JP2008305838A - Semiconductor device and mounting structure thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the junction reliability of solder joining portions of the inside and outside of a semiconductor device while improving heat dissipation performance on heat dissipating surfaces of a plurality of semiconductor structures different in mounting height in a semiconductor device having the semiconductor structures. <P>SOLUTION: Thermal conductivity elastic bodies 8, 9 are provided for each of a plurality of LSI packages 2, 3 mounted on a system-in package 1, the elastic modulus of the thermal conductivity elastic body 8 provided on a heat dissipation surface 2B of the LSI package 2 having a low mounting height is set higher than the elastic modulus of the thermal conductivity elastic body 9 provided on a heat dissipation surface 3B of the LSI package 3 having high mounting height, and the thickness of the thermal conductivity elastic body 8 is larger than that of the thermal conductivity elastic body 9. With this configuration, a load 35 can be substantially uniformly applied to all the thermal conductivity elastic bodies 8, 9 of the mounted LSI packages 2, 3, and heat generated in the LSI packages 2, 3 can be dissipated without impairing heat dissipation performance. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device in which a plurality of semiconductor structure products (LSI package or bare chip) are incorporated and a mounting structure thereof, and more particularly to a semiconductor device having a plurality of semiconductor structure products having different mounting heights and a mounting structure thereof.

  A heat dissipation technique of a multi-chip module (Multi Chip Module) in which a plurality of unpackaged semiconductor elements (bare chips) are mounted on an interposer is described (for example, see Patent Documents 1, 2, and 3).

  In addition, a structure is disclosed in which heat generated from a plurality of semiconductors mounted on a substrate at different heights is radiated to a heat radiating body using a heat radiating sheet (see, for example, Patent Document 4).

In addition, in System In Package (SIP), a structure is described in which an external connection terminal for connecting to a motherboard is provided on the side opposite to the LSI (Large Scale Integrated circuit) package mounting side of the interposer. (For example, refer nonpatent literature 1).
Japanese Patent Publication No.62-59887 Japanese Patent Laid-Open No. 7-32257 JP-A-11-26659 JP 2002-261206 A Industrial Research Co., Ltd., published on July 25, 2005, edited by Takashi Akazawa, "All about SiP technology-key technology for high-performance and small packaging", page 193

  A system-in-package is known as an example of a semiconductor device in which a plurality of semiconductor structure products (for example, an LSI package and a bare chip) are incorporated. The system-in package includes, for example, an LSI package on which a semiconductor element having a microcomputer function is mounted, and a memory such as a dynamic random access memory (DRAM) or a static random access memory (SRAM). Some of them have a plurality of LSI packages on which semiconductor elements having the above functions are mounted.

  An LSI package on which these semiconductor elements having different functions are mounted is provided with a connection terminal that is packaged to enable connection to the outside. Each LSI package is mounted and connected to an interposer made of a printed wiring board or the like via respective connection terminals. An external connection terminal for connecting the system-in package to the mother board (mounting substrate) is provided on the back surface of the interposer opposite to the surface on the LSI package mounting side.

  In such a system-in-package, as described above, a plurality of LSI packages having different semiconductor element functions are mounted. However, when the semiconductor element functions are different, the size, thickness, and required number of terminals of the semiconductor element also function. Therefore, the structure, size, and thickness of the LSI package on which the semiconductor element is mounted are different. Furthermore, when purchasing commercially available LSI packages and mounting them on an interposer, the height of each LSI package is often different.

  For this reason, when the LSI package is mounted on the interposer, the mounting height of the LSI package (the height from the surface on the LSI package mounting side of the interposer to the heat radiation surface of the LSI package) differs for each LSI package.

  Such a system-in-package is mounted on, for example, various portable electronic devices, automobile devices such as an engine control unit and a car navigation system. These devices are required to have high performance, high functionality, and miniaturization. For this reason, it is desired to reduce the mounting density as much as possible, such as reducing the mounting height from the motherboard when the system-in-package itself is miniaturized and mounting it on the device.

  Furthermore, in recent years, the performance and functionality of devices equipped with a system in package have been improved, and the system in package is also required to process a large amount of data at high speed. For this reason, the frequency of use of the mounted LSI package has increased, and the amount of heat generated by the LSI package has also increased. In order to stably operate an LSI package, the temperature of the LSI package (or the temperature of the mounted semiconductor element) must be kept below a predetermined temperature determined for each LSI package (or semiconductor element). is necessary. Therefore, it is indispensable to provide means for radiating heat generated by the LSI package.

  A heat dissipation technique of a multi-chip module having a structure similar to the system-in-package and having a plurality of semiconductor elements (bare chips) mounted on an interposer is disclosed in Patent Document 1 (Japanese Patent Publication No. 62-59887) and Patent Document 2 (Japanese Patent Laid-Open No. 7-32257) and Patent Document 3 (Japanese Patent Laid-Open No. 11-26659). As a heat dissipation means common to these, the heat dissipation surface of the semiconductor element (surface opposite to the surface on the interposer side) is passed through an adhesive, thermal compound, and solder having good thermal conductivity, and a metal heat dissipation plate or A configuration is used in which a block is interposed to connect to the heat sink.

  Further, in a multichip module in which a plurality of LSIs and semiconductor elements are mounted, the height and inclination of the LSI and semiconductor elements may vary, but in the multichip modules disclosed in Patent Documents 1 to 3, means for absorbing this variation or The structure which does not impair thermal conductivity with the means etc. which are utilized is used.

  When a semiconductor device such as a system-in-package targeted by the present invention is mounted on, for example, an automobile device, the heat dissipation surface of the LSI package (the side opposite to the surface on the interposer side) is used to dissipate heat generated from the LSI package. A structure has been devised in which a heat conducting member is provided on the surface of the external device and joined to a part of the housing of the external device via the heat conducting member. This configuration is effective in achieving both miniaturization of automobile equipment and high heat dissipation. When joining the housing and the heat radiation surface of the LSI package, means for joining by applying a load from the housing side is used in order to increase the joining reliability of the two. By applying a load, the heat conductive member itself or a part of the heat conductive member is compressed and deformed.

  In addition, a part of the housing for joining the LSI package is fixed after the load is applied so that the load applied at the time of joining is maintained after the joining. For this fixing, means such as fixing a part of the casing to another rigid casing is used. Therefore, the LSI package mounted on the automobile device is in a state where a load is always applied from the heat radiation surface of the LSI package even after mounting.

  However, the present inventors have found that the multichip modules disclosed in Patent Documents 1 to 3 have the following problems.

