JP2008171905A - Method and device of inspecting solid-state imaging device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide the method of inspecting a semiconductor wafer by which a plurality of solid-state imaging devices formed on a semiconductor wafer can be optically and electrically inspected as a wafer at the same time. <P>SOLUTION: A solid-state imaging device wafer 21 is sucked to a contactor 241 comprised of a contactor frame 181 and a sheet frame 221 by reducing pressure, so as to connect the external connection electrode 131 of each of the solid-state imaging devices 11 with the anisotropic conductive member 211 of the contactor 241. Light is given to the main side of the solid-state imaging device wafer 21 to inspect all solid-state imaging devices 11 as a wafer at the same time. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an inspection method and an inspection device for a solid-state imaging device, and relates to a technique for inspecting a solid-state imaging device having an external connection electrode on the back surface in a wafer state.

  2. Description of the Related Art Conventionally, a method for reliably and quickly inspecting a solid-state image sensor for electrical characteristic defects is performed by fixing a wafer on a prober stage that supports the wafer and inspecting each of a plurality of solid-state image sensors formed in the wafer. The probe needle is connected to each of a plurality of electrode surfaces of each solid-state imaging device, and an electrical characteristic inspection is performed.

  At that time, the light that has passed through the optical filter is condensed by a lens, and the light is irradiated to each pixel of the solid-state image sensor as a spotlight to perform an electrical property inspection. When the inspection of the pixel is completed, the prober stage and the wafer For example, Patent Document 1 discloses that each pixel is inspected sequentially by moving the pixel at pixel intervals.

  In addition, the conventional mounting method of the solid-state imaging device requires a sealing container or a transparent member for housing the solid-state imaging device, and dust may be deposited on the imaging region surface of the solid-state imaging device during the assembly process. Therefore, high relative positional accuracy between the outer shape of the transparent member or the sealing container and the imaging region of the solid-state imaging device is required. For this reason, problems such as a reduction in thickness and size of the solid-state imaging device, a decrease in yield, difficulty in assembly adjustment, and the like have arisen.

  As a solution to these problems, for example, Patent Document 2 discloses a light receiving sensor mounting structure. This includes a semiconductor wafer, a light receiving sensor formed on the main surface of the semiconductor wafer, a through electrode that penetrates the semiconductor wafer and connects to the light receiving sensor itself or the wiring to reach the back surface, and a gap from the light receiving sensor. And a sealing material for adhering and fixing the light transmissive protective member and the main surface of the semiconductor wafer in a region other than the light receiving sensor.

  Furthermore, in the conventional solid-state imaging device, the gold wire is located below the light shielding plate. For this reason, since the light shielding plate cannot be disposed close to the conductor pattern surface of the solid-state imaging device at a predetermined distance or more, the reflected light from the gold wire or the like enters the imaging region. Therefore, when an electrical signal is converted into an image, there is a problem that optical noise such as flare and smear appears in the image.

For solving these problems, for example, Patent Document 3 discloses a solid-state imaging device. This is provided with a solid-state imaging device in which a peripheral region is formed outside the imaging region, and a transparent protective glass disposed so as to cover the solid-state imaging device. A light shielding layer that shields at least a part is formed, and protective glass is bonded to the solid-state imaging device.
JP 59-225540 A JP 2001-351997 A JP 2002-261260 A

  In the first example described above, the electrical characteristics and optical characteristics of the plurality of conductor patterns arranged around each solid-state imaging device are irradiated with light in a state where the probe needle for inspection is in pressure contact with each surface. Perform an inspection.

  However, in this method, part of the irradiated light is reflected by the inspection probe needle, and the reflected light of the light enters the imaging region. For this reason, flare and smear characteristics cannot be accurately inspected. In addition, it is difficult to inspect a large number of solid-state imaging devices at the same time.

  Furthermore, in a semiconductor wafer in which a constituent member such as a transparent member or a plurality of protruding electrodes (bumps) is attached on each solid-state imaging device, the characteristic inspection is performed while pressing an inspection probe needle on the protruding electrode. When the probe needle for inspection comes into contact with it, a scar of the probe needle is formed on the surface of the protruding electrode. For this reason, when the solid-state imaging device is secondarily mounted on the mounting substrate, there is a problem in that poor bonding reliability occurs between the protruding electrode and the secondary mounting wiring substrate due to the above-described scratches.

  The above second example presents a solution for problems such as thinning, restrictions on size reduction, yield reduction, difficulty in assembly adjustment, and the like of the solid-state imaging device. However, an inspection method for the solid-state imaging device having this configuration is not disclosed.

  The third example presents a solution to the problem that optical noise such as flare and smear appears in the image due to the reflected light entering the imaging region. However, an inspection method for the solid-state imaging device having this configuration is not disclosed.

  The present invention is capable of simultaneously and electrically inspecting a plurality of solid-state imaging devices formed on a main surface of a semiconductor wafer, and can realize a thin and small-sized solid-state imaging device at low cost. It is an object to provide an inspection method and an inspection apparatus.

  In order to solve the above problems, an inspection method for a solid-state imaging device of the present invention includes a plurality of solid-state imaging devices, each imaging region of the solid-state imaging device on a main surface side, and a back surface Inspecting a semiconductor wafer having a plurality of external connection electrodes of the solid-state imaging device on the side, and electrically connecting the external connection electrodes of the solid-state imaging device to a terminal portion of a contactor And simultaneously or sequentially measuring optical or electrical characteristics of the solid-state imaging device while irradiating predetermined inspection light from the main surface side of the semiconductor wafer.

