JP2008305989A - Substrate carrier - Google Patents

Substrate carrier Download PDF

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JP2008305989A
JP2008305989A JP2007151869A JP2007151869A JP2008305989A JP 2008305989 A JP2008305989 A JP 2008305989A JP 2007151869 A JP2007151869 A JP 2007151869A JP 2007151869 A JP2007151869 A JP 2007151869A JP 2008305989 A JP2008305989 A JP 2008305989A
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substrate
fork
body member
main body
transport
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JP4287889B2 (en
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Tadahiro Omi
忠弘 大見
Yusuke Muraoka
祐介 村岡
Yasuyoshi Miyaji
恭祥 宮路
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Tohoku University NUC
Future Vision Inc
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Tohoku University NUC
Future Vision Inc
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Priority to KR1020080053406A priority patent/KR20080108054A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/063—Transporting devices for sheet glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manipulator (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate carrier having a thin carrier fork which does not warp easily, especially a carrier fork which does not warp even if it is exposed to a high temperature such as baking temperature. <P>SOLUTION: The carrier fork 24 of a substrate carrier for carrying in and carrying out a substrate for a substrate baking furnace is constituted of a body member B of honeycomb structure, and a top plate member H bonded to the upper surface of the body member B and formed of a material having a thermal expansion coefficient smaller than that of the body member B. When the carrier fork 24 is exposed to a high temperature, an upward force for bending the carrier fork to the side of the top plate member H having a relatively small thermal expansion coefficient is generated due to the difference of thermal expansion coefficient between the body member B and the top plate member H. Since a downward force causing warpage of the carrier fork 24 (i.e., a downward force resulting from the weight of a substrate W to be supported or its own weight) is offset by the upward force, warpage of the carrier fork 24 is controlled. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

この発明は、半導体基板、液晶表示装置用ガラス基板、フォトマスク用ガラス基板、プラズマ表示用ガラス基板、光ディスク用基板等（以下、単に「基板」という）を基板焼成炉に対して搬出入する基板搬送装置に関する。   The present invention relates to a substrate for carrying a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a glass substrate for plasma display, a substrate for an optical disk (hereinafter simply referred to as “substrate”) to / from a substrate baking furnace. The present invention relates to a transport device.

一般に、基板に対して一連の処理を行う基板処理装置は、基板に対する所定の処理を実行する単位処理部（例えば、焼成処理部、洗浄処理部、レジスト塗布部、現像部等）と、単位処理部に対して基板を搬出入する基板搬送装置とから構成されている。基板搬送装置が所定の搬送順序で所定の処理部に基板を搬出入していくことで、基板に対する一連の処理が行われることになる。   In general, a substrate processing apparatus that performs a series of processing on a substrate includes a unit processing unit (for example, a baking processing unit, a cleaning processing unit, a resist coating unit, a developing unit, etc.) that performs predetermined processing on the substrate, and unit processing. And a substrate transfer device that carries the substrate in and out of the unit. The substrate transfer apparatus carries the substrate in and out of the predetermined processing unit in a predetermined transfer order, whereby a series of processes are performed on the substrate.

基板搬送装置は、一般に、基板を片持ち状態で支持する搬送フォークを備える。この搬送フォークは、従来においては、例えばＣＦＲＰ（炭素繊維強化樹脂）により形成されており、中実、中空、或いは断面が下方に開いたコの字状の構造とされることが一般的であった。   A substrate transport apparatus generally includes a transport fork that supports a substrate in a cantilever state. Conventionally, this transport fork is formed of, for example, CFRP (carbon fiber reinforced resin), and is generally solid, hollow, or has a U-shaped structure with a cross section opened downward. It was.

ところで、従来の搬送フォークにおいては、支持する基板の重みや搬送フォークの自重等のために撓みが発生するという問題があった。搬送フォークが撓むと、基板を水平状態で支持できなくなってしまう。撓みを低減すべく、搬送フォークの強度を高めようとすると、今度は搬送フォークに相当の厚みが必要となってしまう。   By the way, in the conventional conveyance fork, there existed a problem that a bending generate | occur | produces because of the weight of the board | substrate to support, the weight of a conveyance fork, etc. If the transport fork is bent, the substrate cannot be supported in a horizontal state. If the strength of the transport fork is increased in order to reduce the deflection, the transport fork needs to have a considerable thickness.

搬送フォークがアクセスする処理部においては、この搬送フォークの撓みや厚みを考慮した設計が必要となる。例えば、基板焼成炉のように、基板を多段状態で格納して処理する処理部においては、基板を格納する棚の間隔（ラックピッチ）を、搬送フォークの撓みや厚みを考慮して（すなわち、撓んだ搬送フォークが挿入可能なように）大きくとらなければならない。これにより、基板焼成炉が大型化してしまうという問題があった。   The processing unit accessed by the transport fork needs to be designed in consideration of the deflection and thickness of the transport fork. For example, in a processing unit that stores and processes substrates in a multistage state, such as a substrate baking furnace, the interval between racks (rack pitch) for storing substrates is considered in consideration of the deflection and thickness of the transport fork (that is, It must be large (so that a bent transport fork can be inserted). Thereby, there existed a problem that a substrate baking furnace will enlarge.

基板焼成炉が大型化すると、熱損失が増大し、製造コストも増加する。また、単位高さあたりに処理可能な基板の枚数が少なくなるため、焼成処理能力が低下する。さらに、基板焼成炉の高さが輸送限界高さ以上となってしまうと、基板焼成炉を分割して輸送しなくてはならない。この場合、分割して輸送した基板焼成炉を密閉化するためにさらなる設計労力や製造コストが要されることになってしまう。   When the substrate baking furnace is increased in size, heat loss increases and manufacturing costs also increase. In addition, since the number of substrates that can be processed per unit height is reduced, the firing processing capacity is reduced. Furthermore, if the height of the substrate baking furnace exceeds the transport limit height, the substrate baking furnace must be divided and transported. In this case, additional design labor and manufacturing costs are required to seal the substrate firing furnace that is divided and transported.

支持すべき基板の大型化（すなわち、搬送フォークの全長増加）およびこれに伴う基板の重量増加が進む近年においては、搬送フォークの撓み発生は一層顕著なものとなってきており、この撓みに起因する上記の問題も一層深刻なものとなっている。   In recent years when the size of the substrate to be supported has increased (that is, the total length of the transport fork) and the accompanying increase in the weight of the substrate, the occurrence of warping of the transport fork has become more prominent. The above problems are becoming more serious.

この事情を受けて、撓みの発生しにくい搬送フォークを実現すべく各種の技術が考案されている。例えば、搬送フォークを、アルミニウム合金等からなる金属層と、当該金属層を上下からサンドイッチするＣＦＲＰ層とによって構成することによって、ＣＦＲＰ層から撓みの抑制効果を得るとともに、金属層によってＣＦＲＰ層の脆さや熱歪みをカバーする技術が提案されている（特許文献１参照）。   In view of this situation, various techniques have been devised to realize a transport fork that is unlikely to bend. For example, the conveyance fork is constituted by a metal layer made of an aluminum alloy or the like and a CFRP layer sandwiching the metal layer from above and below, thereby obtaining a bending suppression effect from the CFRP layer and making the CFRP layer brittle by the metal layer. A technique that covers sheath thermal distortion has been proposed (see Patent Document 1).

また、搬送フォークを、Ｓｉ金属マトリックス中にＳｉＣ強化剤が複合されたＳｉＣ−Ｓｉ複合材料を用いて形成し、さらにこれをハニカム構造体とすることによって、放熱性に優れ、軽量かつ高強度の搬送フォークを得る技術が提案されている（特許文献２参照）。   In addition, the transport fork is formed using a SiC-Si composite material in which a SiC reinforcing agent is composited in a Si metal matrix, and by making this a honeycomb structure, it has excellent heat dissipation, light weight and high strength. A technique for obtaining a transport fork has been proposed (see Patent Document 2).

