JP2008244393A - Manufacturing method for semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To process easily a semiconductor substrate side of a laminated substrate of the semiconductor substrate and an insulating substrate. <P>SOLUTION: A semiconductor device 10 includes the semiconductor substrate 1 wherein a semiconductor device is formed on one surface 1a thereof, an adhesive layer 2 provided on one surface 1a of the semiconductor substrate 1, and an insulating substrate 3 laminated with the adhesive layer 2. When manufacturing the semiconductor device 10, a process wherein, before performing a dry process for the other surface 1b of the semiconductor substrate 1, a conductor layer 4 and an adhesive resin layer 5 covering the insulating substrate 3 are formed on a side 3b opposite to a side 3a provided with the adhesive layer 2 of the insulating substrate 3, a process wherein the dry process is performed for the other surface 1b of the semiconductor substrate 1, wherein the insulating substrate 3 is laminated on the one surface 1a via the adhesive layer 2, while using an electrostatic chuck 11 at the opposite side 3b of the insulating substrate 3, and a process wherein, after the dry process, the conductor layer 4 and the adhesive resin layer 5 provided to the opposite side 3b of the insulating substrate 3 are removed, are performed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to improve the workability of a substrate when an optical semiconductor device is manufactured in a wafer level package in a dry process process.

  Since the conventional dry process uses plasma processing, the substrate temperature rises due to heating by plasma irradiation. Therefore, the substrate is cooled by cooling the substrate stage and putting helium (He) gas as a heat medium between the substrate and the stage. At this time, it is necessary to fix the substrate and seal He between the substrate stages. As this method, an electrostatic chuck (ESC: Electro Static Chuck) is used. The ESC is means for electrostatically attracting (electrostatically attracting) the substrate by applying a voltage to the substrate and moving operating ions, sealing the substrate cooling He gas, and cooling the substrate.

  On the other hand, when an optical semiconductor device is packaged at a wafer level, it is necessary to form a through wiring and the like, and there are processes such as etching for forming micro holes by a dry process. Further, the wafer level package of the optical semiconductor device uses a glass substrate bonded to the semiconductor device side, and the wafer processing is performed on the bonded substrate when forming a through wiring or the like. At this time, since a substrate obtained by bonding a semiconductor substrate such as silicon (Si) and an insulating substrate such as a glass substrate is used, when performing plasma processing on the Si (semiconductor substrate) side, the glass substrate becomes the substrate stage side. , Electrostatic adsorption becomes difficult. Therefore, there is a problem that the electrostatic chuck is difficult to apply to the Si / glass bonded substrate.

  The present invention has been made in view of the above circumstances, and provides a method for manufacturing a semiconductor device capable of easily processing a semiconductor substrate side for a substrate obtained by bonding a semiconductor substrate and an insulating substrate. Let it be an issue.

In order to solve the above problems, the present invention provides a semiconductor substrate having a semiconductor device formed on one surface thereof, an adhesive layer provided on the surface of the semiconductor substrate on which the semiconductor device is formed, and an adhesive layer attached to the adhesive layer. A method of manufacturing a semiconductor device comprising a combined insulating substrate,
Forming a conductive layer covering the insulating substrate and an adhesive resin layer covering the conductive layer on a side opposite to the side on which the adhesive layer is provided of the insulating substrate;
While using an electrostatic chuck on the opposite side of the insulating substrate, dry processing is performed on the other surface of the semiconductor substrate on which the insulating substrate is bonded to the one surface via the adhesive layer. Process,
And a step of removing the conductor layer and the adhesive resin layer provided on the opposite side of the insulating substrate.

The present invention also provides a semiconductor substrate having a semiconductor device formed on one surface thereof, an adhesive layer provided on the surface of the semiconductor substrate on which the semiconductor device is formed, and an insulating substrate bonded to the adhesive layer. A method of manufacturing a semiconductor device comprising:
A first adhesive resin layer covering the insulating substrate on a side opposite to the side on which the adhesive layer is provided of the insulating substrate; a conductor layer having a slit on the first adhesive resin layer; and Forming a second adhesive resin layer bonded to the first adhesive resin layer via the slit on the conductor layer;
While using an electrostatic chuck on the opposite side of the insulating substrate, dry processing is performed on the other surface of the semiconductor substrate on which the insulating substrate is bonded to the one surface via the adhesive layer. Process,
And a step of removing the first adhesive resin layer, the conductor layer, and the second adhesive resin layer provided on the opposite side of the insulating substrate. .

