JP2008300474A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a new and novel form completely different from conventional lateral and vertical semiconductor devices. <P>SOLUTION: The semiconductor device 10 comprises: an emitter electrode 76 electrically connected to the negative side polarity of a voltage source; a collector electrode 80 electrically connected to the positive side polarity of the voltage source; an emitter region 64 which is provided inside a semiconductor substrate 20 and is in direct contact with the emitter electrode 76; and a collector region 34 which is provided inside the semiconductor substrate 20 and is in direct contact with the collector electrode 32. A direction connecting the emitter region 64 and the collector region 34 is inclined to the vertical direction of the surface of the semiconductor substrate 20. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device.

  Conventional semiconductor devices are classified into horizontal semiconductor devices and vertical semiconductor devices. The horizontal semiconductor device is characterized in that both of the pair of main electrodes are provided on the surface of the semiconductor substrate. The vertical semiconductor device is characterized in that one of the pair of main electrodes is provided on the surface of the semiconductor substrate, and the other is provided on the back surface of the semiconductor substrate. An example of a horizontal semiconductor device is disclosed in Patent Document 1, and an example of a vertical semiconductor device is disclosed in Patent Document 2.

JP 11-054748 A JP 7-135309 A

  In the horizontal semiconductor device, current flows in a concentrated manner on the surface of the semiconductor substrate, so that destruction of the semiconductor device due to current concentration becomes a problem. In the vertical semiconductor device, since the breakdown voltage is limited by the thickness of the semiconductor substrate, for example, there is a problem that the vertical semiconductor devices having different breakdown voltages cannot be mixedly mounted on one semiconductor substrate.

The above problems of each of the conventional horizontal semiconductor device and vertical semiconductor device arise from their morphological characteristics. For this reason, it is difficult to solve the above problem as long as the conventional configuration is adopted for the horizontal semiconductor device and the vertical semiconductor device.
An object of the present invention is to provide a semiconductor device having a novel and novel form that is completely different from the conventional one.

  The semiconductor device disclosed in this specification can be referred to as an oblique semiconductor device if it is evaluated from the classification of a conventional horizontal semiconductor device and a vertical semiconductor device. In the semiconductor device disclosed in this specification, the positional relationship between the pair of main electrodes is arranged in a direction inclined with respect to the vertical direction of the surface of the semiconductor substrate. For this reason, the electric field direction in the semiconductor substrate is formed in an oblique direction. In the semiconductor device disclosed in this specification, current flows in an oblique direction in the semiconductor substrate, and an applied voltage can be held in the oblique direction of the semiconductor substrate. As a result, according to the semiconductor device disclosed in this specification, both relaxation of current concentration and high breakdown voltage can be achieved.

A semiconductor device disclosed in this specification includes a first electrode electrically connected to one polarity of a voltage power source, a second electrode electrically connected to the other polarity of the voltage power source, and a semiconductor A first semiconductor region provided in the substrate and in direct contact with the first electrode; and a second semiconductor region provided in the semiconductor substrate and in direct contact with the second electrode. ing. In the semiconductor device disclosed in this specification, the direction connecting the first semiconductor region and the second semiconductor region is inclined with respect to the vertical direction of the surface of the semiconductor substrate. Here, “inclined” means a case where they are not orthogonal or parallel. In the conventional horizontal semiconductor device, the direction connecting the regions corresponding to the first semiconductor region and the second semiconductor region is orthogonal to the vertical direction of the surface of the semiconductor substrate. In the conventional vertical semiconductor device, the direction connecting the regions corresponding to the first semiconductor region and the second semiconductor region is parallel to the vertical direction of the surface of the semiconductor substrate. Therefore, the semiconductor device disclosed in this specification has a novel and novel form that is completely different from the conventional form.
In the semiconductor device of this embodiment, the electric field direction formed in the semiconductor substrate coincides with the direction connecting the first semiconductor region and the second semiconductor region, so the electric field direction in the semiconductor substrate is formed obliquely. For this reason, the current flows in the oblique direction in the semiconductor substrate, and the applied voltage can be held in the oblique direction of the semiconductor substrate. Since the current flows in an oblique direction in the semiconductor substrate, the current does not concentrate on the surface of the semiconductor substrate as in the horizontal semiconductor device. Further, since the applied voltage can be held in the oblique direction of the semiconductor substrate, the breakdown voltage can be improved without being limited by the thickness of the semiconductor substrate. According to the semiconductor device, both relaxation of current concentration and high breakdown voltage can be achieved.

