KR20080090286A - Substrate processing apparatus and semiconductor device manufacturing method - Google Patents

Abstract

A substrate processing device and a method for manufacturing a semiconductor device are provided to improve performance, life duration, and yield by suppressing absorption of a foreign matter within a substrate. A substrate processing device includes a processing chamber(203), a process gas supply line, an inert gas supply line, an inert gas vent line, a first valve, a second valve and an exhaust line. The processing chamber processes a substrate. The process gas supply line supplies processing gas into the processing chamber. The inert gas supply line supplies inert gas into the processing chamber. The inert gas vent line is provided in the inert gas supply line and does not supply the inert gat supplied to the inert gas supply line but exhausts the inert gas. The first valve is provided in a down-stream side of an installation part of the inert gas vent line in the inert gas supply line. The second valve is provided in the inert gas vent line.

Description

SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD}

TECHNICAL FIELD This invention relates to the manufacturing method of a substrate processing apparatus and a semiconductor device.

As one step of a semiconductor device manufacturing step such as LSI, for example, a substrate processing step of forming a thin film on a substrate to be processed, such as a silicon wafer, may be performed. In the substrate processing step of forming a thin film on the substrate, for example, physical vapor deposition (PVD) method such as sputtering or chemical vapor deposition (CVD) method using a chemical reaction is used. It may be carried out. In general, the CVD method has been widely used as a film formation method because it has advantages that the PVD method has, including step coverage characteristics (step coating characteristics).

The above-mentioned substrate processing process is performed by the substrate processing apparatus provided with the processing chamber which processes a board | substrate, for example. In recent years, with the miniaturization of wirings formed in semiconductor devices and the reduction of the dimensions of semiconductor devices themselves, particularly demanding cleanliness is demanded of substrate processing apparatuses.

<Patent Documents> Japanese Patent Application Laid-Open No. 2004-296820

However, in the processing chamber of the substrate processing apparatus, particles adsorbed onto the substrate to be processed may be mixed into the processing chamber at the same time as the substrate is loaded. In addition, foreign matter may be adsorbed to the structure constituting the substrate processing apparatus or foreign matter may be generated from the structure.

In addition, the by-product accumulated in the processing chamber together with the substrate treatment may be foreign matter. In particular, in a substrate processing step of forming a thin film on a substrate, a film is easily formed on the inner wall of the processing chamber or a member in the processing chamber, and foreign matter is often generated by peeling the film due to some cause. In particular, in the CVD method, the film is formed depending on the temperature conditions. Therefore, when the temperature conditions are satisfied, a film causing foreign matter is likely to be formed in a place other than the substrate (for example, an inner wall of the processing chamber or a member in the processing chamber). . In addition, in the case of performing the CVD method, foreign matter may occur due to the gas phase reaction of the gas introduced into the processing chamber.

And the foreign material in these process chambers may be stirred during substrate processing, scattering the inside of a process chamber, and adsorb | sucking to a to-be-processed substrate. The semiconductor device manufactured by using the board | substrate which the foreign material adsorb | sucked may fall in the performance, the lifetime, or the yield may fall.

Accordingly, an object of the present invention is to provide a substrate processing apparatus and a manufacturing method of a semiconductor device capable of suppressing adsorption of foreign substances on a substrate by suppressing stirring of foreign substances generated in the processing chamber in view of the above-described problems. .

According to one aspect of the present invention, a processing chamber for processing a substrate, a processing gas supply line for supplying a processing gas into the processing chamber, an inert gas supply line for supplying an inert gas into the processing chamber, and an inert gas supply line are provided. And an inert gas vent line for exhausting the inert gas supplied to the inert gas supply line without supplying it into the processing chamber, and a first valve provided downstream from a portion where the inert gas vent line of the inert gas supply line is provided. And a second valve provided in the inert gas vent line, and an exhaust line for exhausting the inside of the processing chamber.

According to another aspect of the present invention, there is a step of bringing a substrate into the processing chamber, a step of processing the substrate in the processing chamber, and a step of carrying out the substrate after the treatment from the processing chamber. And a step of supplying a processing gas from the gas supply line into the processing chamber, and a step of supplying an inert gas from the inert gas supply line into the processing chamber. The step of supplying the processing gas includes: In the process of supplying the inert gas to the inert gas vent line provided in the inert gas supply line without supplying the inert gas into the processing chamber, the flow of the inert gas supplied to the inert gas supply line is inert. Flow to gas vent line The method for manufacturing a semiconductor device from switching to flow toward the inside of the processing chamber is provided.

According to the present invention, it is possible to provide a substrate processing apparatus and a manufacturing method of a semiconductor device capable of suppressing adsorption of foreign substances on a substrate by suppressing stirring of foreign substances generated in the processing chamber.

As described above, conventionally, in a substrate processing step of forming a thin film on a substrate, a film is easily formed not only on the substrate to be processed but also on the inner wall of the processing chamber or a member in the processing chamber. There were a lot. In particular, in the CVD method, when the temperature condition is satisfied, a film causing a foreign matter is easily formed at a place other than the substrate. Therefore, as described above, in the past, foreign substances in the processing chamber were agitated during substrate processing, and the inside of the processing chamber was scattered and adsorbed onto the substrate to be processed. As a result, the performance of the semiconductor device manufactured using the board | substrate with which the foreign material adsorb | sucked might fall, the lifetime might fall, or the yield might deteriorate.

Therefore, the inventors studied the cause of the agitation of foreign substances in the processing chamber. As a result, it was found that the pressure fluctuations in the processing chamber during the substrate processing step were one of the factors causing the foreign substances generated in the processing chamber to be stirred to adsorb the foreign substances onto the substrate to be processed. And the inventors found out that it is effective to suppress the generation of pressure fluctuations in the processing chamber during the substrate processing step in order to suppress the agitation of the foreign matter generated in the processing chamber, and came to complete the present invention. EMBODIMENT OF THE INVENTION Hereinafter, one Embodiment of this invention is described according to drawing.

1. First embodiment of the present invention

Hereinafter, as a process of the structure of the processing furnace 202 of the substrate processing apparatus as a 1st embodiment of this invention, and the manufacturing process of a semiconductor device, the substrate processing process and board | substrate performed by the processing furnace 202 are mentioned. Embodiments of the cycle treatment performed in the treatment step will be described sequentially.

(1) Configuration to processing

First, the structure of the processing furnace 202 of the substrate processing apparatus as 1st Embodiment of this invention is demonstrated using FIG. BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram which shows an example of the process of the single wafer type MOCVD (Metal Organic Chemical Vapor Deposition) apparatus which is a substrate processing apparatus which concerns on 1st Embodiment of this invention.

<Processing container>

The processing furnace 202 according to the present embodiment includes a processing container 201. The processing container 201 is formed of a metal container such as aluminum (Al) or stainless steel (SUS). The process chamber 203 which processes the board | substrate 200 is formed in the process container 201. Here, as the board | substrate 200, there exist a semiconductor silicon wafer, a compound semiconductor wafer, a glass substrate, etc., for example.

<Substrate return port>

Below the process chamber side wall 203a, the board | substrate conveyance port 247 which carries in and unloads the board | substrate 200 is provided in the process chamber 203 and outside. The board | substrate conveyance port 247 is comprised so that it may open and close by the gate valve 244 as a partition valve. The board | substrate conveyance port 247 is comprised so that the inside of the process chamber 203 can be kept airtight by closing the gate valve 244.

<Substrate holding means>

Inside the processing chamber 203, a hollow heater unit 206 is provided. The upper opening of the heater unit 206 is covered by a susceptor 6 as a substrate holding means (holding plate). Inside the heater unit 206, a heater 207 is provided as a heating means (heating mechanism). The substrate 200 mounted on the susceptor 6 can be heated by the heater 207. The heater 207 is controlled by the temperature controller 253 as the temperature control means (temperature controller) so that the temperature of the substrate 200 becomes a predetermined temperature. In addition, the heater unit 206 may be integrally formed with the heater 207 as long as it can heat the substrate 200.

The lower part of the heater unit 206 is provided so as to penetrate the bottom part of the processing container 201 while maintaining the airtight inside the processing chamber 201. The lower end of the heater unit 206 is supported from the bottom by the rotating mechanism 267 as the rotating means. Therefore, by operating the rotation mechanism 267, it is comprised so that the heater unit 206 in the process chamber 203 can be rotated and the board | substrate 200 on the susceptor 6 can be rotated. The reason for rotating the substrate 200 is to quickly process the substrate 200 in the process of supplying a processing gas (a raw material gas supply process or an activated gas supply process) to be described later in the plane of the substrate 200. This is to perform uniformly. On the other hand, if the desired uniformity can be obtained even if the substrate 200 does not rotate, the installation of the rotation means can be omitted.

The lifting mechanism 266 is provided below the rotating mechanism 267. The lifting mechanism 266 supports the rotating mechanism 267 from below. By operating the lifting mechanism 266, the rotating mechanism 267 and the heater unit 206 are lifted and configured to lift and lower the substrate 200 on the susceptor 6 in the processing chamber 203. For example, when carrying in and carrying out the board | substrate 200 in and out of the process chamber 203, the heater unit 206 moves (falls) to the board | substrate conveyance position of the lower side in the process chamber 203. In addition, when performing substrate processing, such as film-forming on the board | substrate 200, the heater unit 206 moves (rises) to the board | substrate processing position higher than a board | substrate conveyance position.

<First Process Gas Supply Line (Raw Gas Supply Line)>

The film forming raw material supply unit 250a for supplying an organic liquid raw material (MO (Metal Organic raw material)) as a film forming raw material, which is a material of raw material gas, as the first processing gas, to the outside of the processing chamber 203, and the liquid supply of the film forming raw material. A liquid mass flow controller 241a as a flow control means (liquid flow controller) for controlling the flow rate and a vaporizer 255 for vaporizing the film forming raw material are provided.

The film-forming raw material supply unit 250a, the liquid mass flow controller 241a, and the vaporizer 255 are connected in series by the source gas supply line 1a as a 1st process gas supply line (raw material gas supply line). . The source gas can be obtained by supplying the vaporizer 255 and the organic liquid raw material (MO raw material) from the film forming raw material supply unit 250a via the mass flow controller 241a, and vaporizing the organic liquid raw material in the vaporizer 255. have.

The downstream side of the vaporizer | carburetor 255 is connected to the shower head 236 mentioned later provided in the upper part of the process chamber 203 by the source gas supply pipe 1a. A valve 243a is provided between the vaporizer 255 of the source gas supply pipe 1a and the shower head 236, and the introduction (supply) of the source gas which enters into the process chamber 203 by opening and closing the valve 243a is performed. It can be controlled. When source gas is introduced into the processing chamber 203, an inert gas such as N ₂ gas may be used as a carrier gas. In addition, source gas is used in the source gas supply process mentioned later.

Inert Gas Supply Line

Outside the processing chamber 203, an inert gas supply unit 250e for supplying an inert gas as a non-reactive gas and a mass flow controller 241e as a flow control means (flow controller) for controlling the supply flow rate of the inert gas are provided. It is. The inert gas is, e.g., such as Ar, He, N _2.

The inert gas supply unit 250e and the mass flow controller 241e are connected in series by the inert gas supply pipe 2a as an inert gas supply line.

Moreover, the downstream side of the mass flow controller 241e is connected to the shower head 236 above the process chamber 203 by the inert gas supply pipe 2a. A valve 243e is provided between the mass flow controller 241e of the inert gas supply pipe 2a and the shower head 236, and introduction of the inert gas into the process chamber 203 by opening and closing the valve 243e ( Supply) can be controlled. Inert gas is used in a purge step described later.

<Reaction gas supply line>

Outside of the processing chamber 203, a reaction gas supply unit 250b for supplying a reaction gas serving as a raw material of the activation gas as the second processing gas, and a mass as a flow rate control means (flow controller) for controlling the supply flow rate of the reaction gas. The flow controller 241b and the activation mechanism 9 as an activation means for activating a reaction gas are provided.

As the reaction gas, for example, a gas containing O element such as oxygen or ozone is used as the oxidant to react with the source gas. Rarely, when it is desired to remove impurities in the film such as C (carbon) without oxidizing the formed film, such as wiring, a reducing agent such as NH ₃ , H ₂ may be used as the reaction gas.

The reaction gas supply unit 250b, the mass flow controller 241b, and the activation mechanism 9 are connected in series by the reaction gas supply pipe 3a. A valve 243b is provided between the mass flow controller 241b and the activating mechanism 9 so that the reaction gas introduction (supply) to the activating mechanism 9 can be controlled by opening and closing the valve 243b. It is.

The activation mechanism 9 is configured of, for example, a remote plasma unit for activating a reaction gas with plasma, an ozonizer for generating ozone, or the like. For example, when the activation mechanism 9 is configured as a remote plasma unit, an upstream side of the activation mechanism 9 includes an Ar gas supply unit 250c for supplying Ar gas, which is a plasma ignition gas for generating a plasma; And a mass flow controller 241c as a flow rate control means for controlling the Ar gas supply flow rate is provided. The Ar gas supply unit 250c and the mass flow controller 241c are connected in series by an Ar gas supply pipe 3d as an Ar gas supply line. The downstream side of the mass flow controller 241c is connected to the downstream side (that is, between the valve 243b and the activating mechanism 9) by the Ar gas supply pipe 3d than the valve 243b of the reaction gas supply pipe 3a. do. A valve 243c is provided between the mass flow controller 241c of the Ar gas supply pipe 3d and the activation mechanism 9, and the Ar gas is introduced into the activation mechanism 9 by opening and closing the valve 243c. It is possible to control the supply.