According to the present invention, in a substrate in which a semiconductor substrate and an insulating substrate are bonded together, a conductor layer is provided on the insulating substrate side during processing by a dry process for forming a through electrode or the like in the semiconductor substrate. The electrostatic chuck of the bonded substrate can be easily performed. Further, by providing the conductor layer on the insulating substrate side, the insulating substrate can be protected during the dry process. Furthermore, by providing a resin layer on the conductor layer, the conductor layer can be protected and resistance to the wet process can be ensured.
When the conductor layer is sandwiched between two resin layers, the conductor layer can be removed only by peeling off the resin layer.

  The present invention will be described below with reference to the drawings based on the best mode.

<First embodiment>
First, a first embodiment of the method for manufacturing a semiconductor device of the present invention will be described. FIG. 1 is a cross-sectional view schematically showing an example of a semiconductor device (bonded substrate). FIG. 2 is a drawing for explaining a first embodiment of the method for manufacturing a semiconductor device of the present invention, and FIG. 2 (a) is a cross section schematically showing a state in which a conductor layer and an adhesive resin layer are provided on a bonded substrate. FIG. 2B is a cross-sectional view schematically showing a state in which the substrate of FIG. 2A is adsorbed to the substrate stage and dry processing is performed, and FIG. 2C is from the substrate of FIG. It is sectional drawing which shows typically the state which removed the conductor layer and the adhesive resin layer.

  In this embodiment, as shown in FIG. 1, the semiconductor device 10 includes a bonded substrate in which a semiconductor substrate 1 and an insulating substrate 3 are bonded via an adhesive layer 2, and the adhesive layer 2 of the semiconductor substrate 1. A semiconductor device (not shown) is formed on the surface (one surface) 1a on which is provided.

  Here, as the semiconductor substrate 1, a substrate made of various semiconductors such as silicon (Si) can be used. On one surface 1a of the semiconductor substrate 1, semiconductor devices such as a CCD, a CMOS, a pressure sensor, an acceleration sensor, and a gyro sensor are formed.

  Examples of the adhesive constituting the adhesive layer 2 include acrylic resins, epoxy resins, and silicone resins. The adhesive layer 2 may be arranged so as to provide a space 2a in a predetermined region. This space 2a is a three-dimensional space such as a cavity or a groove, for example, and when the adhesive layer 2 is formed, an extra adhesive is stopped inside to prevent the substrate 1 and 3 from protruding to the outside. it can. In addition, the space 2a can be relaxed by absorbing the stress in the bonded substrate 10 in the space 2a. The semiconductor device can be provided in a region where the space 2a is formed, or can be provided in a region where the adhesive layer 2 is formed.

  As the insulating substrate 3, a substrate made of an insulating material such as glass, ceramic, or silicon carbide (SiC) can be used. By bonding the insulating substrate 3 to the side 1a on which the semiconductor device is provided, the semiconductor device or the like can be protected or the semiconductor substrate 1 can be reinforced. When an optical semiconductor device such as a CCD or CMOS is formed on the semiconductor device 10, a transparent material is used as the insulating substrate 3 in the wavelength band used for the semiconductor device.

  The method for manufacturing the semiconductor device 10 according to this embodiment is characterized in that the following steps (1), (2), and (3) are performed.

(1) As shown in FIG. 2 (a), before performing the processing process on the other surface 1b of the semiconductor substrate 1, on the side 3b opposite to the side 3a on which the adhesive layer 2 of the insulating substrate 3 is provided, A conductor layer 4 covering the insulating substrate 3 and an adhesive resin layer 5 covering the conductor layer 4 are formed.