  By adopting such an inspection method, it is possible to simultaneously inspect optical and electrical characteristics of a plurality of solid-state imaging devices while emitting light from the main surface side of the semiconductor wafer, thereby realizing a quick and inexpensive inspection method. be able to. In addition, by determining whether or not the solid-state imaging device is accepted or rejected by preliminary inspection on the semiconductor wafer before forming the solid-state imaging device, the number of members is only the number of acceptable solid-state imaging devices when assembling the solid-state imaging device. It can be realized at low cost.

  In addition, the contactor includes a flexible substrate having a terminal portion formed of conductive terminals formed at a plurality of predetermined positions and anisotropic conductive members disposed on the conductive terminals, and a sheet frame fixed to the flexible substrate. It is characterized by that.

  By adopting such an inspection method, the anisotropic conductive member can absorb the height variation of the external connection electrodes of the solid-state imaging device, so that the connection to the external connection electrodes of a plurality of solid-state imaging devices in the semiconductor wafer is possible. Can be accurately performed, the positioning of the conductive terminal and the external connection electrode before the inspection can be facilitated, and the scar of the probe needle is not generated on the surface of the external connection electrode.

  Further, the space of the contactor formed between the semiconductor wafer and the back surface of the semiconductor wafer is decompressed, and the external connection electrode of the solid-state imaging device and the terminal portion of the contactor are pressed.

  By adopting such an inspection method, an external pressure is applied to the entire surface of the semiconductor wafer due to the reduced pressure, and each external connection electrode of the semiconductor wafer and the conductive terminal are pressed and electrically connected via the anisotropic conductive member. Therefore, a uniform force is applied over a wide area of the semiconductor wafer, the contact resistance of the pressure contact portion between the external connection electrode and the terminal portion is sufficiently low to obtain a good power transmission path, and a yield due to contact resistance variation during measurement. The reduction can be prevented and the cost can be reduced.

  Further, a lattice-shaped light shielding member having an opening larger than the size of the imaging region at a position corresponding to each imaging region of the solid-state imaging device formed on the semiconductor wafer, the inspection light source and the wafer It arrange | positions between and inspects.

  By adopting such an inspection method, it is possible to avoid stray light due to reflection of inspection light from the adjacent solid-state imaging device and reflection of inspection light from each part of the contactor from affecting the measurement result, and influence of disturbance light It is possible to easily measure the electrical characteristics of the solid-state imaging device without being subjected to the above.

Further, the contactor is supported and inspected so that the semiconductor wafer is positioned on the lower side.
By adopting such an inspection method, it is possible to prevent a decrease in inspection yield due to dust adhering to the transparent member surface of the solid-state imaging device during measurement, and to reduce the cost of the solid-state imaging device.

Further, the measurement is performed while changing the amount of the inspection light stepwise.
By using such an inspection method, it is possible to easily carry out detailed characteristics and failure analysis of the solid-state imaging device, and to accumulate more reliable design methods.

Further, the measurement is performed while irradiating the entire surface of the main surface of the semiconductor wafer with the inspection light.
By adopting such an inspection method, optical and electrical measurements in a plurality of solid-state imaging devices can be measured simultaneously, and the cost of the solid-state imaging device can be reduced as the inspection time is shortened.

Further, the measurement is performed while irradiating a part of the main surface of the semiconductor wafer including the solid-state imaging device to be inspected with the inspection light.
By using such an inspection method, it is possible to easily carry out detailed characteristics and failure analysis of the solid-state imaging device individually, and to accumulate more reliable design methods. In addition, since the inspection light source can be reduced, an inexpensive inspection light generator can be used, and a lower cost inspection method can be realized.

  The inspection apparatus for a solid-state imaging device according to the present invention includes a plurality of solid-state imaging devices, each imaging area of the solid-state imaging device on the main surface side, and each of the solid-state imaging devices on the back surface side. A flexible wiring board for inspecting a semiconductor wafer having a plurality of external connection electrodes, comprising a contact portion that is mounted on the semiconductor wafer to form a contactor unit and that is in pressure contact with the external connection electrodes on the back surface of the semiconductor wafer A contact light source for irradiating the solid-state imaging device on the main surface of the semiconductor wafer with test light, a tester for determining the generation of electrical signals and measurement results, and between the contactor unit and the tester And a connection system for transmitting the generated signal and the electrical signal of the measurement result.

  By adopting such a configuration, an efficient and inexpensive inspection method capable of simultaneously measuring a plurality of solid-state imaging devices can be realized.

  According to the present invention, an external pressure is applied to the entire surface of the semiconductor wafer due to the reduced pressure of the contactor space formed between the back surface of the semiconductor wafer, and an equal force is applied over a wide area of the semiconductor wafer. Absorbs variations in the height of the external connection electrode of the solid-state imaging device, so that the contact resistance of the pressure contact portion between the external connection electrode and the terminal portion is sufficient without causing a scar on the probe needle on the surface of the external connection electrode as in the past. Therefore, it is possible to obtain an excellent electric transmission path and to prevent a decrease in yield due to variations in contact resistance during measurement. In addition, by inspecting multiple solid-state imaging devices simultaneously using a sheet frame and contactor frame, it is possible to shorten the inspection time, reduce the thickness and size of the solid-state imaging device, and reduce costs by using the minimum required parts. It becomes.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. The thickness, length, and the like in these drawings differ from the actual shapes from the drawing creation. Also, the number of solid-state imaging devices formed on the semiconductor wafer and the number of conductor patterns on the main surface of the solid-state imaging device are different from actual ones and are easy to show.
(First embodiment)
FIG. 1 shows an inspection method for a solid-state imaging device according to a first embodiment of the present invention. The inspection method according to the present embodiment is a method for measuring a semiconductor wafer (hereinafter, referred to as a solid-state imaging device wafer 21) on which a plurality of solid-state imaging devices 11 are formed using a contactor 241.

