JP2008192413A - Protection circuit module - Google Patents

Protection circuit module Download PDF

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Publication number
JP2008192413A
JP2008192413A JP2007024226A JP2007024226A JP2008192413A JP 2008192413 A JP2008192413 A JP 2008192413A JP 2007024226 A JP2007024226 A JP 2007024226A JP 2007024226 A JP2007024226 A JP 2007024226A JP 2008192413 A JP2008192413 A JP 2008192413A
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Prior art keywords
protection circuit
circuit module
recess
insulating support
secondary battery
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Japanese (ja)
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Toshiaki Ono
敏明 小野
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Tokin Corp
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NEC Tokin Corp
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Priority to JP2007024226A priority Critical patent/JP2008192413A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15192—Resurf arrangement of the internal vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Secondary Cells (AREA)
  • Connection Of Batteries Or Terminals (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a protection circuit module which is downsized and superior in mechanical strength characteristics such as impact resistance and bending resistance strength characteristics. <P>SOLUTION: This is the protection circuit module which is connected to a secondary battery, and has a function of cutting off at least one of a charge circuit or a discharge circuit of the secondary battery, and it is constituted of an insulating supporting base board 1 having a recess 11 in its upper face and having a single layer or multiple layers of wirings 2 at the bottom part of the recess 11, semiconductor elements 7, 8 mounted interior the recess 11 of the insulating support base board 1, and electronic parts such as a passive element 9. The above electronic parts are embedded by a resin 16 which is an insulating material. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、２次電池の過充電、過放電、過電流等の充放電を制御することができる保護回路モジュールに関し、特にその実装方法を改善した保護回路モジュールに関する。   The present invention relates to a protection circuit module capable of controlling charge / discharge such as overcharge, overdischarge, and overcurrent of a secondary battery, and more particularly to a protection circuit module having an improved mounting method.

近年、携帯型の電子機器の小型軽量化はますます進展し、これらの機器に使用される２次電池に対しても小型化が要求されている。それに伴って２次電池に内蔵される保護回路モジュールも小型化が要求されており、特許文献１および２にそのような目的の保護回路モジュールの構成例が示されている。保護回路モジュールの部品実装は、パッケージ型のディスクリート半導体素子を使ったものから、ベアチップを回路基板に実装しワイヤボンディング配線後に全体を樹脂で封止するＣＯＢ（Chip on Board）構造へと進展し、さらに小型化が進み、ワイヤボンディングスペースを不要としたＣＳＰ（Chip Size Package）、フリップチップ実装の構造が主流となりつつある。   In recent years, the reduction in size and weight of portable electronic devices has further progressed, and the secondary batteries used in these devices are also required to be downsized. Accordingly, the protection circuit module built in the secondary battery is also required to be downsized, and Patent Documents 1 and 2 show configuration examples of such a protection circuit module. Component mounting of protection circuit modules has progressed from using package-type discrete semiconductor elements to a COB (Chip on Board) structure in which a bare chip is mounted on a circuit board and the whole is sealed with resin after wire bonding wiring. Further downsizing, CSP (Chip Size Package) and flip chip mounting structures that do not require a wire bonding space are becoming mainstream.

図５は従来の２次電池の保護回路モジュールの構成の一例を示す図であり、図５（ａ）は斜視図、図５（ｂ）は側断面図である。従来の２次電池の保護回路モジュールは、図５に示すように、単層または多層の配線５２を形成した絶縁支持基板５１に２次電池と接続するための電極プレート５３、２次電池のプラス出力端子５４，ＴＨ端子５５，マイナス出力端子５６を有し、配線５２上に過充電、過放電、過電流検出機能を有するＣＳＰ（Chip Size Package）構造の半導体素子７、電池出力をオンオフするためのＣＳＰ構造の半導体素子８、及び半導体素子７，８と保護回路を構成するパッシブ素子９などから構成される。   5A and 5B are diagrams showing an example of the configuration of a conventional secondary battery protection circuit module. FIG. 5A is a perspective view and FIG. 5B is a side sectional view. As shown in FIG. 5, a conventional secondary battery protection circuit module includes an electrode plate 53 for connecting a secondary battery to an insulating support substrate 51 on which a single-layer or multilayer wiring 52 is formed. A semiconductor element 7 having a CSP (Chip Size Package) structure having an output terminal 54, a TH terminal 55, and a negative output terminal 56 and having overcharge, overdischarge, and overcurrent detection functions on the wiring 52, for turning on / off the battery output The CSP structure semiconductor element 8 and the semiconductor elements 7 and 8 and the passive element 9 constituting a protection circuit are included.

