JP2008277762A - Substrate processing apparatus and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a method for manufacturing a semiconductor device whereby foreign matter can be prevented from being adsorbed on the substrate, by suppressing agitation of foreign matter present in the processing chamber. <P>SOLUTION: The substrate processing apparatus includes: a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a semiconductor device manufacturing method.

  As a process of manufacturing a semiconductor device such as an LSI, for example, a substrate processing process for forming a thin film on a substrate to be processed such as a silicon wafer may be performed. In the substrate processing step of forming a thin film on the substrate, for example, a physical vapor deposition (PVD) method such as sputtering or a chemical vapor deposition (CVD) method using a chemical reaction may be performed. In general, the CVD method is widely practiced as a film forming method because it has advantages over the PVD method, including step coverage characteristics (step coverage characteristics).

The above-described substrate processing step is performed by, for example, a substrate processing apparatus including a processing chamber for processing a substrate. In recent years, with the miniaturization of wiring formed in a semiconductor device and the size reduction of the semiconductor device itself, particularly strict cleanliness is required for the substrate processing apparatus.
JP 2004-296820 A

  However, particles (foreign matter) adsorbed on the substrate to be processed may be brought into the processing chamber of the substrate processing apparatus as the substrate is carried into the processing chamber. In addition, foreign matter may be adsorbed on the structure constituting the substrate processing apparatus, or foreign matter may be generated from the structure.

  In addition, by-products accumulated in the processing chamber along with the substrate processing may become foreign matters. In particular, in a substrate processing step of forming a thin film on a substrate, a film is likely to be formed on the inner wall of the processing chamber or a member in the processing chamber, and foreign matter is often generated by peeling off the film for some reason. In particular, in the CVD method, film formation is performed depending on temperature conditions. Therefore, when the temperature conditions are satisfied, a film that causes foreign matter also in a place other than the substrate (for example, the inner wall of the processing chamber or a member in the processing chamber). Is easily formed. In addition, when the CVD method is performed, foreign matter may be generated due to a gas phase reaction of a gas introduced into the processing chamber.

  In some cases, the foreign matter in the processing chamber is agitated during the substrate processing, scattered in the processing chamber, and adsorbed on the substrate to be processed. A semiconductor device manufactured on the basis of a substrate on which foreign matter is adsorbed may impair the performance, shorten the life, or deteriorate the production yield.

  Accordingly, in view of the above-described problems, the present invention provides a substrate processing apparatus and a method for manufacturing a semiconductor device that can suppress the adsorption of foreign matters to a substrate by suppressing the stirring of foreign matters generated in the processing chamber. The purpose is to do.

According to one aspect of the present invention, a processing chamber for processing a substrate, a processing gas supply line for supplying a processing gas into the processing chamber, an inert gas supply line for supplying an inert gas into the processing chamber, An inert gas vent line provided in the inert gas supply line for exhausting the inert gas supplied to the inert gas supply line without supplying it into the processing chamber, and the inert gas vent of the inert gas supply line There is provided a substrate processing apparatus having a first valve provided downstream from a portion provided with a line, a second valve provided in the inert gas vent line, and an exhaust line for exhausting the processing chamber. The

  According to another aspect of the present invention, the method includes a step of loading a substrate into a processing chamber, a step of processing the substrate in the processing chamber, and a step of unloading the processed substrate from the processing chamber, The step of processing the substrate includes a step of supplying a processing gas into the processing chamber from a processing gas supply line, and a step of supplying an inert gas into the processing chamber from an inert gas supply line. In the step of supplying the inert gas, the inert gas supplied to the inert gas supply line is exhausted from an inert gas vent line provided in the inert gas supply line without being supplied into the processing chamber. In the step of supplying the inert gas, the flow of the inert gas supplied to the inert gas supply line is switched from the flow toward the inert gas vent line to the flow toward the processing chamber. The method of manufacturing a semiconductor device obtaining is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the substrate processing apparatus which can suppress adsorption | suction of the foreign material to a board | substrate, and a semiconductor device can be provided by suppressing stirring of the foreign material which generate | occur | produced in the process chamber.

  As described above, conventionally, in a substrate processing step of forming a thin film on a substrate, a film is easily formed not only on a substrate to be processed but also on an inner wall of a processing chamber or a member in the processing chamber, and this film is peeled off for some reason. In many cases, foreign matter was generated. In particular, in the CVD method, when the temperature condition is satisfied, a film that causes foreign matters is easily formed in a place other than the substrate. As described above, conventionally, foreign substances in the processing chamber may be agitated during the substrate processing, scattered in the processing chamber, and adsorbed to the substrate to be processed. As a result, the performance of the semiconductor device manufactured based on the substrate on which foreign matter is adsorbed may be impaired, the life may be shortened, or the production yield may be deteriorated.

  Accordingly, the inventors have conducted intensive research on the cause of the stirring of foreign matter in the processing chamber. As a result, it has been found that the pressure fluctuation in the processing chamber during the substrate processing step is one of the factors that cause the foreign matter generated in the processing chamber to be agitated and attracted to the substrate to be processed. The inventors obtained knowledge that it is effective to suppress the occurrence of pressure fluctuations in the processing chamber during the substrate processing step in order to suppress stirring of the foreign matter generated in the processing chamber, The present invention has been completed. An embodiment of the present invention will be described below with reference to the drawings.

1. First Embodiment of the Present Invention Hereinafter, a configuration of a processing furnace 202 of a substrate processing apparatus as a first embodiment of the present invention and a process for manufacturing a semiconductor device (device) will be performed by the processing furnace 202. Examples of the substrate processing step performed and the cycle processing performed in the substrate processing step will be sequentially described.
(1) Configuration of Processing Furnace First, the configuration of the processing furnace 202 of the substrate processing apparatus as the first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a schematic view showing an example of a processing furnace of a single wafer MOCVD apparatus which is a substrate processing apparatus according to a first embodiment of the present invention.

<Processing container>
The processing furnace 202 according to this embodiment includes a processing container 201. The processing container 201 is composed of a metal container such as aluminum (Al) or stainless steel (SUS). A processing chamber 203 for processing the substrate 200 is formed inside the processing container 201. Here, examples of the substrate 200 include a semiconductor silicon wafer, a compound semiconductor wafer, and a glass substrate.

<Substrate transfer port>
A substrate transfer port 247 through which the substrate 200 is carried into and out of the processing chamber 203 is provided below the processing chamber side wall 203a. The substrate transfer port 247 is configured to be opened and closed by a gate valve 244 as a gate valve. The substrate transfer port 247 is configured so that the gas tightness in the processing chamber 203 can be maintained by closing the gate valve 244.

<Substrate holding means>
A hollow heater unit 206 is provided inside the processing chamber 203. The upper opening of the heater unit 206 is covered with a susceptor 6 as a substrate holding means (holding plate). Inside the heater unit 206, a heater 207 as a heating means (heating mechanism) is provided. The substrate 207 placed on the susceptor 6 can be heated by the heater 207. The heater 207 is controlled by a temperature controller 253 as temperature control means (temperature controller) so that the temperature of the substrate 200 becomes a predetermined temperature. Further, the heater unit 206 may be integrally formed with the heater 207 as long as the substrate 200 can be heated.

  The lower part of the heater unit 206 is provided so as to penetrate the bottom of the processing container 201 while maintaining airtightness in the processing chamber 201. The lower end portion of the heater unit 206 is supported from below by a rotation mechanism 267 as a rotation means. Therefore, by operating the rotation mechanism 267, the heater unit 206 in the processing chamber 203 is rotated, and the substrate 200 on the susceptor 6 can be rotated. The reason for rotating the substrate 200 is to perform processing on the substrate 200 in a process gas supply process (a raw material gas supply process or an activation gas supply process) to be described later quickly and uniformly in the plane of the substrate 200. If desired uniformity can be obtained without rotation of the substrate 200, the installation of the rotating means can be omitted.

  A lifting mechanism 266 is provided below the rotating mechanism 267. The lifting mechanism 266 supports the rotating mechanism 267 from below. By operating the elevating mechanism 266, the rotating mechanism 267 and the heater unit 206 are moved up and down, and the substrate 200 on the susceptor 6 can be moved up and down in the processing chamber 203. For example, when the substrate 200 is carried in and out of the processing chamber 203, the heater unit 206 moves (lowers) to a lower substrate transfer position in the processing chamber 203. When performing substrate processing such as film formation on the substrate 200, the heater unit 206 moves (rises) to a substrate processing position above the substrate transfer position.

<First processing gas supply line (raw material gas supply line)>
Outside the processing chamber 203, a film forming raw material supply unit 250a for supplying an organic liquid raw material (MO (Metal Organic) raw material) as a film forming raw material that is a source of the raw material gas as the first processing gas, A liquid mass flow controller 241a serving as a flow rate control unit (liquid flow rate controller) for controlling the liquid supply flow rate of the film material and a vaporizer 255 for vaporizing the film material are provided.

  The film forming raw material supply unit 250a, the liquid mass flow controller 241a, and the vaporizer 255 are connected in series by a raw material gas supply pipe 1a as a first processing gas supply line (raw material gas supply line). A raw material gas can be obtained by supplying an organic liquid raw material (MO raw material) from the film forming raw material supply unit 250a to the vaporizer 255 via the mass flow controller 241a and vaporizing the organic liquid raw material in the vaporizer 255. .

The downstream side of the vaporizer 255 is connected by a source gas supply pipe 1a to a shower head 236, which will be described later, provided at the upper part of the processing chamber 203. A valve 243a is provided between the vaporizer 255 of the source gas supply pipe 1a and the shower head 236, and the introduction (supply) of the source gas into the processing chamber 203 is controlled by opening and closing the valve 243a. Is possible. When introducing the source gas into the processing chamber 203, an inert gas such as N ₂ gas may be used as the carrier gas. The raw material gas is used in the raw material gas supply step described later.

<Inert gas supply line>
Outside the processing chamber 203, an inert gas supply unit 250e for supplying an inert gas as a non-reactive gas, and a mass flow controller 241e as a flow rate control means (flow rate controller) for controlling the supply flow rate of the inert gas. And are provided. For example, Ar, He, N ₂ or the like is used as the inert gas.

  The inert gas supply unit 250e and the mass flow controller 241e are connected in series by an inert gas supply pipe 2a serving as an inert gas supply line.

  Further, the downstream side of the mass flow controller 241e is connected to the shower head 236 above the processing chamber 203 by an inert gas supply pipe 2a. A valve 243e is provided between the mass flow controller 241e of the inert gas supply pipe 2a and the shower head 236, and the introduction (supply) of the inert gas into the processing chamber 203 is controlled by opening and closing the valve 243e. It is possible to do. Note that the inert gas is used in a purge step described later.

<Reaction gas supply line>
Outside the processing chamber 203, a reaction gas supply unit 250b that supplies a reaction gas that is a source of the activation gas as the second processing gas, and a flow rate control unit (flow rate controller) that controls the supply flow rate of the reaction gas. ) And an activation mechanism 9 as an activating means for activating the reaction gas.

As the reactive gas, for example, a gas containing O element such as oxygen or ozone is used as an oxidizing agent that reacts with the raw material gas. In rare cases, when it is desired to remove impurities in the film such as C (carbon) without oxidizing the formed film, such as wiring, a reducing agent such as NH ₃ or H ₂ is used as a reaction gas. There is a case.

  The reactive gas supply unit 250b, the mass flow controller 241b, and the activation mechanism 9 are connected in series by the reactive gas supply pipe 3a. A valve 243b is provided between the mass flow controller 241b and the activation mechanism 9, and the introduction (supply) of the reaction gas to the activation mechanism 9 can be controlled by opening and closing the valve 243b. It has become.

The activation mechanism 9 is configured as, for example, a remote plasma unit that activates a reactive gas with plasma, an ozonizer that generates ozone, or the like. For example, when the activation mechanism 9 is configured as a remote plasma unit, an Ar gas supply unit 250c that supplies Ar gas, which is a plasma ignition gas for generating plasma, upstream of the activation mechanism 9, And a mass flow controller 241c as a flow rate control means for controlling the supply flow rate of Ar gas. The Ar gas supply unit 250c and the mass flow controller 241c are connected in series by an Ar gas supply pipe 3d as an Ar gas supply line. The downstream side of the mass flow controller 241c is connected to the downstream side of the valve 243b of the reaction gas supply pipe 3a (that is, between the valve 243b and the activation mechanism 9) by the Ar gas supply pipe 3d. A valve 243c is provided between the mass flow controller 241c of the Ar gas supply pipe 3d and the activation mechanism 9, and the Ar gas is introduced (supplied) into the activation mechanism 9 by opening and closing the valve 243c. Can be controlled.