  The contactor 241 includes a contactor frame 181, a seat frame 221, a flexible substrate 191, an anisotropic conductive member 211, a first seal ring 161, and a second seal ring 171.

  The contactor frame 181 has a cylindrical outer shape, and a partition step 301 is formed on the inner wall surface of the opening. The opening has a cylindrical upper opening at the partition step 301 and the lower part has a cylindrical upper opening. . The partition step 301 has an opening, and the opening has a diameter equal to or larger than the effective pattern area of the solid-state imaging device wafer 21.

  The depth of the cylindrical upper opening of the contactor frame 181 is preferably equal to or greater than the height from the lowermost surface of the external connection electrode 131 of the solid-state imaging device wafer 21 to the upper surface of the transparent member 151. The diameter of the cylindrical upper opening is formed to be larger than the diameter of the solid-state imaging device wafer 21 to be inspected by a predetermined value, and the predetermined value is in the range of 0.5 mm to 2 mm, preferably 1 mm.

  The diameter of the cylindrical lower opening may be equal to or larger than the diameter of the cylindrical upper opening. Further, a hole is formed on the inner surface of the opening of the partition step 301, and the hole is connected to the decompression port 231 on the outer side surface of the contactor frame 181. For the contactor frame 181, for example, resin, cast iron, aluminum or the like can be used.

  The seat frame 221 has an annular shape, and the outer diameter is smaller than the diameter of the cylindrical lower opening by a predetermined value, and the predetermined value is in the range of 0.5 mm to 3 mm, preferably 0.5 mm. The sheet frame 221 has an opening, and the opening has a diameter equal to or larger than the effective pattern area of the solid-state imaging device wafer 21. For the sheet frame 221, for example, resin, cast iron, aluminum, or the like can be used.

  The flexible substrate 191 has a disk shape, is equal to or larger than the outer diameter of the sheet frame 221, and has a thickness in the range of 0.05 mm to 1.5 mm, and preferably 1.0 mm. For the flexible substrate 191, for example, a polyimide resin, a polyamide resin, or the like can be used.

  A pattern of conductive terminals 201 is formed on the sheet upper surface of the flexible substrate 191, and this pattern is at a position corresponding to the plurality of external connection electrodes 131 of the solid-state imaging device wafer 21. The conductive terminal 201 is preferably laminated with a chemically stable foil of a good conductor or a coating of a plating layer on its surface. For example, the conductive terminal 201 is formed by using both electrolytic plating and electroless plating and then etched into a predetermined pattern. Thus, a laminated film of nickel and gold or copper and gold is formed.

  The anisotropic conductive member 211 is an electrical connection member having elasticity, has electrical conduction in the vertical direction, and is insulated in the horizontal direction. The seal rings of the first seal ring 161 and the second seal ring 171 have diameters that can be respectively placed on the upper and lower surfaces of the partition step 301 of the contactor frame 181 and are made of, for example, silicon rubber or Viton.

Next, the solid-state imaging device wafer 21 to be inspected using the contactor 241 having the above constituent members will be described.
The solid-state image pickup device wafer 21 that is the object of the inspection method of the present embodiment has a plurality of solid-state image pickup devices 11 in a region within the wafer. The solid-state imaging device 11 has a transparent member 151 bonded to the main surface side, and the transparent member 151 is disposed so as to cover the imaging region 41. In the solid-state imaging device 11, external connection electrodes 131 are joined to a plurality of lands 121 formed on the back surface side, and the lands 121 are electrically connected to the conductor pattern 91 on the main surface side. The solid-state imaging device 11 will be described in detail later with reference to FIGS.

  The solid-state imaging device wafer 21 is loaded on the upper surface of the partition step 301 so as to cover the first seal ring 161 and mounted on the contactor 241. A flexible substrate 191 is disposed on the lower surface of the partition step 301 so as to cover the second seal ring 171, and the flexible substrate 191 is fixed to the contactor frame 181 via the sheet frame 221, Is provided with an anisotropic conductive member 211.

  Then, by decompressing the space surrounded by the inner wall of the contactor frame 181, the solid-state imaging device wafer 21 and the flexible substrate 191, the solid-state imaging device wafer 21 is fixed to the upper surface of the step of the partition step 301 and the sheet frame is attached to the lower surface of the step. 221 can be fixed, and the external connection electrode 131 and the anisotropic conductive member 211 can be pressed.

  The flexible substrate 191 has, on one surface, a conductive terminal 201 disposed at a position corresponding to the external connection electrode 131 of the solid-state imaging device wafer 21, a connection terminal (not shown) connected to the connection system, a connection terminal, Conductive wiring (not shown) for connecting the conductive terminal 201 is provided. The electrical connection between the conductive terminal 201 of the flexible substrate 191 and the anisotropic conductive member 211 is performed by bonding one end face of the anisotropic conductive member 211 onto the conductive terminal 201 of the flexible substrate 191 with an anisotropic conductive adhesive. And do it.

  The steps of the inspection method according to the first embodiment will be described below. FIG. 2 is a cross-sectional view showing the inspection process of the solid-state imaging device according to the first embodiment. Each step of FIGS. 2A to 2E will be described below.

  What is shown in FIG. 2A is a step of preparing the solid-state imaging device wafer 21. The solid-state imaging device wafer 21 includes a plurality of solid-state imaging devices 11 on the main surface, a transparent member 151 covering the imaging region 41 is bonded to the main surface of each solid-state imaging device 11 with a transparent adhesive 141, and a through-hole is formed on the back surface. A plurality of external connection electrodes 131 connected to the conductor pattern 91 on the main surface are joined to each other through the through conductor 101 filled therein.