半導体素子７としては電池用保護ＩＣが、半導体素子８としては大電流をオンオフするためにＦＥＴ等のパワートランジスタが、パッシブ素子９としてはコンデンサ、抵抗、ダイオード等がそれぞれ使用される。   A battery protection IC is used as the semiconductor element 7, a power transistor such as an FET is used as the semiconductor element 8 to turn on and off a large current, and a capacitor, a resistor, a diode, and the like are used as the passive element 9.

ここで実装されている半導体素子７，８はＢＧＡ（Ball Grid Array）構造のＣＳＰ素子であり、絶縁支持基板５１の配線５２とサイズ０．１〜０．３ｍｍφ程度の半田ボールにより半田接続されている。この構成により保護回路モジュールの大幅な小型化が達成できる。   The semiconductor elements 7 and 8 mounted here are CSP elements having a BGA (Ball Grid Array) structure, which are solder-connected to the wiring 52 of the insulating support substrate 51 by solder balls having a size of about 0.1 to 0.3 mmφ. Yes. With this configuration, the protection circuit module can be significantly reduced in size.

特開２００６−４７８３号公報JP 2006-4783 A 特開２００３−８６１５９号公報JP 2003-86159 A

しかし上記のＢＧＡ構造の素子により実装された保護回路モジュールは、従来のパッケージ型の半導体素子を実装したものに比べて実装部分の耐曲げ強度、剪断強度がきわめて弱い構造となっており、落下等による衝撃や振動により故障を生じやすい。また、半導体素子の実装と反対面は、シリコン基板が露出した構造であり、僅かな衝撃で劈開する恐れを有している。   However, the protection circuit module mounted with the above-mentioned BGA structure element has a structure in which the bending strength and shear strength of the mounting portion are extremely weak compared to a conventional package type semiconductor element mounted, such as dropping. It is easy to cause failure due to shock and vibration. Further, the surface opposite to the mounting of the semiconductor element has a structure in which the silicon substrate is exposed, and there is a risk of cleaving with a slight impact.

そこで、特許文献１などに示されるように回路基板上に実装された電子部品を樹脂でモールドすることにより耐曲げ強度や耐剪断強度、耐衝撃性能などを向上させている。このような実装構造の一例を図６に示す。図５のように実装された半導体素子７，８およびパッシブ素子９の周囲を樹脂１０等でモールドしたものであるが、基板に曲げ応力が加わった際に、絶縁支持基板５１と樹脂１０との界面端部１８では、絶縁支持基板５１と樹脂１０の硬度が異なっていることにより剥離が発生し易く、剥離が発生した場合、樹脂１０と一緒に実装された半導体素子７，８およびパッシブ素子９に絶縁支持基板５１から剥離される方向に応力が働き、素子剥離或いは素子破損が発生し易いという問題がある。   Therefore, as shown in Patent Document 1 and the like, the bending strength, shear strength, impact resistance, and the like are improved by molding an electronic component mounted on a circuit board with a resin. An example of such a mounting structure is shown in FIG. The periphery of the semiconductor elements 7 and 8 and the passive element 9 mounted as shown in FIG. 5 is molded with a resin 10 or the like. When bending stress is applied to the substrate, the insulating support substrate 51 and the resin 10 At the interface end 18, peeling is likely to occur due to the hardness of the insulating support substrate 51 and the resin 10 being different. When peeling occurs, the semiconductor elements 7, 8 and the passive element 9 mounted together with the resin 10. Further, there is a problem that stress acts in the direction of peeling from the insulating support substrate 51, and element peeling or element breakage easily occurs.

