JP2008218023A - Switching device and its manufacturing method - Google Patents

Switching device and its manufacturing method Download PDF

Info

Publication number
JP2008218023A
JP2008218023A JP2007050090A JP2007050090A JP2008218023A JP 2008218023 A JP2008218023 A JP 2008218023A JP 2007050090 A JP2007050090 A JP 2007050090A JP 2007050090 A JP2007050090 A JP 2007050090A JP 2008218023 A JP2008218023 A JP 2008218023A
Authority
JP
Japan
Prior art keywords
contact
spherical particles
metal
manufacturing
switching element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007050090A
Other languages
Japanese (ja)
Other versions
JP4956229B2 (en
Inventor
Yoshiharu Nakamura
芳春 中村
Narimasa Iwamoto
成正 岩本
Hiroshi Iwano
博 岩野
Ryoji Imai
良治 今井
Tomohiro Nakatani
友洋 中谷
Masahiko Suzumura
正彦 鈴村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP2007050090A priority Critical patent/JP4956229B2/en
Publication of JP2008218023A publication Critical patent/JP2008218023A/en
Application granted granted Critical
Publication of JP4956229B2 publication Critical patent/JP4956229B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Manufacture Of Switches (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a switching device and its manufacturing method capable of preventing adhesion of contacts without increasing junction resistance. <P>SOLUTION: The switching device has a metallic contact comprising metallic fixed contacts 10, 10 formed on the upper surface of a first substrate 1 made of a glass material; and a metallic movable contact 20 formed on the lower surface of a second substrate 2 made of the glass material and disposed in face to face with the first substrate 1, and set opposite to the fixed contacts 10, 10. A shot-peening treatment is conducted to spray a lot of fine metallic and spherical particles onto the upper surface of the first substrate 1. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、マイクロリレー等のスイッチング素子及びその製造方法に関する。   The present invention relates to a switching element such as a micro relay and a manufacturing method thereof.

従来から、シリコン基板上にマイクロマシニング技術を利用して形成されて電気回路のスイッチングを行なうマイクロリレーが知られており、例えば特許文献1に開示されている。この種のマイクロリレーは、例えば図4に示すように、第一のシリコン基板100の表面(図4における上面)に形成された金属製の一対の固定接点101,101と、前記第一のシリコン基板100と対向するように配置される第二のシリコン基板102の表面(図4における下面)に形成されて固定接点101,101と対向する金属製の可動接点103とから成る金属接点部を有し、電磁力や静電引力によって固定接点101,101と可動接点103とを接離させることで固定接点101,101間の導通・非導通を切り替えて接点の開閉を行うものである。
特開2003−249157号公報
2. Description of the Related Art Conventionally, a micro relay that is formed on a silicon substrate by using a micromachining technique and performs switching of an electric circuit is known. For example, as shown in FIG. 4, this type of microrelay includes a pair of metal fixed contacts 101, 101 formed on the surface of the first silicon substrate 100 (the upper surface in FIG. 4), and the first silicon There is a metal contact portion formed on the surface (the lower surface in FIG. 4) of the second silicon substrate 102 disposed so as to face the substrate 100 and composed of the fixed contacts 101 and the metal movable contact 103 facing the 101. Then, the fixed contacts 101, 101 and the movable contact 103 are brought into and out of contact with each other by electromagnetic force or electrostatic attraction, thereby switching between conduction / non-conduction between the fixed contacts 101, 101 to open / close the contacts.
JP 2003-249157 A

しかしながら、上記従来例では、固定接点101,101及び可動接点103各々において互いに接離する接触面が柔らかい場合、接点の開閉を重ねると接点同士が固着する虞があった。これを解決するために固定接点101及び可動接点103の接触面を硬化させることが考えられるが、この場合には接触面に凹凸が生じることで接触面積が小さくなり、数百万回程度開閉して凹凸が少なくなるまでの間は接触抵抗が高いという問題があった。   However, in the above conventional example, when the contact surfaces contacting and separating each other in each of the fixed contacts 101 and 101 and the movable contact 103 are soft, there is a possibility that the contacts adhere to each other when the contacts are opened and closed repeatedly. In order to solve this problem, it is conceivable to harden the contact surfaces of the fixed contact 101 and the movable contact 103. In this case, the contact area is reduced due to unevenness on the contact surface, and the contact surface is opened and closed several million times. There is a problem that the contact resistance is high until the unevenness is reduced.