FIG. 2B shows a step of placing the solid-state imaging device wafer 21 on the contactor frame 181 of the contactor 241.
In this step, the first seal ring 161 is inserted into the cylindrical upper opening of the contactor frame 181 constituting the contactor 241, and the first seal ring 161 is placed on the upper surface of the partition step 301 of the contactor frame 181. The imaging device wafer 21 is placed. The solid-state imaging device wafer 21 is disposed so as to cover the entire first seal ring 161, with the main surface facing upward and the back surface having the external connection electrodes 131 facing downward.

  At this time, for example, the back surface of the solid-state imaging device wafer 21 may be directly stacked on the upper surface of the first seal ring 161 disposed in the partition step 301, or either the upper surface of the partition step 301 or the surface of the first seal ring 161. Alternatively, a solid-state image pickup device wafer 21 may be mounted after forming a low vapor pressure sealing grease film on one or both of them.

  FIG. 2C shows a step of fitting and attaching the seat frame 221 to the contactor frame 181 of the contactor 241, the contact surface of the anisotropic conductive member 211 and the external connection electrode of the solid-state imaging device wafer 21. 131 is brought into contact.

  In this step, the second seal ring 171 is placed at a predetermined position on the upper surface of the flexible substrate 191, and the flexible frame 191 and the sheet frame 221 fixed to the lower surface thereof while maintaining airtightness are opened below the cylindrical shape of the contactor frame 181. The conductive terminal 201 and the anisotropic conductive member 211 provided on the upper surface of the flexible substrate 191 are opposed to the back surface of the solid-state imaging device wafer 21.

  Next, the X direction, the Y direction, and the θ direction of the sheet frame 221 are adjusted so that the external connection electrode 131 of the solid-state imaging device wafer 21 and the anisotropic conductive member 211 of the flexible substrate 191 coincide with each other. The frame 221 is disposed with respect to the contactor frame 181, and the sheet frame 221 and the flexible substrate 191 are raised to a position where the upper surface of the second seal ring 171 contacts the lower surface of the partition step 301 of the contactor frame 181 to raise the wafer of the solid-state imaging device The external connection electrode 131 and the anisotropic conductive member 211 are brought into contact with each other.

  At this time, for example, the second seal ring 171 may be brought into direct contact with the lower surface of the partition step 301 of the contactor frame 181, or on one or both of the lower surface of the partition step 301 and the surface of the second seal ring 171. The second seal ring 171 may be brought into contact with the lower surface of the partition step 301 after forming the low vapor pressure sealing grease film.

FIG. 2D shows a step in which the contact surface between the external connection electrode 131 of the solid-state imaging device wafer 21 and the anisotropic conductive member 211 is pressed.
In this step, the air in the space surrounded by the back surface of the solid-state imaging device wafer 21 and the upper surface of the flexible substrate 191 inside the contactor frame 181 is exhausted from the decompression port 231 of the contactor frame 181 by a vacuum pump or the like. By depressurizing the inside, each external connection electrode 131 of the solid-state imaging device wafer 21 and the anisotropic conductive member 211 of the flexible substrate 191 corresponding thereto are pressed.

  The decompression system uses a vacuum pump such as a mechanical pump or an oil pump, but a mechanical pump is preferable in consideration of vaporization of oil mist and oil. Further, in addition to the pressure reducing system described above, more reliable pressure contact may be realized by putting the contactor 241 and the entire solid-state imaging device wafer 21 mounted on the contactor 241 into a pressure device (not shown). Then, more reliable pressure contact may be realized by applying mechanical pressure from either one or both of the upper surface of the solid-state imaging device wafer 21 and the lower surface of the flexible substrate 191.

What is shown in FIG. 2E is a step of measuring the solid-state imaging device 11 while irradiating the inspection light from above the solid-state imaging device wafer 21 mounted on the contactor 241.
In this step, the inspection light is irradiated from the main surface side of the solid-state imaging device wafer 21 in a state where the external connection electrode 131 of the solid-state imaging device wafer 21 and the anisotropic conductive member 211 on the upper surface of the flexible substrate 191 are pressed. The optical and electrical characteristics of the solid-state imaging device 11 are measured in the wafer state.

In the inspection of flare and smear, the entire surface of the solid-state imaging device wafer 21 may be irradiated with inspection light and simultaneously measured.
Moreover, you may irradiate and measure only to a target location. By adopting such an inspection method, the inspection light source can be made small, so that a cheaper inspection apparatus can be realized.

  Furthermore, you may measure, changing the light quantity of the test | inspection light irradiated to the main surface of the solid-state imaging device 11 stepwise with time. By using such an inspection method, it is possible to efficiently inspect electrical characteristics.

  In the inspection method of the solid-state imaging device wafer 21 as described above, since no inspection needle is used during the inspection, it is possible to prevent the surface of the external connection electrode 131 of the solid-state imaging device 11 from being scratched or deformed and to cause an appearance defect due to the inspection. Since the generation can be suppressed, the appearance yield after inspection can be improved.

  In addition, since a plurality of solid-state imaging devices 11 can be simultaneously measured in the wafer state, the inspection time can be shortened and the inspection cost can be reduced. Furthermore, since the solid-state imaging device 11 according to the present embodiment does not include an envelope and the transparent member 151 is directly bonded, it can be reduced in size and thickness and can be inspected at a low cost.

