JP2008191206A - Manufacturing method for electrooptical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for an electrooptical device which obtains a high contrast by forming a pixel electrode with high flatness. <P>SOLUTION: A stripping layer 61 is formed on a support substrate 60, and an electrode formation layer 62 with light reflectivity is formed on the stripping layer 61. Then an insulating layer 15 is provided on the electrode formation layer 62, and a thin film transistor 30 which conducts to the electrode formation layer 62 is provided on the insulating layer 15. The support substrate 60 is peeled off a stack 40 including the electrode formation layer 62 and thin film transistor 30 and the electrode formation layer 62 is divided in a predetermined pattern to form pixel electrodes. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an electro-optical device.

  In recent years, a liquid crystal device, which is an example of an electro-optical device, transmits a light from a back surface (backlight) and displays an image, and takes in light from outside and reflects it to display an image. Some of them are reflective.

  Usually, in a reflective liquid crystal device, an element substrate is formed by sequentially stacking a semiconductor, a circuit portion including a wiring layer, and a pixel electrode on a substrate. At this time, the pixel electrode functioning as a reflective film is desired to be as flat as possible in order to achieve high reflectance. However, since the circuit portion is uneven, the flatness of the pixel electrode formed so as to cover the circuit portion is deteriorated.

  Thus, a technique is known that covers the circuit portion and polishes an interlayer insulating film provided under the pixel electrode by a CMP (Chemical Mechanical Polishing) method to ensure the flatness of the electrode (for example, Patent Documents). 1). Generally, a pixel electrode is connected to a transistor by burying a part of the pixel electrode in a contact hole formed in an interlayer insulating film. For this reason, a depression is generated in the pixel electrode at the contact portion, thereby reducing the flatness of the pixel electrode.

In addition, in order to prevent the flatness due to the contact hole from being lowered, a technique is also known in which a filling layer is provided in the contact hole to eliminate the step at the contact portion and ensure the flatness (see, for example, Patent Document 2).
JP-A-8-160463 JP 2002-532768

  However, when the filler is provided in the contact hole, it is difficult to strictly control the amount of the filler so that the upper surface of the filler and the upper surface of the contact hole coincide with each other, and the unevenness caused by the contact hole is completely eliminated. This is difficult, and the flatness of the pixel electrode cannot be sufficiently improved. As the flatness of the pixel electrode is thus reduced, the light reflectance of the pixel electrode, and hence the pixel contrast is reduced.

  SUMMARY An advantage of some aspects of the invention is that it provides a method of manufacturing an electro-optical device that can obtain high contrast by forming a pixel electrode with high flatness.

  The electro-optical device manufacturing method of the present invention includes a step of forming a release layer on a support substrate, a step of forming an electrode-forming layer having light reflectivity on the release layer, and an insulating layer on the electrode-forming layer. Providing a thin film transistor that is electrically connected to the electrode formation layer on the insulating layer; and, after forming the thin film transistor, peeling the support substrate from the laminate including the electrode formation layer and the thin film transistor; And a step of dividing the electrode forming layer into a predetermined pattern and forming a pixel electrode after the step.

  According to the method for manufacturing the electro-optical device of the present invention, the electrode forming layer forming step is performed prior to the thin film transistor stacking step, and the thin film transistor is stacked on the electrode forming layer. The concave / convex shape is not affected. Therefore, the electrode formation layer has high flatness, and the flatness of the pixel electrode composed of this electrode formation layer is improved, and accordingly, the reflectance of the pixel electrode can be increased. Accordingly, an electro-optical device with high contrast and high reliability can be provided.

In the method of manufacturing the electro-optical device, it is preferable to use a refractory metal having a melting point higher than the temperature at which the thin film transistor is formed as the electrode forming layer.
In this way, it is possible to prevent the flatness from being deteriorated due to the electrode forming layer being deformed by heat during the formation of the thin film transistor. Therefore, the reliability of the manufacturing process of the electro-optical device can be further increased.