Ar gas is supplied from the Ar gas supply unit 250c to the activation mechanism 9 via the mass flow controller 241c, Ar plasma is generated by the activation mechanism 9, and the activation mechanism from the reaction gas supply unit 250b via the mass flow controller 241b. 9 is supplied with an oxidant such as oxygen gas (O ₂ ) as a reactive gas, and the reactive gas is activated by Ar plasma generated in the activation mechanism 9, whereby oxygen radicals or the like are activated in the activation mechanism 9. An activated gas containing can be obtained. When the activation mechanism 9 is configured as an ozonizer, the activation mechanism 9 is activated by supplying O ₂ from the reaction gas supply unit 250b to the activation mechanism 9 via the mass flow controller 241b. Gas can be obtained. In addition, the activated gas which activated the reactive gas is used in the activated gas supply process mentioned later.

<Second Process Gas Supply Line (Activation Gas Supply Line)>
The downstream side of the activation mechanism 9 is connected to a shower head 236 above the processing chamber 203 by an activation gas supply pipe 3c as a second processing gas supply line (activation gas supply line). The activated gas supply pipe 3c is provided with a valve 243f. By opening and closing the valve 243f, it is possible to control the introduction of the activated gas containing oxygen radicals and ozone into the processing chamber 203. ing. Note that an activated gas containing oxygen radicals, ozone, and the like is used in an activated gas supply process described later.

<Shower head>
A shower head 236 is provided in the upper portion of the processing chamber 203. The shower head 236 includes a dispersion plate 236b provided with a plurality of ventilation holes (through holes) 240b and a shower plate 236a provided with a plurality of ventilation holes (through holes) 240a. Dispersion plate 236b faces the ceiling surface of shower head 236, that is, the inlet of source gas supply pipe 1a, the inlet of inert gas supply pipe 2a, and the inlet of activated gas supply pipe 3c. It is provided as follows. The shower plate 236a is provided on the downstream side of the dispersion plate 236b so as to face the dispersion plate 236b and to face the susceptor 6. A buffer space 237 is formed between the upper part (ceiling part) of the shower head 236 and the dispersion plate 236b, and a buffer space 238 is formed between the dispersion plate 236b and the shower plate 236a.

  The shower head 236 provided in the upper portion of the processing chamber 203 is provided with a raw material gas supply pipe 1a, an activated gas supply pipe 3c, and an inert gas supply pipe in a raw material gas supply process, an activation gas supply process, and a purge process, which will be described later. A supply port that distributes gas supplied from 2a to the processing chamber 203 and supplies gas uniformly to the substrate 200 at the substrate processing position is configured.

<Exhaust port>
An exhaust port 230 for exhausting the inside of the processing chamber 203 is provided below the processing chamber side wall 203 a and on the opposite side of the substrate transfer port 247. The exhaust port 230 is connected to an exhaust pump 8 serving as an exhaust device by an exhaust pipe 231 serving as an exhaust line. Between the exhaust port 230 and the exhaust pump 8, a pressure control means 7 such as an APC (Auto Pressure Controller) for controlling the pressure in the processing chamber 203 is installed. The downstream side of the exhaust pump 8 communicates with a detoxification device (not shown). An exhaust system is configured by the exhaust port 230 and the exhaust pipe 231.

<Rectifying plate>
A rectifying plate 205 is placed on the susceptor 6 as a substrate holding means (holding plate). An opening 205a for exposing the substrate 200 placed on the susceptor 6 is provided inside the current plate 205, and the current plate 205 has a ring shape. The gas supplied from the shower head 236 to the substrate 200 at the substrate processing position passes through the gap between the outer periphery of the rectifying plate 205 and the processing chamber side wall 203a and is exhausted from the exhaust port 230 to the outside of the processing chamber 203. Note that the distance between the outer peripheral portion of the rectifying plate 205 and the processing chamber side wall 203a is set such that the gas supplied from the shower head 236 is evenly supplied onto the substrate 200.

  Note that when there is a place where a film is not desired to be formed on the substrate 200, such as the outer peripheral portion of the substrate 200, the rectifying plate 205 may have a role of preventing film formation on the substrate 200. That is, the inner diameter of the opening 205a of the rectifying plate 205 is set small, and the outer peripheral portion of the substrate 200 is covered (masked) from above the substrate 200 with the inner portion of the rectifying plate 205 during film formation. Also good. In this case, since the substrate 200 is disposed between the susceptor 6 and the rectifying plate 205, for example, the rectifying plate 205 is fixed in advance to the height of the substrate processing position in the processing chamber 203 in order to enable substrate transfer. In addition, the susceptor 6 on which the substrate 200 is placed may be raised from below the rectifying plate 205. Alternatively, a mechanism for raising and lowering the rectifying plate 205 may be provided so that the rectifying plate 205 is lowered from above the substrate 200 placed on the susceptor 6.

<Bent line>
On the upstream side of the valve 243a of the raw material gas supply pipe 1a (that is, between the vaporizer 255 and the valve 243a), a raw material gas vent (bypass) pipe 1b is provided as a first processing gas vent line (raw material gas vent line). . The source gas vent pipe 1b is connected between the pressure control means 7 of the exhaust pipe 231 and the exhaust pump 8 through a valve 243g.

  An activated gas vent (bypass) pipe 3b serving as a second process gas vent line (reactive gas vent line) is provided upstream of the valve 243f of the activated gas supply pipe 3c (that is, between the activation mechanism 9 and the valve 243f). Is provided. The activated gas vent pipe 3b is connected between the pressure control means 7 of the exhaust pipe 231 and the exhaust pump 8 via a valve 243h.

<Controller>
The substrate processing apparatus includes substrate processing apparatuses such as valves 243a to 243h, mass flow controllers 241a to 241e, temperature controller 253, pressure control means 7, vaporizer 255, activation mechanism 9, rotation mechanism 267, and lifting mechanism 266. Is provided with a main controller 256 for controlling the operation of each part. The main controller 256 controls the opening and closing of the valve so as to repeat a material gas supply process, an activation gas supply process, and a purge process, which will be described later, a plurality of times.

(2) Substrate Processing Step Next, as a substrate processing step according to the first embodiment of the present invention, a procedure for depositing a thin film on the substrate 200 will be described with reference to FIG. In addition, the substrate processing process concerning 1st Embodiment is implemented by the processing furnace of the substrate processing apparatus mentioned above as 1 process of the manufacturing process of a semiconductor device. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the main controller 256.

<Board loading process>
First, the heater unit 206 shown in FIG. 1 is lowered to the substrate transfer position. Then, the gate valve 244 is opened and the substrate transfer port 247 is opened. Then, the substrate 200 is carried into the processing chamber 203 by the wafer transfer machine (S1).

<Substrate placement process>
Subsequently, the substrate 200 carried into the processing chamber 203 is placed on a push-up pin (not shown). Then, the gate valve 244 is closed to seal the inside of the processing chamber 203. Then, the heater unit 206 is raised to the substrate processing position above the substrate transfer position. As a result, the substrate 200 is pushed up and placed on the susceptor 6 from above the pins (S2).

<Temperature raising process>
Subsequently, while the substrate 200 is rotated by the substrate rotating unit, the electric power supplied to the heater 207 is controlled to uniformly heat the substrate 200 to a predetermined temperature (S3).

<Pressure adjustment process>
Simultaneously with the temperature raising step, the inside of the processing chamber 203 is evacuated by the exhaust pump 8, and the pressure control means 7 controls the inside of the processing chamber 203 to have a predetermined processing pressure (S4). When the substrate 200 is transported or heated, the valve 243e provided in the inert gas supply pipe 2a is opened, and exhaust gas is supplied while an inert gas such as Ar, He, N ₂ or the like is constantly flowing into the processing chamber 203. When exhausted from the tube 231, adhesion of particles (foreign matter) and metal contaminants to the substrate 200 can be prevented.

<Raw gas supply process>
When the temperature of the substrate 200 and the pressure in the processing chamber 203 reach a predetermined processing temperature and a predetermined processing pressure, respectively, and stabilize, the source gas as the first processing gas is supplied into the processing chamber 203 (S5). .

That is, an organic liquid source (MO source) as a film forming source that is a source of the source gas as the first processing gas is flow-controlled by the mass flow controller 241a from the film forming source supply unit 250a to the vaporizer 255. And the organic liquid raw material is vaporized by the vaporizer 255 to generate a raw material gas. Then, the valve 243 a provided in the source gas supply pipe 1 a is opened, and the source gas generated in the vaporizer 255 is supplied onto the substrate 200 via the shower head 236. At this time, the valve 243g provided in the source gas vent pipe 1b is closed. Further, when supplying the raw material gas into the processing chamber 203, the valve 243e is opened, and an inert gas (N ₂ or the like) is always supplied from the inert gas supply unit 250e, and the raw material gas supplied into the processing chamber 203 is supplied. Is allowed to stir. This is because the source gas is easily stirred when diluted with an inert gas.

  The source gas supplied from the source gas supply pipe 1a and the inert gas supplied from the inert gas supply pipe 2a are mixed in the buffer space 237 of the shower head 236, and a large number of holes provided in the dispersion plate 236b. It is guided to the buffer space 238 via 240b and supplied in a shower form onto the substrate 200 on the susceptor 6 via a number of holes 240a provided in the shower plate 236a. The mixed gas supplied onto the substrate 200 passes between the outer periphery of the rectifying plate 205 and the processing chamber side wall 203a, and is exhausted from the exhaust pipe 231 through the exhaust port 230. By supplying the mixed gas for a predetermined time, first, a thin film of about several to several tens of angstroms (several to several tens of atomic layers) is formed on the substrate 200. During this time, a uniform film can be formed over the surface of the substrate 200 by keeping the substrate 200 at a predetermined temperature (film formation temperature) by the heater 207 while rotating the substrate 200.

After supplying the source gas to the substrate 200 for a predetermined time, the valve 243a provided in the source gas supply pipe 1a is closed, and the supply of the source gas to the substrate 200 is stopped. At this time, the source gas is exhausted from the source gas vent pipe 1b so as to bypass the processing chamber 203 by opening the valve 243g provided in the source gas vent pipe 1b, and the source gas is supplied from the vaporizer 255. It is preferable not to stop (that is, generation of the raw material gas in the vaporizer 255). Although it takes time to vaporize the liquid raw material and stably supply the vaporized raw material gas, if the supply of the raw material gas from the vaporizer 255 is not stopped, the processing chamber 203 is allowed to flow. This is because the source gas can be immediately supplied to the substrate 200 by simply switching the flow in the next source gas supply step.

<Purge process>
The processing chamber 203 is purged by closing the valve 243a provided in the source gas supply pipe 1a (S6). That is, in the raw material gas supply process, the valve 243e is kept open, and the inert gas (N ₂ or the like) is always supplied from the inert gas supply pipe 2a into the processing chamber 203. Therefore, the valve 243a is closed. By stopping the supply of the source gas to the substrate 200, the purging of the processing chamber 203 is performed at the same time. The inert gas supplied into the processing chamber 203 passes between the outer periphery of the rectifying plate 205 and the processing chamber side wall 203a and is exhausted from the exhaust pipe 231 through the exhaust port 230. Thereby, the residual gas in the processing chamber 203 is removed.

<Activation gas supply process>
After performing the purge process for a predetermined time, an activation gas is supplied into the processing chamber 203 as a second processing gas (S7).

That is, first, the valve 243c provided in the Ar gas supply pipe 3d is opened, and Ar gas as plasma ignition gas is supplied from the Ar gas supply unit 250c to the activation mechanism 9 while controlling the flow rate by the mass flow controller 241c. Then, activation (plasma excitation) is performed by the activation mechanism 9 to generate Ar plasma. Subsequently, the valve 243b provided in the reaction gas supply pipe 3a is opened, and O ₂ gas as a reaction gas (oxidant) that is a source of the activation gas as the second process gas is supplied to the reaction gas supply unit 250b. To the activation mechanism 9 while controlling the flow rate by the mass flow controller 241b. Then, the Ar plasma generated by the activation mechanism 9 is used to activate the O ₂ gas as a reaction gas to obtain an activated gas containing oxygen radicals. Subsequently, the valve 243f provided in the activated gas supply pipe 3c is opened, the activated gas is supplied from the activation mechanism 9 into the processing chamber 203, and the activated gas is supplied onto the substrate 200 through the shower head 236. To do. At this time, the valve 243h provided in the activated gas vent pipe 3b is closed.

When ozone (O ₃ ) is to be obtained as the activation gas, the valve 243b provided in the reaction gas supply pipe 3a is opened, and oxygen gas as the reaction gas is supplied from the reaction gas supply unit 250b to the mass flow controller. Supplying to the activation mechanism 9 while controlling the flow rate by 241b, ozone (O ₃ ) as an activation gas is obtained. Then, opening the valve 243f provided in the activated gas supply pipe 3c, from the activation mechanism 9 into the processing chamber 203 to supply ozone _{(O 3),} ozone through the showerhead 236 to the substrate 200 on _{(O 3} ). Also at this time, the valve 243h provided in the activated gas vent pipe 3b is closed.

  The activated gas supplied onto the substrate 200 passes between the outer periphery of the rectifying plate 205 and the processing chamber side wall 203a, and is exhausted from the exhaust pipe 231 through the exhaust port 230.