また、特許文献２では、凹型構造の絶縁ケース及び蓋の両面に保護回路を構成する素子を実装し、それらを簡単に接合一体化できるように形成して組み合わせ、保護回路部品をケース内部に組み込んだ立体構造のものが提案されている。しかし、パッケージ型のディスクリート半導体素子を搭載しており、また二つのケースを積み重ねた構造であることから小型化には限界がある。   Further, in Patent Document 2, elements that constitute a protection circuit are mounted on both sides of a concave insulating case and a lid, and are formed and combined so that they can be easily joined and integrated, and a protection circuit component is incorporated inside the case. A three-dimensional structure has been proposed. However, since a package type discrete semiconductor element is mounted and two cases are stacked, there is a limit to downsizing.

そこで、本発明の課題は、これらの欠点を除去し、小型でかつ耐衝撃性や耐曲げ強度特性などの機械的強度特性に優れた保護回路モジュールを提供することにある。   Therefore, an object of the present invention is to provide a protective circuit module that eliminates these drawbacks and is small and excellent in mechanical strength characteristics such as impact resistance and bending strength characteristics.

上記課題を解決するため、本発明の保護回路モジュールは、２次電池に接続され、前記２次電池の所定値以上の過電圧、過放電、過電流の少なくとも１つを検出して前記２次電池の充電回路または放電回路の少なくとも１つを遮断する機能を有する保護回路モジュールであって、上面に凹部を有し該凹部の底部に単層または多層の配線部分を有する絶縁支持体と、該絶縁支持体の前記凹部の内部に実装された電子部品とにより構成されることを特徴とする。   In order to solve the above problems, a protection circuit module of the present invention is connected to a secondary battery, and detects at least one of overvoltage, overdischarge, and overcurrent of the secondary battery that is equal to or higher than a predetermined value to detect the secondary battery. A protective circuit module having a function of interrupting at least one of the charging circuit or the discharging circuit of the first and second insulating circuits, wherein the insulating support has a concave portion on the upper surface and a single-layer or multilayer wiring portion on the bottom of the concave portion, and the insulation It is comprised by the electronic component mounted in the inside of the said recessed part of a support body, It is characterized by the above-mentioned.

また、前記電子部品が絶縁物に埋め込まれていてもよい。   The electronic component may be embedded in an insulator.

また、前記凹部の側壁と底面とが交わる部分において、前記側壁の少なくとも一部に窪みを設け、前記絶縁物が前記窪みにも充填されていてもよい。   Further, a recess may be provided in at least a part of the side wall at a portion where the side wall and the bottom surface of the recess intersect, and the insulating material may be filled in the recess.

以上のように、本発明においては保護回路モジュールを構成する半導体素子などの電子部品を絶縁性支持体に設けた凹部内に収納することにより形状の小型化および取り扱い上の不備による電子部品の機械的損傷の可能性を低減し、さらに、それを樹脂などの絶縁物でモールドして埋め込むことにより機械的強度を向上し、さらにはその凹部の側壁に窪みを設けそこに絶縁物を充填することにより電子部品の剥離強度などを向上させることができる。   As described above, in the present invention, electronic parts such as a semiconductor element constituting a protection circuit module are accommodated in a recess provided in an insulating support, thereby reducing the shape and handling the electronic parts due to inadequate handling. The possibility of mechanical damage is reduced, and further, mechanical strength is improved by embedding it by molding it with an insulator such as a resin. Furthermore, a recess is provided on the side wall of the recess to fill the insulator. As a result, the peel strength of the electronic component can be improved.

よって本発明により、小型でかつ耐衝撃性や耐曲げ強度特性などの機械的強度特性に優れた保護回路モジュールを得ることができる。   Therefore, according to the present invention, it is possible to obtain a protection circuit module that is small in size and excellent in mechanical strength characteristics such as impact resistance and bending strength characteristics.

以下に図面を参照しながら本発明の実施の形態を説明する。   Embodiments of the present invention will be described below with reference to the drawings.

