JP2008203278A - Method for manufacturing acceleration sensor - Google Patents

Method for manufacturing acceleration sensor Download PDF

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JP2008203278A
JP2008203278A JP2008144782A JP2008144782A JP2008203278A JP 2008203278 A JP2008203278 A JP 2008203278A JP 2008144782 A JP2008144782 A JP 2008144782A JP 2008144782 A JP2008144782 A JP 2008144782A JP 2008203278 A JP2008203278 A JP 2008203278A
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weight body
main surface
auxiliary
stopper
layer
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JP5046240B2 (en
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Muneo Harada
宗生 原田
Naoki Ikeuchi
直樹 池内
Hiroyuki Hashimoto
浩幸 橋本
Kazuhiro Okada
和廣 岡田
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Tokyo Electron Ltd
Wacoh Corp
Wako KK
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Tokyo Electron Ltd
Wacoh Corp
Wako KK
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an acceleration sensor, in which detection sensitivity can be improved more than in a conventional acceleration sensor by extending beam length while ensuring an increased weight, and miniaturization can be performed with satisfactory frequency characteristic and impact resistance. <P>SOLUTION: A sensor part 1 composed of a microstructure includes a rectangular frame part 11, and a cylindrical weight 12 provided at a central portion of the frame part 11. The weight 12 is connected to a middle portion of each side of the frame part 11 through each beam 13. Square pole-like auxiliary weights 14, 14, 14, and 14 are provided continuously to the weight 12 so as to be freely inserted into a space surrounded by the beams 13 and 13 and the inside surface of the frame part 11. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、加速度センサ、特にピエゾ抵抗効果を示す抵抗素子を用いて、二次元又は三次元方向の加速度を検出する加速度センサの製造方法に関する。   The present invention relates to an acceleration sensor, and more particularly to a method of manufacturing an acceleration sensor that detects acceleration in a two-dimensional or three-dimensional direction using a resistance element that exhibits a piezoresistance effect.

図5は、従来のピエゾ抵抗検出型の加速度センサを示す斜視図であり、図中3はマイクロ構造体である(例えば特許文献1参照)。マイクロ構造体とは、微細加工プロセスにより製造される半導体基板又はマイクロマシン等をいう。   FIG. 5 is a perspective view showing a conventional piezoresistive detection type acceleration sensor, in which 3 is a microstructure (see, for example, Patent Document 1). The micro structure refers to a semiconductor substrate or a micromachine manufactured by a microfabrication process.

マイクロ構造体3は、矩形の枠部31を有し、枠部31の中心部には円柱状の重錘体32が設けられている。この重錘体32は枠部31の各辺の中央部と、ビーム33,33,33,33により接続されている。一直線状をなすビーム33,33には、X軸方向の加速度成分を検出するための抵抗素子Rx1〜Rx4が、これと直交するビーム33,33には、Y軸方向の加速度成分を検出するための抵抗素子Ry1〜Ry4が、さらに、X軸と平行で、その近傍にある軸上にZ軸方向の加速度成分を検出するための抵抗素子Rz1〜Rz4が配されている。   The microstructure 3 has a rectangular frame portion 31, and a columnar weight body 32 is provided at the center of the frame portion 31. The weight body 32 is connected to the central portion of each side of the frame portion 31 by beams 33, 33, 33, 33. The linear beams 33 and 33 have resistance elements Rx1 to Rx4 for detecting acceleration components in the X-axis direction, and the beams 33 and 33 orthogonal to the beams 33 and 33 detect acceleration components in the Y-axis direction. The resistance elements Ry1 to Ry4 are further arranged on the axis parallel to the X axis and for detecting an acceleration component in the Z-axis direction.

図6及び図7は、加速度センサ内の抵抗素子によって形成されるブリッジ回路を示す回路図であり、図6はRx1〜Rx4及びRy1〜Ry4についての回路図、図7はRz1〜Rz4についての回路図である。加速度が加わった場合、加速度に起因して重錘体32に外力が作用し、重錘体32は定位置から変位し、この変位によって生じた機械的歪みはビーム33,33,33,33の機械的変形によって吸収され、この上に形成された抵抗素子Rの電気抵抗が変化する。その結果、図6に示すブリッジ回路の平衡がくずれて電圧Voutが検出される。ここで、X(Y)軸方向の加速度に対して重錘体32はモーメントを受け、X(Y)軸方向についてのピエゾ抵抗変化分は加算されて出力されるが、Z軸方向については、変化分が相殺されて出力されない。一方、Z軸方向の加速度に対して重錘体32は垂直方向に変位し、ピエゾ抵抗変化分は、Z軸方向については加算されて出力され、X(Y)軸方向については相殺されて出力されない。
特開平11−214705号公報
6 and 7 are circuit diagrams showing a bridge circuit formed by resistance elements in the acceleration sensor. FIG. 6 is a circuit diagram for Rx1 to Rx4 and Ry1 to Ry4. FIG. 7 is a circuit for Rz1 to Rz4. FIG. When acceleration is applied, an external force acts on the weight body 32 due to the acceleration, the weight body 32 is displaced from a fixed position, and mechanical distortion caused by this displacement is caused by the beams 33, 33, 33, 33. Absorbed by mechanical deformation, the electric resistance of the resistance element R formed thereon changes. As a result, the balance of the bridge circuit shown in FIG. 6 is lost and the voltage Vout is detected. Here, the weight body 32 receives a moment with respect to the acceleration in the X (Y) axis direction, and the piezoresistance change in the X (Y) axis direction is added and output, but in the Z axis direction, The change is offset and not output. On the other hand, the weight body 32 is displaced in the vertical direction with respect to the acceleration in the Z-axis direction, and the piezoresistance change is added and output in the Z-axis direction and is canceled and output in the X (Y) -axis direction. Not.
Japanese Patent Laid-Open No. 11-214705

