JP2008142966A - Inkjet recording head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inkjet recording head for decreasing flowing into a flow path of an adhesive while adhesive strength and adhesive durability of a substrate of an inkjet constituent member are ensured. <P>SOLUTION: The adhesive surface of an Si single crystal is roughened to a definite degree by an anodizing treatment to improve the adhesive strength and the adhesive durability. In addition, by utilizing a constitution for making a step difference in the height direction, the flowing into the flow path of the adhesive is decreased. The difference in its height can be precisely formed at the same time with the anodizing treatment by arranging a mask material on the non-anodizing treatment part. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a liquid ejection head that ejects a desired liquid by energy generated from an ejection energy generation element by an applied signal.

  Conventionally, liquid ejecting apparatuses have been applied in various fields such as microfabrication, experimental analysis, and image formation. Here, an ink jet recording method will be described as an example.

  An ink jet recording method that forms an image by ejecting ink droplets and depositing them on a recording medium has the advantages of being capable of high-speed recording, high recording quality, and low noise. Furthermore, this method has many excellent advantages such as easy color image recording, recording on plain paper and the like, and further facilitating miniaturization of the apparatus.

  A recording apparatus using such an ink jet recording method is generally provided with an ejection port for ejecting ink as flying ink droplets, an ink path communicating with the ejection port, and a part of the ink path. There is provided a recording head having energy generating means for giving ejection energy to the ink inside.

  In order to meet the demand for high-definition printing in recent years, precise fine processing and a complicated desired shape accompanying the increase in the number of nozzles have been required.

  The higher the density of the head, the smaller the adhesion / bonding area between the partition walls of the nozzle connection port and the weakening of the bonding / bonding force. In particular, when an ink jet recording head is manufactured by bonding substrates together by an adhesion process, there is a problem of peeling on the adhesion surface due to the adhesion or ink leakage between pressure generation chambers due to adhesion failure.

  In addition, with the increase in definition, the influence of the adhesive that enters the ink pressure generating chamber becomes significant, and it has become important to suppress the penetration of the adhesive.

  In order to solve the above problem, for example, in Japanese Patent Laid-Open No. 11-058737, the surface area of adhesion is improved by roughening the adhesion surface by etching, mechanical polishing or the like, thereby achieving improvement in adhesion.

For example, in Japanese Patent Laid-Open No. 2002-205404, a concave structure is formed by anisotropic etching of a Si (100) single crystal substrate, and excess adhesive is allowed to flow into the recess, thereby allowing the adhesive to flow into the ink flow path. It is preventing.
Japanese Patent Laid-Open No. 11-058737 JP 2002-205404 A

  As disclosed in JP-A-11-058737, roughening the surface by etching, polishing or the like has the following problems.

  In wet etching, it is difficult to uniformly adjust the surface roughness suitable for increasing the adhesion surface area. Also in dry etching, a micromask is required on the surface to be etched in order to achieve surface roughness suitable for increasing the adhesion surface area. In Japanese Patent Laid-Open No. 11-058737, there is no specific method for achieving surface roughness in etching.

  Further, if the surface is rough due to mechanical polishing, there is a risk of destruction depending on the structural rigidity of the polished surface. In particular, high-definition ink-jet recording heads in recent years have advanced, and the structural strength has been weakened because the partition walls separating the flow paths are thin.

  Further, as in JP 2002-205404, in anisotropic etching of a Si (100) single crystal substrate, the mirror surface of Si (111) on the etched surface and Si (100) on the non-etched surface is an adhesive surface, There is no roughness and it does not lead to much improvement in adhesive strength. Further, in the case of anisotropic etching, the etching mask is limited to the surface index, and it is difficult to form a concave structure corresponding to the discharge port shape.

  The present invention has been made in view of these problems, and the object of the present invention is to allow the adhesive to flow into the flow path while ensuring the adhesive strength and durability of the substrate of the ink jet component. It is an object of the present invention to provide an ink jet recording head that reduces the amount of ink.

  That is, the ink jet recording head of the present invention is an ink jet recording head configured to seal a flow path by adhering at least two or more substrates, and has a porous structure on at least one adhesive surface of the adhesive substrate. It is characterized by the formation of a body.

  In the ink jet recording head of the present invention, the porous structure is a layer obtained by anodizing a Si single crystal substrate.

  The ink jet recording head of the present invention is characterized in that the anodized layer is formed so as not to contact a liquid flow path penetrating the substrate.

  The ink jet recording head of the present invention is characterized in that the anodized layer is concave with respect to the non-anodized portion.

  The ink jet recording head of the present invention is characterized in that the concave volume portion described above is 30% to 90% of the adhesive layer volume in the adhesive region.

(Function)
By roughening the surface of the Si single crystal to a certain degree by anodizing treatment, it becomes possible to improve the adhesion strength and adhesion durability more than conventional.