Ar gas is supplied from the Ar gas supply unit 250c to the activation mechanism 9 via the mass flow controller 241c, the Ar plasma is generated by the activation mechanism 9, and the mass from the reaction gas supply unit 250b. By supplying an oxidizing agent, for example, oxygen gas (O ₂ ), as a reaction gas, to the activation mechanism 9 via the flow controller 241b, and activating the reaction gas by the Ar plasma generated in the activation mechanism 9. In the activation mechanism 9, an activation gas containing oxygen radicals or the like can be obtained. Further, by supplying O ₂ to the activation mechanism 9 is the case where the configuration as ozonizer, the reaction gas supply unit via a mass flow controller (241b) activated from (250b) mechanism 9, activation mechanism 9 In the above, an activation gas containing ozone can be obtained. In addition, the activation gas which activated the reaction gas is used in the activation gas supply process mentioned later.

<2nd process gas supply line (activation gas supply line)>

The downstream side of the activation mechanism 9 is connected to the shower head 236 above the processing chamber 203 by an activation gas supply pipe 3c serving as a second processing gas supply line (activation gas supply line). A valve 243f is provided in the activation gas supply pipe 3c, and opening and closing of the valve 243f enables control of introduction of an activation gas containing oxygen radicals, ozone, or the like into the processing chamber 203. In addition, the activation gas containing oxygen radical, ozone, etc. is used in the activation gas supply process mentioned later.

<Shower head>

The shower head 236 is provided above the processing chamber 203. The shower head 236 includes a dispersion plate 236b provided with a plurality of ventilation holes (through holes) 240b and a shower plate 236a provided with a plurality of ventilation holes (through holes) 240a. The dispersion plate 236b faces the ceiling surface of the shower head 236, that is, the inlet of the source gas supply pipe 1a, the inlet of the inert gas supply pipe 2a, and the inlet of the activating gas supply pipe 3c. It is installed to The shower plate 236a is provided on the downstream side of the dispersion plate 236b so as to face the dispersion plate 236b and to face the susceptor 6. A buffer space 237 is formed between the upper portion (ceiling part) of the shower head 236 and the dispersion plate 236b, and a buffer space 238 is configured between the dispersion plate 236b and the shower plate 236a. It is.

The shower head 236 provided in the upper portion of the processing chamber 203 has a source gas supply pipe 1a, an activation gas supply pipe 3c, and an inert gas supply pipe (in a source gas supply step, an activation gas supply step, and a purge step described later). The supply port which distributes the gas supplied from 2a) to the process chamber 203, and supplies a gas uniformly with respect to the board | substrate 200 in a substrate processing position is comprised.

<Exhaust vent>

The exhaust port 230 which exhausts the inside of the process chamber 203 is provided in the side opposite to the board | substrate conveyance port 247 as the lower side of the process chamber side wall 203a. The exhaust port 230 is connected to an exhaust pump 8 as an exhaust device by an exhaust pipe 231 as an exhaust line. Between the exhaust port 230 and the exhaust pump 8, pressure control means 7 such as APC (Auto Pressure Controller) for controlling the pressure in the processing chamber 203 is provided. The downstream side of the exhaust pump 8 is in communication with a decontamination apparatus (not shown). The exhaust system is constituted by the exhaust port 230 and the exhaust pipe 231.

<Commutation board>

The rectifying plate 205 is mounted on the susceptor 6 as the substrate holding means (holding plate). An opening 205a for exposing the substrate 200 mounted on the susceptor 6 is provided inside the rectifying plate 205, and the rectifying plate 205 has a ring shape. The gas supplied from the shower head 236 to the substrate 200 at the substrate processing position passes through the gap between the outer circumferential portion of the rectifying plate 205 and the processing chamber sidewall 203a, and the processing chamber 203 is provided by the exhaust port 230. Exhaust to the outside. In addition, the space | interval of the outer periphery of the rectifying plate 205 and the process chamber side wall 203a is set to the magnitude | size which the gas supplied from the shower head 236 is equally supplied on the board | substrate 200. FIG.

On the other hand, when there is a place where a film is not desired to be formed on the substrate 200, such as an outer circumferential portion of the substrate 200, for example, the rectifying plate 205 may have a role of preventing the film formation on the substrate 200. Do. That is, the inner diameter of the opening 205a of the rectifying plate 205 is set small so that the outer peripheral portion of the substrate 200 is covered with the inner portion of the rectifying plate 205 from the upper side of the substrate 200 during film formation. You may comprise. In this case, since the board | substrate 200 is arrange | positioned between the susceptor 6 and the rectifying plate 205, in order to be able to convey a board | substrate, the rectifying plate 205 is installed in the process chamber 203, for example. It may be previously fixed to the height of a substrate processing position, and may be comprised so that the susceptor 6 which mounted the board | substrate 200 may be raised from the bottom of the rectifying plate 205. FIG. Alternatively, a mechanism for elevating the rectifying plate 205 may be provided so that the rectifying plate 205 is lowered from above the substrate 200 placed on the susceptor 6.

<Vent line>

A raw material gas vent pipe as a first processing gas vent line (raw material gas vent line) is located upstream of the valve 243a of the raw material gas supply pipe 1a (that is, between the vaporizer 255 and the valve 243a). (1b) is provided. The source gas vent pipe 1b is connected between the pressure control means 7 of the exhaust pipe 231 and the exhaust pump 8 via a valve 243g.

Moreover, the activation gas vent as a 2nd process gas vent line (reactive gas vent line) is located in the valve 243f upstream (that is, between the activation mechanism 9 and the valve 243f) of the activation gas supply pipe 3c. The pipe 3b is provided. The activation gas vent pipe 3b is connected between the pressure control means 7 of the exhaust pipe 231 and the exhaust pump 8 via the valve 243h.

<Controller>

In the substrate processing apparatus, each valve 243a-243h, each mass flow controller 241a-241e, the temperature controller 253, the pressure control means 7, the vaporizer 255, the activation mechanism 9, the rotation mechanism ( The main controller 256 which controls the operation | movement of each part which comprises substrate processing apparatuses, such as 267 and the lifting mechanism 266, is provided. By controlling the opening and closing of the valve and the like, the main controller 256 controls the source gas supply step, the activation gas supply step, and the purge step, which will be described later, to be repeated a plurality of times in succession.

(2) substrate processing process

Next, the procedure for depositing a thin film on the substrate 200 as the substrate processing process according to the first embodiment of the present invention will be described with reference to FIG. 7. In addition, the substrate processing process which concerns on 1st Embodiment is performed by the process furnace of the above-mentioned substrate processing apparatus as one process of the manufacturing process of a semiconductor device. In addition, in the following description, the operation | movement of each part which comprises a substrate processing apparatus is controlled by the main controller 256. As shown in FIG.

<Substrate import process>

First, the heater unit 206 shown in FIG. 1 is dropped to the board | substrate conveyance position. And the gate valve 244 is opened and the board | substrate conveyance port 247 is opened. Then, the substrate 200 is loaded into the processing chamber 203 by the wafer transfer machine (S1).

<Substrate mounting process>

Next, the board | substrate 200 carried in in the process chamber 203 is mounted on the protrusion pin which is not shown in figure. Then, the gate valve 244 is closed to seal the inside of the processing chamber 203 and the heater unit 206 is raised to the substrate processing position above the substrate transfer position. Thereby, the board | substrate 200 is mounted on the susceptor 6 from a protrusion pin (S2).

<Heating process>

Subsequently, while rotating the substrate 200 by the substrate rotating unit, the electric power supplied to the heater 207 is controlled to uniformly heat the substrate 200 so that the temperature of the substrate 200 becomes a predetermined temperature (S3).

<Pressure adjustment process>

Simultaneously with the temperature raising step, the inside of the processing chamber 203 is evacuated by the exhaust pump 8, and the pressure control means 7 controls the inside of the processing chamber 203 to have a predetermined processing pressure (S4). When addition, transport or when the substrate heating of the substrate 200, wherein an inert gas such as Ar, He, N ₂ in the opening valve (243e) provided on the inert gas supply pipe (2a), the processing chamber 203, a sloppy exhaust pipe ( Exhaust from the 231 can prevent particles (foreign substances) and metal contaminants from adhering to the substrate 200.

Raw material gas supply process

When the temperature of the substrate 200 and the pressure in the processing chamber 203 reach the predetermined processing temperature and the predetermined processing pressure, respectively, the raw material gas as the first processing gas is supplied into the processing chamber 203 (S5).

That is, the organic liquid raw material (MO raw material) as the film forming raw material serving as the material of the raw material gas as the first processing gas is controlled from the film forming raw material supply unit 250a to the vaporizer 255 while controlling the flow rate by the mass flow controller 241a. The organic liquid raw material is vaporized by the vaporizer | carburetor 255, and raw material gas is generated. Then, the valve 243a provided in the source gas supply pipe 1a is opened, and the source gas generated by the vaporizer 255 is supplied onto the substrate 200 via the shower head 236. At this time, the valve 243g provided in the source gas vent pipe 1b is closed. Further, when supplying a source gas into the processing chamber 203, opening the valve (243e), a source gas supplied into the inert gas (N _2, etc.), always flows, and the processing chamber 203 from the inert gas supply unit (250e) Allow to stir. This is because the source gas is easily stirred when diluted with an inert gas.

The source gas supplied from the source gas supply pipe 1a and the inert gas supplied from the inert gas supply pipe 2a are mixed in the buffer space 237 of the shower head 236 and provided in the dispersion plate 236b. It is led to the buffer space 238 via the hole 240b, and is supplied in the shower state on the substrate 200 on the susceptor 6 via a plurality of holes 240a provided in the shower plate 236a. The mixed gas supplied on the substrate 200 passes between the outer periphery of the rectifying plate 205 and the processing chamber sidewall 203a and is exhausted from the exhaust pipe 231 via the exhaust port 230. By supplying this mixed gas for a predetermined time, first, a thin film of several angstroms to several tens of angstroms (several to several tens of atomic layers) is formed on the substrate 200. Meanwhile, by maintaining the substrate 200 at a predetermined temperature (film formation temperature) while rotating the substrate 200, a uniform film can be formed over the surface of the substrate 200.

After supplying the source gas to the substrate 200 for a predetermined time, the valve 243a provided in the source gas supply pipe 1a is closed to stop the supply of the source gas to the substrate 200. On the other hand, at this time, the valve 243g provided in the source gas vent pipe 1b is opened, and the source gas is exhausted by the source gas vent pipe 1b so as to bypass the process chamber 203, and from the vaporizer 255, It is preferable not to stop the supply of the source gas (that is, the generation of the source gas in the vaporizer 255). Although it takes time to vaporize the liquid raw material and stably supply the vaporized raw material gas, the next raw material gas is allowed to flow through the process chamber 203 without stopping the supply of the raw material gas from the vaporizer 255. This is because, in the supplying step, the source gas can be immediately supplied to the substrate 200 by simply switching the flow.

<Purge process>

The purge in the process chamber 203 is performed by closing the valve 243a provided in the source gas supply pipe 1a (S6). That is, in the source gas supply process, the valve 243e is kept open, and since the inert gas (N _2, etc.) is always supplied from the inert gas supply pipe 2a into the processing chamber 203, the valve 243a is closed. By stopping the supply of source gas to the substrate 200, the inside of the processing chamber 203 is purged at the same time. The inert gas supplied into the processing chamber 203 passes between the outer circumferential portion of the rectifying plate 205 and the processing chamber side wall 203a and is exhausted from the exhaust pipe 231 via the exhaust port 230. As a result, residual gas in the processing chamber 203 is removed.

Activation Gas Supply Process

After performing the purge process for a predetermined time, the activation gas is supplied into the process chamber 203 as the second process gas (S7).

That is, first, the valve 243c provided in the Ar gas supply pipe 3d is opened, and the activation mechanism (while controlling the Ar gas as the plasma ignition gas from the Ar gas supply unit 250c by the mass flow controller 241c) is performed. 9), and activated (plasma excited) by the activation mechanism 9 to generate an Ar plasma. Subsequently, the valve 243b provided in the reaction gas supply pipe 3a is opened, and the O ₂ gas as the reaction gas (oxidant), which becomes a raw material of the activation gas as the second processing gas, is released from the reaction gas supply unit 250b by the mass flow controller. It supplies to the activation mechanism 9, controlling flow volume by 241b. Then, the Ar plasma generated in the activation mechanism 9 activates the O ₂ gas as the reaction gas, thereby obtaining an activation gas containing oxygen radicals. Next, the valve 243f provided in the activation gas supply pipe 3c is opened, the activation gas is supplied from the activation mechanism 9 into the processing chamber 203, and the activation gas is provided on the substrate 200 via the shower head 236. To supply. At this time, the valve 243h provided in the activation gas vent pipe 3b is closed.

On the other hand, ozone (O ₃₎ to the case of trying to get, open the valve (243b) installed in the reaction gas supply pipe (3a), a mass flow controller for the oxygen gas as the reaction gas from the reaction gas supply unit (250b) as an activator gas Supplying to the activation mechanism 9 by flow control of 241b, and obtains ozone (O3) as an activation gas. Then, the valve 243f provided in the activation gas supply pipe 3c is opened, the ozone O ₃ is supplied from the activation mechanism 9 into the process chamber 203, and the upper surface of the substrate 200 is provided via the shower head 236. Supply ozone (O ₃ ) Also at this time, the valve 243h provided in the activation gas vent pipe 3b is closed.

The activation gas supplied on the substrate 200 passes between the outer circumferential portion of the rectifying plate 205 and the processing chamber sidewall 203a and is exhausted from the exhaust pipe 231 via the exhaust port 230.