また、搬送フォークを中空パイプにより構成することによって、軽量かつ高剛性の搬送フォークを得る技術が提案されている（特許文献３参照）。   Further, a technique for obtaining a lightweight and highly rigid transport fork by configuring the transport fork with a hollow pipe has been proposed (see Patent Document 3).

また、搬送フォーク内部に気体の供給機構を設け、搬送フォークの上面から気体を噴出させることによって、搬送フォークが基板の重みによって変形することを抑制する技術が提案されている（特許文献４参照）。   In addition, a technique has been proposed in which a gas supply mechanism is provided inside the transfer fork, and gas is ejected from the upper surface of the transfer fork to suppress deformation of the transfer fork due to the weight of the substrate (see Patent Document 4). .

特開平１１−３５４６０７号公報JP 11-354607 A 特開２００５−１７５１４１号公報JP 2005-175141 A 特開２００１−７９７９０号公報JP 2001-79790 A 特開平１１−１８０５５４号公報Japanese Patent Laid-Open No. 11-180554

ところで、例えば、基板焼成炉に対する基板の搬出入に供される搬送フォークのように、基板搬送時に高温下にさらされる搬送フォークＭ（図８参照）は、高温下にさらされることによってその剛性が低下してしまう。これによって、撓みの原因となる下向きの力（支持する基板Ｗの重みや、搬送フォークＭの自重）ＡＲ９１に起因する撓みが、常温下と比べてより顕著に現れる。   By the way, for example, a transport fork M (see FIG. 8) that is exposed to a high temperature when transporting a substrate, such as a transport fork that is used to carry the substrate in and out of the substrate baking furnace, is rigid when exposed to a high temperature. It will decline. As a result, the downward force (the weight of the substrate W to be supported and the weight of the transport fork M) AR91 that causes the bending appears more prominently than at normal temperature.

また、基板焼成炉から焼成処理された基板を搬出するにあたって、搬送フォークＭは焼成処理温度まで昇温した基板Ｗを支持しなければならない。このとき、搬送フォークＭの上面は昇温した基板Ｗと接触することによって熱膨張してしまう（ＡＲ９２）。これに起因して搬送フォークＭに反りが生じ、搬送フォークの撓みがさらに助長されてしまう。   Further, when carrying out the substrate subjected to the baking process from the substrate baking furnace, the transport fork M must support the substrate W whose temperature has been raised to the baking processing temperature. At this time, the upper surface of the transfer fork M is thermally expanded by coming into contact with the heated substrate W (AR92). As a result, the conveyance fork M is warped, and the bending of the conveyance fork is further promoted.

従来の技術によると、搬送フォークの撓みの抑制に関して一応の効果が得られるものの、上記のように基板搬送時に高温下にさらされる搬送フォークの撓みを抑制することができなかった。   According to the conventional technique, although a temporary effect can be obtained with respect to the suppression of the bending of the transfer fork, it is not possible to suppress the bending of the transfer fork exposed to a high temperature during the transfer of the substrate as described above.

この発明は、上記課題に鑑みてなされたもので、厚みが薄く、かつ撓みが生じにくい搬送フォーク、特に、焼成処理温度のような高温下にさらされた場合であっても撓みが生じにくい搬送フォークを備える基板搬送装置を提供することを目的としている。   The present invention has been made in view of the above-mentioned problems, and is a transport fork that is thin and difficult to bend, in particular, it is difficult to bend even when exposed to a high temperature such as a firing temperature. It aims at providing the board | substrate conveyance apparatus provided with a fork.

請求項１の発明は、基板焼成炉に対する基板の搬出入を行う基板搬送装置であって、基板を片持ち状態で支持する搬送フォークと、前記搬送フォークを駆動して前記基板焼成炉にアクセスさせる駆動部と、を備え、前記搬送フォークが、ハニカム構造体である本体部材と、前記本体部材の上面に接合され、前記本体部材よりも熱膨張率の小さい材質にて形成されている天板部材と、を備える。   The invention according to claim 1 is a substrate transfer apparatus for carrying a substrate in and out of a substrate baking furnace, wherein the transfer fork for supporting the substrate in a cantilever state, and driving the transfer fork to access the substrate baking furnace. A main body member having a honeycomb structure, and a top plate member formed of a material having a smaller coefficient of thermal expansion than the main body member. And comprising.

請求項２の発明は、請求項１に記載の基板搬送装置であって、前記本体部材が、炭素繊維強化樹脂にて形成されている。   A second aspect of the present invention is the substrate transfer apparatus according to the first aspect, wherein the main body member is formed of a carbon fiber reinforced resin.

請求項３の発明は、請求項１に記載の基板搬送装置であって、前記本体部材が、セラミックスにて形成されている。   A third aspect of the present invention is the substrate transfer apparatus according to the first aspect, wherein the main body member is made of ceramics.

請求項４の発明は、請求項１から３のいずれかに記載の基板搬送装置であって、前記天板部材が、グラシックカーボンにて形成されている。   A fourth aspect of the present invention is the substrate transfer apparatus according to any one of the first to third aspects, wherein the top plate member is formed of glassic carbon.

請求項５の発明は、請求項１から３のいずれかに記載の基板搬送装置であって、前記天板部材が、ダイヤモンドライクカーボンにて形成されている。   A fifth aspect of the present invention is the substrate transfer apparatus according to any one of the first to third aspects, wherein the top plate member is formed of diamond-like carbon.

請求項６の発明は、請求項１から３のいずれかに記載の基板搬送装置であって、前記天板部材が、セラミックスにて形成されている。   A sixth aspect of the present invention is the substrate transport apparatus according to any one of the first to third aspects, wherein the top plate member is formed of ceramics.

請求項７の発明は、請求項１から３のいずれかに記載の基板搬送装置であって、前記天板部材が、樹脂にて形成されている。   A seventh aspect of the invention is the substrate transfer apparatus according to any one of the first to third aspects, wherein the top plate member is formed of a resin.

請求項８の発明は、請求項１から７のいずれかに記載の基板搬送装置であって、前記ハニカム構造体が六角形を並べる形で作られた構造体である。   The invention according to an eighth aspect is the substrate transfer apparatus according to any one of the first to seventh aspects, wherein the honeycomb structure is formed in a form in which hexagons are arranged.

請求項９の発明は、請求項１から７のいずれかに記載の基板搬送装置であって、前記ハニカム構造体が四角形を並べる形で作られた構造体である。   A ninth aspect of the present invention is the substrate transfer apparatus according to any one of the first to seventh aspects, wherein the honeycomb structured body is formed in a form in which squares are arranged.

請求項１〜９に記載の発明では、搬送フォークの本体部材をハニカム構造体とすることによって、厚みを増さずとも基板を支持するのに十分な強度が得られ、かつ撓みも生じにくい搬送フォークを得ることができる。またさらに、本体部材の上面に本体部材よりも熱膨張率の小さい材質にて形成されている天板部材を接合することによって、高温下にさらされた場合であっても撓みが生じにくい搬送フォークを得ることができる。   In the invention according to any one of claims 1 to 9, by making the main body member of the transport fork into a honeycomb structure, it is possible to obtain a sufficient strength to support the substrate without increasing the thickness, and to prevent bending. You can get a fork. In addition, by joining a top plate member made of a material having a smaller thermal expansion coefficient than that of the main body member to the upper surface of the main body member, the conveyance fork is less likely to bend even when exposed to high temperatures. Can be obtained.

特に、請求項２に記載の発明では、本体部材が炭素繊維強化樹脂にて形成されているので、衝撃に強く、高耐熱性で軽量かつ高強度な搬送フォークを得ることができる。   In particular, in the invention according to claim 2, since the main body member is made of carbon fiber reinforced resin, a transport fork which is strong against impact, high heat resistance, light weight and high strength can be obtained.

