JP2008153313A - Optical device and its manufacturing method and camera module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin, small and high-reliability solid-state imaging device capable of greatly inhibiting the permeation of a moisture while using a resin base material. <P>SOLUTION: The device has the resin base material 12 forming a sensor loading region and lands 13 for connecting a sensor on one surface and forming the lands 14 for an external connection on the other surface and the semiconductor image sensor 21 loaded on the sensor loading region. The solid-state imaging device further has metal wires 22 electrically connecting electrode terminals 21a for the semiconductor image sensor and the lands 13 for connecting the sensor, a frame-shaped rib 17 formed on one surface of the resin base material 12 and a transparent cover plate 24 attached on the frame-shaped rib 17. A first organic film 15 formed on one surface of the resin base material 12 and a second organic film 16 formed on the other surface thereof. The first organic film 15 and the second organic film 16 consist of a solder resist, the content of a filler for the first organic film 15 is higher than that for the second organic film 16 and is kept within a range of 50 to 90 wt.%. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an optical device apparatus, a manufacturing method thereof, and a camera module, and particularly relates to a technique related to moisture resistance of a semiconductor imaging device.

  Conventionally, a configuration mainly used in a solid-state image pickup device in which an optical device, particularly a semiconductor image pickup device (CCD, CMOS sensor) is mounted, has a semiconductor image pickup device mounted in a hollow area of the package and mounted by wire bonding. Thereafter, sealing is performed by covering with a transparent cover plate such as glass. The package that has been used in the solid-state imaging device having such a configuration has conventionally been a ceramic package in which a ceramic substrate is three-dimensionally processed.

  However, with the progress of miniaturization and thinning of mobile phones and digital cameras, there is an increasing demand for lower cost and thinner solid-state imaging devices, but it is difficult to cope with ceramic packages. Therefore, development of a package using a resin base material has been actively carried out.

  However, the resin package is less rigid than the conventional ceramic package, and not only is it easy to bend, but also moisture and the like permeate the resin base material. There is a problem that it is difficult to guarantee.

  For example, if moisture or the like penetrates into the region where the semiconductor image sensor is mounted, a defect such as a wire lead connecting the electrode terminal of the semiconductor image sensor and the element connection land of the resin base material is corroded and disconnected. There is a case. In addition, there is a problem that an image defect occurs when condensation or the like occurs on the surface of the image sensor formation region of the semiconductor image sensor or the surface of the transparent member.

  For this reason, when using a thermosetting resin mold package, thickening the bottom of the package has been performed as a method for improving moisture resistance. However, increasing the thickness of the bottom of the package in this manner increases the thickness of the solid-state imaging device, which is not preferable for applications such as mobile phones and digital cameras where there is a strong demand for thickness reduction.

  On the other hand, for example, Patent Document 1 proposes a method for improving moisture resistance without increasing the thickness of the solid-state imaging device while using a thermosetting resin package.

  This method of improving moisture resistance is to form a moisture permeation preventing layer on the bottom surface of the package of the solid-state imaging device, and as the moisture permeation preventing layer, a metal film, an alloy film, a metal oxide film, a metal silicide film, or Permeation of moisture is prevented by using a metal carbide film or the like.

As another method for improving moisture resistance, for example, Patent Document 2 proposes a configuration in which the entire outer peripheral surface of a thermosetting resin package is covered with a film having low moisture permeability.
In this case, the film having a low moisture permeability is formed by coating a polymer type film material with a thickness of 20 μm to 30 μm. By forming such a coating material, moisture can be prevented from entering the package.
JP-A-4-343457 Japanese Patent Laid-Open No. 10-74865

  In the above-described configuration, in the case where a single metal film, an alloy film, or a carbide film is formed on the bottom surface of the thermosetting resin package as a moisture permeation prevention film, the resin package is used in order to achieve a smaller size and thickness. It is difficult to realize a configuration in which a connecting member such as solder is provided on the bottom surface of the substrate and directly connected to the circuit board. That is, when the moisture permeation prevention film has conductivity such as a simple metal or an alloy, there is a problem that a short circuit occurs between connecting members such as solder on the bottom surface of the resin package. Further, when an insulating film such as a metal oxide film is used as the moisture permeation preventive film, it is difficult to reduce the cost because it is formed by a method such as sputtering.

  In the case where the entire outer peripheral surface of the thermosetting resin package is covered with a film having low moisture permeability, the film material formed on the outer peripheral surface of the resin package after the film formation is, for example, the handling process or circuit of the solid-state imaging device. There is a possibility of tearing or peeling due to contact or the like during handling when mounted on a substrate. Such factors that cause tearing and peeling of the film have a negative problem in securing long-term reliability.

  The present invention provides a thin, small, and highly reliable optical device device that can significantly suppress the transmission of moisture while using a resin substrate for a package in a solid-state imaging device or the like. The purpose is to do.