While supplying the activating gas into the processing chamber 203, the substrate 200 is rotated while the surface of the substrate 200 is maintained by a heater 207 at a predetermined temperature (for example, the same as the deposition temperature condition of the CVD). do. As a result, impurities such as C and H can be quickly and uniformly removed from the thin film of several angstroms to several tens of angstroms (tensions to several tens of atomic layers) formed on the substrate 200 in the source gas supply process.

After supplying the activation gas to the substrate 200 for a predetermined time, the valve 243f provided in the activation gas supply pipe 3c is closed to stop the supply of the activation gas to the substrate 200. At this time, the valve 243h provided in the activating gas vent pipe 3b is opened to exhaust the activating gas from the activating gas vent pipe 3b so as to bypass the processing chamber 203 and from the activating mechanism 9. It is preferable not to stop the supply of the activation gas (that is, the generation of the activation gas in the activation mechanism 9). Although it takes time to generate an activating gas containing, for example, oxygen radicals from the reaction gas and supply it stably, the processing chamber 203 is bypassed without stopping the supply of the activating gas from the activating mechanism 9. This is because, in the next activation gas supplying step, the activation gas can be immediately supplied to the substrate 200 by simply switching the flow.

In addition, it is preferable to perform a source gas supply process and an activation gas supply process at substantially the same temperature (that is, it is preferable to make it constant, without changing the set temperature of the heater 207). Since there is no temperature fluctuation, thermal expansion and thermal contraction of peripheral members such as the shower head 236, the susceptor 6, the rectifying plate 205, and the like can be suppressed, and generation of particles (foreign material) from the peripheral members can be suppressed. to be. It is also possible to suppress the protruding of the metal (metal contamination) from the metal parts subjected to surface treatment (coating) or the like constituting the substrate processing apparatus by eliminating the temperature fluctuation.

<Purge process>

The inside of the process chamber 203 is purged by closing the valve 243f provided in the activation gas supply pipe 3c (S8). That is, in the activation gas supply process, the valve 243e is left open, and since the inert gas (N ₂ or the like) is always supplied from the inert gas supply unit 250e into the processing chamber 203, the valve 243f is opened. By closing and stopping the supply of the activation gas to the substrate 200, the purge in the processing chamber 203 is simultaneously performed. The inert gas supplied into the processing chamber 203 passes between the outer peripheral portion of the rectifying plate 205 and the processing chamber sidewall 203a and is exhausted from the exhaust pipe 231 via the exhaust port 230. As a result, residual gas in the processing chamber 203 is removed.

After purging the processing chamber 203 for a predetermined time, the valve 243g provided in the source gas vent pipe 1b is closed, the valve 243a provided in the source gas supply pipe 1a is opened, and the shower head 236 is interposed. By supplying the raw material gas on the substrate 200 again (S5). The thin film of several angstroms to several tens of angstroms (several to several tens of atomic layers) is again deposited on the thin film formed by performing the above-described source gas supply process purge process activation gas supply process purge process.

<Thin Film Forming Step (Repeating Step)>

As described above, the raw material gas supply process purge process activation gas supply process purge process is set as one cycle, and the cycle process which repeats this cycle several times is performed (S9). As a result, a thin film having a desired thickness having very low mixing of impurities such as CH and OH can be formed on the substrate 200.

<Substrate carrying out process>

After the thin film of desired thickness is formed on the board | substrate 200, rotation of the board | substrate 200 by the rotation mechanism 267 is stopped, and a desired thickness is performed in the order opposite to the pressure adjustment process from the board | substrate loading process mentioned above. The substrate 200 on which the thin film is formed is taken out from the process chamber 203 (S10). By the above, a substrate processing process is completed.

(3) Example

Subsequently, with respect to the detailed sequence of the cycle process which repeats this cycle several times, using source gas supply process-purge process-activation gas supply process-purge process as 1 cycle-Implementation according to 1st Embodiment of this invention is carried out. An example is demonstrated with a comparative example.

Comparative Example

First, prior to describing the example of the cycle process according to the first embodiment, the conventional cycle process will be described as a comparative example. 4A is a detailed sequence diagram of a comparative example illustrating a conventional cycle process. As shown in Fig. 4 (a), in the conventional cycle process in accordance with this comparative example, (1) the supply of which the raw material gas vaporized MO raw material (the raw material gas supply step), (2) an inert gas (N ₂ gas ) Supply (purge process), (3) activating gas (O ₂ / Ar mixed gas) activating the oxidizing agent (O ₂ ) (activating gas supply process), (4) inert gas supply (purge process) This cycle is repeated a plurality of times.

Here, this comparative example is implemented by the substrate processing apparatus of 1st Embodiment shown in FIG. 1 mentioned above. That is, the source gas is supplied from the source gas supply pipe 1a, the inert gas is supplied from the inert gas supply pipe 2a, and the reaction gas is supplied from the reaction gas supply pipe 3a, respectively. Further, when supplying the raw material gas, the N ₂ gas is used as a carrier gas. In addition, the reaction gas is activated by the activation mechanism 9 to become an activation gas, and is supplied from the activation gas supply pipe 3c.

In this comparative example, the source gas supply flow volume from the source gas supply pipe 1a is always constant to b1. Therefore, by opening the valve 243a and closing the valve 243g, the supply flow rate of the source gas into the process chamber 203 in the source gas supply process is b1. In addition, by closing the valve 243a and opening the valve 243g, the source gas bypasses the process chamber 203 and is exhausted from the source gas vent pipe 1b. Therefore, in the activation gas supply process and the purge process, The supply flow rate of the source gas into the processing chamber 203 is b2 (= 0). In addition, the supply flow volume b1 of source gas is a total flow volume containing carrier gas.

In addition, in this comparative example, the supply flow volume of the activation gas from the activation gas supply pipe 3c is also constant as c1 at all times. Therefore, by opening the valve 243f and closing the valve 243h, the supply flow rate of the activation gas into the process chamber 203 in the activation gas supply process is c1. In addition, by closing the valve 243f and opening the valve 243h, the activating gas bypasses the process chamber 203 and is exhausted from the activating gas vent pipe 3b. Thus, in the source gas supply process and the purge process, The supply flow rate of the activation gas into the processing chamber 203 is c2 (= 0).

In this comparative example, the supply flow rate of the inert gas from the inert gas supply pipe 2a is also always constant at a1. Therefore, by opening the valve 243e, the supply flow rate of the inert gas into the process chamber 203 in the purge step becomes a1. In addition, by closing the valve 243e, the supply flow rate of the inert gas into the process chamber 203 in the source gas supply step and the activation gas supply step becomes a2 (= 0).

In the above, in order to make the total flow volume of the gas supplied into the process chamber 203 constant, b1 (raw material gas supply flow rate), c1 (activation gas supply flow rate), and a1 (inert gas supply flow rate) are the same (b1 The mass flow controllers 241a to 241e are controlled to be = c1 = a1).

However, as shown in the pressure graph (pressure in the processing chamber) shown below in Fig. 4A, the moment of opening the valve 243e (that is, between the source gas supply process and the activation gas supply process), At the start), it was found that pressure fluctuations occurred in the processing chamber 203. According to the knowledge of the inventors, the pressure fluctuations occurring in the processing chamber 203 cause the foreign substances in the processing chamber 203 to stir and adsorb foreign substances to the substrate 200 as described above.

Therefore, the inventors earnestly studied the cause of pressure fluctuations in the processing chamber 203. As a result, when the valve 243e is closed at the end of the purge process, the pressure in the inert gas supply pipe 2a that is upstream of the valve 243e increases, and a pressure difference occurs between the upstream and downstream of the valve 243e. When opening the valve 243e with the resumption of the process, it was found that the pressure difference generated in the inert gas supply pipe 2a is transmitted in the form of a pulse in the processing chamber 203, whereby a pressure fluctuation occurs in the processing chamber 203. Therefore, when the pressure fluctuation speed, which is the pressure difference transmitted in the pulse shape in the processing chamber 203, is faster than the response speed of the pressure control means 7, or the pressure difference transmitted in the processing chamber 203 permits the adjustment of the pressure control means 7. When it is larger than the range, it has been found that the pressure difference may not be absorbed by the pressure control means 7. In addition, when the valve 243e is closed, the pressure in the inert gas supply pipe 2a that is upstream from the valve 243e is about the same as the secondary pressure of the regulator (not shown) of the inert gas supply unit 250e (10). ⁵ Pa class). In addition, when the valve 243e is closed, the pressure in the inert gas supply pipe 2a downstream from the valve 243e is considered to be about the same as the pressure in the processing chamber 203 (10 ³ Pa or less). That is, when the valve 243e is closed, it is considered that a pressure difference of 10 ² Pa or more occurs between the upstream side and the downstream side than the valve 243e in the inert gas supply pipe 2a.

<Example>

On the other hand, as a result of earnestly examining by the present inventors, even if it uses the structure of the substrate processing apparatus shown in FIG. 1, when supply of gas is controlled like the Example demonstrated below, generation | occurrence | production of the pressure fluctuation in the process chamber 203 is suppressed. It turned out to be possible.

FIG.4 (b) is a detailed sequence diagram which shows the example of the cycle process which concerns on 1st Embodiment which can suppress generation | occurrence | production of the pressure fluctuation in the process chamber 203. FIG.

As shown in Fig. 4 (b), in the cycle process in accordance with this embodiment, (1) feed (raw material gas supply step), (2) in which the raw material gas and an inert gas (N ₂ gas) vaporizing the MO material Supply of inert gas (purge process), (3) Activation gas (O ₂ / Ar mixed gas) activating oxidant (O ₂ ) and supply of inert gas (activation gas supply process), (4) Supply of inert gas ( Purge process) is set to 1 cycle, and this cycle is repeated multiple times. That is, in the comparative example, the supply of the inert gas from the inert gas supply pipe 2a to the inside of the processing chamber 203 was stopped in the supply gas supply step and the activation gas supply step. The gas supply step differs from the comparative example in that the gas is supplied continuously without stopping the supply of the inert gas from the inert gas supply pipe 2a to the process chamber 203. And also in this embodiment, when performing a source gas supply process, an activation gas supply process, and a purge process, the supply flow volume of an inert gas is changed so that all the gas flow rates supplied into the process chamber 203 may become constant. The point differs from the comparative example.

Here, this example is also implemented by the substrate processing apparatus of the first embodiment shown in FIG. 1 described above. That is, the source gas is supplied from the source gas supply pipe 1a, the inert gas is supplied from the inert gas supply pipe 2a, and the reaction gas is supplied from the reaction gas supply pipe 3a, respectively. Further, when supplying the raw material gas, the use of N ₂ gas as a carrier gas. In addition, the reaction gas is activated by the activation mechanism 9 and supplied from the activation gas supply pipe 3c as the activation gas.

In this embodiment, the supply flow rate of the source gas from the source gas supply pipe 1a is always constant as b1 as in the comparative example. Therefore, by opening the valve 243a and closing the valve 243g, the supply flow rate of the source gas to the inside of the processing chamber 203 in the source gas supply process is b1. In addition, by closing the valve 243a and opening the valve 243g, the source gas bypasses the process chamber 203 and is exhausted from the source gas vent pipe 1b. Therefore, in the activation gas supply process and the purge process, The supply flow rate of the source gas into the process chamber 203 is b2 (= 0). In addition, the supply flow volume b1 of source gas is a total flow volume containing carrier gas.

In the present embodiment, the supply flow rate of the activation gas from the activation gas supply pipe 3c is also constant as c1 at all times as in the comparative example. Therefore, by opening the valve 243f and closing the valve 243h, the supply flow rate of the activation gas to the process chamber 203 in the activation gas supply process is c1. In addition, by closing the valve 243f and opening the valve 243h, the activating gas bypasses the process chamber 203 and is exhausted from the activating gas vent pipe 3b. Thus, in the source gas supply process and the purge process, The supply flow rate of the activating gas to the processing chamber 203 is c2 (= 0). 4B illustrates a sequence diagram when c1> b1.

In contrast, in the present embodiment, the supply flow rate of the inert gas from the inert gas supply pipe 2a is different from that of the comparative example. That is, the supply flow rate of the inert gas in the purge process is a1 (≠ 0), the supply flow rate of the inert gas in the source gas supply process is a2 (≠ 0), and the inert gas in the activation gas supply process. The mass flow controller 241e is adjusted so that the supply flow rate is a3 (? 0). That is, the supply flow rate is changed by supplying continuously, without stopping supply of the inert gas from the inert gas supply line 2a to the process chamber 203 at the time of a source gas supply process and an activation gas supply process.

Then, the sum (a2 + b1) of the supply flow rate a2 of the inert gas and the supply flow rate b1 of the source gas in the source gas supply step, the inert gas supply flow rate a3 and the activation gas in the activation gas supply step The mass flow controllers 241a to 241e are arranged such that the sum a3 + c1 of the supply flow rates c1 and the inert gas supply flow rates a1 are the same in the purge step (a2 + b1 = a3 + c1 = a1), respectively. I'm in control.

By controlling the supply flow rate of the gas in this manner, it is possible to suppress the occurrence of pressure fluctuations in the processing chamber 203, thereby suppressing the agitation of foreign matters generated in the processing chamber 203, and thus to the substrate 200. Adsorption of foreign substances can be suppressed.

That is, according to this embodiment, in the source gas supply process and the activation gas supply process, the inert gas is continuously supplied from the inert gas supply pipe 2a into the processing chamber 203, and the valve provided in the inert gas supply pipe 2a ( 243e) remains open and no opening and closing operation is performed. Thereby, it is thought that a pressure difference does not arise in the inert gas supply pipe 2a, and the generation of the pressure fluctuations in the process chamber 203 can be suppressed.