図１は本発明による保護回路モジュールの第１の実施の形態の構成を示す図であり、図１（ａ）は斜視図、図１（ｂ）は側断面図である。また、図２は本実施の形態の保護回路モジュールに使用する絶縁性支持基板の構造を示す図であり、図２（ａ）は斜視図、図２（ｂ）は側断面図である。   FIG. 1 is a diagram showing a configuration of a first embodiment of a protection circuit module according to the present invention, FIG. 1 (a) is a perspective view, and FIG. 1 (b) is a side sectional view. FIG. 2 is a view showing the structure of an insulating support substrate used in the protection circuit module of the present embodiment, FIG. 2 (a) is a perspective view, and FIG. 2 (b) is a side sectional view.

図１において、本実施の形態の保護回路モジュールは、その上面に凹部１１を有し凹部１１の底部に単層または多層の配線２を有する絶縁支持基板１と、絶縁支持基板１の凹部１１の内部に実装された電子部品とにより構成されている。   In FIG. 1, the protection circuit module of the present embodiment includes an insulating support substrate 1 having a recess 11 on the top surface and a single-layer or multilayer wiring 2 on the bottom of the recess 11, and a recess 11 of the insulating support substrate 1. It is comprised with the electronic component mounted in the inside.

ここで、絶縁支持基板１は図２に示すように、その上面の中央部に凹部１１が設けられ、その底部の基板内には単層または多層の配線２が配置されている。また、２次電池と接続するための電極用配線１２が絶縁支持基板１の上面の凹部以外の部分に設けられ、絶縁支持基板１の凹部の底部基板の下面には２次電池のプラス出力端子４、ＴＨ出力端子５、マイナス出力端子６が設けられている。また、絶縁性支持基板１の凹部の底面１５にも、保護回路を構成する電子部品を実装するための配線を配している。   Here, as shown in FIG. 2, the insulating support substrate 1 is provided with a recess 11 at the center of the upper surface thereof, and a single-layer or multilayer wiring 2 is disposed in the substrate at the bottom. Also, electrode wiring 12 for connecting to the secondary battery is provided in a portion other than the concave portion on the upper surface of the insulating support substrate 1, and a positive output terminal of the secondary battery is provided on the lower surface of the bottom substrate of the concave portion of the insulating support substrate 1. 4, TH output terminal 5 and minus output terminal 6 are provided. In addition, wiring for mounting electronic components constituting the protection circuit is also arranged on the bottom surface 15 of the recess of the insulating support substrate 1.

さらに、凹部１１の側壁１７と底面１５とが交わる部分において、側壁１７に窪み１３を設けている。   Further, a recess 13 is provided in the side wall 17 at a portion where the side wall 17 and the bottom surface 15 of the recess 11 intersect.

図１に示すように、絶縁性支持基板１の凹部１１の底面１５の配線上に、図５と同様な過充電、過放電、過電流検出機能を有するＣＳＰ構造の半導体素子７、電池出力をオンオフするための半導体素子８、及び半導体素子７，８と保護回路を構成するパッシブ素子９が設置され、電極用配線１２上に２次電池と接続するための電極プレート３が実装される。実装は、実装部に半田クリームを塗布し、その上に電子部品を搭載し、リフロー等の加熱で半田実装するものとする。   As shown in FIG. 1, a semiconductor element 7 having a CSP structure having overcharge, overdischarge and overcurrent detection functions similar to those in FIG. A semiconductor element 8 for turning on and off, and a passive element 9 constituting a protection circuit with the semiconductor elements 7 and 8 are installed, and an electrode plate 3 for connecting to a secondary battery is mounted on the electrode wiring 12. For mounting, solder cream is applied to the mounting portion, an electronic component is mounted thereon, and solder mounting is performed by heating such as reflow.