上述した図5のピエゾ抵抗検出型の加速度センサの場合、慣性力を増加させるために重錘体32を大きくすると、ビーム33が短くなり、ビーム33の歪みが相対的に小さくなって、ピエゾ抵抗による検出感度が相対的に小さくなるという問題があった。このことは、加速度センサを小型化する障害となっていた。   In the case of the piezoresistive detection type acceleration sensor of FIG. 5 described above, if the weight body 32 is enlarged in order to increase the inertial force, the beam 33 is shortened, and the distortion of the beam 33 is relatively reduced. There has been a problem that the detection sensitivity due to becomes relatively small. This has been an obstacle to downsizing the acceleration sensor.

本発明は斯かる事情に鑑みてなされたものであり、補助重錘体を有することにより、重錘体と併せた重量を大きくすることができるとともに、ビームの長さを長くして検出感度を従来の加速度センサより向上させることができ、周波数特性及び耐衝撃性が良好であり、小型化が可能である加速度センサの製造方法を提供することを目的とする。   The present invention has been made in view of such circumstances. By having an auxiliary weight body, the weight combined with the weight body can be increased, and the detection sensitivity can be increased by increasing the length of the beam. An object of the present invention is to provide a method of manufacturing an acceleration sensor that can be improved over conventional acceleration sensors, has good frequency characteristics and shock resistance, and can be miniaturized.

また、本発明は、補助重錘体と枠部の内周面との間隔、及び補助重錘体とビームとの間隔を略同じにすることにより、X軸及びY軸方向において精度よく加速度を検出することができるとともに、補助重錘体の大きさを効果的に大きくすることができる加速度センサの製造方法を提供することを目的とする。   In the present invention, the acceleration between the auxiliary weight body and the inner peripheral surface of the frame portion and the distance between the auxiliary weight body and the beam are made substantially the same so that acceleration can be accurately performed in the X-axis and Y-axis directions. An object of the present invention is to provide a method of manufacturing an acceleration sensor that can detect and effectively increase the size of an auxiliary weight body.

そして、本発明は、ビームを、重錘体と枠部の各辺の略中央部とをそれぞれ接続すべく構成し、補助重錘体を四角柱状にすることにより、さらにX軸及びY軸方向において精度よく加速度を検出することができ、重量を大きくすることができる加速度センサの製造方法を提供することを目的とする。   In the present invention, the beam is configured so as to connect the weight body and the substantially central portion of each side of the frame portion, and the auxiliary weight body is formed in a quadrangular prism shape, thereby further in the X-axis and Y-axis directions. It is an object of the present invention to provide a method of manufacturing an acceleration sensor that can accurately detect acceleration and increase the weight.

さらに、本発明は、枠部の角部にビーム幅より長い斜辺と角部を挟む二辺とからなる三角部を設け、三角部の斜辺の略中央部においてビームを接続し、補助重錘体を三角柱状にすることにより、ビーム長を長くとることができ、検出感度が向上し、応力集中が生じず、耐久性が向上するとともに、ピエゾ抵抗のビーム幅方向にかかる歪みが均一となり、感度特性が向上する加速度センサの製造方法を提供することを目的とする。   Further, the present invention provides an auxiliary weight body in which a triangular portion comprising an oblique side longer than the beam width and two sides sandwiching the corner portion is provided at the corner portion of the frame portion, and the beam is connected at substantially the central portion of the oblique portion of the triangular portion. By using a triangular prism shape, the beam length can be increased, detection sensitivity is improved, stress concentration does not occur, durability is improved, and distortion in the beam width direction of the piezoresistor becomes uniform, resulting in sensitivity. It is an object of the present invention to provide a method for manufacturing an acceleration sensor with improved characteristics.