On the other hand, also in this embodiment, when a3 (supply flow rate of inert gas in an activation gas supply process) is set to 0, the opening / closing operation | movement of the valve 243e will be made, and it will be resumed by resuming a purge process [ When the supply flow rate of the inert gas changes from a3 (= 0) to a1 (≠ 0), the pressure difference generated in the inert gas supply pipe 2a is transmitted to the processing chamber 203, causing a pressure variation in the processing chamber 203. I think there is a case.

2. Second Embodiment of the Invention

Next, the structure of the processing furnace 202 of the substrate processing apparatus as the second embodiment of the present invention, and an example of cycle processing of the substrate processing step performed by the processing furnace 202 will be described sequentially.

(1) Configuration to processing

First, the structure of the process furnace of the substrate processing apparatus as 2nd Embodiment of this invention is demonstrated using FIG. 2 is a schematic view showing an example of a processing furnace of a sheet type MOCVD apparatus which is a substrate processing apparatus according to a second embodiment of the present invention.

The processing furnace 202 in the second embodiment differs from the processing furnace 202 in the first embodiment in the second embodiment, as well as the source gas supply pipe 1a and the activation gas supply pipe 3c. The inert gas vent pipe 2b as the inert gas vent line is also provided in the inert gas supply pipe 2a. That is, as shown in FIG. 2, the inert gas vent pipe 2b is provided in the upstream side (namely, between the mass flow controller 241e and the valve 243e) of the valve 243e of the inert gas supply pipe 2a. have. The inert gas vent pipe 2b is connected between the pressure control means 7 of the exhaust pipe 231 and the exhaust pump 8 via the valve 243i. The other structure is the same as that of the process furnace 202 which concerns on 1st Embodiment.

On the other hand, for the gas supply pipe (raw material gas supply pipe 1a, activating gas supply pipe 3c) of the processing gas (raw material gas, activating gas) having reactivity that needs to precisely control the gas supply flow rate, the vent line [Raw gas vent pipe 1b, activating gas vent pipe 3b] may be provided. By controlling the opening and closing of the valves, the gas supply pipes (raw material gas supply pipe 1a and activating gas supply pipe 3c) are flow rate control mechanisms, respectively, so that the supply destination of each gas can be switched from the vent line side to the processing chamber 203. This is because the high-speed switching can be realized rather than installing. However, normally, the vent line is not installed in the inert gas supply pipe 2a. Since the inert gas is not a reactive gas, the flow rate does not directly contribute to the reaction system, and it is not necessary to precisely control the supply flow rate of the gas, and a new vent line of the inert gas is provided. The main reason is that the cost of the substrate processing apparatus increases.

In contrast, in the second embodiment, the inert gas vent pipe 2b is also provided in the inert gas supply pipe 2a, and the inert gas supply destination is also fast in response to the high-speed switching of the supply destination of the processing gas (raw material gas, the activating gas). It is comprised so that generation | occurrence | production of the pressure fluctuations in the process chamber 203 can be suppressed by comprised so that switching to the process is possible.

(2) Example of Cycle Processing

The difference between the substrate processing step according to the second embodiment and the substrate processing step according to the first embodiment lies in the cycle processing performed in the substrate processing step. Other than that is the same as the substrate processing process which concerns on 1st Embodiment. Hereinafter, the sequence example 1 and the sequence example 2 in the Example of 2nd Embodiment are demonstrated sequentially using FIG. 5 (a) and 5 (b) are Sequence Example 1 and Sequence Example 2 in the example of the second embodiment.

In addition, a present Example is implemented by the substrate processing apparatus of 2nd Embodiment shown in FIG. 2 mentioned above. That is, the source gas is supplied from the source gas supply pipe 1a, the inert gas is supplied from the inert gas supply pipe 2a, and the reaction gas is supplied from the reaction gas supply pipe 3a, respectively. Further, when the raw material gas supply, the N ₂ gas is used as a carrier gas. In addition, the reaction gas is activated by the activation mechanism 9 and supplied from the activation gas supply pipe 3c as the activation gas.

<Sequence Example 1>

In Sequence Example 1 shown in FIG. 5A, a process of supplying a source gas as a first process gas and an activation gas as a second process gas, and N ₂ as an inert gas are supplied to the process chamber 203 in the process chamber 203. The process of purging the inside is repeated.

Specifically, the steps of feeding a raw material gas as the first processing gas into the processing chamber 203, by feeding the N ₂ as an inert gas into the processing chamber 203 from the inert gas supply pipe (2a) for purging the treatment chamber 203 supplying an N ₂ as an inert gas into the processing chamber 203 from the process and the process chamber process and the inert gas supply pipe (2a) for supplying the active gas as the second processing gas in the 203 step of purging the treatment chamber 203 Is made into 1 cycle, and this cycle is repeated in multiple times.

In the process of supplying the source gas and the process of supplying the activating gas, by closing the valve 243e and opening the valve 243i, N ₂ supplied to the inert gas supply pipe 2a is not supplied into the process chamber 203. Instead, the exhaust gas is exhausted from the inert gas vent pipe 2b.

In the process of purging the inside of the processing chamber 203, the flow of N ₂ supplied to the inert gas supply pipe 2a is opened by opening the valve 243e and closing the valve 243i. The flow is directed from the flow toward the flow toward the flow in the process chamber 203. At this time, the total gas flow rate in the processing chamber 203 is made constant.

On the other hand, in Sequence Example 1, the supply flow rate of the source gas from the source gas supply pipe 1a is always constant as b1. Therefore, by opening the valve 243a and closing the valve 243g, the source gas supply flow rate into the process chamber 203 in the source gas supply process is b1. Further, by closing the valve 243a and opening the valve 243g, the source gas bypasses the process chamber 203 and is exhausted from the source gas vent pipe 1b, so that the process chamber is activated in the activation gas supply process and purge process. The supply flow rate of the source gas into the inside of 203 is b2 (= 0). In addition, the supply flow volume b1 of source gas is a total flow volume containing a carrier gas.

In addition, in Sequence Example 1, the supply flow rate of the activation gas from the activation gas supply pipe 3c is always constant at c1. Therefore, by opening the valve 243f and closing the valve 243h, the supply flow rate of the activation gas to the process chamber 203 in the activation gas supply process is c1. In addition, by closing the valve 243f and opening the valve 243h, the activating gas bypasses the process chamber 203 and is exhausted from the activating gas vent pipe 3b. Thus, in the source gas supply process and the purge process, The supply flow rate of the activating gas to the processing chamber 203 is c2 (= 0).

Further, in Sequence Example 1, the inert gas supply flow rate from the inert gas supply pipe 2a is also always constant at a1. In the purge step, the valve 243e is opened and the valve 243i is closed to allow the flow of the inert gas supplied to the inert gas supply pipe 2a from the flow directed toward the inert gas vent pipe 2b. 203) to switch to a flow inward. Therefore, the inert gas supply flow rate into the process chamber 203 in the purge process is a1. In addition, in the source gas supply process and the activation gas supply process, the valve 243e is closed and the valve 243i is opened, thereby not supplying the inert gas supplied to the inert gas supply pipe 2a into the processing chamber 203. The exhaust gas is exhausted from the inert gas vent pipe 2b. Therefore, the supply flow volume of the inert gas to the process chamber 203 in the source gas supply process and the activation gas supply process is a2 (= 0).

The supply flow rate b1 of the source gas in the source gas supply step, the supply flow rate c1 of the activation gas in the activation gas supply step, and the supply flow rate a1 of the inert gas in the purge step The mass flow controllers 241a to 241e are controlled so as to be equal to each other (b1 = c1 = a1), that is, the total gas flow rate in the process chamber 203 is constant.

By controlling the supply flow rate of the gas in this manner, it is possible to suppress the occurrence of pressure fluctuations in the processing chamber 203, thereby suppressing the agitation of foreign matters generated in the processing chamber 203, and thus to the substrate 200. Adsorption of foreign matter can be suppressed.

That is, according to the sequence example 1, in the source gas supply process and the activation gas supply process, while closing the valve 243e provided in the inert gas supply pipe 2a, the valve 243i provided in the inert gas vent pipe 2b is carried out. The inert gas always flows through the inert gas supply pipe 2a by opening the. According to the findings of the inventors, when the inert gas always flows in the inert gas supply pipe 2a, even if the valve 243e is closed, the pressure difference generated in the inert gas supply pipe 2a does not provide the inert gas vent pipe 2b. It is much smaller than (Comparative Example). Since the pressure difference transmitted to the processing chamber 203 is small even when the valve 243e is opened again, this pressure difference is absorbed in the processing chamber 203 and it is thought that the occurrence of pressure fluctuations in the processing chamber 203 can be suppressed. do.

In addition, the pressure in the inert gas supply pipe 2a downstream from the valve 243e when the valve 243e is closed and the valve 243i is opened is about the same as the pressure in the processing chamber 203 (10 ³ Pa or less). It is considered that the pressure in the inert gas supply pipe 2a on the upstream side of the valve 243e is also about the same as the pressure in the processing chamber 203 (10 ³ Pa or less). In this state, the portion downstream of the valve 243e in the inert gas supply pipe 2a and the portion upstream of the valve 243e are also evacuated together by the same exhaust pump 8. to be. However, since the exhaust paths from the valve 243e to the exhaust pump 8 are different (the flow resistance of each exhaust path is different), the upstream side and the downstream side of the valve 243e in the inert gas supply pipe 2a are different. In the meantime, it is thought that some pressure difference on the order of less than 10 Pa may occur.

As described above, in the case where the inert gas vent pipe 2b is not provided (comparative example), the valve 243e is closed, so as to be disposed between the upstream side and the downstream side than the valve 243e in the inert gas supply pipe 2a. It is thought that the pressure difference of 2 times or more of process pressure (for example, 100 Pa or more) has arisen. On the other hand, in the case of Sequence Example 1, by closing the valve 243e and opening the valve 243i, the pressure difference between the upstream side and the downstream side is lower than the valve 243e in the inert gas supply pipe 2a. It is thought that it can be suppressed to less than 1/5 (for example, less than 10 Pa). That is, according to Sequence Example 1, the pressure difference between the upstream side and the downstream side than the valve 243e in the inert gas supply pipe 2a is compared with the case where the inert gas vent pipe 2b is not provided (comparative example). It can be 1/10 or less, and the pressure fluctuations in the processing chamber 203 can be sufficiently suppressed. In the case of Sequence Example 1, the total flow rate of the gas supply flow rate can be controlled to suppress the occurrence of pressure fluctuations in response to the faster switching of the gas.

<Sequence Example 2>

Figure 5 (b) the processing chamber 203 to a sequence example 2, the processing chamber 203 in the supplying N ₂ as a step, the inert gas supplied to the active gas as the source gas, the second process gas serving as a first process gas shown in Fig. The process of purging the inside is repeated.

Specifically, the steps of feeding a raw material gas as the first processing gas into the processing chamber 203, by feeding the N ₂ as an inert gas into the processing chamber 203 from the inert gas supply pipe (2a) for purging the treatment chamber 203 supplying an N ₂ as an inert gas into the processing chamber 203 from the process and the process chamber process and the inert gas supply pipe (2a) for supplying the active gas as the second processing gas in the 203 step of purging the treatment chamber 203 Is made into 1 cycle, and this cycle is repeated in multiple times.

In the step of supplying the source gas and the step of supplying the activating gas, the valve 243e is closed and the valve 243i is opened, thereby not supplying N ₂ supplied to the inert gas supply pipe 2a into the processing chamber 203. The flow rate of N ₂ flowing from the inert gas supply pipe 2a into the processing chamber 203 is less than that of exhausting the inert gas vent pipe 2b or purging the inside of the processing chamber 203.

In the process of purging the process chamber 203, the flow of N ₂ supplied to the inert gas supply pipe 2a is directed to the inert gas vent pipe 2b by opening the valve 243e and closing the valve 243i. The flow rate of N ₂ flowing from the inert gas supply pipe 2a into the processing chamber 203 is higher than the process of switching from the flow to the flow toward the processing chamber 203 or supplying the source gas and supplying the activation gas. have.

More specifically, in the step of supplying the source gas as the first process gas, _the flow rate of N ₂ flowing from the inert gas supply pipe 2a into the process chamber 203 is made smaller than the process of purging the inside of the process chamber 203. In the step of supplying the activating gas as the second processing gas, the inert gas is not supplied to the processing chamber 203 by supplying the N ₂ supplied to the inert gas supply pipe 2a by closing the valve 243e and opening the valve 243i. It is made to exhaust from the vent pipe 2b.

In the step of purging the inside of the processing chamber 203 after the step of supplying the source gas, _the flow rate of N ₂ flowing from the inert gas supply pipe 2a into the process chamber 203 is increased more than the step of supplying the source gas, In the step of purging the process chamber 203 after the step of supplying the activating gas, _the flow of N ₂ supplied to the inert gas supply pipe 2a is controlled by opening the valve 243e and closing the valve 243i. The flow toward the vent pipe 2b is switched to the flow toward the inside of the processing chamber 203. At this time, the total gas flow rate in the processing chamber 203 is made constant.

In addition, in sequence example 2, the source gas supply flow volume from the source gas supply pipe 1a is always constant to b1. Therefore, by opening the valve 243a and closing the valve 243g, the supply flow rate of the source gas to the inside of the processing chamber 203 in the source gas supply process is b1. In addition, by closing the valve 243a and opening the valve 243g, the source gas bypasses the process chamber 203 and is exhausted from the source gas vent pipe 1b. Therefore, in the activation gas supply process and the purge process, The supply flow rate of the source gas into the process chamber 203 is b2 (= 0). In addition, the supply flow volume b1 of source gas is a total flow volume containing a carrier gas.