  First, in the technique described in Japanese Patent Publication No. 62-59887, a cap as a heat dissipation device is provided on a substrate on which a semiconductor chip is mounted, and the thermal conductivity is good between the cap on the side opposite to the mounting surface of the semiconductor chip. A technique is disclosed in which an adhesive and a metal plate are interposed, a cap and a substrate are joined to hermetically seal a semiconductor chip, and a gap is provided between the metal plate and the cap. In this technique, since a gap is provided between the semiconductor element and the cap, a load generated when a heat sink is joined on the cap is not applied to the semiconductor chip. Therefore, it is effective for deterioration of characteristics and failure control due to this load.

  However, since there is a gap between the semiconductor element and the cap, the thermal resistance of this portion is high, and there arises a problem that sufficient heat dissipation cannot be obtained when the amount of heat generated by the semiconductor chip increases. Further, since the entire semiconductor chip is covered with a cap to hermetically seal the periphery of the semiconductor chip, an area for providing the cap around the semiconductor chip is required. When this structure is applied to a system-in-package, the area occupied by the system-in-package increases in the equipment to be mounted, and the system-in package cannot be reduced in size.

  Japanese Patent Application Laid-Open No. 7-32257 describes that the chip height is adjusted in accordance with the heat generation amount of the semiconductor chip constituting the multichip module. Among the plurality of chips, the chip having high power consumption is mounted with a height higher than that of the chip having low power consumption. However, in the system in package targeted by the present invention, it is assumed that a commercially available LSI package in which a semiconductor element having a predetermined function is packaged is mounted on the interposer.

  This is to facilitate handling when an LSI package is mounted on the interposer. In addition, when an LSI package is mounted on an interposer, a load may be applied from the upper surface of the LSI package. This also has an effect of suppressing damage to a semiconductor element mounted by this load. Since the external size of a commercially available LSI package is determined by the standard or the manufacturer's standard, the height of the semiconductor element or LSI package cannot be changed according to the power consumption of the semiconductor element. Further, in this technique, a technique is described in which a recess is provided on the surface of a heat sink corresponding to a plurality of semiconductor chips, and the semiconductor chip and the heat sink are joined with a heat conductive material in the recess. Due to the recesses and the partition walls between the recesses, it is possible to prevent the heat conductive material from being biased only to the tall semiconductor chip, and the effect that the short semiconductor chip can be joined to the heat sink can be obtained. However, while having such an effect, there is a problem in that the manufacturing cost increases due to the formation of the recess in the heat sink.

  In the multi-chip module described in Japanese Patent Application Laid-Open No. 11-26659, a heat conduction block is provided on each heat radiation surface of a plurality of mounted LSIs (semiconductor elements), and a heat sink is provided at a position corresponding to the heat conduction block. A structure in which a plurality of recesses are provided and a part of the heat conduction block is accommodated in the recesses is disclosed. In this technique, since the heat conduction block partially accommodated in the recess of the heat sink can change the height and inclination following the heat radiation surface of each LSI, variations in the height and inclination of the LSI can be absorbed. On the other hand, there is a problem that the mounting height of the LSI is increased by providing a heat conduction block that can be stored in the recess of the heat sink on the heat dissipation surface of the LSI. Further, it is necessary to align the recesses of the heat dissipation block and the heat sink. In the LSI packaging process, alignment can be performed with relatively high accuracy. However, it is difficult to form a recess in the housing of an external device that uses various mounting forms as a system-in-package, and to accurately store the heat conduction block provided on the heat dissipation surface of each LSI package. In such a case, there arises a problem that the manufacturing cost increases.

  A semiconductor device such as a system-in-package targeted by the present invention is equipped with a plurality of LSI packages having different functions. Therefore, the thickness of the LSI package differs depending on the function. The mounting height will also be different. When a system-in-package that mounts LSI packages with different mounting heights is mounted on a housing of an external device and the heat dissipation surface of the LSI package and the housing are joined via a heat conducting member, the following problems are expected: .

  First, when the difference in the mounting height of the LSI package cannot be sufficiently absorbed by the joint portion including the heat conduction member, the load applied when joining the heat radiation surface of the LSI package and the housing is high. It will be added to the LSI package. For this reason, the thermal resistance of the joint portion of the LSI package having a high mounting height is reduced, and high heat dissipation is obtained. On the other hand, since a sufficient load is not applied to an LSI package with a low mounting height, the space between the heat radiation surface of the LSI package and the housing becomes wider than an LSI package with a high mounting height, or a gap is generated at the joint. As a result, the thermal resistance increases and the heat dissipation is impaired.

  Also, if an uneven load is applied to an LSI package with a high mounting height, the joint between the LSI package and the interposer of the system-in-package, and the joint between the interposer directly below the LSI package and the motherboard A high load acts on the. A solder material (Sn-3Ag-0.5Cu, Sn-37Pb, etc.) is generally used for these joints.

  When a device equipped with a system in package is used in an automobile, the entire system in package is exposed to a high temperature environment when the device is mounted in the vicinity of the engine or in contact with the engine room. The temperature of the system-in package is further increased by the heat generated by the operation of the LSI package in addition to the environmental temperature. Therefore, the temperature of the joint portion where the solder material is used also becomes high. However, when the above-described high load is applied at this high temperature state, the solder material creeps and the adjacent solder joint portion comes into contact and an electrical failure occurs. Occurrence becomes a problem.

  Next, in Patent Document 4 (Japanese Patent Application Laid-Open No. 2002-261206), a plurality of semiconductors having different mounting heights are radiated by interposing heat dissipation sheets having different thicknesses between the heatsinks. Techniques for performing are described. When this technology is applied to a semiconductor device such as a system-in-package that is the subject of the present invention, considering the manufacturing variation and assembly variation of the thickness of the heat dissipation sheet, sufficient bonding can be achieved when a load is applied from the housing side. There is a problem that reliability cannot be obtained and thermal resistance increases.

  In addition, when a semiconductor device such as a system-in-package that employs this technology is mounted for portable electronic equipment or in-vehicle use, it may be considered that a sufficient space for disposing a radiator on the semiconductor device cannot be obtained. In particular, when the mounting heights of a plurality of LSI packages mounted in a semiconductor device are different, there is a problem that the heat dissipating body cannot be disposed on the LSI package and heat radiation cannot be performed sufficiently.

  The object of the present invention is to suppress the loss of heat dissipation from the heat dissipation surface of the semiconductor structure product, and an excessive load is applied to the junction between the semiconductor structure product and the interposer and between the interposer and the mounting substrate. It is in providing the technique which can suppress this.