本発明の加速度センサの製造方法は、断面視で矩形状をなす枠状のストッパ、前記ストッパの略中心部に設けられた重錘体、前記重錘体と前記ストッパとを接続するものであり、交叉する二直線状をなす4本のビーム、及び前記ビームのうちの2本と前記ストッパの内周面とにより包囲される空間内に遊挿する状態で前記重錘体に連設されており、側面が略垂直柱状をなす4つの補助重錘体を有するマイクロ構造体の加速度の作用に基づく機械的変形を、前記マイクロ構造体に形成した抵抗素子の電気抵抗の変化により検出して、加速度の向き及び大きさを検出すべくなしてある加速度センサの製造方法であって、第1層乃至第3層を有するSOI基板を、前記ストッパ表面を含む第1主面に対して前記マイクロ構造体中心の垂直上方から見たときに、前記4本のビームのそれぞれの長さが同じであり、前記マイクロ構造体の第1主面中心を軸として90度回転させたときの前記垂直上方から見た前記ストッパ、前記重錘体、前記補助重錘体及び前記4本のビームの写像が、元の写像と同じになり、さらに第1主面がパッケージと相対する際に、前記パッケージに対して前記重錘体及び前記補助重錘体の第1主面部分が、僅かに離間して保持されるよう第1層から第2層まで反応性イオンエッチングして前記重錘体、前記ビーム、及び、前記補助重錘体を形成し、前記抵抗素子を、前記ビーム上に形成し、前記基板を、前記マイクロ構造体の第1主面の反対側の主面を第2主面としたとき、第1主面と第2主面とは、前記マイクロ構造体中心の垂直上方から見たときに、前記重錘体、前記補助重錘体、及び前記ストッパにおける平面視が略同じであり、さらに、前記重錘体及び前記補助重錘体が同一の厚みを有し、かつ前記ストッパと略同じ厚みであり、第2主面がパッケージと相対する際に、前記パッケージに対して前記重錘体及び前記補助重錘体の第2主面部分が、僅かに離間して保持され、前記補助重錘体が揺動した場合に、該補助重錘体が前記ストッパに抑止されるよう第3層から第2層まで反応性イオンエッチングして前記重錘体、及び、前記補助重錘体を形成し、前記第2層をエッチングして前記重錘体、前記ビーム、及び、前記補助重錘体をリリースすることを特徴とする。   The acceleration sensor manufacturing method of the present invention includes a frame-shaped stopper having a rectangular shape in a cross-sectional view, a weight body provided substantially at the center of the stopper, and the weight body and the stopper are connected to each other. Four beams crossing two straight lines, and connected to the weight body in a state of loose insertion in a space surrounded by two of the beams and the inner peripheral surface of the stopper. And detecting mechanical deformation based on the action of acceleration of the microstructure having four auxiliary weights whose side surfaces are substantially vertical columnar shapes, by detecting a change in electric resistance of a resistance element formed in the microstructure, An acceleration sensor manufacturing method for detecting a direction and a magnitude of acceleration, wherein an SOI substrate having a first layer to a third layer is arranged on the first main surface including the stopper surface with respect to the first main surface. Viewed from vertically above the center of the body Sometimes, the lengths of the four beams are the same, and the stopper and the weight as viewed from above vertically when rotated by 90 degrees about the first main surface center of the microstructure The body, the auxiliary weight body, and the four beams have the same mapping as the original mapping, and the weight body and the auxiliary body with respect to the package when the first main surface faces the package. Reactive ion etching is performed from the first layer to the second layer so that the first main surface portion of the weight body is held slightly apart so that the weight body, the beam, and the auxiliary weight body are Forming the resistance element on the beam; and setting the substrate to a second main surface opposite to the first main surface of the microstructure, the first main surface and the second main surface. The main surface refers to the weight body when viewed from vertically above the center of the microstructure. The plan view of the auxiliary weight body and the stopper is substantially the same, and the weight body and the auxiliary weight body have the same thickness and the same thickness as the stopper. When the main surface faces the package, the second main surface portion of the weight body and the auxiliary weight body is held slightly separated from the package, and the auxiliary weight body swings. In this case, reactive ion etching is performed from the third layer to the second layer so that the auxiliary weight body is restrained by the stopper to form the weight body and the auxiliary weight body, and the second layer The weight body, the beam, and the auxiliary weight body are released by etching.

本発明においては、補助重錘体を有しており、重錘体と併せた重量を大きくすることができるので、加速度の検出感度が従来の加速度センサより向上する。そして、補助重錘体との合計重量を大きくすることで重錘体を小さくすることができ、その結果、ビームの長さを長くしてピエゾ抵抗による検出感度を向上させることができる。従って、加速度センサを小型化することが可能になる。また、補助重錘体はダンピング機能を有するので、周波数特性を改善することもできる。さらに、補助重錘体は変位しても枠部がストッパとして機能するので、耐衝撃性が良好である。そして、後述するRIEによるエッチングにより、重錘体、補助重錘体及び枠部の内周面は略垂直な側面を得ることができるので、効果的に重量を大きくすることができる。これによりマイクロ構造体の重錘体及び補助重錘体の第1主面及び第2主面の平面視は略同じになる。加えて、重錘体、補助重錘体は枠部と略同じ厚みであるが、パッケージとの間に隙間を設けるべくなしてあるので、パッケージによって性能が悪くなることもない。   In the present invention, since the auxiliary weight body is provided and the weight combined with the weight body can be increased, the acceleration detection sensitivity is improved as compared with the conventional acceleration sensor. Then, the weight body can be reduced by increasing the total weight with the auxiliary weight body, and as a result, the length of the beam can be increased and the detection sensitivity by piezoresistance can be improved. Therefore, it is possible to reduce the size of the acceleration sensor. Further, since the auxiliary weight body has a damping function, the frequency characteristics can be improved. Furthermore, even if the auxiliary weight body is displaced, the frame portion functions as a stopper, so that the impact resistance is good. Since the inner circumferential surfaces of the weight body, the auxiliary weight body, and the frame portion can be obtained by etching by RIE described later, the weight can be effectively increased. Thereby, the planar view of the first principal surface and the second principal surface of the weight body of the microstructure and the auxiliary weight body is substantially the same. In addition, although the weight body and the auxiliary weight body have substantially the same thickness as the frame portion, a gap is provided between the weight body and the auxiliary weight body, so that the performance is not deteriorated by the package.