In addition, in Sequence Example 2, the supply flow rate of the activation gas from the activation gas supply pipe 3c is always constant at c1. Therefore, by opening the valve 243f and closing the valve 243h, the supply flow rate of the activation gas to the process chamber 203 in the activation gas supply process is c1. In addition, by closing the valve 243f and opening the valve 243h, the activating gas bypasses the process chamber 203 and is exhausted from the activating gas vent pipe 3b. Thus, in the source gas supply process and the purge process, The supply flow rate of the activating gas to the processing chamber 203 is c2 (= 0). In this way, the supply flow rate of the source gas and the supply flow rate of the activation gas to the process chamber 203 in each step of Sequence Example 2 are the same as those of Sequence Example 1. However, in the sequence example 2, the point which makes c1 more than b1 differs from the sequence example 1. That is, in sequence example 2, the mass flow controller so that the supply flow rate c1 of the activation gas from the activation gas supply pipe 3c may be larger than the source gas supply flow rate b1 from the supply pipe 1a of the source gas (c1> b1). 241a to 241c are controlled.

Moreover, the supply flow volume of the inert gas from the inert gas supply pipe 2a in sequence example 2 also differs from sequence example 1. FIG.

First, in the purge step after the source gas supply step, the supply flow rate of the inert gas flowing from the inert gas supply pipe 2a into the processing chamber 203 while the valve 243e is opened and the valve 243i is kept closed. The valve 241e is controlled so that the flow rate is larger than the supply flow rate of the inert gas in the source gas supply step. In the purge step after the activation gas supply step, the flow of the inert gas supplied to the inert gas supply pipe 2a is inactivated by opening the valve 243e and closing the valve 243i in the same manner as in Sequence Example 1. The flow toward the gas vent pipe 2b is switched from the flow toward the process chamber 203. In any purge step, the inert gas supply flow rate into the processing chamber 203 is a1.

In addition, the supply flow rate a2 (≠ 0) of the inert gas in the source gas supply process adjusts the mass flow controller 241e so as to be smaller than the supply flow rate a1 of the inert gas in the purge process (a2 <a1). .

In addition, in the activation gas supply process, the inert gas bypasses the process chamber 203 and exhausts from the inert gas vent pipe 2b by closing the valve 243e and opening the valve 243i in the same manner as in Sequence Example 1. In addition, the inert gas supply flow rate into the process chamber 203 is set to a3 (= 0).

The sum of the supply flow rate a2 of the inert gas and the supply flow rate b1 of the source gas in the source gas supply step, the supply flow rate c1 of the activation gas in the activation gas supply step, and the purge step The mass flow controllers 241a to 241e are arranged such that the inert gas supply flow rates a1 in the process chambers are the same (a2 + b1 = c1 = a1), that is, the total gas flow rates in the process chamber 203 are constant. I'm in control.

By controlling the supply flow rate of the gas in this manner, it is possible to suppress the occurrence of pressure fluctuations in the processing chamber 203, thereby suppressing the agitation of foreign matters generated in the processing chamber 203, and thus to the substrate 200. It is possible to suppress adsorption of foreign matter on the body.

That is, when shifting from a source gas supply process to a purge process, the method of 1st Embodiment mentioned above (FIG. 4 (b)) is applied, and when it transfers from an activation gas supply process to a purge process, 2nd implementation mentioned above is carried out. The method of the sequence example 1 (FIG. 5 (a)) of the Example in a form is applied. Even in this case, the occurrence of pressure fluctuations in the processing chamber 203 can be suppressed for the reasons described above. In addition, the same effect is obtained even when the method of FIG. 5 (a) is applied to the transition from the source gas supply process to the purge process and the method of FIG. 4 (b) is applied to the transition from the activation gas supply process to the purge process. .

3. Third embodiment of the present invention

Next, as a 3rd embodiment of this invention, the structure of the processing furnace 202 of a substrate processing apparatus, and the Example of the cycle process of the substrate processing process performed by the processing furnace 202 are demonstrated one by one.

(1) Configuration to processing

First, in the structure of the process furnace of a substrate processing apparatus as 3rd Embodiment of this invention, it demonstrates using FIG. 3 is a schematic view showing an example of a single wafer MOCVD apparatus processing which is a substrate processing apparatus according to a third embodiment of the present invention.

The third embodiment in process in the form 202 is to the process of the second embodiment 202 differs from the that, in the third embodiment, the inert gas supply line for supplying the N ₂ (the first inert gas supply In addition to the first inert gas supply pipe 2a as a line), a second inert gas supply pipe 4a as an inert gas supply line (second inert gas supply line) for supplying Ar is provided. On the other hand, the inert gas supplied from the second inert gas supply pipe 4a is not limited to Ar, and may be N ₂ or He.

In the second inert gas supply pipe 4a, a second inert gas supply unit 250d for supplying Ar, a mass flow controller 241d as a flow rate control means, and a valve 243j for controlling the supply of Ar are connected in series. Connected. In addition, the second inert gas supply pipe 4a is not directly connected to the shower head 236, but Japaneseized to join the activation gas supply pipe 3c (downstream of the valve 243f) on the downstream side of the valve 243j. It is connected by connection.

Further, a second inert gas vent pipe as a second inert gas vent line (upstream of the valve 243j of the second inert gas supply pipe 4a (that is, between the mass flow controller 241d and the valve 243j)). 4b) is installed. The second inert gas vent pipe 4b is connected between the pressure control means 7 of the exhaust pipe 231 and the exhaust pump 8 via the valve 243k.

In addition, another difference from the processing furnace 202 in the third embodiment is different from the processing furnace 202 in the second embodiment is that, in the third embodiment, a first inert gas supply pipe for supplying N ₂ ( It is pointed out that 2a is not directly connected to the shower head 236, but is connected to the source gas supply pipe 1a (downstream of the valve 243a) on the downstream side of the valve 243e.

In other structure, it is the same as that of 1st Embodiment.

(2) Example of Cycle Processing

The difference between the substrate processing step according to the third embodiment and the substrate processing step according to the first and second embodiments lies in the cycle processing performed in the substrate processing step. The rest is the same as the substrate processing process according to the first and second embodiments. Hereinafter, the sequence example in the Example which concerns on 3rd Embodiment is demonstrated sequentially using FIG. 6 is a sequence example in an example according to the third embodiment.

In addition, a present Example is implemented by the substrate processing apparatus of 3rd Embodiment shown in FIG. 3 mentioned above. That is, the source gas is from the source gas supply pipe 1a, the inert gas N ₂ is from the first inert gas supply pipe 2a, the reaction gas is from the reaction gas supply pipe 3a, and the inert gas Ar is second inert. It is supplied from the gas supply line 4a, respectively. Further, when supplying the raw material gas, the N ₂ gas is used as a carrier gas. In addition, the reaction gas is activated by the activation mechanism 9 and supplied from the activation gas supply pipe 3c as the activation gas.

Specifically, in the sequence example shown in FIG. 6, a process of supplying a source gas as a first process gas and an activation gas as a second process gas and N ₂ or Ar as an inert gas are supplied to the process chamber 203 in the process chamber 203. ) The process of purging the inside is repeated.

Specifically, the process of supplying the source gas as a 1st process gas to the process chamber 203, and N as an inert gas in the process chamber 203 from the 1st inert gas supply pipe 2a and the 2nd inert gas supply pipe 4a. Supplying ₂ and Ar to purge the inside of the processing chamber 203, supplying an activation gas as a second processing gas into the processing chamber 203, a first inert gas supply pipe 2a and a second inert gas supply pipe ( The process of purging the inside of the process chamber by supplying N ₂ and Ar as an inert gas from the process chamber from 4a) is made one cycle, and this cycle is repeated several times.

In the step of supplying a source gas, to close the valve (243e), the valve (243i) by yeoleum first without supplying N ₂ supplied to the inert gas supply pipe (2a) into the processing chamber 203, an inert gas vent pipe ( While exhausting from 2b), the valve 243k is closed and the valve 243j is opened to supply Ar supplied to the second inert gas supply pipe 4a into the processing chamber 203.

In the step of supplying the activating gas, by closing the valve 243j and opening the valve 243k, the second inert gas vent pipe does not supply Ar supplied to the second inert gas supply pipe 4a into the processing chamber 203. While exhausting from 4b, the valve 243i is closed and the valve 243e is opened to supply N ₂ supplied to the first inert gas supply pipe 2a into the processing chamber 203.

In the process of purging the process chamber 203 after the process of supplying the source gas, the valve 243k is closed, the valve 243j is opened, and the process chamber 203 is opened from the second inert gas supply pipe 4a. By keeping the flow of Ar directed, the valve 243i is closed, and the valve 243e is opened to allow the flow of N ₂ supplied to the first inert gas supply pipe 2a to be transferred to the inert gas vent pipe 2b. The flow is directed from the flow toward the flow toward the process chamber 203.

In the process of purging the inside of the processing chamber 203 after the step of supplying the activating gas, the valve 243i is closed, the valve 243e is opened, and the valve 243e is opened from the first inert gas supply pipe 2a into the processing chamber 203. By keeping the flow of N ₂ close the valve 243k and opening the valve 243j, the flow of Ar supplied to the second inert gas supply pipe 4a is transferred to the second inert gas vent pipe 4b. The flow is directed to the flow directed into the processing chamber 203. At this time, the total gas flow rate in the process chamber 203 is made constant.

In the present embodiment, the supply flow rate of the source gas from the source gas supply pipe 1a is always constant at b1. Therefore, by opening the valve 243a and closing the valve 243g, the supply flow rate of the source gas to the inside of the processing chamber 203 in the source gas supply process is b1. In addition, by closing the valve 243a and opening the valve 243g, the source gas bypasses the process chamber 203 and is exhausted from the source gas vent pipe 1b. Therefore, in the activation gas supply process and the purge process, The supply flow rate of the source gas into the process chamber 203 is b2 (= 0). In addition, the supply flow volume b1 of source gas is a total flow volume containing a carrier gas.

In the present embodiment, the supply flow rate of the activation gas from the activation gas supply pipe 3c is always constant at c1. Therefore, by opening the valve 243f and closing the valve 243h, the supply flow rate of the activation gas to the process chamber 203 in the activation gas supply process is c1. In addition, by closing the valve 243f and opening the valve 243h, the activating gas bypasses the processing chamber 203 and is exhausted from the activating gas vent pipe 3b. The supply flow rate of the activating gas to the processing chamber 203 is c2 (= 0).

In the present embodiment, the supply flow rate of the inert gas N ₂ from the first inert gas supply pipe 2a is also constant at d1 at all times. Therefore, in the purge process and the activation gas supply process, the supply flow rate of the inert gas N2 to the process chamber 203 via the source gas supply pipe 1a is opened by opening the valve 243e and closing the valve 243i. Becomes d1. In addition, in the source gas supply process, by closing the valve 243e and opening the valve 243i, the flow rate of the inert gas N ₂ supplied into the processing chamber 203 via the source gas supply pipe 1a is d2 ( = 0).

In addition, in the present embodiment, the supply flow rate of the inert gas Ar from the second inert gas supply pipe 4a is always constant at e1. Therefore, in the purge process and the source gas supply process, the supply flow rate of the inert gas Ar to the process chamber 203 via the activation gas supply pipe 3c by opening the valve 243j and closing the valve 243k. Becomes e1. In addition, in the activation gas supply process, by closing the valve 243j and opening the valve 243k, the supply flow rate of the inert gas Ar to the process chamber 203 via the activation gas supply pipe 3c is e2. (= 0).

Further, the inert gas in the supply flow (e1), and the sum of (e1 + b1) and the active gas supply step of the supply flow rate (b1) of the source gas of the inert gas (Ar) in the raw material gas supply step (N ₂ Sum (d1 + c1) of the supply flow rate d1 of the supply flow rate and the supply flow rate c1 of the activation gas, the supply flow rate d1 of the inert gas N ₂ in the purge process, and the supply of the inert gas Ar The mass flow controllers 241a to 241e are controlled so that the sum d1 + e1 of the flow rates e1 is the same (e1 + b1 = d1 + c1 = d1 + e1), respectively.

By controlling the supply flow rate of the gas in this manner, it is possible to suppress the occurrence of pressure fluctuations in the processing chamber 203, thereby suppressing the agitation of foreign matters generated in the processing chamber 203, and thus to the substrate 200. Adsorption of foreign matter can be suppressed.

That is, according to the present embodiment, the inert gas supply pipe (by closing the valve 243e provided in the first inert gas supply pipe 2a and opening the valve 243i provided in the first inert gas vent pipe 2b). Inert gas N2 in 2a) always flows. Similarly, the inert gas supply pipe 4a is inactivated by closing the valve 243j provided in the second inert gas supply pipe 4a and opening the valve 243k provided in the second inert gas vent pipe 4b. Gas Ar always flows. According to the findings of the inventors, the inert gases N ₂ and Ar always flow in the first inert gas supply pipe 2a and the second inert gas supply pipe 4a so that the valves 243e and 243j are closed. The pressure difference generated in the first inert gas supply pipe 2a and the second inert gas supply pipe 4a is much smaller than when the first inert gas vent pipe 2b and the second inert gas vent pipe 4b are not provided. Even if the valves 243e and 243j are opened, the pressure difference transmitted in the process chamber 203 is small, so that the pressure difference is absorbed in the process chamber 203 and the occurrence of pressure fluctuations in the process chamber 203 is suppressed. It is thought to be.