本発明は、上記の点に鑑みて為されたもので、接触抵抗を増大することなく接点同士の固着を防止することのできるスイッチング素子及びその製造方法を提供することを目的とする。   The present invention has been made in view of the above points, and it is an object of the present invention to provide a switching element that can prevent contact points from sticking without increasing contact resistance and a method for manufacturing the same.

請求項1の発明は、上記目的を達成するために、固定接点及び可動接点から成る金属接点部を有し、固定接点及び可動接点を接離させることで接点を開閉するスイッチング素子の製造方法であって、金属接点部を形成する第一の工程と、形成された金属接点部における固定接点と可動接点との互いに対向する何れかの表面に無数の微細な金属製の球状粒子を噴射する第二の工程とを備えたことを特徴とする。   In order to achieve the above object, a first aspect of the present invention is a method of manufacturing a switching element having a metal contact portion composed of a fixed contact and a movable contact, and opening and closing the contact by moving the fixed contact and the movable contact. A first step of forming a metal contact portion, and injecting countless fine metal spherical particles onto any surface of the formed metal contact portion facing each other of the fixed contact and the movable contact. And a second step.

請求項2の発明は、請求項1の発明において、第一の工程は、金属接点部をウェハ上に形成する工程であることを特徴とする。   The invention of claim 2 is the invention of claim 1, wherein the first step is a step of forming a metal contact portion on the wafer.

請求項3の発明は、請求項2の発明において、第一の工程と第二の工程との間において、金属接点部が形成されるウェハの一面において金属接点部を除いた全面にレジストを形成する第三の工程を備えたことを特徴とする。   According to a third aspect of the present invention, in the second aspect of the present invention, between the first step and the second step, a resist is formed on the entire surface excluding the metal contact portion on one surface of the wafer on which the metal contact portion is formed. The third step is provided.

請求項4の発明は、請求項1乃至3の何れか1項の発明において、球状粒子は、金属接点部に用いられる金属材料との間で合金を形成し難い金属材料から成ることを特徴とする。   The invention of claim 4 is the invention of any one of claims 1 to 3, characterized in that the spherical particles are made of a metal material that is difficult to form an alloy with the metal material used for the metal contact portion. To do.

請求項5の発明は、請求項1乃至3の何れか1項の発明において、球状粒子は、球状粒子を噴射させる対象となる接点に用いられる金属材料から成ることを特徴とする。   A fifth aspect of the invention is characterized in that, in the invention of any one of the first to third aspects, the spherical particles are made of a metal material used for a contact to which the spherical particles are to be injected.

請求項6の発明は、請求項1乃至3の何れか1項の発明において、球状粒子は、球状粒子を噴射させる対象となる接点と対向する接点に用いられる金属材料から成ることを特徴とする。   The invention of claim 6 is the invention according to any one of claims 1 to 3, wherein the spherical particles are made of a metal material used for a contact point opposite to a contact point to which the spherical particles are to be injected. .

請求項7の発明は、請求項1乃至3の何れか1項の発明において、球状粒子は、高い硬度を有し且つ比重の大きい金属材料から成ることを特徴とする。   The invention of claim 7 is the invention of any one of claims 1 to 3, characterized in that the spherical particles are made of a metal material having high hardness and high specific gravity.

請求項8の発明は、請求項1乃至7の何れか1項のスイッチング素子の製造方法を用いて製造されることを特徴とする。   The invention according to claim 8 is manufactured using the method for manufacturing a switching element according to any one of claims 1 to 7.