  In order to solve the above-described conventional problems, an optical device device of the present invention includes a flat resin substrate having an optical device mounting region on one surface, and an outer peripheral region on one surface of the resin substrate. A frame-like rib that is fixed and surrounds the element mounting area; an optical device that is mounted on the element mounting area; and a transparent lid plate that covers the optical device and adheres to the frame-shaped rib. The first organic film formed on one of the surfaces is made of a solder resist, and the filler content of the solder resist is in the range of 50 wt% to 90 wt%.

  By adopting such a configuration, even in an optical device device using a resin package in which a thin resin base material is used and a frame-shaped rib is fixed around the thin resin base material, moisture transmission from the resin package is suppressed. , And good flatness. In addition, by forming the first organic film inside, reliability does not decrease even if a phenomenon such as the surface of the optical device apparatus rubbing against other objects occurs. As a result, it is possible to realize a solid-state imaging device that is unlikely to cause mounting defects on a circuit board or the like and has excellent long-term reliability.

  Furthermore, by increasing the filler content of the first organic film, the heat conduction of the organic film is improved, and it is possible to dissipate heat generated from the semiconductor image sensor not only in the substrate thickness direction but also in the plane direction. It is possible to prevent deterioration of device characteristics due to high temperature.

  In addition, it is desirable that the filler content of the first organic coating is in the range of 50% by weight to 90% by weight. When it is more than%, the coating film hardness becomes too large, and cracks, peeling and the like are likely to occur.

  The resin base material has an optical device connection land on one surface and an external connection land on the other surface, and the electrode of the optical device and the optical device connection land are electrically connected. The optical device connection land is exposed at the opening of the first organic film formed on one surface of the resin base material, and the external connection land is on the other surface of the resin base material. Exposed in the opening of the second organic film formed on the first organic film, the first organic film and the second organic film are made of a solder resist, and the first organic film is formed on the second organic film. In comparison, the filler content is high, and the content is in the range of 50 wt% to 90 wt%.

By setting it as such a structure, the penetration | invasion of the water | moisture content to the space part in which the semiconductor image pick-up element is mounted can be suppressed more effectively.
In addition, the optical device includes a semiconductor imaging device and constitutes a solid-state imaging device.

  In addition, the first organic coating covers each outer peripheral region of the optical device connection land and is applied to at least an electrode pattern formed on the resin base material surface in a region surrounded by the frame-shaped rib. The portions overlap and are formed in a continuous pattern shape as a whole.

By setting it as such a structure, the penetration | invasion of the water | moisture content to the space part in which the semiconductor image pick-up element is mounted can be suppressed more effectively.
The frame-shaped rib is made of a resin material, and the first organic film is formed on an inner peripheral surface thereof.

  By adopting such a configuration, even when a frame-shaped rib made of a thin resin material is used, the permeation of moisture from the frame-shaped rib can be suppressed. Therefore, the width of the frame-like rib can be reduced, and a further compact optical device can be realized.

In addition, the fillers of the first organic coating and the second organic coating are made of different inorganic particles.
By setting it as such a structure, it can implement | achieve easily making content of the filler in a 1st organic film more than content of a filler in a 2nd organic film. Furthermore, since the linear expansion coefficient of the first organic film can be easily made smaller than the linear expansion coefficient of the second organic film, warpage as a resin package can be reduced even when a thin resin substrate is used. . As a result, poor solder connection to the circuit board can be greatly suppressed. As the different filler, for example, silica particles having a small linear expansion coefficient are used as the filler in the first organic film, and alumina particles having a larger linear expansion coefficient than the silica particles are used as the filler in the second organic film. it can.

  The resin base material has a multilayer wiring configuration in which an internal wiring layer is formed in an inner layer region, and the optical device connection land and the external connection land are formed in an inner layer region of the resin base material. Electrical connection is made through the layer and via conductor.

  With such a configuration, the resin package can be prevented from having a through conductor that penetrates from one surface to the other surface. The through conductor has a structure that allows moisture to easily pass through. However, since the resin base material is formed without providing the through conductor, the water content that passes through the resin base material can be further greatly suppressed.

  The resin base material may be one selected from glass epoxy resin, epoxy resin, bismaleimide-triazine resin (BT resin), acrylic butadiene styrene resin (ABS resin), polyimide resin, polyamide resin, and acrylic resin. It is characterized by becoming.

With such a configuration, a wiring pattern can be easily formed using a conventional resin wiring board manufacturing process.
The camera module of the present invention uses a solid-state imaging device in which the optical device in any one of the optical device devices described above is configured as a semiconductor imaging device.