本発明においては、補助重錘体を有しており、重錘体と併せた重量を大きくすることができるので、加速度の検出感度が従来の加速度センサより向上する。そして、補助重錘体との合計重量を大きくすることで重錘体の大きさを小さくすることができ、その結果、ビームの長さを長くしてピエゾ抵抗による検出感度を向上させることができる。従って、加速度センサを小型化することが可能になる。また、補助重錘体はダンピング機能を有するので、周波数特性を改善させることもできる。さらに、補助重錘体は変位しても枠部がストッパとして機能するので、耐衝撃性が良好である。   In the present invention, since the auxiliary weight body is provided and the weight combined with the weight body can be increased, the acceleration detection sensitivity is improved as compared with the conventional acceleration sensor. And the size of the weight body can be reduced by increasing the total weight with the auxiliary weight body, and as a result, the length of the beam can be increased and the detection sensitivity by piezoresistance can be improved. . Therefore, it is possible to reduce the size of the acceleration sensor. Further, since the auxiliary weight body has a damping function, the frequency characteristics can be improved. Furthermore, even if the auxiliary weight body is displaced, the frame portion functions as a stopper, so that the impact resistance is good.

また、本発明においては、補助重錘体と枠部の内周面との間隔、及び補助重錘体とビームとの間隔を略同じに構成するので、X軸及びY軸方向において精度よく加速度を検出することができるとともに、スペースを有効利用して補助重錘体の大きさを効果的に大きくすることができる。その結果、製造歩留が向上し、製造原価を低減させることができる。   In the present invention, the distance between the auxiliary weight body and the inner peripheral surface of the frame portion and the distance between the auxiliary weight body and the beam are configured to be substantially the same, so that the acceleration can be accurately performed in the X-axis and Y-axis directions. Can be detected, and the size of the auxiliary weight body can be effectively increased by effectively utilizing the space. As a result, the manufacturing yield can be improved and the manufacturing cost can be reduced.

さらに、本発明においては、補助重錘体がX軸及びY軸と平行に配置されており、X軸及びY軸方向においてさらに精度よく加速度を検出することができ、補助重錘体が四角柱状をなすので、その重量を大きくすることができる。   Furthermore, in the present invention, the auxiliary weight body is disposed in parallel with the X axis and the Y axis, and the acceleration can be detected with higher accuracy in the X axis and Y axis directions. The weight can be increased.

以下、本発明をその実施の形態を示す図面に基づいて具体的に説明する。図1は、本発明の実施の形態1に係るピエゾ抵抗検出型の加速度センサのセンサ部を表面(第1主面)側から見た斜視図であり、図2は裏面(第2主面)側から見た斜視図であり、図中、1はマイクロ構造体としてのSOI(Silicon On Insulator)基板からなるセンサ部である。   Hereinafter, the present invention will be specifically described with reference to the drawings showing embodiments thereof. 1 is a perspective view of a sensor portion of a piezoresistive detection type acceleration sensor according to Embodiment 1 of the present invention as viewed from the front surface (first main surface) side, and FIG. 2 is a back surface (second main surface). FIG. 1 is a perspective view seen from the side. In the figure, reference numeral 1 denotes a sensor unit comprising an SOI (Silicon On Insulator) substrate as a microstructure.

センサ部1は、矩形の枠部11を有し、枠部11の中心部には円柱状の重錘体12が設けられている。この重錘体12は枠部11の各辺の中央部と、ビーム13,13,13,13とにより接続されている。一直線状をなすビーム13,13には、X軸方向の加速度成分を検出するための抵抗素子Rx1〜Rx4が、これと直交するビーム13,13には、Y軸方向の加速度成分を検出するための抵抗素子Ry1〜Ry4が、X軸と平行で、その近傍にある軸上にZ軸方向の加速度成分を検出するための抵抗素子Rz1〜Rz4が配されている。そして、四角柱状の補助重錘体14,14,14,14が、ビーム13,13と枠部11の内周面とにより包囲される空間内に遊挿する状態で、重錘体12に連設してある。   The sensor unit 1 has a rectangular frame part 11, and a columnar weight body 12 is provided at the center part of the frame part 11. The weight body 12 is connected to the central portion of each side of the frame portion 11 by beams 13, 13, 13, and 13. The linear beams 13 and 13 have resistance elements Rx1 to Rx4 for detecting acceleration components in the X-axis direction, and the beams 13 and 13 orthogonal to the beams 13 and 13 detect acceleration components in the Y-axis direction. The resistance elements Ry1 to Ry4 are parallel to the X axis, and the resistance elements Rz1 to Rz4 for detecting the acceleration component in the Z-axis direction are arranged on an axis in the vicinity thereof. The square columnar auxiliary weight bodies 14, 14, 14, 14 are connected to the weight body 12 while being loosely inserted into the space surrounded by the beams 13, 13 and the inner peripheral surface of the frame portion 11. It is set up.

センサ部1の寸法は、縦及び横の長さがそれぞれ2.5mm、厚みが566μmであり、枠部11の幅が500μmである。そして、重錘体12の直径が400μm、ビーム13の長さが550μm、幅が70μm、補助重錘体14の縦及び横の長さが615μm、補助重錘体14と、ビーム13及び枠部11の内周面との間隔が夫々50μmである。   The sensor part 1 has dimensions of 2.5 mm in length and width, a thickness of 566 μm, and a width of the frame part 11 of 500 μm. The diameter of the weight body 12 is 400 μm, the length of the beam 13 is 550 μm, the width is 70 μm, the vertical and horizontal lengths of the auxiliary weight body 14 are 615 μm, the auxiliary weight body 14, the beam 13, and the frame portion The distance between the inner peripheral surface 11 and the inner peripheral surface 11 is 50 μm.

加速度センサ内の抵抗素子によって形成されるブリッジ回路は上述した図5及び図6と同一であり、Rx1〜Rx4及びRy1〜Ry4についての回路図は図5と同一、Rz1〜Rz4についての回路図は図6と同一である。加速度が加わった場合、加速度に起因して重錘体12及び補助重錘体14に外力が作用し、重錘体12及び補助重錘体14は定位置から変位し、この変位によって生じた機械的歪みがビーム13,13,13,13の機械的変形によって吸収され、この上に形成された抵抗素子Rの電気抵抗が変化する。その結果、図5及び図6に示すブリッジ回路の平衡がくずれて電圧Voutが検出される。ここで、X(Y)軸方向の加速度に対して重錘体12及び補助重錘体14はモーメントを受け、X(Y)軸のピエゾ抵抗変化分は加算されて出力されるが、Z軸方向については、変化分が相殺されて出力されない。一方、Z軸方向の加速度に対しては重錘体12及び補助重錘体14は垂直方向に変化し、このためピエゾ抵抗変化分は、Z軸方向については加算されて出力され、X(Y)軸方向については、相殺されて出力されない。   The bridge circuit formed by the resistance element in the acceleration sensor is the same as that in FIG. 5 and FIG. 6 described above, the circuit diagram for Rx1 to Rx4 and Ry1 to Ry4 is the same as FIG. 5, and the circuit diagram for Rz1 to Rz4 is It is the same as FIG. When acceleration is applied, an external force acts on the weight body 12 and the auxiliary weight body 14 due to the acceleration, and the weight body 12 and the auxiliary weight body 14 are displaced from the fixed positions, and the machine generated by this displacement. The mechanical distortion is absorbed by the mechanical deformation of the beams 13, 13, 13, and 13, and the electric resistance of the resistance element R formed thereon is changed. As a result, the balance of the bridge circuit shown in FIGS. 5 and 6 is lost, and the voltage Vout is detected. Here, the weight body 12 and the auxiliary weight body 14 receive a moment with respect to the acceleration in the X (Y) axis direction, and the piezoresistance change of the X (Y) axis is added and output. As for the direction, the change is canceled and not output. On the other hand, the weight body 12 and the auxiliary weight body 14 change in the vertical direction with respect to the acceleration in the Z-axis direction. Therefore, the piezoresistance change is added and output in the Z-axis direction, and X (Y ) The axial direction is canceled and not output.

次に、センサ部1の製造方法について説明する。図3は、センサ部1を構成するSOI基板を示す断面図である。このSOI基板は、厚み560μmのSi層15、埋め込み酸化膜としての厚み1μmのSiO2 層16、及び厚み5μmのSi層15の三層からなる。まず、後ほど形成される一直線上のビーム13,13に対応する所定位置にX軸方向の加速度成分を検出するための抵抗素子Rx1〜Rx4を形成し、これと直交するビーム13,13に対応する所定位置に、Y軸方向の加速度成分を検出するための抵抗素子Ry1〜Ry4を、X軸と平行で、その近傍にある軸上にZ軸方向の加速度成分を検出するための抵抗素子Rz1〜Rz4を形成する。次に、SOI基板の表面からSiO2 層16までSiディープRIE(反応性イオンエッチング)によりエッチングを行い、重錘体12、ビーム13,13,13,13、及び補助重錘体14,14,14,14を形成する。そして、裏面からSiO2 層16までSiディープRIEにより深堀りエッチングを行い、重錘体12及び補助重錘体14,14,14,14を形成する。最後に、SiO2 層16をエッチングすることにより重錘体12、ビーム13,13,13,13、及び補助重錘体14,14,14,14をリリースして、可動構造とする。 Next, a method for manufacturing the sensor unit 1 will be described. FIG. 3 is a cross-sectional view showing an SOI substrate constituting the sensor unit 1. This SOI substrate is composed of three layers: a Si layer 15 having a thickness of 560 μm, a SiO 2 layer 16 having a thickness of 1 μm as a buried oxide film, and a Si layer 15 having a thickness of 5 μm. First, resistance elements Rx1 to Rx4 for detecting acceleration components in the X-axis direction are formed at predetermined positions corresponding to the straight beams 13 and 13 formed later, and correspond to the beams 13 and 13 orthogonal thereto. Resistive elements Ry1 to Ry4 for detecting the acceleration component in the Y-axis direction at predetermined positions, and resistive elements Rz1 to Rz1 for detecting the acceleration component in the Z-axis direction on an axis parallel to the X axis and in the vicinity thereof. Rz4 is formed. Next, etching is performed from the surface of the SOI substrate to the SiO 2 layer 16 by Si deep RIE (reactive ion etching), the weight body 12, the beams 13, 13, 13, 13, and the auxiliary weight bodies 14, 14, 14 and 14 are formed. Then, deep etching is performed by Si deep RIE from the back surface to the SiO 2 layer 16 to form the weight body 12 and the auxiliary weight bodies 14, 14, 14, 14. Finally, the weight body 12, the beams 13, 13, 13, and 13 and the auxiliary weight bodies 14, 14, 14, and 14 are released by etching the SiO 2 layer 16 to form a movable structure.

以上のように構成された本発明の実施の形態に係る加速度センサは、補助重錘体14を有しており、重錘体12と併せた重量を大きくすることができるので、加速度の検出感度が従来の加速度センサと比較して向上する。そして、補助重錘体14との合計重量を重くすることで重錘体12の大きさを小さくすることができ、その結果、ビーム13の長さを長くしてピエゾ抵抗による検出感度を向上させることができる。従って、加速度センサの小型化が可能になる。従来の加速度センサは、センサ部としてのチップのサイズが5.0×5.0(mm)、外形寸法が14.0×11.4×5.5(mm)であったのに対し、本発明の加速度センサはチップのサイズが2.5×2.5(mm)、外形寸法が5.0×5.0×5.0(mm)と小型化されている。   The acceleration sensor according to the embodiment of the present invention configured as described above includes the auxiliary weight body 14 and can increase the weight in combination with the weight body 12, so that the acceleration detection sensitivity can be increased. Is improved as compared with the conventional acceleration sensor. The weight of the weight body 12 can be reduced by increasing the total weight with the auxiliary weight body 14, and as a result, the length of the beam 13 is increased and the detection sensitivity due to piezoresistance is improved. be able to. Therefore, the acceleration sensor can be downsized. The conventional acceleration sensor has a chip size of 5.0 × 5.0 (mm) and an outer dimension of 14.0 × 11.4 × 5.5 (mm) as a sensor unit. The acceleration sensor of the present invention is miniaturized with a chip size of 2.5 × 2.5 (mm) and an outer dimension of 5.0 × 5.0 × 5.0 (mm).

また、補助重錘体14はダンピング機能を有するので、周波数特性を改善することもできる。さらに、補助重錘体14は枠部11と接近しており、大きく変位しても枠部11の内周面で止まるので、耐衝撃性が良好である。そして、製造の歩留も向上し、製造原価が大幅に低減したのが確認されている。   In addition, since the auxiliary weight body 14 has a damping function, the frequency characteristics can be improved. Furthermore, since the auxiliary weight body 14 is close to the frame portion 11 and stops at the inner peripheral surface of the frame portion 11 even if it is largely displaced, the impact resistance is good. And it was confirmed that the manufacturing yield was improved and the manufacturing cost was greatly reduced.

なお、前記実施の形態においては、4本のビーム13が重錘体12と枠部11の各辺の中央部とを接続すべくなしてあり、重錘体12が円柱状をなし、補助重錘体14が四角柱状をなす場合につき説明しているがこれに限定されるものではない。4本のビーム13は重錘体12と枠部11とを対角線状に接続すべく構成してもよく、重錘体12及び補助重錘体14の形状も円柱、底面が楕円形である柱状体、三角柱及び四角柱等の多角柱等、種々の形状から選択することができる。   In the above-described embodiment, the four beams 13 connect the weight body 12 and the central portion of each side of the frame portion 11, and the weight body 12 has a columnar shape and has an auxiliary weight. Although the case where the weight body 14 has a quadrangular prism shape has been described, the present invention is not limited to this. The four beams 13 may be configured to connect the weight body 12 and the frame portion 11 diagonally. The shape of the weight body 12 and the auxiliary weight body 14 is also a cylinder, and the bottom is an ellipse. It can be selected from various shapes such as a body, a triangular prism, and a polygonal prism such as a quadrangular prism.

図4は、その一例としての4本のビームを対角線状に配置した本発明の加速度センサ部を示す平面図である。図中、図1と同一部分は同一符号で示してある。この加速度センサにおいては、枠部11の内周面の各角部にビーム13の幅より長い斜辺と角部を挟む二辺とからなる三角部17,17,17,17が設けられており、この三角部17の斜辺の中央部と四角柱状の重錘体12とがビーム13により接続されている。三角部17により、枠部11は八角形状をなす。この加速度センサにおいては、ビーム長を長くすることができ、よりX軸及びY軸方向において精度よく加速度を検出することができ、補助重錘体14の重量を大きくすることができる。また、前記三角部17を介しており、ビーム13の側面と枠部11の内周面とが鋭角をなさず、応力集中がなくなるので、耐久性が向上するとともに、抵抗素子のビーム13の幅方向の歪みの分布が一様となるので、感度特性がより向上する。   FIG. 4 is a plan view showing an acceleration sensor unit of the present invention in which four beams as an example are arranged diagonally. In the figure, the same parts as those in FIG. 1 are denoted by the same reference numerals. In this acceleration sensor, triangular portions 17, 17, 17, 17 each having an oblique side longer than the width of the beam 13 and two sides sandwiching the corner portion are provided at each corner portion of the inner peripheral surface of the frame portion 11. A central portion of the hypotenuse of the triangular portion 17 and the quadrangular columnar weight body 12 are connected by a beam 13. Due to the triangular portion 17, the frame portion 11 forms an octagonal shape. In this acceleration sensor, the beam length can be increased, acceleration can be detected more accurately in the X-axis and Y-axis directions, and the weight of the auxiliary weight body 14 can be increased. In addition, since the side surface of the beam 13 and the inner peripheral surface of the frame portion 11 do not form an acute angle through the triangular portion 17 and stress concentration is eliminated, the durability is improved and the width of the beam 13 of the resistance element is increased. Since the directional strain distribution is uniform, the sensitivity characteristic is further improved.

また、前記実施の形態においては、補助重錘体14と枠部11の内周面との間隔、及び補助重錘体14とビーム13,13との間隔を略同じにした場合につき説明しているがこれに限定されない。但し、前記間隔を略同じにした方がX軸及びY軸方向において精度よく加速度を検出することができ、スペースを有効利用して補助重錘体14の大きさを効果的に大きくすることができる。   In the above embodiment, the case where the distance between the auxiliary weight body 14 and the inner peripheral surface of the frame portion 11 and the distance between the auxiliary weight body 14 and the beams 13 and 13 are substantially the same will be described. However, it is not limited to this. However, if the distance is substantially the same, the acceleration can be detected with high accuracy in the X-axis and Y-axis directions, and the size of the auxiliary weight body 14 can be effectively increased by effectively using the space. it can.

前記実施の形態においては、補助重錘体14又は24を4つ備えた場合につき説明しているがこれに限定されるものではなく、補助重錘体14又は24を少なくとも1つ備えればよい。但し、補助重錘体14は少なくとも2つを対称に配置した方がバランスが良く、検出感度がより良好である。   In the above-described embodiment, the case where four auxiliary weight bodies 14 or 24 are provided has been described. However, the present invention is not limited to this, and it is sufficient that at least one auxiliary weight body 14 or 24 is provided. . However, it is better to arrange the auxiliary weight bodies 14 symmetrically, and the balance is better and the detection sensitivity is better.

本発明の実施の形態に係るピエゾ抵抗検出型の加速度センサのセンサ部を表面側から見た斜視図である。It is the perspective view which looked at the sensor part of the piezoresistive detection type acceleration sensor concerning an embodiment of the invention from the surface side. 本発明の実施の形態に係るピエゾ抵抗検出型の加速度センサのセンサ部を裏面側から見た斜視図である。It is the perspective view which looked at the sensor part of the acceleration sensor of a piezoresistive detection type concerning an embodiment of the invention from the back side. センサ部を構成するSOI基板を示す断面図である。It is sectional drawing which shows the SOI substrate which comprises a sensor part. 本発明の他のピエゾ抵抗検出型の加速度センサのセンサ部を示す平面図である。It is a top view which shows the sensor part of the acceleration sensor of the other piezoresistance detection type of this invention. 従来のピエゾ抵抗検出型の加速度センサを示す斜視図である。It is a perspective view which shows the conventional piezoresistance detection type acceleration sensor. 加速度センサ内の抵抗素子によって形成されるブリッジ回路を示す回路図である。It is a circuit diagram which shows the bridge circuit formed of the resistive element in an acceleration sensor. 加速度センサ内の抵抗素子によって形成されるブリッジ回路を示す回路図である。It is a circuit diagram which shows the bridge circuit formed of the resistive element in an acceleration sensor.

符号の説明Explanation of symbols

1 センサ部
11 枠部
12 重錘体
13 ビーム
14 補助重錘体
DESCRIPTION OF SYMBOLS 1 Sensor part 11 Frame part 12 Weight body 13 Beam 14 Auxiliary weight body

Claims (1)

断面視で矩形状をなす枠状のストッパ、前記ストッパの略中心部に設けられた重錘体、前記重錘体と前記ストッパとを接続するものであり、交叉する二直線状をなす4本のビーム、及び前記ビームのうちの2本と前記ストッパの内周面とにより包囲される空間内に遊挿する状態で前記重錘体に連設されており、側面が略垂直柱状をなす4つの補助重錘体を有するマイクロ構造体の加速度の作用に基づく機械的変形を、前記マイクロ構造体に形成した抵抗素子の電気抵抗の変化により検出して、加速度の向き及び大きさを検出すべくなしてある加速度センサの製造方法であって、
第1層乃至第3層を有するSOI基板を、前記ストッパ表面を含む第1主面に対して前記マイクロ構造体中心の垂直上方から見たときに、前記4本のビームのそれぞれの長さが同じであり、前記マイクロ構造体の第1主面中心を軸として90度回転させたときの前記垂直上方から見た前記ストッパ、前記重錘体、前記補助重錘体及び前記4本のビームの写像が、元の写像と同じになり、さらに第1主面がパッケージと相対する際に、前記パッケージに対して前記重錘体及び前記補助重錘体の第1主面部分が、僅かに離間して保持されるよう第1層から第2層まで反応性イオンエッチングして前記重錘体、前記ビーム、及び、前記補助重錘体を形成し、
前記抵抗素子を、前記ビーム上に形成し、
前記基板を、前記マイクロ構造体の第1主面の反対側の主面を第2主面としたとき、第1主面と第2主面とは、前記マイクロ構造体中心の垂直上方から見たときに、前記重錘体、前記補助重錘体、及び前記ストッパにおける平面視が略同じであり、さらに、前記重錘体及び前記補助重錘体が同一の厚みを有し、かつ前記ストッパと略同じ厚みであり、第2主面がパッケージと相対する際に、前記パッケージに対して前記重錘体及び前記補助重錘体の第2主面部分が、僅かに離間して保持され、前記補助重錘体が揺動した場合に、該補助重錘体が前記ストッパに抑止されるよう第3層から第2層まで反応性イオンエッチングして前記重錘体、及び、前記補助重錘体を形成し、
前記第2層をエッチングして前記重錘体、前記ビーム、及び、前記補助重錘体をリリースする
ことを特徴とする加速度センサの製造方法。
A rectangular frame-shaped stopper in cross-sectional view, a weight body provided at a substantially central portion of the stopper, and the weight body and the stopper are connected to each other, and four crossing two straight lines are formed. , And two of the beams and a space surrounded by the inner peripheral surface of the stopper are connected to the weight body in a state of being loosely inserted, and the side surface has a substantially vertical column shape 4 In order to detect the direction and magnitude of acceleration by detecting mechanical deformation based on the action of acceleration of a microstructure having two auxiliary weights based on a change in electrical resistance of a resistance element formed on the microstructure. A method of manufacturing an acceleration sensor,
When the SOI substrate having the first layer to the third layer is viewed from vertically above the center of the microstructure with respect to the first main surface including the stopper surface, the length of each of the four beams is The stopper, the weight body, the auxiliary weight body, and the four beams viewed from above the vertical direction when rotated 90 degrees around the center of the first main surface of the microstructure. When the mapping is the same as the original mapping and the first main surface is opposed to the package, the first main surface portions of the weight body and the auxiliary weight body are slightly separated from the package. Reactive ion etching from the first layer to the second layer so as to be held to form the weight body, the beam, and the auxiliary weight body,
Forming the resistive element on the beam;
When the substrate has a main surface opposite to the first main surface of the microstructure as a second main surface, the first main surface and the second main surface are viewed from vertically above the center of the microstructure. The weight body, the auxiliary weight body, and the stopper are substantially the same in plan view, and the weight body and the auxiliary weight body have the same thickness, and the stopper And when the second main surface is opposed to the package, the second main surface portion of the weight body and the auxiliary weight body is held slightly separated from the package, When the auxiliary weight body swings, the weight body and the auxiliary weight body are subjected to reactive ion etching from the third layer to the second layer so that the auxiliary weight body is restrained by the stopper. Form the body,
Etching the second layer to release the weight body, the beam, and the auxiliary weight body. A method for manufacturing an acceleration sensor, comprising:
JP2008144782A 2008-06-02 2008-06-02 Method for manufacturing acceleration sensor Expired - Lifetime JP5046240B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010210425A (en) * 2009-03-10 2010-09-24 Panasonic Electric Works Co Ltd Acceleration sensor

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129636A (en) * 1991-11-01 1993-05-25 Citizen Watch Co Ltd Element with diaphragm, and manufacture thereof
JPH05335596A (en) * 1991-02-25 1993-12-17 Nissan Motor Co Ltd Semiconductor acceleration sensor and manufacture thereof
JPH08107219A (en) * 1994-10-04 1996-04-23 Seiko Instr Inc Semiconductor acceleration sensor and its manufacture
JPH09269336A (en) * 1996-04-01 1997-10-14 Hitachi Ltd G microswitch
JPH10221362A (en) * 1997-02-05 1998-08-21 Japan Aviation Electron Ind Ltd Silicon acceleration sensor and method for manufacturing the same
JPH11214705A (en) * 1997-11-19 1999-08-06 Nikon Corp Acceleration detector and its manufacture as well as film thickness calculation
JP2002296293A (en) * 2001-03-30 2002-10-09 Sumitomo Metal Ind Ltd Acceleration sensor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335596A (en) * 1991-02-25 1993-12-17 Nissan Motor Co Ltd Semiconductor acceleration sensor and manufacture thereof
JPH05129636A (en) * 1991-11-01 1993-05-25 Citizen Watch Co Ltd Element with diaphragm, and manufacture thereof
JPH08107219A (en) * 1994-10-04 1996-04-23 Seiko Instr Inc Semiconductor acceleration sensor and its manufacture
JPH09269336A (en) * 1996-04-01 1997-10-14 Hitachi Ltd G microswitch
JPH10221362A (en) * 1997-02-05 1998-08-21 Japan Aviation Electron Ind Ltd Silicon acceleration sensor and method for manufacturing the same
JPH11214705A (en) * 1997-11-19 1999-08-06 Nikon Corp Acceleration detector and its manufacture as well as film thickness calculation
JP2002296293A (en) * 2001-03-30 2002-10-09 Sumitomo Metal Ind Ltd Acceleration sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010210425A (en) * 2009-03-10 2010-09-24 Panasonic Electric Works Co Ltd Acceleration sensor

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