In the electro-optical device manufacturing method, in the pixel electrode forming step, the electrode forming layer is preferably covered with a reflective film having higher light reflectivity than the electrode forming layer.
According to this configuration, since the electrode forming layer constituting the pixel electrode is covered with the light reflecting film, a pixel electrode having high flatness and high light reflecting property can be obtained, and the contrast of the electro-optical device can be further improved.

In the electro-optical device manufacturing method, it is preferable that amorphous silicon is used as the release layer, and the laminate is peeled from the support substrate by irradiating the release layer with laser light.
In this way, irradiation with laser light generates hydrogen (gas) as will be described later, thereby generating an internal pressure, facilitating delamination or interfacial delamination, and facilitating the delamination process from the support substrate. It can be carried out.
At this time, it is preferable to use a substrate made of a translucent material as the support substrate.
In this case, the entire area of the release layer can be irradiated with laser light transmitted through the support substrate, and the support substrate can be easily peeled off.

In the electro-optical device manufacturing method, the laminate on the support substrate may be peeled off from the support substrate after being bonded to the temporary substrate.
If it does in this way, the malfunction that a laminated body will be damaged at the time of peeling of the said support substrate can be prevented.

  In addition, the electro-optical device manufacturing method preferably includes a step of polishing the electrode forming layer prior to dividing the electrode forming layer into a predetermined pattern.

  In this way, the flatness of the electrode forming layer can be further improved, and even if a part of the release layer remains, for example, it can be polished together with the electrode forming layer and removed simultaneously, thereby increasing the number of processes unnecessarily. Therefore, an electro-optical device that obtains high contrast can be provided.

(First embodiment)
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In addition, embodiment described below shows the one part aspect of this invention, and does not limit this invention. Moreover, in each drawing used for the following description, the scale is appropriately changed for each layer and each member so that each layer and each member has a size that can be recognized on the drawing.

  First, as one embodiment of a method for manufacturing an electro-optical device of the present invention, a manufacturing process of a TFT active matrix type liquid crystal device using a thin film transistor (hereinafter abbreviated as TFT) as a pixel switching element is taken as an example. I will give you a description. Further, this liquid crystal device is of a reflective type in which light incident from one substrate is reflected by the other substrate to display.

(Liquid crystal device)
Prior to the description of the manufacturing method, the configuration of the liquid crystal device manufactured by this method will be described. FIG. 1 is a diagram illustrating a configuration of a liquid crystal device according to the present embodiment. FIG. 1 is a plan configuration diagram of the liquid crystal device, and FIG. 2 is a cross-sectional configuration diagram taken along line HH ′ of FIG.

  As shown in FIGS. 1 and 2, in the liquid crystal device 100 of this embodiment, a TFT array substrate (active matrix substrate) 10 and a counter substrate 20 are bonded together via a sealing material 25 having a substantially rectangular frame shape in plan view. The liquid crystal layer 50 is sealed in a region surrounded by the sealing material 25. As described above, the liquid crystal device 100 according to the present embodiment is of a reflective type, and specifically displays light by reflecting light incident from the counter substrate 20 side on the TFT array substrate 10 side. It is.

  A liquid crystal injection port 35 is formed on a part of the sealing material 25 (lower side in the figure), and a sealing material 34 is formed so as to close the liquid crystal injection port 35. A peripheral parting part 33 having a rectangular frame shape in plan view is formed along the inner peripheral side of the sealing material 25, and an area inside the peripheral parting part is a pixel display area 18.

  In the pixel display area 18, pixel areas 19 are provided in a matrix. The pixel area 19 constitutes one pixel that is the minimum display unit of the pixel display area 18. In the area outside the sealing material 25, the data line driving circuit 101 and the external circuit mounting terminal 102 are formed along one side (the lower side in the drawing) of the TFT array substrate 10, and the two sides adjacent to this one side are formed. A scanning line driving circuit 104 is formed along each of them to form a peripheral circuit.

  On the remaining one side (illustrated upper side) of the TFT array substrate 10, a plurality of wirings 105 are provided for connecting the scanning line driving circuits 104 on both sides of the pixel display region 18. In addition, an inter-substrate conductive material 106 for providing electrical continuity between the TFT array substrate 10 and the counter substrate 20 is disposed at each corner of the counter substrate 20.

