JP2008211062A - Laminated ceramic package and its manufacturing method - Google Patents

Laminated ceramic package and its manufacturing method Download PDF

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JP2008211062A
JP2008211062A JP2007047737A JP2007047737A JP2008211062A JP 2008211062 A JP2008211062 A JP 2008211062A JP 2007047737 A JP2007047737 A JP 2007047737A JP 2007047737 A JP2007047737 A JP 2007047737A JP 2008211062 A JP2008211062 A JP 2008211062A
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multilayer ceramic
ceramic substrate
cap
electronic device
sealing
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Hitoshi Noguchi
仁志 野口
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a laminated ceramic package that achieves further reduction in man-hour than a conventional one, and its manufacturing method. <P>SOLUTION: The laminated ceramic package is composed of a laminated ceramic substrate 1 in which a cavity 10 is formed on its surface, a cap 2 joined to the surface of the laminated ceramic substrate 1, and an electronic device 3 stored in the cavity 10 of the laminated ceramic substrate 1. The rear face of the laminated ceramic substrate 1 has a plurality of external electrodes 7 connected with the electronic device 3 through each conductor filling part 6. The electronic device 3 is arranged on the inner face of the cap 2. A plurality of internal electrodes 5 are interposed between opposing faces of the laminated ceramic substrate 1 and the cap 2 so as to connect the electronic device 3 with each conductor filling part 6 of the laminated ceramic substrate 1. A metal sealing part 4 is also interposed between the opposing faces of the laminated ceramic substrate and the cap so as to seal a space formed between the laminated ceramic substrate 1 and the cap 2 while surrounding the internal electrodes 5. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、積層セラミック基板とキャップとの間に形成されるキャビティに電子デバイスを収容してなる積層セラミックパッケージ及びその製造方法に関するものである。   The present invention relates to a multilayer ceramic package in which an electronic device is accommodated in a cavity formed between a multilayer ceramic substrate and a cap, and a method for manufacturing the same.

従来、図13(c)に示す如く、表面にキャビティ(104)が凹設された積層セラミック基板(100)と、該積層セラミック基板(100)のキャビティ(104)を覆って積層セラミック基板(100)の表面に接合されたキャップ(101)と、積層セラミック基板(100)のキャビティ(104)に収容された弾性表面波素子等の電子デバイス(102)とから構成される積層セラミックパッケージが知られている。
該積層セラミックパッケージにおいては、積層セラミック基板(100)の裏面に、電子デバイス(102)と電気的に繋がる複数の外部電極(図示省略)が形成されており、該積層セラミックパッケージを回路基板上に表面実装することが可能となっている。
Conventionally, as shown in FIG. 13C, a multilayer ceramic substrate (100) having a cavity (104) recessed on the surface, and a multilayer ceramic substrate (100) covering the cavity (104) of the multilayer ceramic substrate (100). A multilayer ceramic package comprising a cap (101) bonded to the surface of the ceramic substrate and an electronic device (102) such as a surface acoustic wave element housed in a cavity (104) of the multilayer ceramic substrate (100) is known. ing.
In the multilayer ceramic package, a plurality of external electrodes (not shown) electrically connected to the electronic device (102) are formed on the back surface of the multilayer ceramic substrate (100), and the multilayer ceramic package is disposed on the circuit board. Surface mounting is possible.

従来の積層セラミックパッケージの製造においては、図13(a)に示す如く、先ず、表面にキャビティ(104)が凹設された積層セラミック基板(100)を作製し、該積層セラミック基板(100)のキャビティ(104)に電子デバイス(102)を収容して、該電子デバイス(102)を接着剤(105)により積層セラミック基板(100)に固定する(ダイボンド工程)。
次に図13(b)の如く、電子デバイス(102)の複数の端子部を、積層セラミック基板(100)の表面に形成されている複数の電極部にワイヤー(103)を用いて連結する(ワイヤボンド工程)。
最後に、図13(c)に示す如く、積層セラミック基板(100)の表面に、キャビティ(104)を覆ってキャップ(101)を接合して、積層セラミック基板(100)とキャップ(101)の間に形成された空間を封止する(封止工程)。
特開平9−116377号公報[H03H9/25]
In the production of a conventional multilayer ceramic package, as shown in FIG. 13A, first, a multilayer ceramic substrate (100) having a cavity (104) recessed on the surface is produced, and the multilayer ceramic substrate (100) is manufactured. The electronic device (102) is accommodated in the cavity (104), and the electronic device (102) is fixed to the multilayer ceramic substrate (100) with an adhesive (105) (die bonding step).
Next, as shown in FIG. 13B, the plurality of terminal portions of the electronic device (102) are connected to the plurality of electrode portions formed on the surface of the multilayer ceramic substrate (100) using wires (103) (see FIG. 13B). Wire bonding process).
Finally, as shown in FIG. 13 (c), a cap (101) is joined to the surface of the multilayer ceramic substrate (100) so as to cover the cavity (104), and the multilayer ceramic substrate (100) and the cap (101) are joined. The space formed therebetween is sealed (sealing step).
JP-A-9-116377 [H03H9 / 25]

しかしながら、従来の積層セラミックパッケージにおいては、その製造において、図13(b)に示すワイヤボンド工程を実施した後に図13(c)に示す封止工程を実施する必要があるため、工数が多くなる問題があった。
そこで本発明の目的は、従来よりも工数の削減が可能な積層セラミックパッケージ及びその製造方法を提供することである。
However, in the conventional multilayer ceramic package, since it is necessary to perform the sealing process shown in FIG. 13C after the wire bonding process shown in FIG. There was a problem.
SUMMARY OF THE INVENTION An object of the present invention is to provide a multilayer ceramic package and a method for manufacturing the same, which can reduce the number of steps compared to the conventional art.