半導体素子７としては電池用保護ＩＣが、半導体素子８としては大電流をオンオフするためにＦＥＴ等のパワートランジスタが、パッシブ素子９としてはコンデンサ、抵抗、ダイオード等がそれぞれ使用される。半導体素子７，８はサイズ０．１〜０．３ｍｍφ程度の半田ボールを有しており、その厚さは半田ボールを含めて０．３〜０．５ｍｍ程度である。ただし、厚さはこれ限るものではなく、任意の厚みに対応可能である。パッシブ素子９としては、１００５サイズ（１．０ｍｍ×０．５ｍｍ）、０６０３サイズ（０．６ｍｍ×０．３ｍｍ）、０４０２サイズ（０．４ｍｍ×０．２ｍｍ）等のサイズを用いることができる。   A battery protection IC is used as the semiconductor element 7, a power transistor such as an FET is used as the semiconductor element 8 to turn on and off a large current, and a capacitor, a resistor, a diode, and the like are used as the passive element 9. The semiconductor elements 7 and 8 have solder balls having a size of about 0.1 to 0.3 mmφ, and the thickness thereof is about 0.3 to 0.5 mm including the solder balls. However, the thickness is not limited to this, and can be any thickness. As the passive element 9, a size such as a 1005 size (1.0 mm × 0.5 mm), a 0603 size (0.6 mm × 0.3 mm), a 0402 size (0.4 mm × 0.2 mm), or the like can be used.

絶縁支持基板１としては、一般的なガラスエポキシ基板を使用することができ、凹部１１の底部の厚さは０．５〜０．８ｍｍ程度、凹部１１の周辺の部分の厚さは１．０〜１．５ｍｍ程度である。凹部１１の深さは、凹部１１に埋め込まれる電子部品の高さと実装するための半田等の厚さを重ね合わせた厚さと同等以上とすることが望ましい。実装された電子部品の高さを絶縁支持基板１の凹部１１の周囲より低くすることにより、電子部品が外部との衝突により損傷を受けることを防止することが出来る。   As the insulating support substrate 1, a general glass epoxy substrate can be used. The thickness of the bottom of the recess 11 is about 0.5 to 0.8 mm, and the thickness of the periphery of the recess 11 is 1.0. About 1.5 mm. The depth of the recess 11 is preferably equal to or greater than the thickness of the electronic component embedded in the recess 11 and the thickness of solder or the like for mounting. By making the height of the mounted electronic component lower than the periphery of the recess 11 of the insulating support substrate 1, it is possible to prevent the electronic component from being damaged by collision with the outside.

図３は本発明による保護回路モジュールの第２の実施の形態の構成を示す図であり、図３（ａ）は斜視図、図３（ｂ）は側断面図である。本実施の形態の保護回路モジュールは絶縁支持基板１やその凹部１１などの形状、凹部１１に実装される半導体素子７，８などの電子部品、その凹部１１の底面１５上の配線への半田による実装方法などは図１の実施の形態と同じである。   FIG. 3 is a diagram showing a configuration of a second embodiment of a protection circuit module according to the present invention, FIG. 3 (a) is a perspective view, and FIG. 3 (b) is a side sectional view. The protection circuit module of the present embodiment is based on the shape of the insulating support substrate 1 and its recesses 11, electronic components such as the semiconductor elements 7 and 8 mounted in the recesses 11, and solder to the wiring on the bottom surface 15 of the recesses 11. The mounting method and the like are the same as in the embodiment of FIG.

但し、本実施の形態においては、半導体素子７，８とパッシブ素子９などが絶縁物である樹脂１６によって埋め込まれている。この時の凹部１１にモールドされる樹脂１６の上面は絶縁支持基板１と同一平面になることが望ましい。樹脂１６としてはエポキシ等の樹脂を使用でき、ポッティングや金型成形で形成できる。この時、流し込まれた樹脂１６は、絶縁支持基板１の凹部１１内の窪み１３にも充填されて成形される。   However, in the present embodiment, the semiconductor elements 7 and 8 and the passive element 9 are embedded with a resin 16 that is an insulator. At this time, the upper surface of the resin 16 molded in the recess 11 is preferably flush with the insulating support substrate 1. As the resin 16, a resin such as epoxy can be used, and it can be formed by potting or molding. At this time, the poured resin 16 is filled in the recess 13 in the recess 11 of the insulating support substrate 1 and molded.