In the semiconductor device disclosed in this specification, a semiconductor substrate includes a central region provided with a gate structure that switches between a conductive state and a non-conductive state, and a termination region provided around the central region. It is preferable to be at least partitioned. Furthermore, it is preferable that the first semiconductor region is disposed in the central region and the second semiconductor region is disposed in the termination region. Here, the “gate structure” means a structure having a gate electrode, and means a structure that can switch between a conductive state and a non-conductive state based on a voltage applied to the gate electrode. .
In both the conventional horizontal semiconductor device and vertical semiconductor device, both the first semiconductor region and the region corresponding to the second semiconductor region are arranged in the central region. The semiconductor device disclosed in this specification has a novel and novel form which is completely different from the conventional form.

In the semiconductor device disclosed in this specification, the first semiconductor region may be provided on the surface portion of the semiconductor substrate, and the second semiconductor region may be provided away from the surface of the semiconductor substrate. Here, the “surface portion” refers to a three-dimensional range including the surface of the semiconductor substrate.
According to the semiconductor device of this embodiment, the first semiconductor region is provided on the surface portion of the semiconductor substrate, and the second semiconductor region is not provided on the surface portion of the semiconductor substrate. That is, the first semiconductor region and the second semiconductor region are disposed along the oblique direction in the semiconductor substrate. The semiconductor device disclosed in this specification has a novel and novel form which is completely different from the conventional form.

When the second semiconductor region is provided away from the front surface of the semiconductor substrate, the second semiconductor region may be provided away from the back surface of the semiconductor substrate.
In the semiconductor device of this form, the second semiconductor region is provided inside the semiconductor substrate, and has a novel and novel form completely different from the conventional form.

When the second semiconductor region is provided inside the semiconductor substrate, the second electrode may be in direct contact with the second semiconductor region on the side surface of the semiconductor substrate.
Even if the second semiconductor region is provided inside, the electrical connection between the second semiconductor region and the second electrode can be realized on the side surface of the semiconductor substrate.

When the second electrode and the second semiconductor region are in contact with the side surface of the semiconductor substrate, it is preferable that an insulating film is provided on the side surface of the semiconductor substrate. In this case, it is preferable that the second electrode has a through electrode extending through the insulating film toward the second semiconductor region. The through electrode is in direct contact with the second semiconductor region on the side surface of the semiconductor substrate.
According to the semiconductor device of this aspect, the second electrode can be in direct contact with the second semiconductor region using the through electrode. On the other hand, the second electrode is insulated and separated from the side surface of the semiconductor substrate other than the second semiconductor region by an insulating film. The second electrode can selectively contact only the second semiconductor region on the side surface of the semiconductor substrate using the through electrode.

When the second semiconductor region is provided inside the semiconductor substrate, the second electrode may have a trench electrode extending from the surface of the semiconductor substrate toward the second semiconductor region. In this case, the trench electrode is in direct contact with the second semiconductor region. Further, the trench electrode is characterized in that it is insulated and separated from the semiconductor substrate by an insulating film except for a portion in contact with the second semiconductor region.
According to the above aspect, the second electrode can selectively contact only the second semiconductor region using the trench electrode inside the semiconductor substrate.

The semiconductor device disclosed in this specification is preferably provided in a semiconductor substrate, and further includes a third semiconductor region that is in direct contact with the first electrode. In this case, the direction connecting the third semiconductor region and the second semiconductor region is inclined with respect to the vertical direction of the surface of the semiconductor substrate. Further, the third semiconductor region is provided on the back surface portion of the semiconductor substrate. Here, the “back surface portion” refers to a three-dimensional range including the back surface of the semiconductor substrate.
According to the semiconductor device of the above aspect, a wide current conduction path can be secured in the semiconductor substrate. A semiconductor device with low on-resistance (or on-voltage) can be obtained.

  In the semiconductor device disclosed in this specification, the electric field direction in the semiconductor substrate is formed in an oblique direction. For this reason, the current flows in the oblique direction in the semiconductor substrate, and the applied voltage can be held in the oblique direction of the semiconductor substrate. As a result, according to the semiconductor device disclosed in this specification, both relaxation of current concentration and high breakdown voltage can be achieved.

Preferred features of the technology disclosed in this specification are listed.
(First feature)
The semiconductor device includes a diode, MOSFET, IGBT, UMOS, DMOS, trench IGBT, and the like.
(Second feature)
The termination pressure resistant structure includes a guard ring, a RESURF layer, and the like.