請求項1の発明によれば、固定接点及び可動接点の互いに対向する何れかの表面に無数の微細な金属製の球状粒子を噴射する工程を備えたので、接点の表面が硬化するとともに接点表面の凹凸を低減することができ、したがって接触抵抗を増大させることなく接点同士の固着を防ぐことができる。   According to the first aspect of the present invention, since the step of injecting countless fine metal spherical particles onto any one of the surfaces of the fixed contact and the movable contact facing each other is provided, the surface of the contact is cured and the contact surface The unevenness of the contacts can be reduced, and therefore, contact between the contacts can be prevented without increasing the contact resistance.

請求項3の発明によれば、金属接点部が形成されるウェハの一面において金属接点部を除いた全面にレジストを形成したので、金属接点部のみに球状粒子を噴射することができて不必要な加工が為されないようにすることができる。   According to the invention of claim 3, since the resist is formed on the entire surface of the wafer where the metal contact portion is formed except for the metal contact portion, spherical particles can be sprayed only on the metal contact portion, which is unnecessary. Can be prevented from being processed.

請求項4の発明によれば、球状粒子が金属接点部に用いられる金属材料との間で合金を形成し難い金属材料から成るので、球状粒子と接点との合金化による接触抵抗の増大を防ぐことができる。   According to invention of Claim 4, since spherical particle | grains consist of a metal material which cannot form an alloy easily with the metal material used for a metal contact part, the increase in contact resistance by alloying with spherical particle | grains and a contact is prevented. be able to.

請求項5の発明によれば、球状粒子が球状粒子を噴射させる対象となる接点に用いられる金属材料から成るので、球状粒子と接点との合金化による接触抵抗の増大を防ぐことができる。   According to the fifth aspect of the present invention, since the spherical particles are made of the metal material used for the contact to which the spherical particles are to be injected, an increase in contact resistance due to alloying of the spherical particles and the contacts can be prevented.

請求項6の発明によれば、球状粒子が球状粒子を噴射させる対象となる接点と対向する接点に用いられる金属材料から成るので、接点表面の凹凸の状態を接点の開閉を所定の回数だけ行った場合の凹凸の状態に近づけることができる。   According to the sixth aspect of the present invention, since the spherical particles are made of a metal material used for the contact opposite to the contact for which the spherical particles are to be ejected, the contact surface unevenness is opened and closed a predetermined number of times. It can be close to the uneven state of the case.

請求項7の発明によれば、球状粒子が高い硬度を有し且つ比重の大きい金属材料から成るので、球状粒子の径を小さくしても加工に必要な運動エネルギーを十分に得ることができ、したがって接点の表面の凹凸を更に低減することができる。   According to the invention of claim 7, since the spherical particles are made of a metal material having a high hardness and a large specific gravity, the kinetic energy necessary for processing can be sufficiently obtained even if the diameter of the spherical particles is reduced, Therefore, the unevenness of the contact surface can be further reduced.

請求項8の発明によれば、請求項1乃至7の何れか1項の効果を奏するスイッチング素子を提供することができる。   According to invention of Claim 8, the switching element which has an effect of any one of Claims 1 thru | or 7 can be provided.

以下、本発明に係るスイッチング素子の実施形態について図面を用いて説明する。但し、以下の説明では、図1における上下を上下方向と定めるものとする。本実施形態は、従来例と同様に、ガラス材料から成る第一の基板1の上面に形成された金属製の一対の固定接点10,10と、第一の基板1と対向するように配置される第二の基板2の下面に形成されて固定接点10,10と対向する金属製の可動接点20とから成る金属接点部を有し、電磁力や静電引力によって固定接点10,10と可動接点20とを接離させることで固定接点10,10間の導通・非導通を切り替えて接点の開閉を行うものである。本実施形態の固定接点10,10の第一の基板1側の金属層は例えば金から形成され、最表層10aはロジウムから形成される。また、可動接点20の最表層(図1における下面)はルテニウムから形成される。   Hereinafter, embodiments of a switching element according to the present invention will be described with reference to the drawings. However, in the following description, the vertical direction in FIG. 1 is defined as the vertical direction. In the present embodiment, like the conventional example, a pair of metal fixed contacts 10 and 10 formed on the upper surface of the first substrate 1 made of a glass material are disposed so as to face the first substrate 1. Formed on the lower surface of the second substrate 2 and having a metal contact portion composed of a metal movable contact 20 facing the fixed contacts 10, 10 and movable with the fixed contacts 10, 10 by electromagnetic force or electrostatic attraction. The contact 20 is opened and closed by switching between conduction and non-conduction between the fixed contacts 10 and 10 by bringing the contact 20 into and out of contact with each other. The metal layer on the first substrate 1 side of the fixed contacts 10 and 10 of the present embodiment is made of, for example, gold, and the outermost layer 10a is made of rhodium. Further, the outermost layer (the lower surface in FIG. 1) of the movable contact 20 is made of ruthenium.