Also, closing the valve (243e), the pressure in the downstream side of the valve (243e) when open a valve (243i), the first inert gas supply pipe (2a), the chamber (203) pressure and the same level (10 ³ Pa in the The pressure in the first inert gas supply pipe 2a that is upstream from the valve 243e is also considered to be about the same as the pressure in the processing chamber 203 (10 ³ Pa or less). The reason why this can be said is that in this state, the portion downstream from the valve 243e in the first inert gas supply pipe 2a and the portion upstream from the valve 243e are the same with the same exhaust pump 8. This is because the vacuum exhaust. However, since the exhaust paths from the valve 243e to the exhaust pump 8 are different from each other, it is less than 10 Pa between the upstream side and the downstream side than the valve 243e in the first inert gas supply pipe 2a. It is thought that some pressure difference can occur. Similarly, the pressure in the second inert gas supply pipe 4a downstream from the valve 243j when the valve 243j is closed and the valve 243k is opened is about the same as the pressure in the processing chamber 203 (10). ³ Pa or less), and the pressure in the second inert gas supply pipe 4a that is upstream from the valve 243j is also considered to be about the same as the pressure in the process chamber 203 (10 ³ Pa or less). . The reason why this can be said is that in this state, the portion downstream from the valve 243j in the second inert gas supply pipe 4a and the portion upstream from the valve 243j are the same as the exhaust pump 8. This is because the vacuum is exhausted in the same manner. However, since the exhaust paths from the valve 243j to the exhaust pump 8 are different (the flow resistance of each exhaust path is different), the upstream side and the valve 243j in the second inert gas supply pipe 4a are different. It is thought that some pressure difference of about less than 10 Pa may arise between downstream. In the present embodiment, in response to the faster gas switching, the total flow rate of the gas supply flow rate can be controlled to suppress the occurrence of pressure fluctuations.

Further, according to the present embodiment, the source gas supply pipe 1a can be purged by N ₂ at all times except for the supply of the source gas, and the inside of the activation gas supply pipe 3c is always replaced by Ar except for the supply of the activation gas. In terms of purging the pipe by the inert gas, the third embodiment (the configuration in FIG. 6) is more preferable than the second embodiment (the configuration in FIG. 5).

In addition, in the Example (FIG. 4 (b)) of 1st Embodiment, supply of inert gas by the mass flow controller 241e in the state which is always open without closing the valve 243e provided in the inert gas supply pipe 2a. By increasing or decreasing the flow rate, the inert gas is supplied into the process chamber 203 in a pulse shape. In contrast, in Sequence Example 1 (FIG. 5 (a)) of the second embodiment, the mass flow controller 241e switches the opening and closing of the valves 243e and 243i without increasing or decreasing the supply flow rate of the inert gas. By switching the flow of the gas, the inert gas is supplied into the process chamber 203 in a pulse shape. Moreover, in 3rd Embodiment, the flow of inert gas is switched by switching the opening and closing of the valves 243e and 243i and the valves 243j and 243k without increasing or decreasing the supply flow volume of the inert gas by the mass flow controllers 241e and 241d. By switching over, inert gas is supplied into the process chamber 203 in a pulse shape. As a result, as shown in FIG.8 (b), the increase and decrease of the supply flow volume of an inert gas can be performed more quickly (response of gas flow control can be improved).

FIG. 8 (a) is a graph illustrating a change in supply flow rate of the inert gas when the supply flow rate is increased or decreased by the mass flow controller, and (b) is an inert gas when the flow is switched by switching the valve opening and closing. It is a graph illustrating a change in supply flow rate. In any graph, the vertical axis represents the inert gas supply flow rate supplied to the process chamber 203 in the form of a pulse, and the horizontal axis represents the elapsed time. According to FIG. 8, when the flow of inert gas is switched by switching the opening and closing of the valve (FIG. 8 (b)), the supply flow rate is increased or decreased by the mass flow controller (FIG. 8 (a)). The time from the start of the increase or decrease of the flow rate until the supply flow rate is stabilized (the response time of the supply flow rate control) is shortened, and the increase and decrease of the supply flow rate can be performed more quickly. In the case of increasing or decreasing the supply flow rate by the mass flow controller (Fig. 8 (a)), it takes time until the flow rate is stabilized after giving the flow rate change command, and the response of the flow rate change rise and fall is bad, but the valve opening and closing is In the case of switching the flow of inert gas by switching of [Fig. 8 (b)], the time from switching the opening and closing of the valve until the flow rate is stabilized is short, and the response of the rise and fall of the flow rate change is good.

4. Fourth embodiment of the present invention

Next, the structure of the substrate processing apparatus processing furnace 202 as the fourth embodiment of the present invention, and an example of the cycle processing of the substrate processing process performed by the processing furnace 202 will be described sequentially.

(1) Configuration to processing

First, as a 4th embodiment of this invention, the structure of the processing furnace 202 of a substrate processing apparatus is demonstrated using FIG. 9 is a schematic view showing an example of a processing furnace 202 of a sheet type MOCVD apparatus which is a substrate processing apparatus according to a fourth embodiment of the present invention.

The process furnace 202 in 4th Embodiment differs from the process furnace 202 of 3rd Embodiment by the source gas supply pipe 1a, the 1st inert gas supply pipe 2a, and the activation gas supply pipe 3c. The second inert gas supply pipe 4a is Japaneseized and connected to the shower head 236 so as to merge on the downstream side of the valves 243a, 243e, 243f, and 243j, respectively. On the other hand, the source gas vent pipe 1b, the first inert gas vent pipe 2b, the activating gas vent pipe 3b, and the second inert gas vent pipe 4b are the valves 243g, It is connected between the pressure control means 7 of the exhaust pipe 231, and the exhaust pump 8 via 243i, 243h, 243k.

In other structures, it is the same as that of 3rd embodiment.

(2) Example of Cycle Processing

The substrate processing process according to the fourth embodiment differs from the substrate processing process according to the third embodiment in that the gas flow rate exhausted by the exhaust pump 8 in the cycle step S9 (load of the exhaust pump 8). ] Is to control each flow controller or each valve so that] is always constant.

That is, the flow rate of the gas exhausted from the exhaust pipe 231 (exhaust port 230) when supplying the process gas into the process chamber 203 (the flow rate of the gas exhausted via the process chamber 203), and the source gas vent pipe ( 1b), the flow rate of the gas exhausted from the first inert gas vent pipe 2b, the activating gas vent pipe 3b, and the second inert gas vent pipe 4b (from each vent pipe without passing through the processing chamber 203). The total flow rate of the exhaust gas] and the flow rate of the gas exhausted from the exhaust pipe 231 (exhaust port 230) when the inert gas is supplied into the process chamber 203 (the gas exhausted via the process chamber 203). Flow rate] and the flow rate of the gas exhausted from the source gas vent pipe 1b, the first inert gas vent pipe 2b, the activating gas vent pipe 3b, and the second inert gas vent pipe 4b (process chamber 203). Flow rate of the gas exhausted from each vent pipe without passing through It is the point which controls operation | movement of each mass flow controller 241a-241e or each valve 243a-243k so that it may become possible.

An example of flow rates of various gases in the cycle step of the present embodiment will be described with reference to FIG. 10.

First, in source gas supply process S5, valves 243a, 243i, 243h, and 243j are opened while the flow rates are controlled by the mass flow controllers 241a to 241e, and the valves 243g, 243e, 243f, and 243k are opened. By closing, the flow rate of the source gas supplied from the source gas supply pipe 1a into the processing chamber 203 and exhausted from the exhaust port 230 is 0.5 slm, and is supplied from the second inert gas supply pipe 4a into the processing chamber 203. The flow rate of the inert gas Ar exhausted from the exhaust port 230 is 0.2 slm, and the flow rate of the inert gas N ₂ exhausted from the first inert gas vent pipe 2b without passing through the process chamber 203 is 0.5. It is set as slm, and the flow volume of the activating gas exhausted from the activating gas vent pipe 3b without passing through the process chamber 203 is set to 0.2 slm.

In the purge step S6 according to the present embodiment, the valves 243g, 243e, 243h, and 243j are opened while the flow rates are controlled by the mass flow controllers 241a to 241e, and the valves 243a, 243i, and 243f, By closing 243k, the flow rate of the inert gas N ₂ supplied from the first inert gas supply pipe 2a into the process chamber 203 and exhausted from the exhaust port 230 is 0.5 slm, and the second inert gas supply pipe 4a is closed. Flow rate of the inert gas Ar supplied into the processing chamber 203 and exhausted from the exhaust port 230 is 0.2 slm, and the raw material gas exhausted from the source gas vent pipe 1b without passing through the processing chamber 203. The flow rate is 0.5 slm, and the flow rate of the activating gas exhausted from the activating gas vent pipe 3b without passing through the processing chamber 203 is 0.2 slm.

In the activation gas supply process S7 according to the present embodiment, the valves 243g, 243e, 243f, and 243k are opened while the flow rates are controlled by the mass flow controllers 241a to 241e, and the valves 243a, 243i, By closing 243h and 243j, the flow rate of the inert gas N ₂ supplied from the first inert gas supply pipe 2a into the processing chamber 203 and exhausted from the exhaust port 230 is 0.5 slm, and the activation gas supply pipe 3a is closed. The flow rate of the activation gas supplied into the process chamber 203 and exhausted from the exhaust port 230 is 0.2 slm, and the flow rate of the source gas exhausted from the source gas vent pipe 1b without passing through the process chamber 203 is 0.5 slm. It is set as slm, and the flow volume of the inert gas Ar exhausted from the second inert gas vent pipe 4b without passing through the process chamber 203 is set to 0.2 slm.

In addition, in the purge supply process S8 which concerns on this embodiment, the valves 243g, 243e, 243h, and 243j are opened, and the valves 243a, 243i, and 243f are controlled by the mass flow controllers 241a to 241e. And 243k, the flow rate of the inert gas N ₂ supplied from the first inert gas supply pipe 2a into the process chamber 203 and exhausted from the exhaust port 230 is 0.5 slm, and the second inert gas supply pipe ( The source gas discharged from the source gas vent pipe 1b without passing through the process chamber 203 at a flow rate of 0.2 slm of the inert gas Ar supplied to the process chamber 203 from 4a and exhausted from the exhaust port 230. The flow rate of is 0.5 slm, and the flow rate of the activation gas exhausted from the activation gas vent pipe 3b without passing through the processing chamber 203 is 0.2 slm.

Thus, in this embodiment, in each process of source gas supply process S5-purge supply process S8, the subtotal flow volume of the gas supplied into the process chamber 203 and exhausted from the exhaust port 230 is measured. It is always 0.7 slm (= 0.5 slm + 0.2 slm), and the subtotal flow rate of the gas exhausted from each vent pipe without passing through the process chamber 203 is always 0.7 slm (= 0.5 slm + 0.2 slm), and the exhaust pump ( The total flow rate of the gas exhausted by 8) is always 1.4 slm (= 0.7 slm + 0.7 slm). That is, the gas flow rate (load of the exhaust pump 8) exhausted by the exhaust pump 8 is always made constant. Moreover, in each process of source gas supply process S5-purge supply process S8, the subtotal flow volume (0.7 slm) of the gas supplied into the process chamber 203 and exhausted from the exhaust port 230, and the process chamber 203 The ratio with the subtotal flow rate (0.7 slm) of the gas exhausted from each vent pipe without passing through is always constant (1: 1). Thereby, generation | occurrence | production of the pressure fluctuation in the process chamber 203 can be suppressed, stirring of the foreign material which generate | occur | produced in the process chamber 203 can be suppressed, and foreign material adsorption to the board | substrate 200 can be suppressed.

5. Fifth Embodiment of the Invention

In this embodiment, a set of a process gas supply line, a process gas vent line, an inert gas supply line, and an inert gas vent line is provided for each gas seed of the process gas supplied into the process chamber 203. Each of these lines is configured to operate in conjunction with each other in the process of supplying the processing gas into the process chamber 203 and the process of purging the inside of the process chamber 203.

As a fifth embodiment of the present invention, the configuration of the processing furnace 202 of the substrate processing apparatus will be described with reference to FIG. 11. 11 is a schematic view showing an example of a single wafer type MOCVD apparatus processing furnace 202 which is a substrate processing apparatus according to a fifth embodiment of the present invention.

According to FIG. 11, the source gas supply pipe 1a, the 1st inert gas supply pipe 2a, the source gas vent pipe 1b, and the 1st inert gas vent pipe are comprised by the set 250. As shown in FIG. On the other hand, such a set 250 is provided for each type of gas of the processing gas supplied into the processing chamber 203. For example, when activating gas is supplied as a processing gas into the processing chamber 203, although not shown, a set of an activating gas supply pipe, a second inert gas supply pipe, an activating gas vent pipe, and a second inert gas vent pipe is provided. Is installed. About other structure, it is the same as that of 3rd embodiment.

An example of flow rates of various gases in the cycle step of the present embodiment will be described with reference to FIG. 12.

According to FIG. 12, in the source gas supply process S5 according to the present embodiment, the valves 243a and 243i are opened while the valves 243g and 243e are opened while the flow rates are controlled by the mass flow controllers 241a and 241e. By closing, the flow rate of the source gas supplied from the source gas supply pipe 1a into the process chamber 203 and exhausted from the exhaust port 230 is 0.5 slm, and the first inert gas vent pipe 2b is not passed through the process chamber 203. The flow rate of the inert gas N2 exhausted from) is 0.5 slm.