By incorporating this camera module, a small, thin and highly reliable portable electronic device such as a mobile phone or a digital camera can be realized.
According to the method of manufacturing an optical device device of the present invention, an element mounting area on which a semiconductor imaging element is mounted and a plurality of element connection lands arranged around the element mounting area are arranged on one surface of a resin flat plate at a constant pitch And a plurality of external connection lands that are electrically connected to the element connection lands are formed on the other surface of the resin flat plate at the same arrangement pitch as the arrangement pitch. Including a filler on the surface of the resin flat plate corresponding to at least a region surrounded by a frame-shaped rib on one surface of the multi-sided substrate and covering each outer peripheral region of the element connection land Forming a first organic film having a continuous pattern shape using a solder resist having an amount in the range of 50% by weight to 90% by weight; and on the other surface of the multi-sided substrate A step of forming a second organic film having a lower filler content than the first organic film so that the external connection lands are exposed; and on one surface of the multi-sided substrate, A step of adhering a lattice-shaped frame-shaped portion so as to surround each of the element mounting regions in an outer peripheral region of the element connection land, and the multi-chamfered substrate and the Cutting the frame-shaped portion into pieces, mounting a semiconductor imaging device in the device mounting region, and connecting the electrode terminals of the semiconductor imaging device and the device connection lands with a thin metal wire; And a step of covering the semiconductor imaging device and the fine metal wires and bonding a transparent cover plate to the frame-shaped rib.

  By adopting such a method, the element connection land, the external connection land, the first organic coating, the second organic coating, and the fixing of the frame-shaped portion serving as the frame-shaped rib in the state of a large area flat plate, etc. After being performed, a plurality of resin packages can be collectively formed by cutting and dividing into individual pieces. The frame-shaped portion becomes a frame-shaped rib after being cut into individual pieces along the center line. Further, after the resin flat plate is cut and separated into pieces, it becomes a resin base material, and these constitute a resin package. Note that the step of dividing into pieces may be performed after the semiconductor imaging element is mounted in the element mounting region, connected by a thin metal wire, and further, the transparent cover plate is bonded.

  Further, the resin flat plate has a multilayer wiring configuration in which an internal wiring layer is formed in an inner layer region corresponding to the arrangement pitch, and the electrical connection between the element connection land and the external connection land is described above. It is characterized by using an internal wiring layer formed in the inner layer region of the resin flat plate and at least two via conductors electrically connected to the internal wiring layer and arranged at different positions.

  By adopting such a method, it is possible to prevent the resin package from having a through conductor that penetrates from one surface to the other surface. The through conductor has a structure that allows moisture to easily pass through. However, since the resin base material is formed without providing the through conductor, the water passing through the resin base material can be further greatly suppressed.

  ADVANTAGE OF THE INVENTION According to this invention, it can suppress significantly that a water | moisture content permeates into the space part which permeate | transmits a resin base material and is mounted with a semiconductor imaging device, using a thin resin base material. In addition, since the warpage as a solid-state imaging device can be reduced, the occurrence of defects in solder mounting on a circuit board or the like can be greatly suppressed. In addition, it is possible to dissipate the heat generated from the semiconductor image sensor not only in the substrate thickness direction but also in the plane direction, thereby preventing deterioration of the element characteristics due to high temperatures. As a result, there is a great effect that an optical device device that can be reduced in size and thickness, is highly reliable, and is inexpensive can be realized.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In these drawings, the thickness, length, etc. are displayed as different from the actual shape from the creation of the drawings. Also, the number of electrodes on the semiconductor image sensor, the number of element connection lands on the resin package, and the number of external connection lands are different from actual ones, and are easy to show. The example shown in this embodiment is a solid-state imaging device, but the same effect can be obtained when the present invention is applied to other optical device devices such as LEDs, photodiodes, and lasers.

  FIG. 1 is a schematic perspective view of a solid-state imaging device according to the present embodiment. 2A and 2B are diagrams illustrating the configuration of the solid-state imaging device, where FIG. 2A is a plan view and FIG. 2B is a cross-sectional view taken along the line 2A-2A in FIG. 3A and 3B are diagrams showing a configuration of a resin package used in the solid-state imaging device, wherein FIG. 3A is a plan view, and FIG. 3B is a cross-sectional view taken along 3A-3A in FIG.

  Hereinafter, the configuration of the solid-state imaging device according to the present embodiment will be described with reference to FIGS. 1 to 3. In the solid-state imaging device 10 according to the present embodiment, a resin package 11 includes a resin base 12 and a frame-shaped rib 17, and a semiconductor imaging element 21 is mounted inside the resin package 11 surrounded by the frame-shaped rib 17. The electrode terminal 21 a of the image pickup device 21 is connected to the device connection land 13 of the resin package 11 by a thin metal wire 22, and the transparent cover plate 24 is bonded to the stepped portion 17 a of the frame-shaped rib 17.

  As shown in FIG. 3B, the resin package 11 has an element mounting region 27 for mounting the semiconductor imaging element 21 at a predetermined position surrounded by the frame-shaped rib 17. The resin substrate 12 has a flat plate shape, the die pattern 18 disposed at a position corresponding to the element mounting area 27 on one surface, the element connection land 13 disposed around the element mounting area 27, and the other surface. And an external connection land 14 arranged at a predetermined position.

