JP2008283062A - Module structure of semiconductor element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a module structure of a semiconductor element which can enhance the dimensional accuracy of a thickness direction. <P>SOLUTION: The module structure is provided with: an upper electrode 1040 and a lower electrode 1030 which are opposed to each other; an inverter 820 arranged between the upper electrode 1040 and the lower electrode 1030; a first comb-like ceramic spacer 1010 and a second comb-like ceramic spacer 1020 arranged between the upper electrode 1040 and the lower electrode 1030 to form a gap between the upper electrode 1040 and the lower electrode 1030; and sealing resin 1050 which fills the gap between the upper electrode 1040 and the lower electrode 1030 and penetrates the teeth. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a module structure of a semiconductor element, and more particularly to a module structure of a semiconductor element that can improve dimensional accuracy in the thickness direction.

Conventionally, the module structure of a semiconductor element is disclosed in, for example, Japanese Patent Application Laid-Open No. 2005-123233 (Patent Document 1), Japanese Patent Application Laid-Open No. 2006-13080 (Patent Document 2), Japanese Patent Application Laid-Open No. 5-335478 (Patent Document 3), and the like. Japanese Unexamined Patent Application Publication No. 2006-165534 (Patent Document 4) and Japanese Patent Application Laid-Open No. 6-21278 (Patent Document 5).
JP 2005-123233 A JP 2006-13080 A JP-A-5-335478 JP 2006-165534 A JP-A-6-21278

  The conventional technique has a problem that the accuracy in the thickness direction of the module structure of the semiconductor element cannot be increased.

  Accordingly, the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor element module structure capable of increasing the accuracy in the thickness direction in the semiconductor element module structure. And

  A module structure of a semiconductor device according to the present invention includes a first and second electrodes disposed so as to face each other, a semiconductor device disposed between the first and second electrodes, and between the first and second electrodes. And a comb-like insulating spacer that forms a gap between the first and second electrodes, and a sealing resin that fills the gap between the first and second electrodes and enters between the comb teeth.

  In the module structure of the semiconductor element thus configured, the insulating spacer can increase the positioning accuracy in the thickness direction between the first and second electrodes. In addition, the shape of the insulating spacer is comb-shaped in order to make the thickness of the sealing resin uniform. As a result, the dimensional accuracy in the thickness direction can be improved.

  Preferably, at least a part of the first and second electrodes is provided with an uneven portion toward the resin, and the sealing resin is filled along the uneven portion.

Preferably, a convex portion is provided immediately above the semiconductor element.
Preferably, the module structure of the semiconductor element further includes solder for connecting the first and second electrodes and the semiconductor element. An electrode connected by solder is provided with a solder level adjusting hole penetrating the electrode in the thickness direction.

  Embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated. In addition, the embodiments can be combined.

(Embodiment 1)
FIG. 1 is a diagram schematically showing an example of the structure of a drive unit including a heating element according to an embodiment of the present invention. In the example shown in FIG. 1, the drive unit 1 is a drive unit mounted on a hybrid vehicle, and includes a motor generator 100, a resolver 200, a speed reduction mechanism 300, a differential mechanism 400, a drive shaft receiving portion 500, A housing 600 and a terminal block 700 are included.

  The motor generator 100 is a rotating electric machine that functions as an electric motor or a generator. The motor generator 100 is a rotary shaft 110 that is rotatably attached to the housing 600 via a bearing 120, a rotor 130 that is attached to the rotary shaft 110, and a stator 140. And have.

  The rotor 130 includes a rotor core configured by laminating plate-like magnetic bodies such as iron or an iron alloy, and a permanent magnet embedded in the rotor core. For example, the permanent magnets are arranged at substantially equal intervals in the vicinity of the outer periphery of the rotor core.

  The stator 140 includes a ring-shaped stator core 141, a stator coil 142 wound around the stator core 141, and a bus bar 143 connected to the stator coil 142. The bus bar 143 is connected to a PCU (Power Control Unit) 800 via a terminal block 700 provided in the housing 600 and a power supply cable 800A. PCU 800 is connected to battery 900 via power supply cable 900A. Thereby, battery 900 and stator coil 142 are electrically connected.

  The stator core 141 is configured by laminating plate-like magnetic bodies such as iron or iron alloy. A plurality of teeth portions (not shown) and slot portions (not shown) as recesses formed between the teeth portions are formed on the inner peripheral surface of the stator core 141. The slot portion is provided so as to open to the inner peripheral side of the stator core 141.

  Stator coil 142 including three winding phases, U-phase, V-phase, and W-phase, is wound around the tooth portion so as to fit into the slot portion. The U phase, V phase, and W phase of the stator coil 142 are wound so as to deviate from each other on the circumference. Bus bar 143 includes a U phase, a V phase, and a W phase corresponding to the U phase, V phase, and W phase of stator coil 142, respectively.