  Another object of the present invention is to provide a technique capable of suppressing an increase in volume or area occupied by a semiconductor device in a housing of an external device.

  Furthermore, another object of the present invention is to provide a technique capable of suppressing processing corresponding to the mounting height of the semiconductor structure product on the housing of the external device to which the heat dissipation surface of the semiconductor structure product is joined. It is in.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.

  That is, the present invention is a semiconductor device that includes a plurality of semiconductor structures each having a semiconductor element and having different mounting heights, and includes one main surface and the other main surface on the opposite side. An interposer in which the plurality of semiconductor structure products are mounted on a main surface of the interposer, a plurality of external connection terminals provided on the other main surface of the interposer, and an interposer side of each of the plurality of semiconductor structure products A heat conductive member including a heat conductive elastic body provided on a surface opposite to the surface of the plurality of semiconductor structures, and the thermal conductivity provided on the semiconductor structure having a low mounting height among the plurality of semiconductor structures. The elastic modulus of the elastic body is made larger than the elastic modulus of the thermally conductive elastic body provided in the semiconductor structure having a high mounting height.

  Further, the present invention is a mounting structure of a semiconductor device having a plurality of semiconductor structures each having a semiconductor element and having different mounting heights, and (a) the plurality of semiconductor structures are on one main surface. The mounted interposer, the plurality of external connection terminals provided on the other main surface of the interposer, and the surface opposite to the surface on the interposer side of each of the plurality of semiconductor structures and conducting heat A thermal conductive member including a conductive elastic body, and the elastic modulus of the thermal conductive elastic body provided in the semiconductor structure product having a low mounting height among the plurality of semiconductor structure products, wherein the mounting height is high. A semiconductor device made larger than the elastic modulus of the thermally conductive elastic body provided in the semiconductor structure, (b) a mounting substrate on which the semiconductor device is mounted via the plurality of external connection terminals, and (c) the plurality of the plurality Semiconductor structure products A housing of an external device that is joined via the heat conducting member provided on the semiconductor device and disposed outside the semiconductor device, wherein the housing is the plurality of semiconductor structures via the heat conducting member. It is directly attached to.

  Of the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  Among the plurality of semiconductor structures mounted on the interposer, the elastic modulus of the heat conductive elastic body provided in the semiconductor structure with a low mounting height is the heat conductive elastic body provided in the semiconductor structure with a high mounting height. By making it larger than the elastic modulus, it is possible to apply a load almost evenly to the heat conducting members of all the mounted semiconductor structures. As a result, since the heat radiation surfaces of all the semiconductor structure products mounted on the semiconductor device and the device housing are stably joined, the heat generated in the semiconductor structure products can be radiated without impairing the heat radiation performance.

  That is, by making the elastic modulus of the heat conductive elastic body provided in the semiconductor structure product with a low mounting height higher than the elastic modulus of the heat conductive elastic body provided in the semiconductor structure product with a high mounting height, When joining the heat-dissipating surface to the equipment housing on which this semiconductor device is mounted via a heat conducting member, the low thermal modulus thermal conductivity provided in the semiconductor structure with high mounting height due to the load applied from the housing side The amount of deformation of the elastic body is larger than that of a heat-conductive elastic body having a high elastic modulus provided in a semiconductor structure having a low mounting height. As a result, a load is also applied to the heat conductive elastic body provided in the semiconductor structure having a low mounting height. Therefore, it is possible to apply a load evenly to the heat conducting members provided on the heat radiating surfaces of the plurality of semiconductor structures having different mounting heights.

  As a result, the heat radiation surfaces of all the semiconductor structure products mounted on the semiconductor device and the device housing are stably joined, so that the heat dissipation of the heat generated in the semiconductor structure products is not impaired. Furthermore, since the load applied from the device housing to the semiconductor structure is not biased, it is possible to suppress the application of a high load that causes an electrical failure to the solder joint. That is, it is possible to suppress an excessive load from being applied to the joint portions between the semiconductor structure and the interposer and between the interposer and the mounting substrate.

  In addition, since it is not necessary to process a recess or the like for alignment at a position corresponding to the semiconductor structure on the side of the equipment housing on which the semiconductor device is mounted, the degree of freedom in mounting the semiconductor device is improved. In other words, even when the arrangement and number of semiconductor structures mounted on a semiconductor device have changed, the conventional equipment can be used on the equipment housing side, and function expansion and design can be performed without increasing manufacturing costs. Can adapt to changes.

  In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

  Further, in the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments, but they are not irrelevant to each other unless otherwise specified. The other part or all of the modifications, details, supplementary explanations, and the like are related.

  Also, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), particularly when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and it may be more or less than the specific number.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted. Further, in order to make the drawings easy to understand, even a perspective view or a plan view may be hatched.

(Embodiment 1)
1 is a cross-sectional view showing an example of the structure of the semiconductor device according to the first embodiment of the present invention, FIG. 2 is a plan view showing the structure of the semiconductor device shown in FIG. 1, and FIG. 3 is a modification of the semiconductor device shown in FIG. FIG. 4 is a sectional view showing an example of the structure of a semiconductor structure mounted on the semiconductor device shown in FIG. 1, and FIG. 5 is another semiconductor structure mounted on the semiconductor device shown in FIG. FIG. 6 is a cross-sectional view showing the structure of a semiconductor structure product of a modified example mounted on the semiconductor device shown in FIG. 1, and FIG. 7 is a cross-sectional view showing an example of the structure of FIG. Sectional drawing which shows an example of the relationship of the height to the surface of the heat conductive elastic body in a semiconductor structure article, FIG. 8: is sectional drawing which shows an example of the joining state to the housing | casing of the external apparatus of the semiconductor device shown in FIG. FIG. 9 is a cross-sectional view showing the structure of a semiconductor device according to a modification of the first embodiment of the present invention, and FIG. It is a sectional view showing a joined state of the housing of the external device of the semiconductor device of the modification shown in 9.

  The semiconductor device according to the first embodiment is obtained by mounting a plurality of semiconductor structures such as semiconductor elements and semiconductor packages (LSI packages) having different mounting heights on a wiring board (interposer). In the first embodiment, a system-in-package 1 in which three semiconductor packages are mounted on a wiring board will be described as an example of the semiconductor device.

  The system-in-package 1 according to the first embodiment is mounted on, for example, various portable electronic devices, automobile devices such as an engine control unit or a car navigation system. Since downsizing as well as functionalization is required, the system-in-package 1 is also downsized, and the mounting density from the mounting board when it is mounted on the device is reduced as much as possible. It is desired to make it smaller.