  The resin base material 12 has a multilayer wiring structure in which an internal wiring layer 12d and via conductors 12b and 12c electrically connected to the internal wiring layer 12d are formed in the inner layer region of the main base material 12a. The connection land 14 is electrically connected through the internal wiring layer 12d and the two via conductors 12b and 12c. The resin substrate 12 has a rectangular shape, and the thickness thereof can be selected in the range of about 40 μm to 1000 μm. However, in order to realize a thin solid-state imaging device, the thickness is preferably about 200 μm.

  Although the glass epoxy resin represented by FR-4 is used for the main base material 12a of the resin base material 12, it is not limited to this, For example, an epoxy resin, bismaleimide-triazine resin (BT resin) ), Acrylic butadiene styrene resin (ABS resin), polyimide resin, polyamide resin and acrylic resin may be used. Further, a glass cloth impregnated with any of these resins can also be used.

  A first organic film 15 is formed on one surface of the resin substrate 12, and a second organic film 16 is formed on the other surface, and the die pattern 18 and the element connection land 13 are formed. Is exposed in a predetermined shape at a predetermined position of the first organic film 15, and the external connection land 14 is exposed in a predetermined shape at a predetermined position of the second organic film 16.

  That is, as shown in FIGS. 3A and 3B, the first organic film 15 not only covers the outer peripheral region of the element connection land 13 but also the resin base material 12 surrounded by the frame-shaped ribs 17. It is formed in a continuous pattern shape on one surface, and the opening 15a is smaller than the element connection land 13 and is open to the extent that only a part of the die pattern 18 is exposed. The second organic coating 16 not only covers the outer peripheral area of the external connection land 14 but is also formed entirely on the other surface of the resin substrate 12, and the opening 16 a is formed on the external connection land 14. Although the opening is small, it is not always necessary to form it in a small opening. The first organic film 15 and the second organic film 16 will be described in detail later.

  As shown in FIG. 2B, the semiconductor image pickup device 21 is formed on the first organic film 15 and the die pattern 18 corresponding to the device mounting region 27 of the resin package 11, for example, a conductive thermosetting adhesive 23. Is fixed by adhesion. The frame-like ribs 17 are fixed to the outer peripheral region rather than the element connection lands 13 on one surface of the resin base material 12, and have a height that does not contact at least the fine metal wires 22.

  The frame-shaped rib 17 is formed by forming in advance a frame shape using, for example, a biphenyl resin used for mold molding, and is bonded and fixed to the resin base material 12. However, the frame-shaped rib 17 is limited to the biphenyl resin. For example, an epoxy resin can also be used. A stepped portion 17a for fitting and fixing the transparent cover plate 24 is formed on the inner peripheral portion of the frame-shaped rib 17, but such a shape is formed at the same time as forming the frame-shaped rib. Can be easily processed. However, when the transparent cover plate 24 can be bonded to the frame-shaped rib 17 without deviation, it is not necessary to provide such a stepped portion 17a.

  The transparent cover plate 24 is disposed by being fitted into the stepped portion 17a of the frame-shaped rib 17, and is made of an epoxy resin, an acrylic resin, a polyimide resin, or the like, and a photothermosetting adhesive 25 having ultraviolet curing characteristics. Used to adhere to the stepped portion 17a. The transparent cover plate 24 is made of, for example, hard glass, quartz, or transparent resin, and has a thickness in the range of 100 μm to 600 μm, preferably about 400 μm.

  The external connection electrode 14 is formed with a conductive electrode 26 for mounting on a circuit board of an electronic device. The conductive electrode 26 may be, for example, a solder ball, or may be a resin ball having a conductive film formed on the surface. As the solder balls, solder materials having various compositions such as Sn—Ag—Cu, Sn—Ag—Bi, and Zn—Bi can be used. When a solder ball is used for the conductive electrode 26, it can be soldered and mounted on a circuit board, or may be mounted using a conductive adhesive. Also, when using conductive resin balls, either soldering or bonding with a conductive adhesive may be used.

  The element connection lands 13 formed on both surfaces, the electrode pattern including the die pattern 18 and the external connection lands 14 are formed as follows, for example. The electrode patterns other than the element connection lands 13 and the die pattern 18 are not shown.

  First, a conductive coating such as copper is directly deposited on the main substrate 12a using electrolytic plating, electroless plating, or a combination thereof. Or conductor foil, such as electrolytic copper foil, and the prepreg of the main base material 12a are laminated | stacked, it hot-presses and adhere | attaches, and copper foil is etched and pattern formation is performed. In this case, the thickness is preferably in the range of 5 μm to 50 μm, but is more preferably set to a thickness of about 15 μm from the viewpoint of pattern processing and the like. The conductor film thus formed is subjected to pattern processing, for example, by etching. Then, a two-layer film of nickel (Ni) and gold (Au) is formed on the upper layer by using electrolytic plating, electroless plating, or the like. These thicknesses are, for example, nickel in the range of 1 μm to 10 μm, preferably 3 μm, and gold in the range of 0.01 μm to 0.1 μm, preferably 0.05 μm.