Next, a solid-state imaging device used in the inspection method according to the first embodiment of the present invention will be described with reference to FIG. 3A is a schematic perspective view, and FIG. 3B is a cross-sectional view taken along the line AA in FIG.
The solid-state imaging device 11 according to the present embodiment includes an imaging region 41 having a plurality of rows of microlenses 51 in the center of the main surface, a peripheral circuit region around the imaging region 41, and a plurality of conductors in the peripheral portion of the main surface. A conductor pattern region having a pattern 91; a plurality of lands 121 arranged in the periphery of the back surface where the back surface insulating film 71 is formed; and a through conductor 101 that electrically connects each land 121 to the conductor pattern 91 on the main surface side It has.

  The through conductor 101 is filled in a through hole in which the inner wall insulating film 81 is formed, and is made of, for example, a single metal or a compound such as copper, nickel, tungsten, molybdenum, titanium, and molybdenum. The through conductor 101 is insulated from the silicon substrate 291 by the inner wall insulating film 81, and the upper end is connected to the conductor pattern 91 on the main surface and the lower end is connected to the land 121 on the back surface.

  Further, in the solid-state imaging device 11, a rectangular transparent transparent member 151 having a size including the imaging region 41 and a part of the periphery of the imaging region 41 is connected to the microlens 51 on the main surface side using a transparent adhesive 141. . The transparent member 151 may be, for example, hard glass, quartz, or transparent alumina, or may use a transparent resin such as an epoxy resin, an acrylic resin, or a polyimide resin. As the transparent adhesive 141, for example, a thermosetting resin or an ultraviolet curable resin is used. However, the transparent adhesive 141 has a lower refractive index than the material of the microlens 51 and is in a liquid or semi-cured state.

  External connection electrodes 131 are formed on the plurality of lands 121 on the back surface side of the solid-state imaging device 11. The external connection electrode 131 may be a solder ball, or may be a bump whose surface is plated with a thin film of copper and gold by electrolytic copper plating or electroless copper plating. Furthermore, a stud bump formed by a wire bonding method may be used.

  As described above, unlike the conventional solid-state imaging device, the solid-state imaging device 11 does not require a thin metal wire, and thus is not affected by optical noise due to reflection from the thin metal wire. Further, the solid-state imaging device 11 can be reduced in size and thickness, and can be inspected at low cost.

  Next, another example of the solid-state imaging device wafer used in the inspection method according to the first embodiment of the present invention will be described with reference to FIG. 4A is a schematic perspective view, FIG. 4B is a schematic plan view, and FIG. 4C is a cross-sectional view taken along the line B-B in FIG.

  The solid-state imaging device wafer 21 has a plurality of solid-state imaging devices 11 arranged vertically and horizontally in contact with each other on the main surface of a wafer made of a silicon substrate. The solid-state imaging device 11 is disposed in the central portion on the main surface side and includes an imaging region 41 having a microlens 51, and is disposed on the outer periphery of the imaging region 41 to transfer an electrical signal from the imaging region 41 to an external circuit. A plurality of conductor patterns 91 arranged on the outermost periphery, a plurality of conductor patterns 91 arranged on the outermost periphery for taking out electric signals of each wiring to an external circuit, and a plurality of conductor patterns arranged on the peripheral portion of the back surface on which the back surface insulating film 71 is formed. A land 121 and a through conductor 101 that fills the through hole in which the inner wall insulating film 81 is formed and electrically connects each land 121 to the conductor pattern 91 on the main surface side are provided.

  The conductor pattern 91 on the main surface and the land 121 on the back surface may be connected as follows. For example, the conductor pattern 91 and the land 121 are arranged at positions where the main surface and the back surface of the silicon substrate 291 are completely opposed to each other, and both the conductor pattern 91 and the land 121 are directly connected by the through conductor 101 in the through hole. May be. Alternatively, the conductor pattern 91 and the land 121 are arranged at offset positions on the main surface and the back surface of the silicon substrate 291, and the through conductor 101 and the conductor pattern 91 formed from immediately above the land 121 to the main surface of the silicon substrate 291. They may be connected with a wiring pattern. Furthermore, the conductor pattern 91 and the land 121 may be disposed at offset positions on the main surface and the back surface of the silicon substrate 291, and the land 121 and the conductor pattern 91 may be connected to the through conductor 101 with a wiring pattern.

  In the present embodiment, the solid-state imaging device wafer 21 is subjected to simple electrical characteristic inspection as a primary inspection in the state of the solid-state imaging device wafer stage before connecting the transparent member 151 and the external connection electrode 131, and is assembled. Sometimes it is possible to identify an acceptable semiconductor imaging device in a state already classified into an acceptable product and an unacceptable product.

  Therefore, the transparent member 151 is bonded with the transparent adhesive 141 on the microlens 51 on the main surface side of the semiconductor imaging device that has passed the electrical characteristic inspection, and the external connection electrodes 131 are formed on the plurality of lands 121 on the back surface side. The solid-state image pickup device wafer 21 is formed by assembling only the semiconductor image pickup device that passed the inspection as the solid-state image pickup device 11.

By inspecting the above-described solid-state imaging device wafer 21 by the inspection method of the present embodiment, the solid-state imaging device 11 to be inspected is transparent to the solid-state imaging device that has passed the electrical characteristic inspection in the primary inspection at the solid-state imaging device wafer stage. Since only the member 151 and the external connection electrode 131 are formed, the transparent member 151 and the external connection electrode 131 are not wasted, and a plurality of solid-state imaging devices 11 can be inspected at the same time. Reduction and lead time can be shortened by shortening the inspection time, inventory management can be simplified, and the solid-state imaging device 11 can be reduced in thickness and size, thereby enabling inspection at low cost.
(Second Embodiment)
FIG. 5 shows an inspection method for a solid-state imaging device according to the second embodiment of the present invention. The inspection method of the present embodiment is characterized by using a lattice-shaped light shielding member 252 as shown in FIG. 6A is a schematic perspective view of the lattice-shaped light shielding member 252, and FIG. 6B is a cross-sectional view taken along the line CC of FIG. 6A.