  The schematic configuration of the system-in-package 1 according to the first embodiment shown in FIGS. 1 and 2 will be described. The front surface (one main surface) 4A and the opposite back surface (the other main surface) 4B are provided. An interposer 4 having three semiconductor structures mounted on the front surface 4A, a plurality of external connection terminals 5 provided on the back surface 4B of the interposer 4, and three semiconductor structures (one LSI package 2 and two LSI package 3) a heat conducting member provided on each interposer side surface (mounting surface 2A, 3A) and opposite surface (heat radiation surface 2B, 3B) and including heat conductive elastic bodies 8, 9; Have.

  Further, of the three semiconductor structure products (one LSI package 2 and two LSI packages 3), the elastic modulus (E8) of the heat conductive elastic body 8 provided in the LSI package 2 having a low mounting height is expressed as the mounting height. The thickness (8t) of the heat conductive elastic body 8 provided in the LSI package 2 having a higher mounting height than the elastic modulus (E9) of the heat conductive elastic body 9 provided in the LSI package 3 having a high mounting height. The thickness (9t) of the heat conductive elastic body 9 provided in the LSI package 3 having a high mounting height is set.

  That is, in the system-in-package 1, the elastic modulus of the heat conductive elastic bodies 8 and 9 which are heat conductive members provided on the LSI package 2 and the LSI package 3 has a relationship of E8> E9, and The thicknesses of the heat conductive elastic bodies 8 and 9 have a relationship of 8t> 9t.

  Next, the detailed configuration of the system in package 1 shown in FIGS. 1 and 2 will be described.

  In the system-in-package 1, an LSI package (semiconductor structure product) 2 and an LSI package (semiconductor structure product) 3 are connected to a surface 4 A, which is one main surface of the interposer 4, via respective connection terminals 6 and 7. ing. The connection terminals 6 and 7 are provided on the mounting surfaces (interposer side surfaces) 2A and 3A of the LSI packages 2 and 3, respectively. A plurality of external connection terminals 5 for mounting the system-in-package 1 on an external device and establishing electrical conduction are formed on the back surface 4B, which is the other main surface of the interposer 4.

  Further, the heat radiation surfaces (opposite surfaces) 2B and 3B of the LSI packages 2 and 3 are provided with heat conductive elastic bodies 8 and 9 which are heat conductive members, respectively. The first embodiment shows a system-in-package 1 in which two types of LSI packages 2 and 3 having different mounting heights are mounted. As shown in FIG. 1, the mounting height 2h of the LSI package 2 is the LSI The mounting height of the package 3 is lower than 3h (2h <3h). The LSI packages 2 and 3 are placed flat on the surface 4A of the interposer 4, and an example is shown in which one LSI package 2 and two LSI packages 3 having the same structure are mounted.

  In the system-in-package 1 of the first embodiment, for example, the LSI package 2 is packaged with the semiconductor element 21 shown in FIG. 4 having a microprocessor (Micro Processing Unit) function. On the other hand, the semiconductor device 21 shown in FIG. 5 having a memory function such as a dynamic access memory is packaged in the LSI package 3.

  Note that, as in the system-in-package 1 shown in the modification example of FIG. The underfill 20 may be filled as shown in FIG. 3, or may not be filled as shown in FIG.

  Next, an example of a specific structure of the LSI packages 2 and 3 mounted on the system-in-package 1 will be described. The LSI package 2 is, for example, a wafer process package as shown in FIG. The configuration is such that a rewiring 24 is formed in the first insulating layer 25 on the passivation 23 formed on the main surface 21A of the semiconductor element 21, and the pads 22 and the connection terminals 6 which are electrodes on the main surface 21A are connected to this. It is a small semiconductor package electrically connected by rewiring 24. That is, the LSI package 2 (wafer process package) shown in FIG. 4 is obtained by rearranging the arrangement of the pads 22 of the semiconductor element 21 to the arrangement of the connection terminals 6 by the rewiring 24. A second insulating layer 26 is formed on the uppermost layer on the main surface 21 </ b> A of the semiconductor element 21, and the second insulating layer 26 is exposed.

  FIG. 5 shows an example of a specific structure of the LSI package 3. The low elastic body 27 is disposed on the main surface 21 </ b> A of the semiconductor element 21, and the leads 29 are provided on the low elastic body 27. This is a chip size package in which an insulating tape 28 is provided and a plurality of connection terminals 7 are arranged on the insulating tape 28. Note that the pads 22 that are electrodes on the main surface 21 </ b> A of the semiconductor element 21 and the connection terminals 7 are electrically connected via leads 29 of the insulating tape 28. The joint between the pad 22 and the lead 29 and the periphery of the semiconductor element 21 are sealed with a sealing resin 30.

  FIG. 6 shows a configuration of an LSI package 34 as a modification of the LSI package 3. The semiconductor element 21 is mounted on the package substrate 32 via the adhesive layer 33, and the electrode on the main surface 21 </ b> A of the semiconductor element 21. The pad 22 is electrically connected to the package substrate 32 through the wire 31. A plurality of connection terminals 7 are provided on the back surface side of the package substrate 32, and the plurality of wires 31 and the semiconductor element 21 are sealed with a sealing resin 30.

  As described above, the system-in package 1 includes, for example, the LSI package 2 as shown in FIG. 4 and the LSI packages 3 and 34 as shown in FIG. 5 or FIG.

  Further, in the system in package 1 of the first embodiment (including the system in package 1 of the modification shown in FIG. 3), heat provided on the heat radiation surface 2B of the LSI package 2 having a low mounting height (2h). The elastic modulus (E8) of the conductive elastic body 8 is larger (higher) than the elastic modulus (E9) of the heat conductive elastic body 9 provided on the heat radiation surface 3B of the LSI package 3 having a high mounting height (3h). (Elastic modulus: E8> E9). Furthermore, as shown in FIG. 7, the thickness (8t) of the heat conductive elastic body 8 is larger than the thickness (9t) of the heat conductive elastic body 9 (8t> 9t). The thicknesses of the heat conductive elastic bodies 8 and 9 are the same as those of the heat conductive elastic bodies 8 and 9 of the LSI packages 2 and 3 provided with the heat conductive elastic bodies 8 and 9, respectively, from the surface 4A of the interposer 4. The heights 10 and 11 to the surfaces 8A and 9A are adjusted so as to satisfy the relationship of 11 ≧ 10.