12, in the purge step S6 according to the present embodiment, the valves 243g and 243e are opened while the valves 243a and 243i are opened while the flow rates are controlled by the mass flow controllers 241a and 241e. By closing, the flow rate of the inert gas N ₂ supplied from the first inert gas supply pipe 2a into the processing chamber 203 and exhausted from the exhaust port 230 is 0.5 slm, and the source gas is not passed through the processing chamber 203. The flow rate of the source gas exhausted from the vent pipe 1b is 0.5 slm.

As described above, in the present embodiment, in the source gas supply step S5 and the purge step S6, the subtotal flow rate of the gas supplied into the processing chamber 203 and exhausted from the exhaust port 230 is always 0.5 slm, The subtotal flow rate of the gas exhausted from each vent pipe without passing through 203 is always 0.5 slm, and the total flow rate of the gas exhausted by the exhaust pump 8 is always 1.0 slm. That is, the flow rate (load of the exhaust pump 8) of the gas exhausted by the exhaust pump 8 is always made constant. In addition, in the source gas supply process S5 and the purge supply process S6, the subtotal flow rate (0.5 slm) of the gas supplied into the process chamber 203 and exhausted from the exhaust port 230 is not passed through the process chamber 203. Instead, the ratio with the subtotal flow rate (0.5 slm) of the gas exhausted from each vent pipe is always constant (1: 1). Thereby, generation | occurrence | production of the pressure fluctuation in the process chamber 203 can be suppressed, stirring of the foreign material which generate | occur | produced in the process chamber 203 can be suppressed, and foreign material adsorption to the board | substrate 200 can be suppressed.

6. Sixth embodiment of the present invention

In this embodiment, the ratio of the subtotal flow rate of the gas supplied into the process chamber 203 and exhausted from the exhaust port 230 and the subtotal flow rate of the gas exhausted from each vent pipe without passing through the process chamber 203 is the source gas. In each process of supply process S5 and purge process S6, although it is not 1: 1, it is comprised so that it may be constant.

As a sixth embodiment of the present invention, the configuration of the processing furnace of the substrate processing apparatus will be described with reference to FIG. 13. It is a schematic diagram which shows an example of the sheet | leaf type MOCVD apparatus process which is a substrate processing apparatus which concerns on 6th Embodiment of this invention.

According to FIG. 13, in addition to the source gas supply pipe 1a, the 1st inert gas supply pipe 2a, the source gas vent pipe 1b, and the 1st inert gas vent pipe, it serves as a dilution inert gas supply line which dilutes source gas. The dilution inert gas supply pipe 2a 'and the dilution inert gas vent pipe 2b' as the dilution inert gas vent line are provided.

The inert gas supply pipe 2a 'for dilution has an inert gas supply unit 250e' that supplies an inert gas for dilution as a non-reactive gas, and a mass flow controller as a flow control means (flow controller) for controlling an inert gas supply flow rate. 241e 'is provided in order from an upstream side. N ₂ is used as the inert gas, for example. The dilution inert gas supply pipe 2a 'is provided with a source gas supply pipe 1a (downstream of the valve 243a) and a first inert gas supply pipe 2a (downstream of the valve 243e) via the valve 243e'. It is connected in Japanese to join the side.

The dilution inert gas vent pipe 2b 'is located upstream of the valve 243e' of the dilution inert gas supply pipe 2a '(that is, between the mass flow controller 241e' and the valve 243e '). It is installed. The dilution inert gas vent pipe 2b 'is connected between the pressure control means 7 of the exhaust pipe 231 and the exhaust pump 8 via the valve 243i'.

In other structure, it is the same as that of 5th Embodiment.

The flow rate example of various gases in the cycle process of this embodiment is demonstrated using FIG.

In source gas supply process S5 which concerns on this embodiment, valve 243a, 243e ', 243i is opened, and valves 243g, 243i' are opened, controlling flow volume by mass flow controller 241a, 241e, 241e '. And 243e, the flow rate of the source gas supplied from the source gas supply pipe 1a into the processing chamber 203 and exhausted from the exhaust port 230 is 0.5 slm, and the process chamber (from the dilution inert gas supply pipe 2a ') is closed. The flow rate of the inert gas N ₂ supplied into the 203 and exhausted from the exhaust port 230 is 0.2 slm, and the inert gas N exhausted from the first inert gas vent pipe 2b without passing through the process chamber 203. ₂ ) the flow rate is 0.5 slm.

In the purge step S6 according to the present embodiment, the valves 243g, 243e ', and 243e are opened while the flow rate is controlled by the mass flow controllers 241a, 241e, and 241e', and the valves 243a, 243i ', By closing 243i, the flow rate of the inert gas N ₂ supplied from the first inert gas supply pipe 2a into the processing chamber 203 and exhausted from the exhaust port 230 is 0.5 slm, and the dilution inert gas supply pipe 2a is used. material that is discharged from a ') from being supplied into the processing chamber 203, an exhaust port 230, an inert gas (N ₂₎ without a flow rate and a 0.2 slm, not via the processing chamber 203, the raw material gas vent pipe (1b) of which is discharged from the The flow rate of gas is 0.5 slm.

Thus, in this embodiment, in source gas supply process S5 and purge process S6, the subtotal flow volume of the gas supplied into the process chamber 203 and exhausted from the exhaust port 230 is always 0.7 slm, and the process chamber The subtotal flow rate of the gas exhausted from each vent pipe without passing through 203 is always 0.5 slm, and the total flow rate of the gas exhausted by the exhaust pump 8 is always 1.2 slm. That is, the flow rate (load of the exhaust pump 8) of the gas exhausted by the exhaust pump 8 is always made constant. In addition, in source gas supply process S5 and purge supply process S6, the subtotal flow volume (0.7 slm) of the gas supplied into the process chamber 203 and exhausted from the exhaust port 230 and the process chamber 203 are not passed through. Instead, the ratio with the subtotal flow rate (0.5 slm) of the gas exhausted from each vent pipe is always constant (7: 5). Thereby, generation | occurrence | production of the pressure fluctuation in the process chamber 203 can be suppressed, the agitation of the foreign substance which generate | occur | produced in the process chamber 203 can be suppressed, and a foreign material adsorption to the board | substrate 200 can be suppressed.

On the other hand, using the sequences shown in the examples of the first to sixth embodiments described above, for example, the processing conditions in the case of forming an HfO ₂ film on the substrate 200 include processing temperatures: 350 ° C to 450 ° C, Processing pressure: 50-200 Pa, organic liquid raw material (MO raw material) which becomes a raw material gas as a 1st process gas: Hf (MMP) ₄ (Hf [OC (CH ₃ ) ₂ CH ₂ OCH ₃ ] ₄ [Tetrakis (1-) methoxy-2-methyl-2-propoxy) hafnium], supply flow rate of organic liquid raw material (MO raw material): 0.01-0.2 g / min, reaction gas (oxidant) which is an activating gas as a second processing gas: O ₂ / Ar mixture Gas, O ₂ Supply flow rate: 200-2000 sccm, Ar supply flow rate: 0-1800 sccm are illustrated.

<Other embodiments of the present invention>

The present invention can be widely applied to the case where film formation proceeds by conversion supply of two or more kinds of raw materials in addition to the film formation described in the above embodiments. For example, O ₂ activated with Ru raw material such as Ru (EtCp) ₂ and a remote plasma unit. Ru, RuO ₂ film formation by alternating supply of an oxidizing agent, Hf raw materials such as Hf- (MMP) ₄ and Si raw materials such as Si- (MMP) ₄ and H ₂ O or O ₃ HfSiO film-forming by alternating supply of oxidizing agents, such as these.

In addition, although the repetitive example of the film-forming process by raw material supply and the reforming (impurity removal) process by supply of active oxidized species was shown here, this invention is not limited to this, For example, raw material supply and The present invention can also be applied to a case in which a more periodic process is required, such as ALD (atomic layer deposition) which repeats supply of a reactive gas such as an oxidant. As the oxidizing agent, an oxidizing species which does not use a remote plasma unit such as ozone may be used. In that case, it is preferable to use an ozonizer as the activation mechanism 9 as mentioned above. Moreover, not only the combination of a raw material and an oxidizing agent but also the combination of 2 or more types of raw materials required for film-forming can be used as a means of suppressing pressure fluctuations similarly.

Moreover, although the CVD process was shown as the example in the said embodiment, since a pressure fluctuation arises also when switching gas also in an ALD process, the effect which suppresses generation | occurrence | production of a pressure fluctuation can be anticipated by using this method. In this case, the shower head which is a gas mixing part can also be replaced by a simple structure, and the case where a shower head is not used is also considered.

In addition, the gas used by this invention is not limited to the gas mentioned above, According to a use, it can select suitably from various types. For example, the source gas is not limited to a gas containing Ru, Hf, Si, Al, Ti, Sr, Y, Zr, Nb, Sn, Ba, La, Ta, Ir, Pt, W, Pb, Gas containing Bi etc. can be used. As the reaction gas, in addition to O radicals, H ₂ O gases, and O ₃ gases, NO, N ₂ O, H ₂ O ₂ , N ₂ , NH ₃ , N ₂ H ₆ , or these are produced by activating by an activating means. Gases containing these radical species and ionic species can be used.

In addition, in the foregoing description, the present invention has been described in the case where the present invention is applied to the MOCVD method in which the supply of the source gas and the supply of the reactive gas are alternately repeated. However, the present invention further provides a MOCVD which simultaneously supplies the source gas and the reactant gas. The same applies to the law.

Preferred Embodiments of the Invention

According to one aspect of the present invention, a processing chamber for processing a substrate, a processing gas supply line for supplying a processing gas into the processing chamber, an inert gas supply line for supplying an inert gas into the processing chamber, and an inert gas supply line are provided. And an inert gas vent line for exhausting the inert gas supplied to the inert gas supply line without supplying it into the processing chamber, and a first valve provided downstream from a portion where the inert gas vent line of the inert gas supply line is provided. And a second valve provided in the inert gas vent line, and an exhaust line for exhausting the inside of the processing chamber.

Preferably,

When the inert gas is not supplied from the inert gas supply line into the processing chamber, the inert gas supplied to the inert gas supply line is exhausted from the inert gas vent line, and the inert gas is supplied from the inert gas supply line into the processing chamber. And a controller for controlling the respective valves so as to switch the flow of the inert gas supplied to the inert gas supply line from the flow toward the inert gas vent line to the flow toward the process chamber when the inert gas is supplied.

Preferably,

A process gas vent line provided in the process gas supply line and exhausting the process gas supplied to the process gas supply line without being supplied into the process chamber, and a portion where the process gas vent line of the process gas supply line is provided. A third valve provided on the downstream side, a fourth valve provided on the processing gas vent line, and the processing gas and the inert gas are alternately supplied into the processing chamber, and the processing gas is supplied from the processing gas supply line into the processing chamber. When exhausting from the exhaust line while supplying the gas, the inert gas supplied to the inert gas supply line is exhausted from the inert gas vent line without being supplied into the process chamber, and the inert gas is supplied from the inert gas supply line into the process chamber. While supplying awards When exhausting from the air exhaust line, it has a controller which controls each said valve so that it may exhaust from the process gas vent line, without supplying the process gas supplied to the process gas supply line into the process chamber.

Preferably,

A flow rate controller is provided in each of the processing gas supply line and the inert gas supply line, and the controller exhausts the flow rate of the gas exhausted from the exhaust line when supplying the processing gas into the processing chamber and the inert gas vent line. The total flow rate between the flow rate of the gas and the flow rate of the gas exhausted from the exhaust line when the inert gas is supplied into the process chamber and the flow rate of the gas exhausted from the process gas vent line are constant. A ratio between the flow rate of the gas exhausted from the exhaust line and the gas flow rate exhausted from the inert gas vent line when the process gas is supplied into the process chamber;

 The respective flow controllers are further controlled such that a ratio between the flow rate of the gas exhausted from the exhaust line and the flow rate of the gas exhausted from the process gas vent line when the inert gas is supplied into the process chamber is constant.

Preferably,

The controller further controls the flow rate controller so that the flow rate of the total gas in the process chamber is constant when the process gas and the inert gas are alternately supplied into the process chamber.

According to another form of the invention,

A processing chamber for processing a substrate, a first processing gas supply line for supplying a first processing gas into the processing chamber, a second processing gas supply line for supplying a second processing gas into the processing chamber, and an inert gas into the processing chamber An inert gas supply line, an inert gas vent line installed in the inert gas supply line and exhausting the inert gas supplied to the inert gas supply line without supplying it into the processing chamber, and the inert gas of the inert gas supply line. A substrate processing apparatus having a first valve provided downstream from a portion where a vent line is provided, a second valve provided in the inert gas vent line, and an exhaust line for exhausting the inside of the processing chamber.

Preferably,

A first process gas vent line installed in the first process gas supply line and exhausting the first process gas supplied to the first process gas supply line without being supplied into the process chamber, and the second process gas supply line. A second process gas vent line provided and exhausted without supplying the second process gas supplied to the second process gas supply line into the process chamber, and the first process gas vent line of the first process gas supply line On the downstream side than the part provided with the 3rd valve provided downstream from the part provided, the 4th valve provided in the said 1st process gas vent line, and the said 2nd process gas vent line of the said 2nd process gas supply line. A fifth valve provided, a sixth valve provided in the second processing gas vent line, the first processing gas, the inert gas, and the second in the processing chamber; The process gas and the inert gas are repeatedly supplied in this order, and the second process is supplied from the first process gas supply line into the process chamber and from the second process gas supply line. When the gas is supplied, the inert gas supplied to the inert gas supply line is exhausted from the inert gas vent line without being supplied into the process chamber, and the inert gas is supplied from the inert gas supply line into the process chamber. The first processing gas supplied to the first processing gas supply line is exhausted from the first processing gas vent line without being supplied into the processing chamber, and the second processing gas supplied to the second processing gas supply line is exhausted. The second process gas vent without supplying it into the process chamber. To exhaust from and has a controller which controls the respective valve.