  The power feeding cable 800A is a three-phase cable including a U-phase cable, a V-phase cable, and a W-phase cable. U-phase, V-phase, and W-phase of bus bar 143 are connected to U-phase cable, V-phase cable, and W-phase cable in power supply cable 800A, respectively.

  The power output from the motor generator 100 is transmitted from the speed reduction mechanism 300 to the drive shaft receiving portion 500 via the differential mechanism 400. The driving force transmitted to the drive shaft receiving portion 500 is transmitted as a rotational force to wheels (not shown) via a drive shaft (not shown), thereby causing the vehicle to travel.

  On the other hand, during regenerative braking of the hybrid vehicle, the wheels are rotated by the inertial force of the vehicle body. Motor generator 100 is driven via drive shaft receiving portion 500, differential mechanism 400 and reduction mechanism 300 by the rotational force from the wheels. At this time, the motor generator 100 acts as a generator. The electric power generated by motor generator 100 is stored in battery 900 via an inverter in PCU 800.

  The resolver 200 includes a resolver rotor 210 and a resolver stator 220. Resolver rotor 210 is connected to rotating shaft 110 of motor generator 100. The resolver stator 220 includes a resolver stator core 221 and a resolver stator coil 222 wound around the core. The resolver 200 detects the rotation angle of the rotor 130 of the motor generator 100. The detected rotation angle is transmitted to the PCU 800 via the connector 10. PCU 800 generates a drive signal for driving motor generator 100 using the detected rotation angle of rotor 130 and a torque command value from an external ECU (Electrical Control Unit), and uses the generated drive signal as a motor. Output to the generator 100.

  FIG. 2 is a circuit diagram showing a configuration of a main part of PCU 800. Referring to FIG. 2, PCU 800 includes a converter 810, an inverter 820, a control device 830, capacitors C1, C2, power supply lines PL1, PL3, and output lines 840U, 840V, 840W. Converter 810 is connected between battery 900 and inverter 820, and inverter 820 is connected to motor generator 100 via output lines 840U, 840V, and 840W.

  Battery 900 connected to converter 810 is, for example, a secondary battery such as nickel metal hydride or lithium ion.

  Battery 900 supplies the generated DC voltage to converter 810 and is charged by the DC voltage received from converter 810.

  Converter 810 includes power transistors Q1 and Q2, diodes D1 and D2, and a reactor L. Power transistors Q1, Q2 are connected in series between power supply lines PL2, PL3, and receive a signal from control device 830 as a base. Diodes D1 and D2 are connected between the collector and emitter of power transistors Q1 and Q2, respectively, so that current flows from the emitter side to the collector side of power transistors Q1 and Q2. Reactor L has one end connected to power supply line PL1 connected to the positive electrode of battery 900, and the other end connected to a connection point of power transistors Q1 and Q2.

  Converter 810 boosts the DC voltage received from battery 900 using reactor L, and supplies the boosted boosted voltage to power supply line PL2. Converter 810 steps down the DC voltage received from inverter 820 and charges battery 900.

  Inverter 820 includes a U-phase arm 850U, a V-phase arm 850V, and a W-phase arm 850W. Each phase arm is connected in parallel between power supply lines PL2 and PL3. U-phase arm 850U includes power transistors Q3 and Q4 connected in series, V-phase arm 850V includes power transistors Q5 and Q6 connected in series, and W-phase arm 850W includes power transistors connected in series. It consists of transistors Q7 and Q8. Diodes D3 to D8 are respectively connected between the collector and emitter of power transistors Q3 to Q8 so that current flows from the emitter side to the collector side of power transistors Q3 to Q8. A connection point of each power transistor in each phase arm is connected to an anti-neutral point side of each phase coil of motor generator 100 via output lines 840U, 840V, and 840W.

  Inverter 820 converts a DC voltage received from power supply line PL <b> 2 into an AC voltage based on a control signal from control device 830, and outputs the AC voltage to motor generator 100. Inverter 820 rectifies the AC voltage generated by motor generator 100 into a DC voltage and supplies it to power line PL2.

  Capacitor C1 is connected between power supply lines PL1 and PL3, and smoothes the voltage level of power supply line PL1. Capacitor C2 is connected between power supply lines PL2 and PL3, and smoothes the voltage level of power supply line PL2.

  Resolver 200 detects the rotation angle of the rotor of motor generator 100 and outputs it to control device 830. Here, the output to the control device 830 is performed via the wirings 13 and 14 and the connector 10.