  As shown in FIG. 2, a plurality of pixel electrodes 9 are arranged on the inner surface side (liquid crystal layer side) of the TFT array substrate 10, and an alignment film 16 is formed so as to cover the pixel electrodes 9. . The TFT array substrate 10 is a rectangular substrate made of a light transmissive material such as quartz or glass. A peripheral parting 33 is formed on the inner surface side of the counter substrate 20, and a flat solid common electrode 21 is formed thereon. An alignment film 22 is formed so as to cover the common electrode 21. The pixel electrode 9 is manufactured by a method to be described later, and has high flatness and high reflectivity.

FIG. 3 is an equivalent circuit diagram of the liquid crystal device 100 described above.
As shown in the figure, a plurality of pixel areas 19 are arranged in a matrix in the pixel display area 18 of the liquid crystal device, and pixel electrodes 9 are arranged in these pixel areas 19 respectively. A TFT 30 is formed on the side of the pixel electrode 9. The TFT 30 is a switching element that controls energization to the pixel electrode 9. A data line 6 is connected to the source side of the TFT 30. Each data line 6 is supplied with image signals S1, S2,..., Sn from a data line driving element, for example.

  A scanning line 3 is connected to the gate side of the TFT 30. For example, scanning signals G1, G2,..., Gm are supplied to the scanning line 3 in a pulsed manner at a predetermined timing from a scanning line driving element. A pixel electrode 9 is connected to the drain side of the TFT 30.

  When the TFT 30 as a switching element is turned on for a certain period by the scanning signals G1, G2,..., Gm supplied from the scanning line 3, the image signals S1, S2,. The pixel region 19 is written with a predetermined timing through the pixel electrode 9.

  Image signals S1, S2,..., Sn written in the pixel area 19 are held for a certain period by a liquid crystal capacitor formed between the pixel electrode 9 and a common electrode described later. In order to prevent the retained image signals S1, S2,..., Sn from leaking, a storage capacitor 70 is formed between the pixel electrode 9 and the capacitor line 71 and is arranged in parallel with the liquid crystal capacitor. . Thus, when a voltage signal is applied to the liquid crystal, the alignment state of the liquid crystal molecules changes depending on the applied voltage level. As a result, the light source light incident on the liquid crystal is modulated to generate image light.

(Manufacturing method of liquid crystal device)
Next, a manufacturing method (process) of the liquid crystal device 100 will be described, and a cross-sectional structure of the liquid crystal device 100 will be described. The present invention has a feature in the process of manufacturing the TFT array substrate 10 in the liquid crystal device 100, and the other manufacturing processes are the same as those in the prior art, and thus detailed description of the processes is omitted. In addition, although the manufacturing process of the liquid crystal device 100 may be performed in the order described below, the order of the processes may be appropriately changed, and the procedure in each process may be appropriately changed.

4 and 5 are diagrams showing manufacturing steps of the liquid crystal device 100. FIG.
First, an amorphous silicon layer (peeling layer) 61 is formed on a support substrate 60 as shown in FIG. The support substrate 60 is a member used during the manufacturing process of the TFT array substrate 10 from this step, and is not a component of the liquid crystal device 100. Specifically, a light-transmissive heat-resistant substrate such as quartz glass that can withstand about 1000 ° C. is preferable, but heat-resistant glass such as soda glass, Corning 7059, and Nippon Electric Glass OA-2 can be used in addition to quartz glass. is there.

  The amorphous silicon (hereinafter referred to as amorphous Si) layer 61 is peeled off in the amorphous Si layer 61 or at the interface thereof by irradiation light such as laser light. The composition of the amorphous Si layer 61 is amorphous silicon (a-Si), and hydrogen (H) is contained in the amorphous silicon. When hydrogen is contained, an internal pressure is generated by generating hydrogen (gas) by the irradiation of the laser beam, and this promotes delamination or interfacial delamination. The hydrogen content is preferably about 2 at% or more, more preferably 2 at% to 20 at%.

