JP2008258470A - Metallized film capacitor and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve vibration resistance in a metallized film capacitor used for automobiles, or the like. <P>SOLUTION: The metallized film capacitor comprises an element around which a pair of metallized films is wound, and a metallicon electrode 6 formed on both end faces of the element. The metallized film forms a metal vapor deposition electrode 2 while an insulation margin section 4 remains at one end in the width direction of a dielectric film 1. A dam margin section 5 is formed at one portion of the insulation margin section 4 by metal vapor deposition. The metallized film is overlapped for winding so that the dam margin sections 5 are mutually in reverse directions. Therefore, a portion coupled to the metallicon electrode 6 is doubled, thus sufficiently ensuring the mechanical and electrical coupling strength between the metallicon electrode 6 and the metallized film even if a heat-treatment process is performed before the metallicon electrode 6 is formed, and reducing the interlayer gap between the metallized films for improved vibration resistance. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention is used in various electronic devices, electrical devices, industrial devices, automobiles, and the like, and particularly relates to a metallized film capacitor that is optimal for smoothing, filtering, and snubber motor drive inverter circuits of hybrid vehicles, and a method for manufacturing the same. Is.

  In recent years, from the viewpoint of environmental protection, all electric devices are controlled by inverter circuits, and energy saving and high efficiency are being promoted. In particular, in the automobile industry, hybrid vehicles (hereinafter referred to as HEVs) that run on electric motors and engines have been introduced into the market, and the development of technologies relating to energy saving and high efficiency has been activated.

  Since such a HEV electric motor has a high operating voltage range of several hundred volts, a metallized film capacitor having high withstand voltage and low loss electric characteristics as a capacitor used in connection with such an electric motor. In addition, the trend of adopting metalized film capacitors with a very long life was also conspicuous due to the demand for maintenance-free in the market.

  FIG. 5 is a sectional view showing the structure of a conventional metallized film capacitor of this type. In FIG. 5, 10a and 10b are metal vapor deposition electrodes, and these metal vapor deposition electrodes 10a and 10b are wound metallization. It is formed by vapor-depositing aluminum metal on one side of dielectric films 13a and 13b of one metallized film and the other metallized film constituting the film capacitor, excluding the insulation margins 14a and 14b at one end. The respective electrodes are drawn out through the metallicon electrodes 16a and 16b on the surface.

  In addition, one metallized film in which the metal vapor-deposited electrode 10a is formed on one side of the dielectric film 13a and the other metallized film in which the metal vapor-deposited electrode 10b is formed on one side of the dielectric film 13b are arranged in the width direction. The metallicon electrodes 16a and 16b are formed by metal spraying on both end faces of the element by securing a predetermined amount of displacement, and the metallicon electrodes 16a and 16b are overlapped with each other so as to spread slightly (generally around several mm). This is to increase the mechanical and electrical coupling strength with the vapor deposition electrodes 10a and 10b.

  In FIG. 5, 15a and 15b are non-evaporated slits that do not deposit metal, and 12a and 12b are divided electrodes that are divided into a plurality by the slits 15a and 15b.

As prior art document information related to the invention of this application, for example, Patent Document 1 is known.
JP 2004-134561 A

  However, in the above conventional metallized film capacitor, when a heat treatment process is performed after the metallized film capacitor is manufactured, a plurality of wound metallized films shrink, but an interlayer gap occurs between the metallized films. As a result, there is a problem that the vibration of the element and its variation increase when a voltage is applied.

  This is because a metallized film is formed by metallized electrodes 16a and 16b in order to produce a device by winding a pair of metallized films, and to perform a heat treatment process after forming metallicon electrodes 16a and 16b on both end faces of the device. This is because the heat shrinkage is limited before the metallicon electrodes 16a and 16b are formed, and the metallized film shrinks to the end in the width direction and curls. Therefore, the mechanical and electrical coupling strength between the metallicon electrodes 16a and 16b and the metal vapor deposition electrodes 10a and 10b cannot be secured.

  SUMMARY OF THE INVENTION It is an object of the present invention to provide a metallized film capacitor and a method for manufacturing the same, which can solve the conventional problems and can reduce the interlayer gap between the metallized films to improve the vibration resistance. Is.

  In order to solve the above-mentioned problems, the present invention comprises a device in which a pair of metallized films are wound, and metallicon electrodes formed on both end faces of the device, wherein the metallized film is in the width direction of the dielectric film. A metal-deposited electrode is formed so that an insulating margin part with a dielectric film exposed at one end remains continuously in the longitudinal direction, and a dam margin part by metal deposition is formed at the outermost end part of the insulating margin part. The metallized film is formed in a continuous manner in the longitudinal direction, and the metallized film is overlapped and wound in a pair so that the dam margin portions are opposite to each other.