  Control device 830 calculates the rotation angle of the rotor of motor generator 100 based on the motor torque command value, each phase current value of motor generator 100, and the input voltage of inverter 820, and each phase coil voltage of motor generator 100. Based on the calculation result, a PWM (Pulse Width Modulation) signal for turning on / off the power transistors Q3 to Q8 is generated and output to the inverter 820.

  Control device 830 calculates the duty ratio of power transistors Q1 and Q2 for optimizing the input voltage of inverter 820 based on the motor torque command value and the motor rotation speed described above, and power based on the calculation result. A PWM signal for turning on / off the transistors Q 1 and Q 2 is generated and output to the converter 810.

  Further, control device 830 controls the switching operation of power transistors Q <b> 1 to Q <b> 8 in converter 810 and inverter 820 in order to charge battery 900 by converting AC power generated by motor generator 100 to DC power.

  In CPU 800, converter 810 boosts a DC voltage received from battery 800 based on a control signal from control device 830, and supplies the boosted voltage to power supply line PL2. Inverter 820 receives the DC voltage smoothed by capacitor C <b> 2 from power supply line PL <b> 2, converts the received DC voltage into an AC voltage, and outputs it to motor generator 100.

  Inverter 820 converts the AC voltage generated by the regenerative operation of motor generator 100 into a DC voltage and outputs the DC voltage to power supply line PL2. Converter 810 receives the DC voltage smoothed by capacitor C2 from power supply line PL2, and steps down the received DC voltage to charge battery 900.

  In such a circuit, since the converter 810, the inverter 820, the capacitors C1 and C2, and the like are heating elements, it is necessary to cool the heating elements.

  FIG. 3 is a cross-sectional view of the module structure of the semiconductor device according to the present invention. Referring to FIG. 3, a module structure 1000 of a semiconductor element is arranged between an upper electrode 1040 and a lower electrode 1030 as first and second electrodes arranged so as to face each other, and between the upper electrode 1040 and the lower electrode 1030. First as a comb-shaped insulating spacer that forms a gap between the upper electrode 1040 and the lower electrode 1030 and is interposed between the inverter 820 as a semiconductor element (power element) and the upper electrode 1040 and the lower electrode 1030 A ceramic spacer 1010 and a second ceramic spacer 1020, and a sealing resin 1050 that fills a gap between the upper electrode 1040 and the lower electrode 1030 and enters between the comb teeth are provided. Inverter 820 may be replaced with converter 810 or capacitors C1 and C2.

  Concave portions 1047, 1048, 1049 and convex portions 1042, 1043 are arranged on the upper electrode 1040 toward the inverter 820. A sealing resin 1050 is filled along the unevenness. Protrusions 1042 and 1043 are provided immediately above the inverter 820. Solder 1070 for connecting the inverter 820 and the upper electrode 1040 is provided, and the upper electrode 1040 is provided with a solder level adjusting hole 1041 for adjusting the solder 1070. The solder level adjusting hole 1041 penetrates the upper electrode 1040 in the thickness direction.

  Upper electrode 1040 and lower electrode 1030 are made of a conductor such as metal, for example. Specifically, it is made of copper or aluminum having a low electric resistance. The upper electrode 1040 and the lower electrode 1030 are electrodes for supplying electric power to the inverter 820 as a power element. The upper electrode 1040 is provided with concave portions 1047, 1048, 1049 and convex portions 1042, 1043 therebetween. Such unevenness may be provided not only on the upper electrode 1040 but also on the lower electrode 1030. Further, the upper electrode 1040 and the lower electrode 1030 may not be provided with unevenness.

  A gap between the upper electrode 1040 and the lower electrode 1030 is held by the first ceramic spacer 1010 and the second ceramic spacer 1020. Both the first ceramic spacer 1010 and the second ceramic spacer 1020 are in contact with the upper electrode 1040 and the lower electrode 1030. The first ceramic spacer 1010 and the second ceramic spacer 1020 do not necessarily need to be ceramics, and can be made of, for example, another organic material having insulating properties.

  Both the first ceramic spacer 1010 and the second ceramic spacer 1020 have core portions 1013 and 1023 and comb teeth portions 1011 and 1021 protruding from the core portions 1013 and 1023 in the vertical direction. Concave portions 1012 and 1022 are between the plurality of comb-tooth portions 1011 and 1021. The sealing resin 1050 has entered the recesses 1012 and 1022, and the sealing resin 1050 is in close contact with the first ceramic spacer 1010 and the second ceramic spacer 1020.

  Solder 1060 and 1070 are in contact with lower electrode 1030 and upper electrode 1040. The solders 1060 and 1070 serve to electrically connect the upper electrode 1040 and the lower electrode 1030 to the inverter 820 as a semiconductor element and to position the inverter 820. Electrodes 1080 and 1090 are provided on the upper and lower surfaces of the inverter 820 as a power element, and solders 1060 and 1070 are in contact with the electrodes 1080 and 1090.