本発明に係る積層セラミックパッケージは、表面にキャビティ(10)が凹設された積層セラミック基板(1)と、該積層セラミック基板(1)のキャビティ(10)を覆って積層セラミック基板(1)の表面に接合されたキャップ(2)と、積層セラミック基板(1)のキャビティ(10)に収容された電子デバイス(3)とから構成され、積層セラミック基板(1)の裏面には、前記電子デバイス(3)と導電経路を経て繋がる複数の外部電極(7)が形成されている。
ここで、前記電子デバイス(3)はキャップ(2)の内面に配置されており、積層セラミック基板(1)とキャップ(2)の対向面間には、前記電子デバイス(3)を積層セラミック基板(1)内の導電経路と接続するための複数の内部電極(5)が介在すると共に、これらの内部電極(5)を包囲して、積層セラミック基板(1)とキャップ(2)の間に形成された空間を封止するための金属製の封止部(4)が介在している。
尚、前記複数の内部電極(5)は、具体的には、前記封止部(4)を形成する封止用金属と同一の金属から形成されている。
A multilayer ceramic package according to the present invention includes a multilayer ceramic substrate (1) having a cavity (10) recessed on a surface thereof, and a multilayer ceramic substrate (1) covering the cavity (10) of the multilayer ceramic substrate (1). It comprises a cap (2) bonded to the surface and an electronic device (3) accommodated in the cavity (10) of the multilayer ceramic substrate (1). The electronic device is disposed on the back surface of the multilayer ceramic substrate (1). A plurality of external electrodes (7) connected to (3) via conductive paths are formed.
Here, the electronic device (3) is disposed on the inner surface of the cap (2), and the electronic device (3) is disposed between the opposing surfaces of the multilayer ceramic substrate (1) and the cap (2). (1) A plurality of internal electrodes (5) for connecting to the conductive path in the space are interposed, and the internal electrodes (5) are surrounded to be interposed between the multilayer ceramic substrate (1) and the cap (2). A metal sealing portion (4) for sealing the formed space is interposed.
The plurality of internal electrodes (5) are specifically made of the same metal as the sealing metal forming the sealing portion (4).

上記本発明の積層セラミックパッケージの製造方法は、
内面に電子デバイス(3)を具えたキャップ(2)を作製すると共に、表面にキャビティ(10)が凹設されると共に裏面に複数の外部電極(7)が形成された積層セラミック基板(1)を作製する第1工程と、
積層セラミック基板(1)とキャップ(2)を接合して一体化することにより、キャップ(2)の電子デバイス(3)を積層セラミック基板(1)の複数の外部電極(7)に電気接続する第2工程
とを有し、前記第1工程では、積層セラミック基板(1)の表面に、キャップ(2)の内面に形成されている複数の電極パッドと対応させて、前記複数の外部電極(7)と導電経路を介して繋がる複数の接続金属パッド(68)を形成し、前記第2工程では、積層セラミック基板(1)の各接続金属パッド(68)とキャップ(2)の各電極パッドとを互いに接合させると共に、積層セラミック基板(1)とキャップ(2)の対向面間に、前記複数の接続金属パッド(68)を包囲して延びる封止金属枠部を介在させた状態で、前記接続金属パッド(68)と封止金属枠部を一旦溶融させた後に固化させる処理を施すことを特徴とする。
The manufacturing method of the multilayer ceramic package of the present invention described above,
A multilayer ceramic substrate (1) having a cap (2) having an electronic device (3) on the inner surface, a cavity (10) recessed in the front surface, and a plurality of external electrodes (7) formed on the rear surface A first step of producing
By joining and integrating the multilayer ceramic substrate (1) and the cap (2), the electronic device (3) of the cap (2) is electrically connected to the plurality of external electrodes (7) of the multilayer ceramic substrate (1). A second step, and in the first step, the surface of the multilayer ceramic substrate (1) is made to correspond to the plurality of electrode pads formed on the inner surface of the cap (2), and the plurality of external electrodes ( 7) A plurality of connection metal pads (68) connected to the conductive path via the conductive path are formed. In the second step, each connection metal pad (68) of the multilayer ceramic substrate (1) and each electrode pad of the cap (2) are formed. And a sealing metal frame portion surrounding and surrounding the plurality of connection metal pads (68) between the facing surfaces of the multilayer ceramic substrate (1) and the cap (2), The connecting metal pad (68) and the sealing metal frame are once melted and then solidified. Characterized in that the applied.

上記本発明の積層セラミックパッケージの製造方法において、第1工程では、キャップ(2)の内面に、予め作製された電子デバイス(3)を実装する方法により、或いはキャップ(2)上に電子デバイス(3)を積層によって形成する方法により、電子デバイス(3)を具えたキャップ(2)が作製される。   In the manufacturing method of the multilayer ceramic package of the present invention, in the first step, the electronic device (3) is mounted on the inner surface of the cap (2) by the method of mounting the electronic device (3) prepared in advance, or the electronic device ( The cap (2) including the electronic device (3) is manufactured by the method of forming 3) by lamination.

第2工程では、積層セラミック基板(1)とキャップ(2)の接合体にリフロー工程を施すことによって、積層セラミック基板(1)の各接続金属パッド(68)が一旦溶融すると共に、積層セラミック基板(1)とキャップ(2)の対向面間に介在する封止金属枠部が一旦溶融し、その後、これらの溶融金属が固化して、積層セラミック基板(1)とキャップ(2)とが一体化される。この様にして、接続金属パッド(68)が溶融固化して内部電極(5)となり、該内部電極(5)を介して、電子デバイス(3)が外部電極(7)と接続される。又、これと同時に、封止金属枠部が溶融固化して封止部(4)となり、積層セラミック基板(1)とキャップ(2)の間に形成される空間を周囲から封止する。   In the second step, by performing a reflow process on the joined body of the multilayer ceramic substrate (1) and the cap (2), each connection metal pad (68) of the multilayer ceramic substrate (1) is once melted and the multilayer ceramic substrate. The sealing metal frame portion interposed between the opposing surfaces of (1) and cap (2) is once melted, and then, these molten metals are solidified, so that the laminated ceramic substrate (1) and cap (2) are integrated. It becomes. In this manner, the connection metal pad (68) is melted and solidified to form the internal electrode (5), and the electronic device (3) is connected to the external electrode (7) through the internal electrode (5). At the same time, the sealing metal frame is melted and solidified to form the sealing portion (4), and the space formed between the multilayer ceramic substrate (1) and the cap (2) is sealed from the periphery.