  The thickness of the amorphous Si layer 61 is preferably about 1 nm to 20 μm, more preferably about 10 nm to 2 μm, and further preferably about 20 nm to 1 μm. This is because if the thickness of the amorphous Si layer 61 is too thin, the uniformity of the formed film thickness is lost and uneven peeling occurs. If the thickness of the amorphous Si layer 61 is too thick, the irradiation required for peeling is required. It may be necessary to increase the light power (light quantity), and it may take time to remove the residue of the amorphous Si layer 61 left after the peeling.

  The amorphous Si layer 61 has an effect of causing intralayer delamination or interfacial delamination by irradiation light such as laser light. Therefore, in addition to the above-described composition, the amorphous Si layer 61 causes ablation or the like by light energy, Material that causes delamination or interfacial delamination may be used, or may be caused by gas generated by vaporizing the components by light energy. In addition, the composition itself vaporizes and delamination occurs by the generated gas. Alternatively, a material that causes interface peeling may be used.

  For example, silicon oxide or silicate compounds, nitride ceramics such as silicon nitride, aluminum nitride, titanium nitride, organic polymer materials (those whose interatomic bonds are broken by light irradiation), metals such as Al, Li Ti, Mn, In, Sn, Y, La, Ce, Nd, Pr, Gd, or Sm, or an alloy containing at least one of these.

  As a method for forming the amorphous Si layer 61, a CVD method, particularly a low pressure CVD method or a plasma CVD method can be used. In the case where the amorphous Si layer 61 is formed from other materials, any method can be used as long as the amorphous Si layer 61 can be formed with a uniform thickness, depending on various conditions such as the composition and thickness of the amorphous Si layer 61. It is possible to select appropriately. For example, various vapor deposition methods such as CVD (including MOCCVD, low pressure CVD, ECR-CVD), vapor deposition, molecular beam vapor deposition (MB), sputtering, ion doping, PVD, electroplating, immersion plating (dipping) ), Various plating methods such as electroless plating method, Langmuir Projet (LB) method, spin coating method, spray coating method, roll coating method and other coating methods, various printing methods, transfer methods, ink jet methods, powder jet methods Etc. can be used. Furthermore, you may combine 2 or more types of methods among these. Further, when the amorphous Si layer 61 is formed using ceramic by a sol-gel method, or when the amorphous Si layer 61 is formed of an organic polymer material, the amorphous Si layer 61 is formed by a coating method, particularly by spin coating. preferable.

  Next, as shown in FIG. 4B, an electrode forming layer 62 having light reflectivity is formed on the amorphous Si layer 61 by using a CVD method, a sputtering method, or the like. At this time, a flat electrode forming layer 62 is formed on the amorphous Si layer 61. As the electrode forming layer 62 having such light reflectivity, a metal material can be exemplified. In the present embodiment, as the electrode forming layer 62, a refractory metal having a melting point higher than a temperature environment at the time of forming a thin film transistor described later, specifically, W (tungsten) is used.

  As a result, it is possible to prevent the electrode formation layer 62 from being deformed by heat at the time of forming a thin film transistor, which will be described later, and lowering the flatness. Therefore, the reliability of the manufacturing process of the liquid crystal device can be further increased.

  Next, as shown in FIG. 4C, the base protective layer 15 is formed on the electrode forming layer 62. The base protective layer 15 is made of silicon oxide or the like, and serves to insulate between a semiconductor layer manufactured in a later process and the electrode forming layer 62.

  Next, as shown in FIG. 4D, the semiconductor layer 1 made of polysilicon is formed on the base protective film 15 by a conventionally known process, and the gate insulating film 14 is formed to cover the semiconductor layer 1. A source line 3 is formed on the gate insulating film 14. A portion of the source line 3 facing the region functioning as the channel region 1a of the semiconductor layer 1 through the gate insulating film 14 functions as the gate electrode 3a. It should be noted that ion implantation is performed in the semiconductor layer 1 in the same manner as in the prior art to form a channel region 1a, a source region 1b, and a drain region 1c. A first interlayer insulating film 13 made of silicon oxide or the like is formed so as to cover the gate electrode (source line 3) 3a, and a drain electrode 17 is formed on the first interlayer insulating film 13. The drain electrode 17 is formed so as to be connected to the drain region 1 c and the electrode formation layer 62 through contact holes 5 and 7.