これにより、保護回路を構成する半導体素子７，８とパッシブ素子９は、絶縁支持基板１の凹部１１に樹脂１６により完全に埋め込まれた構造となる。樹脂１６により電子部品が保護されており外部からの耐衝性が向上する。また、保護回路モジュールに曲げ応力が加わった場合でも、樹脂１６が窪み１３に流れ込んでおり、曲げ応力に対して、窪み上部１４が窪み１３に流れ込んだ部分の樹脂１６を押さえるため、絶縁支持基板１と樹脂１６の界面剥離強度が著しく向上している。   As a result, the semiconductor elements 7 and 8 and the passive element 9 constituting the protection circuit are completely embedded in the recess 11 of the insulating support substrate 1 with the resin 16. The electronic component is protected by the resin 16 and the impact resistance from the outside is improved. In addition, even when bending stress is applied to the protection circuit module, the resin 16 flows into the depression 13, and the depression upper portion 14 suppresses the resin 16 at the portion where the depression 14 flows into the depression 13 against the bending stress. The interfacial peel strength between 1 and resin 16 is significantly improved.

図４は本発明による保護回路モジュールの第３の実施の形態の構成を示す図であり、図４（ａ）は斜視図、図４（ｂ）は側断面図である。本実施の形態の保護回路モジュールは絶縁支持基板１やその凹部１１などの形状、凹部１１に実装される半導体素子７，８などの電子部品、その凹部１１の底面１５上の配線への半田による実装方法、樹脂１６による凹部１１のモールド方法などは図３の実施の形態と同じである。   FIGS. 4A and 4B are diagrams showing the configuration of a third embodiment of the protection circuit module according to the present invention. FIG. 4A is a perspective view and FIG. 4B is a side sectional view. The protection circuit module of the present embodiment is based on the shape of the insulating support substrate 1 and its recesses 11, electronic components such as the semiconductor elements 7 and 8 mounted in the recesses 11, and solder to the wiring on the bottom surface 15 of the recesses 11. The mounting method, the molding method of the recess 11 with the resin 16 and the like are the same as those in the embodiment of FIG.

但し、図３の実施の形態においては絶縁支持基板１の上に設けられた電極用配線１２上に２次電池と接続するための電極プレート３が絶縁支持基板１の面より飛び出して実装されているが、本実施の形態においては、電極プレート３が設置される部分の絶縁支持基板１の表面が電極プレート３の厚さ分だけ窪んでおり、電極プレート３が設置された状態で樹脂１６の上面、絶縁支持基板１、電極プレート３が同一平面となるように形成されている。これにより保護回路モジュールがさらに取扱い易くなり、外部との衝突により損傷を受ける可能性をさらに低減することが出来る。   However, in the embodiment of FIG. 3, the electrode plate 3 for connecting to the secondary battery is mounted on the electrode wiring 12 provided on the insulating support substrate 1 so as to protrude from the surface of the insulating support substrate 1. However, in the present embodiment, the surface of the insulating support substrate 1 where the electrode plate 3 is installed is recessed by the thickness of the electrode plate 3, and the resin 16 is placed with the electrode plate 3 installed. The upper surface, the insulating support substrate 1 and the electrode plate 3 are formed to be on the same plane. This makes it easier to handle the protection circuit module, and further reduces the possibility of damage due to collision with the outside.

以上のように、本発明により、小型でかつ耐衝撃性や耐曲げ強度特性などの機械的強度特性に優れた保護回路モジュールを得ることができる。   As described above, according to the present invention, a protection circuit module that is small in size and excellent in mechanical strength characteristics such as impact resistance and bending strength characteristics can be obtained.

なお、本発明は上記の実施の形態に限定されるものではないことは言うまでもなく、例えば、絶縁支持基板やそこに形成される凹部などの形状、実装される電子部品などは目的に合わせて最適な構成に設計することができる。   Needless to say, the present invention is not limited to the above-described embodiment. For example, the shape of the insulating support substrate, the recesses formed therein, the electronic components to be mounted, and the like are optimal for the purpose. Can be designed to any configuration.