  Below, the 1st organic film 15 and the 2nd organic film 16 are demonstrated. The first organic coating 15 and the second organic coating 16 are made of a solder resist containing a filler and mainly composed of an epoxy resin. The solder resist is applied and cured.

  As a specific example, the first organic coating 15 has a higher filler content than the second organic coating 16, and a filler composed of silica particles is added to the epoxy resin in a proportion of 50% to 90% by weight. Solder resist. On the other hand, the second organic coating 16 is obtained by adding a filler made of silica particles to the epoxy resin at a ratio of 5 wt% to 10 wt%.

  In this case, increasing the silica particles as the filler is preferable for improving the moisture resistance. However, if it exceeds 90% by weight, the coating film hardness increases and cracks are easily generated, so that the moisture resistance cannot be improved. Thus, by making the filler content of the first organic coating 15 greater than the filler content of the second organic coating 16, the linear expansion coefficient and the improvement in moisture resistance of the first organic coating 15 are improved. The rigidity can be increased. The first organic film 15 may be formed by a screen printing method, for example.

  The thickness of the first organic film 15 and the second organic film 16 is desirably set in the range of 10 μm to 100 μm, and a more preferable thickness is about 30 μm. That is, when it is less than 10 μm, it becomes difficult to make the filler content 50% by weight or more, and the moisture resistance cannot be increased. On the other hand, if the thickness is larger than 100 μm, the moisture permeation characteristics can be improved, but cracks and the like are likely to occur. Therefore, the overall moisture resistance cannot be increased. .

  As the filler, aluminum silicate particles, titanium oxide particles, aluminum oxide particles, zirconium oxide particles and the like can be used without being limited to silica particles, and materials having hygroscopicity such as silica gel with respect to these fillers. May be added.

  In the above description, the case where an epoxy resin is used as the main component of the first organic film 15 and the second organic film 16 has been described. However, even if a resin material used for a solder resist such as a polyimide resin is used. Good. Alternatively, a commonly used solder resist may be used as the second organic film 16, and a material obtained by further adding a filler to the solder resist may be used as the first organic film 15.

  Next, a method for manufacturing the solid-state imaging device 10 of the present embodiment will be described with reference to FIGS. FIG. 4 is a cross-sectional view of a main process for manufacturing a resin package in the manufacturing process of the solid-state imaging device. FIG. 5 is a cross-sectional view of a process of mounting the semiconductor imaging device 21 on the resin package 11 and sealing with the transparent cover plate 24. In the manufacturing process of the resin package 11, a plurality of resin packages 11 are formed in a lump so that a flat plate made of resin is used.

  Here, the resin flat plate 28 is in a long state before being divided into individual pieces as the resin base material 12, and a glass epoxy resin is used for the main base material 12a. The resin flat plate 28 has a multilayer wiring structure in which the internal wiring layer 12d and the via conductors 12b and 12c are formed in the inner layer region, and the element connection land 13 and the external connection land 14 formed on the front and back surfaces are different. They are electrically connected via two via conductors 12b, 12c arranged at a position and an internal wiring layer 12d.

  First, as shown in FIG. 4A, the die pattern 18 disposed in the element mounting area 27 for mounting the semiconductor imaging element 21 and a plurality of element connection lands 13 disposed around the element mounting area 27. Are formed on one surface of the resin flat plate 28 at a constant arrangement pitch.

  Simultaneously with this fabrication, the external connection lands 14 electrically connected to the element connection lands 13 are arranged on the other surface of the resin flat plate 28 at the same arrangement pitch as the arrangement pitch of the die pattern 18 and the element connection lands 13. Then, a multi-sided substrate 29 is formed.

  In addition, although illustration is abbreviate | omitted, the electrode pattern for connecting these is also formed on the one surface and the other surface of the resin flat plate 28. In the present embodiment, an example in which two resin packages 11 are formed on the resin flat plate 28 is shown. However, actually, a plurality of resin packages 11 are further manufactured collectively.

  Next, as shown in FIG. 4B, the second organic film 16 is formed on the other surface of the resin flat plate 28. As the resin material for forming the second organic coating 16, a material having photosensitivity and having a smaller amount of silica particles as a filler added than the material forming the first organic coating 15 is used. Specifically, as described above, the first organic coating 15 is formed using a solder resist in which a filler composed of silica particles is added to the epoxy resin in a proportion of about 50% by weight. Similarly, it forms using the soldering resist which added the filler which consists of a silica particle in the ratio of 10 weight% in the epoxy resin.