  Here, the conductor layer 4 serves as a protective layer against physical damage to the insulating substrate 3 and the role of facilitating electrostatic chucking by the substrate stage 11 when performing the dry process process in (2). For example, it can be formed by applying or printing a conductive paste, attaching a conductive sheet, sputtering or vapor deposition of a metal such as aluminum (Al).

  In addition, there is a wet process (acid cleaning, alkali cleaning, etc.) before and after the dry process treatment, and the adhesive resin layer that further covers the conductor layer 4 as a device in which the conductor layer 4 is not affected by the chemical used in the wet process. 5 is formed. Here, the adhesive resin layer 5 is an adhesive resin layer that can be peeled off from the conductor layer 4. As the peelable adhesive, an ultraviolet peelable adhesive can be used. By using an ultraviolet peeling type adhesive material that has a proven record in dicing sheets or the like, the peeling process can be performed without contaminating the insulating substrate 3.

  The conductor layer 4 and the adhesive resin layer 5 may be formed after the insulating substrate 3 and the semiconductor substrate 1 are bonded together via the adhesive layer 2. Alternatively, the conductor layer 4 and the adhesive resin layer 5 may be formed alone on the insulating substrate 3, and then the insulating substrate 3 and the semiconductor substrate 1 may be bonded via the adhesive layer 2.

(2) As shown in FIG. 2 (b), while using the electrostatic chuck 11 on the side 3b of the insulating substrate 3 on which the conductor layer 4 and the adhesive resin layer 5 are formed according to (1), A dry process treatment is performed on the other surface 1b of the semiconductor substrate 1 in which the insulating substrate 3 is bonded to the surface 1a via the adhesive layer 2.

In the present embodiment, since the conductive layer 4 is formed on the insulating substrate 3, the bonded substrate 10 can be electrostatically attracted and held using an electrostatic chuck (ESC). At this time, there is no dead space on the other surface 1b of the semiconductor substrate 1, and the other surface 1b can be processed entirely.
Further, the surface 3 b of the insulating substrate 3 is protected by the conductor layer 4 and the adhesive resin layer 5 during the process step. In addition, since the adhesive resin layer 5 is provided so as to cover the conductor layer 4 and the conductor layer 4 can be protected, when the wet process is performed before and after the dry process treatment, the conductor layer 4 contains the chemical solution used in the wet process. Not affected. According to this embodiment, it is possible to perform processing of the semiconductor (Si) surface such as production of a through wiring (not shown) in the semiconductor substrate 1 by using a dry process and a wet process in combination.
Examples of the dry process treatment include plasma treatment, dry etching, conductor and insulating layer deposition, ashing, surface treatment, and the like. Examples of the wet process treatment include acid washing, alkali washing, water washing, and wet etching treatment.

(3) As shown in FIG. 2C, the conductor layer 4 and the adhesive resin layer 5 of the insulating substrate 3 are removed after the dry process treatment of (2).
In this embodiment, the adhesive resin layer 5 can be easily peeled by using a peelable adhesive resin for the adhesive resin layer 5. Moreover, the removal of the conductor layer 4 can use the method according to the material, for example, wet etching etc. are mentioned.

<Second embodiment>
In the present invention, the method of the second embodiment described below can be used as a method capable of more easily removing the conductor layer 4. FIG. 3 is a drawing for explaining a second embodiment of the method for manufacturing a semiconductor device according to the present invention. FIG. 3 (a) shows a first adhesive resin layer, a conductor layer, and a second adhesive resin layer on a bonded substrate. FIG. 3B is a cross-sectional view schematically showing a state in which a dry process treatment is performed by adsorbing the substrate of FIG. 3A to the substrate stage, and FIG. FIG. 4 is a cross-sectional view schematically showing a state where the first adhesive resin layer, the conductor layer, and the second adhesive resin layer are removed from the substrate of FIG.

  In the present embodiment, the configuration of the semiconductor device 10 made of a bonded substrate can be the same as that in the first embodiment.

  The manufacturing method of the semiconductor device 10 according to the second embodiment is characterized by performing the following steps (1), (2), and (3).