  First, the configuration of the grid-like light shielding member 252 shown in FIG. 6 will be described. The lattice-shaped light shielding member 252 has a lattice shape on the entire plane, and a plurality of partition plates 262 arranged in the vertical and horizontal directions are arranged at equal intervals. The interval between the center lines of the vertical and horizontal partition plates 262 is as shown in FIG. The length of the main surface of the solid-state imaging device 12 shown in FIG.

  The upper surface opening of each lattice of the lattice-shaped light shielding member 252 has a size equal to or larger than the imaging region 42 of the main surface of the solid-state imaging device 12, and the lower surface opening is larger than the upper opening in both length and width. . 6A, the space shape surrounded by the upper and lower surfaces of each lattice and the side walls on both sides forms a trapezoid, and the height of the partition plate 262 is the transparent member 152 of the solid-state imaging device 12. The height from the top surface to the main surface of the solid-state imaging device 12 is higher.

  The lattice-shaped light shielding member 252 is a member in which a side surface of the lattice partition plate 262 has a rough surface and is blended with a material capable of blocking light such as a black pigment or pigment, and the material may be a resin. However, it may be an inorganic material such as ceramic, glass or metal. As shown in FIG. 6A, the external planar shape of the lattice-shaped light shielding member 252 may be a rectangle, or may be a circle that can be fitted into the contactor frame.

  Next, a method for inspecting using the light shielding member 252 will be described below. FIG. 5 is a diagram illustrating an inspection method for a solid-state imaging device according to an embodiment of the present invention. The contactor 242 includes a contactor frame 182, a seat frame 222, a flexible substrate 192, an anisotropic conductive member 212, a first seal ring 162, a second seal ring 172, and a decompression system.

  The contactor frame 182 has a cylindrical outer shape, and a partition step 302 is formed on the inner wall surface. The partition step 302 includes an opening having a diameter equal to or larger than the effective pattern area of the solid-state imaging device wafer 22. Yes.

  The depth of the cylindrical upper opening above the partition step 302 in the contactor frame 182 is preferably equal to or greater than the height from the lowermost surface of the external connection electrode 132 of the solid-state imaging device wafer 22 to the upper surface of the transparent member 152. .

  The diameter of the cylindrical upper opening is formed to be larger than the diameter of the solid-state imaging device wafer 22 to be inspected by a predetermined value, and the predetermined value is in the range of 0.5 mm to 2 mm, preferably 1 mm. The diameter of the cylindrical lower opening below the partition step 302 may be, for example, equal to or larger than the diameter of the cylindrical upper opening. Further, a hole is formed in the opening side surface of the partition step 302, and this hole is connected to the decompression port 232 on the outer side surface of the contactor frame 182. For the contactor frame 182, for example, resin, cast iron, aluminum or the like can be used, and the inner wall surface of the cylindrical upper opening or the cylindrical lower opening may be coated with a Teflon (registered trademark) resin.

  The seat frame 222 has an annular shape, and the outer diameter is smaller than the diameter of the cylindrical lower opening by a predetermined value, and the predetermined value is in the range of 0.5 mm to 3 mm, preferably 0.5 mm. An opening having a diameter equal to or larger than the effective pattern area of the solid-state imaging device wafer 22 is formed at the center of the sheet frame 222. The seat frame 222 may be made of, for example, resin, cast iron, aluminum, or the like.

  The flexible substrate 192 has a disk shape, is equal to or larger than the outer diameter of the seat frame 222, and has a thickness in the range of 0.05 mm to 1.5 mm, preferably 1.0 mm. For example, it consists of a polyimide resin, a polyamide resin, or the like.

  A pattern of conductive terminals 202 is formed on the upper surface of the flexible substrate 192, and the conductive terminals 202 are formed at positions corresponding to the plurality of external connection electrodes 132 of the solid-state imaging device wafer 22. The conductive terminal 202 is preferably formed by laminating a chemically stable good conductor foil or a plating layer coating on the surface. For example, the conductive terminal 202 is formed by using both electrolytic plating and electroless plating, and then etched into a predetermined pattern. Thus, a laminated film of nickel and gold or copper and gold can be used.

The anisotropic conductive member 212 is an electrical connection member having electrical conduction in the vertical direction, insulated in the horizontal direction, and having elasticity.
The first seal ring 162 and the second seal ring 172 have diameters that can be respectively placed on the upper and lower surfaces of the partition step 302 of the contactor frame 182 and are made of, for example, silicon rubber or Viton.

  The solid-state image pickup device wafer 22 has a plurality of solid-state image pickup devices 12 in the wafer region. The solid-state image pickup device 12 has a transparent member 152 bonded to the main surface side so as to cover the image pickup region 42, and a plurality of solid-state image pickup devices 12 on the back surface side. The land 122 and the external connection electrode 132 joined to each land 122 are provided, and each land 122 is electrically connected to the conductor pattern 92 on the main surface side. Note that the detailed description of the solid-state imaging device 12 is the same as that described in FIGS. 3 and 4 of the first embodiment, and a detailed description thereof will be omitted.

  The solid-state imaging device wafer 22 according to the present embodiment is loaded so as to cover the first seal ring 162 placed on the upper surface of the partition step 302 of the contactor frame 182, and the second seal ring is mounted on the lower surface of the partition step 302. A flexible substrate 192 is disposed so as to cover 172, and the flexible substrate 192 includes an anisotropic conductive member 212 on the conductive terminal 202, and the sheet frame 222 is fixed to the flexible substrate 192.