  In addition, as a manufacturing method for manufacturing the metallized film capacitor, a pair of metallized films in which metal vapor-deposited electrodes are formed on a dielectric film are wound in a state where the metal vapor-deposited electrodes are opposed to each other through the dielectric film. After the device was manufactured by heat treatment, this device was heat-treated, and then metallized electrodes were formed on both end faces of the device by metal spraying.

  As described above, the metallized film capacitor according to the present invention has a structure in which a dam margin portion by metal deposition is provided at one end of the dielectric film, so that the portion mechanically and electrically coupled to the metallicon electrode is doubled. Strength can be doubled, and this ensures sufficient mechanical and electrical bond strength between the metallicon electrode and the metallized film even if a heat treatment step is performed before forming the metallicon electrode. Therefore, the effect of improving the vibration resistance by reducing the interlayer gap between the metallized films can be obtained.

(Embodiment 1)
Hereinafter, the first and third aspects of the present invention will be described with reference to the first embodiment.

  FIG. 1 is a cross-sectional view showing the configuration of a metallized film capacitor according to Embodiment 1 of the present invention, FIG. 2 is a developed perspective view showing the metallized film capacitor, and in FIGS. 2 is a metal vapor-deposited electrode continuously formed in the longitudinal direction except for one end side in the width direction of the dielectric film 1, and 3 is a low-voltage formed on one end of the metal vapor-deposited electrode 2. The resistance portion 4 is an insulating margin portion formed of a non-metal vapor deposition portion provided on one end side of the dielectric film 1, and 5 is continuously formed in the longitudinal direction by metal vapor deposition on the outermost end portion which is a part of the insulating margin portion 4. It is the dam margin part formed, and the metallized film is comprised by this.

  Then, the metallized films configured as described above are paired, the metal vapor deposition electrodes 2 are opposed to each other with the dielectric film 1 therebetween, and the dam margin portions 5 are overlapped in opposite directions, and the pair By forming the metallized film by winding the metallized film so that both ends in the width direction are aligned, and forming the metallicon electrode 6 by metal spraying on both end surfaces of the element, the present embodiment A metallized film capacitor is constructed.

  The metallized film capacitor according to the present embodiment configured as described above has a dam margin portion 5 by metal vapor deposition at one end of the dielectric film 1 and has a configuration in which the respective metallized films are stacked without shifting. In addition to the low resistance portion 3 formed on one end side of the metal deposition electrode 2, the dam margin portion 5 is also coupled to the metallicon electrode 6 so that the coupling portion is doubled. As a result, the mechanical and electrical coupling strength between the metallicon electrode 6 and the metallized film can be doubled to ensure a sufficient contact.

  Further, the provision of the dam margin portion 5 doubles the portion that is coupled to the metallicon electrode 6, so that even if the metallized film is contracted by performing a heat treatment step before the metallicon electrode 6 is formed, the metallicon electrode 6 Since there are many parts to be bonded to each other, it is possible to secure sufficient bonding strength, which makes it possible to shrink the metallized film uniformly and reduce the interlayer gap between the metallized films. In addition, a special effect of being able to exhibit performance with excellent vibration resistance is achieved.

  As described above, the metallized film capacitor according to the present embodiment is improved in vibration resistance by reducing the interlayer gap between the metallized films by performing the heat treatment step before forming the metallicon electrode 6, and at the same time the dam margin portion. 5 is provided, and the overlapping is performed with the shift amount being zero, so that the mechanical and electrical coupling strength of the metallicon electrode 6 can be sufficiently secured.

  FIG. 3 shows the result of confirming the transition of the tan δ change in the forced charge / discharge test of the metalized film capacitor according to the present embodiment configured as described above in comparison with the conventional product as a comparative example. As test conditions, after 10 cycles of forced charge / discharge at each voltage from DC 0V, the charge voltage was increased by 50V.

  As is clear from FIG. 3, the conventional product has a rapid tan δ change from the point when the charge / discharge voltage exceeds 300V, whereas the metallized film capacitor according to the present embodiment has a gradual increase to around 500V. Thus, it can be seen that the mechanical and electrical coupling strength of the metallicon electrode is sufficiently obtained.

  Table 1 shows the results of measuring noise and vibration when a 10 kHz-10 A-DC650V is energized in the metalized film capacitor according to the present embodiment, compared with a conventional product as a comparative example.

  As is clear from Table 1, the metallized film capacitor according to the present embodiment can reduce the interlayer gap by performing a heat treatment before forming the metallicon electrode. It can be seen that both the vibrations are reduced and the vibration resistance is excellent.