  Next, as shown in FIG. 5A, a second interlayer insulating film 12 is formed so as to cover the drain electrode 17. Then, the data line 6 is patterned so as to be connected to the source region 1b through the contact hole 4, and a thin film transistor (TFT 30) is formed.

  Next, as shown in FIG. 5B, a third interlayer insulating film 11 is formed so as to cover the data line 6 and the second interlayer insulating film 12. Then, a substrate body 10 </ b> A made of a translucent material such as glass is attached as a base material of the TFT array substrate 10 on the third interlayer insulating film 11.

  The substrate body 10A is not limited to the glass described above, and other translucent materials such as quartz, borosilicate glass, soda lime glass (blue plate glass), and crown glass (white plate glass) may be used. Since the liquid crystal device 100 of the present embodiment is of a reflective type, it is a matter of course that the substrate body 10A is not limited to a light transmissive material.

(Support substrate peeling process)
After the formation of the TFT 30, the support substrate 60 is peeled from the laminate 40 including the electrode formation layer 62, the thin film transistor (TFT 30), and the substrate body 10A. The laminate 40 may be peeled off from the support substrate after being bonded to the temporary substrate. According to this, the malfunction that the laminated body 40 is damaged at the time of peeling of the said support substrate 60 can be prevented.

  In the peeling process, the amorphous Si layer 61 is irradiated with laser light LA. Here, as described above, since the support substrate 60 is composed of a light-transmitting substrate, the entire area of the amorphous Si layer 61 can be irradiated with the laser light LA transmitted through the support substrate 60, and the support substrate 60 is peeled off. Becomes easy.

  Specifically, as shown in FIG. 5B, the amorphous Si layer 61 is irradiated with laser light LA from the back surface side of the support substrate 60 (opposite side of the stacked body 40). As temperature conditions, laser irradiation is preferably performed at 550 ° C. or lower. Thereby, the bonds of atoms and molecules in the amorphous Si layer 61 are weakened, or the hydrogen in the amorphous Si layer 61 is molecularized and separated from the bonds of crystals. Therefore, the bonding force between the support substrate 60 and the laminate 40 is completely eliminated, and the support substrate 60 can be easily peeled off.

  After the support substrate 60 is peeled off, the laminate 40 is turned upside down as shown in FIG. Thereby, the electrode formation layer 62 is arrange | positioned in the uppermost layer in the figure. Here, in order to improve the flatness of the pixel electrode formed by patterning in a later step, the electrode formation layer 62 is polished using a CMP (Chemical Mechanical Polishing) method, and the flatness of the electrode formation layer 62 is improved. You may make it raise further. In addition, during the peeling process, a part of the amorphous Si layer 61 may remain on the surface of the electrode forming layer 62. In this case, it is desirable to remove the amorphous Si layer 61 by dry etching or wet etching.

  Therefore, the electrode forming layer 62 may be polished by the CMP method and the remaining amorphous Si layer 61 may be removed. According to this configuration, the flatness of the electrode forming layer 62 can be further improved, and the remaining amorphous Si layer 61 can be removed at the same time. Thus, a liquid crystal device that obtains high contrast without unnecessarily increasing the number of steps is provided. it can.

  After the peeling process of the support substrate 60, the electrode forming layer 62 is divided into a predetermined pattern to form pixel electrodes 9. Hereinafter, the formation process of the pixel electrode 9 will be described. 6 shows a state in which the scale is reduced as compared with FIGS. 4 and 5, and a plurality of drain electrodes 17 connected to the TFT 30 corresponding to each pixel region are connected to the electrode formation layer 62. In FIG.