尚、本実施形態は従来技術で説明したマイクロリレーに本発明の技術思想を適用したものであり、その基本的構造は周知であるので、ここでは詳細な説明を省略する。但し、本発明の技術思想はマイクロリレー以外のスイッチング素子にも適用可能であることは言うまでもない。以下では本発明の要旨であるスイッチング素子の製造方法について説明する。   In this embodiment, the technical idea of the present invention is applied to the microrelay described in the prior art, and the basic structure thereof is well known, so detailed description thereof is omitted here. However, it goes without saying that the technical idea of the present invention can be applied to switching elements other than micro relays. Below, the manufacturing method of the switching element which is the summary of this invention is demonstrated.

先ず、図2(a)に示すように、第一の基板1の下面をサンドブラスト法で加工することによって貫通孔11を厚み方向に貫設し、該貫通孔11の内面に例えば銅めっきを施した後に、貫通孔11の上側に固定接点10,10を形成する。次に、図2(b)に示すように、固定接点10,10のみが露出するように固定接点10,10を除いた第一の基板1上面全体にレジスト12を形成する。尚、第一の基板1の厚み寸法は約数百μmm〜数mm、貫通孔11の直径は約数十μmm〜数百μmmで形成されるのが望ましい。   First, as shown in FIG. 2A, the lower surface of the first substrate 1 is processed by sandblasting to penetrate the through hole 11 in the thickness direction, and the inner surface of the through hole 11 is subjected to, for example, copper plating. After that, the fixed contacts 10 and 10 are formed on the upper side of the through hole 11. Next, as shown in FIG. 2B, a resist 12 is formed on the entire top surface of the first substrate 1 except for the fixed contacts 10 and 10 so that only the fixed contacts 10 and 10 are exposed. The thickness dimension of the first substrate 1 is preferably about several hundred μm to several mm, and the diameter of the through hole 11 is preferably about several tens μm to several hundred μm.

その後、図2(c)に示すように、レジスト12が形成された第一の基板1の上面に対して、無数の微細な金属製の球状粒子3を噴射する、所謂ショットピーニング加工を施すことで固定接点10,10の表面を改質硬化させるとともに表面の凹凸を低減させる。ここで、ショットピーニング加工とは、ショット材と言われる微細な金属製の球状粒子3をショット加速装置(図示せず)で加速させて対象物に噴射することで、対象物の表面を改質硬化させる加工法である。本実施形態では、空圧を利用することでショット材である球状粒子3を加速させており、空圧は約1.5atm〜5atmである。また、本実施形態の球状粒子3はロジウムから成り、その直径は約数百nm〜数十μmである。   Thereafter, as shown in FIG. 2 (c), so-called shot peening is performed on the upper surface of the first substrate 1 on which the resist 12 is formed, by spraying countless fine metal spherical particles 3. Thus, the surfaces of the fixed contacts 10 and 10 are modified and cured, and the surface irregularities are reduced. Here, the shot peening process is a modification of the surface of an object by accelerating fine metal spherical particles 3 called a shot material with a shot accelerator (not shown) and injecting the object onto the object. A processing method for curing. In the present embodiment, the spherical particles 3 that are shot materials are accelerated by using air pressure, and the air pressure is about 1.5 atm to 5 atm. The spherical particles 3 of the present embodiment are made of rhodium and have a diameter of about several hundred nm to several tens of μm.