(1) As shown in FIG. 3A, before performing the processing process of the other surface 1b of the semiconductor substrate 1, on the side 3b opposite to the side 3a on which the adhesive layer 2 of the insulating substrate 3 is provided, A first adhesive resin layer 6 covering the insulating substrate 3, a conductor layer 7 having a slit 7a on the first adhesive resin layer 6, and a first adhesive resin on the conductor layer 7 via the slit 7a. A second adhesive resin layer 8 bonded to the layer 6 is formed.

Here, the conductor layer 7 serves as a protective layer against physical damage to the insulating substrate 3 and the role of facilitating electrostatic chucking by the substrate stage 11 when performing the dry process process in (2). For example, it can be formed by applying or printing a conductive paste, attaching a conductive sheet having a slit, sputtering or vapor deposition using a metal mask such as aluminum (Al). Further, the slit 7a may be formed by removing a part of the conductor after the conductor layer 7 having no slit is formed.
It is possible not to provide the slit 7a in the conductor layer 7, but by providing the slit 7a so that the first adhesive resin layer 6 and the second adhesive resin layer 8 can be bonded to each other. These layers can be peeled and removed easily and reliably.

The first adhesive resin layer 6 has a role of facilitating peeling of the conductor layer 7 and is an adhesive resin layer that can be peeled off from the insulating substrate 3.
In addition, there is a wet process (acid cleaning, alkali cleaning, etc.) in the steps before and after the dry process treatment, and as a device in which the conductor layer 7 is not affected by the chemical solution used in the wet process, the second layer covering the conductor layer 7 is further provided. An adhesive resin layer 8 is formed. Since the second adhesive resin layer 8 can be peeled off together with the conductor layer 7 by peeling off the first adhesive resin layer 6, it may not be a peelable adhesive resin.

  The formation of the first adhesive resin layer 6, the conductor layer 7, and the second adhesive resin layer 8 may be performed after the insulating substrate 3 and the semiconductor substrate 1 are bonded together via the adhesive layer 2. Further, the first adhesive resin layer 6, the conductor layer 7, and the second adhesive resin layer 8 are formed on the insulating substrate 3 independently, and then the insulating substrate 3 and the semiconductor substrate via the adhesive layer 2 Bonding with 1 may be performed.

(2) As shown in FIG. 3B, on the side 3b on which the first adhesive resin layer 6, the conductor layer 7 and the second adhesive resin layer 8 of the insulating substrate 3 are formed according to the above (1). While using the electrostatic chuck 11, a dry process treatment is performed on the other surface 1b of the semiconductor substrate 1 in which the insulating substrate 3 is bonded to the one surface 1a via the adhesive layer 2.

In this embodiment, since the conductor layer 7 is formed on the insulating substrate 3, the bonded substrate 10 can be electrostatically attracted and held using an electrostatic chuck (ESC). At this time, there is no dead space on the other surface 1b of the semiconductor substrate 1, and the other surface 1b can be processed entirely.
Further, the surface 3 b of the insulating substrate 3 is protected by the conductor layer 7 and the adhesive resin layers 6 and 8 during the process step. In addition, since the second adhesive resin layer 8 is provided so as to cover the conductor layer 7 and the conductor layer 7 can be protected, when the wet process is performed before and after the dry process treatment, the conductor layer 7 is subjected to the wet process. It is not affected by the chemical used. According to this embodiment, it is possible to perform processing of the semiconductor (Si) surface such as production of a through wiring (not shown) in the semiconductor substrate 1 by using a dry process and a wet process in combination.
Examples of the dry process treatment include plasma treatment, dry etching, conductor and insulating layer deposition, ashing, surface treatment, and the like. Examples of the wet process treatment include acid washing, alkali washing, water washing, and wet etching treatment.

(3) As shown in FIG. 3C, the first adhesive resin layer 6, the conductor layer 7 and the second adhesive resin layer 8 are removed from the insulating substrate 3 after the dry process treatment (2). Remove.
In this embodiment, the first adhesive resin layer 6, the conductor layer 7, and the second adhesive resin layer 8 can be easily peeled together by using a peelable adhesive resin for the first adhesive resin layer 6. Is possible. For this reason, a process such as wet etching is not required for removing the conductor layer 7, and the number of steps can be reduced.