具体的構成において、前記第1工程では、積層セラミック基板(1)の表面に、前記複数の接続金属パッド(68)を包囲する枠状の封止金属枠(8)を設置し、該封止金属枠(8)を前記接続金属パッド(68)と同時に溶融固化させて、前記封止金属枠部を形成する。   In a specific configuration, in the first step, a frame-shaped sealing metal frame (8) surrounding the plurality of connection metal pads (68) is installed on the surface of the multilayer ceramic substrate (1), and the sealing is performed. The metal frame (8) is melted and solidified simultaneously with the connection metal pad (68) to form the sealing metal frame portion.

上記具体的構成によれば、金型を用いた打ち抜き等によって容易に封止金属枠(8)を作製することが出来る。ここで、封止金属枠(8)は全体が平板状に形成されているので、積層セラミック基板(1)の表面に安定した状態で設置することが出来る。   According to the above specific configuration, the sealed metal frame (8) can be easily manufactured by punching using a mold or the like. Here, since the sealing metal frame (8) is formed in a flat plate shape as a whole, it can be stably placed on the surface of the multilayer ceramic substrate (1).

又、具体的構成において、積層セラミック基板(1)の表面に前記複数の接続金属パッド(68)を形成する工程は、積層セラミック基板(1)を表面から裏面まで貫通して導電経路を構成する複数の導体充填部(6)を形成する工程と、該積層セラミック基板(1)の表面に、前記複数の導体充填部(6)の基板表面側の露出面に対応する複数の丸孔(91)を有する平板状の治具(9)を設置すると共に、該治具(9)の複数の丸孔(91)にそれぞれ接続金属ボール(60)を収容し、該接続金属ボール(60)を溶融させた後、治具(9)を除去する工程とを有している。   In a specific configuration, the step of forming the plurality of connection metal pads (68) on the surface of the multilayer ceramic substrate (1) penetrates the multilayer ceramic substrate (1) from the front surface to the back surface to form a conductive path. A step of forming a plurality of conductor filling portions (6), and a plurality of round holes (91 corresponding to the exposed surface on the substrate surface side of the plurality of conductor filling portions (6) on the surface of the multilayer ceramic substrate (1). ) Having a flat plate-like jig (9) having a plurality of round holes (91) in the jig (9), and connecting metal balls (60) to each other. And a step of removing the jig (9) after melting.

上記具体的構成によれば、接続金属ボール(60)が溶融して、導体充填部(6)の表面に盛り上がることとなり、これが固化することにより、接続金属パッド(68)が形成される。ここで、接続金属ボール(60)は治具(9)の丸孔(91)に拘持されているので、接続金属ボール(60)の転がりが阻止されて、正確な位置決めが実現される。   According to the above specific configuration, the connection metal ball (60) melts and rises on the surface of the conductor filling portion (6), and solidifies to form the connection metal pad (68). Here, since the connection metal ball (60) is held by the round hole (91) of the jig (9), the connection metal ball (60) is prevented from rolling and accurate positioning is realized.

或いは、他の具体的構成において、積層セラミック基板(1)の表面に前記複数の接続金属パッド(68)を形成する工程は、積層セラミック基板(1)を表面から裏面まで貫通する導電経路の内、基板裏面側の経路を構成する複数の円柱状の導体充填部(6)と、該導体充填部(6)から基板表面に至る経路を構成する複数の円筒状の導体内周壁(69)とを形成する工程と、該積層セラミック基板(1)の複数の導電内周壁(69)の開口部にそれぞれ接続金属ボール(60)を収容し、該接続金属ボール(60)を溶融させる工程とを有している。   Alternatively, in another specific configuration, the step of forming the plurality of connection metal pads (68) on the surface of the multilayer ceramic substrate (1) includes the step of forming a conductive path that penetrates the multilayer ceramic substrate (1) from the front surface to the back surface. A plurality of cylindrical conductor filling portions (6) constituting a path on the back side of the substrate, and a plurality of cylindrical conductor inner peripheral walls (69) constituting a path from the conductor filling portion (6) to the substrate surface; And a step of accommodating the connection metal balls (60) in the openings of the plurality of conductive inner peripheral walls (69) of the multilayer ceramic substrate (1) and melting the connection metal balls (60), respectively. Have.

上記具体的構成によれば、接続金属ボール(60)が溶融して、導体内周壁(69)の内部に充填され、導体充填部(6)の表面に盛り上がることとなり、これが固化することにより、接続金属パッド(68)が形成される。ここで、接続金属ボール(60)は導体内周壁(69)の開口部に拘持されているので、接続金属ボール(60)の転がりが阻止されて、正確な位置決めが実現される。   According to the above specific configuration, the connecting metal ball (60) is melted and filled in the conductor inner peripheral wall (69) and rises to the surface of the conductor filling portion (6), which solidifies, A connecting metal pad (68) is formed. Here, since the connection metal ball (60) is held by the opening of the conductor inner peripheral wall (69), the connection metal ball (60) is prevented from rolling and accurate positioning is realized.

本発明に係る積層セラミックパッケージ及びその製造方法によれば、第2工程において、接続金属パッド(68)が溶融固化して内部電極(5)となり、該内部電極(5)によって電子デバイス(3)が外部電極(7)と接続されると同時に、封止金属枠部が溶融固化して封止部(4)となり、該封止部(4)によって積層セラミック基板(1)とキャップ(2)の間に形成される空間が封止されるので、ワイヤボンド工程の後に封止工程を実施していた従来の製造方法よりも工数が削減される。   According to the multilayer ceramic package and the manufacturing method thereof according to the present invention, in the second step, the connection metal pad (68) is melted and solidified to become the internal electrode (5), and the internal device (5) is used to form the electronic device (3). Is connected to the external electrode (7) and the sealing metal frame is melted and solidified to form the sealing portion (4). The sealing portion (4) allows the multilayer ceramic substrate (1) and the cap (2) to be connected. Since the space formed between the two is sealed, the number of steps is reduced as compared with the conventional manufacturing method in which the sealing step is performed after the wire bonding step.