  Embodiments will be described below with reference to the drawings. In each of the following embodiments, an example in which silicon is used as a semiconductor material will be described. However, a semiconductor material such as silicon carbide, gallium arsenide, or gallium nitride may be used instead.

(First embodiment)
FIG. 1 schematically shows a cross-sectional view of the main part of the semiconductor device 10. The semiconductor device 10 is partitioned into a central region in which a gate structure is provided and a termination region provided around the central region. FIG. 1 shows the vicinity of the boundary between the center region and the termination region, and only a part of the center region on the termination region side is shown. The gate structure built in the central region is a structure for switching a current conduction state and a non-conduction state with time. The central region is partitioned on the center side of the semiconductor substrate 20. The termination region is partitioned around the semiconductor substrate 20 around the central region. The termination region bears the voltage applied to the semiconductor substrate in the lateral direction when the gate structure is turned off.

  The semiconductor device 10 includes an emitter electrode 76 (an example of a first electrode) that is electrically connected to the negative polarity of the DC power supply voltage, and a collector electrode 80 that is electrically connected to the positive polarity of the DC power supply voltage. (An example of a second electrode). The emitter electrode 76 is typically used while being grounded. A positive voltage of several hundred volts is applied to the collector electrode 31. Aluminum silicon (Al—Si) is used as the material of the emitter electrode 76. As the material of the collector electrode 31, a laminated electrode (Ti-Ni-Au) of titanium, nickel and gold is used.

The semiconductor device 10 includes a p ⁺ -type collector region 32 (an example of a second semiconductor region) provided on the back surface of the semiconductor substrate 20 and an n ⁺ -type buffer provided in contact with the surface of the collector region 32. Region 34. The collector region 32 is in direct contact with the collector electrode 80. The collector region 32 and the buffer region 34 are disposed in the termination region and are not disposed in the central region. The collector region 32 and the buffer region 34 can be formed using an ion implantation technique. Phosphorus is introduced into the collector region 32, and boron is introduced into the buffer region 34.

  The semiconductor device 10 further includes an n-type drift region 36. The drift region 36 is provided over the entire semiconductor substrate 20 and is continuous from the central region to the termination region. The drift region 36 is a remaining portion when the above-described collector region 32 and buffer region 34 and various semiconductor regions to be described later are formed in the semiconductor substrate 20 by using an ion implantation technique. Phosphorus is introduced into the drift region 36. As shown in FIG. 1, the drift region 36 is not in direct contact with the collector electrode 80. A region of the drift region 36 in the rear surface of the semiconductor substrate 20 is covered with an insulating film, and the drift region 36 and the collector electrode 80 are insulated and separated by the insulating film.

The semiconductor device 10 includes a gate structure provided on the surface portion of the semiconductor substrate 20 in the central region. The gate structure includes a p-type body region 62, an n ⁺ -type emitter region 64 (an example of a first semiconductor region) and a p ⁺ -type contact region 66 that are selectively provided in the body region 62. And a trench gate electrode 74 that reaches the drift region 36 through the body region 62 and is covered with a gate insulating film 72. The emitter region 64 and the contact region 66 are in direct contact with the emitter electrode 76. The trench gate electrode 74 and the emitter electrode 76 are insulated and separated by an insulating film. Boron is introduced into the body region 62 and the contact region 66, and phosphorus is introduced into the emitter region 62. Polysilicon is used as the material of the trench gate electrode 74. Silicon oxide is used as the material of the gate insulating film 72.

The semiconductor device 10 includes a termination breakdown voltage structure on the surface portion of the semiconductor substrate 20 in the termination region. The terminal breakdown voltage structure includes a plurality of p-type guard rings 50 (50a, 50b, 50c) and an n ⁺ -type channel stopper region 42. In the semiconductor device 10, the case where the number of the guard rings 50 is three is illustrated, but the number of the guard rings 50 is not limited to this example.
The guard rings 50 are provided in a distributed manner on the surface portion of the drift region 36 in the termination region. The guard ring 50 extends from the surface of the semiconductor substrate 20 toward the deep part. The plurality of guard rings 50 are arranged from the center region side toward the peripheral edge side of the termination region at a predetermined interval. The guard ring 50 is formed around the central region along the terminal region when viewed in plan. The guard ring 50 is electrically connected to a guard ring electrode (not shown). The guard ring electrode is in a floating state. The guard ring 50 extends the depletion layer from the center region toward the periphery of the termination region when the gate structure in the center region is turned off.