  The coating of the solder resist on the resin flat plate 28 was applied to the entire surface of the resin flat plate 28 to a thickness of about 30 μm, for example, by screen printing. In addition, other methods such as a curtain coating method, a spray coating method, a roll coating method, or a normal pressure roll laminating method using a photosensitive dry film, a vacuum press laminating method, a vacuum roll laminating method, etc. are generally used as appropriate. Can be used. Thereafter, exposure and development were performed to expose only the external connection electrode 14 and to form a pattern shape in which the other was covered with the second organic film 16.

  Next, as shown in FIG. 4C, the first organic film 15 is formed on one surface of the resin flat plate 28. As the resin material for forming the first organic coating 15, a solder resist in which a filler composed of silica particles was added to the epoxy resin at a ratio of about 50% by weight as described above was used. The solder resist coating on the resin flat plate 28 was also applied to the entire surface of the resin flat plate 28 to a thickness of about 30 μm by screen printing in the same manner as the formation of the second organic film 16. Thereafter, the pattern was formed by exposing and developing only the element connection electrode 13 and covering the other with the first organic film 15 by exposure and development.

  The first organic film 15 and the second organic film 16 are formed by coating each solder resist on each of the front and back surfaces of the resin flat plate 28 and drying, and then simultaneously developing each surface after exposing each surface. Etching at a predetermined location may be performed by processing.

  After the first organic film 15 on one surface of the resin flat plate 28 and the second organic film 16 on the other surface are formed in a predetermined pattern shape, for example, 130 ° C. to 180 ° C. in a hot-air circulating drying furnace. Post-curing was performed for a predetermined time (about 60 minutes) at a temperature range of 150 ° C., preferably 150 ° C.

  Next, as shown in FIG. 4 (d), the frame-shaped portion 30 that will be diced later to become the frame-shaped rib 17 is bonded and fixed onto the outer peripheral region of the element connecting land 13 on the resin flat plate 28. The frame-shaped portion 30 has a lattice shape, and is open so as to surround the element mounting region 27 and the element connection land 13 at each lattice. Such a shape can be easily molded with a resin mold or the like.

Next, as illustrated in FIG. 4E, the multi-chamfer substrate 29 is cut along with the frame-shaped portion 30 along the center line of the frame-shaped portion 30 to be separated into individual pieces, thereby forming the resin package 11.
Next, as shown in FIG. 5A, the semiconductor imaging element 21 was bonded and fixed on the element mounting region 18 of the resin package 11 with a conductive thermosetting adhesive 23. Since the bonding of the semiconductor image pickup device 21 is performed by die bonding in a normal package, further description is omitted.

  Next, as shown in FIG. 5 (b), between the electrode terminal 21a of the semiconductor image pickup element 21 and the element connection land 13 of the resin base 12 is electrically connected by a thin metal wire 22 using a wire bonding method. Connected. As the thin metal wire 22, a gold wire is mainly used, but an aluminum wire or a copper wire may be used.

  Next, as shown in FIG. 5C, the transparent cover plate 24 is bonded and fixed with a photothermosetting adhesive 25 so as not to contact the fine metal wires 22. If the conductive electrode 26 is further formed on the external connection land 14 after this state, the solid-state imaging device 10 of the present embodiment can be obtained.

Hereinafter, the results of evaluating the moisture resistance of the solid-state imaging device 10 according to the present invention will be described. The following solid-state imaging device 10 was produced as a sample for this evaluation.
(Sample 1)
The resin substrate 12 is a multilayer wiring board, the main substrate 12a is a glass epoxy resin, and the thickness is 200 μm. The first organic film 15 formed on one surface of the resin substrate 12 was a solder resist made of an epoxy resin containing 50% by weight of silica particles.
(Sample 2)
Although the resin base material 12 has the same configuration, a solder resist made of an epoxy resin containing 70% by weight of silica particles in the first organic coating 15 was used.
(Sample 3)
Although the resin base material 12 has the same configuration, a solder resist made of an epoxy resin containing 90% by weight of silica particles as a filler of the first organic coating 15 was used.
(Comparative sample 1)
It is a sample for comparison with Sample 1, Sample 2 and Sample 3, and the configuration of the resin substrate 12 is the same, but the silica particle content of the first organic coating 15 is the same as that of the second organic coating 16. The solder resist which consists of the epoxy resin made to contain 10 weight% same as the case was used.

  Thirty of these samples were prepared, and a condensation experiment was conducted to evaluate moisture resistance based on the presence or absence of condensation. In the dew condensation experiment, the transparent cover plate 24 was bonded with the photothermosetting adhesive 25, left in a 60 ° C., 90% temperature / humidity atmosphere for 100 hours, and then exposed to a −5 ° C. atmosphere. Then, it was observed with the naked eye through the transparent cover plate 24 whether or not condensation had occurred in the space where the semiconductor imaging device 21 was mounted. The results are shown in Table 1.