以下、本発明の実施の形態につき、図面に沿って具体的に説明する。
本発明に係る積層セラミックパッケージは、図1に示す如く、表面にキャビティ(10)が凹設された積層セラミック基板(1)と、該積層セラミック基板(1)のキャビティ(10)を覆って積層セラミック基板(1)の表面に接合された平板状のキャップ(2)と、積層セラミック基板(1)のキャビティ(10)に収容された弾性表面波素子等の電子デバイス(3)とから構成される。
Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings.
As shown in FIG. 1, the multilayer ceramic package according to the present invention has a multilayer ceramic substrate (1) having a cavity (10) recessed on the surface and a multilayer covering the cavity (10) of the multilayer ceramic substrate (1). The plate-shaped cap (2) joined to the surface of the ceramic substrate (1) and an electronic device (3) such as a surface acoustic wave element housed in the cavity (10) of the multilayer ceramic substrate (1). The

キャップ(2)はセラミック基板から構成され、その内面、即ち積層セラミック基板(1)との対向面に、電子デバイス(3)が設置されている。
尚、キャップ(2)の内面には、電子デバイス(3)の複数の端子部と繋がる複数の電極パッド(図示省略)が形成されている。
The cap (2) is composed of a ceramic substrate, and the electronic device (3) is installed on the inner surface thereof, that is, the surface facing the multilayer ceramic substrate (1).
A plurality of electrode pads (not shown) connected to the plurality of terminal portions of the electronic device (3) are formed on the inner surface of the cap (2).

一方、積層セラミック基板(1)には、キャップ(2)の前記電極パッドと対応させて、積層セラミック基板(1)を貫通するスルーホールにAg等の導電材料を充填してなる複数の導体充填部(6)が形成されており、積層セラミック基板(1)の裏面には、各導体充填部(6)が露出する領域にそれぞれAg等からなる外部電極(7)が形成されている。   On the other hand, the multilayer ceramic substrate (1) is filled with a plurality of conductors formed by filling a through hole penetrating the multilayer ceramic substrate (1) with a conductive material such as Ag corresponding to the electrode pad of the cap (2). A portion (6) is formed, and an external electrode (7) made of Ag or the like is formed on the back surface of the multilayer ceramic substrate (1) in a region where each conductor filling portion (6) is exposed.

又、積層セラミック基板(1)とキャップ(2)の対向面間には、キャップ(2)の内面に形成されている前記複数の電極パッドと積層セラミック基板(1)の複数の導体充填部(6)とを互いに接続する複数の内部電極(5)が介在すると共に、これらの内部電極(5)を包囲して、積層セラミック基板(1)とキャップ(2)の間に形成された空間を封止するための金属製の封止部(4)が介在している。
ここで、内部電極(5)は、封止部(4)を形成するAuSnやAgSn等の封止用金属と同一の金属から形成されている。
In addition, between the opposing surfaces of the multilayer ceramic substrate (1) and the cap (2), the plurality of electrode pads formed on the inner surface of the cap (2) and a plurality of conductor filling portions (of the multilayer ceramic substrate (1)) ( 6) and a plurality of internal electrodes (5) connecting each other, and surrounding these internal electrodes (5), a space formed between the multilayer ceramic substrate (1) and the cap (2) is formed. A metal sealing portion (4) for sealing is interposed.
Here, the internal electrode (5) is formed of the same metal as the sealing metal such as AuSn or AgSn forming the sealing portion (4).

上記積層セラミックパッケージを回路基板(図示省略)に表面実装することにより、電子デバイス(3)は、内部電極(5)、導体充填部(6)及び外部電極(7)を介して、回路基板上の特定の電子回路と接続されることになる。   By surface mounting the multilayer ceramic package on a circuit board (not shown), the electronic device (3) can be mounted on the circuit board via the internal electrode (5), the conductor filling portion (6) and the external electrode (7). It will be connected to a specific electronic circuit.

図2〜図12は、上記積層セラミックパッケージの製造工程を示している。
図8に示す如く、第1工程では、内面に電子デバイス(3)を一体に具えたキャップ(2)を作製すると共に、表面にキャビティ(10)が凹設された積層セラミック基板(1)を作製する。尚、キャップ(2)の内面には、電子デバイス(3)の複数の端子部(図示省略)と電気的に繋がった複数の電極パッド(図示省略)が形成されている。
2 to 12 show a manufacturing process of the multilayer ceramic package.
As shown in FIG. 8, in the first step, a cap (2) having an electronic device (3) integrally formed on the inner surface and a multilayer ceramic substrate (1) having a cavity (10) recessed on the surface are prepared. Make it. A plurality of electrode pads (not shown) electrically connected to a plurality of terminal portions (not shown) of the electronic device (3) are formed on the inner surface of the cap (2).

ここで、電子デバイス(3)を一体に具えたキャップ(2)は、電子デバイス(3)とキャップ(2)とを別工程により作製した後、キャップ(2)の内面に電子デバイス(3)を実装することによって作製することが出来るが、キャップ(2)の内面に積層工程によって電子デバイス(3)を形成する方法により作成することも可能である。   Here, the cap (2) integrally provided with the electronic device (3) is produced on the inner surface of the cap (2) after the electronic device (3) and the cap (2) are produced by separate processes. However, it can also be produced by a method of forming the electronic device (3) on the inner surface of the cap (2) by a lamination process.

一方、積層セラミック基板(1)には、図8の如く、キャップ(2)の前記複数の電極パッドと対向する位置に、Agからなる複数の接合パッド(67)が形成されると共に該接合パッド(67)を覆って、AuSnからなる接続金属パッド(68)が形成されている。又、図6の如く、積層セラミック基板(1)の表面には、キャビティ(10)と複数の接続金属パッド(68)を包囲して、Agからなる枠状パッド(66)が形成されている。更に、図7の如く、積層セラミック基板(1)の裏面にはAgからなる複数の外部電極(7)が形成されている。そして、図8の如く、互いに対応する接合パッド(67)と外部電極(7)とが、Agからなる導体充填部(6)によって互いに接続されている。   On the other hand, as shown in FIG. 8, a plurality of bonding pads (67) made of Ag are formed on the multilayer ceramic substrate (1) at positions facing the plurality of electrode pads of the cap (2). A connection metal pad (68) made of AuSn is formed so as to cover (67). As shown in FIG. 6, a frame-like pad 66 made of Ag is formed on the surface of the multilayer ceramic substrate 1 so as to surround the cavity 10 and the plurality of connecting metal pads 68. . Further, as shown in FIG. 7, a plurality of external electrodes (7) made of Ag are formed on the back surface of the multilayer ceramic substrate (1). As shown in FIG. 8, the bonding pads (67) and the external electrodes (7) corresponding to each other are connected to each other by a conductor filling portion (6) made of Ag.