  First, as shown in FIG. 6A, etching is performed by using, for example, a mask M, and the electrode forming layer 62 is patterned into the shape of the pixel electrode corresponding to each pixel region, so as shown in FIG. 6B. A base portion 9a of the pixel electrode is formed.

  As described above, the electrode forming layer 62 is formed of a refractory metal (W: tungsten). Since the liquid crystal device 100 according to the present embodiment is of a reflective type, it has higher light reflectivity than the electrode formation layer 62 in the pixel electrode formation process in order to increase the reflectance at the pixel electrode. The electrode forming layer 62 is covered with a reflective film. Thereby, since the electrode forming layer 62 constituting the pixel electrode 9 is covered with the light reflecting film, the pixel electrode 9 having high flatness and high light reflecting property can be obtained, and the contrast of the liquid crystal device 100 can be improved.

  Specifically, in the present embodiment, as shown in FIG. 6C, the electrode forming layer 62 is patterned to form the base material portion 9a corresponding to each pixel electrode, and then the surface of the base material portion 9a is sputtered. The pixel electrode 9 is manufactured by forming the reflective film 9b made of Al or the like. In addition to Al, the material for forming the reflective film 9b can be exemplified by Au, Ag, etc. having light reflectivity. Since the pixel electrode 9 is mainly composed of the base portion 9a having very high flatness, the pixel electrode 9 itself has high flatness. That is, the pixel electrode 9 has high flatness, and has a high reflectance by the reflective film 9b provided on the upper surface thereof. In the above embodiment, the reflective film 9b is formed after the electrode forming layer 62 is patterned. However, after the reflective film 9b is formed on the electrode forming layer 62, the pixel electrodes 9 are patterned at once. You may form by.

  After the pixel electrode 9 is formed, the TT array substrate 10 can be manufactured by forming an alignment film so as to cover each pixel electrode 9.

  Then, in the same manner as in the prior art, the counter substrate 20 is formed, the liquid crystal layer 50 is filled between the counter substrate 20 and the TFT array substrate 10, and the substrates 10 and 20 are bonded together via the sealing material 25. . The liquid crystal device 100 can be manufactured through the above steps.

  As described above, according to the manufacturing method of the present embodiment, the electrode forming layer 62 is formed prior to the thin film transistor (TFT 30) stacking process, and the TFT 30 is stacked on the electrode forming layer 62. The uneven shape of the TFT 30 is not affected when the electrode formation layer 62 is formed. Therefore, the electrode forming layer 62 is a layer having high flatness, and the flatness of the pixel electrode 9 composed of the electrode forming layer 62 is improved. Accordingly, the reflectance of the pixel electrode 9 can be increased. Therefore, the liquid crystal device 100 with high contrast and high reliability can be provided.

FIG. 7 is a diagram showing a cross-sectional structure of the liquid crystal device 100 manufactured by the manufacturing process.
As shown in FIG. 7, the counter substrate 20 is mainly composed of a substrate body made of a light-transmitting material such as glass, a common electrode 21 and an alignment film 22 formed on the surface of the liquid crystal layer 50 side. An alignment film 22 that has been subjected to a predetermined alignment process such as a rubbing process is provided so as to cover the common electrode 21. An alignment film 16 that has been subjected to a predetermined alignment process such as a rubbing process is provided on the liquid crystal layer 50 side of the TFT array substrate 10. The material for forming the alignment films 16 and 22 is not limited to an organic material such as polyimide, and an inorganic material such as SiO ₂ may be used. Further, a polarizer 24 is provided on the opposite side (light incident surface) of the substrate body 20 </ b> A of the counter substrate 20 from the liquid crystal layer 50.

  As described above, the liquid crystal layer 50 sealed between the TFT array substrate 10 and the counter substrate 20 is in a predetermined alignment state by the alignment films 16 and 22 in a state where an electric field from the pixel electrode 9 is not applied. Take. For the liquid crystal layer 50, for example, a liquid crystal material having positive dielectric anisotropy is used. In addition to TN (Twisted Nematic) mode, VAN (Vertical Aligned Nematic) mode, STN (Super Twisted Nematic) mode, ECB (Electrically Controlled Birefringence) mode, OCB (Optical Compensated Bend) mode, etc. can do.