As described above, according to the method for manufacturing a semiconductor device of the present invention, in a substrate in which the semiconductor substrate 1 and the insulating substrate 3 are bonded together, processing by a dry process for forming a through electrode or the like on the semiconductor substrate 1 is performed. At this time, by providing the conductor layers 4 and 7 on the insulating substrate 1 side, the electrostatic chuck 11 of the bonded substrate 10 can be easily performed. Further, by providing the conductor layers 4 and 7 on the insulating substrate 1 side, the insulating substrate 3 can be protected during the dry process. Furthermore, by providing the resin layers 5 and 8 on the conductor layers 4 and 7 (lower side of the drawings in FIGS. 2 and 3), the conductor layers 4 and 7 can be protected and resistance to the wet process can be secured. it can.
As shown in FIG. 3, when the conductor layer 7 is sandwiched between two resin layers 6 and 8, the conductor layer 7 can be removed only by peeling off the resin layer.

  The present invention can be used for manufacturing a semiconductor device having a bonded structure of a semiconductor substrate and an insulating substrate. Moreover, it can utilize suitably when manufacturing the optical system semiconductor device with which the glass substrate was bonded together with a wafer level package.

It is sectional drawing which shows typically an example of a semiconductor device (bonding board | substrate). (A) is sectional drawing which shows the state which provided the conductor layer and the adhesive resin layer in the bonding board | substrate, (b) is a mode that the board | substrate of (a) is made to adsorb | suck to a board | substrate stage, and a dry process process is performed typically (C) is sectional drawing which shows typically the state which removed the conductor layer and the adhesive resin layer from the board | substrate of (a). (A) is sectional drawing which shows typically the state which provided the 1st adhesive resin layer, the conductor layer, and the 2nd adhesive resin layer in the bonding board | substrate, (b) adsorb | suck the board | substrate of (a) to a substrate stage FIG. 5C is a cross-sectional view schematically showing how the dry process treatment is performed, and FIG. 5C schematically shows a state where the first adhesive resin layer, the conductor layer, and the second adhesive resin layer are removed from the substrate of FIG. It is sectional drawing shown.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Adhesive layer, 3 ... Insulating substrate, 4 ... Conductor layer, 5 ... Adhesive resin layer, 6 ... 1st adhesive resin layer, 7 ... Conductor layer, 7a ... Slit, 8 ... 2nd Adhesive resin layer, 10... Semiconductor device (bonded substrate), 11. Electrostatic chuck (substrate stage).

Claims (2)

A semiconductor device comprising: a semiconductor substrate having a semiconductor device formed on one surface; an adhesive layer provided on the surface of the semiconductor substrate on which the semiconductor device is formed; and an insulating substrate bonded to the adhesive layer. A manufacturing method of
Forming a conductive layer covering the insulating substrate and an adhesive resin layer covering the conductive layer on a side opposite to the side on which the adhesive layer is provided of the insulating substrate;
While using an electrostatic chuck on the opposite side of the insulating substrate, dry processing is performed on the other surface of the semiconductor substrate on which the insulating substrate is bonded to the one surface via the adhesive layer. Process,
Removing the conductor layer and the adhesive resin layer provided on the opposite side of the insulating substrate;
A method for manufacturing a semiconductor device, comprising: A semiconductor device comprising: a semiconductor substrate having a semiconductor device formed on one surface; an adhesive layer provided on the surface of the semiconductor substrate on which the semiconductor device is formed; and an insulating substrate bonded to the adhesive layer. A manufacturing method of
A first adhesive resin layer covering the insulating substrate on a side opposite to the side on which the adhesive layer is provided of the insulating substrate; a conductor layer having a slit on the first adhesive resin layer; and Forming a second adhesive resin layer bonded to the first adhesive resin layer via the slit on the conductor layer;
While using an electrostatic chuck on the opposite side of the insulating substrate, dry processing is performed on the other surface of the semiconductor substrate on which the insulating substrate is bonded to the one surface via the adhesive layer. Process,
Removing the first adhesive resin layer, the conductor layer and the second adhesive resin layer provided on the opposite side of the insulating substrate;
A method for manufacturing a semiconductor device, comprising:

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