  With this configuration, the space between the solid-state imaging device wafer 22 surrounded by the contactor frame 182 and the flexible substrate 192 is decompressed, so that the solid-state imaging device wafer 22 is fixed to the upper surface of the step of the contactor frame 182 and the lower surface of the step is lowered. The sheet frame 222 is fixed, and the external connection electrode 132 and the anisotropic conductive member 212 can be pressed.

  The grid-shaped light shielding member 252 is placed on the main surface of the solid-state imaging device wafer 22, and the center line of the partition plate 262 of the grid-shaped light shielding member 252 on the boundary line between the adjacent solid-state imaging devices 12 of the solid-state imaging device wafer 22. Adjust. The inspection light is irradiated from above the lattice-shaped light shielding member 252.

  The flexible substrate 192 has a conductive terminal 202, a connection terminal connected to the connection system, and a conductor wiring connecting the connection terminal and the conductive terminal 202 on one surface. The conductive terminal 202 is connected to the solid-state imaging device wafer 22. It is arranged at a position corresponding to the external connection electrode 132. The conductive terminal 202 of the flexible substrate 192 and the anisotropic conductive member 212 are electrically connected by adhering one end face of the anisotropic conductive member 212 to the conductive terminal 202 of the flexible substrate 192 with an anisotropic conductive adhesive. To do.

  Next, a method for inspecting the solid-state imaging device wafer 22 according to the present embodiment will be described below. In the inspection method of the present embodiment, the step of preparing the solid-state imaging device wafer 22 and the solid-state imaging device wafer 22 are placed on the partition step 302 from above the contactor frame 182 of the contactor 242 via the first seal ring 162. Step, the second seal ring 172 is placed on the flexible substrate 192 to which the seat frame 222 is fixed, the flexible substrate 192 is inserted from below the contactor frame 222 of the contactor 242, and the conductive terminal 202 and the solid-state imaging A step of aligning the external connection electrode 132 of the device wafer 22, a step of bringing the anisotropic conductive member 212 and the external connection electrode 132 of the solid-state imaging device wafer 22 into contact, and exhausting and depressurizing the inside of the contactor frame 182. The anisotropic conductive member 212 and the external connection electrode 132 are pressed against each other. A step of disposing a lattice-shaped light shielding member 252 at a predetermined position above the solid-state imaging device wafer 22, and irradiating a predetermined amount of inspection light from above the lattice-shaped light shielding member 252 on the solid-state imaging device wafer 22. And a step of measuring the optical and electrical characteristics of the solid-state imaging device 12 while irradiating the inspection light.

  The grid-shaped light shielding member 252 may be placed directly on the upper surface of the contactor frame 182 or the main surface of the solid-state imaging device wafer 22, or is supported and fixed by a support device in the space between the inspection light source and the main surface of the solid-state imaging device wafer 22. Alternatively, it may be attached to the casing of the inspection light source.

When the solid-state imaging device wafer 22 is inspected by using the lattice-shaped light shielding member 252 described above, when measurement is performed while irradiating the solid-state imaging device 12 with inspection light, flare and smear due to stray light or reflected light during measurement are eliminated. This can be prevented and the inspection yield is improved. Further, similarly to the previous embodiment, the solid-state imaging device 12 can be reduced in size and thickness, and the inspection needle is not used at the time of inspection, so that the external connection electrode 132 of the solid-state imaging device 12 is prevented from being scratched or deformed. This improves the appearance yield after inspection. Furthermore, since a plurality of solid-state imaging devices 12 can be measured simultaneously in the wafer state, the inspection time can be shortened and the process cost can be reduced.
(Third embodiment)
FIG. 7 is a diagram for explaining the inspection method for the solid-state imaging device according to the third embodiment of the present invention.

  In the inspection method of the present embodiment, measurement is performed with the solid-state imaging device wafer 23 mounted on the contactor frame 183 of the contactor 243, the mounting side of the solid-state imaging device wafer 23 facing down, and the sheet frame 223 side facing up. I do. For this reason, the inspection light source is disposed below the contactor 243 and irradiates the inspection light toward the main surface of the upper solid-state imaging device wafer 23.

  In this method, as described above, the inspection system may be such that the main surface of the solid-state imaging device wafer 23 is at the bottom, or the contactor 243 and the inspection light source are integrated, and the contactor 243 is solid-state imaged. When attaching or detaching the apparatus wafer 23, the contactor 243 is rotated by 180 ° so that the main surface of the solid-state image pickup device wafer 23 is up, and during measurement, the main surface of the solid-state image pickup device wafer 23 is down. You may return to and measure.

  Further, the solid-state imaging device wafer 23 used in the inspection of the present embodiment, the contactor frame 183 and the sheet frame 223 constituting the contactor 243 are the same as those in the first embodiment and the second embodiment. Detailed description here is omitted.

By using the inspection system including the contactor 243 and the inspection light source as described above, it is possible to prevent dust from adhering to the imaging region during the inspection, so that the inspection speed and the inspection yield can be improved.
(Fourth embodiment)
FIG. 8 is a block diagram showing a configuration of a solid-state imaging device wafer inspection apparatus according to the fourth embodiment of the present invention.

  The inspection apparatus for the solid-state imaging device wafer 23 of the present embodiment can be used in any of the first to third embodiments of the present invention, and is hereinafter referred to as a wafer inspection apparatus.

  The configuration of the wafer inspection apparatus includes a tester 274 having signal generation, calculation, control, comparison, and input / output functions, and a contactor 244 for making electrical contact with all external connection electrodes in the solid-state imaging device wafer. A connection system 284 composed of a plurality of cables that electrically connect the tester 274 and the contactor 244, and a light source 114 for irradiating the plurality of solid-state imaging devices mounted on the contactor 244 with inspection light. It is configured.