  In this embodiment, a solder level adjusting hole 1041 for adjusting the level of the solder 1070 is provided on the upper electrode 1040 side. That is, the structure of the double-sided cooling IGBT module in which the first and second ceramic spacers 1010 and 1020 and the upper electrode 1040 and lower electrode 1030 made of copper are devised to improve the dimensional accuracy in the thickness direction and to improve the reliability against thermal stress. Can provide.

  The first ceramic spacer 1010 and the second ceramic spacer 1020 increase the positioning accuracy in the thickness direction between the upper electrode 1040 and the lower electrode 1030. Further, the sealing resin 1050 has a comb-teeth shape in order to make the thickness uniform. Further, a solder level adjusting hole 1041 is provided in the element connecting portion of the upper electrode 1040. Thus, a constant solder fillet shape can be obtained regardless of the element thickness and the amount of solder.

  The thickness of the upper electrode 1040 immediately above the inverter 820 is appropriately increased while ensuring an insulation distance, and a good heat dissipation effect is obtained.

  Thereby, the thickness of the sealing resin 1050 is made uniform. In addition, the heat dissipation level is increased. Furthermore, the durability against heat stress is greatly improved by homogenizing the solder fillet shape. Further, the dimensional accuracy in the thickness direction of the module structure 1000 of the semiconductor element is improved, and the heat transfer performance to the cooler is improved.

  In the IGBT (Insulated Gate Bipolar Transistor) module structure constituting the inverter 820, the upper and lower elements are positioned by the first and second ceramic spacers 1010 and 1020. Since a hollow portion between the upper and lower sides is generated, a heat-resistant sealing resin 1050 is enclosed for strengthening positioning. The amount of heat generated by the IGBT is rapid and strong, and the encapsulated resin layer also has a different thickness. Therefore, as the element generates heat, unbalanced stress is generated at each edge portion of the resin layer. Become. Then, the module element and the resin are peeled off at a place where a strong thermal stress is generated, so that it does not play a role of positioning.

  In this invention, the first and second ceramic spacers are comb-shaped, and the thickness of the sealing resin 1050 is made uniform. Thereby, the thermal stress generated at the edge of the sealing resin 1050 is made uniform, dispersed, and weakened, thereby preventing peeling between the module element and the sealing resin 1050.

  In addition, since the first and second ceramic spacers are comb-shaped, it is possible to efficiently dissipate heat generated in the resin to the inside of the resin. Further, the upper and lower electrodes 1040 and 1030 may be provided with unevenness so as to have a heat sink function.

(Embodiment 2)
FIG. 4 is a cross-sectional view of a module structure of a semiconductor device according to the second embodiment of the present invention. Referring to FIG. 4, in semiconductor device module structure 1000 according to the second embodiment of the present invention, according to the first embodiment, solder level adjusting hole 1041 is not provided in upper electrode 1040. Different from the module structure 1000 of semiconductor elements. The module structure configured as described above has the same effect as that of the first embodiment.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a figure which shows roughly an example of the structure of the drive unit containing the heat generating element which concerns on one embodiment of this invention. It is a circuit diagram which shows the structure of the principal part of PCU800. It is sectional drawing of the module structure of the semiconductor element according to Embodiment 1 of this invention. It is sectional drawing of the module structure of the semiconductor element according to Embodiment 2 of this invention.

Explanation of symbols

  820 Inverter, 1000 Module structure of semiconductor element, 1010 1st ceramic spacer, 1011, 1021 Comb portion, 1030 Lower electrode, 1040 Upper electrode, 1041 Solder level adjustment hole, 1050 Sealing resin, 1060, 1070 Solder.

Claims (4)

First and second electrodes arranged to face each other;
A semiconductor element disposed between the first and second electrodes;
A comb-like insulating spacer interposed between the first and second electrodes to form a gap between the first and second electrodes;
A module structure of a semiconductor element, comprising: a sealing resin that fills a gap between the first and second electrodes and enters between the comb teeth.   2. The semiconductor element according to claim 1, wherein at least one of the first and second electrodes is provided with unevenness arranged toward the semiconductor element, and the sealing resin is filled along the unevenness part. Modular structure.   The module structure of the semiconductor element according to claim 2, wherein the convex portion is provided immediately above the semiconductor element.   It further comprises solder for connecting any one of the first and second electrodes and the semiconductor element, and any one of the first and second electrodes penetrates the first and second electrodes to the solder. The module structure of the semiconductor element according to claim 1, wherein a solder level adjusting hole is provided.

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