JP2008160163A5 - - Google Patents

Claims (6)

(A) First and second main surfaces including MISFETs located on opposite sides, the drain electrode of the MISFET formed on the first main surface, and formed on the second main surface A semiconductor chip having a gate electrode and a source electrode of the MISFET;
(B) A resin sealing body that seals the semiconductor chip, and has an upper surface, a lower surface, and four side surfaces that intersect the upper surface and the lower surface, and the upper surface is on the first main surface side of the semiconductor chip. A resin sealing body that is located and the lower surface is located on the second main surface side of the semiconductor chip;
(C) a drain lead electrically connected to the drain electrode;
(D) a gate lead electrically connected to the gate electrode;
(E) having a source lead electrically connected to the source electrode;
(F) The drain lead includes a first portion, a second portion, and a third portion, the first portion is located on the drain electrode, and the third portion is formed of the resin sealing body. Located below the second main surface, the second portion connects the first portion and the third portion, and the first portion is partially exposed from the upper surface of the resin sealing body. A part of the third portion is exposed from the lower surface of the resin sealing body and the first side surface of the four side surfaces;
(G) The gate lead is located below the gate electrode, and a part is exposed from the lower surface of the resin sealing body,
(H) The source lead is located under the source electrode, and a part is exposed from the lower surface of the resin sealing body,
(I) The semiconductor device, wherein the third portion of the drain lead, the gate lead, and the source lead exposed from the lower surface of the resin sealing body are in the same plane. 2. The semiconductor device according to claim 1, wherein the drain lead is connected to the drain electrode by a conductive adhesive. 2. The semiconductor device according to claim 1, wherein the gate lead and the source lead are connected to the gate electrode and the source electrode by a protruding electrode, respectively. 4. The semiconductor device according to claim 3, wherein the protruding electrode is made of gold. 2. The semiconductor device according to claim 1, wherein the drain lead, the gate lead, and the source lead are made of copper. 2. The semiconductor device according to claim 1, wherein the second portion of the drain lead is located inside the resin sealing body and is not exposed from the first side surface.