更に第1工程においては、図6に示す如く、積層セラミック基板(1)の輪郭形状に合わせて、AuSnからなる封止金属枠(8)を作製する。該封止金属枠(8)は、金型を用いてAuSn製の金属板に打ち抜き加工を施すことにより容易に作製すること出来る。
そして、積層セラミック基板(1)の表面に、複数の接続金属パッド(68)を包囲して封止金属枠(8)を設置し、該封止金属枠(8)を接続金属パッド(68)と同時に溶融固化させる。
Further, in the first step, as shown in FIG. 6, a sealing metal frame (8) made of AuSn is produced in accordance with the contour shape of the multilayer ceramic substrate (1). The sealing metal frame (8) can be easily produced by punching a metal plate made of AuSn using a mold.
A sealing metal frame (8) is installed on the surface of the multilayer ceramic substrate (1) so as to surround the plurality of connection metal pads (68), and the sealing metal frame (8) is connected to the connection metal pad (68). Simultaneously melt and solidify.

第2工程では、図8に示す如く積層セラミック基板(1)とキャップ(2)を接合せしめる。これによって、図9の如く、積層セラミック基板(1)のキャビティ(10)にキャップ(2)の電子デバイス(3)が収容されることになる。
又、キャップ(2)の各電極パッドと積層セラミック基板(1)の各接続金属パッド(68)とが互いに接合されると共に、キャップ(2)の外周部とセラミック基板(1)上の封止金属枠(8)とが互いに接合されることになる。
In the second step, the multilayer ceramic substrate (1) and the cap (2) are joined as shown in FIG. As a result, as shown in FIG. 9, the electronic device (3) of the cap (2) is accommodated in the cavity (10) of the multilayer ceramic substrate (1).
Further, each electrode pad of the cap (2) and each connection metal pad (68) of the multilayer ceramic substrate (1) are joined together, and the outer periphery of the cap (2) and the sealing on the ceramic substrate (1) are sealed. The metal frame (8) is joined to each other.

この状態で、積層セラミック基板(1)とキャップ(2)の接合体に対し、リフロー処理を施す。これによって、積層セラミック基板(1)の各接続金属パッド(68)と積層セラミック基板(1)上の封止金属枠(8)とが一旦溶融し、その後、これらの溶融金属が固化して、積層セラミック基板(1)とキャップ(2)とが一体化される。
この様にして、接続金属パッド(68)が溶融固化して前記内部電極(5)となり、該内部電極(5)を介して、電子デバイス(3)が外部電極(7)と接続される。又、これと同時に、封止金属枠(8)が溶融固化して前記封止部(4)となり、積層セラミック基板(1)とキャップ(2)の間に形成される空間が周囲から封止される。
この結果、図1に示す本発明の積層セラミックパッケージが完成する。
In this state, a reflow process is performed on the joined body of the multilayer ceramic substrate (1) and the cap (2). Thereby, each connection metal pad (68) of the multilayer ceramic substrate (1) and the sealing metal frame (8) on the multilayer ceramic substrate (1) are once melted, and then these molten metals are solidified. The multilayer ceramic substrate (1) and the cap (2) are integrated.
In this way, the connection metal pad (68) is melted and solidified to form the internal electrode (5), and the electronic device (3) is connected to the external electrode (7) through the internal electrode (5). At the same time, the sealing metal frame (8) is melted and solidified to form the sealing portion (4), and the space formed between the multilayer ceramic substrate (1) and the cap (2) is sealed from the periphery. Is done.
As a result, the multilayer ceramic package of the present invention shown in FIG. 1 is completed.

図2〜図5は、図8に示す積層セラミック基板(1)の製造工程を示している。
先ず図2(a)の如く、第1のグリーンシート(11)に複数のスルーホール(12)を開設した後、図2(b)の如く、各スルーホール(12)にAg製の導電ペースト(61)を充填する。その後、図2(c)の如く、グリーンシート(11)の裏面に、導電ペースト(61)の露出部に重ねてAg製の導電ペースト(62)を電極状に印刷する。
2 to 5 show the manufacturing process of the multilayer ceramic substrate (1) shown in FIG.
First, as shown in FIG. 2 (a), after a plurality of through holes (12) are opened in the first green sheet (11), an Ag conductive paste is formed in each through hole (12) as shown in FIG. 2 (b). Fill (61). After that, as shown in FIG. 2C, an Ag conductive paste (62) is printed on the back surface of the green sheet (11) in an electrode shape so as to overlap the exposed portion of the conductive paste (61).

又、図3(a)の如く第2のグリーンシート(13)に、1つの中央開口(14)と複数のスルーホール(15)とを開設した後、図3(b)の如く、各スルーホール(15)にAg製の導電ペースト(63)を充填する。その後、図3(c)の如く、グリーンシート(13)の表面に、導電ペースト(63)の露出部に重ねて導電ペースト(65)をパッド状に印刷すると共に、これらの導電ペースト(65)を包囲して導電ペースト(64)を枠状に印刷する。   In addition, after opening one central opening (14) and a plurality of through holes (15) in the second green sheet (13) as shown in FIG. 3 (a), each through hole as shown in FIG. 3 (b). Fill hole (15) with conductive paste (63) made of Ag. Thereafter, as shown in FIG. 3 (c), the conductive paste (65) is printed in a pad shape on the surface of the green sheet (13) so as to overlap the exposed portion of the conductive paste (63). The conductive paste (64) is printed in a frame shape.

