscope from the lateral direction of the iron dot, and Fig. 3-3 is a high resolution of the iron dot. (This is a scanning electron micrograph.) It is a figure which shows an iron dot pattern and an iron line pattern. (FIG. 4-1 is a dot pattern, and FIG. 4-2 is a line pattern.)

Explanation of symbols

1 Quartz Capillary for Micro Plasma Generation 2 Quartz Tube for Capillary Protection Jacket 3 Copper Coil 4 Metal Wire 5 Gas Supply Port 6 High Frequency Power Supply 7 Igniter

Claims (25)

  A low-melting-point substrate provided with minute dots, characterized by comprising dots of the material having a diameter of 1 to 100 μm deposited on a low-melting-point substrate in a material that melts, evaporates or vaporizes by microplasma.   The low melting point substrate according to claim 1, wherein the low melting point substrate is a dot having a diameter of 5 to 50 μm.   A low-melting-point substrate having a minute line, comprising a line of the material having a width of 1 to 100 μm in which a material that is melted, evaporated and / or vaporized by microplasma is deposited in a line on the low-melting-point substrate .   4. The low melting point substrate according to claim 3, wherein the low melting point substrate is a line having a width of 5 to 50 [mu] m.   The low melting point substrate according to claim 1, wherein the melting point of the substrate is 500 ° C. or less.   6. The low melting point substrate according to claim 5, wherein the melting point of the substrate is 300 ° C. or less.   The low-melting-point substrate according to claim 1, wherein the low-melting-point substrate is a dot or a line ejected by a microplasma jet having a diameter of 50 μm or less.   8. The low-melting-point substrate according to claim 1, wherein the material to be deposited is a metal, a material containing metal as a main component, or another material that is melted, evaporated, or vaporized by microplasma.   The low-melting-point substrate according to any one of claims 1 to 8, wherein the deposit melted, evaporated and / or vaporized and re-solidified on the substrate is a particulate deposit having an average particle size of 100 nm or less. .   Introduce material and plasma gas to be deposited in the quartz tube, place an induction coil on the outer periphery of the quartz tube, and apply high frequency to the induction coil to melt, evaporate or vaporize the material, and have a thickness of 100 μm or less. A deposition method using microplasma for forming dots or lines in a minute region on a substrate, characterized by spraying toward the substrate from a capillary tip of a quartz tube having an inner diameter.   The microplasma deposition method according to claim 10, wherein the capillary tip has an inner diameter of 50 μm or less.   The microplasma deposition method according to claim 10 or 11, wherein the diameter of the microplasma is 50 µm or less.   The material to be deposited is melted, evaporated or vaporized, and the material is ejected from the capillary tip of the quartz tube toward the substrate and is relatively moved at a constant speed to form a line in which the material is deposited on the substrate. The deposition method using microplasma according to any one of claims 10 to 12.   The material to be deposited is melted, evaporated or vaporized, and the material is sprayed from the capillary tip of the quartz tube toward the substrate, and this is intermittently moved relative to each other to form dots on which the material is deposited on the substrate. The deposition method using microplasma according to any one of claims 10 to 12.   The deposition method using microplasma according to claim 10, wherein the deposition is performed on a substrate having a melting point of 500 ° C. or less.   The deposition method using microplasma according to claim 15, wherein the melting point of the substrate is 300 ° C. or less.   The deposition method using microplasma according to any one of claims 10 to 16, wherein the material to be deposited is a metal, a metal-based material, or other material that is melted, evaporated, or vaporized by microplasma. .   18. The microplasma according to claim 10, wherein the deposit melted, evaporated and / or vaporized and re-solidified on the substrate is a particulate deposit having an average particle diameter of 100 nm or less. Deposition method.   A quartz tube having a capillary with an inner diameter of 100 μm or less, a material for deposition disposed in the quartz tube, a plasma gas introduced into the quartz tube, an induction coil disposed on the outer periphery of the quartz tube, A minute region on a substrate characterized in that a microplasma is generated by applying a high frequency to melt, evaporate or vaporize the material, and spray the material from the tip of a capillary of a quartz tube having an inner diameter of 100 μm or less toward the substrate. A microplasma deposition apparatus for forming dots or lines on the substrate.   The microplasma deposition apparatus according to claim 19, wherein the capillary has an inner diameter of 50 μm or less.   21. The microplasma deposition apparatus according to claim 20, wherein a quartz protective jacket is disposed around the capillary.   The deposition apparatus using microplasma according to any one of claims 19 to 21, wherein the material to be deposited is a metal, a metal-based material, or another material that is melted, evaporated, or vaporized by microplasma. .   23. The microplasma deposition apparatus according to claim 19, wherein the substrate facing the quartz capillary is a material having a melting point of 500 [deg.] C. or less.   The deposition apparatus using microplasma according to claim 23, wherein the melting point of the substrate is 300 ° C or lower.   25. The microplasma deposition apparatus according to claim 19, wherein the substrate material is a resin such as glass epoxy.