図面を参照して、この発明の実施の形態に係る基板搬送装置１について説明する。基板搬送装置１は、基板焼成炉２に対する基板の搬出入を行う装置である。そこで、基板搬送装置１について具体的に説明する前に、基板焼成炉２の構成について説明する。   A substrate transfer apparatus 1 according to an embodiment of the present invention will be described with reference to the drawings. The substrate transfer device 1 is a device that carries a substrate in and out of the substrate baking furnace 2. Therefore, before specifically describing the substrate transfer apparatus 1, the configuration of the substrate baking furnace 2 will be described.

〈１．基板焼成炉〉
基板焼成炉２の構成について図１〜図３を参照しながら説明する。図１は、基板焼成炉２の概略斜視図である。図２は、図１に示す基板焼成炉２の横断面図（Ｋ１−Ｋ１断面図）である。また、図３は、図１に示す基板焼成炉２の縦断面図（Ｋ２−Ｋ２断面図）である。 <1. Substrate firing furnace>
The configuration of the substrate baking furnace 2 will be described with reference to FIGS. FIG. 1 is a schematic perspective view of the substrate baking furnace 2. 2 is a cross-sectional view (K1-K1 cross-sectional view) of the substrate firing furnace 2 shown in FIG. 3 is a longitudinal sectional view (K2-K2 sectional view) of the substrate baking furnace 2 shown in FIG.

基板焼成炉２は、開口部を有する箱形の炉体１０と、炉体１０の開口部を塞ぐルーバタイプのシャッター３０とを備えている。   The substrate baking furnace 2 includes a box-shaped furnace body 10 having an opening and a louver-type shutter 30 that closes the opening of the furnace body 10.

炉体１０は、基板焼成炉２の本体を構成する筐体であり、断熱材を用いて成型されている。炉体１０はその内部に基板格納部１１、ヒータ１２、ファン１３、耐熱ＨＥＰＡフィルタ１４を収納している。   The furnace body 10 is a housing that constitutes the main body of the substrate firing furnace 2 and is molded using a heat insulating material. The furnace body 10 houses therein a substrate storage part 11, a heater 12, a fan 13, and a heat-resistant HEPA filter 14.

炉体１０の内側面の一方（内側面Ｓ１）には、基板格納部１１の内部空間Ｖ（以下において「焼成空間Ｖ」という）に熱を供給するヒータ１２が備えられている。また、他方の内側面（内側面Ｓ２）には、ファン１３が備えられている。また、ファン１３と基板格納部１１との間には耐熱ＨＥＰＡフィルタ１４が介挿されている。すなわち、ファン１３が矢印ＡＲ１〜ＡＲ４のように炉体１０内の気流を循環させることによって、焼成空間Ｖ内を温度ムラなく均質に所定の焼成処理温度に保つことができる。なお、ファン１３とヒータ１２の位置は逆でもよい。   One of the inner side surfaces (inner side surface S1) of the furnace body 10 is provided with a heater 12 that supplies heat to the internal space V (hereinafter referred to as “firing space V”) of the substrate storage unit 11. Further, a fan 13 is provided on the other inner surface (inner surface S2). Further, a heat resistant HEPA filter 14 is interposed between the fan 13 and the substrate storage unit 11. That is, the fan 13 circulates the airflow in the furnace body 10 as indicated by arrows AR1 to AR4, whereby the firing space V can be uniformly maintained at a predetermined firing temperature without temperature unevenness. The positions of the fan 13 and the heater 12 may be reversed.

基板格納部１１は、複数の基板を多段状態に格納するための格納部であり、本体を構成する壁面１１０のうち、特に側壁面１１０ａ，１１０ｂはパンチングメタルによって成型されている。   The substrate storage unit 11 is a storage unit for storing a plurality of substrates in a multistage state, and among the wall surfaces 110 constituting the main body, particularly the side wall surfaces 110a and 110b are formed of punching metal.

基板格納部１１を構成する筐体の内背面Ｔ１には、複数の炉内支持部材１１１の基端部がそれぞれ固定されている。炉内支持部材１１１は、基板格納部１１内において、基板Ｗを片持ち状態で支持する基板支持部材である。炉内支持部材１１１の長尺方向の長さは、図２に示すように、基板格納部１１に格納された基板Ｗの奥行き方向の長さと同程度の長さを有している。   The base end portions of the plurality of in-furnace support members 111 are respectively fixed to the inner back surface T1 of the housing constituting the substrate storage unit 11. The in-furnace support member 111 is a substrate support member that supports the substrate W in a cantilever state in the substrate storage unit 11. As shown in FIG. 2, the length of the in-furnace support member 111 in the longitudinal direction is approximately the same as the length of the substrate W stored in the substrate storage unit 11 in the depth direction.

基板格納部１１を構成する筐体の内側面Ｔ２，Ｔ３はパンチングプレートで構成され、複数の補助支持部材１１２の基端部がそれぞれ固定されている。補助支持部材１１２は、基板格納部１１内において、炉内支持部材１１１に支持された基板Ｗを、補助的に支持するための支持部材である。補助支持部材１１２の長尺方向の長さは、図２に示すように、後述する基板搬送装置１の搬送フォーク２４と干渉しない程度の長さとする。   Inner side surfaces T2 and T3 of the housing constituting the substrate storage unit 11 are formed of punching plates, and the base end portions of the plurality of auxiliary support members 112 are fixed to each other. The auxiliary support member 112 is a support member for supporting the substrate W supported by the in-furnace support member 111 in the substrate storage unit 11. As shown in FIG. 2, the length of the auxiliary support member 112 in the longitudinal direction is set to a length that does not interfere with a transport fork 24 of the substrate transport apparatus 1 described later.

基板格納部１１の内背面Ｔ１の同一水平位置には、複数の炉内支持部材１１１（図２においては３個）の基端部が固定されている。また、基板格納部１１の内側面Ｔ２，Ｔ３のそれぞれには、同一水平位置に、複数の補助支持部材１１２（図２においては５個）の基端部がそれぞれ固定されている。互いに同一水平位置にその基端部が固定されたこれら支持部材の集合は、同一の基板Ｗを支持するために供される。すなわち、基板格納部１１内に格納される複数の基板Ｗのそれぞれは、図３に示されるように、同一水平位置に固定された支持部材の集合によって水平に支持される。   Base end portions of a plurality of in-furnace support members 111 (three in FIG. 2) are fixed at the same horizontal position on the inner back surface T1 of the substrate storage portion 11. Further, the base end portions of a plurality of auxiliary support members 112 (five in FIG. 2) are fixed to the inner side surfaces T2 and T3 of the substrate storage portion 11 at the same horizontal position. A group of these support members whose base end portions are fixed at the same horizontal position is provided to support the same substrate W. That is, each of the plurality of substrates W stored in the substrate storage unit 11 is horizontally supported by a set of support members fixed at the same horizontal position, as shown in FIG.

さらに、図３に示されるように、基板格納部１１の内背面Ｔ１および内側面Ｔ２，Ｔ３には、鉛直方向について、これら同一水平位置に固定された支持部材の集合が所定の配置間隔（ラックピッチ）ｄをおいて所定数（図３においては簡略化して示しているが、実際は、例えば４０段程度）設けられている。これによって、基板格納部１１は、それぞれ水平に支持された基板Ｗを多段状態で複数格納することができる。   Further, as shown in FIG. 3, a set of support members fixed at the same horizontal position in the vertical direction on the inner back surface T <b> 1 and the inner side surfaces T <b> 2, T <b> 3 of the substrate storage unit 11 is arranged at a predetermined arrangement interval (rack A predetermined number (pitch) d is provided (in FIG. 3, which is shown in a simplified manner, actually, for example, about 40 steps). Thereby, the substrate storage unit 11 can store a plurality of horizontally supported substrates W in a multistage state.

再び図１を参照する。シャッター３０は、全体位置規制部材３１と、全体位置規制部材３１上に鉛直方向に積層載置された複数個のルーバ３２ａ，３２ｂ，３２ｃとを備える。   Refer to FIG. 1 again. The shutter 30 includes an overall position restricting member 31 and a plurality of louvers 32a, 32b, and 32c stacked on the overall position restricting member 31 in the vertical direction.