上述のように、固定接点10,10の表面に無数の微細な金属製の球状粒子3を噴射することで、固定接点10,10の表面を硬化させるとともに表面の凹凸を低減させることができるので、接触抵抗を増大させることなく接点同士の固着を防ぐことができる。また、球状粒子3を構成する金属材料を固定接点10,10の最表層10aを構成するロジウムとしたので、球状粒子3と固定接点10,10の最表層10aとが合金化するのを防ぐことができ、接触抵抗の増大を防止できる。更に、第一の基板1の固定接点10,10を除いた全面にレジスト12を形成したので、固定接点10,10のみにショットピーニング加工を施すことができ、不必要な加工が為されないようにすることができる。   As described above, by injecting countless fine metal spherical particles 3 onto the surfaces of the fixed contacts 10 and 10, the surfaces of the fixed contacts 10 and 10 can be cured and the surface irregularities can be reduced. It is possible to prevent the contacts from sticking without increasing the contact resistance. Further, since the metal material constituting the spherical particles 3 is rhodium constituting the outermost layer 10a of the fixed contacts 10, 10, it is possible to prevent the spherical particles 3 and the outermost layer 10a of the fixed contacts 10, 10 from being alloyed. And increase in contact resistance can be prevented. Further, since the resist 12 is formed on the entire surface of the first substrate 1 except for the fixed contacts 10, 10, only the fixed contacts 10, 10 can be subjected to shot peening so that unnecessary processing is not performed. can do.

ところで、本実施形態の球状粒子3は、固定接点10,10の最表層10aを構成する金属材料と同じ金属材料で形成されているが、固定接点10,10の最表層10aと合金化し難い他の金属材料で形成されても構わない。また、球状粒子3を可動接点20の最表層の金属材料(ここではルテニウム)と同じ金属材料で形成してもよく、この場合は固定接点10,10の表面の凹凸の状態を接点の開閉を所定の回数(例えば数百万回)行った場合の凹凸の状態に近づけることができる。   By the way, the spherical particles 3 of the present embodiment are formed of the same metal material as that of the outermost layer 10a of the fixed contacts 10, 10, but are difficult to alloy with the outermost layer 10a of the fixed contacts 10, 10. It may be formed of any metal material. Further, the spherical particles 3 may be formed of the same metal material as the outermost layer metal material (here, ruthenium) of the movable contact 20, and in this case, the surface of the fixed contacts 10, 10 can be opened and closed. It can be close to the uneven state when it is performed a predetermined number of times (for example, several million times).

更には、球状粒子3を例えばイリジウム等の高硬度で且つ比重の大きい金属材料で形成しても構わない。この場合は、図3に示すように、球状粒子3の直径を小さくしてもショットピーニング加工に必要な運動エネルギーを十分に得ることができるので、球状粒子3を小さくした分だけ固定接点10,10の表面の凹凸を更に低減することができる。   Furthermore, the spherical particles 3 may be formed of a metal material having high hardness and high specific gravity, such as iridium. In this case, as shown in FIG. 3, even if the diameter of the spherical particles 3 is reduced, sufficient kinetic energy required for the shot peening process can be obtained. The unevenness on the surface of 10 can be further reduced.

尚、本実施形態では固定接点10,10にショットピーニング加工を施した場合について説明しているが、可動接点20に上述のショットピーニング加工を施しても良く、固定接点10,10に加工を施した場合と同様の効果を奏することができる。   In this embodiment, the case where the fixed contacts 10 and 10 are subjected to shot peening is described. However, the movable contact 20 may be subjected to the above-described shot peening, and the fixed contacts 10 and 10 may be processed. The same effect as that of the case can be obtained.

本発明のスイッチング素子の実施形態を示す断面図である。It is sectional drawing which shows embodiment of the switching element of this invention. 同上の製造方法を示す説明図で、(a)はレジストを形成する前の状態を示す断面図で、(b)はレジストを形成した状態を示す断面図で、(c)は球状粒子の噴射時を示す断面図である。It is explanatory drawing which shows a manufacturing method same as the above, (a) is sectional drawing which shows the state before forming a resist, (b) is sectional drawing which shows the state which formed the resist, (c) is injection of a spherical particle. It is sectional drawing which shows time. 同上の製造方法において異なる球状粒子を用いた場合を示す断面図である。It is sectional drawing which shows the case where a different spherical particle is used in the manufacturing method same as the above. 従来のスイッチング素子を示す断面図である。It is sectional drawing which shows the conventional switching element.