  While supplying the activation gas into the processing chamber 203, the surface of the substrate 200 is maintained at a predetermined temperature (for example, the same temperature as the CVD film formation temperature condition) by the heater 207 while rotating the substrate 200. Thereby, impurities such as C and H can be quickly and uniformly removed from a thin film of about several to several tens of angstroms (several to several tens of atomic layers) formed on the substrate 200 in the source gas supply step.

After supplying the activation gas to the substrate 200 for a predetermined time, the valve 243f provided in the activation gas supply pipe 3c is closed to stop the supply of the activation gas to the substrate 200. At this time, by opening a valve 243h provided in the activated gas vent pipe 3b, the activated gas is exhausted from the activated gas vent pipe 3b so as to bypass the processing chamber 203, and activated from the activation mechanism 9. It is preferable not to stop the supply of the activation gas (that is, the generation of the activation gas in the activation mechanism 9). Although it takes time to generate and stably supply an activation gas containing, for example, oxygen radicals from the reaction gas, the process chamber 203 is bypassed without stopping the supply of the activation gas from the activation mechanism 9. This is because the activation gas can be immediately supplied to the substrate 200 by simply switching the flow in the next activation gas supply step.

  The source gas supply step and the activation gas supply step are preferably performed at substantially the same temperature (that is, the set temperature of the heater 207 is preferably kept constant without being changed). By not causing temperature fluctuation, thermal expansion and contraction of the peripheral members such as the shower head 236, the susceptor 6 and the rectifying plate 205 are suppressed, and generation of particles (foreign matter) from the peripheral members can be suppressed. is there. Further, by not causing temperature fluctuations, it is possible to suppress the metal jumping out (metal contamination) from the metal parts subjected to the surface treatment (coating) constituting the substrate processing apparatus.

<Purge process>
By purging the valve 243f provided in the activated gas supply pipe 3c, the processing chamber 203 is purged (S8). That is, in the activated gas supply process, the valve 243e is kept open, and an inert gas (such as N ₂ ) is always supplied from the inert gas supply unit 250e into the processing chamber 203. By closing and stopping the supply of the activation gas to the substrate 200, the processing chamber 203 is purged at the same time. The inert gas supplied into the processing chamber 203 passes between the outer periphery of the rectifying plate 205 and the processing chamber side wall 203a and is exhausted from the exhaust pipe 231 through the exhaust port 230. Thereby, the residual gas in the processing chamber 203 is removed.

  After purging the processing chamber 203 for a predetermined time, the valve 243g provided in the source gas vent pipe 1b is closed, and the valve 243a provided in the source gas supply pipe 1a is opened, so that the substrate 200 is connected via the shower head 236. The source gas is supplied again upward (S5). Then, a thin film of about several to several tens of angstroms (several to several tens of atomic layers) is deposited again on the thin film formed by performing the above-described source gas supply process → purge process → activated gas supply process → purge process. To do.

<Thin film formation process (repetition process)>
As described above, the cycle process of repeating this cycle a plurality of times is performed with the source gas supply process → the purge process → the activated gas supply process → the purge process as one cycle (S9). As a result, a thin film having a desired thickness can be formed on the substrate 200 with very little mixing of impurities such as CH and OH.

<Substrate unloading process>
After forming a thin film with a desired film thickness on the substrate 200, the rotation of the substrate 200 by the rotation mechanism 267 is stopped, and a thin film with a desired film thickness is formed by the reverse procedure from the substrate loading process to the pressure adjustment process. The removed substrate 200 is taken out from the processing chamber 203 (S10). Thus, the substrate processing process is completed.

(3) Examples Subsequently, the detailed sequence of the cycle process in which the source gas supply process → the purge process → the activated gas supply process → the purge process is set as one cycle and this cycle is repeated a plurality of times is the first embodiment of the present invention. The Example concerning is described with a comparative example.

<Comparative example>
First, prior to the description of the example of the cycle process according to the first embodiment, a conventional cycle process will be described as a comparative example. FIG. 4A is a detailed sequence diagram of a comparative example illustrating a conventional cycle process. As shown in FIG. 4A, in the conventional cycle processing according to this comparative example, (1) supply of a source gas obtained by vaporizing an MO source (source gas supply step), (2) an inert gas (N ₂ (Gas) supply (purge process), (3) supply of activated gas (O ₂ / Ar mixed gas) in which oxidant (O ₂ ) is activated (activated gas supply process), (4) inert gas This cycle is repeated a plurality of times.

Here, this comparative example is implemented by the substrate processing apparatus of the first embodiment shown in FIG. 1 described above. That is, the source gas is supplied from the source gas supply pipe 1a, the inert gas is supplied from the inert gas supply pipe 2a, and the reaction gas is supplied from the reaction gas supply pipe 3a. Further, when supplying the source gas, N ₂ gas is used as a carrier gas. The reactive gas is activated by the activation mechanism 9 to become an activated gas, and is supplied from the activated gas supply pipe 3c.

  In this comparative example, the supply flow rate of the source gas from the source gas supply pipe 1a is always constant at b1. Therefore, by opening the valve 243a and closing the valve 243g, the supply flow rate of the source gas into the processing chamber 203 in the source gas supply process becomes b1. Further, by closing the valve 243a and opening the valve 243g, the raw material gas bypasses the processing chamber 203 and is exhausted from the raw material gas vent pipe 1b, so that it enters the processing chamber 203 in the activated gas supply process and the purge process. The supply flow rate of the source gas is b2 (= 0). The source gas supply flow rate b1 is a total flow rate including the carrier gas.

  In this comparative example, the supply flow rate of the activation gas from the activation gas supply pipe 3c is always constant at c1. Therefore, by opening the valve 243f and closing the valve 243h, the supply flow rate of the activated gas into the processing chamber 203 in the activated gas supply process becomes c1. Further, by closing the valve 243f and opening the valve 243h, the activated gas is exhausted from the activated gas vent pipe 3b, bypassing the process chamber 203, and therefore into the process chamber 203 in the source gas supply process and the purge process. The supply flow rate of the activated gas is c2 (= 0).

  In this comparative example, the supply flow rate of the inert gas from the inert gas supply pipe 2a is always constant at a1. Therefore, by opening the valve 243e, the supply flow rate of the inert gas into the processing chamber 203 in the purge process becomes a1. Further, by closing the valve 243e, the supply flow rate of the inert gas into the processing chamber 203 in the source gas supply process and the activation gas supply process becomes a2 (= 0).

  In the above, in order to make the total flow rate of the gas supplied into the processing chamber 203 constant, b1 (source gas supply flow rate), c1 (activation gas supply flow rate), and a1 (inert gas supply flow rate). Are controlled to be the same (b1 = c1 = a1), the mass flow controllers 241a to 241e are controlled.

  However, as shown in the pressure graph (pressure in the processing chamber) shown in the lower part of FIG. 4A, the purge performed at the moment when the valve 243e is opened (that is, between the source gas supply process and the activation gas supply process). It was found that pressure fluctuation occurred in the processing chamber 203 at the start of the process. According to the knowledge of the inventors, the pressure fluctuation generated in the processing chamber 203 causes the foreign matter in the processing chamber 203 to be agitated and adsorbed to the substrate 200 as described above.

Therefore, the inventors have intensively studied the cause of the pressure fluctuation in the processing chamber 203. As a result, when the valve 243e is closed at the end of the purge process, the pressure in the inert gas supply pipe 2a on the upstream side of the valve 243e increases, and a pressure difference is generated between the upstream and downstream of the valve 243e, When the valve 243e is opened along with the restart of the purge process, the pressure difference generated in the inert gas supply pipe 2a is transmitted into the processing chamber 203 in a pulsed manner, thereby causing a pressure fluctuation in the processing chamber 203. I found out. Then, when the pressure fluctuation speed of the pressure difference transmitted into the processing chamber 203 in a pulsed form is faster than the response speed of the pressure control means 7, or the pressure difference transmitted into the processing chamber 203 is the allowable adjustment of the pressure control means 7. It has been found that when the pressure is larger than the range, the pressure control means 7 may not be able to absorb the pressure difference. When the valve 243e is closed, the pressure in the inert gas supply pipe 2a on the upstream side of the valve 243e is approximately the same as the secondary pressure of a regulator (not shown) of the inert gas supply unit 250e (10 ⁵ (Pa order). In addition, when the valve 243e is closed, the pressure in the inert gas supply pipe 2a on the downstream side of the valve 243e is considered to be approximately the same as the pressure in the processing chamber 203 (10 ³ Pa or less). That is, when the valve 243e is closed, it is considered that a pressure difference of 10 ² Pa or more is generated between the upstream side and the downstream side of the valve 243e in the inert gas supply pipe 2a.

<Example>
On the other hand, as a result of intensive studies by the present inventors, even if the configuration of the substrate processing apparatus shown in FIG. 1 is used, if the gas supply is controlled as in the embodiment described below, It was found that the occurrence of pressure fluctuation can be suppressed.

  FIG. 4B is a detailed sequence diagram illustrating an example of the cycle process according to the first embodiment that can suppress the occurrence of pressure fluctuation in the process chamber 203.

As shown in FIG. 4B, in the cycle processing according to the present embodiment, (1) supply of raw material gas obtained by vaporizing MO raw material and inert gas (N ₂ gas) (raw material gas supply step), ( 2) Supply of inert gas (purge process), (3) Activated gas (O ₂ / Ar mixed gas) in which oxidizing agent (O ₂ ) is activated, and supply of inert gas (activated gas supply process) ), (4) Supply of inert gas (purge process) is one cycle, and this cycle is repeated a plurality of times. That is, in the comparative example, the supply of the inert gas from the inert gas supply pipe 2a into the processing chamber 203 is stopped in the raw material gas supply step and the activated gas supply step. The difference from the comparative example is that the supply of the inert gas from the inert gas supply pipe 2a into the processing chamber 203 is continuously stopped without stopping in the supply process and the activated gas supply process. Also in the present embodiment, the supply of the inert gas is performed so that the gas flow rate supplied into the processing chamber 203 is constant in total when the source gas supply process, the activation gas supply process, and the purge process are performed. It differs from the comparative example in that the flow rate is changed.

Here, this example is also implemented by the substrate processing apparatus of the first embodiment shown in FIG. 1 described above. That is, the source gas is supplied from the source gas supply pipe 1a, the inert gas is supplied from the inert gas supply pipe 2a, and the reaction gas is supplied from the reaction gas supply pipe 3a. Further, when supplying the source gas, N ₂ gas is used as a carrier gas. The reaction gas is activated by the activation mechanism 9 and is supplied as an activation gas from the activation gas supply pipe 3c.

  In the present embodiment, the supply flow rate of the source gas from the source gas supply pipe 1a is always constant at b1 as in the comparative example. Therefore, by opening the valve 243a and closing the valve 243g, the supply flow rate of the source gas into the processing chamber 203 in the source gas supply process becomes b1. Further, by closing the valve 243a and opening the valve 243g, the raw material gas bypasses the processing chamber 203 and is exhausted from the raw material gas vent pipe 1b. Therefore, the raw gas enters the processing chamber 203 in the activated gas supply process and the purge process. The supply flow rate of the source gas is b2 (= 0). The source gas supply flow rate b1 is a total flow rate including the carrier gas.

  In this embodiment, the supply flow rate of the activation gas from the activation gas supply pipe 3c is always constant at c1 as in the comparative example. Therefore, by opening the valve 243f and closing the valve 243h, the supply flow rate of the activated gas into the processing chamber 203 in the activated gas supply process becomes c1. Further, by closing the valve 243f and opening the valve 243h, the activated gas is exhausted from the activated gas vent pipe 3b, bypassing the process chamber 203, and therefore into the process chamber 203 in the source gas supply process and the purge process. The supply flow rate of the activated gas is c2 (= 0). FIG. 4B illustrates a sequence diagram in the case of c1> b1.

  On the other hand, in this embodiment, the supply flow rate of the inert gas from the inert gas supply pipe 2a is different from that of the comparative example. That is, the supply flow rate of the inert gas in the purge process is a1 (≠ 0), but the supply flow rate of the inert gas in the source gas supply process is a2 (≠ 0), and the inert gas in the activation gas supply process. The mass flow controller 241e is adjusted so that the supply flow rate is a3 (≠ 0). That is, in the raw material gas supply step and the activation gas supply step, the supply of the inert gas from the inert gas supply pipe 2a into the processing chamber 203 is continuously supplied without stopping, and the supply The flow rate is changed.

  Then, the sum (a2 + b1) of the inert gas supply flow rate (a2) and the raw material gas supply flow rate (b1) in the source gas supply step, the inert gas supply flow rate (a3) and the activation in the activated gas supply step The mass flow controllers 241a to 241e are controlled so that the sum (a3 + c1) of the gas supply flow rate (c1) is equal to the supply flow rate (a1) of the inert gas in the purge process (a2 + b1 = a3 + c1 = a1). ing.

  By controlling the gas supply flow rate in this way, it is possible to suppress the occurrence of pressure fluctuations in the processing chamber 203, thereby suppressing the stirring of foreign matters generated in the processing chamber 203 and adsorbing foreign matters to the substrate 200. Can be suppressed.