  Here, when the system in package 1 of the first embodiment is mounted on an external device, the system in package 1 is connected to the external device by the external connection terminal 5 provided on the back surface 4B of the interposer 4 as shown in FIG. The system in package 1 is fixed and electrically connected to the mother board 14 which is a mounting board. At that time, the surfaces 8A and 9A of the heat conductive elastic bodies 8 and 9 provided respectively on the heat radiation surfaces 2B and 3B of the plurality of LSI packages 2 and 3 are joined to the housing 15 of the external device.

  That is, the system-in-package 1 is directly attached via the housing 15 of the external device and the heat conductive elastic bodies 8 and 9 arranged outside thereof. That is, the LSI package 2 and the LSI package 3 on the interposer 4 are directly attached to the housing 15 of the external device via the heat conductive elastic bodies 8 and 9, respectively.

  Therefore, even if the system in package 1 is mounted directly in the housing 15 of an external device without attaching a heat radiating body such as a heat radiating fin, the system in package 1 1 can be reduced in size while improving heat dissipation.

  Further, when the thermally conductive elastic bodies 8 and 9 and the casing 15 are joined in the system-in-package 1, in order to improve the joining property and suppress the deterioration of the heat dissipation characteristics, as shown in FIG. A load 35 is applied from the side. Unlike the weight of the casing 15 itself, this load 35 is intentionally applied from the casing 15 side at the time of bonding in order to increase the bonding reliability between the heat radiation surfaces 2B and 3B of the LSI packages 2 and 3 and the casing 15. Yes, by applying this load 35, the heat conductive elastic bodies 8, 9 themselves or a part of the heat conductive elastic bodies 8, 9 can be compressed and deformed.

  Note that a part of the casing 15 to be joined to the LSI packages 2 and 3 is fixed after the load is applied so that the load 35 applied at the time of joining is maintained after the joining. For this fixing, a means such as fixing a part of the casing 15 to another highly rigid casing 15 is used. Therefore, in the system-in-package 1 mounted on the automobile device, the load 35 is always applied to the heat radiation surfaces 2B and 3B of the LSI packages 2 and 3 even after the mounting.

  Thereby, the heat conductive elastic bodies 8 and 9 are deformed (compressed), so that the bondability between the heat conductive elastic bodies 8 and 9 and the housing 15 can be strengthened.

  In the first embodiment, the thermal conductivity elastic body 8 formed in the LSI package 2 with the low mounting height 2h is used as the elastic modulus (E9) of the heat conductive elastic body 9 formed in the LSI package 3 with the high mounting height 3h. Lower than the elastic modulus (E8). Thereby, even if the height 11 from the surface 4A of the interposer 4 of the LSI package 3 to the surface 9A of the heat conductive elastic body 9 is higher than the height 10 of the LSI package 2, it is applied from the housing 15 side. The heat conductive elastic body 9 having a low elastic modulus can be easily deformed by the load 35.

  As a result, the casing 15 also contacts the surface 8A of the heat conductive elastic body 8 of the LSI package 2 having a low height 11, and a sufficient load 35 is applied. Therefore, the load 35 applied from the housing 15 can be applied evenly to all of the plurality of LSI packages 2 and 3, and the thermal resistance of the joint is increased due to poor joining between the heat conductive elastic bodies 8 and 9 and the housing 15. It is possible to suppress the deterioration of the heat dissipation characteristics due to.

  Therefore, when an external device equipped with the system in package 1 is used for an automobile device, the external device may be mounted in the vicinity of the engine or in contact with the engine room, and the entire system in package is exposed to a high temperature environment. However, according to the system-in-package 1 and the mounting structure of the first embodiment, the heat dissipation characteristics due to the increase in the thermal resistance of the joint due to the poor joint between the heat conductive elastic bodies 8 and 9 and the housing 15. Therefore, even if it is exposed to a high temperature environment, it can withstand, and it is very effective for in-vehicle use.

  Further, since the load 35 can be evenly applied to all of the plurality of LSI packages 2 and 3, the connection terminals 6 and 7 between the LSI packages 2 and 3 and the interposer 4, and the interposer 4 and the motherboard 14 It is possible to suppress an excessive load from acting locally on the external connection terminal 5 that connects. Thereby, it is possible to prevent electrical failure from occurring in the connection terminals 6 and 7 and the external connection terminal 5. Further, in the system-in-package 1 of the first embodiment, it is not necessary to perform processing for alignment with the LSI packages 2 and 3 on the housing 15 of the external device.

  That is, according to the system-in package 1 and the mounting structure of the first embodiment, the heat conduction provided in the LSI package 2 having a low mounting height among the plurality of LSI packages 2 and 3 mounted on the interposer 4. By making the elastic modulus of the elastic elastic body 8 larger than the elastic modulus of the thermal conductive elastic body 9 provided in the LSI package 3 having a high mounting height, the thermal conductivity of all of the mounted LSI packages 2 and 3 is increased. The load 35 can be applied to the elastic bodies 8 and 9 almost evenly.

  As a result, the heat radiation surfaces 2B and 3B of all the LSI packages 2 and 3 mounted on the system-in-package 1 and the housing 15 are stably joined, so that the heat generated in the LSI packages 2 and 3 can be dissipated. Heat can be dissipated without damage.

  That is, by making the elastic modulus of the heat conductive elastic body 8 provided in the LSI package 2 with a low mounting height higher than the elastic modulus of the heat conductive elastic body 9 provided in the LSI package 3 with a high mounting height, the LSI package. When the heat radiating surfaces 2B and 3B of 2 and 3 are joined to the housing 15 on which the system-in-package 1 is mounted via the heat conductive elastic bodies 8 and 9, the mounting height is increased by the load 35 applied from the housing 15 side. The low elastic modulus thermal conductive elastic body 9 provided in the high LSI package 3 has a larger deformation amount than the high elastic modulus thermal conductive elastic body 8 provided in the LSI package 2 having a low mounting height.

  As a result, the load 35 is also applied to the heat conductive elastic body 8 provided in the LSI package 2 having a low mounting height. Therefore, the load 35 can be evenly applied to the heat conductive elastic bodies 8 and 9 provided on the heat radiation surfaces 2B and 3B of the plurality of LSI packages 2 and 3 having different mounting heights.

  As a result, since the heat dissipation surfaces 2B and 3B of all the LSI packages 2 and 3 mounted on the system-in-package 1 and the casing 15 are stably joined, heat dissipation of the heat generated in the LSI packages 2 and 3 is achieved. Will not be damaged. Furthermore, since the load 35 applied from the housing 15 to the LSI packages 2 and 3 is not biased, it can be suppressed that a high load that causes an electrical failure is applied to the solder joint. That is, it is possible to suppress an excessive load from being applied to the joint portions between the LSI packages 2 and 3 and the interposer 4 and between the interposer 4 and the motherboard 14.

