JP2008166607A5

JP2008166607A5 -

Info

Publication number: JP2008166607A5
Application number: JP2006356419A
Authority: JP
Filing date: 2006-12-28
Publication date: 2010-01-21

Claims

A solid-state imaging device in which unit pixels including a photoelectric conversion element and a plurality of pixel transistors are arranged,
A solid-state imaging device, wherein a semiconductor material portion of a required conductivity type is formed at least partially on a side wall of a gate electrode of the required pixel transistor among the pixel transistors via an insulating film.

A solid-state imaging device in which unit pixels including a photoelectric conversion element and a readout transistor for reading out a charge obtained by photoelectric conversion with the photoelectric conversion element to a floating diffusion portion are arranged,
The solid-state imaging device, wherein the gate electrode of the read transistor has a first conductivity type impurity introduced into the photoelectric conversion element side and a second conductivity type impurity introduced into the floating diffusion portion side.

The solid-state imaging device according to claim 2, wherein a semiconductor material portion into which a first conductivity type impurity is introduced is formed on the photoelectric conversion element side of the gate electrode through an insulating film.

The solid-state imaging device according to claim 3, wherein a semiconductor material portion into which a second conductivity type impurity is introduced is formed on the floating diffusion portion side of the gate electrode through an insulating film.

The solid-state imaging device according to claim 2, wherein the gate voltage is applied to a first conductivity type region of the gate electrode on the photoelectric conversion element side.

The solid-state imaging device according to claim 2, wherein the gate voltage is applied to a second conductivity type region on the floating diffusion portion side of the gate electrode.

A solid-state imaging device in which unit pixels including a photoelectric conversion element and a readout transistor for reading out a charge obtained by photoelectric conversion with the photoelectric conversion element to a floating diffusion portion are arranged,
The gate electrode of the read transistor is formed by introducing a first conductivity type impurity or a second conductivity type impurity,
A solid-state imaging device, wherein a semiconductor material portion into which a first conductivity type or a second conductivity type impurity is introduced is formed on the photoelectric conversion element side of the gate electrode through an insulating film.

8. The solid-state imaging device according to claim 7, wherein a semiconductor material part into which a second conductivity type impurity is introduced is formed on the floating diffusion part side of the gate electrode through an insulating film.

A solid-state imaging device in which unit pixels including a photoelectric conversion element and an amplification transistor that amplifies and outputs a signal corresponding to a charge obtained by photoelectric conversion by the photoelectric conversion element are arranged,
A channel region under the gate electrode of the amplification transistor is formed by a buried channel, and a semiconductor material portion into which a first conductivity type impurity is introduced via an insulating film is formed on a side wall of the gate electrode. Solid-state imaging device.

The solid-state imaging device according to claim 9, wherein a first conductivity type impurity or a second conductivity type impurity is introduced into the gate electrode.

Of the pixel transistors that constitute the unit pixel together with the photoelectric conversion element, a semiconductor material portion of a required conductivity type is formed on at least a region of the gate electrode of the reset transistor that is electrically connected to the floating diffusion portion. A solid-state imaging device.

A solid-state imaging device, wherein an impurity diffusion region of a reading transistor and / or an amplifying transistor that constitutes a unit pixel together with a photoelectric conversion element is formed with an extension part extending partly below a gate electrode.

Of the pixel transistors constituting the unit pixel together with the photoelectric conversion element, when forming the required pixel transistor,
Forming a gate electrode on a semiconductor substrate via a gate insulating film;
A method of manufacturing a solid-state imaging device, comprising: forming a semiconductor material layer including an insulating film on the semiconductor substrate including the gate electrode.

The method for manufacturing a solid-state imaging device according to claim 13, further comprising a step of etching back the semiconductor material layer to form a semiconductor material portion on a side wall side of the gate electrode.

The method for manufacturing a solid-state imaging device according to claim 13, further comprising a step of introducing an impurity of a required conductivity type from an oblique direction toward the side wall of the gate electrode into the semiconductor material layer.

16. The method of manufacturing a solid-state imaging device according to claim 15, further comprising a step of performing an annealing process before or after introducing the impurity of the required conductivity type and etching back the semiconductor material layer.

Among pixel transistors that constitute a unit pixel together with a photoelectric conversion element, when forming a readout transistor or / and an amplification transistor having an impurity diffusion region and a gate electrode,
A method for manufacturing a solid-state imaging device, comprising the step of obliquely ion implanting a required conductivity type impurity to form the impurity diffusion region having an extension portion partially extended under the gate electrode.

Having an amplification transistor,
A channel region under the gate electrode of the amplification transistor is formed by a buried channel;
A semiconductor device in which a required conductivity type is introduced through an insulating film on a side wall of the gate electrode.

When forming an amplification transistor,
Forming a gate electrode on a semiconductor substrate via a gate insulating film;
A method of manufacturing a semiconductor device, comprising: forming a semiconductor material layer including an insulating film on the semiconductor substrate including the gate electrode.

In forming an amplifying transistor having an impurity diffusion region and a gate insulating film,
A method of manufacturing a semiconductor device, comprising the step of obliquely ion implanting a required conductivity type impurity to form the impurity diffusion region having an extension part partially extended under the gate electrode.