表１からわかるように、本発明に係る試料１から試料３までにおいては、結露の発生はみられなかったのに対して、比較試料１では大半の試料で結露が発生した。以上の結果から、本発明に係る固体撮像装置１０では、耐湿性が改善されることが確認された。

As can be seen from Table 1, in Samples 1 to 3 according to the present invention, no condensation was observed, whereas in Comparative Sample 1, condensation occurred in most samples. From the above results, it was confirmed that the moisture resistance was improved in the solid-state imaging device 10 according to the present invention.

  In addition, since the filler content of the first organic coating 15 was increased, it was confirmed that the linear expansion coefficient was reduced and the warp of the resin base material 12 was also reduced. It has been found that the occurrence of mounting defects when mounting can be greatly reduced. In addition, by increasing the filler content of the first organic film 15, the heat conduction of the organic film is increased, and heat generated from the semiconductor image sensor can be dissipated not only in the substrate thickness direction but also in the plane direction. Thus, the effect of preventing deterioration of the characteristics of the device due to high temperature was also obtained.

  FIG. 6 is a cross-sectional view showing a configuration of a solid-state imaging device 40 according to another embodiment of the present invention. The solid-state imaging device 40 is characterized in that the first organic film 32 is also formed on the inner peripheral surface of the frame-shaped rib 17. By forming the first organic film 32 on the inner peripheral surface of the frame-shaped rib 17 in this way, moisture transmission can be suppressed even if the width of the frame-shaped rib 17 is reduced. A smaller solid-state imaging device can be realized.

  When the frame-like ribs 17 are made of resin, the thickness in the width direction usually needs to be 0.4 to 0.6 mm, but the first organic coating 32 is also applied to the inner peripheral surface of the frame-like ribs 17 of the present invention. For example, even if the thickness is 0.1 to 0.2 mm, moisture permeation can be sufficiently suppressed.

  FIG. 7 is a cross-sectional view showing an example in which the solid-state imaging device according to the present invention is used in a camera module. In FIG. 7, a camera module 60 is completed by mounting a housing 61 containing a lens 62 and a color filter 63 on the solid-state imaging device 10.

  Here, it is very important to parallel the rod 61 and the solid-state imaging device 10. Therefore, when the solid-state imaging device 10 is built as the camera module 60, it may be assembled as the camera module 60 immediately before being incorporated into a set device (for example, a digital camera or a mobile phone with a camera).

  By using the present invention, not only the improvement in moisture resistance on the time axis from the production of the solid-state imaging device 10 to the completion of the camera module 60 is achieved, but also the heat and mechanical stress during assembly of the camera module 60. In addition, the solid-state imaging device 10 that can withstand the above can be realized. Furthermore, it goes without saying that if the camera module 60 using the solid-state imaging device 10 shown in FIG. 6 is applied, the camera module 60 can be reduced in size.

  FIG. 8 shows an example in which the camera module 60 of the present invention is used in a mobile phone as a portable electronic device, and is a perspective view showing a state in which the camera module 60 is mounted on the mobile phone 50. In FIG. 8, the small display unit 51 and the camera module 60 of the present invention are arranged on the surface of the display unit 52. The display unit 52 can be opened by the hinges 54 and 55. However, by using the camera module 60 of the present invention, the display unit 52 can be further reduced in size and thickness as compared with a conventional mobile phone. If the camera module 60 using the solid-state imaging device 10 shown in FIG. 6 is applied, a smaller mobile phone can be obtained.

  In the optical device device according to the present invention, since the first organic film for preventing moisture permeation is formed inside the resin package, the moisture resistance is greatly improved, and the surface of the optical device device is rubbed against other objects. Even if this phenomenon occurs, the reliability does not decrease. For this reason, there is a possibility of being exposed to a high-temperature state or a high-humidity state, and it is useful in the field of portable electronic devices such as mobile phones that are required to be thin and small.

1 is a schematic perspective view of a solid-state imaging device according to an embodiment of the present invention. (A) is a figure which shows the structure of the solid-state imaging device of this Embodiment, The top view seen from the transparent cover board side, (b) is 2A-2A arrow sectional drawing of (a). (A) is a top view which shows the structure of the resin package used for the solid-state imaging device of this Embodiment, (b) is 3A-3A arrow sectional drawing of (a). Sectional drawing of the main process for producing the resin package among the manufacturing processes of the solid-state imaging device of this Embodiment Sectional drawing of the process which mounts a semiconductor image pick-up element in a resin package, and is sealed with a transparent cover board among the manufacturing processes of the solid-state imaging device of this Embodiment. Sectional drawing which shows the structure of the solid-state imaging device in other embodiment of this invention Sectional drawing which shows the example which used the solid-state imaging device of this invention for the camera module The figure which shows the example using the camera module of this invention, and is a perspective view which shows the state mounted in the mobile phone