次に図4に示す如く第1のグリーンシート(11)と第2のグリーンシート(13)とを接合せしめ、両グリーンシート(11)(13)を両側からプレスする。これによって、図5に示す一体の積層体が得られる。そして、この積層体に焼成を施し、更に金属露出面に対してAuメッキを施す。この結果、図8に示す積層セラミック基板(1)が得られる。ここで、パッド状の導電ペースト(65)が接合パッド(67)となり、枠状の導電ペースト(64)が枠状パッド(66)となり、電極状の導電ペースト(62)が外部電極(7)となる。尚、Auメッキ層は図示省略している。   Next, as shown in FIG. 4, the first green sheet (11) and the second green sheet (13) are joined, and both the green sheets (11) and (13) are pressed from both sides. Thereby, the integral laminated body shown in FIG. 5 is obtained. And this laminated body is baked and Au plating is further applied to the exposed metal surface. As a result, the multilayer ceramic substrate (1) shown in FIG. 8 is obtained. Here, the pad-like conductive paste (65) becomes the bonding pad (67), the frame-like conductive paste (64) becomes the frame-like pad (66), and the electrode-like conductive paste (62) becomes the external electrode (7). It becomes. Note that the Au plating layer is not shown.

図10及び図11は、積層セラミック基板(1)の表面に接合パッド(67)を設けることなく接続金属パッド(68)を形成する場合の工程を示している。
先ず、図10及び図11(a)に示す如く、各導体充填部(6)の露出面と対応する位置に複数の丸孔(91)を有するセラミック板からなる治具(9)を用意し、該治具(9)を積層セラミック基板(1)の表面に重ね合わせる。
次に図11(b)の如く治具(9)の各丸孔(91)にAuSn製の接続金属ボール(60)を収容し、該接続金属ボール(60)を溶融させた後、治具(9)を除去する。これによって、図11(c)に示す如く、各導体充填部(6)の露出面上に盛り上がる接続金属パッド(68)が形成されることになる。
尚、各導体充填部(6)の露出面にはAuメッキ層が形成されているが、図示省略している。
10 and 11 show a process in the case of forming the connection metal pad (68) without providing the bonding pad (67) on the surface of the multilayer ceramic substrate (1).
First, as shown in FIGS. 10 and 11A, a jig (9) made of a ceramic plate having a plurality of round holes (91) at a position corresponding to the exposed surface of each conductor filling portion (6) is prepared. The jig (9) is superposed on the surface of the multilayer ceramic substrate (1).
Next, as shown in FIG. 11 (b), AuSn connection metal balls (60) are accommodated in the respective round holes (91) of the jig (9), and after melting the connection metal balls (60), the jig Remove (9). As a result, as shown in FIG. 11 (c), the connecting metal pad (68) that rises on the exposed surface of each conductor filling portion (6) is formed.
An Au plating layer is formed on the exposed surface of each conductor filling portion (6), but is not shown.

上記工程によれば、接続金属ボール(60)は治具(9)の丸孔(91)に拘持されているので、接続金属ボール(60)の転がりが阻止されて、正確な位置決めが実現される。   According to the above process, since the connecting metal ball (60) is held in the round hole (91) of the jig (9), the connecting metal ball (60) is prevented from rolling and accurate positioning is realized. Is done.

又、図12は、積層セラミック基板(1)の表面に接合パッド(67)を設けることなく接続金属パッド(68)を形成する場合の他の工程を表わしている。
先ず、図12(a)に示す如く、積層セラミック基板(1)には、積層セラミック基板(1)の表面よりも所定距離だけ落ち込んだ高さまで、スルーホールにAgを充填してなる導体充填部(6)を形成すると共に、該導体充填部(6)の上面から積層セラミック基板(1)の表面までスルーホールの内周面を立ち上がるAg製の導体内周壁(69)を形成する。
次に、図12(b)の如く、積層セラミック基板(1)の各導体内周壁(69)の開口部にAuSn製の接続金属ボール(60)を収容し、該接続金属ボール(60)を溶融させる。これによって、図12(c)に示す如く、各導体充填部(6)の露出面上に盛り上がる接続金属パッド(68)が形成されることになる。
尚、各導体充填部(6)の露出面及び導体内周壁(69)の表面にはAuメッキ層が形成されているが、図示省略している。
FIG. 12 shows another process when the connection metal pad (68) is formed on the surface of the multilayer ceramic substrate (1) without providing the bonding pad (67).
First, as shown in FIG. 12 (a), the multilayer ceramic substrate (1) has a conductor-filled portion in which through holes are filled with Ag up to a height lowered by a predetermined distance from the surface of the multilayer ceramic substrate (1). (6) is formed, and an Ag inner peripheral wall (69) made of Ag that rises from the upper surface of the conductor filling portion (6) to the surface of the multilayer ceramic substrate (1) is formed.
Next, as shown in FIG. 12 (b), AuSn connection metal balls (60) are accommodated in the openings of the inner peripheral walls (69) of the respective conductors of the multilayer ceramic substrate (1), and the connection metal balls (60) are attached. Melt. As a result, as shown in FIG. 12C, a connection metal pad (68) that rises on the exposed surface of each conductor filling portion (6) is formed.
An Au plating layer is formed on the exposed surface of each conductor filling portion (6) and the surface of the conductor inner peripheral wall (69), which is not shown.

上記工程によれば、接続金属ボール(60)は導体内周壁(69)の開口部に拘持されているので、接続金属ボール(60)の転がりが阻止されて、正確な位置決めが実現される。   According to the above process, since the connection metal ball (60) is held by the opening of the conductor inner peripheral wall (69), the connection metal ball (60) is prevented from rolling and accurate positioning is realized. .