  Thereby, the joining reliability of the solder joint part in the system-in-package 1 can be improved.

  Further, in the system-in-package 1 of the first embodiment, the LSI package 2 and the LSI package 3 on the interposer 4 are directly attached to the housing 15 of the external device via the heat conductive elastic bodies 8 and 9, respectively. Yes. In other words, the system in package 1 can be mounted directly in the housing 15 of an external device without attaching a heat radiating body such as a heat radiating fin, so that the system in package 1 1 can be reduced in size while improving heat dissipation. Therefore, in addition to not attaching a heat radiating body such as a heat radiating fin to the system in package 1, sealing with a cap or the like is not performed, so that the volume or area occupied by the system in package 1 in the housing 15 of the external device is increased. Can be suppressed.

  That is, the mountability of the system in package 1 can be improved.

  In addition, since it is not necessary to process a recess or the like for alignment at a position corresponding to the LSI packages 2 and 3 on the side of the housing 15 on which the system-in-package 1 is mounted, the degree of freedom for mounting the semiconductor device is improved. That is, even when the arrangement and number of LSI packages 2 and 3 mounted on the system-in-package 1 are changed, the conventional housing 15 can be used without increasing the manufacturing cost. It can cope with function expansion and design change.

  Here, the interposer 4 is a multilayer wiring board mainly composed of a general-purpose resin such as an epoxy resin containing glass fiber or a BT resin, and the front surface 4A and the back surface 4B have connection terminals 6 and 7 and external terminals. Electrodes for joining the connection terminals 5 are provided, and a plurality of wirings are formed inside the substrate.

  The connection terminals 6 and 7 and the external connection terminal 5 are made of, for example, lead-free solder such as tin-silver (Ag) -copper (Cu) in addition to lead (Pb) -tin (Sn) solder. It is configured. Furthermore, the heat conductive elastic bodies 8 and 9 are mainly composed of a rubber material such as silicone rubber and acrylic rubber. The rubber material is filled with a thermally conductive inorganic filler in order to improve heat dissipation characteristics. The elastic modulus of the heat conductive elastic bodies 8 and 9 can be adjusted by the selection of the rubber material as the main material and the filling rate of the inorganic filler, and in particular, the elastic modulus can be increased by increasing the filling rate of the inorganic filler. . The thermal conductive elastic bodies 8 and 9 and the heat radiation surfaces 2B and 3B of the LSI packages 2 and 3 and the casing 15 may be bonded even if the thermal conductive elastic bodies 8 and 9 themselves are given adhesiveness. It is good and you may join using the thermoelectric adhesive different from this.

  Next, the system-in-package 36 shown in FIG. 9 is a modification of the system-in-package 1 of the first embodiment shown in FIG. 1, and is different from the configuration of FIG. 9, metal plates 12 and 13 made of copper (Cu), aluminum (Al), stainless steel or the like are formed on the surfaces 8A and 9A. By providing the metal plates 12 and 13, the thickness of the heat conductive elastic bodies 8 and 9 can be reduced. Since the heat conductivity of the metal plates 12 and 13 is higher than that of the heat conductive elastic bodies 8 and 9, the thermal resistance between the heat radiation surfaces 2A and 3A of the LSI packages 2 and 3 and the housing 15 can be reduced. This is effective when the LSI packages 2 and 3 generate a large amount of heat.

  Further, although the thicknesses of the metal plates 12 and 13 are the same, the thickness (8t) of the heat conductive elastic body 8 is larger than the thickness (9t) of the heat conductive elastic body 9 (8t> 9t). Has been. With this configuration, as shown in FIG. 10, when the metal plates 12 and 13 of the system-in-package 36 are joined to the housing 15 of the external device, the gap between the metal plates 12 and 13 and the housing 15 varies. The load 35 from the housing 15 side can be applied to the LSI packages 2 and 3 more evenly. In the system-in-package 36 shown in FIG. 10, the metal plates 12 and 13 and the housing 15 are joined with, for example, heat conductive adhesives 16 and 17.

  As a modification of the system-in-package 1 of FIG. 1 of the first embodiment, the thicknesses of the heat conductive elastic body 8 and the heat conductive elastic body 9 are the same (8t = 9t), and the respective elastic moduli are set. You can just change it. That is, the elastic modulus (E8) of the heat conductive elastic body 8 provided in the LSI package 2 with a low mounting height is larger than the elastic modulus (E9) of the heat conductive elastic body 9 provided in the LSI package 3 with a high mounting height. By making (higher), the height 11 (see FIG. 7) from the surface 4A of the interposer 4 of the LSI package 3 to the surface 9A of the thermal conductive elastic body 9 is higher than the height 10 of the LSI package 2 (higher). Even if the height 11> the height 10), the heat conductive elastic body 9 having a low elastic modulus can be easily deformed by the load 35 applied from the housing 15 side.

  As a result, the casing 15 also contacts the surface 8A of the heat conductive elastic body 8 of the LSI package 2 having a low height 10, and a sufficient load 35 is applied. Therefore, the load 35 applied from the housing 15 can be applied evenly to all of the plurality of LSI packages 2 and 3, and the thermal resistance of the joint is increased due to poor joining between the heat conductive elastic bodies 8 and 9 and the housing 15. It is possible to suppress the deterioration of the heat dissipation characteristics due to.

(Embodiment 2)
11 is a cross-sectional view showing an example of the structure of the semiconductor device according to the second embodiment of the present invention, and FIG. 12 is a cross-sectional view showing the structure of a modification of the semiconductor device shown in FIG.

  The basic configuration of the system in package of the second embodiment is the same as that of the system in package of the first embodiment shown in FIG. 1 except that the elastic modulus of the thermal conductive elastic bodies 8 and 9 and The thermal conductivity is made of the same material, and the thicknesses 8t and 9t are also the same. Furthermore, the metal plates 12 and 13 having different thicknesses are provided on the surfaces 8A and 9A of the heat conductive elastic bodies 8 and 9, respectively.

  First, in the system-in-package 37 shown in FIG. 11, the thickness 12t of the metal plate 12 provided on the LSI package 2 side with a low mounting height (2h) is equal to the LSI package 3 side with a high mounting height (3h). It is thicker than the thickness 13t of the metal plate 13 provided in (12t> 13t). Thus, the height 18 from the surface 4A of the interposer 4 on the LSI package 2 side to the surface 12A of the metal plate 12, and the height 19 from the interposer surface 4A on the LSI package 3 side to the surface 13A of the metal plate 13 Are identical (18 = 19).