Preferably,

When the controller repeatedly supplies the first processing gas, the inert gas, the second processing gas, and the inert gas in this order in the processing chamber, the total gas flow rate in the processing chamber is constant. Further control the flow rate controller.

According to another form of the invention,

The process of carrying in a board | substrate into a process chamber, the process of processing a board | substrate in the said process chamber, and the process of carrying out the board | substrate after a process from the said process chamber, The process of processing the said board | substrate process in the said process chamber from a process gas supply line. And a step of supplying an inert gas from the inert gas supply line into the processing chamber, and the step of supplying the processing gas without supplying the inert gas supplied to the inert gas supply line into the processing chamber. In the process of exhausting from the inert gas vent line provided in the inert gas supply line, and supplying the inert gas, the flow of the inert gas supplied to the inert gas supply line is flowed from the flow toward the inert gas vent line. My head towards me The manufacturing method of a semiconductor device which switches to a real name.

Preferably, in the process of supplying the process gas and the process of supplying the inert gas, the total gas flow rate in the process chamber is made constant.

According to another form of the invention,

The process of carrying in a board | substrate into a process chamber, the process of processing a board | substrate in the said process chamber, and the process of carrying out the board | substrate after a process from the said process chamber, The process of processing the said board | substrate, The said process from a 1st process gas supply line Supplying a first processing gas into the processing chamber, supplying an inert gas from the inert gas supply line into the processing chamber, supplying a second processing gas from the second processing gas supply line into the processing chamber, and inactivating the inert gas. In the step of supplying the inert gas from the gas supply line into the processing chamber as one cycle, the cycle is repeated a plurality of times, and the step of supplying the first processing gas and the step of supplying the second processing gas, The inert gas supplied to the inert gas supply line into the processing chamber; In the step of exhausting from the inert gas vent line provided in the inert gas supply line without supplying the gas, and supplying the inert gas, the flow of the inert gas supplied to the inert gas supply line is directed toward the inert gas vent line. There is provided a method of manufacturing a semiconductor device for converting the flow from the flow into the processing chamber.

Preferably, when the cycle is repeated a plurality of times, the total gas flow rate in the processing chamber is made constant.

According to another form of the invention,

The process of carrying in a board | substrate into a process chamber, the process of processing a board | substrate in the said process chamber, and the process of carrying out the board | substrate after a process from the said process chamber, The process of processing the said board | substrate from a process gas supply line into the said process chamber. And a step of supplying a processing gas, and a step of supplying an inert gas from the inert gas supply line into the processing chamber. The step of supplying the processing gas includes supplying the inert gas supplied to the inert gas supply line into the processing chamber. The flow rate of the inert gas flowing from the inert gas supply line into the processing chamber is lower than the step of exhausting from the inert gas vent line provided in the inert gas supply line or supplying the inert gas, and supplying the inert gas. Process For example, the inert gas supply line is switched from the flow of the inert gas supplied to the inert gas supply line from the flow toward the inert gas vent line to the flow toward the processing chamber, or the process gas is supplied. The manufacturing method of the semiconductor device which increases the flow volume of the inert gas which flows from the said process chamber into the said process chamber is provided.

Preferably,

In the process of supplying the processing gas and the process of supplying the inert gas, the total gas flow rate in the processing chamber is made constant.

According to the form of this invention,

The process of carrying in a board | substrate into a process chamber, the process of processing a board | substrate in the said process chamber, and the process of carrying out the board | substrate after a process from the said process chamber, The process of processing the said board | substrate, The said process from a 1st process gas supply line Supplying a first processing gas into the processing chamber, supplying an inert gas from the inert gas supply line into the processing chamber, supplying a second processing gas from the second processing gas supply line into the processing chamber, and inactivating the inert gas. In the step of supplying the inert gas from the gas supply line into the processing chamber as one cycle, the cycle is repeated a plurality of times, the step of supplying the first processing gas and the step of supplying the second processing gas. The inert gas supplied to the inert gas supply line into the processing chamber. The flow rate of the inert gas flowing from the inert gas supply line to the processing chamber is lower than that of the step of exhausting the inert gas vent line provided in the inert gas supply line or supplying the inert gas without supplying the inert gas. In the process, the flow of the inert gas supplied to the inert gas supply line from the flow toward the inert gas vent line to the flow toward the processing chamber, or supplying the first processing gas or the first The manufacturing method of the semiconductor device which makes the flow volume of the inert gas which flows into the said process chamber from the said inert gas supply line rather than the process of supplying 2 process gas is provided.

Preferably,

When the cycle is repeated a plurality of times, the total gas flow rate in the processing chamber is made constant.

BRIEF DESCRIPTION OF THE DRAWINGS The schematic diagram of the system structure in the process of the substrate processing apparatus in 1st Embodiment of this invention.

2 is a schematic diagram of a system configuration of a substrate processing apparatus according to a second embodiment of the present invention.

3 is a schematic diagram of a system configuration of a substrate processing apparatus according to a third embodiment of the present invention.

4 is a graph showing an example of a sequence of supply of process gas to a process chamber, (a) is a conventional sequence example, and (b) is a sequence example in the first embodiment of the present invention.

Fig. 5 is a graph showing a supply sequence example of a processing gas to a processing chamber, (a) is sequence example 1 of the example in the second embodiment of the present invention, and (b) is example 2 in the second embodiment of the present invention. Sequence Example 2 of the embodiment of the

6 is a sequence example of an example in a third embodiment of the present invention.

7 is a flowchart of a substrate processing process according to the first embodiment of the present invention, which is performed as one step of the process of manufacturing a semiconductor device.

8A is a graph illustrating a change in supply flow rate of the inert gas when the supply flow rate is increased or decreased by the mass flow controller, and (b) is a supply of the inert gas when the flow is switched by opening and closing the valve. Graph illustrating flow rate changes.

9 is a schematic diagram of a system configuration in a process of a substrate processing apparatus according to a fourth embodiment of the present invention.

10 is a table exemplifying flow rates of various gases in the cycle step of the fourth embodiment of the present invention, respectively.

11 is a schematic diagram of a system configuration of a process of a substrate processing apparatus according to a fifth embodiment of the present invention.

12 is a table exemplifying flow rates of various gases in the cycle step of the fifth embodiment of the present invention.

13 is a schematic diagram of a system configuration of a processing furnace of a substrate processing apparatus according to a sixth embodiment of the present invention.

FIG. 14 is a table exemplifying flow rates of various gases in the cycle step of the sixth embodiment of the present invention. FIG.

<Description of Drawing Major Symbols>

 1a: raw material gas supply pipe 1b: raw material gas vent pipe

 2a: inert gas supply pipe 2b: inert gas vent pipe

 3a: reactive gas supply pipe 3b: activated gas vent pipe

 3c: activation gas supply pipe 4a: second inert gas supply pipe

 4b: second inert gas vent pipe 200: substrate

 203: treatment chamber 231: exhaust pipe

 256: main controller

Claims (12)

A processing chamber for processing a substrate, A processing gas supply line for supplying a processing gas into the processing chamber; An inert gas supply line for supplying an inert gas into the processing chamber; An inert gas vent line installed in the inert gas supply line and exhausting the inert gas supplied to the inert gas supply line without being supplied into the processing chamber; A first valve provided on a downstream side than a portion where the inert gas vent line of the inert gas supply line is installed; A second valve installed at the inert gas vent line; An exhaust line for exhausting the inside of the process chamber It has a substrate processing apparatus characterized by the above-mentioned. The inert gas supplied to the inert gas supply line is exhausted by the inert gas vent line when the inert gas is not supplied from the inert gas supply line to the processing chamber. When the inert gas is supplied from the inert gas supply line into the processing chamber, the flow of the inert gas supplied to the inert gas supply line can be converted from the flow toward the inert gas vent line into the flow toward the processing chamber. So that And a controller for controlling the respective valves. The process gas vent line of claim 1, further comprising: a process gas vent line installed in the process gas supply line and configured to exhaust the process gas supplied to the process gas supply line without being supplied into the process chamber; A third valve provided on a downstream side from a portion where the processing gas vent line of the processing gas supply line is provided; A fourth valve installed at the processing gas vent line; While alternately supplying the processing gas and the inert gas into the processing chamber, When exhausting from the exhaust line while supplying the process gas from the process gas supply line into the process chamber, the inert gas supplied to the inert gas supply line is exhausted from the inert gas vent line without being supplied into the process chamber, When exhausting from the exhaust line while supplying the inert gas from the inert gas supply line into the process chamber, the process gas supplied to the process gas supply line is exhausted from the process gas vent line without supplying the process gas into the process chamber. And a controller for controlling the respective valves. The flow rate controller according to claim 3, wherein the processing gas supply line and the inert gas supply line are each provided with a flow rate controller. The controller, A total flow rate of a flow rate of the gas exhausted from the exhaust line when the process gas is supplied into the process chamber and a flow rate of the gas exhausted from the inert gas vent line; When the flow rate of the gas exhausted from the exhaust line and the flow rate of the gas exhausted from the process gas vent line when the inert gas is supplied into the process chamber is made constant, A ratio between the flow rate of the gas exhausted from the exhaust line and the flow rate of the gas exhausted from the inert gas vent line when the process gas is supplied into the process chamber; The ratio between the flow rate of the gas exhausted from the exhaust line and the flow rate of the gas exhausted from the process gas vent line when the inert gas is supplied into the process chamber is constant. And controlling each of the flow rate controllers. The method of claim 3, wherein the controller, And controlling the flow rate controller so that the total gas flow rate is constant in the process chamber when the process gas and the inert gas are alternately supplied into the process chamber. A processing chamber for processing a substrate, A first process gas supply line for supplying a first process gas into the process chamber; A second process gas supply line for supplying a second process gas into the process chamber; An inert gas supply line for supplying an inert gas into the processing chamber; An inert gas vent line installed in the inert gas supply line and exhausting the inert gas supplied to the inert gas supply line without being supplied into the processing chamber; A first valve provided on a downstream side from a portion where the inert gas vent line of the inert gas supply line is provided; A second valve installed at the inert gas vent line; An exhaust line for exhausting the inside of the process chamber It has a substrate processing apparatus characterized by the above-mentioned. The first process gas vent line of claim 6, further comprising: a first process gas vent line installed in the first process gas supply line and configured to exhaust the first process gas supplied to the first process gas supply line without being supplied into the process chamber; A second process gas vent line installed in the second process gas supply line and exhausting the second process gas supplied to the second process gas supply line without being supplied into the process chamber; A third valve provided on a downstream side than a portion where the first process gas vent line of the first process gas supply line is provided; A fourth valve installed in the first process gas vent line; A fifth valve provided downstream from a portion where the second processing gas vent line of the second processing gas supply line is provided; A sixth valve installed in the second process gas vent line; The first processing gas, the inert gas, the second processing gas, and the inert gas are repeatedly supplied in this order in the processing chamber, When the first processing gas is supplied from the first processing gas supply line into the processing chamber and when the second processing gas is supplied from the second processing gas supply line, the inert gas supplied to the inert gas supply line is used. Exhausting from the inert gas vent line without supplying it into the process chamber, When the inert gas is supplied from the inert gas supply line into the process chamber, the first process gas supplied to the first process gas supply line is exhausted from the first process gas vent line without being supplied into the process chamber. And a controller configured to control the respective valves to exhaust the second processing gas supplied to the second processing gas supply line from the second processing gas vent line without supplying the processing gas into the processing chamber. Substrate processing apparatus having a. The method of claim 7, wherein the controller, The flow rate such that the total gas flow rate in the processing chamber is constant when the first processing gas, the inert gas, the second processing gas, and the inert gas are repeatedly supplied in this order in the processing chamber. And a controller for controlling the controller. Bringing the substrate into the processing chamber; Processing a substrate in the processing chamber; And carrying out the process of carrying out the board | substrate after a process from the said process chamber, The process of processing the substrate, Supplying a processing gas from the processing gas supply line into the processing chamber; It has a process of supplying inert gas into the said process chamber from an inert gas supply line, In the process of supplying the processing gas, Exhaust the inert gas supplied to the inert gas supply line from the inert gas vent line provided in the inert gas supply line without supplying it into the processing chamber, In the step of supplying the inert gas, the flow of the inert gas supplied to the inert gas supply line is switched from the flow toward the inert gas vent line to the flow toward the process chamber. . 10. The method of manufacturing a semiconductor device according to claim 9, wherein in the process of supplying the processing gas and the process of supplying the inert gas, the total gas flow rate is made constant in the processing chamber. Bringing the substrate into the processing chamber; Processing a substrate in the processing chamber; It has a process of carrying out the board | substrate after a process from the said process chamber, In the process of processing the substrate, Supplying a first processing gas from the first processing gas supply line to the processing chamber; Supplying an inert gas into the processing chamber from an inert gas supply line; Supplying a second processing gas into the processing chamber from a second processing gas supply line; Supplying the inert gas into the process chamber from the inert gas supply line Is 1 cycle, and this cycle is repeated a plurality of times, In the step of supplying the first processing gas and the step of supplying the second processing gas, an inert gas vent line provided in the inert gas supply line without supplying the inert gas supplied to the inert gas supply line into the processing chamber. Exhaust from In the step of supplying the inert gas, the flow of the inert gas supplied to the inert gas supply line is switched from the flow toward the inert gas vent line to the flow toward the process chamber. Way. The method of manufacturing a semiconductor device according to claim 11, wherein the total gas flow rate in the processing chamber is constant when the cycle is repeated a plurality of times.

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