符号の説明Explanation of symbols

1 第一の基板(ウェハ)
10 固定接点
2 第二の基板(ウェハ)
20 可動接点
3 球状粒子
1 First substrate (wafer)
10 Fixed contact 2 Second substrate (wafer)
20 Moving contact 3 Spherical particles

Claims (8)

固定接点及び可動接点から成る金属接点部を有し、固定接点及び可動接点を接離させることで接点を開閉するスイッチング素子の製造方法であって、金属接点部を形成する第一の工程と、形成された金属接点部における固定接点と可動接点との互いに対向する何れかの表面に無数の微細な金属製の球状粒子を噴射する第二の工程とを備えたことを特徴とするスイッチング素子の製造方法。   A method of manufacturing a switching element that has a metal contact portion composed of a fixed contact and a movable contact, and opens and closes the contact by moving the fixed contact and the movable contact, and the first step of forming the metal contact portion; And a second step of injecting countless fine metal spherical particles onto any one of the surfaces of the fixed contact and the movable contact facing each other in the formed metal contact portion. Production method. 前記第一の工程は、金属接点部をウェハ上に形成する工程であることを特徴とする請求項1記載のスイッチング素子の製造方法。   2. The method of manufacturing a switching element according to claim 1, wherein the first step is a step of forming a metal contact portion on a wafer. 前記第一の工程と第二の工程との間において、金属接点部が形成されるウェハの一面において金属接点部を除いた全面にレジストを形成する第三の工程を備えたことを特徴とする請求項2記載のスイッチング素子の製造方法。   Between the first step and the second step, there is provided a third step of forming a resist on the entire surface excluding the metal contact portion on one surface of the wafer on which the metal contact portion is formed. The manufacturing method of the switching element of Claim 2. 前記球状粒子は、金属接点部に用いられる金属材料との間で合金を形成し難い金属材料から成ることを特徴とする請求項1乃至3の何れか1項に記載のスイッチング素子の製造方法。   4. The method of manufacturing a switching element according to claim 1, wherein the spherical particles are made of a metal material that hardly forms an alloy with a metal material used for the metal contact portion. 5. 前記球状粒子は、球状粒子を噴射させる対象となる接点に用いられる金属材料から成ることを特徴とする請求項1乃至3の何れか1項に記載のスイッチング素子の製造方法。   The method for manufacturing a switching element according to any one of claims 1 to 3, wherein the spherical particles are made of a metal material used for a contact to which the spherical particles are jetted. 前記球状粒子は、球状粒子を噴射させる対象となる接点と対向する接点に用いられる金属材料から成ることを特徴とする請求項1乃至3の何れか1項に記載のスイッチング素子の製造方法。   4. The method of manufacturing a switching element according to claim 1, wherein the spherical particles are made of a metal material used for a contact point opposite to a contact point to which the spherical particles are jetted. 5. 前記球状粒子は、高い硬度を有し且つ比重の大きい金属材料から成ることを特徴とする請求項1乃至3の何れか1項に記載のスイッチング素子の製造方法。   The method for manufacturing a switching element according to claim 1, wherein the spherical particles are made of a metal material having high hardness and high specific gravity. 請求項1乃至7の何れか1項のスイッチング素子の製造方法を用いて製造されることを特徴とするスイッチング素子。   A switching element manufactured using the method for manufacturing a switching element according to claim 1.
JP2007050090A 2007-02-28 2007-02-28 Switching element and manufacturing method thereof Expired - Fee Related JP4956229B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007050090A JP4956229B2 (en) 2007-02-28 2007-02-28 Switching element and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007050090A JP4956229B2 (en) 2007-02-28 2007-02-28 Switching element and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JP2008218023A true JP2008218023A (en) 2008-09-18
JP4956229B2 JP4956229B2 (en) 2012-06-20