  That is, according to the present embodiment, the inert gas is continuously supplied from the inert gas supply pipe 2a into the processing chamber 203 in the source gas supply process and the activation gas supply process, and the inert gas supply pipe 2a is supplied to the inert gas supply pipe 2a. The provided valve 243e remains open and no opening / closing operation is performed. Thereby, it is considered that no pressure difference is generated in the inert gas supply pipe 2a, and the occurrence of pressure fluctuation in the processing chamber 203 can be suppressed.

  Also in this embodiment, for example, if a3 (inert gas supply flow rate in the activation gas supply process) = 0, the valve 243e is opened and closed, and the purge process is resumed (inactive). When the gas supply flow rate changes from a3 (= 0) to a1 (≠ 0), the pressure difference generated in the inert gas supply pipe 2a is transmitted into the processing chamber 203, and the pressure in the processing chamber 203 is increased. It is thought that fluctuation may occur.

2. Second Embodiment of the Invention Next, the configuration of the processing furnace 202 of the substrate processing apparatus as the second embodiment of the present invention and the examples of the cycle processing of the substrate processing steps performed by the processing furnace 202 will be sequentially described. explain.

(1) Configuration of Processing Furnace First, the configuration of the processing furnace of the substrate processing apparatus as the second embodiment of the present invention will be described with reference to FIG. FIG. 2 is a schematic view showing an example of a processing furnace of a single wafer MOCVD apparatus which is a substrate processing apparatus according to a second embodiment of the present invention.

The difference between the processing furnace 202 of the second embodiment and the processing furnace 202 of the first embodiment is that
In the second embodiment, not only the source gas supply pipe 1a and the activated gas supply pipe 3c but also the inert gas supply pipe 2a is provided with an inert gas vent pipe 2b as an inert gas vent line. is there. That is, as shown in FIG. 2, the inert gas vent pipe 2b is provided on the upstream side of the valve 243e of the inert gas supply pipe 2a (that is, between the mass flow controller 241e and the valve 243e). The inert gas vent pipe 2b is connected between the pressure control means 7 of the exhaust pipe 231 and the exhaust pump 8 via a valve 243i. Other configurations are the same as those of the processing furnace 202 according to the first embodiment.

  Regarding gas supply pipes (raw gas supply pipe 1a, activated gas supply pipe 3c) of reactive processing gases (raw gas, activated gas) that need to precisely control the gas supply flow rate, A vent line (raw gas vent pipe 1b, activated gas vent pipe 3b) may be provided. Gas supply pipes (raw material gas supply pipe 1a, activated gas supply pipe 3c) are configured such that the supply destination of each gas can be switched from the vent line side to the processing chamber 203 side by valve opening / closing control. This is because switching can be performed at a higher speed than when a flow rate control mechanism is provided for each. However, normally, the inert gas supply pipe 2a is not provided with a vent line. This is because the inert gas is not a reactive gas, and its flow rate does not directly contribute to the reaction system, and it is not necessary to precisely control the gas supply flow rate. The main reason is that the cost of the substrate processing apparatus increases due to the new line.

  On the other hand, in the second embodiment, the inert gas supply pipe 2a is also provided with the inert gas vent pipe 2b, corresponding to the high-speed switching of the supply destination of the processing gas (raw material gas, activated gas), By configuring so that the supply destination of the inert gas can also be switched at high speed, the generation of pressure fluctuations in the processing chamber 203 is suppressed.

(2) Example of cycle processing The substrate processing step according to the second embodiment is different from the substrate processing step according to the first embodiment in the cycle processing performed in the substrate processing step. The rest is the same as the substrate processing step according to the first embodiment. Hereinafter, sequence example 1 and sequence example 2 in the example of the second embodiment will be sequentially described with reference to FIG. FIGS. 5A and 5B are sequence example 1 and sequence example 2 in the example of the second embodiment.

This example is implemented by the substrate processing apparatus of the second embodiment shown in FIG. 2 described above. That is, the source gas is supplied from the source gas supply pipe 1a, the inert gas is supplied from the inert gas supply pipe 2a, and the reaction gas is supplied from the reaction gas supply pipe 3a. Further, when supplying the source gas, N ₂ gas is used as a carrier gas. The reaction gas is activated by the activation mechanism 9 and is supplied as an activation gas from the activation gas supply pipe 3c.

<Sequence example 1>
In Sequence Example 1 shown in FIG. 5A, a process of supplying a source gas as a first process gas and an activation gas as a _second process gas into the process chamber 203, and N ₂ as an inert gas. And the process of purging the inside of the processing chamber 203 is repeated.

Specifically, a process of supplying a source gas as a first processing gas into the processing chamber 203, and supplying N ₂ as an inert gas into the processing chamber 203 from the inert gas supply pipe 2a. A step of purging the interior of 203, a step of supplying an activation gas as a second processing gas into the processing chamber 203, and a supply of N ₂ as an inert gas into the processing chamber 203 from an inert gas supply pipe 2a Then, the process of purging the inside of the processing chamber 203 is one cycle, and this cycle is repeated a plurality of times.

In the step of supplying the source gas and the step of supplying the activation gas, the valve 243e is closed and the valve 243i is opened to supply N ₂ supplied to the inert gas supply pipe 2a into the processing chamber 203. Without exhausting, the exhaust gas is exhausted from the inert gas vent pipe 2b.

Further, in the process of purging the inside of the processing chamber 203, the valve 243e is opened and the valve 243i is closed to process the flow of N ₂ supplied to the inert gas supply pipe 2a from the flow toward the inert gas vent pipe 2b. The flow is switched to the flow toward the chamber 203. At this time, the total gas flow rate in the processing chamber 203 is made constant.

  In sequence example 1, the supply flow rate of the source gas from the source gas supply pipe 1a is always constant at b1. Therefore, by opening the valve 243a and closing the valve 243g, the supply flow rate of the source gas into the processing chamber 203 in the source gas supply process becomes b1. Further, by closing the valve 243a and opening the valve 243g, the raw material gas bypasses the processing chamber 203 and is exhausted from the raw material gas vent pipe 1b. Therefore, the raw gas enters the processing chamber 203 in the activated gas supply process and the purge process. The supply flow rate of the source gas is b2 (= 0). The source gas supply flow rate b1 is a total flow rate including the carrier gas.

  In Sequence Example 1, the supply flow rate of the activation gas from the activation gas supply pipe 3c is always constant at c1. Therefore, by opening the valve 243f and closing the valve 243h, the supply flow rate of the activated gas into the processing chamber 203 in the activated gas supply process becomes c1. Further, by closing the valve 243f and opening the valve 243h, the activated gas is exhausted from the activated gas vent pipe 3b, bypassing the process chamber 203, and therefore into the process chamber 203 in the source gas supply process and the purge process. The supply flow rate of the activated gas is c2 (= 0).

  Furthermore, in Sequence Example 1, the supply flow rate of the inert gas from the inert gas supply pipe 2a is always constant at a1. In the purge process, the valve 243e is opened and the valve 243i is closed, so that the flow of the inert gas supplied to the inert gas supply pipe 2a is moved from the flow toward the inert gas vent pipe 2b into the processing chamber 203. I try to switch to the direction of the flow. Therefore, the supply flow rate of the inert gas into the processing chamber 203 in the purge process is a1. In the raw material gas supply step and the activated gas supply step, the inert gas supplied to the inert gas supply pipe 2a is supplied into the processing chamber 203 by closing the valve 243e and opening the valve 243i. The exhaust gas is exhausted from the inert gas vent pipe 2b. Therefore, the supply flow rate of the inert gas into the processing chamber 203 in the source gas supply process and the activation gas supply process is a2 (= 0).

  The source gas supply flow rate (b1) in the source gas supply step, the activation gas supply flow rate (c1) in the activation gas supply step, and the inert gas supply flow rate (a1) in the purge step are equal. The mass flow controllers 241a to 241e are controlled so that (b1 = c1 = a1), that is, the total gas flow rate in the processing chamber 203 is constant.

  By controlling the gas supply flow rate in this way, it is possible to suppress the occurrence of pressure fluctuations in the processing chamber 203, thereby suppressing the stirring of foreign matters generated in the processing chamber 203 and adsorbing foreign matters to the substrate 200. Can be suppressed.

That is, according to Sequence Example 1, in the raw material gas supply step and the activation gas supply step, the valve 243e provided in the inert gas supply pipe 2a is closed and the valve 243i provided in the inert gas vent pipe 2b is simultaneously closed. By opening, the inert gas always flows in the inert gas supply pipe 2a. According to the knowledge of the inventors, the inert gas always circulates in the inert gas supply pipe 2a, so that even if the valve 243e is closed, the pressure difference generated in the inert gas supply pipe 2a is reduced to the inert gas vent pipe 2b. Compared to the case where no is provided (comparative example), it is much smaller. Even if the valve 243e is opened again, the pressure difference transmitted into the processing chamber 203 is small, so that the pressure difference is absorbed in the processing chamber 203, and the occurrence of pressure fluctuations in the processing chamber 203 can be suppressed. It is thought that.

When the valve 243e is closed and the valve 243i is opened, the pressure in the inert gas supply pipe 2a on the downstream side of the valve 243e is approximately the same as the pressure in the processing chamber 203 (10 ³ Pa or less). In addition, the pressure in the inert gas supply pipe 2a on the upstream side of the valve 243e is also considered to be approximately the same as the pressure in the processing chamber 203 (10 ³ Pa or less). This is because, in this state, the portion on the downstream side of the valve 243e in the inert gas supply pipe 2a and the portion on the upstream side of the valve 243e are similarly evacuated by the same exhaust pump 8. Because. However, since the exhaust paths from the valve 243e to the exhaust pump 8 are different from each other (the flow resistance of each exhaust path is different), the upstream side and the downstream side of the valve 243e in the inert gas supply pipe 2a are between. It is considered that a slight pressure difference of less than 10 Pa can occur.

  As described above, when the inert gas vent pipe 2b is not provided (comparative example), by closing the valve 243e, the upstream side and the downstream side of the valve 243e in the inert gas supply pipe 2a are disposed. It is considered that a pressure difference of at least twice the processing pressure (for example, 100 Pa or more) is generated. On the other hand, in the case of the sequence example 1, by closing the valve 243e and opening the valve 243i, the pressure difference between the upstream side and the downstream side of the valve 243e in the inert gas supply pipe 2a is processed. It is considered that the pressure can be suppressed to less than 1/5 (for example, less than 10 Pa). That is, according to Sequence Example 1, the pressure difference between the upstream side and the downstream side of the valve 243e in the inert gas supply pipe 2a is compared with the case where the inert gas vent pipe 2b is not provided (comparative example). The pressure fluctuation in the processing chamber 203 can be sufficiently suppressed. And in the case of the sequence example 1, corresponding to faster gas switching, the total flow rate of the gas supply flow rate can be controlled to suppress the occurrence of pressure fluctuations.

<Sequence example 2>
In sequence example 2 shown in FIG. 5B, a process of supplying a source gas as a first processing gas and an activation gas as a _second processing gas into the processing chamber 203, and N ₂ as an inert gas. And the process of purging the inside of the processing chamber 203 is repeated.

Specifically, a process of supplying a source gas as a first processing gas into the processing chamber 203, and supplying N ₂ as an inert gas into the processing chamber 203 from the inert gas supply pipe 2a. A step of purging the interior of 203, a step of supplying an activation gas as a second processing gas into the processing chamber 203, and a supply of N ₂ as an inert gas into the processing chamber 203 from an inert gas supply pipe 2a Then, the process of purging the inside of the processing chamber 203 is one cycle, and this cycle is repeated a plurality of times.

In the step of supplying the source gas and the step of supplying the activation gas, the valve 243e is closed and the valve 243i is opened, so that the N ₂ supplied to the inert gas supply pipe 2a is not supplied into the processing chamber 203. The inert gas vent pipe 2b is evacuated, or the flow rate of N ₂ flowing from the inert gas supply pipe 2a into the processing chamber 203 is made smaller than in the process of purging the inside of the processing chamber 203.

In the process of purging the inside of the processing chamber 203, the valve 243e is opened and the valve 243i is closed, whereby the flow of N ₂ supplied to the inert gas supply pipe 2a is changed from the flow toward the inert gas vent pipe 2b to the processing chamber 203. The flow rate of N ₂ flowing from the inert gas supply pipe 2a into the processing chamber 203 is increased as compared with the step of supplying the source gas and the step of supplying the activation gas.

More specifically, in the process of supplying the source gas as the first process gas, the flow rate of N ₂ flowing from the inert gas supply pipe 2a into the process chamber 203 is smaller than in the process of purging the process chamber 203. In the step of supplying the activation gas as the second processing gas, the valve 243e is closed and the valve 243i is opened, so that the N ₂ supplied to the inert gas supply pipe 2a is supplied to the processing chamber 203. The exhaust gas is exhausted from the inert gas vent pipe 2b without being supplied into the interior.

Further, in the step of purging the inside of the processing chamber 203 after the step of supplying the source gas, the flow rate of N ₂ flowing from the inert gas supply pipe 2a into the processing chamber 203 is made larger than that in the step of supplying the source gas. In the step of purging the inside of the processing chamber 203 after the step of supplying the activated gas, the valve 243e is opened and the valve 243i is closed, so that the flow of N ₂ supplied to the inert gas supply pipe 2a is The flow toward the inert gas vent pipe 2b is switched to the flow toward the processing chamber 203. At this time, the total gas flow rate in the processing chamber 203 is made constant.

  In sequence example 2, the supply flow rate of the source gas from the source gas supply pipe 1a is always constant at b1. Therefore, by opening the valve 243a and closing the valve 243g, the supply flow rate of the source gas into the processing chamber 203 in the source gas supply process becomes b1. Further, by closing the valve 243a and opening the valve 243g, the raw material gas bypasses the processing chamber 203 and is exhausted from the raw material gas vent pipe 1b. Therefore, the raw gas enters the processing chamber 203 in the activated gas supply process and the purge process. The supply flow rate of the source gas is b2 (= 0). The source gas supply flow rate b1 is a total flow rate including the carrier gas.

  In Sequence Example 2, the supply flow rate of the activation gas from the activation gas supply pipe 3c is always constant at c1. Therefore, by opening the valve 243f and closing the valve 243h, the supply flow rate of the activated gas into the processing chamber 203 in the activated gas supply process becomes c1. Further, by closing the valve 243f and opening the valve 243h, the activated gas is exhausted from the activated gas vent pipe 3b, bypassing the process chamber 203, and therefore into the process chamber 203 in the source gas supply process and the purge process. The supply flow rate of the activated gas is c2 (= 0). As described above, the supply flow rate of the source gas and the supply flow rate of the activation gas into the processing chamber 203 in each step of the sequence example 2 are the same as those in the sequence example 1. However, sequence example 2 is different from sequence example 1 in that c1 is larger than b1. That is, in Sequence Example 2, the supply flow rate c1 of the activation gas from the activation gas supply pipe 3c is larger than the supply flow rate b1 of the source gas from the source gas supply pipe 1a (c1> b1). The mass flow controllers 241a to 241c are controlled.

  Further, the supply flow rate of the inert gas from the inert gas supply pipe 2a in the sequence example 2 is also different from that in the sequence example 1.

  First, in the purge step after the source gas supply step, the supply flow rate of the inert gas flowing from the inert gas supply pipe 2a into the process chamber 203 is maintained while the valve 243e is opened and the valve 243i is closed. The valve 241e is controlled so as to increase the supply flow rate of the inert gas in the gas supply process. Further, in the purge step after the activated gas supply step, the flow of the inert gas supplied to the inert gas supply pipe 2a is made by opening the valve 243e and closing the valve 243i, as in Sequence Example 1. The flow toward the inert gas vent pipe 2b is switched to the flow toward the processing chamber 203. In any purge process, the supply flow rate of the inert gas into the processing chamber 203 is a1.

  Note that the mass flow controller 241e is adjusted so that the supply flow rate a2 (≠ 0) of the inert gas in the source gas supply step is smaller than the supply flow rate a1 of the inert gas in the purge step (a2 <a1).

  In the activated gas supply process, as in Sequence Example 1, the valve 243e is closed and the valve 243i is opened, whereby the inert gas is exhausted from the inert gas vent pipe 2b, bypassing the processing chamber 203, and processed. The supply flow rate of the inert gas into the chamber 203 is a3 (= 0).

  Then, the sum of the inert gas supply flow rate (a2) and the raw material gas supply flow rate (b1) in the source gas supply step, the activation gas supply flow rate (c1) in the activation gas supply step, and the inertness in the purge step. The mass flow controllers 241a to 241e are controlled so that the supply flow rate (a1) of the active gas is equal to (a2 + b1 = c1 = a1), that is, the total gas flow rate in the processing chamber 203 is constant. Yes.

  By controlling the gas supply flow rate in this way, it is possible to suppress the occurrence of pressure fluctuations in the processing chamber 203, thereby suppressing the stirring of foreign matters generated in the processing chamber 203 and adsorbing foreign matters to the substrate 200. Can be suppressed.

  That is, when shifting from the source gas supply process to the purge process, the method of the first embodiment (FIG. 4B) described above is applied, and when shifting from the activated gas supply process to the purge process. The method of the sequence example 1 (FIG. 5A) of the example in the second embodiment described above is applied. Even in this case, it is possible to suppress the occurrence of pressure fluctuation in the processing chamber 203 for the reason described above. Note that the method of FIG. 5A is applied when shifting from the source gas supply step to the purge step, and the method of FIG. 4B is applied when shifting from the activation gas supply step to the purge step. However, the same effect can be obtained.

3. Third Embodiment of the Invention Next, the configuration of the processing furnace 202 of the substrate processing apparatus as the third embodiment of the present invention and the examples of the cycle processing of the substrate processing steps performed by the processing furnace 202 are sequentially described. explain.

(1) Configuration of Processing Furnace First, the configuration of the processing furnace of the substrate processing apparatus as the third embodiment of the present invention will be described with reference to FIG. FIG. 3 is a schematic view showing an example of a processing furnace of a single wafer MOCVD apparatus which is a substrate processing apparatus according to a third embodiment of the present invention.

The difference between the processing furnace 202 in the third embodiment and the processing furnace 202 in the second embodiment is that, in the third embodiment, an inert gas supply line (first inert gas supply line) for supplying N ₂ is used. ) In addition to the first inert gas supply pipe 2a as a second inert gas supply pipe 4a as an inert gas supply line (second inert gas supply line) for supplying Ar. is there. Note that the inert gas supplied from the second inert gas supply pipe 4a is not limited to Ar, and may be N ₂ or He.

  A second inert gas supply unit 250d for supplying Ar, a mass flow controller 241d as a flow rate control unit, and a valve 243j for controlling the supply of Ar are connected in series to the second inert gas supply pipe 4a. ing. The second inert gas supply pipe 4a is not directly connected to the shower head 236, but is unified so as to merge with the activated gas supply pipe 3c (downstream of the valve 243f) on the downstream side of the valve 243j. Connected.

  Further, a second inert gas vent pipe 4b as a second inert gas vent line is provided on the upstream side of the valve 243j of the second inert gas supply pipe 4a (that is, between the mass flow controller 241d and the valve 243j). Yes. The second inert gas vent pipe 4b is connected between the pressure control means 7 of the exhaust pipe 231 and the exhaust pump 8 via a valve 243k.

In addition, the processing furnace 202 in the third embodiment is different from the processing furnace 202 of the second embodiment in that, in the third embodiment, the first inert gas supply pipe 2a that supplies N ₂ is provided. Instead of being directly connected to the shower head 236, the shower head 236 is connected to the raw material gas supply pipe 1a (downstream of the valve 243a) so as to be merged on the downstream side of the valve 243e.

  Other configurations are the same as those of the first embodiment.

(2) Examples of cycle processing The substrate processing step according to the third embodiment is different from the substrate processing steps according to the first and second embodiments in the cycle processing performed in the substrate processing step. Others are the same as the substrate processing steps according to the first and second embodiments. Below, the example of a sequence in the Example concerning 3rd Embodiment is demonstrated sequentially using FIG. FIG. 6 is a sequence example in an example according to the third embodiment.

This example is implemented by the substrate processing apparatus of the third embodiment shown in FIG. 3 described above. That is, the source gas is supplied from the source gas supply pipe 1a, the inert gas (N ₂ ) is supplied from the first inert gas supply pipe 2a, the reaction gas is supplied from the reaction gas supply pipe 3a, and the inert gas (Ar) is supplied from the second inert gas. The gas is supplied from the active gas supply pipe 4a. Further, when supplying the source gas, N ₂ gas is used as a carrier gas. The reaction gas is activated by the activation mechanism 9 and is supplied as an activation gas from the activation gas supply pipe 3c.

Specifically, in the sequence example shown in FIG. 6, a process of supplying a source gas as a first processing gas and an activation gas as a second processing gas into the processing chamber 203 and N as an inert gas. _The process of purging the inside of the processing chamber 203 by supplying ₂ or Ar is repeated.

Specifically, a process of supplying a raw material gas as a first processing gas into the processing chamber 203, and the inertness in the processing chamber 203 from the first inert gas supply pipe 2a and the second inert gas supply pipe 4a. A step of supplying N ₂ and Ar as gases to purge the inside of the processing chamber 203; a step of supplying an activation gas as a second processing gas into the processing chamber 203; and a first inert gas supply pipe 2a. The process of purging the processing chamber by supplying N ₂ and Ar as the inert gas into the processing chamber from the second inert gas supply pipe 4a is set as one cycle, and this cycle is repeated a plurality of times.

In the step of supplying the source gas, the valve 243e is closed and the valve 243i is opened, so that the N ₂ supplied to the first inert gas supply pipe 2a is supplied from the inert gas vent pipe 2b without being supplied into the processing chamber 203. While exhausting, the valve 243k is closed and the valve 243j is opened, so that Ar supplied to the second inert gas supply pipe 4a is supplied into the processing chamber 203.

In the step of supplying the activated gas, the valve 243j is closed and the valve 243k is opened, so that the second inert gas vent is not supplied into the processing chamber 203 without supplying Ar supplied to the second inert gas supply pipe 4a. While exhausting from the pipe 4b, the valve 243i is closed and the valve 243e is opened, so that N ₂ supplied to the first inert gas supply pipe 2a is supplied into the processing chamber 203.

In the step of purging the inside of the processing chamber 203 after the step of supplying the source gas, the valve 243k is closed and the valve 243j is kept open, and the flow of Ar flowing from the second inert gas supply pipe 4a into the processing chamber 203 is performed. In the maintained state, the valve 243i is closed and the valve 243e is opened, so that the flow of N ₂ supplied to the first inert gas supply pipe 2a moves from the flow toward the inert gas vent pipe 2b into the processing chamber 203. I try to switch to flow.

In the step of purging the inside of the processing chamber 203 after the step of supplying the activation gas, the valve 243i is closed and the valve 243e is kept open, and N ₂ flowing from the first inert gas supply pipe 2a into the processing chamber 203 is kept. With the flow maintained, the valve 243k is closed and the valve 243j is opened, whereby the flow of Ar supplied to the second inert gas supply pipe 4a is changed from the flow toward the second inert gas vent pipe 4b to the processing chamber 203. I try to switch to the inward flow. At this time, the total gas flow rate in the processing chamber 203 is made constant.

  In this embodiment, the supply flow rate of the source gas from the source gas supply pipe 1a is always constant at b1. Therefore, by opening the valve 243a and closing the valve 243g, the supply flow rate of the source gas into the processing chamber 203 in the source gas supply process becomes b1. Further, by closing the valve 243a and opening the valve 243g, the raw material gas bypasses the processing chamber 203 and is exhausted from the raw material gas vent pipe 1b. Therefore, the raw gas enters the processing chamber 203 in the activated gas supply process and the purge process. The supply flow rate of the source gas is b2 (= 0). The source gas supply flow rate b1 is a total flow rate including the carrier gas.

  In this embodiment, the supply flow rate of the activation gas from the activation gas supply pipe 3c is always constant at c1. Therefore, by opening the valve 243f and closing the valve 243h, the supply flow rate of the activated gas into the processing chamber 203 in the activated gas supply process becomes c1. Further, by closing the valve 243f and opening the valve 243h, the activated gas is exhausted from the activated gas vent pipe 3b, bypassing the process chamber 203, and therefore into the process chamber 203 in the source gas supply process and the purge process. The supply flow rate of the activated gas is c2 (= 0).

In this embodiment, the supply flow rate of the inert gas (N ₂ ) from the first inert gas supply pipe 2a is always constant at d1. Therefore, in the purge step and the activated gas supply step, the supply flow rate of the inert gas (N ₂ ) into the processing chamber 203 via the raw material gas supply pipe 1a is set by opening the valve 243e and closing the valve 243i. d1. Further, during the raw material gas supply process, the valve 243e is closed and the valve 243i is opened so that the supply flow rate of the inert gas (N ₂ ) into the processing chamber 203 via the raw material gas supply pipe 1a is d2 (= 0).

  In this embodiment, the supply flow rate of the inert gas (Ar) from the second inert gas supply pipe 4a is always constant at e1. Therefore, during the purge process and the source gas supply process, the valve 243j is opened and the valve 243k is closed so that the supply flow rate of the inert gas (Ar) to the processing chamber 203 via the activated gas supply pipe 3c is e1. It becomes. In the activated gas supply process, the flow rate of the inert gas (Ar) to the processing chamber 203 via the activated gas supply pipe 3c is e2 (= 0) by closing the valve 243j and opening the valve 243k. )

The sum (e1 + b1) of the supply flow rate (e1) of the inert gas (Ar) and the supply flow rate (b1) of the source gas in the source gas supply step, and the supply of the inert gas (N ₂ ) in the activation gas supply step Sum (d1 + c1) of flow rate (d1) and activation gas supply flow rate (c1), supply flow rate (d1) of inert gas (N ₂ ) and supply flow rate (e1) of inert gas (Ar) in the purge process The mass flow controllers 241a to 241e are controlled so that the sum (d1 + e1) is equal to each other (e1 + b1 = d1 + c1 = d1 + e1).

  By controlling the gas supply flow rate in this way, it is possible to suppress the occurrence of pressure fluctuations in the processing chamber 203, thereby suppressing the stirring of foreign matters generated in the processing chamber 203 and adsorbing foreign matters to the substrate 200. Can be suppressed.

That is, according to the present embodiment, the inert gas supply is achieved by opening the valve 243i provided in the first inert gas vent pipe 2b simultaneously with closing the valve 243e provided in the first inert gas supply pipe 2a. The inert gas (N ₂ ) in the pipe 2a always flows. Similarly, by closing the valve 243j provided in the second inert gas supply pipe 4a and simultaneously opening the valve 243k provided in the second inert gas vent pipe 4b, the inside of the inert gas supply pipe 4a is opened. Inert gas (Ar) always circulates. According to the knowledge of the inventors, the inert gas (N ₂ , Ar) always flows through the first inert gas supply pipe 2a and the second inert gas supply pipe 4a, so that the valve 243e and the valve 243j are Even when closed, the pressure difference generated in the first inert gas supply pipe 2a and the second inert gas supply pipe 4a is far greater than when the first inert gas vent pipe 2b and the second inert gas vent pipe 4b are not provided. Even if the valve 243e and the valve 243j are opened, the pressure difference transmitted into the processing chamber 203 is small. Therefore, the pressure difference is absorbed in the processing chamber 203, and the pressure fluctuation in the processing chamber 203 is changed. It is thought that the occurrence can be suppressed.

When the valve 243e is closed and the valve 243i is opened, the pressure in the first inert gas supply pipe 2a downstream of the valve 243e is approximately the same as the pressure in the processing chamber 203 (10 ³ Pa or less). The pressure in the first inert gas supply pipe 2a upstream of the valve 243e is also considered to be approximately the same as the pressure in the processing chamber 203 (10 ³ Pa or less). This is because, in this state, both the portion on the downstream side of the valve 243e in the first inert gas supply pipe 2a and the portion on the upstream side of the valve 243e are similarly vacuumed by the same exhaust pump 8. Because it is exhausting. However, since the exhaust paths from the valve 243e to the exhaust pump 8 are different from each other, there is a slight pressure difference of less than about 10 Pa between the upstream side and the downstream side of the valve 243e in the first inert gas supply pipe 2a. Is thought to be possible. Similarly, when the valve 243j is closed and the valve 243k is opened, the pressure in the second inert gas supply pipe 4a on the downstream side of the valve 243j is approximately the same as the pressure in the processing chamber 203 (10 ³ Pa And the pressure in the second inert gas supply pipe 4a upstream of the valve 243j is approximately the same as the pressure in the processing chamber 203 (10 ³ Pa or less). Conceivable. In this state, in the second inert gas supply pipe 4a, the portion on the downstream side of the valve 243j and the portion on the upstream side of the valve 243j are similarly vacuumed by the same exhaust pump 8. Because it is exhausting. However, since the exhaust paths from the valve 243j to the exhaust pump 8 are different from each other (the flow resistance of each exhaust path is different), the upstream side and the downstream side of the valve 243j in the second inert gas supply pipe 4a are different. It is considered that a slight pressure difference of less than about 10 Pa can occur between them. In the case of the present embodiment, the occurrence of pressure fluctuation can be suppressed by controlling the total flow rate of the gas supply flow rate in response to faster gas switching.

Further, according to the present embodiment, the inside of the source gas supply pipe 1a can be purged with N _{2 at} all times except when the source gas is supplied, and the inside of the activated gas supply pipe 3c is always kept at Ar except when the activation gas is supplied. It can be said that the third embodiment (configuration of FIG. 6) is more preferable than the second embodiment (configuration of FIG. 5) in that it has a purging action of the piping by such an inert gas. .

In the example of the first embodiment (FIG. 4B), the inert gas is supplied by the mass flow controller 241e while the valve 243e provided in the inert gas supply pipe 2a is kept open without being closed. The inert gas is supplied into the processing chamber 203 in a pulsed manner by increasing or decreasing the supply flow rate. In contrast, in the sequence example 1 (FIG. 5A) of the second embodiment, the inert gas supply flow rate is not increased or decreased by the mass flow controller 241e, but the valves 243e and 243i are switched to be opened and closed. By switching the gas flow, the inert gas is supplied into the processing chamber 203 in pulses. In the third embodiment, the flow rate of the inert gas is switched by switching the opening and closing of the valves 243e, 243i, 243j, and 243k instead of increasing or decreasing the supply flow rate of the inert gas by the mass flow controllers 241e and 241d. Thus, an inert gas is supplied into the processing chamber 203 in pulses. As a result, as shown in FIG. 8B, the supply flow rate of the inert gas can be increased / decreased more quickly (responsiveness of gas flow rate control can be improved).

  FIG. 8A is a graph illustrating the change in the supply flow rate of the inert gas when the supply flow rate is increased or decreased by the mass flow controller, and FIG. 8B is a graph when the flow is switched by switching the opening / closing of the valve. It is a graph which illustrates the supply flow rate change of an inert gas. In any graph, the vertical axis indicates the supply flow rate of the inert gas supplied in a pulsed manner into the processing chamber 203, and the horizontal axis indicates the elapsed time. According to FIG. 8, when switching the flow of the inert gas by switching the opening and closing of the valve (FIG. 8B), compared to the case where the supply flow rate is increased or decreased by the mass flow controller (FIG. 8A), The time from the start of increase / decrease in the supply flow rate until the supply flow rate becomes stable (response time for supply flow rate control) is further shortened, and the increase / decrease in the supply flow rate can be performed more quickly. When the supply flow rate is increased or decreased by the mass flow controller (Fig. 8 (a)), it takes time until the flow rate stabilizes after the flow rate change command is given. When the flow of the inert gas is switched by switching (FIG. 8 (b)), the time from switching the opening / closing of the valve until the flow rate becomes stable is short, and the rise and fall of the flow rate change are good.

4). Fourth Embodiment of the Invention Next, the configuration of the processing furnace 202 of the substrate processing apparatus as the fourth embodiment of the present invention and the examples of the cycle processing of the substrate processing steps performed by the processing furnace 202 are sequentially described. explain.

(1) Configuration of Processing Furnace First, the configuration of the processing furnace 202 of the substrate processing apparatus as the fourth embodiment of the present invention will be described with reference to FIG. FIG. 9 is a schematic view showing an example of a processing furnace 202 of a single wafer MOCVD apparatus which is a substrate processing apparatus according to the fourth embodiment of the present invention.

  The processing furnace 202 in the fourth embodiment is different from the processing furnace 202 in the third embodiment in that the raw material gas supply pipe 1a, the first inert gas supply pipe 2a, the activated gas supply pipe 3c, and the second inert gas. The gas supply pipe 4a is unified and connected to the shower head 236 so as to join downstream of the valves 243a, 243e, 243f, and 243j, respectively. The raw material gas vent pipe 1b, the first inert gas vent pipe 2b, the activated gas vent pipe 3b, and the second inert gas vent pipe 4b are connected via valves 243g, 243i, 243h, and 243k, as in the third embodiment. The exhaust pipe 231 is connected between the pressure control means 7 and the exhaust pump 8.

  Other configurations are the same as those of the third embodiment.

(2) Examples of cycle processing The substrate processing step according to the fourth embodiment is different from the substrate processing step according to the third embodiment in that the flow rate of gas exhausted by the exhaust pump 8 in the cycle step (S9). Each flow rate controller and each valve are controlled so that (the load of the exhaust pump 8) is always constant.

  That is, the flow rate of gas exhausted from the exhaust pipe 231 (exhaust port 230) when supplying the processing gas into the processing chamber 203 (the flow rate of gas exhausted through the processing chamber 203), the source gas vent pipe 1b, The flow rate of gas exhausted from the first inert gas vent tube 2b, the activated gas vent tube 3b, and the second inert gas vent tube 4b (the flow rate of gas exhausted from each vent tube without passing through the processing chamber 203) The total flow rate, the flow rate of gas exhausted from the exhaust pipe 231 (exhaust port 230) when supplying the inert gas into the processing chamber 203 (flow rate of gas exhausted through the processing chamber 203), and the raw material gas vent The flow rate of the gas exhausted from the pipe 1b, the first inert gas vent pipe 2b, the activated gas vent pipe 3b, and the second inert gas vent pipe 4b (exhausted from each vent pipe without passing through the processing chamber 203). As the total flow rate of the flow) of the gas, becomes constant, a point of controlling the operation of the mass flow controllers 241a~241e and each valve 243A～243k.

  An example of the flow rate of various gases in the cycle process of this embodiment will be described with reference to FIG.

First, in the source gas supply step (S5), the flow rate is controlled by the mass flow controllers 241a to 241e, the valves 243a, 243i, 243h, and 243j are opened, and the valves 243g, 243e, 243f, and 243k are closed to thereby supply the source gas supply pipe. The flow rate of the raw material gas supplied from 1a into the processing chamber 203 and exhausted from the exhaust port 230 is 0.5 slm, and is supplied from the second inert gas supply pipe 4a into the processing chamber 203 and exhausted from the exhaust port 230. The flow rate of the active gas (Ar) is 0.2 slm, the flow rate of the inert gas (N ₂ ) exhausted from the first inert gas vent pipe 2b without passing through the processing chamber 203 is 0.5 slm, and the processing chamber 203 The flow rate of the activated gas exhausted from the activated gas vent pipe 3b without passing through is set to 0.2 slm.

In the purge process (S6) according to the present embodiment, the valves 243g, 243e, 243h, and 243j are opened while the flow rate is controlled by the mass flow controllers 241a to 241e, and the valves 243a, 243i, 243f, and 243k are closed. The flow rate of the inert gas (N ₂ ) supplied from the first inert gas supply pipe 2a into the processing chamber 203 and exhausted from the exhaust port 230 is 0.5 slm, and from the second inert gas supply pipe 4a to the processing chamber 203. And the flow rate of the inert gas (Ar) exhausted from the exhaust port 230 is 0.2 slm, the flow rate of the source gas exhausted from the source gas vent pipe 1b without passing through the processing chamber 203 is 0.5 slm, The flow rate of the activated gas exhausted from the activated gas vent pipe 3b without passing through the processing chamber 203 is set to 0.2 slm.

In the activated gas supply step (S7) according to the present embodiment, the valves 243g, 243e, 243f, and 243k are opened and the valves 243a, 243i, 243h, and 243j are closed while the flow rate is controlled by the mass flow controllers 241a to 241e. Thus, the flow rate of the inert gas (N ₂ ) supplied from the first inert gas supply pipe 2a into the processing chamber 203 and exhausted from the exhaust port 230 is set to 0.5 slm, and the processing chamber 203 is supplied from the activated gas supply pipe 3a. The flow rate of the activated gas supplied to the inside and exhausted from the exhaust port 230 is set to 0.2 slm, the flow rate of the raw material gas exhausted from the raw material gas vent pipe 1b without passing through the processing chamber 203 is set to 0.5 slm, and the processing chamber The flow rate of the inert gas (Ar) exhausted from the second inert gas vent pipe 4b without passing through 203 is 0.2 slm. There.

In the purge supply step (S8) according to the present embodiment, the valves 243g, 243e, 243h, and 243j are opened and the valves 243a, 243i, 243f, and 243k are closed while the flow rate is controlled by the mass flow controllers 241a to 241e. The flow rate of the inert gas (N ₂ ) supplied from the first inert gas supply pipe 2a into the processing chamber 203 and exhausted from the exhaust port 230 is 0.5 slm, and from the second inert gas supply pipe 4a to the processing chamber 203. The flow rate of the inert gas (Ar) supplied to the inside and exhausted from the exhaust port 230 is set to 0.2 slm, and the flow rate of the source gas exhausted from the source gas vent pipe 1b without passing through the processing chamber 203 is set to 0.5 slm. The flow rate of the activated gas exhausted from the activated gas vent pipe 3b without passing through the processing chamber 203 is 0.2 slm. .

  Thus, in this embodiment, in each step of the source gas supply step (S5) to the purge supply step (S8), the subtotal flow rate of the gas supplied into the processing chamber 203 and exhausted from the exhaust port 230 is always set to 0. 7 slm (= 0.5 slm + 0.2 slm), and the subtotal flow rate of the gas exhausted from each vent pipe without passing through the processing chamber 203 is always 0.7 slm (= 0.5 slm + 0.2 slm). The total flow rate of the generated gas is always 1.4 slm (= 0.7 slm + 0.7 slm). That is, the flow rate of the gas exhausted by the exhaust pump 8 (load of the exhaust pump 8) is always kept constant. Further, in each step of the source gas supply process (S5) to the purge supply process (S8), the subtotal flow rate (0.7 slm) of the gas supplied into the process chamber 203 and exhausted from the exhaust port 230, and the process chamber 203 are set. The ratio with the subtotal flow rate (0.7 slm) of the gas exhausted from each vent pipe without going through is always constant (1: 1). As a result, the occurrence of pressure fluctuations in the processing chamber 203 can be suppressed, the stirring of foreign matters generated in the processing chamber 203 can be suppressed, and the adsorption of foreign matters to the substrate 200 can be suppressed.

5. Fifth Embodiment of the Invention In the present embodiment, for each gas type of processing gas supplied into the processing chamber 203, a processing gas supply line, a processing gas vent line, an inert gas supply line, and an inert gas vent line are provided. A set is provided. Each of these lines is configured to operate in cooperation with each other in the process of supplying the process gas into the process chamber 203 and the process of purging the process chamber 203.

  The configuration of the processing furnace 202 of the substrate processing apparatus as the fifth embodiment of the present invention will be described with reference to FIG. FIG. 11 is a schematic view showing an example of a processing furnace 202 of a single wafer MOCVD apparatus which is a substrate processing apparatus according to a fifth embodiment of the present invention.

  According to FIG. 11, the source gas supply pipe 1 a, the first inert gas supply pipe 2 a, the source gas vent pipe 1 b, and the first inert gas vent pipe are configured as a set 250. Such a set 250 is provided for each type of processing gas supplied into the processing chamber 203. For example, when supplying an activated gas as a processing gas into the processing chamber 203, although not shown, an activated gas supply pipe, a second inert gas supply pipe, an activated gas vent pipe, and a second inert gas vent pipe are shown. Are provided. Other configurations are the same as those of the third embodiment.

  Examples of flow rates of various gases in the cycle process of the present embodiment will be described with reference to FIG.

According to FIG. 12, in the source gas supply step (S5) according to the present embodiment, the source gas supply is performed by opening the valves 243a and 243i and closing the valves 243g and 243e while controlling the flow rate by the mass flow controllers 241a and 241e. The flow rate of the source gas supplied from the pipe 1a into the processing chamber 203 and exhausted from the exhaust port 230 is set to 0.5 slm, and the inert gas exhausted from the first inert gas vent pipe 2b without passing through the processing chamber 203 ( The flow rate of N ₂ ) is 0.5 slm.

Further, according to FIG. 12, in the purge step (S6) according to the present embodiment, the valves 243g and 243e are opened and the valves 243a and 243i are closed while the flow rate is controlled by the mass flow controllers 241a and 241e. The flow rate of the inert gas (N ₂ ) supplied from the active gas supply pipe 2 a into the processing chamber 203 and exhausted from the exhaust port 230 is 0.5 slm, and is exhausted from the source gas vent pipe 1 b without passing through the processing chamber 203. The flow rate of the raw material gas is 0.5 slm.

  Thus, in this embodiment, in the source gas supply step (S5) and the purge step (S6), the subtotal flow rate of the gas supplied into the processing chamber 203 and exhausted from the exhaust port 230 is always set to 0.5 slm. The subtotal flow rate of the gas exhausted from each vent pipe without going through the chamber 203 is always 0.5 slm, and the total flow rate of the gas exhausted by the exhaust pump 8 is always 1.0 slm. That is, the flow rate of the gas exhausted by the exhaust pump 8 (load of the exhaust pump 8) is always kept constant. Further, in the source gas supply step (S5) and the purge supply step (S6), the subtotal flow rate (0.5 slm) of the gas supplied into the processing chamber 203 and exhausted from the exhaust port 230 is not passed through the processing chamber 203. The ratio of the gas exhausted from each vent pipe to the subtotal flow rate (0.5 slm) is always constant (1: 1). As a result, the occurrence of pressure fluctuations in the processing chamber 203 can be suppressed, the stirring of foreign matters generated in the processing chamber 203 can be suppressed, and the adsorption of foreign matters to the substrate 200 can be suppressed.

6). Sixth Embodiment of the Invention In this embodiment, the subtotal flow rate of the gas supplied into the processing chamber 203 and exhausted from the exhaust port 230, and the gas exhausted from each vent pipe without passing through the processing chamber 203 The ratio to the subtotal flow rate is not 1: 1 but is always constant in each step of the source gas supply step (S5) and the purge step (S6).

  The configuration of the processing furnace of the substrate processing apparatus as the sixth embodiment of the present invention will be described with reference to FIG. FIG. 13 is a schematic view showing an example of a processing furnace of a single wafer MOCVD apparatus which is a substrate processing apparatus according to a sixth embodiment of the present invention.

  According to FIG. 13, in addition to the source gas supply pipe 1a, the first inert gas supply pipe 2a, the source gas vent pipe 1b, and the first inert gas vent pipe, as an inert gas supply line for dilution for diluting the source gas The inert gas supply pipe 2a ′ for dilution and the inert gas vent (bypass) pipe 2b ′ for dilution as the inert gas vent line for dilution are provided.

The inert gas supply pipe 2a ′ for dilution includes an inert gas supply unit 250e ′ for supplying an inert gas for dilution as a non-reactive gas, and a flow rate control means (flow rate) for controlling the supply flow rate of the inert gas. A mass flow controller 241e ′ as a controller is provided in order from the upstream side. For example, N ₂ is used as the inert gas. The inert gas supply pipe 2a ′ for dilution is joined to the source gas supply pipe 1a (downstream of the valve 243a) and the first inert gas supply pipe 2a (downstream of the valve 243e) via the valve 243e ′. Connected as a single unit.

  The inert gas vent pipe 2b 'for dilution is provided on the upstream side of the valve 243e' of the inert gas supply pipe 2a 'for dilution (that is, between the mass flow controller 241e' and the valve 243e '). The inert gas vent pipe 2b 'for dilution is connected between the pressure control means 7 of the exhaust pipe 231 and the exhaust pump 8 via a valve 243i'.

  Other configurations are the same as those of the fifth embodiment.

  Examples of flow rates of various gases in the cycle process of the present embodiment will be described with reference to FIG.

In the source gas supply step (S5) according to the present embodiment, the valves 243a, 243e ′, 243i are opened and the valves 243g, 243i ′, 243e are closed while the flow rate is controlled by the mass flow controllers 241a, 241e, 241e ′. The flow rate of the source gas supplied from the source gas supply pipe 1a into the processing chamber 203 and exhausted from the exhaust port 230 is 0.5 s.
1 m, the flow rate of the inert gas (N ₂ ) supplied from the dilution inert gas supply pipe 2 a ′ into the processing chamber 203 and exhausted from the exhaust port 230 is 0.2 slm, and does not pass through the processing chamber 203. The flow rate of the inert gas (N ₂ ) exhausted from the first inert gas vent pipe 2b is 0.5 slm.

In the purging step (S6) according to the present embodiment, the valves 243g, 243e ', 243e are opened and the valves 243a, 243i', 243i are closed while the flow rate is controlled by the mass flow controllers 241a, 241e, 241e '. The flow rate of the inert gas (N ₂ ) supplied from the first inert gas supply pipe 2a into the processing chamber 203 and exhausted from the exhaust port 230 is set to 0.5 slm, and the inert gas supply pipe for dilution 2a ′ is used as the processing chamber. The flow rate of the inert gas (N ₂ ) supplied into the exhaust gas 203 and exhausted from the exhaust port 230 is set to 0.2 slm, and the flow rate of the raw material gas exhausted from the raw material gas vent pipe 1b without passing through the processing chamber 203 is set to 0. 5 slm.

  Thus, in this embodiment, in the source gas supply process (S5) and the purge process (S6), the subtotal flow rate of the gas supplied into the processing chamber 203 and exhausted from the exhaust port 230 is always set to 0.7 slm. The subtotal flow rate of the gas exhausted from each vent pipe without passing through the chamber 203 is always 0.5 slm, and the total flow rate of the gas exhausted by the exhaust pump 8 is always 1.2 slm. That is, the flow rate of the gas exhausted by the exhaust pump 8 (load of the exhaust pump 8) is always kept constant. Further, in the raw material gas supply step (S5) and the purge supply step (S6), the subtotal flow rate (0.7 slm) of the gas supplied into the processing chamber 203 and exhausted from the exhaust port 230 does not pass through the processing chamber 203. The ratio of the gas exhausted from each vent pipe to the subtotal flow rate (0.5 slm) is always constant (7: 5). As a result, the occurrence of pressure fluctuations in the processing chamber 203 can be suppressed, the stirring of foreign matters generated in the processing chamber 203 can be suppressed, and the adsorption of foreign matters to the substrate 200 can be suppressed.

Note that the processing conditions in the case of forming the HfO ₂ film on the substrate 200 using the sequences shown in the examples of the first to sixth embodiments described above are, for example, processing temperature: 350 to 450 ° C. , Processing pressure: 50 to 200 Pa, organic liquid raw material (MO raw material) which is a source gas as the first processing gas: Hf (MMP) ₄ (Hf [OC (CH ₃ ) ₂ CH ₂ OCH ₃ ] ₄ (Tetrakis (1-methoxy-2-methyl-2-propoxy) hafnium)), supply flow rate of organic liquid raw material (MO raw material): 0.01 to 0.2 g / min, activated gas as second processing gas reaction gas becomes under _(oxidant): O 2 / Ar mixed gas, _{O 2} supply flow rate: 200~2000sccm, Ar supply flow rate: 0~1800sccm, are exemplified.

<Other Embodiments of the Present Invention>
In addition to the film formation described in the above embodiment, the present invention can be widely applied to the case where film formation is advanced by switching supply of two or more kinds of raw materials. For example, Ru or RuO ₂ film formation by Ru supply such as Ru (EtCp) ₂ and an oxidizing agent such as O ₂ activated by a remote plasma unit, or Hf source such as Hf- (MMP) ₄ and Si— (MMP) HfSiO film formation by alternately supplying Si raw materials such as ₄ and oxidizing agents such as H ₂ O and O ₃ .

  In addition, here, an example of repeating a film forming process by supplying a raw material and a reforming (impurity removing) process by supplying an active oxidizing species is shown, but the present invention is not limited to this. The present invention can also be applied to a case where a more periodic process is required, such as ALD in which the reaction gas supply is repeated. Further, as the oxidizing agent, an oxidizing species such as ozone that does not use a remote plasma unit may be used. In that case, an ozonizer is preferably used as the activation mechanism 9 as described above. Further, not only the combination of the raw material and the oxidizing agent, but also a combination of two or more raw materials necessary for film formation can be used as a means for suppressing pressure fluctuation.

  In the above embodiment, the CVD process is shown as an example. However, even in the ALD process, a pressure fluctuation occurs at the time of gas switching. Therefore, an effect of suppressing the pressure fluctuation can be expected by using this method. In this case, the shower head which is the gas mixing section can be replaced with a simple structure, and a case where the shower head is not used is also conceivable.

In addition, the gas used in the present invention is not limited to the gas described above, and can be appropriately selected from various types depending on the application. For example, the source gas is not limited to a gas containing Ru, Hf, Si, but Al, Ti, Sr, Y, Zr, Nb, Sn, Ba, La, Ta, Ir, Pt, W, Pb, Bi, and the like. Gas containing can be used. In addition to O radical, H ₂ O gas, and O ₃ gas, the reaction gas may be NO, N ₂ O, H ₂ O ₂ , N ₂ , NH ₃ , N ₂ H ₆ , or these by activating means. A gas containing these radical species and ion species generated by activation can be used.

  In the above, the case where the present invention is applied to the MOCVD method in which the supply of the source gas and the supply of the reaction gas are alternately repeated has been described. However, the present invention also supplies the source gas and the reaction gas at the same time. It can also be applied to the MOCVD method.

<Preferred embodiment of the present invention>
According to one aspect of the invention,
A processing chamber for processing the substrate;
A processing gas supply line for supplying a processing gas into the processing chamber;
An inert gas supply line for supplying an inert gas into the processing chamber;
An inert gas vent line that is provided in the inert gas supply line and exhausts the inert gas supplied to the inert gas supply line without being supplied into the processing chamber;
A first valve provided downstream of a portion of the inert gas supply line where the inert gas vent line is provided;
A second valve provided in the inert gas vent line;
There is provided a substrate processing apparatus having an exhaust line for exhausting the processing chamber.

Preferably,
When the inert gas is not supplied into the processing chamber from the inert gas supply line, the inert gas supplied to the inert gas supply line is exhausted from the inert gas vent line,
When supplying the inert gas from the inert gas supply line into the processing chamber, the flow of the inert gas supplied to the inert gas supply line is changed from the flow toward the inert gas vent line to the processing chamber. A controller for controlling each of the valves so as to switch to a flow toward

Preferably,
A processing gas vent line that is provided in the processing gas supply line and exhausts the processing gas supplied to the processing gas supply line without supplying it into the processing chamber;
A third valve provided downstream of a portion of the processing gas supply line where the processing gas vent line is provided;
A fourth valve provided in the processing gas vent line;
While alternately supplying the processing gas and the inert gas into the processing chamber,
When exhausting from the exhaust line while supplying the processing gas into the processing chamber from the processing gas supply line, the inert gas supplied to the inert gas supply line is not supplied into the processing chamber. Exhaust from the inert gas vent line,
When exhausting from the exhaust line while supplying the inert gas from the inert gas supply line to the processing chamber, the processing gas supplied to the processing gas supply line is not supplied to the processing chamber. And a controller for controlling each of the valves so as to exhaust air from the processing gas vent line.

