JP2008198477A5 - Plasma generator - Google Patents

Plasma generator Download PDF

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Publication number
JP2008198477A5
JP2008198477A5 JP2007032128A JP2007032128A JP2008198477A5 JP 2008198477 A5 JP2008198477 A5 JP 2008198477A5 JP 2007032128 A JP2007032128 A JP 2007032128A JP 2007032128 A JP2007032128 A JP 2007032128A JP 2008198477 A5 JP2008198477 A5 JP 2008198477A5
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JP
Japan
Prior art keywords
shield
chamber
generating apparatus
plasma
plasma generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007032128A
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Japanese (ja)
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JP2008198477A (en
JP5475216B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2007032128A priority Critical patent/JP5475216B2/en
Priority claimed from JP2007032128A external-priority patent/JP5475216B2/en
Publication of JP2008198477A publication Critical patent/JP2008198477A/en
Publication of JP2008198477A5 publication Critical patent/JP2008198477A5/en
Application granted granted Critical
Publication of JP5475216B2 publication Critical patent/JP5475216B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (4)

チャンバ内部にてプラズマを発生させるプラズマ発生装置であって、
上記チャンバの外側と所定の隙間を隔てて上記チャンバを囲み、上記チャンバの最高温部の近傍に上記シールドの内側と外側とを連通させる開口部が形成されたシールドと、
上記シールドの内側から吸気し、上記シールドの外側に排気するファンと
を具備することを特徴とするプラズマ発生装置。 A plasma generator for generating plasma inside a chamber, comprising:
Enclose the chamber at a outside a predetermined gap of the chamber, a shield having an opening formed for communicating the inside and outside of the shield near the hottest portion of the chamber,
A plasma generating apparatus comprising: a fan which takes in air from the inside of the shield and exhausts the air to the outside of the shield. 上記チャンバと上記シールドは同軸の円筒形であり、
上記ファンは当該シールドの上面の中央に配置されることを特徴とする請求項１に記載のプラズマ発生装置。 The chamber and the shield are coaxial and cylindrical,
The plasma generating apparatus according to claim 1, wherein the fan is disposed at the center of the upper surface of the shield . 上記開口部は上記シールドの側面に一定の高さで周方向に均等に複数配置されることを特徴とする請求項１または２のいずれかに記載のプラズマ発生装置。 The plasma generating apparatus according to any one of claims 1 and 2 , wherein a plurality of the opening portions are uniformly disposed circumferentially at a constant height on the side surface of the shield . 上記開口部は上記チャンバの最高温部よりわずかに下の位置に配置されることを特徴とする請求項１乃至３のいずれかに記載のプラズマ発生装置。 The plasma generating apparatus according to any one of claims 1 to 3, wherein the opening is disposed slightly below the highest temperature portion of the chamber .
JP2007032128A 2007-02-13 2007-02-13 Plasma generator Expired - Fee Related JP5475216B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007032128A JP5475216B2 (en) 2007-02-13 2007-02-13 Plasma generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007032128A JP5475216B2 (en) 2007-02-13 2007-02-13 Plasma generator

Publications (3)

Publication Number Publication Date
JP2008198477A JP2008198477A (en) 2008-08-28
JP2008198477A5 true JP2008198477A5 (en) 2010-03-25
JP5475216B2 JP5475216B2 (en) 2014-04-16

Family

ID=39757217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007032128A Expired - Fee Related JP5475216B2 (en) 2007-02-13 2007-02-13 Plasma generator

Country Status (1)

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JP (1) JP5475216B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107680915B (en) 2016-08-02 2020-11-10 北京北方华创微电子装备有限公司 Plasma source cooling mechanism and semiconductor processing equipment

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07280233A (en) * 1994-04-11 1995-10-27 Wakui Kogyo Kk Incinerator
JPH08274080A (en) * 1995-03-29 1996-10-18 Sony Corp Microwave plasma processing system
JP3502514B2 (en) * 1996-09-09 2004-03-02 東京エレクトロン株式会社 Heat treatment equipment
JP3009371B2 (en) * 1997-03-14 2000-02-14 ニチメン電子工研株式会社 Diamond-like carbon film deposition equipment
JP3736060B2 (en) * 1997-08-25 2006-01-18 株式会社日立製作所 Plasma processing equipment
JP4384301B2 (en) * 1999-09-13 2009-12-16 株式会社日立製作所 Plasma processing equipment
JP2003124202A (en) * 2002-07-25 2003-04-25 Mitsubishi Electric Corp Semiconductor processing unit and method for processing semiconductor substrate
JP2005043029A (en) * 2003-07-21 2005-02-17 Tatsue Sawaguchi Incineration method and incinerator
JP4381963B2 (en) * 2003-11-19 2009-12-09 パナソニック株式会社 Plasma processing equipment
JP2005150606A (en) * 2003-11-19 2005-06-09 Hitachi High-Technologies Corp Plasma treatment apparatus
JP2005197523A (en) * 2004-01-08 2005-07-21 Hitachi Kokusai Electric Inc Substrate treatment equipment
JP4104070B2 (en) * 2004-02-02 2008-06-18 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, heating apparatus, and heat insulating material
JP2005347667A (en) * 2004-06-07 2005-12-15 Hitachi Kokusai Electric Inc Semiconductor fabrication device

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