  The contactor 244 corresponds to that previously described in the first to third embodiments, and the tester 274 applied to this apparatus is a simultaneous function in addition to the general-purpose function capable of inspecting the solid-state imaging device. The contactor 244 is connected to a cable that connects an external terminal on the flexible board to the tester 274. As the light source 114 for irradiating the inspection light onto the solid-state imaging device wafer, a light source such as an incandescent light bulb or electroluminescence may be used.

  With the above-described configuration of the solid-state imaging device wafer inspection device, the solid-state imaging device wafer can be measured accurately and efficiently, and a thin and small-sized solid-state imaging device can be provided at low cost.

  The present invention adopts a probeless simultaneous multiple inspection method using a contactor, and is configured to perform direct attachment of a transparent member and use or addition of each light shielding member only for a solid-state imaging device that has passed in preliminary inspection. Since a high-performance, small and thin solid-state imaging device can be obtained, it is useful for application to small and thin electronic devices.

Sectional drawing which shows the inspection method of the solid-state imaging device concerning the 1st Embodiment of this invention Sectional drawing of the test process of the solid-state imaging device concerning the 1st Embodiment of this invention (A) is a schematic perspective view which shows the solid-state imaging device used for the inspection method of the 1st Embodiment of this invention, (b) is AA arrow sectional drawing of (a). (A) is a schematic perspective view of the solid-state imaging device wafer used for the inspection method of the first embodiment of the present invention, (b) is a schematic plan view, and (c) is a cross-sectional view taken along line BB in (b). Sectional drawing which shows the inspection method concerning the 2nd Embodiment of this invention (A) is a schematic perspective view of the grid | lattice-like light shielding member used for the inspection method of the 2nd Embodiment of this invention, (b) is CC sectional view taken on the line of (a). Sectional drawing which shows the inspection method concerning the 3rd Embodiment of this invention FIG. 6 is a block diagram showing a solid-state imaging device wafer inspection apparatus according to a fourth embodiment of the present invention;

Explanation of symbols

DESCRIPTION OF SYMBOLS 11,12 Solid-state imaging device 21,22,23 Solid-state imaging device wafer 41,42 Imaging area 51 Micro lens 71 Back surface insulating film 81 Inner wall insulating film 91,92 Conductor pattern 101 Through-conductor 114 Light source 121 Land 131,132 External connection electrode 141 Transparent adhesive 151,152 Transparent member 161,162 First seal ring 171,172 Second seal ring 181,182,183 Contactor frame 191,192 Flexible substrate (base material)
201, 202 Conductive terminal 211, 212 Anisotropic conductive member 221, 222, 223 Seat frame 231, 232 Pressure reducing port 241, 242, 243, 244 Contactor 252 Grid-shaped light shielding member 262 Partition plate 274 Tester 284 Connection system 291 Silicon substrate 301,302 Dividing step

Claims (9)

Inspection of a semiconductor wafer having a plurality of solid-state imaging devices, having an imaging region of each of the solid-state imaging devices on the main surface side, and each having a plurality of external connection electrodes of the solid-state imaging device on the back surface side Which performs
Electrically connecting each external connection electrode of the solid-state imaging device to a terminal portion of the contactor; and optical or electrical of the solid-state imaging device while irradiating predetermined inspection light from the main surface side of the semiconductor wafer And a step of measuring the physical characteristics simultaneously or sequentially. The contactor includes a flexible substrate having a terminal portion formed of a conductive terminal formed at a predetermined plurality of locations and an anisotropic conductive member disposed on the conductive terminal;
The inspection method for a solid-state imaging device according to claim 1, further comprising a sheet frame fixed to the flexible substrate. The space of the contactor formed between the back surface of the semiconductor wafer is decompressed, and the external connection electrode of the solid-state image pickup device and the terminal portion of the contactor are brought into pressure contact with each other. 2. A method for inspecting a solid-state imaging device according to 1. A lattice-shaped light shielding member having an opening larger than the size of the imaging region at a position corresponding to the imaging region of each of the solid-state imaging devices formed on the semiconductor wafer, the inspection light source and the semiconductor wafer on the semiconductor wafer 4. The method for inspecting a solid-state imaging device according to claim 1, wherein the inspection is performed by arranging between the two. 5. The inspection method for a solid-state imaging device according to claim 1, wherein the inspection is performed while supporting the contactor so that the semiconductor wafer is positioned on a lower side. The solid-state imaging device inspection method according to claim 1, wherein the measurement is performed while changing the amount of the inspection light stepwise. The solid-state imaging device inspection method according to claim 1, wherein the measurement is performed while irradiating the entire surface of the main surface of the semiconductor wafer with the inspection light. The solid-state imaging according to claim 1, wherein the measurement is performed while irradiating the inspection light onto a part of a main surface of the semiconductor wafer including the solid-state imaging device to be inspected. Device inspection method. Inspection of a semiconductor wafer having a plurality of solid-state imaging devices, having an imaging region of each of the solid-state imaging devices on the main surface side, and each having a plurality of external connection electrodes of the solid-state imaging device on the back surface side Which performs
A contactor including a flexible wiring substrate having a terminal portion that is mounted on the semiconductor wafer to form a contactor unit and press-contacts to an external connection electrode on the back surface of the semiconductor wafer; and the solid-state imaging device on the main surface of the semiconductor wafer. An inspection light source for irradiating inspection light, a tester for determining the generation of electric signals and measurement results, and a connection system for transmitting generated signals and electric signals of measurement results between the contactor unit and the tester An inspection apparatus for a solid-state imaging device.

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