Explanation of symbols

DESCRIPTION OF SYMBOLS 10,40 Solid-state imaging device 11 Resin package 12 Resin base material 12a Main base material 12b, 12c Via conductor 12d Internal wiring layer 13 Element connection land 14 External connection land 15 First organic film 15a Opening 16, 32 2nd Organic coating 16a Opening 17 Frame-shaped rib 17a Stepped portion 18 Die pattern 21 Semiconductor imaging device 21a Electrode terminal 22 Metal wire 23 Thermosetting adhesive 24 Transparent lid plate 25 Adhesive 26 Conductive electrode 27 Element mounting region 28 Resin flat plate 29 Multi-sided substrate 50 Mobile phone 52 Display unit 51 Small display unit 54,55 Hinge 60 Camera module 61 Fence tube 62 Lens 63 Color filter

Claims (11)

A flat resin base material having an optical device mounting area on one surface, a frame-shaped rib that is fixed to an outer peripheral area on one surface of the resin base material and surrounds the element mounting area, and the element mounting area An optical device mounted thereon, and a transparent cover plate that covers the optical device and is bonded to the frame-shaped rib,
An optical device characterized in that the first organic film formed on one surface of the resin base material is made of a solder resist, and the filler content of the solder resist is in the range of 50 wt% to 90 wt%. apparatus. The resin base material has an optical device connection land on one surface and an external connection land on the other surface, and the electrode of the optical device and the optical device connection land are electrically connected. The optical device connection land is exposed at the opening of the first organic film formed on one surface of the resin base material, and the external connection land is formed on the other surface of the resin base material. The second organic film is exposed at the opening of the second organic film, the first organic film and the second organic film are made of a solder resist, and the first organic film is compared with the second organic film. 2. The optical device apparatus according to claim 1, wherein the content of the filler is high and the content is in the range of 50 wt% to 90 wt%. The optical device apparatus according to claim 1, wherein the optical device includes a semiconductor image sensor and constitutes a solid-state imaging device. The first organic coating covers each outer peripheral region of the optical device connecting land, and at least a part of the electrode pattern formed on the resin base material surface in the region surrounded by the frame-shaped rib. The optical device apparatus according to claim 2, wherein the optical device device is formed in a pattern shape that overlaps and is continuous as a whole. 5. The optical device device according to claim 1, wherein the frame-shaped rib is made of a resin material, and the first organic film is formed on an inner peripheral surface thereof. The optical device apparatus according to claim 2, wherein the fillers of the first organic film and the second organic film are made of different inorganic particles. The resin base material has a multilayer wiring structure in which an internal wiring layer is formed in an inner layer region, and the optical device connection land and the external connection land are formed in an inner layer region of the resin base material and The optical device device according to claim 2, wherein the optical device device is electrically connected via a via conductor. The resin base material is made of one kind selected from glass epoxy resin, epoxy resin, bismaleimide-triazine resin (BT resin), acrylic butadiene styrene resin (ABS resin), polyimide resin, polyamide resin and acrylic resin. The optical device apparatus according to claim 1, wherein:   A camera module using a solid-state imaging device in which an optical device in the optical device device according to claim 1 is configured as a semiconductor imaging device. A plurality of element mounting areas on which a semiconductor imaging element is mounted and a plurality of element connecting lands arranged around the element mounting area are formed on one surface of the resin flat plate at a constant arrangement pitch, and the element connecting area Forming external connection lands electrically connected to the lands on the other surface of the resin flat plate with the same arrangement pitch as the arrangement pitch,
A filler content of 50 is provided on one surface of the multi-planar substrate, covering the outer peripheral region of each of the element connecting lands and at least on the surface of the resin flat plate corresponding to the region surrounded by the frame-shaped rib. A step of forming a first organic film having a continuous pattern shape using a solder resist having a weight% to 90% by weight range;
Forming a second organic film having a lower filler content than the first organic film on the other surface of the multi-sided substrate so that the external connection lands are exposed;
Adhering a lattice-shaped frame-shaped portion on one surface of the multi-sided substrate to the outer peripheral area of the element connection land so as to surround each element mounting area;
Cutting the multi-chamfer substrate and the frame-shaped portion into individual pieces along the center line of the frame-shaped portion;
Mounting a semiconductor image sensor in the element mounting region, and connecting the electrode terminal of the semiconductor image sensor and the element connection land with a thin metal wire;
And a step of covering the semiconductor imaging device and the thin metal wire and bonding a transparent cover plate to the frame-shaped rib. The resin flat plate has a multilayer wiring structure in which an internal wiring layer is formed in an inner layer region corresponding to the arrangement pitch, and electrical connection between the element connection land and the external connection land is performed by the resin flat plate. The internal wiring layer formed in the inner layer region and at least two via conductors electrically connected to the internal wiring layer and arranged at different positions are used. Manufacturing method of the optical device apparatus.

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