(Embodiment 2)
Hereinafter, the invention according to the fourth aspect of the present invention will be described with reference to the second embodiment.

  In the present embodiment, the configuration of the dam margin portion provided in the metallized film used in the metallized film capacitor described in the first embodiment with reference to FIGS. 1 and 2 is partially different. Since other configurations are the same as those of the first embodiment, the same portions are denoted by the same reference numerals and detailed description thereof will be omitted, and only different portions will be described below with reference to the drawings.

  FIG. 4 is a cross-sectional view showing the configuration of the metallized film capacitor according to the second embodiment of the present invention. In FIG. 4, 7 is a dam margin portion, and this dam margin portion 7 is one end of the metal vapor deposition electrode 2. The thickness t is the same as the thickness t of the low resistance portion 3 formed by increasing the thickness.

  In the metallized film capacitor according to the present embodiment configured as described above, in addition to the effect obtained by the metallized film capacitor according to the first embodiment, the thickness of the dam margin portion 7 is the same as the thickness of the low resistance portion 3. As a result, it is possible to further increase the coupling portion with the metallicon electrode 6, so that the mechanical and electrical coupling strength of the metallicon electrode 6 can be further improved. It plays.

  FIG. 3 shows the result of confirming the transition of the tan δ change in the forced charge / discharge test of the metalized film capacitor according to the present embodiment configured as described above in comparison with the conventional product as a comparative example.

  As is clear from FIG. 3, the conventional product has a rapid tan δ change from the point when the charge / discharge voltage exceeds 300V, whereas the metallized film capacitor according to the present embodiment has a gradual increase to around 500V. Thus, it can be seen that the mechanical and electrical coupling strength of the metallicon electrode is sufficiently obtained.

  Table 2 shows the results of measuring noise and vibration when the metalized film capacitor according to the present embodiment is energized with 10 kHz-10 A-DC 650 V compared to a conventional product as a comparative example.

  As is clear from Table 2, the metallized film capacitor according to the present embodiment can reduce the interlayer gap by performing a heat treatment before forming the metallicon electrode. It can be seen that both the vibrations are reduced and the vibration resistance is excellent.

  The metallized film capacitor and the manufacturing method thereof according to the present invention have the effects of improving the vibration resistance, increasing the reliability of the contact of the metallicon electrode, and increasing the capacity. It is useful as a capacitor in the automotive field.

Sectional drawing which showed the structure of the metallized film capacitor by Embodiment 1 of this invention An exploded perspective view showing the metalized film capacitor Characteristic chart showing forced charge / discharge test results of the same metallized film capacitor Sectional drawing which showed the structure of the metallized film capacitor by Embodiment 2 of this invention Sectional view showing the structure of a conventional metallized film capacitor

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Dielectric film 2 Metal vapor deposition electrode 3 Low resistance part 4 Insulation margin part 5, 7 Dam margin part 6 Metallicon electrode

Claims (5)

An element in which a pair of metallized films having a metal vapor deposition electrode formed on a dielectric film is wound so that the metal vapor deposition electrode faces through the dielectric film, and both ends of the element are formed by metal spraying. In a metallized film capacitor composed of a metallicon electrode, the metallized film is formed so that an insulation margin part consisting of a non-metal vapor-deposited part with the dielectric film exposed at one end in the width direction of the dielectric film remains continuously in the longitudinal direction. In addition to forming a metal vapor deposition electrode, a dam margin portion by metal vapor deposition is continuously formed in the longitudinal direction at the outermost end portion which is a part of the insulation margin portion, and the metalized film is formed on the dam margin portion. A metallized film capacitor that is rolled up in a pair so as to be in opposite directions. The metallized film capacitor according to claim 1, wherein the pair of metallized films are overlapped so that both ends in the width direction are aligned. Claims in which a low resistance portion having a resistance value lower than the film resistance value of the metal deposition electrode is continuously provided in the longitudinal direction at the other end in a direction different from the dam margin portion provided at one end in the width direction of the metallized film. Item 4. A metallized film capacitor according to Item 1. The metallized film capacitor according to claim 3, wherein the thickness of the dam margin portion provided at one end in the width direction of the metalized film is the same as the thickness of the low resistance portion provided in the metal vapor deposition electrode. A device is manufactured by winding a pair of metallized films in which a metal vapor deposition electrode is formed on a dielectric film in a state where the metal vapor deposition electrodes face each other with the dielectric film interposed therebetween. A method for producing a metallized film capacitor in which metallized electrodes are formed by metal spraying on both end faces.

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