  As described above, the TFT array substrate 10 is manufactured by forming the base material portion 9 a constituting the pixel electrode 9 on the support substrate 60, laminating the TFT 30 or the like on the base material portion 9 a, and then inverting it. Is done. Therefore, as shown in FIG. 7, the semiconductor layer 1 made of polysilicon is provided below the pixel electrode 9 via the base protective layer 15. The semiconductor layer 1 functions as an active layer of the TFT 30, and the drain electrode 17 connected to the drain region 1 c in the semiconductor layer 1 is electrically connected to the pixel electrode 9 through the contact hole 7. ing. A gate electrode 3 a (scanning line 3) is provided below the semiconductor layer 1 via a gate insulating film 14. That is, the liquid crystal device 100 according to the present embodiment has a so-called bottom gate structure. A data line 6 extending downward from the source region 1b of the semiconductor layer 1 is also provided. First and second interlayer insulating films 13 and 12 are provided between the data line 6 and the TFT 30, and a third interlayer insulating film 11 is provided between the data line 6 and the substrate body 10A. ing.

  In addition, this invention is not limited to the said embodiment, In the range which does not deviate from the meaning of invention, it can change suitably. As an embodiment of the electro-optical device, the liquid crystal device has been described as an example, but the present invention is not limited to this. For example, light incident from one substrate side is reflected by the other substrate, and can be applied to an electro-optical device that performs display using the reflected light. In this case, a high reflectance can be obtained, A high-contrast display can be obtained.

It is a top view which shows schematic structure of a liquid crystal device. It is sectional drawing of the liquid crystal device by the HH 'line arrow in FIG. It is a figure which shows the equivalent circuit of a liquid crystal device. It is a figure for demonstrating the manufacturing process of a liquid crystal device. FIG. 5 is a diagram for explaining a manufacturing process for the liquid crystal device following FIG. 4. FIG. 5 is a diagram for explaining a manufacturing process for the liquid crystal device following FIG. 4. It is a sectional side view of the liquid crystal device obtained by the manufacturing method concerning this embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 9 ... Pixel electrode, 9b ... Reflective film, 15 ... Base protective film (insulating layer), 30 ... TFT (thin film transistor), 40 ... Laminated body, 60 ... Support substrate, 61 ... Amorphous silicon layer (peeling layer), 62 ... Electrode Formation layer, 100 ... Liquid crystal device (electro-optical device)

Claims (7)

Forming a release layer on the support substrate;
Forming an electrode forming layer having light reflectivity on the release layer;
Providing an insulating layer on the electrode forming layer, and providing a thin film transistor conducting to the electrode forming layer on the insulating layer;
After the formation of the thin film transistor, the step of peeling the support substrate from the laminate including the electrode formation layer and the thin film transistor;
And a step of dividing the electrode forming layer into a predetermined pattern and forming a pixel electrode after the peeling step.   2. The method of manufacturing an electro-optical device according to claim 1, wherein a refractory metal having a melting point higher than a temperature at which the thin film transistor is formed is used as the electrode forming layer.   3. The method of manufacturing an electro-optical device according to claim 1, wherein, in the pixel electrode forming step, the electrode forming layer is covered with a reflective film having higher light reflectivity than the electrode forming layer. .   The electro-optic according to any one of claims 1 to 3, wherein amorphous silicon is used as the release layer, and the laminate is peeled from the support substrate by irradiating the release layer with laser light. Device manufacturing method.   The method of manufacturing an electro-optical device according to claim 4, wherein the support substrate is made of a translucent material.   The method for manufacturing an electro-optical device according to claim 1, wherein the laminate on the support substrate is bonded to a temporary substrate and then peeled off from the support substrate.   The method for manufacturing an electro-optical device according to claim 1, further comprising a step of polishing the electrode forming layer prior to dividing the electrode forming layer into a predetermined pattern.

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