  In addition, the thickness of the heat conductive elastic bodies 8 and 9 and the metal plates 12 and 13 includes the variation | mutation accept | permitted when manufacturing these. For this reason, the heights 18 and 19 from the surface 4A of the interposer 4 to the surfaces 12A and 13A of the metal plates 12 and 13 have variations and systems of the heat conductive elastic bodies 8 and 9 and the metal plates 12 and 13, respectively. Variations caused by the packaging of the in-package 37 are also included. The height 18 up to the surface 12A of the metal plate 12 and the height 19 up to the surface 13A of the metal plate 13 are the same in consideration of the aforementioned variations.

  When the system in package 37 of the second embodiment is mounted on an external device, the housing 15 of the external device and the surfaces 12A and 13A of the metal plates 12 and 13 of the system in package 37 are made of a heat conductive adhesive not shown. Are joined together. At this time, a load 35 as shown in FIG. 10 is applied from the housing 15 side, but in the second embodiment, the heights 18 and 19 to the surfaces 12A and 13A of the metal plates 12 and 13 of the LSI packages 2 and 3 are applied. Therefore, the load 35 is equally applied to each of the LSI packages 2 and 3 side.

  Therefore, the bonding property between the heat radiation surfaces 2B and 3B of the LSI packages 2 and 3 and the housing 15 of the external device can be strengthened, and the heat radiation characteristic is deteriorated due to the increase in the thermal resistance of the joint due to the poor bonding. Can be suppressed. Furthermore, it is possible to suppress an excessive load from acting locally on the connection terminals 6 and 7 between the LSI packages 2 and 3 and the interposer 4 and the external connection terminal 5 that connects the interposer 4 and the motherboard 14. Thereby, it is possible to prevent electrical failure from occurring in the connection terminals 6 and 7 and the external connection terminal 5.

  In addition, the elastic modulus of the heat conductive elastic bodies 8 and 9 can be adjusted by the filling amount of the heat conductive inorganic filler filled in the rubber material as the main material. Moreover, the heat conductivity of the heat conductive elastic bodies 8 and 9 becomes high with the filling amount of the inorganic filler. When the heat generation amounts of the plurality of LSI packages 2 and 3 mounted on the system-in-package 37 are high and the difference is small, it is advantageous from the viewpoint of heat dissipation to use a heat conductive elastic body having high heat conductivity. . The second embodiment is effective for application to the system-in-package 37 having such a configuration.

  Next, a system in package 38 shown in FIG. 12 shows a modification of the system in package 37 of the second embodiment shown in FIG. 11 is different from the system in package 37 of FIG. 11 in that only the heat conductive elastic bodies 8 and 9 are provided on the heat radiation surfaces 2B and 3B of the LSI packages 2 and 3, respectively. The thickness 8t of the heat conductive elastic body 8 provided on the side of the LSI package 2 having a low mounting height (2h) is the heat conductive elasticity provided on the side of the LSI package 3 having a high mounting height (3h). It is thicker than the thickness 9t of the body 9 (8t> 9t).

  Thus, the height 10 from the surface 4A of the interposer 4 on the LSI package 2 side to the surface 8A of the heat conductive elastic body 8 and the surface 4A of the interposer 4 on the LSI package 3 side of the heat conductive elastic body 9 are set. The height 11 up to the surface 9A is the same (10 = 11).

  When the system-in package 38 is mounted on an external device, the housing 15 of the external device and the heat conductive elastic bodies 8, 9 of the system-in package 38 are joined directly or indirectly. At this time, a load 35 as shown in FIG. 10 is applied from the housing 15 side, but in the system-in-package 38, the heights 10, 11 up to the surfaces 8A, 9A of the heat conductive elastic bodies 8, 9 are the same. As a result, the load 35 is equally applied to the LSI packages 2 and 3 side.

  Therefore, the bonding property between the heat radiation surfaces 2B and 3B of the LSI packages 2 and 3 and the housing 15 of the external device can be strengthened, and the heat radiation characteristic is deteriorated due to the increase in the thermal resistance of the joint due to the poor bonding. Can be suppressed. Furthermore, it is possible to suppress an excessive load from acting locally on the connection terminals 6 and 7 between the LSI packages 2 and 3 and the interposer 4 and the external connection terminal 5 that connects the interposer 4 and the motherboard 14. Thereby, it is possible to prevent electrical failure from occurring in the connection terminals 6 and 7 and the external connection terminal 5.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments of the invention. However, the present invention is not limited to the embodiments of the invention, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.

  For example, the heat conductive member provided on the LSI package (semiconductor structure) described in the first and second embodiments may be composed of a heat conductive elastic body alone or combined with a metal plate or the like. What is necessary is just to include a heat conductive elastic body at least.

  In addition, the thickness of the metal member may be adjusted instead of the heat conductive elastic body, and the thickness of the metal member provided in the LSI package with the low mounting height of the LSI package is set to the metal provided in the LSI package with the high mounting height. It may be thicker than the member.

  In the case where the heat conducting member is constituted by a heat conducting elastic body alone, the thickness of the heat conducting elastic body provided in the LSI package having a low mounting height is set to the LSI package having a high mounting height. It becomes the structure thicker than the heat conductive elastic body provided in.

  The semiconductor structure described in the first and second embodiments is not limited to a semiconductor package, and may be a bare chip that is flip-chip connected to an interposer.

  The present invention is suitable for a semiconductor device on which a plurality of semiconductor structure products are mounted.

It is sectional drawing which shows an example of the structure of the semiconductor device of Embodiment 1 of this invention. FIG. 2 is a plan view showing the structure of the semiconductor device shown in FIG. 1. FIG. 8 is a cross-sectional view showing a structure of a modification of the semiconductor device shown in FIG. 1. It is sectional drawing which shows an example of the structure of the semiconductor structure goods mounted in the semiconductor device shown in FIG. It is sectional drawing which shows an example of the structure of the other semiconductor structure goods mounted in the semiconductor device shown in FIG. It is sectional drawing which shows the structure of the semiconductor structure goods of the modification mounted in the semiconductor device shown in FIG. It is sectional drawing which shows an example of the relationship of the height to the surface of the heat conductive elastic body in the some semiconductor structure goods mounted in the semiconductor device shown in FIG. FIG. 2 is a cross-sectional view illustrating an example of a bonding state of the semiconductor device illustrated in FIG. 1 to a housing of an external device. It is sectional drawing which shows the structure of the semiconductor device of the modification of Embodiment 1 of this invention. It is sectional drawing which shows the joining state to the housing | casing of the external apparatus of the semiconductor device of the modification shown in FIG. It is sectional drawing which shows an example of the structure of the semiconductor device of Embodiment 2 of this invention. FIG. 12 is a cross-sectional view illustrating a structure of a modified example of the semiconductor device illustrated in FIG. 11.

Explanation of symbols

1 System in package (semiconductor device)
2 LSI package (semiconductor structure)
2A Mounting surface (surface on the interposer side)
2B Heat dissipation surface (opposite surface)
2h Mounting height 3 LSI package (semiconductor structure)
3A Mounting surface (surface on the interposer side)
3B Heat dissipation surface (opposite surface)
3h Mounting height 4 Interposer 4A Surface (one main surface)
4B Back side (the other main side)
5 External connection terminal 6 Connection terminal 7 Connection terminal 8 Thermally conductive elastic body (thermal conductive member)
8A Surface 8t Thickness 9 Thermally conductive elastic body (thermal conductive member)
9A surface 9t thickness 10 height from the surface of the interposer to the surface of the heat conducting elastic body 11 height from the surface of the interposer to the surface of the heat conducting elastic body 12 metal plate 12A surface 13 metal plate 13A surface 14 motherboard ( Mounting board)
DESCRIPTION OF SYMBOLS 15 Case 16 Thermal conductive adhesive 17 Thermal conductive adhesive 18 Height from the surface of an interposer to the surface of a metal plate 19 Height from the surface of an interposer to the surface of a metal plate 20 Underfill 21 Semiconductor element 21A Main surface 22 Pad (electrode)
23 Passivation 24 Rewiring 25 First Insulating Layer 26 Second Insulating Layer 27 Low Elasticity 28 Insulating Tape 29 Lead 30 Sealing Resin 31 Wire 32 Package Substrate 33 Adhesive Layer 34 LSI Package (Semiconductor Structure Product)
35 Load 36, 37, 38 System in package (semiconductor device)

Claims (5)

A semiconductor device having a plurality of semiconductor structures each having a semiconductor element and having different mounting heights,
An interposer comprising one main surface and the other main surface on the opposite side, wherein the plurality of semiconductor structures are mounted on the one main surface;
A plurality of external connection terminals provided on the other main surface of the interposer;
A heat conductive member including a heat conductive elastic body provided on a surface opposite to the interposer side surface of each of the plurality of semiconductor structures;
Among the plurality of semiconductor structures, the elastic modulus of the thermally conductive elastic body provided on the semiconductor structure having a low mounting height is the elasticity of the thermally conductive elastic body provided on the semiconductor structure having a high mounting height. A semiconductor device characterized by being larger than the rate. A semiconductor device having a plurality of semiconductor structures each having a semiconductor element and having different mounting heights,
An interposer comprising one main surface and the other main surface on the opposite side, wherein the plurality of semiconductor structures are mounted on the one main surface;
A plurality of external connection terminals provided on the other main surface of the interposer;
A heat conductive member including a heat conductive elastic body provided on a surface opposite to the interposer side surface of each of the plurality of semiconductor structures;
Among the plurality of semiconductor structures, the elastic modulus of the thermally conductive elastic body provided on the semiconductor structure having a low mounting height is the elasticity of the thermally conductive elastic body provided on the semiconductor structure having a high mounting height. The thickness of the thermally conductive elastic body provided on the semiconductor structure having a higher mounting height and the mounting height being lower than that of the thermal conductive elastic body provided on the semiconductor structure having a higher mounting height. A semiconductor device. A semiconductor device mounting structure comprising a plurality of semiconductor structures each having a semiconductor element and having different mounting heights,
(A) an interposer in which the plurality of semiconductor structure products are mounted on one main surface, a plurality of external connection terminals provided on the other main surface of the interposer, and each of the plurality of semiconductor structure products A heat conductive member provided on a surface opposite to the surface on the interposer side and including a heat conductive elastic body, and provided in the semiconductor structure product having a low mounting height among the plurality of semiconductor structure products. A semiconductor device in which the elastic modulus of the thermally conductive elastic body is larger than the elastic modulus of the thermally conductive elastic body provided in the semiconductor structure having a high mounting height;
(B) a mounting substrate on which the semiconductor device is mounted via the plurality of external connection terminals;
(C) including a housing of an external device joined via the heat conducting member provided on the plurality of semiconductor structures, and disposed outside the semiconductor device;
A mounting structure of a semiconductor device, wherein the casing is directly attached to the plurality of semiconductor structures through the heat conducting member. A semiconductor device mounting structure comprising a plurality of semiconductor structures each having a semiconductor element and having different mounting heights,
(A) an interposer in which the plurality of semiconductor structure products are mounted on one main surface, a plurality of external connection terminals provided on the other main surface of the interposer, and each of the plurality of semiconductor structure products A heat conductive member provided on a surface opposite to the surface on the interposer side and including a heat conductive elastic body, and provided in the semiconductor structure product having a low mounting height among the plurality of semiconductor structure products. A semiconductor device in which the elastic modulus of the thermally conductive elastic body is larger than the elastic modulus of the thermally conductive elastic body provided in the semiconductor structure having a high mounting height;
(B) a mounting substrate on which the semiconductor device is mounted via the plurality of external connection terminals;
(C) including a housing of an external device joined via the heat conducting member provided on the plurality of semiconductor structures, and disposed outside the semiconductor device;
A mounting structure of a semiconductor device, wherein a load is applied to the plurality of semiconductor structure products through the casing during and after the casing is bonded. A semiconductor device mounting structure comprising a plurality of semiconductor structures each having a semiconductor element and having different mounting heights,
(A) an interposer in which the plurality of semiconductor structure products are mounted on one main surface, a plurality of external connection terminals provided on the other main surface of the interposer, and each of the plurality of semiconductor structure products A heat conductive member provided on a surface opposite to the surface on the interposer side and including a heat conductive elastic body, and provided in the semiconductor structure product having a low mounting height among the plurality of semiconductor structure products. The thermal conductivity of the thermally conductive elastic body is larger than that of the thermally conductive elastic body provided in the semiconductor structure product having a high mounting height, and further provided in the semiconductor structure product having a low mounting height. A semiconductor device in which the thickness of the elastic body is thicker than the thickness of the thermally conductive elastic body provided in the semiconductor structure having a high mounting height;
(B) a mounting substrate on which the semiconductor device is mounted via the plurality of external connection terminals;
(C) including a housing of an external device joined via the heat conducting member provided on the plurality of semiconductor structures, and disposed outside the semiconductor device;
A mounting structure of a semiconductor device, wherein a load is applied to the plurality of semiconductor structure products through the casing during and after the casing is bonded.

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