上述の如く、本発明に係る積層セラミックパッケージの製造方法によれば、第2工程において、接続金属パッド(68)が溶融固化して内部電極(5)となり、該内部電極(5)によって電子デバイス(3)が外部電極(7)と接続されると同時に、封止金属枠(8)が溶融固化して封止部(4)となり、該封止部(4)によって積層セラミック基板(1)とキャップ(2)の間に形成される空間が封止されるので、ワイヤボンド工程の後に封止工程を実施していた従来の製造方法よりも工数が削減される。
尚、封止金属枠(8)は、接続金属ボール(60)を溶融固化させる際に、積層セラミック基板(1)の表面に配置し、接続金属ボール(60)と同時に溶融固化させればよい。
As described above, according to the method for manufacturing a multilayer ceramic package according to the present invention, in the second step, the connection metal pad (68) is melted and solidified to become the internal electrode (5). At the same time that (3) is connected to the external electrode (7), the sealing metal frame (8) is melted and solidified to form the sealing portion (4), and the laminated ceramic substrate (1) is formed by the sealing portion (4). Since the space formed between the cap and the cap (2) is sealed, the number of man-hours is reduced as compared with the conventional manufacturing method in which the sealing step is performed after the wire bonding step.
The sealing metal frame (8) may be disposed on the surface of the multilayer ceramic substrate (1) when the connecting metal ball (60) is melted and solidified, and melted and solidified simultaneously with the connecting metal ball (60). .

本発明に係る積層セラミックパッケージの断面図である。1 is a cross-sectional view of a multilayer ceramic package according to the present invention. 積層セラミック基板の作製に用いる第1のグリーンシートの製造工程を示す図である。It is a figure which shows the manufacturing process of the 1st green sheet used for preparation of a multilayer ceramic substrate. 積層セラミック基板の作製に用いる第2のグリーンシートの製造工程を示す図であるIt is a figure which shows the manufacturing process of the 2nd green sheet used for preparation of a multilayer ceramic substrate. 第1のグリーンシートと第2のグリーンシートの接合工程を示す図である。It is a figure which shows the joining process of the 1st green sheet and the 2nd green sheet. 第1のグリーンシートと第2のグリーンシートの積層体を示す断面図である。It is sectional drawing which shows the laminated body of a 1st green sheet and a 2nd green sheet. 積層セラミック基板と封止金属枠の斜視図である。It is a perspective view of a multilayer ceramic substrate and a sealing metal frame. 積層セラミック基板の裏面を表わす斜視図である。It is a perspective view showing the back surface of a multilayer ceramic substrate. 積層セラミック基板とキャップの接合工程を示す断面図である。It is sectional drawing which shows the joining process of a laminated ceramic substrate and a cap. 積層セラミック基板とキャップの接合体の断面図である。It is sectional drawing of the laminated body of a laminated ceramic substrate and a cap. 治具の平面図である。It is a top view of a jig | tool. 積層セラミック基板上に封止金属パッドを形成する工程を示す一連の断面図である。It is a series of sectional views showing a process of forming a sealing metal pad on a multilayer ceramic substrate. 積層セラミック基板上に封止金属パッドを形成する他の工程を示す一連の断面図である。It is a series of sectional views showing another process of forming a sealing metal pad on a multilayer ceramic substrate. 従来の積層セラミックパッケージの製造工程を示す一連の断面図である。It is a series of sectional views showing a manufacturing process of a conventional multilayer ceramic package.

符号の説明Explanation of symbols

(1) 積層セラミック基板
(2) キャップ
(3) 電子デバイス
(4) 封止部
(5) 内部電極
(6) 導体充填部
(7) 外部電極
(10) キャビティ
(1) Multilayer ceramic substrate
(2) Cap
(3) Electronic devices
(4) Sealing part
(5) Internal electrode
(6) Conductor filling part
(7) External electrode
(10) Cavity

Claims (6)