全体位置規制部材３１には昇降機構（図示省略）が取り付けられており、上下方向（矢印ＡＲ５）に昇降可能である。全体位置規制部材３１に取り付けられた昇降機構を制御することによって、全体位置規制部材３１およびそれに積層載置された複数のルーバ３２ａ，３２ｂ，３２ｃを一体に昇降させることができる。   A lifting mechanism (not shown) is attached to the overall position regulating member 31 and can be moved up and down (arrow AR5). By controlling the lifting mechanism attached to the overall position restricting member 31, the overall position restricting member 31 and the plurality of louvers 32a, 32b, and 32c stacked thereon can be raised and lowered integrally.

さらに、複数のルーバ３２ａ，３２ｂ，３２ｃのそれぞれにも昇降機構（図示省略）が取り付けられており、各ルーバ３２ａ，３２ｂ，３２ｃは上下方向（矢印ＡＲ６，７，８）に昇降可能である。例えば、ルーバ３２ｂに取り付けられた昇降機構を制御することによって、ルーバ３２ｂおよびそれに積層載置されたルーバ３２ａを一体に昇降させることができる。すなわち、ルーバ３２ｂを上方に移動させることによって、ルーバ３２ｃとルーバ３２ｂの間に開口部Ｑ（図３）を形成することができる。   Further, an elevating mechanism (not shown) is also attached to each of the plurality of louvers 32a, 32b, 32c, and each louver 32a, 32b, 32c can be raised and lowered in the vertical direction (arrows AR6, 7, 8). For example, by controlling an elevating mechanism attached to the louver 32b, the louver 32b and the louver 32a stacked thereon can be raised and lowered integrally. That is, the opening Q (FIG. 3) can be formed between the louver 32c and the louver 32b by moving the louver 32b upward.

つまり、ルーバ３２ａ，３２ｂ，３２ｃおよび全体位置規制部材３１のそれぞれを昇降制御することによって、基板格納部１１の多段構造のうちの任意の段に対向した開口部を形成することができる。これによって、図２および図３に示すように、後述する基板搬送装置１に備えられた搬送フォーク２４ａが、基板格納部１１の多段構造のうちの任意の段にアクセス（より具体的には、任意の段に載置された基板Ｗを取り出したり、任意の段に基板Ｗを載置すること）が可能となる。また、ルーバ３２ａ，３２ｂ，３２ｃの移動距離を適切に設定することによって、形成される開口部の鉛直方向についての長さを適正値（より具体的には、搬送フォーク２４ａが基板Ｗを載置した状態で挿通可能な最小の値）とすることができる。   In other words, by controlling the louvers 32 a, 32 b, 32 c and the overall position regulating member 31 to move up and down, it is possible to form an opening facing an arbitrary stage of the multistage structure of the substrate storage unit 11. Thereby, as shown in FIG. 2 and FIG. 3, a transfer fork 24 a provided in the substrate transfer apparatus 1 described later accesses an arbitrary stage of the multistage structure of the substrate storage unit 11 (more specifically, It is possible to take out the substrate W placed on an arbitrary stage or place the substrate W on an arbitrary stage). Further, by appropriately setting the moving distance of the louvers 32a, 32b, and 32c, the length of the formed opening in the vertical direction is set to an appropriate value (more specifically, the transport fork 24a places the substrate W thereon. The minimum value that can be inserted in this state).

〈２．基板搬送装置〉
〈２−１．基板搬送装置の全体構成〉
次に、この発明の実施の形態に係る基板搬送装置１について図４を参照しながら説明する。図４は、この発明に係る基板搬送装置１の構成を示す概略斜視図である。基板搬送装置１は、上述した基板焼成炉２に対する基板の搬出入を行う。 <2. Substrate transfer device>
<2-1. Overall configuration of substrate transfer device>
Next, the substrate transfer apparatus 1 according to the embodiment of the present invention will be described with reference to FIG. FIG. 4 is a schematic perspective view showing the configuration of the substrate transfer apparatus 1 according to the present invention. The substrate transfer apparatus 1 carries the substrate in and out of the substrate baking furnace 2 described above.

基板搬送装置１は、円筒状の装置本体２１と、装置本体２１に取り付けられたコラム２２と、コラム２２の上面に取り付けられた第１の搬送アーム２３ａおよび第２の搬送アーム２３ｂと、各搬送アーム２３ａ，２３ｂに固定された複数の搬送フォーク２４ａ，２４ｂと、を備えている。   The substrate transfer apparatus 1 includes a cylindrical apparatus main body 21, a column 22 attached to the apparatus main body 21, a first transfer arm 23a and a second transfer arm 23b attached to the upper surface of the column 22, and each transfer. And a plurality of transfer forks 24a and 24b fixed to the arms 23a and 23b.

装置本体２１は基板焼成炉２を含む各種の処理部によって構成される基板処理装置の底面に配置される。装置本体２１には円筒状の外形を有するコラム２２が昇降自在かつ回動自在に取り付けられている。   The apparatus main body 21 is disposed on the bottom surface of the substrate processing apparatus configured by various processing units including the substrate baking furnace 2. A column 22 having a cylindrical outer shape is attached to the apparatus main body 21 so as to be movable up and down and rotatable.

コラム２２は、装置本体２１内に備えられた昇降機構（図示省略）によって上下方向（矢印ＡＲ２１）に昇降可能である。また、装置本体２１内に備えられた回動機構（図示省略）によってコラム２２の中心軸Ａ１のまわりに回動可能である。   The column 22 can be moved up and down (arrow AR21) by an elevating mechanism (not shown) provided in the apparatus main body 21. Further, it can be rotated around the central axis A <b> 1 of the column 22 by a rotation mechanism (not shown) provided in the apparatus main body 21.

第１の搬送アーム２３ａは、ベースアーム２３１ａと、ベースアーム２３１ａの先端に取り付けられた中間アーム２３２ａと、中間アーム２３２ａの先端に取り付けられた搬送フォーク保持アーム２３３ａと、を備えている。また、ベースアーム２３１ａ、中間アーム２３２ａ、搬送フォーク保持アーム２３３ａのそれぞれは回動機構（図示省略）を備え、ベースアーム２３１ａは中心軸Ａ２ａのまわりに、中間アーム２３２ａは中心軸Ａ３ａのまわりに、搬送フォーク保持アーム２３３ａは中心軸Ａ４ａのまわりに、それぞれ回動可能である。   The first transfer arm 23a includes a base arm 231a, an intermediate arm 232a attached to the tip of the base arm 231a, and a transfer fork holding arm 233a attached to the tip of the intermediate arm 232a. Each of the base arm 231a, the intermediate arm 232a, and the transfer fork holding arm 233a includes a rotation mechanism (not shown). The base arm 231a is around the central axis A2a, and the intermediate arm 232a is around the central axis A3a. The transport fork holding arms 233a can rotate around the central axis A4a.

搬送フォーク保持アーム２３３ａには、複数の搬送フォーク２４ａの基端部が固定されている。搬送フォーク２４ａは、基板を片持ち状態で支持する基板支持部材である。基端部が固定された状態で、支持面２４１ａ上に基板が載置されることによって、片持ち状態で基板を水平に支持することができる。なお、この支持面２４１ａは、後述する天板部材Ｈの上面によって構成される。   The base end portions of the plurality of transport forks 24a are fixed to the transport fork holding arm 233a. The transport fork 24a is a substrate support member that supports the substrate in a cantilever state. By placing the substrate on the support surface 241a with the base end portion fixed, the substrate can be supported horizontally in a cantilever state. In addition, this support surface 241a is comprised by the upper surface of the top-plate member H mentioned later.