本発明による保護回路モジュールの第１の実施の形態の構成を示す図、図１（ａ）は斜視図、図１（ｂ）は側断面図。The figure which shows the structure of 1st Embodiment of the protection circuit module by this invention, FIG. 1 (a) is a perspective view, FIG.1 (b) is a sectional side view. 本発明の実施の形態の保護回路モジュールに使用する絶縁性支持基板の構造を示す図、図２（ａ）は斜視図、図２（ｂ）は側断面図。The figure which shows the structure of the insulating support substrate used for the protection circuit module of embodiment of this invention, Fig.2 (a) is a perspective view, FIG.2 (b) is side sectional drawing. 本発明による保護回路モジュールの第２の実施の形態の構成を示す図、図３（ａ）は斜視図、図３（ｂ）は側断面図。The figure which shows the structure of 2nd Embodiment of the protection circuit module by this invention, Fig.3 (a) is a perspective view, FIG.3 (b) is side sectional drawing. 本発明による保護回路モジュールの第３の実施の形態の構成を示す図、図４（ａ）は斜視図、図４（ｂ）は側断面図。The figure which shows the structure of 3rd Embodiment of the protection circuit module by this invention, Fig.4 (a) is a perspective view, FIG.4 (b) is side sectional drawing. 従来の２次電池の保護回路モジュールの構成の一例を示す図、図５（ａ）は斜視図、図５（ｂ）は側断面図。The figure which shows an example of a structure of the protection circuit module of the conventional secondary battery, Fig.5 (a) is a perspective view, FIG.5 (b) is side sectional drawing. 回路基板上に実装された電子部品を樹脂でモールドする従来の実装構造の一例を示す図、図６（ａ）は斜視図、図６（ｂ）は側断面図。The figure which shows an example of the conventional mounting structure which molds the electronic component mounted on the circuit board with resin, Fig.6 (a) is a perspective view, FIG.6 (b) is a sectional side view.

符号の説明Explanation of symbols

１，５１ 絶縁支持基板
２，５２ 配線
３，５３ 電極プレート
４，５４ プラス出力端子
５，５５ ＴＨ出力端子
６，５６ マイナス出力端子
７，８ 半導体素子
９ パッシブ素子
１０，１６ 樹脂
１１ 凹部
１２ 電極用配線
１３ 窪み
１４ 窪み上部
１５ 底面
１７ 側壁
１８ 界面端部 1,51 Insulating support substrate 2,52 Wiring 3,53 Electrode plate 4,54 Positive output terminal 5,55 TH output terminal 6,56 Negative output terminal 7,8 Semiconductor element 9 Passive element 10,16 Resin 11 Recess 12 Recess for electrode Wiring 13 Dimple 14 Dimple top 15 Bottom 17 Side wall 18 Interface edge

Claims (3)

２次電池に接続され、前記２次電池の所定値以上の過電圧、過放電、過電流の少なくとも１つを検出して前記２次電池の充電回路または放電回路の少なくとも１つを遮断する機能を有する保護回路モジュールであって、上面に凹部を有し該凹部の底部に単層または多層の配線部分を有する絶縁支持体と、該絶縁支持体の前記凹部の内部に実装された電子部品とにより構成されることを特徴とする保護回路モジュール。   A function of detecting at least one of overvoltage, overdischarge, and overcurrent of the secondary battery that is greater than or equal to a predetermined value and shutting off at least one of the charging circuit or the discharging circuit of the secondary battery. A protection circuit module having a concave portion on the upper surface and a single-layer or multi-layer wiring portion at the bottom of the concave portion; and an electronic component mounted inside the concave portion of the insulating support. A protection circuit module characterized by comprising. 前記電子部品が絶縁物に埋め込まれていることを特徴とする請求項１記載の保護回路モジュール。   The protection circuit module according to claim 1, wherein the electronic component is embedded in an insulator. 前記凹部の側壁と底面とが交わる部分において、前記側壁の少なくとも一部に窪みを設け、前記絶縁物が前記窪みにも充填されていることを特徴とする請求項２に記載の保護回路モジュール。   The protection circuit module according to claim 2, wherein a recess is provided in at least a part of the side wall at a portion where the side wall and the bottom surface of the recess intersect, and the insulating material is also filled in the recess.
JP2007024226A 2007-02-02 2007-02-02 Protection circuit module Pending JP2008192413A (en)

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KR101208570B1 (en) * 2009-06-12 2012-12-06 주식회사 엘지화학 PCM with Novel Structure and Battery Pack Including the Same
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