Preferably,
The process gas supply line and the inert gas supply line are each provided with a flow rate controller,
The controller further includes:
A total flow rate of a flow rate of gas exhausted from the exhaust line when supplying the processing gas into the processing chamber and a flow rate of gas exhausted from the inert gas vent line;
A total flow rate of a flow rate of gas exhausted from the exhaust line when supplying the inert gas into the processing chamber and a flow rate of gas exhausted from the processing gas vent line;
To be constant, and
A ratio of a flow rate of gas exhausted from the exhaust line when supplying the processing gas into the processing chamber and a flow rate of gas exhausted from the inert gas vent line;
A ratio of a flow rate of gas exhausted from the exhaust line when supplying the inert gas into the processing chamber and a flow rate of gas exhausted from the process gas vent line;
Each flow controller is controlled so that becomes constant.

Preferably,
The controller further includes:
When the processing gas and the inert gas are alternately supplied into the processing chamber, the flow controller is controlled so that the total gas flow rate in the processing chamber is constant.

According to another aspect of the invention,
A processing chamber for processing the substrate;
A first processing gas supply line for supplying a first processing gas into the processing chamber;
A second processing gas supply line for supplying a second processing gas into the processing chamber;
An inert gas supply line for supplying an inert gas into the processing chamber;
An inert gas vent line that is provided in the inert gas supply line and exhausts the inert gas supplied to the inert gas supply line without being supplied into the processing chamber;
A first valve provided downstream of a portion of the inert gas supply line where the inert gas vent line is provided;
A second valve provided in the inert gas vent line;
An exhaust line for exhausting the processing chamber;
A substrate processing apparatus is provided.

Preferably,
A first process gas vent line that is provided in the first process gas supply line and exhausts the first process gas supplied to the first process gas supply line without being supplied into the process chamber;
A second processing gas vent line that is provided in the second processing gas supply line and exhausts the second processing gas supplied to the second processing gas supply line without being supplied into the processing chamber;
A third valve provided downstream of a portion of the first process gas supply line where the first process gas vent line is provided;
A fourth valve provided in the first process gas vent line;
A fifth valve provided downstream of a portion of the second process gas supply line where the second process gas vent line is provided;
A sixth valve provided in the second processing gas vent line;
While repeatedly supplying the first processing gas, the inert gas, the second processing gas, and the inert gas in this order into the processing chamber,
When the first processing gas is supplied into the processing chamber from the first processing gas supply line and when the second processing gas is supplied from the second processing gas supply line, the inert gas is used. Exhausting the inert gas supplied to the supply line from the inert gas vent line without supplying it into the processing chamber;
When supplying the inert gas into the processing chamber from the inert gas supply line, the first processing gas supplied to the first processing gas supply line is not supplied into the processing chamber. Each valve is evacuated from one process gas vent line and the second process gas supplied to the second process gas supply line is exhausted from the second process gas vent line without being supplied into the process chamber. A controller to control;
Have

Preferably,
The controller further includes:
When the first processing gas, the inert gas, the second processing gas, and the inert gas are repeatedly supplied in this order into the processing chamber, the total gas flow rate in the processing chamber is constant. The flow controller is controlled so that

According to yet another aspect of the invention,
Carrying a substrate into the processing chamber;
Processing the substrate in the processing chamber;
And carrying out the substrate after processing from the processing chamber,
The step of processing the substrate comprises:
Supplying a processing gas into the processing chamber from a processing gas supply line;
Supplying an inert gas into the processing chamber from an inert gas supply line,
In the step of supplying the processing gas,
The inert gas supplied to the inert gas supply line is exhausted from an inert gas vent line provided in the inert gas supply line without being supplied into the processing chamber,
In the step of supplying the inert gas, there is provided a method for manufacturing a semiconductor device, wherein the flow of the inert gas supplied to the inert gas supply line is switched from the flow toward the inert gas vent line to the flow toward the processing chamber. Provided.

  Preferably, in the step of supplying the processing gas and the step of supplying the inert gas, a total gas flow rate in the processing chamber is made constant.

According to yet another aspect of the invention,
Carrying a substrate into the processing chamber;
Processing the substrate in the processing chamber;
And carrying out the substrate after processing from the processing chamber,
In the step of processing the substrate,
Supplying a first processing gas into the processing chamber from a first processing gas supply line;
Supplying an inert gas into the processing chamber from an inert gas supply line;
Supplying a second processing gas from the second processing gas supply line into the processing chamber;
Supplying the inert gas into the processing chamber from the inert gas supply line;
As one cycle, this cycle is repeated several times,
In the step of supplying the first processing gas and the step of supplying the second processing gas, the inert gas supplied to the inert gas supply line is not supplied to the processing chamber and is not supplied. Exhaust from the inert gas vent line provided in the active gas supply line,
In the step of supplying the inert gas, a method of manufacturing a semiconductor device, wherein the flow of the inert gas supplied to the inert gas supply line is switched from a flow toward the inert gas vent line to a flow toward the processing chamber. Is provided.

  Preferably, when the cycle is repeated a plurality of times, the total gas flow rate in the processing chamber is constant.

According to yet another aspect of the invention,
Carrying a substrate into the processing chamber;
Processing the substrate in the processing chamber;
And carrying out the substrate after processing from the processing chamber,
The step of processing the substrate comprises:
Supplying a processing gas into the processing chamber from a processing gas supply line;
Supplying an inert gas into the processing chamber from an inert gas supply line,
In the step of supplying the processing gas, is the exhaust gas supplied to the inert gas supply line exhausted from an inert gas vent line provided in the inert gas supply line without being supplied into the processing chamber? Or the flow rate of the inert gas flowing from the inert gas supply line into the processing chamber is less than the step of supplying the inert gas,
In the step of supplying the inert gas, the flow of the inert gas supplied to the inert gas supply line is switched from a flow toward the inert gas vent line to a flow toward the process chamber, or the process A method for manufacturing a semiconductor device is provided in which the flow rate of the inert gas flowing from the inert gas supply line into the processing chamber is larger than the gas supplying step.

Preferably,
In the step of supplying the processing gas and the step of supplying the inert gas, the total gas flow rate in the processing chamber is made constant.

According to yet another aspect of the invention,
Carrying a substrate into the processing chamber;
Processing the substrate in the processing chamber;
And carrying out the substrate after processing from the processing chamber,
In the step of processing the substrate,
Supplying a first processing gas into the processing chamber from a first processing gas supply line;
Supplying an inert gas into the processing chamber from an inert gas supply line;
Supplying a second processing gas from the second processing gas supply line into the processing chamber;
The process of supplying the inert gas from the inert gas supply line into the processing chamber as one cycle, and repeating this cycle a plurality of times,
In the step of supplying the first processing gas and the step of supplying the second processing gas, the inert gas supplied to the inert gas supply line is supplied to the inert gas without supplying the inert gas into the processing chamber. Exhaust from an inert gas vent line provided in the gas supply line, or to reduce the flow rate of the inert gas flowing from the inert gas supply line to the processing chamber than the step of supplying the inert gas,
In the step of supplying the inert gas, the flow of the inert gas supplied to the inert gas supply line is switched from the flow toward the inert gas vent line to the flow toward the processing chamber, or the first gas A method of manufacturing a semiconductor device is provided in which the flow rate of the inert gas flowing from the inert gas supply line into the processing chamber is increased compared to the step of supplying the processing gas or the step of supplying the second processing gas.

Preferably,
When the cycle is repeated a plurality of times, the total gas flow rate in the processing chamber is made constant.

It is a system configuration schematic diagram of a processing furnace of a substrate processing apparatus in a 1st embodiment of the present invention. It is a system configuration schematic diagram of a processing furnace of a substrate processing apparatus in a 2nd embodiment of the present invention. It is a system configuration schematic diagram of a processing furnace of a substrate processing apparatus in a 3rd embodiment of the present invention. It is a graph which shows the example of a supply sequence of the process gas to a process chamber, (a) is a conventional sequence example, (b) is a sequence example in the 1st Embodiment of this invention. It is a graph which shows the example of a supply sequence of the process gas to a process chamber, (a) is the sequence example 1 of the Example in the 2nd Embodiment of this invention, (b) is 2nd implementation of this invention. It is sequence example 2 of the Example in a form. It is a sequence example of the Example in the 3rd Embodiment of this invention. It is a flowchart of the substrate processing process concerning the 1st Embodiment of this invention implemented as 1 process of the manufacturing process of a semiconductor device. (A) is a graph illustrating the change in the supply flow rate of the inert gas when the supply flow rate is increased or decreased by the mass flow controller, and (b) is the flow of the inert gas when the flow is switched by opening and closing the valve. It is a graph which illustrates supply flow rate change. It is a system configuration schematic diagram of a processing furnace of a substrate processing apparatus in a 4th embodiment of the present invention. It is a table | surface which each illustrates the flow volume of various gas in the cycle process of the 4th Embodiment of this invention. It is a system configuration schematic diagram of a processing furnace of a substrate processing apparatus in a 5th embodiment of the present invention. It is a table | surface which each illustrates the flow volume of various gas in the cycle process of the 5th Embodiment of this invention. It is a system configuration schematic diagram of a processing furnace of a substrate processing apparatus in a 6th embodiment of the present invention. It is a table | surface which each illustrates the flow volume of various gas in the cycle process of the 6th Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1a Source gas supply pipe 1b Source gas vent pipe 2a Inert gas supply pipe 2b Inert gas vent pipe 3a Reaction gas supply pipe 3b Activation gas vent pipe 3c Activation gas supply pipe 4a Second inert gas supply pipe 4b Second inert gas vent Pipe 200 Substrate 203 Processing chamber 231 Exhaust pipe 256 Main controller

Claims (5)

A processing chamber for processing the substrate;
A processing gas supply line for supplying a processing gas into the processing chamber;
An inert gas supply line for supplying an inert gas into the processing chamber;
An inert gas vent line that is provided in the inert gas supply line and exhausts the inert gas supplied to the inert gas supply line without being supplied into the processing chamber;
A first valve provided downstream of a portion of the inert gas supply line where the inert gas vent line is provided;
A second valve provided in the inert gas vent line;
And an exhaust line for exhausting the processing chamber. When the inert gas is not supplied into the processing chamber from the inert gas supply line, the inert gas supplied to the inert gas supply line is exhausted from the inert gas vent line,
When supplying the inert gas from the inert gas supply line into the processing chamber, the flow of the inert gas supplied to the inert gas supply line is changed from the flow toward the inert gas vent line to the process. The substrate processing apparatus according to claim 1, further comprising a controller that controls each of the valves so as to switch to a flow toward the room. A processing gas vent line that is provided in the processing gas supply line and exhausts the processing gas supplied to the processing gas supply line without supplying it into the processing chamber;
A third valve provided downstream of a portion of the processing gas supply line where the processing gas vent line is provided;
A fourth valve provided in the processing gas vent line;
While alternately supplying the processing gas and the inert gas into the processing chamber,
When exhausting from the exhaust line while supplying the processing gas into the processing chamber from the processing gas supply line, the inert gas supplied to the inert gas supply line is not supplied into the processing chamber. Exhaust from the inert gas vent line,
When exhausting from the exhaust line while supplying the inert gas from the inert gas supply line to the processing chamber, the processing gas supplied to the processing gas supply line is not supplied to the processing chamber. The substrate processing apparatus according to claim 1, further comprising a controller that controls each of the valves so as to exhaust air from the processing gas vent line. The process gas supply line and the inert gas supply line are each provided with a flow rate controller,
The controller further includes:
A total flow rate of a flow rate of gas exhausted from the exhaust line when supplying the processing gas into the processing chamber and a flow rate of gas exhausted from the inert gas vent line;
A total flow rate of a flow rate of gas exhausted from the exhaust line when supplying the inert gas into the processing chamber and a flow rate of gas exhausted from the processing gas vent line;
To be constant, and
A ratio of a flow rate of gas exhausted from the exhaust line when supplying the processing gas into the processing chamber and a flow rate of gas exhausted from the inert gas vent line;
A ratio of a flow rate of gas exhausted from the exhaust line when supplying the inert gas into the processing chamber and a flow rate of gas exhausted from the process gas vent line;
The substrate processing apparatus according to claim 3, wherein each of the flow rate controllers is controlled so as to be constant. Carrying a substrate into the processing chamber;
Processing the substrate in the processing chamber;
And carrying out the substrate after processing from the processing chamber,
The step of processing the substrate comprises:
Supplying a processing gas into the processing chamber from a processing gas supply line;
Supplying an inert gas into the processing chamber from an inert gas supply line,
In the step of supplying the processing gas,
The inert gas supplied to the inert gas supply line is exhausted from an inert gas vent line provided in the inert gas supply line without being supplied into the processing chamber,
In the step of supplying the inert gas, the flow of the inert gas supplied to the inert gas supply line is switched from the flow toward the inert gas vent line to the flow toward the processing chamber. Device manufacturing method.

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