第２の搬送アーム２３ｂは、第１の搬送アーム２３ａとほぼ同様の構成を有している。なお、第２の搬送アーム２３ｂの備える搬送フォーク保持アーム２３３ｂには、第１の搬送アーム２３ａの備える搬送フォーク支持アーム２３３ａと同様に、複数の搬送フォーク２４ｂの基端部が固定されている。搬送フォーク２４ｂは、搬送フォーク２４ａと同様、基板を片持ち状態で支持する基板支持部材である。   The second transfer arm 23b has substantially the same configuration as the first transfer arm 23a. In addition, the base end part of the some conveyance fork 24b is being fixed to the conveyance fork holding arm 233b with which the 2nd conveyance arm 23b is equipped similarly to the conveyance fork support arm 233a with which the 1st conveyance arm 23a is equipped. The transport fork 24b is a substrate support member that supports the substrate in a cantilever state, like the transport fork 24a.

ただし、搬送フォーク２４ｂと搬送フォーク２４ａとは、互いの干渉を防ぐため、上下にずれて互いに平行な位置関係にある。すなわち、第２の搬送アーム２３ｂの備える搬送フォーク保持アーム２３３ｂは、中間アーム２３２ｂの基端部側に延びる下アーム部３３１ｂと、下アーム部３３１ｂの先端から立ち上がる立ち上がり部３３２ｂと、立ち上がり部３３２ｂの上端に固定され、中間アーム２３２ｂの先端に向けて折り返す上アーム部３３３ｂと、を有しており、複数の搬送フォーク２４ｂの基端部は上アーム部３３３ｂに固定されている。   However, the transport fork 24b and the transport fork 24a are displaced in the vertical direction and are in parallel with each other in order to prevent mutual interference. That is, the transport fork holding arm 233b included in the second transport arm 23b includes a lower arm part 331b extending toward the base end side of the intermediate arm 232b, a rising part 332b rising from the tip of the lower arm part 331b, and a rising part 332b. An upper arm portion 333b fixed to the upper end and turned back toward the distal end of the intermediate arm 232b. Base end portions of the plurality of transport forks 24b are fixed to the upper arm portion 333b.

第１および第２の搬送アーム２３ａ，２３ｂは、いわゆるスカラー方式のロボットを構成しており、ベースアーム２３１ａ，２３１ｂ、中間アーム２３２ａ，２３２ｂ、搬送フォーク保持アーム２３３ａ，２３３ｂが回動されることによって、搬送フォーク２４ａ，２４ｂの姿勢を変えることなくコラム２２の中心軸Ａ１に対して直線的に近接／離反変位させることができる（矢印ＡＲ２２（図２、図３）参照）。また、同時に、コラム２２が昇降されることによって、搬送フォーク２４ａ，２４ｂを、任意の水平位置におくことができる。すなわち、基板格納部１１の多段構造のうちの任意の段に載置された基板Ｗを取り出したり、任意の段に基板Ｗを載置することが可能となる（図３参照）。   The first and second transfer arms 23a and 23b constitute a so-called scalar robot, and the base arms 231a and 231b, the intermediate arms 232a and 232b, and the transfer fork holding arms 233a and 233b are rotated. Further, it is possible to linearly approach / separate displacement from the central axis A1 of the column 22 without changing the posture of the transport forks 24a and 24b (see arrow AR22 (FIGS. 2 and 3)). At the same time, the transport forks 24a and 24b can be placed in an arbitrary horizontal position by moving the column 22 up and down. That is, it is possible to take out the substrate W placed on an arbitrary stage in the multistage structure of the substrate storage unit 11 or place the substrate W on an arbitrary stage (see FIG. 3).

〈２−２．搬送フォークの構成〉
搬送フォーク２４ａ，２４ｂ（以下において、搬送フォーク２４ａと搬送フォーク２４ｂとを特に区別しない場合には、単に搬送フォーク２４と示す。）の構成について図５を参照しながら説明する。図５は、搬送フォーク２４の一部切り欠き斜視図である。 <2-2. Conveyor fork configuration>
The configuration of the transport forks 24a and 24b (hereinafter, simply referred to as the transport fork 24 when the transport fork 24a and the transport fork 24b are not particularly distinguished) will be described with reference to FIG. FIG. 5 is a partially cutaway perspective view of the transport fork 24.

搬送フォーク２４は、第１の材料にて形成された本体部材Ｂと、第２の材料にて形成された天板部材Ｈとの２層構造を有している。   The transport fork 24 has a two-layer structure of a main body member B formed of a first material and a top plate member H formed of a second material.

〈本体部材Ｂの構造〉
本体部材Ｂは、搬送フォーク２４の本体部を構成する部材であり、六角形を並べる形で作られたハニカム構造体により構成されている。なお、この実施の形態に係る搬送フォーク２４においては、本体部材Ｂの下面は開放される。また、上面には後述する天板部材Ｈが接合される。 <Structure of body member B>
The main body member B is a member that constitutes a main body portion of the transport fork 24, and is constituted by a honeycomb structure formed in a hexagonal shape. In the transport fork 24 according to this embodiment, the lower surface of the main body member B is opened. Moreover, the top plate member H mentioned later is joined to the upper surface.

ハニカム構造は、中実構造に比べて軽い。したがって、本体部材Ｂをハニカム構造とすることによって、自重に起因して生じる搬送フォーク２４の撓みが低減される。また、ハニカム構造は、中空構造に比べて高強度である。したがって、本体部材Ｂをハニカム構造とすることによって、厚みを増さずとも基板を支持するのに十分な強度が得られる。また、基板Ｗを支持する際にも、撓みが生じくい。   The honeycomb structure is lighter than the solid structure. Therefore, the main body member B having a honeycomb structure reduces the bending of the transport fork 24 caused by its own weight. In addition, the honeycomb structure has higher strength than the hollow structure. Therefore, when the main body member B has a honeycomb structure, sufficient strength to support the substrate can be obtained without increasing the thickness. Further, when the substrate W is supported, it is difficult for bending to occur.

〈本体部材Ｂの材料〉
本体部材Ｂは、ＣＦＲＰ（炭素繊維強化樹脂）、もしくは、セラミックスを材料として形成される。 <Material of body member B>
The main body member B is made of CFRP (carbon fiber reinforced resin) or ceramics.

ＣＦＲＰは、衝撃に強く、高耐熱性で軽量かつ高強度な材料であるので、ＣＦＲＰを本体部材Ｂの材料として採用することによって、衝撃および熱に強く、軽量かつ高強度の本体部材Ｂが得られる。   Since CFRP is a material that is resistant to impact, high heat resistance, light weight, and high strength, adopting CFRP as a material for the body member B provides a light weight and high strength body member B that is resistant to impact and heat. It is done.

セラミックスを材料として採用する場合は、特に、耐衝撃性の高いセラミックス（例えば、窒化ケイ素、あるいは積層型セラミックス等）を採用することが望ましい。耐衝撃性の高いセラミックスを本体部材Ｂの材料として採用することによって、割れにも強い本体部材Ｂが得られる。   When using ceramics as a material, it is particularly desirable to use ceramics with high impact resistance (for example, silicon nitride or laminated ceramics). By adopting ceramics having high impact resistance as the material of the main body member B, the main body member B which is resistant to cracking can be obtained.

〈天板部材Ｈの構造〉
天板部材Ｈは、その上面が支持面２４１を構成する板状部材であり、その下面が本体部材Ｂの上面と接合される。より具体的には、接着剤により、もしくは一体成型によって本体部材Ｂの上面と接合される。 <Structure of top plate member H>
The top plate member H is a plate-like member whose upper surface constitutes the support surface 241, and its lower surface is joined to the upper surface of the main body member B. More specifically, it is joined to the upper surface of the main body member B by an adhesive or by integral molding.

〈天板部材Ｈの材料〉
天板部材Ｈは、本体部材Ｂを形成する材質よりも熱膨張率の小さい材質を材料として形成される。 <Material of top plate member H>
The top plate member H is formed using a material having a smaller coefficient of thermal expansion than the material forming the main body member B.