Family

ID=39837846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007050090A Expired - Fee Related JP4956229B2 (en) 2007-02-28 2007-02-28 Switching element and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP4956229B2 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61296618A (en) * 1985-06-25 1986-12-27 松下電工株式会社 Making of modified contact material
JPH11105296A (en) * 1997-10-02 1999-04-20 Brother Ind Ltd Manufacture of cavity plate and ink jet head
JP2003201549A (en) * 2002-01-07 2003-07-18 Rikogaku Shinkokai Method for manufacturing metallic material with nanocrystalline structure, and metallic material with nanocrystalline structure
JP2003217375A (en) * 2002-01-21 2003-07-31 Sumitomo Electric Ind Ltd Electric contact and breaker using the same
JP2003242850A (en) * 2002-02-20 2003-08-29 Omron Corp Contact for electrical switch and its manufacturing method as well as electrical switch
JP2003249157A (en) * 2002-02-22 2003-09-05 Toppan Printing Co Ltd Microrelay and its manufacturing method
JP2006278087A (en) * 2005-03-29 2006-10-12 Japan Aviation Electronics Industry Ltd Contact member, connector, and contact member surface reforming method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61296618A (en) * 1985-06-25 1986-12-27 松下電工株式会社 Making of modified contact material
JPH11105296A (en) * 1997-10-02 1999-04-20 Brother Ind Ltd Manufacture of cavity plate and ink jet head
JP2003201549A (en) * 2002-01-07 2003-07-18 Rikogaku Shinkokai Method for manufacturing metallic material with nanocrystalline structure, and metallic material with nanocrystalline structure
JP2003217375A (en) * 2002-01-21 2003-07-31 Sumitomo Electric Ind Ltd Electric contact and breaker using the same
JP2003242850A (en) * 2002-02-20 2003-08-29 Omron Corp Contact for electrical switch and its manufacturing method as well as electrical switch
JP2003249157A (en) * 2002-02-22 2003-09-05 Toppan Printing Co Ltd Microrelay and its manufacturing method
JP2006278087A (en) * 2005-03-29 2006-10-12 Japan Aviation Electronics Industry Ltd Contact member, connector, and contact member surface reforming method

Also Published As

Publication number Publication date
JP4956229B2 (en) 2012-06-20

Similar Documents

Publication Publication Date Title
US11679209B2 (en) Aperture plate for a nebulizer
CN107208274B (en) Low temperature gas injection method using mask
US9006844B2 (en) Process and structure for high temperature selective fusion bonding
WO2008123260A1 (en) Silver-coated material for movable contact component and method for manufacturing such silver-coated material
JP5198777B2 (en) Method for forming out-of-plane structure on substrate
JP4956229B2 (en) Switching element and manufacturing method thereof
JP4154399B2 (en) Contact member, connector, and surface modification method for contact member
US8453318B2 (en) Method for making a planar coil
Schiavone et al. Fabrication of electrodeposited Ni–Fe cantilevers for magnetic MEMS switch applications
US8994126B2 (en) Microelectromechanical system and method
WO2004056698A3 (en) Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component
US20130048602A1 (en) Method of Manufacturing a Metallized Ceramic Substrate
JP2008111154A (en) Method for forming coating film
JP6000519B2 (en) Manufacturing method of semiconductor device
JP2009132945A (en) Method for forming film-formed body by aerosol deposition process
US9102119B2 (en) Encapsulated beam and method of forming
TWI433732B (en) Method for manufacturing matte substrate
JP2000232016A (en) Magnetism impressing device and its manufacture
CN100409421C (en) Method of fixing a sealing object to a base object
KR101733574B1 (en) Manufacturing method for metal including pattern and metal including pattern using there
Youn et al. Microstructuring of 45-µm-Deep Dual Damascene Openings in SU-8/Si by UV-Assisted Thermal Imprinting with Opaque Mold
JP3929276B2 (en) Metal mask
JP2009203305A (en) Method for producing particle-introduced body
JP2016207380A5 (en)
WO2003072486A3 (en) Mems devices and methods of manufacture

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090924

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101005

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110603

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110614

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110808

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20120112

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120221

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120316

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150323

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees