JP2008198785A - High-frequency unit - Google Patents

High-frequency unit Download PDF

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Publication number
JP2008198785A
JP2008198785A JP2007032243A JP2007032243A JP2008198785A JP 2008198785 A JP2008198785 A JP 2008198785A JP 2007032243 A JP2007032243 A JP 2007032243A JP 2007032243 A JP2007032243 A JP 2007032243A JP 2008198785 A JP2008198785 A JP 2008198785A
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insulating substrate
semiconductor component
frequency unit
output circuit
pattern
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Yoshikazu Furuyama
義和 古山
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Alps Alpine Co Ltd
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Alps Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-frequency unit capable of surely carrying out the heat dissipation for a semiconductor component which is a heat producing component, and having good isolation between the input and output circuits thereof. <P>SOLUTION: In the high-frequency unit, the heat from the semiconductor component 11 which being the heat generating component can be dissipated from shield plates 2 and 3 via a grounding pattern 7, connecting conductors 9 and a heat dissipation pattern 8. Accordingly, because the shield plates 2 and 3 serve as the dissipation fins, the heat dissipation can surely be carried out, and because the shield plates 2 and 3 are interposed between the input and output circuits K1 and K2, a reliable shield is achieved between the input and output circuits K1 and K2, so that the good isolation can be obtained between them. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、テレビジョン受像機に使用されるデジタルチューナ等に適用して好適な高周波ユニットに関するものである。   The present invention relates to a high-frequency unit suitable for application to a digital tuner or the like used in a television receiver.

図５は従来の高周波ユニットの分解斜視図、図６は従来の高周波ユニットの要部拡大断面図であり、次に、従来の高周波ユニットの構成を図５，図６に基づいて説明すると、金属板からなる箱形の枠体５１内には、配線パターン（図示せず）が設けられた絶縁基板５２が収納され、この絶縁基板５２には、半導体部品５３が搭載されている。   FIG. 5 is an exploded perspective view of a conventional high-frequency unit, FIG. 6 is an enlarged cross-sectional view of a main part of the conventional high-frequency unit, and the configuration of the conventional high-frequency unit will be described with reference to FIGS. An insulating substrate 52 provided with a wiring pattern (not shown) is accommodated in a box-shaped frame 51 made of a plate, and a semiconductor component 53 is mounted on the insulating substrate 52.

金属板からなるカバー５４は、切り起こしされたバネ性のある舌片５４ａを有し、このカバー５４によって枠体５１の開放部が塞がれた際、舌片５４ａが半導体部品５３の本体部５３ａに弾接し、半導体部品５３の発熱が舌片５４ａを介してカバー５４から放熱されるようになって、従来の高周波ユニットが形成されている（例えば、特許文献１参照）。
特開平１１−１７７２６２号公報 The cover 54 made of a metal plate has a tongue piece 54 a that is cut and raised, and when the open portion of the frame 51 is closed by the cover 54, the tongue piece 54 a is the main body portion of the semiconductor component 53. The conventional high-frequency unit is formed by elastically contacting 53a so that the heat generated by the semiconductor component 53 is radiated from the cover 54 via the tongue 54a (see, for example, Patent Document 1).
JP 11-177262 A

従来の高周波ユニットにあっては、半導体部品５３に接触したカバー５４によって、発熱部品である半導体部品５３の放熱を行うことができる。しかしながら、近年のデジタル放送に対応するためにデジタル放送復調用の半導体部品５３を使用した場合、半導体部品５３の本体部５３ａに弾接した舌片５４ａでは、枠体５１内に形成された入、出力回路部間のシールドができず、入、出力回路部間のアイソレーションが悪くなるという問題がある。   In the conventional high-frequency unit, the semiconductor component 53 that is a heat-generating component can be radiated by the cover 54 in contact with the semiconductor component 53. However, when the digital broadcast demodulating semiconductor component 53 is used in order to cope with recent digital broadcasting, the tongue piece 54a elastically contacted with the main body 53a of the semiconductor component 53 is formed in the frame 51. There is a problem that the shielding between the output circuit portions cannot be performed, and the isolation between the input and output circuit portions is deteriorated.

本発明は、このような従来技術の実情に鑑みてなされたもので、その目的は、発熱部品である半導体部品の放熱が確実に行えると共に、入、出力回路部間のアイソレーションの良好な高周波ユニットを提供することにある。   The present invention has been made in view of such a state of the art, and an object of the present invention is to reliably dissipate heat from a semiconductor component, which is a heat-generating component, and to provide high-frequency isolation between input and output circuit units. To provide a unit.

上記の目的を達成するために、本発明の高周波ユニットは、入力回路部、及び出力回路部が形成された絶縁基板と、この絶縁基板に搭載され、本体部、及びこの本体部に設けられた金属平板部とを有した半導体部品と、絶縁基板を内部に収納した箱形の枠体と、この枠体内に取り付けられ、入力回路部と出力回路部との間をシールドするシールド板とを備え、絶縁基板には、配線パターンと、一面側に設けられた接地用パターンと、この接地用パターンに対向した状態で他面側に設けられた放熱パターンと、接地用パターンと放熱パターンとを繋ぐ接続導体とが設けられ、半導体部品は、金属平板部が接地用パターンに接触し、本体部に設けられた入、出力用端子のそれぞれが入力回路部と出力回路部の配線パターンに接続された状態で、絶縁基板の一面側に搭載されると共に、シールド板が放熱パターンに当接した状態で絶縁基板の他面側に配置されたことを特徴としている。   In order to achieve the above object, the high-frequency unit of the present invention is provided with an insulating substrate on which an input circuit portion and an output circuit portion are formed, and is mounted on the insulating substrate, and is provided on the main body portion and the main body portion. A semiconductor component having a metal flat plate portion, a box-shaped frame body in which an insulating substrate is housed, and a shield plate that is attached to the frame body and shields between the input circuit portion and the output circuit portion. In the insulating substrate, the wiring pattern, the grounding pattern provided on the one surface side, the heat radiation pattern provided on the other surface side facing the grounding pattern, and the grounding pattern and the heat radiation pattern are connected. A connecting conductor is provided, and the semiconductor flat plate portion of the semiconductor component is in contact with the grounding pattern, and the input and output terminals provided on the main body portion are connected to the wiring patterns of the input circuit portion and the output circuit portion, respectively. Condition While being mounted on one side of the substrate, it is characterized in that the shield plate is disposed on the other surface of the insulating substrate in contact with the heat radiation pattern.

このように構成した本発明は、発熱部品である半導体部品の熱が接地用パターン、接続導体、放熱パターンを介してシールド板から放熱でき、従って、シールド板が放熱フィンとなって、放熱を確実に行うことができると共に、シールド板が入、出力回路部間に介在しているため、入、出力回路部間のシールドが確実になって、アイソレーションの良好なものが得られる。   In the present invention configured as described above, the heat of the semiconductor component, which is a heat generating component, can be radiated from the shield plate through the grounding pattern, the connection conductor, and the heat radiation pattern. Since the shield plate is inserted and interposed between the output circuit sections, the shield between the input and output circuit sections is ensured, and a good isolation can be obtained.

また、本発明の高周波ユニットは、上記発明において、シールド板は長方形をなし、シールド板の短手方向の端面が放熱金属体に当接したことを特徴としている。   The high frequency unit of the present invention is characterized in that, in the above invention, the shield plate has a rectangular shape, and the end face in the short direction of the shield plate is in contact with the heat radiating metal body.

このように構成した本発明は、シールド板の端面を放熱パターンに当接するという簡単な構成で、半導体部品の放熱と、入、出力回路部間のアイソレーションの良好なものが得られる。   The present invention configured as described above has a simple structure in which the end face of the shield plate is brought into contact with the heat radiation pattern, so that the heat radiation of the semiconductor component and the isolation between the input and output circuit sections can be obtained.

上記の目的を達成するために、本発明の高周波ユニットは、入力回路部、及び出力回路部が形成された絶縁基板と、この絶縁基板に搭載され、本体部、及びこの本体部に設けられた金属平板部とを有した半導体部品と、絶縁基板を内部に収納した箱形の枠体と、この枠体内に取り付けられ、入力回路部と出力回路部との間をシールドするシールド板とを備え、絶縁基板には、配線パターンと、一面側に設けられた接地用パターンとが設けられ、半導体部品は、金属平板部が接地用パターンに接触し、本体部に設けられた入、出力用端子のそれぞれが入力回路部と出力回路部の配線パターンに接続された状態で、絶縁基板の一面側に搭載されると共に、金属平板部と対向する本体部の外面には、弾性のある熱伝導シートが設けられ、シールド板が熱伝導シートに弾接したことを特徴としている。   In order to achieve the above object, the high-frequency unit of the present invention is provided with an insulating substrate on which an input circuit portion and an output circuit portion are formed, and is mounted on the insulating substrate, and is provided on the main body portion and the main body portion. A semiconductor component having a metal flat plate portion, a box-shaped frame body in which an insulating substrate is housed, and a shield plate that is attached to the frame body and shields between the input circuit portion and the output circuit portion. The insulating substrate is provided with a wiring pattern and a grounding pattern provided on one side, and the semiconductor component has an input / output terminal provided on the main body with the metal flat plate portion in contact with the grounding pattern. Are connected to the wiring pattern of the input circuit portion and the output circuit portion, and are mounted on one side of the insulating substrate, and on the outer surface of the main body portion facing the metal flat plate portion, an elastic heat conduction sheet Is provided with a shield plate It is characterized in that elastic contact with the heat conductive sheet.

このように構成した本発明は、発熱部品である半導体部品の熱が熱伝導シートを介してシールド板から放熱でき、従って、シールド板が放熱フィンとなって、放熱を確実に行うことができると共に、シールド板が入、出力回路部間に介在しているため、入、出力回路部間のシールドが確実なって、アイソレーションの良好なものが得られる。   In the present invention configured as described above, the heat of the semiconductor component, which is a heat generating component, can be dissipated from the shield plate through the heat conductive sheet. Since the shield plate is interposed between the output circuit portions, the shield between the input and output circuit portions is ensured, and a good isolation can be obtained.

また、本発明の高周波ユニットは、上記発明において、シールド板は長方形をなし、シールド板の短手方向の端面が熱伝導シートに弾接したことを特徴としている。   The high-frequency unit of the present invention is characterized in that, in the above-described invention, the shield plate has a rectangular shape, and the end surface in the short direction of the shield plate is in elastic contact with the heat conductive sheet.

このように構成した本発明は、シールド板の端面を熱伝導シートに弾接するという簡単な構成で、半導体部品の放熱と、入、出力回路部間のアイソレーションの良好なものが得られる。   The present invention configured as described above has a simple structure in which the end face of the shield plate is elastically contacted with the heat conductive sheet, and a heat radiation of the semiconductor component and a good isolation between the input and output circuit portions can be obtained.

また、本発明の高周波ユニットは、上記発明において、入力回路部と出力回路部との間をシールドするシールド板が複数個配置されたことを特徴としている。   The high frequency unit of the present invention is characterized in that, in the above invention, a plurality of shield plates for shielding between the input circuit portion and the output circuit portion are arranged.

このように構成した本発明は、入、出力回路部が複数個のシールド板によってシールドされるため、入、出力回路部間のアイソレーションの良好なものが得られる。   In the present invention configured as described above, since the input and output circuit sections are shielded by the plurality of shield plates, a good isolation between the input and output circuit sections can be obtained.

また、本発明の高周波ユニットは、上記発明において、半導体部品がデジタル放送復調用で構成されたことを特徴としている。   The high frequency unit of the present invention is characterized in that, in the above invention, the semiconductor component is configured for digital broadcast demodulation.

このように構成した本発明は、半導体部品がデジタル放送復調用で構成されているため、デジタルチューナにおける入、出力回路部間のアイソレーションの良好なものが得られる。   In the present invention configured as described above, since the semiconductor component is configured for demodulating a digital broadcast, it is possible to obtain a good isolation between input and output circuit sections in the digital tuner.

本発明の高周波ユニットは、発熱部品である半導体部品の熱が接地用パターン、接続導体、放熱パターン、又は発熱部品である半導体部品の熱が熱伝導シートを介してシールド板から放熱でき、従って、シールド板が放熱フィンとなって、放熱を確実に行うことができると共に、シールド板が入、出力回路部間に介在しているため、入、出力回路部間のシールドが確実なって、アイソレーションの良好なものが得られる。   In the high frequency unit of the present invention, the heat of the semiconductor component that is a heat generating component can be dissipated from the shield plate through the heat conductive sheet, and the heat of the semiconductor component that is a heat generating component can be dissipated from the shield plate. The shield plate becomes a heat radiating fin, and heat can be reliably radiated, and since the shield plate is inserted and interposed between the output circuit parts, the shield between the input and output circuit parts is ensured, and the isolation Can be obtained.

発明の実施の形態について図面を参照して説明すると、図１は本発明の高周波ユニットの第１実施形態に係る下面図、図２は図１のＡ−Ａ線における断面図、図３は本発明の高周波ユニットの第２実施形態に係る要部断面図、図４は図３のＢ−Ｂ線における断面図である。   1 is a bottom view according to a first embodiment of a high-frequency unit of the present invention, FIG. 2 is a cross-sectional view taken along the line AA of FIG. 1, and FIG. The principal part sectional drawing which concerns on 2nd Embodiment of the high frequency unit of invention, FIG. 4 is sectional drawing in the BB line of FIG.

次に、本発明の高周波ユニットの第１実施形態に係る構成を図１、図２に基づいて説明すると、金属板からなる箱形の枠体１は、四角形状に配置された側壁１ａによって構成され、上下の位置に開放部１ｂが設けられている。   Next, the configuration according to the first embodiment of the high-frequency unit of the present invention will be described with reference to FIGS. 1 and 2. A box-shaped frame 1 made of a metal plate is configured by side walls 1 a arranged in a square shape. The opening 1b is provided at the upper and lower positions.

金属板からなる複数（ここでは３個）の第１，第２，第３のシールド板２，３，４は、枠体１内に設けられて、枠体１内を複数の区画室に区分けするようになっており、第１，第２のシールド板２，３は、互いに平行な状態で、一端が一側壁１ａに直角に繋がり、他端が枠体１内に延び、また、第３のシールド板４は、両端が互いに対向する側壁１ａに繋がり、中央部に第１，第２のシールド板２，３の他端が繋がった状態となっている。   A plurality of (here, three) first, second, and third shield plates 2, 3, and 4 made of metal plates are provided in the frame body 1, and the inside of the frame body 1 is divided into a plurality of compartments. The first and second shield plates 2 and 3 are parallel to each other, one end is connected to the side wall 1a at a right angle, the other end extends into the frame 1, and the third shield plate 3 The shield plate 4 is in a state where both ends are connected to the side walls 1a facing each other, and the other ends of the first and second shield plates 2 and 3 are connected to the center.

セラミック材等からなる絶縁基板５は、両面に設けられた信号パターン６ａと接地パターン６ｂからなる配線パターン６と、一面側（上面側）に設けられた四角形の接地用パターン７と、この接地用パターン７に対向した状態で他面側（下面側）に設けられた四角形の放熱パターン８とを有し、これ等のパターンは銅箔によって形成されている。   The insulating substrate 5 made of a ceramic material or the like includes a signal pattern 6a provided on both sides and a wiring pattern 6 consisting of a ground pattern 6b, a rectangular grounding pattern 7 provided on one side (upper side), and the grounding pattern. A square heat radiation pattern 8 provided on the other surface side (lower surface side) in a state of facing the pattern 7, and these patterns are formed of copper foil.

また、絶縁基板５には、接地用パターン７と放熱パターン８とを繋ぐように、絶縁基板５に設けられた複数の孔に充填された導電性のある接続導体（スルーホール）９と、両面に設けられた配線パターン６同士を電気的に繋ぐように、絶縁基板５に設けられた複数の孔に充填された導電性のある接続導体（スルーホール）１０とを有している。   The insulating substrate 5 has a conductive connecting conductor (through hole) 9 filled in a plurality of holes provided in the insulating substrate 5 so as to connect the grounding pattern 7 and the heat radiation pattern 8, and both surfaces. A conductive connecting conductor (through hole) 10 filled in a plurality of holes provided in the insulating substrate 5 is provided so as to electrically connect the wiring patterns 6 provided in the insulating substrate 5.

デジタル放送復調用ＩＣからなる発熱部品である半導体部品１１は、本体部１２と、この本体部１２に設けられ、高周波信号を入力するための複数の入力用の端子１３ａ、及びデジタル信号を出力するための複数の出力用の端子１３ｂと、本体部１２の外面（下面）に設けられた金属平板部１４とで構成されている。   A semiconductor component 11 which is a heat generating component composed of an IC for demodulating a digital broadcast is provided with a main body 12, a plurality of input terminals 13a for inputting high-frequency signals, and a digital signal. And a plurality of output terminals 13b, and a metal flat plate portion 14 provided on the outer surface (lower surface) of the main body portion 12.

この半導体部品１１は、金属平板部１４が接地用パターン７に接触して電気的に接地され、入、出力用端子１３ａ、１３ｂが配線パターン６に接続された状態で、絶縁基板５の一面側に搭載されると共に、ここでは図示しないが、絶縁基板５には、半導体部品１１以外のチップ型の抵抗やコンデンサ等の電子部品が搭載されて、入力回路部Ｋ１と出力回路部Ｋ２が形成されている。   The semiconductor component 11 is electrically grounded with the metal flat plate portion 14 in contact with the grounding pattern 7, and the input and output terminals 13 a and 13 b are connected to the wiring pattern 6 on one side of the insulating substrate 5. Although not shown here, electronic components such as chip-type resistors and capacitors other than the semiconductor component 11 are mounted on the insulating substrate 5 to form an input circuit portion K1 and an output circuit portion K2. ing.

即ち、半導体部品１１の入力用端子１３ａが入力回路部Ｋ１の配線パターン６に接続され、また、半導体部品１１の出力用端子１３ｂが出力回路部Ｋ２の配線パターン６に接続された状態となっている。   That is, the input terminal 13a of the semiconductor component 11 is connected to the wiring pattern 6 of the input circuit portion K1, and the output terminal 13b of the semiconductor component 11 is connected to the wiring pattern 6 of the output circuit portion K2. Yes.

このような構成を有する絶縁基板５は、放熱パターン８が長方形をなした第１，第２のシールド板２，３の短手方向の端面に当接するように、枠体１内に収納された状態で枠体１に取り付けられると共に、放熱パターン８と第１，第２のシールド板２，３間には、半田１５付けが行われる。   The insulating substrate 5 having such a configuration is accommodated in the frame 1 so that the heat radiation pattern 8 abuts on the end surfaces in the short direction of the first and second shield plates 2 and 3 having a rectangular shape. It is attached to the frame 1 in a state, and solder 15 is applied between the heat radiation pattern 8 and the first and second shield plates 2 and 3.

そして、絶縁基板５が枠体１に取り付けられた際、第１，第２のシールド板２，３は、絶縁基板５の他面側の位置で、入力用端子１３ａと出力用端子１３ｂの中間部、即ち、入力回路部Ｋ１と出力回路部Ｋ２との間に位置して、入力回路部Ｋ１と出力回路部Ｋ２との間をシールドするようになっている。   When the insulating substrate 5 is attached to the frame 1, the first and second shield plates 2 and 3 are positioned between the input terminal 13 a and the output terminal 13 b at positions on the other surface side of the insulating substrate 5. Part, that is, between the input circuit unit K1 and the output circuit unit K2, and shields between the input circuit unit K1 and the output circuit unit K2.

また、発熱部品である半導体部品１１の熱は、接地用パターン７、接続導体９、放熱パターン８を介して第１，第２のシールド板２，３から放熱でき、従って、第１，第２のシールド板２，３が放熱フィンとなって、放熱を確実に行うことができると共に、第１，第２のシールド板２，３は、枠体１の側壁１ａや第３のシールド板４に繋がっているため、半導体部品１１の熱は、枠体１の側壁１ａや第３のシールド板４からも放熱できるようになっている。   Further, the heat of the semiconductor component 11 which is a heat generating component can be radiated from the first and second shield plates 2 and 3 through the grounding pattern 7, the connection conductor 9, and the heat radiation pattern 8. The shield plates 2 and 3 serve as heat radiating fins so that heat can be reliably radiated, and the first and second shield plates 2 and 3 are attached to the side wall 1a of the frame body 1 and the third shield plate 4 respectively. Since they are connected, the heat of the semiconductor component 11 can be dissipated from the side wall 1 a of the frame body 1 and the third shield plate 4.

なお、上記第１実施形態において、枠体１の開放部１ｂをカバーで覆うようにしても良く、また、第１，第２のシールド板２，３の短手方向の端部にＬ字状の曲げ部を設け、この曲げ部を放熱パターン８に当接するようにしても良い。   In the first embodiment, the open portion 1b of the frame 1 may be covered with a cover, and the L-shaped ends of the first and second shield plates 2 and 3 in the short direction. The bent portion may be provided, and the bent portion may be brought into contact with the heat radiation pattern 8.

次に、図３，図４に示す本発明の高周波ユニットの第２実施形態について説明すると、半導体部品１１は、金属平板部１４が接地用パターン７に接触して電気的に接地され、入、出力用端子１３ａ、１３ｂが配線パターン６に接続された状態で、絶縁基板５の一面側に搭載されると共に、本体部１２の上面（金属平板部１４と対向する面）には、例えばシリコン系の材料からなる弾性のある熱伝導シート１６が設けられている。   Next, a second embodiment of the high-frequency unit of the present invention shown in FIGS. 3 and 4 will be described. The semiconductor component 11 is electrically grounded with the metal flat plate portion 14 in contact with the grounding pattern 7. While the output terminals 13a and 13b are connected to the wiring pattern 6, they are mounted on one surface side of the insulating substrate 5, and the upper surface of the main body portion 12 (the surface facing the metal flat plate portion 14) is, for example, silicon-based. An elastic heat conductive sheet 16 made of the above material is provided.

そして、絶縁基板５が枠体１に取り付けられた際、第１，第２，第３のシールド板２，３，４が絶縁基板５の一面側（上面側）に位置すると共に、第１，第２のシールド板２，３の凹部２ａ、３ａ内には、半導体部品１１の本体部１２が位置して、熱伝導シート１６が第１，第２のシールド板２，３の短手方向の端面に弾接するようになっている。   When the insulating substrate 5 is attached to the frame 1, the first, second, and third shield plates 2, 3, and 4 are located on one surface side (upper surface side) of the insulating substrate 5, The main body 12 of the semiconductor component 11 is located in the recesses 2a and 3a of the second shield plates 2 and 3, and the heat conductive sheet 16 is in the short direction of the first and second shield plates 2 and 3. It comes to elastically contact the end face.

この時、第１，第２のシールド板２，３は、半導体部品１１の入力用端子１３ａと出力用端子１３ｂの中間部、即ち、入力回路部Ｋ１と出力回路部Ｋ２との間に位置して、入力回路部Ｋ１と出力回路部Ｋ２との間をシールドするようになっている。   At this time, the first and second shield plates 2 and 3 are positioned between the input terminal 13a and the output terminal 13b of the semiconductor component 11, that is, between the input circuit unit K1 and the output circuit unit K2. Thus, the space between the input circuit unit K1 and the output circuit unit K2 is shielded.

また、発熱部品である半導体部品１１の熱は、熱伝導シート１６を介して第１，第２のシールド板２，３から放熱でき、従って、第１，第２のシールド板２，３が放熱フィンとなって、放熱を確実に行うことができると共に、第１，第２のシールド板２，３は、枠体１の側壁１ａや第３のシールド板４に繋がっているため、半導体部品１１の熱は、枠体１の側壁１ａや第３のシールド板４からも放熱できるようになっている。   Further, the heat of the semiconductor component 11 which is a heat generating component can be radiated from the first and second shield plates 2 and 3 via the heat conductive sheet 16, and therefore the first and second shield plates 2 and 3 radiate heat. The fins can reliably radiate heat, and the first and second shield plates 2 and 3 are connected to the side wall 1a of the frame 1 and the third shield plate 4, so that the semiconductor component 11 This heat can be dissipated from the side wall 1a of the frame 1 and the third shield plate 4 as well.

なお、この第２実施形態において、前記第１実施形態と同一部品には、同一番号を付し、ここではその説明を省略する。   In the second embodiment, the same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted here.

本発明の高周波ユニットの第１実施形態に係る下面図である。It is a bottom view concerning a 1st embodiment of a high frequency unit of the present invention. 図１のＡ−Ａ線における断面図である。It is sectional drawing in the AA of FIG. 本発明の高周波ユニットの第２実施形態に係る要部断面図である。It is principal part sectional drawing which concerns on 2nd Embodiment of the high frequency unit of this invention. 図３のＢ−Ｂ線における断面図である。It is sectional drawing in the BB line of FIG. 従来の高周波ユニットの分解斜視図である。It is a disassembled perspective view of the conventional high frequency unit. 従来の高周波ユニットの要部拡大断面図である。It is a principal part expanded sectional view of the conventional high frequency unit.

符号の説明Explanation of symbols

１ 枠体
１ａ 側壁
１ｂ 開放部
２ 第１のシールド板
２ａ 凹部
３ 第２のシールド板
３ａ 凹部
４ 第３のシールド板
５ 絶縁基板
６ 配線パターン
６ａ 信号パターン
６ｂ 接地パターン
７ 接地用パターン
８ 放熱パターン
９ 接続導体
１０ 接続導体
１１ 半導体部品
１２ 本体部
１３ａ、１３ｂ 端子
１４ 金属平板部
１５ 半田
１６ 熱伝導シート
Ｋ１ 入力回路部
Ｋ２ 出力回路部 DESCRIPTION OF SYMBOLS 1 Frame 1a Side wall 1b Open part 2 1st shield plate 2a Recess 3 Second shield plate 3a Recess 4 Third shield plate 5 Insulating substrate 6 Wiring pattern 6a Signal pattern 6b Ground pattern 7 Ground pattern 8 Heat radiation pattern 9 Connection conductor 10 Connection conductor 11 Semiconductor component 12 Body part 13a, 13b Terminal 14 Metal flat plate part 15 Solder 16 Thermal conduction sheet K1 Input circuit part K2 Output circuit part

Claims (6)

入力回路部、及び出力回路部が形成された絶縁基板と、この絶縁基板に搭載され、本体部、及びこの本体部に設けられた金属平板部とを有した半導体部品と、前記絶縁基板を内部に収納した箱形の枠体と、この枠体内に取り付けられ、前記入力回路部と前記出力回路部との間をシールドするシールド板とを備え、
前記絶縁基板には、配線パターンと、一面側に設けられた接地用パターンと、この接地用パターンに対向した状態で他面側に設けられた放熱パターンと、前記接地用パターンと前記放熱パターンとを繋ぐ接続導体とが設けられ、
前記半導体部品は、前記金属平板部が前記接地用パターンに接触し、前記本体部に設けられた入、出力用端子のそれぞれが前記入力回路部と前記出力回路部の前記配線パターンに接続された状態で、前記絶縁基板の一面側に搭載されると共に、前記シールド板が前記放熱パターンに当接した状態で前記絶縁基板の他面側に配置されたことを特徴とする高周波ユニット。 An insulating substrate on which an input circuit portion and an output circuit portion are formed; a semiconductor component mounted on the insulating substrate and having a main body portion and a metal flat plate portion provided on the main body portion; and the insulating substrate inside A box-shaped frame housed in the frame body, and a shield plate attached to the frame body and shielding between the input circuit section and the output circuit section,
The insulating substrate includes a wiring pattern, a grounding pattern provided on one surface side, a heat radiation pattern provided on the other surface side in a state of facing the grounding pattern, the grounding pattern, and the heat radiation pattern. And a connecting conductor for connecting
In the semiconductor component, the metal flat plate portion is in contact with the grounding pattern, and input and output terminals provided on the main body portion are connected to the wiring patterns of the input circuit portion and the output circuit portion, respectively. The high-frequency unit is mounted on the one surface side of the insulating substrate in a state and disposed on the other surface side of the insulating substrate in a state where the shield plate is in contact with the heat radiation pattern. 前記シールド板は長方形をなし、前記シールド板の短手方向の端面が前記放熱パターンに当接したことを特徴とする請求項１記載の高周波ユニット。   The high-frequency unit according to claim 1, wherein the shield plate has a rectangular shape, and an end surface in a short direction of the shield plate is in contact with the heat radiation pattern. 入力回路部、及び出力回路部が形成された絶縁基板と、この絶縁基板に搭載され、本体部、及びこの本体部に設けられた金属平板部とを有した半導体部品と、前記絶縁基板を内部に収納した箱形の枠体と、この枠体内に取り付けられ、前記入力回路部と前記出力回路部との間をシールドするシールド板とを備え、
前記絶縁基板には、配線パターンと、一面側に設けられた接地用パターンとが設けられ、
前記半導体部品は、前記金属平板部が前記接地用パターンに接触し、前記本体部に設けられた入、出力用端子のそれぞれが前記入力回路部と前記出力回路部の前記配線パターンに接続された状態で、前記絶縁基板の一面側に搭載されると共に、前記金属平板部と対向する前記本体部の外面には、弾性のある熱伝導シートが設けられ、前記シールド板が前記熱伝導シートに弾接したことを特徴とする高周波ユニット。 An insulating substrate on which an input circuit portion and an output circuit portion are formed; a semiconductor component mounted on the insulating substrate and having a main body portion and a metal flat plate portion provided on the main body portion; and the insulating substrate inside A box-shaped frame housed in the frame body, and a shield plate attached to the frame body and shielding between the input circuit section and the output circuit section,
The insulating substrate is provided with a wiring pattern and a grounding pattern provided on one side,
In the semiconductor component, the metal flat plate portion is in contact with the grounding pattern, and input and output terminals provided on the main body portion are connected to the wiring patterns of the input circuit portion and the output circuit portion, respectively. In this state, an elastic heat conductive sheet is mounted on the one surface side of the insulating substrate and opposed to the metal flat plate portion, and an elastic heat conductive sheet is provided on the outer surface of the main body, and the shield plate is elastic to the heat conductive sheet. A high-frequency unit characterized by contact. 前記シールド板は長方形をなし、前記シールド板の短手方向の端面が前記熱伝導シートに弾接したことを特徴とする請求項３記載の高周波ユニット。   The high-frequency unit according to claim 3, wherein the shield plate has a rectangular shape, and an end surface in a short direction of the shield plate is in elastic contact with the heat conductive sheet. 前記入力回路部と前記出力回路部との間をシールドする前記シールド板が複数個配置されたことを特徴とする請求項１から４の何れか１項に記載の高周波ユニット。   5. The high-frequency unit according to claim 1, wherein a plurality of the shield plates that shield between the input circuit unit and the output circuit unit are arranged. 前記半導体部品がデジタル放送復調用で構成されたことを特徴とする請求項１から５の何れか１項に記載の高周波ユニット。   6. The high-frequency unit according to claim 1, wherein the semiconductor component is configured for digital broadcast demodulation.
JP2007032243A 2007-02-13 2007-02-13 High-frequency unit Withdrawn JP2008198785A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110063492A1 (en) * 2009-09-14 2011-03-17 Samsung Electro-Mechanics Co., Ltd. Pcb and camera module having the same
JP2011187729A (en) * 2010-03-09 2011-09-22 Sumitomo Heavy Ind Ltd Electric field radiation-reducing structure
JP2012182400A (en) * 2011-03-03 2012-09-20 Ricoh Co Ltd Heat dissipation device for integrated circuit, and electronic equipment
JPWO2010137492A1 (en) * 2009-05-29 2012-11-15 原田工業株式会社 Automotive noise filter

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2010137492A1 (en) * 2009-05-29 2012-11-15 原田工業株式会社 Automotive noise filter
US20110063492A1 (en) * 2009-09-14 2011-03-17 Samsung Electro-Mechanics Co., Ltd. Pcb and camera module having the same
KR101047482B1 (en) * 2009-09-14 2011-07-08 삼성전기주식회사 Printed circuit board and camera module including the same
US8558946B2 (en) * 2009-09-14 2013-10-15 Samsung Electro-Mechanics Co., Ltd. PCB and camera module having the same
JP2011187729A (en) * 2010-03-09 2011-09-22 Sumitomo Heavy Ind Ltd Electric field radiation-reducing structure
JP2012182400A (en) * 2011-03-03 2012-09-20 Ricoh Co Ltd Heat dissipation device for integrated circuit, and electronic equipment

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