より具体的には、天板部材Ｈは、本体部材Ｂを形成する材質よりも熱膨張率の小さいセラミックスを材料として形成される。この場合、特に、低熱膨張セラミックス（熱膨張係数が、２０×１０-7℃-1より小さいセラミックス）を材料として採用することが望ましい。 More specifically, the top plate member H is made of a ceramic material having a smaller coefficient of thermal expansion than the material forming the main body member B. In this case, it is particularly desirable to employ a low thermal expansion ceramic (a ceramic having a thermal expansion coefficient smaller than 20 × 10 −7 ° C. −1 ) as a material.

また、天板部材Ｈは、本体部材Ｂを形成する材質よりも熱膨張率の小さい樹脂を材料として形成してもよい。この場合、特に、低熱膨張樹脂（熱膨張係数が、２０×１０-7℃-1より小さい樹脂）を材料として採用することが望ましい。 Further, the top plate member H may be made of a resin having a smaller coefficient of thermal expansion than the material forming the main body member B. In this case, it is particularly desirable to employ a low thermal expansion resin (a resin having a thermal expansion coefficient smaller than 20 × 10 −7 ° C. −1 ) as a material.

また、本体部材Ｂを形成する材質の熱膨張率がグラシックカーボン（ガラス状炭素）よりも大きい場合、天板部材Ｈは、グラシックカーボンを材料として形成してもよい。グラシックカーボンは、外観が黒色、かつガラス状で、破面も光沢のある貝殻状を示す硬質で非結晶の炭素であり、非常に均質ならびに緻密な構造を有する。このため、グラシックカーボンは、一般的な炭素材料の特徴である導電性、化学的安定性、耐熱性、高純度等の性質に加え、材料表面が粉化して脱落することがないという優れた特徴を有するため、直接に溶接する部材としても使用できる。さらに、グラシックカーボンは、塩酸やフッ酸などの酸に対しても優れた耐食性を有している。   Further, when the coefficient of thermal expansion of the material forming the main body member B is larger than that of glassic carbon (glassy carbon), the top plate member H may be formed of glassic carbon as a material. Glassic carbon is a hard, non-crystalline carbon that has a black appearance, glassy appearance, and a glossy shell shape, and has a very homogeneous and dense structure. For this reason, glassic carbon is excellent in that the surface of the material is not pulverized and dropped in addition to properties such as conductivity, chemical stability, heat resistance, and high purity, which are characteristics of general carbon materials. Since it has characteristics, it can also be used as a member to be welded directly. Further, glassic carbon has excellent corrosion resistance against acids such as hydrochloric acid and hydrofluoric acid.

また、本体部材Ｂを形成する材質の熱膨張率がダイヤモンドライクカーボン（ダイヤモンド状炭素）よりも大きい場合、天板部材Ｈは、ダイヤモンドライクカーボンを材料として形成してもよい。すなわち、本体部材Ｂの上面にダイヤモンドライクカーボンの皮膜を形成する構成としてもよい。ダイヤモンドライクカーボンは、ダイヤモンドに類似した炭素（カーボン）薄膜材料である。ダイヤモンドライクカーボンは、ダイヤモンド結合とグラファイト結合とが混在した非晶質（アモルファス）構造を有する。このため、ダイヤモンドライクカーボンは、硬質性、耐摩擦性、耐摩耗性、耐薬品性、電気絶縁性、赤外線透過性等の優れた特徴を有している。   Further, when the coefficient of thermal expansion of the material forming the main body member B is larger than that of diamond-like carbon (diamond-like carbon), the top plate member H may be formed using diamond-like carbon as a material. In other words, a diamond-like carbon film may be formed on the upper surface of the main body member B. Diamond-like carbon is a carbon (carbon) thin film material similar to diamond. Diamond-like carbon has an amorphous structure in which diamond bonds and graphite bonds are mixed. For this reason, diamond-like carbon has excellent characteristics such as hardness, friction resistance, wear resistance, chemical resistance, electrical insulation, and infrared transparency.

また、本体部材Ｂを正の熱膨張率を持つＣＦＲＰ（ＰＡＮ系）、天板部材Ｈを負の熱膨張率を持つＣＦＲＰ（ピッチ系）としてもよい。   The main body member B may be CFRP (PAN system) having a positive thermal expansion coefficient, and the top plate member H may be CFRP (pitch system) having a negative thermal expansion coefficient.

天板部材Ｈは、搬送フォーク２４が高温下におかれた際に生じる撓みを防止すべく、本体部材Ｂの上面に接合される。すなわち、搬送フォーク２４が高温下にさらされた場合（例えば、搬送フォーク２４が焼成処理温度まで昇温された基板焼成炉２の焼成空間に挿入された場合）に、搬送フォーク２４には、図６に示すように、本体部材Ｂと天板部材Ｈとの間の熱膨張率の差に起因して、相対的に熱膨張率が小さな部材である天板部材Ｈの側に曲がろうとする上向きの力Ｆ１が生じる（所謂、バイメタル効果）。搬送フォーク２４の撓みの原因となる下向きの力（すなわち、支持する基板Ｗの重みや自重に起因する下向きの力）Ｆ２が、この上向きの力Ｆ１で相殺されることによって、搬送フォーク２４の撓みが抑制される。このように、本体部材Ｂの上面に天板部材Ｈが接合されることによって、搬送フォーク２４が焼成処理温度のような高温下にさらされた場合に搬送フォーク２４に生じる撓みが抑制される。   The top plate member H is joined to the upper surface of the main body member B in order to prevent bending that occurs when the transport fork 24 is placed at a high temperature. That is, when the transport fork 24 is exposed to a high temperature (for example, when the transport fork 24 is inserted into the firing space of the substrate firing furnace 2 heated to the firing temperature), the transport fork 24 includes As shown in FIG. 6, due to the difference in thermal expansion coefficient between the main body member B and the top plate member H, it tends to bend toward the top plate member H which is a member having a relatively small thermal expansion coefficient. An upward force F1 is generated (a so-called bimetal effect). The downward force (that is, the downward force due to the weight and weight of the substrate W to be supported) F2 that causes the bending of the transport fork 24 is offset by the upward force F1, thereby bending the transport fork 24. Is suppressed. In this way, the top plate member H is joined to the upper surface of the main body member B, so that the bending that occurs in the transport fork 24 when the transport fork 24 is exposed to a high temperature such as a firing temperature is suppressed.

また、熱膨張率が本体部材Ｂに比べて相対的に小さな材質が天板部材Ｈを形成する材料として選択されるため、搬送フォーク２４が焼成処理後の昇温した基板を支持面２４１上に支持した場合にも、支持面２４１が熱膨張しにくい。したがって、昇温した基板Ｗを支持した場合であっても、搬送フォーク２４の撓みが増長されにくい。   In addition, since a material whose thermal expansion coefficient is relatively smaller than that of the main body member B is selected as the material for forming the top plate member H, the substrate whose temperature has been raised by the transport fork 24 after the baking treatment is placed on the support surface 241. Even when supported, the support surface 241 is unlikely to thermally expand. Therefore, even when the heated substrate W is supported, the bending of the transport fork 24 is difficult to increase.

また、図５の例においては、ハニカムは六角形としたが、三角形や四角形などの多角形等の形状でもよい。すなわち、図５の例においては、ハニカム構造体は、六角形を並べる形で作られた構造体であるとしたが、三角形や四角形などの多角形等の形状を並べる形で作ってもよい。特に、ハニカム構造体を四角形を並べる形で作ると、共振周波数が増し、撓み量が少なくなるので好ましい。   In the example of FIG. 5, the honeycomb has a hexagonal shape, but may have a polygonal shape such as a triangle or a quadrangle. That is, in the example of FIG. 5, the honeycomb structure is a structure formed by arranging hexagons, but it may be formed by arranging shapes such as polygons such as triangles and quadrangles. In particular, it is preferable to make the honeycomb structure in a quadrangular shape because the resonance frequency increases and the amount of bending decreases.