表面にキャビティ(10)が凹設された積層セラミック基板(1)と、該積層セラミック基板(1)のキャビティ(10)を覆って積層セラミック基板(1)の表面に接合されたキャップ(2)と、積層セラミック基板(1)のキャビティ(10)に収容された電子デバイス(3)とから構成され、積層セラミック基板(1)の裏面には、前記電子デバイス(3)と導電経路を経て繋がる複数の外部電極(7)が形成されている積層セラミックパッケージにおいて、前記電子デバイス(3)はキャップ(2)の内面に配置されており、積層セラミック基板(1)とキャップ(2)の対向面間には、前記電子デバイス(3)を積層セラミック基板(1)内の導電経路と接続するための複数の内部電極(5)が介在すると共に、これらの内部電極(5)を包囲して、積層セラミック基板(1)とキャップ(2)の間に形成された空間を封止するための金属製の封止部(4)が介在することを特徴とする積層セラミックパッケージ。   A multilayer ceramic substrate (1) having a cavity (10) recessed on the surface, and a cap (2) covering the cavity (10) of the multilayer ceramic substrate (1) and bonded to the surface of the multilayer ceramic substrate (1) And an electronic device (3) accommodated in the cavity (10) of the multilayer ceramic substrate (1), and the back surface of the multilayer ceramic substrate (1) is connected to the electronic device (3) via a conductive path. In the multilayer ceramic package in which a plurality of external electrodes (7) are formed, the electronic device (3) is disposed on the inner surface of the cap (2), and the opposing surface of the multilayer ceramic substrate (1) and the cap (2). A plurality of internal electrodes (5) for connecting the electronic device (3) to the conductive path in the multilayer ceramic substrate (1) are interposed therebetween, and surround these internal electrodes (5). Form between multilayer ceramic substrate (1) and cap (2) Layered ceramic package metallic sealing section for sealing the spaces (4), characterized in that the interposed. 前記複数の内部電極(5)は、前記封止部(4)を形成する封止用金属と同一の金属から形成されている請求項1に記載の積層セラミックパッケージ。   2. The multilayer ceramic package according to claim 1, wherein the plurality of internal electrodes are made of the same metal as a sealing metal forming the sealing portion. 表面にキャビティ(10)が凹設された積層セラミック基板(1)と、該積層セラミック基板(1)のキャビティ(10)を覆って積層セラミック基板(1)の表面に接合されたキャップ(2)と、積層セラミック基板(1)のキャビティ(10)に収容された電子デバイス(3)とから構成され、積層セラミック基板(1)の裏面には、前記電子デバイス(3)と導電経路を経て繋がる複数の外部電極(7)が形成されている積層セラミックパッケージの製造方法において、
内面に電子デバイス(3)を具えたキャップ(2)を作製すると共に、表面にキャビティ(10)が凹設されると共に裏面に複数の外部電極(7)が形成された積層セラミック基板(1)を作製する第1工程と、
積層セラミック基板(1)とキャップ(2)を接合して一体化することにより、キャップ(2)の電子デバイス(3)を積層セラミック基板(1)の複数の外部電極(7)に電気接続する第2工程
とを有し、前記第1工程では、積層セラミック基板(1)の表面に、キャップ(2)の内面に形成されている複数の電極パッドと対応させて、前記複数の外部電極(7)と導電経路を介して繋がる複数の接続金属パッド(68)を形成し、前記第2工程では、積層セラミック基板(1)の各接続金属パッド(68)とキャップ(2)の各電極パッドとを互いに接合させると共に、積層セラミック基板(1)とキャップ(2)の対向面間に、前記複数の接続金属パッド(68)を包囲する封止金属枠部を介在させた状態で、前記接続金属パッド(68)と封止金属枠部を一旦溶融させた後に固化させる処理を施すことを特徴とする積層セラミックパッケージの製造方法。
A multilayer ceramic substrate (1) having a cavity (10) recessed on the surface, and a cap (2) covering the cavity (10) of the multilayer ceramic substrate (1) and bonded to the surface of the multilayer ceramic substrate (1) And an electronic device (3) accommodated in the cavity (10) of the multilayer ceramic substrate (1), and the back surface of the multilayer ceramic substrate (1) is connected to the electronic device (3) via a conductive path. In the method of manufacturing a multilayer ceramic package in which a plurality of external electrodes (7) are formed,
A multilayer ceramic substrate (1) having a cap (2) having an electronic device (3) on the inner surface, a cavity (10) recessed in the front surface, and a plurality of external electrodes (7) formed on the rear surface A first step of producing
By joining and integrating the multilayer ceramic substrate (1) and the cap (2), the electronic device (3) of the cap (2) is electrically connected to the plurality of external electrodes (7) of the multilayer ceramic substrate (1). A second step, and in the first step, the surface of the multilayer ceramic substrate (1) is made to correspond to the plurality of electrode pads formed on the inner surface of the cap (2), and the plurality of external electrodes ( 7) A plurality of connection metal pads (68) connected to the conductive path via the conductive path are formed. In the second step, each connection metal pad (68) of the multilayer ceramic substrate (1) and each electrode pad of the cap (2) are formed. And the sealing metal frame portion surrounding the plurality of connection metal pads (68) between the opposing surfaces of the multilayer ceramic substrate (1) and the cap (2), and the connection. The metal pad (68) and the sealing metal frame are melted once and then solidified. Method of manufacturing a multilayer ceramic package, characterized in that.
前記第1工程では、積層セラミック基板(1)の表面に、前記複数の接続金属パッド(68)を包囲する枠状の封止金属枠(8)を設置し、該封止金属枠(8)を前記接続金属パッド(68)と同時に溶融固化させて、前記封止金属枠部を形成する請求項3に記載の積層セラミックパッケージの製造方法。   In the first step, a frame-shaped sealing metal frame (8) surrounding the plurality of connection metal pads (68) is installed on the surface of the multilayer ceramic substrate (1), and the sealing metal frame (8) The method of manufacturing a multilayer ceramic package according to claim 3, wherein the sealing metal frame portion is formed by melting and solidifying at the same time as the connection metal pad (68). 積層セラミック基板(1)の表面に前記複数の接続金属パッド(68)を形成する工程は、積層セラミック基板(1)を表面から裏面まで貫通して導電経路を構成する複数の導体充填部(6)を形成する工程と、該積層セラミック基板(1)の表面に、前記複数の導体充填部(6)の基板表面側の露出面に対応する複数の丸孔(91)を有する平板状の治具(9)を設置すると共に、該治具(9)の複数の丸孔(91)にそれぞれ接続金属ボール(60)を収容し、該接続金属ボール(60)を溶融させた後、治具(9)を除去する請求項3又は請求項4に記載の積層セラミックパッケージの製造方法。   The step of forming the plurality of connection metal pads (68) on the surface of the multilayer ceramic substrate (1) includes a plurality of conductor filling portions (6 And a flat plate-like jig having a plurality of round holes (91) corresponding to the exposed surface of the plurality of conductor filling portions (6) on the surface of the multilayer ceramic substrate (1). The fixture (9) is installed, and the connecting metal balls (60) are respectively accommodated in the plurality of round holes (91) of the jig (9), and the connecting metal balls (60) are melted. The method for producing a multilayer ceramic package according to claim 3 or 4, wherein (9) is removed. 積層セラミック基板(1)の表面に前記複数の接続金属パッド(68)を形成する工程は、積層セラミック基板(1)を表面から裏面まで貫通する導電経路の内、基板裏面側の経路を構成する複数の円柱状の導体充填部(6)と、該導体充填部(6)から基板表面に至る経路を構成する複数の円筒状の導体内周壁(69)とを形成する工程と、該積層セラミック基板(1)の複数の導電内周壁(69)の開口部にそれぞれ接続金属ボール(60)を収容し、該接続金属ボール(60)を溶融させる請求項3又は請求項4に記載の積層セラミックパッケージの製造方法。   The step of forming the plurality of connection metal pads (68) on the surface of the multilayer ceramic substrate (1) constitutes a path on the back side of the substrate among conductive paths penetrating the multilayer ceramic substrate (1) from the surface to the back surface. Forming a plurality of cylindrical conductor filling portions (6), and a plurality of cylindrical conductor inner peripheral walls (69) constituting paths from the conductor filling portions (6) to the substrate surface; The laminated ceramic according to claim 3 or 4, wherein the connection metal balls (60) are respectively accommodated in the openings of the plurality of conductive inner peripheral walls (69) of the substrate (1), and the connection metal balls (60) are melted. Package manufacturing method.
JP2007047737A 2007-02-27 2007-02-27 Laminated ceramic package and its manufacturing method Pending JP2008211062A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113624394A (en) * 2020-05-08 2021-11-09 精量电子(深圳)有限公司 Pressure sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113624394A (en) * 2020-05-08 2021-11-09 精量电子(深圳)有限公司 Pressure sensor

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