  The channel stopper region 42 is formed on the surface portion of the drift region 36 at the periphery of the termination region. The channel stopper region 42 is formed around the central region along the periphery of the termination region when viewed in plan. The channel stopper region 42 is electrically connected to a channel stopper electrode (not shown). The channel stopper electrode is fixed at the same potential as the collector electrode. The channel stopper region 42 stabilizes the potential of the drift region 36 in the termination region.

Next, features of the semiconductor device 10 will be described.
When a positive voltage of several hundred volts is applied to the collector electrode 80, the emitter electrode 76 is grounded, and a positive voltage of several volts is applied to the trench gate electrode 74, it is inverted into the body region 62 facing the trench gate electrode 74. A layer is formed, and the semiconductor device 10 is turned on. When the semiconductor device 10 is turned on, electrons supplied from the emitter region 64 flow toward the collector region 32 via the inversion layer, the drift region 36, and the buffer region 34 in the body region 62. On the other hand, holes supplied from the collector region 32 flow toward the contact region 66 via the buffer region 34, the drift region 36, and the body region 62. Conductivity modulation in which a large amount of electrons and holes are present at high density occurs in the drift region 36, and the semiconductor device 10 operates at a low on-voltage.

  In the semiconductor device 10, the positional relationship between the emitter region 64 and the collector region 32 is arranged in a direction inclined with respect to the vertical direction of the surface of the semiconductor substrate 20. Since the direction of the electric field formed in the semiconductor substrate 20 coincides with the direction connecting the emitter region 64 and the collector region 32, the electric field direction in the semiconductor substrate 20 is inclined with respect to the vertical direction of the surface of the semiconductor substrate 20. Yes. That is, the electric field direction in the semiconductor substrate 20 is formed in an oblique direction. For this reason, the current flows in an oblique direction in the semiconductor substrate 20 from the emitter region 64 to the collector region 32. Since the current flows in the oblique direction in the semiconductor substrate 20, the current does not concentrate on the surface of the semiconductor substrate 20 as in the conventional horizontal semiconductor device.

Further, when the semiconductor device 10 is turned off, the voltage applied between the emitter region 64 and the collector region 32 is held in the oblique direction of the semiconductor substrate 20. Since the applied voltage can be held in the oblique direction of the semiconductor substrate 20, the breakdown voltage can be improved without being limited by the thickness of the semiconductor substrate 20. According to the semiconductor device 10, it is possible to achieve both relaxation of current concentration and high breakdown voltage.
In the semiconductor device 10, since the direction connecting the emitter region 64 and the collector region 32 with the shortest distance is inclined with respect to the vertical direction of the surface of the semiconductor substrate 20, the above-described effect can be obtained satisfactorily.

(Second embodiment)
FIG. 2 schematically shows a cross-sectional view of the main part of the semiconductor device 100. In addition, the same code | symbol is attached | subjected about the same component as the semiconductor device 10 of FIG. 1, and the description is abbreviate | omitted.
The semiconductor device 100 is characterized in that the collector region 132 and the buffer region 134 are separated from the back surface of the semiconductor substrate 20. In the semiconductor device 100, the collector region 132 and the buffer region 134 are provided inside the semiconductor substrate 20. The buffer region 134 covers the collector region 132 and separates the collector region 132 and the drift region 36. Silicon oxide is used as the material of the insulating film 188, and aluminum is used as the material of the collector electrode 180.

  The semiconductor device 100 includes an insulating film 188 provided on the side surface of the semiconductor substrate 20. The collector electrode 180 is also provided on the side surface of the semiconductor substrate 10. The collector electrode 180 includes a collector side electrode 184 that covers the side surface of the semiconductor substrate 20 via the insulating film 188, and a through electrode 182 that extends through the insulating film 188 toward the collector region 132. Yes. The through electrode 182 is in direct contact with the collector region 132 on the side surface of the semiconductor substrate 20. The collector electrode 180 is insulated and separated from the side surface of the semiconductor substrate 20 other than the collector region 132 by an insulating film 188. The collector electrode 180 is selectively in contact with only the collector region 132 using the through electrode 182 on the side surface of the semiconductor substrate 20.

  Also in the case of the semiconductor device 100, the positional relationship between the emitter region 64 and the collector region 132 is arranged in a direction inclined with respect to the vertical direction of the surface of the semiconductor substrate 20, and the direction of the electric field formed in the semiconductor substrate 20 is Inclined with respect to the vertical direction of the surface of the semiconductor substrate 20. For this reason, current flows in an oblique direction in the semiconductor substrate 20 from the emitter region 64 to the collector region 132. Further, when the semiconductor device 100 is turned off, the voltage applied between the emitter region 64 and the collector region 132 is held in the oblique direction of the semiconductor substrate 20, so that the breakdown voltage is improved without being limited by the thickness of the semiconductor substrate 20. Can do. In the case of the semiconductor device 100 as well, both relaxation of current concentration and high breakdown voltage can be achieved.

With reference to FIG. 3, an advantageous effect when the form of the semiconductor device 100 is adopted will be described. FIG. 3 shows an example in which semiconductor devices 100 a and 100 b having substantially the same quality as the semiconductor device 100 are mixedly mounted on one semiconductor substrate 20. The semiconductor devices 100a and 100b are provided in island regions in the semiconductor substrate 20 partitioned by the insulating separation layer 190, respectively. For the insulating isolation layer 190, silicon oxide, a p-type diffusion region, or the like is used. For the sake of clarity, the number of guard rings and some areas are omitted.
The difference between the semiconductor device 100a and the semiconductor device 100b is that the depth of the collector region 132a of the semiconductor device 100a in the semiconductor substrate 20 and the depth of the collector region 132b of the semiconductor device 100b in the semiconductor substrate 20 are different. For this reason, the distance between the emitter region and the collector region of the semiconductor device 100a is different from the distance between the emitter region and the collector region of the semiconductor device 100b. Therefore, the breakdown voltage of the semiconductor device 100a and the breakdown voltage of the semiconductor device 100b are different.

  As shown in FIG. 3, when the semiconductor device 100 is adopted, the semiconductor devices 100 a and 100 b having different breakdown voltages can be mounted in one semiconductor substrate 20. In the conventional vertical semiconductor device, since the breakdown voltage is limited by the thickness of the semiconductor substrate, the vertical semiconductor devices having different breakdown voltages cannot be mounted on one semiconductor substrate. On the other hand, when the semiconductor device 100 is employed, semiconductor devices having different breakdown voltages can be mixedly mounted on one semiconductor substrate. As a result, a semiconductor device that realizes various functions can be manufactured.

(Third embodiment)
FIG. 4 schematically shows a cross-sectional view of the main part of the semiconductor device 200. The semiconductor device 200 is a modification of the semiconductor device 100 of FIG. Constituent elements common to the semiconductor device 100 of FIG. 2 are denoted by the same reference numerals and description thereof is omitted.

  The collector electrode 280 of the semiconductor device 200 includes a trench electrode 282 extending from the surface of the semiconductor substrate 20 toward the collector region 132 and a collector surface electrode 284 provided on the surface of the semiconductor substrate 20. It is a feature. The trench electrode 282 is in direct contact with the collector region 132. Further, the trench electrode 282 is insulated and separated from the semiconductor substrate 20 by the insulating film 288 except for a portion in contact with the collector region 132. The collector electrode 280 selectively contacts only the collector region 132 using the trench electrode 282. Polysilicon is used as the material of the trench electrode 282, and silicon oxide is used as the material of the insulating film 288.

  Also in the case of the semiconductor device 200, the positional relationship between the emitter region 64 and the collector region 132 is arranged in a direction inclined with respect to the vertical direction of the surface of the semiconductor substrate 20, and the direction of the electric field formed in the semiconductor substrate 20 is Inclined with respect to the vertical direction of the surface of the semiconductor substrate 20. For this reason, current flows in an oblique direction in the semiconductor substrate 20 from the emitter region 64 to the collector region 132. Further, when the semiconductor device 200 is turned off, the voltage applied between the emitter region 64 and the collector region 132 is held in the oblique direction of the semiconductor substrate 20, so that the breakdown voltage is improved without being limited by the thickness of the semiconductor substrate 20. Can do. In the case of the semiconductor device 200 as well, both relaxation of current concentration and high breakdown voltage can be achieved.

(Fourth embodiment)
FIG. 5 schematically shows a cross-sectional view of the main part of the semiconductor device 300. The semiconductor device 300 is a modification of the semiconductor device 100 of FIG. Constituent elements common to the semiconductor device 100 of FIG. 2 are denoted by the same reference numerals and description thereof is omitted.

The semiconductor device 300 is characterized in that a second gate structure and a termination withstand voltage structure are provided on the back surface of the semiconductor substrate 20. The second gate structure and the termination withstand voltage structure have a shape in which the gate structure and the termination withstand voltage structure on the surface portion are vertically inverted.
Also in the gate structure provided on the back surface, the positional relationship between the emitter region 364 and the collector region 132 is arranged in a direction inclined with respect to the vertical direction of the surface of the semiconductor substrate 20. Therefore, the direction of the electric field formed in the semiconductor substrate 20 is inclined with respect to the direction perpendicular to the surface of the semiconductor substrate 20, and the current flows in the semiconductor substrate 20 from the emitter region 364 to the collector region 132 in an oblique direction. . Further, when the semiconductor device 200 is turned off, the voltage applied between the emitter region 364 and the collector region 132 is held in the oblique direction of the semiconductor substrate 20, so that the breakdown voltage is improved without being limited by the thickness of the semiconductor substrate 20. Can do. In the case of the semiconductor device 300 as well, both relaxation of current concentration and high breakdown voltage can be achieved.

  Further, in the case of the semiconductor device 300, a wide current conduction path can be secured in the semiconductor substrate 20. When the second gate structure and the termination breakdown voltage structure are provided on the back surface of the semiconductor substrate 20, the semiconductor device 300 with a low on-voltage can be obtained.

Specific examples of the present invention have been described in detail above, but these are merely examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples illustrated above.
The technical elements described in this specification or the drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the technology exemplified in this specification or the drawings can achieve a plurality of objects at the same time, and has technical usefulness by achieving one of the objects.

The principal part sectional drawing of the semiconductor device of 1st Example is typically shown. The principal part sectional drawing of the semiconductor device of 2nd Example is shown typically. The principal part perspective view which shows the advantageous characteristic of the semiconductor device of 2nd Example is typically shown. The principal part sectional drawing of the semiconductor device of 3rd Example is shown typically. Sectional drawing of the principal part of the semiconductor device of 4th Example is shown typically.

Explanation of symbols

20: Semiconductor substrate 32, 132: Collector region 34, 134: Buffer region 36: Drift region 42: Channel stopper region 50, 350: Guard ring 62, 362: Body region 64, 364: Emitter region 66, 366: Contact region 72 372: Gate insulating film 74, 374: Trench gate electrode 76, 376: Emitter electrode 80, 180: Collector electrode 182: Through electrode 282: Trench electrode

Claims (8)

A semiconductor device,
A first electrode electrically connected to one polarity of the voltage source;
A second electrode electrically connected to the other polarity of the voltage source;
A first semiconductor region provided in the semiconductor substrate and in direct contact with the first electrode;
A second semiconductor region provided in the semiconductor substrate and in direct contact with the second electrode,
A semiconductor device in which a direction connecting the first semiconductor region and the second semiconductor region is inclined with respect to a direction perpendicular to the surface of the semiconductor substrate. The semiconductor substrate is at least partitioned into a central region provided with a gate structure that switches between a conductive state and a non-conductive state, and a termination region provided around the central region,
The first semiconductor region is disposed in the central region,
The semiconductor device according to claim 1, wherein the second semiconductor region is disposed in the termination region. The first semiconductor region is provided on the surface portion of the semiconductor substrate,
The semiconductor device according to claim 1, wherein the second semiconductor region is provided away from the surface of the semiconductor substrate.   4. The semiconductor device according to claim 3, wherein the second semiconductor region is provided away from the back surface of the semiconductor substrate.   The semiconductor device according to claim 4, wherein the second electrode is in direct contact with the second semiconductor region on a side surface of the semiconductor substrate. It further comprises an insulating film provided on the side surface of the semiconductor substrate,
The second electrode has a through electrode extending through the insulating film toward the second semiconductor region,
6. The semiconductor device according to claim 5, wherein the through electrode is in direct contact with the second semiconductor region on a side surface of the semiconductor substrate. The second electrode has a trench electrode extending from the surface of the semiconductor substrate toward the second semiconductor region,
The trench electrode is in direct contact with the second semiconductor region,
5. The semiconductor device according to claim 4, wherein the trench electrode is insulated and separated from the semiconductor substrate by an insulating film except for a portion in contact with the second semiconductor region. A third semiconductor region provided in the semiconductor substrate and in direct contact with the first electrode;
The direction connecting the third semiconductor region and the second semiconductor region is inclined with respect to the vertical direction of the surface of the semiconductor substrate,
The semiconductor device according to claim 4, wherein the third semiconductor region is provided on a back surface portion of the semiconductor substrate.

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