〈３．基板焼成処理〉
次に、基板搬送装置１が基板焼成炉２に対する基板の搬出入を行うことによって実行される基板焼成処理について説明する。 <3. Substrate firing process>
Next, a substrate baking process that is executed when the substrate transfer apparatus 1 carries the substrate in and out of the substrate baking furnace 2 will be described.

基板焼成処理を実行するにあたっては、基板焼成炉２は、予めヒータ１２によって焼成空間Ｖに熱の供給を開始し、焼成空間Ｖを焼成処理温度（例えば３００℃）まで昇温する。   In executing the substrate baking process, the substrate baking furnace 2 starts supplying heat to the baking space V in advance by the heater 12 and raises the temperature of the baking space V to a baking processing temperature (for example, 300 ° C.).

焼成空間Ｖが焼成処理温度まで昇温されると、基板の焼成処理を開始する。すなわち、基板搬送装置１が、搬送フォーク２４ａ，２４ｂを駆動制御して、基板焼成炉２に対する基板Ｗの搬出入を開始する。より具体的には、搬送フォーク２４ａ（もしくは、搬送フォーク２４ｂ）に、未処理基板を支持させて、基板焼成炉２内の所定の炉内支持部材１１１上に載置させる。また、これと同時に、搬送フォーク２４ｂ（もしくは、搬送フォーク２４ａ）に、所定の炉内支持部材１１１上に載置された焼成処理済みの基板（すなわち、基板焼成炉２内で所定時間焼成された基板）を支持させて、基板焼成炉２内より取り出させる。   When the firing space V is heated to the firing processing temperature, the substrate firing process is started. That is, the substrate transfer apparatus 1 drives and controls the transfer forks 24 a and 24 b to start loading and unloading the substrate W with respect to the substrate baking furnace 2. More specifically, the unprocessed substrate is supported on the transport fork 24 a (or the transport fork 24 b) and placed on a predetermined in-furnace support member 111 in the substrate baking furnace 2. At the same time, the substrate that has been baked and placed on the predetermined support member 111 in the transfer fork 24b (or the transfer fork 24a) (that is, baked for a predetermined time in the substrate baking furnace 2). The substrate) is supported and taken out from the substrate baking furnace 2.

ここで搬送フォーク２４ａ，２４ｂは、焼成処理温度に保たれた焼成空間Ｖに挿入されることによって、また、焼成処理後の昇温した基板を支持面２４１上に支持することによって、高温下にさらされることになるが、上述の通り、搬送フォーク２４ａ，２４ｂは高温下にさらされても撓みにくい。   Here, the transfer forks 24a and 24b are inserted into the baking space V maintained at the baking processing temperature, and the heated substrate after the baking processing is supported on the support surface 241 so as to be kept at a high temperature. Although it will be exposed, as above-mentioned, the conveyance forks 24a and 24b are hard to bend even if exposed to high temperature.

〈４．効果〉
上記の実施の形態に係る搬送フォーク２４においては、本体部材Ｂをハニカム構造とすることによって、搬送フォーク２４を軽量化することができる。搬送フォーク２４が軽量化されると、自重に起因して生じる搬送フォーク２４の撓みが低減される。また、基板搬送装置１が搬送すべき重量（すなわち、搬送フォーク２４と被搬送基板との総重量）が小さくなるので、基板搬送装置１の構造強度や駆動力を軽減することができる。 <4. effect>
In the transport fork 24 according to the above-described embodiment, the transport fork 24 can be reduced in weight by making the main body member B have a honeycomb structure. When the transport fork 24 is reduced in weight, bending of the transport fork 24 caused by its own weight is reduced. Further, since the weight to be transported by the substrate transport apparatus 1 (that is, the total weight of the transport fork 24 and the transported substrate) is reduced, the structural strength and driving force of the substrate transport apparatus 1 can be reduced.

また、本体部材Ｂをハニカム構造とすることによって、厚みを増さずとも基板を支持するのに十分な強度が得られ、かつ撓みも生じにくい搬送フォーク２４を得ることができる。   In addition, by forming the main body member B to have a honeycomb structure, it is possible to obtain the transport fork 24 that has sufficient strength to support the substrate without increasing the thickness and is less likely to be bent.

また、上記の実施の形態に係る搬送フォーク２４においては、本体部材Ｂの上面に本体部材Ｂよりも熱膨張率が小さな天板部材Ｈを接合することによって、焼成処理温度のような高温下にさらされた場合や搬送フォーク２４が焼成処理後の昇温した基板を支持面２４１上に支持した場合であっても、撓みが生じにくい搬送フォーク２４を得ることができる。   Further, in the transport fork 24 according to the above-described embodiment, the top plate member H having a smaller coefficient of thermal expansion than the main body member B is joined to the upper surface of the main body member B, so that the temperature of the baking fork 24 is high. Even when exposed or when the transport fork 24 supports the heated substrate after the baking process on the support surface 241, the transport fork 24 that is less likely to be bent can be obtained.

なお、搬送フォーク２４の撓みが抑制されると、搬送フォーク２４の撓みを考慮して基板焼成炉２のラックピッチｄ（図３参照）を大きく設定する必要がなくなる。また、搬送フォーク２４の厚みが薄くなると、その分だけラックピッチｄを小さくすることができる。ラックピッチｄを小さくすることによって基板焼成炉２の高さが低くなり、基板焼成炉２が小型化される。これにより、熱損失の低減、製造コストの低減、といった効果が得られる。また、ラックピッチｄが小さくなれば、単位高さあたりに処理可能な基板の枚数が増加するため、基板焼成炉２に格納可能な基板の枚数を増加させることができる。すなわち、基板焼成炉２の処理能力を向上させることができる。さらに、基板焼成炉２の高さの最大値が例えば輸送限界高さ等によって制限されている場合であっても基板焼成炉２の分割が不要となるため、密閉化が容易となる。   If the bending of the transport fork 24 is suppressed, it is not necessary to set the rack pitch d (see FIG. 3) of the substrate firing furnace 2 in consideration of the bending of the transport fork 24. Further, when the thickness of the transport fork 24 is reduced, the rack pitch d can be reduced accordingly. By reducing the rack pitch d, the height of the substrate baking furnace 2 is reduced, and the substrate baking furnace 2 is downsized. Thereby, effects such as reduction in heat loss and reduction in manufacturing cost can be obtained. Further, if the rack pitch d is reduced, the number of substrates that can be processed per unit height increases, so that the number of substrates that can be stored in the substrate baking furnace 2 can be increased. That is, the processing capacity of the substrate baking furnace 2 can be improved. Further, even if the maximum height of the substrate baking furnace 2 is limited by, for example, the transport limit height, the division of the substrate baking furnace 2 is not necessary, so that sealing is facilitated.

また、上記の実施の形態に係る搬送フォーク２４においては、本体部材ＢをＣＦＲＰによって形成することによって、搬送フォーク２４を、高強度かつ軽量で、衝撃および熱に強いものとすることができる。   In the transport fork 24 according to the above-described embodiment, the main body member B is formed of CFRP, so that the transport fork 24 can be made strong and lightweight and resistant to impact and heat.

〈５．変形例〉
上記の実施の形態においては、搬送フォーク２４の本体部材Ｂはハニカム構造とし、その下面は開放されるものとしたが、本体部材Ｂを、下面が閉じられたハニカム構造により構成してもよい。図７には、この変形例に係る搬送フォーク２４ｔの一部切り欠き斜視図が示されている。ただし、この変形例に係る本体部材Ｂｔにおいては、ハニカム構造体部分ｂｔ１の下面と接合される下面部分ｂｔ２は、ハニカム構造体部分ｂｔ１と同じ種類の材質を材料として形成する。すなわち、本体部材Ｂｔは全体として１種類の材料にて形成する。これにより、第１の実施の形態に係る搬送フォーク２４と同様、搬送フォーク２４ｔについても、焼成処理温度のような高温下にさらされた場合に搬送フォーク２４ｔに生じる撓みが抑制される。 <5. Modification>
In the above embodiment, the main body member B of the transport fork 24 has a honeycomb structure and the lower surface thereof is opened. However, the main body member B may be configured by a honeycomb structure with the lower surface closed. FIG. 7 shows a partially cutaway perspective view of a transport fork 24t according to this modification. However, in the main body member Bt according to this modification, the lower surface portion bt2 joined to the lower surface of the honeycomb structure portion bt1 is formed of the same material as the honeycomb structure portion bt1. That is, the main body member Bt is formed of one kind of material as a whole. As a result, as with the transport fork 24 according to the first embodiment, the transport fork 24t is also prevented from being bent when it is exposed to a high temperature such as the firing temperature.

この変形例に係る搬送フォーク２４ｔによると、本体部材Ｂｔが下面が閉じられたハニカム構造により構成されるので、搬送フォーク２４ｔの強度（特に、ねじりに対する強度）を高めることができる。   According to the transport fork 24t according to this modified example, since the main body member Bt is configured by a honeycomb structure with the bottom surface closed, the strength (particularly, the strength against torsion) of the transport fork 24t can be increased.

基板焼成炉の概略斜視図である。It is a schematic perspective view of a substrate baking furnace. 基板焼成炉の横断面図である。It is a cross-sectional view of a substrate baking furnace. 基板焼成炉の縦断面図である。It is a longitudinal cross-sectional view of a substrate baking furnace. 基板搬送装置の概略斜視図である。It is a schematic perspective view of a board | substrate conveyance apparatus. 搬送フォークの一部切り欠き斜視図である。It is a partially cutaway perspective view of a conveyance fork. 搬送フォークが高温下にさらされた様子を模式的に示す図である。It is a figure which shows typically a mode that the conveyance fork was exposed to high temperature. 搬送フォークの一部切り欠き斜視図である。It is a partially cutaway perspective view of a conveyance fork. 従来の搬送フォークが高温下にさらされた様子を模式的に示す図である。It is a figure which shows typically a mode that the conventional conveyance fork was exposed to high temperature.

符号の説明Explanation of symbols

１ 基板搬送装置
２ 基板焼成炉
２４，２４ａ，２４ｂ 搬送フォーク
Ｂ，Ｂｔ 本体部材
Ｈ，Ｈｔ 天板部材 DESCRIPTION OF SYMBOLS 1 Substrate transfer apparatus 2 Substrate baking furnace 24, 24a, 24b Transfer fork B, Bt Main body member H, Ht Top plate member

Claims (9)

基板焼成炉に対する基板の搬出入を行う基板搬送装置であって、
基板を片持ち状態で支持する搬送フォークと、
前記搬送フォークを駆動して前記基板焼成炉にアクセスさせる駆動部と、
を備え、
前記搬送フォークが、
ハニカム構造体である本体部材と、
前記本体部材の上面に接合され、前記本体部材よりも熱膨張率の小さい材質にて形成されている天板部材と、
を備えることを特徴とする基板搬送装置。 A substrate transfer device for carrying a substrate in and out of a substrate baking furnace,
A transport fork that supports the substrate in a cantilevered state;
A drive unit for driving the transport fork to access the substrate baking furnace;
With
The transport fork is
A body member that is a honeycomb structure;
A top plate member joined to the upper surface of the main body member and formed of a material having a smaller coefficient of thermal expansion than the main body member;
The board | substrate conveyance apparatus characterized by the above-mentioned. 請求項１に記載の基板搬送装置であって、
前記本体部材が、炭素繊維強化樹脂にて形成されていることを特徴とする基板搬送装置。 The substrate transfer apparatus according to claim 1,
The substrate transfer apparatus, wherein the main body member is formed of a carbon fiber reinforced resin. 請求項１に記載の基板搬送装置であって、
前記本体部材が、セラミックスにて形成されていることを特徴とする基板搬送装置。 The substrate transfer apparatus according to claim 1,
The substrate transfer apparatus, wherein the main body member is formed of ceramics. 請求項１から３のいずれかに記載の基板搬送装置であって、
前記天板部材が、グラシックカーボンにて形成されていることを特徴とする基板搬送装置。 It is a board | substrate conveyance apparatus in any one of Claim 1 to 3,
The substrate transfer apparatus, wherein the top plate member is formed of glassy carbon. 請求項１から３のいずれかに記載の基板搬送装置であって、
前記天板部材が、ダイヤモンドライクカーボンにて形成されていることを特徴とする基板搬送装置。 It is a board | substrate conveyance apparatus in any one of Claim 1 to 3,
The substrate transport apparatus, wherein the top plate member is made of diamond-like carbon. 請求項１から３のいずれかに記載の基板搬送装置であって、
前記天板部材が、セラミックスにて形成されていることを特徴とする基板搬送装置。 It is a board | substrate conveyance apparatus in any one of Claim 1 to 3,
The board | substrate conveyance apparatus characterized by the said top-plate member being formed with ceramics. 請求項１から３のいずれかに記載の基板搬送装置であって、
前記天板部材が、樹脂にて形成されていることを特徴とする基板搬送装置。 It is a board | substrate conveyance apparatus in any one of Claim 1 to 3,
The board | substrate conveyance apparatus characterized by the said top-plate member being formed with resin. 請求項１から７のいずれかに記載の基板搬送装置であって、
前記ハニカム構造体が六角形を並べる形で作られた構造体であることを特徴とする基板搬送装置。 It is a board | substrate conveyance apparatus in any one of Claim 1 to 7,
A substrate transfer apparatus, wherein the honeycomb structure is a structure formed by arranging hexagons. 請求項１から７のいずれかに記載の基板搬送装置であって、
前記ハニカム構造体が四角形を並べる形で作られた構造体であることを特徴とする基板搬送装置。 It is a board | substrate conveyance apparatus in any one of Claim 1 to 7,
The substrate transport apparatus according to claim 1, wherein the honeycomb structure is a structure formed by arranging quadrangles.
JP2007151869A 2007-06-07 2007-06-07 Substrate transfer device Expired - Fee Related JP4287889B2 (en)

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KR1020080053406A KR20080108054A (en) 2007-06-07 2008-06-06 Substrate transporting unit

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JP2014077567A (en) * 2012-10-09 2014-05-01 Toa Kogyo Kk Multistage heating furnace system
WO2017038740A1 (en) * 2015-08-31 2017-03-09 豊田鉄工株式会社 Workpiece conveyance device for heating furnace
JP2017074643A (en) * 2015-10-15 2017-04-20 豊田鉄工株式会社 Device for carrying in/out workpiece to/from furnace
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Cited By (10)

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Publication number Priority date Publication date Assignee Title
JP2014077567A (en) * 2012-10-09 2014-05-01 Toa Kogyo Kk Multistage heating furnace system
WO2017038740A1 (en) * 2015-08-31 2017-03-09 豊田鉄工株式会社 Workpiece conveyance device for heating furnace
JP2017047490A (en) * 2015-08-31 2017-03-09 豊田鉄工株式会社 Work carrying device for heating furnace
US10527353B2 (en) 2015-08-31 2020-01-07 Toyoda Iron Works Co., Ltd. Workpiece transfer apparatus for furnace
JP2017074643A (en) * 2015-10-15 2017-04-20 豊田鉄工株式会社 Device for carrying in/out workpiece to/from furnace
WO2017065254A1 (en) * 2015-10-15 2017-04-20 豊田鉄工株式会社 Apparatus for loading workpieces into/out of heating furnace
CN108136598A (en) * 2015-10-15 2018-06-08 丰田铁工株式会社 It moves out for the workpiece of heating furnace and moves in device
EP3363605A4 (en) * 2015-10-15 2019-03-13 Toyoda Iron Works Co., Ltd. Apparatus for loading workpieces into/out of heating furnace
US11224976B2 (en) 2015-10-15 2022-01-18 Toyoda Iron Works Co., Ltd. Apparatus for loading/unloading workpieces into/from furnace
CN112239069A (en) * 2019-07-19 2021-01-19 亚智科技股份有限公司 Forked substrate conveying device and method thereof

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