  Further, by controlling the volume of the recess to a suitable range, excess adhesive flows into the recess, and the adhesive necessary for bonding the two or more members without defects is between the two layers. By remaining, the ink flow path is not blocked and the flow path resistance is not increased, and good adhesion can be achieved.

As described above, according to the present invention, it is possible to improve the bonding strength and bonding durability by roughening the surface of the Si single crystal to a certain degree by anodizing treatment. In addition, by using a configuration in which a step is provided in the height direction, the flow of the adhesive into the flow path can be reduced. The height difference can be accurately formed at the same time as the anodizing treatment by arranging the mask material in the non-anodizing treatment portion. Furthermore, it can be expected that the durability of adhesion is further improved by providing a porous layer on both sides of the adhesion.
As a result, it is possible to provide a highly durable ink jet recording head that can prevent deterioration in characteristics, structural fatigue, or destruction due to adhesion layer peeling compared to the prior art when driven for a long time.

  The present invention will be described based on the configuration diagram of the ink jet.

  FIG. 11 is an ABC cross-sectional view in the pressure chamber longitudinal direction (AB direction), and FIG. 9 shows the CA direction at the D position. The ink flow path is composed of an ink reservoir 1104, a rear throttle 1103, an individual pressure chamber 1105, nozzle communication ports 1106 and 1112, and a nozzle 1113. The diaphragm side is configured to be in contact with the flow path.

  The present invention aims to improve the adhesive strength and the adhesive durability by performing a modification treatment on at least one of the adhesive surfaces in the bonding of the layer having a nozzle and the layer having an individual pressure chamber by an adhesive. . 11 and 9, a porous layer is formed on the bonding surface of the substrate 1107 in the bonding step between the substrate 1107 on the individual liquid chamber side and the layer 1111 having the nozzle plate.

  In the present invention, the surface of the Si single crystal substrate is anodized, so that the structure is mirror-flat and the surface layer becomes a porous structure coated with a SiO2 film, thereby realizing a uniform roughness of the substrate surface. .

  By thus roughening the adhesive application surface to a certain degree, it becomes possible to improve the surface applicability of the surface modification treatment agent typified by the silane coupling agent and the adhesive, and further improve the adhesive strength. . In particular, in a high-precision and high-density IJ head that has been demanded in recent years, using a single-crystal Si substrate for the flow path configuration and further using a photolithography process is being established as one method. Based on the above, anodizing the surface of the Si single crystal substrate is a suitable technique that does not require a physical polishing step and can roughen the surface without causing cracks such as polishing scratches. .

As the Si substrate to be anodized, single crystal Si, polycrystal Si, amorphous Si, or the like is used. The surface of the Si substrate is made porous by electrochemical etching. For example, when a p-type Si substrate is immersed in a solution obtained by adding 0.1 to 5 times ethyl alcohol to a 48% hydrofluoric acid aqueous solution and anodized at a current density of 5 to 500 mA / cm ² for 1 to 60 minutes, the substrate surface becomes It is made porous. At this time, if the ethyl alcohol is less than 0.1 times the hydrofluoric acid aqueous solution, the formation of porosity is hindered by the bubbles generated during the anodic treatment. On the other hand, ethyl alcohol exceeding 5 times makes the porous structure extremely brittle, making it difficult to handle a stable sample. On the other hand, when the current density exceeds 500 mA / cm ² , electropolishing starts to occur instead of making it porous. Conversely, when the current density is less than 5 mA / cm ² , long-time treatment is required.

  When using an n-type substrate, in addition to the same processing conditions, it is necessary to irradiate the Si substrate with light during the anodizing treatment. Porous Si produced from an n-type Si substrate has a low porosity even when chemical conversion treatment is performed at the same current density as compared with porous Si produced from a p-type Si substrate, so that the porous structure becomes stable.

  In addition, by arranging a mask having a high etching selectivity with HF in the vicinity of the flow path on the substrate surface, the anodizing treatment does not proceed relatively and the Si surface is maintained. As a result, a height difference is formed between Si and the anodizing treatment part, and the height difference functions as a structure that prevents the adhesive from entering the flow path. In FIG. 11 and FIG. 9, 1109 and 1201 function as a structure that forms a height difference.

  The layer having a nozzle (nozzle plate) may be produced by SUS punching, or the Si single crystal substrate may be dry-etched. The adhesive is thinly applied to the nozzle plate side by spin coating, and excess adhesive existing on the opposite side from the nozzle tip side is sucked out using a vacuum pump. When a SUS thin plate is used as the nozzle plate, the applicability of the adhesive is stabilized by performing US cleaning and UV ashing before applying the adhesive.

  When a Si single crystal substrate is used, after anodizing, nozzle processing is performed using a photolithography process, a surface modifier is applied in a gas phase, and an adhesive is applied by spin coating. Thereafter, in the same manner, excess adhesive existing on the opposite side from the nozzle tip side is sucked out using the vacuum pump.

  It is also possible to apply selected areas in the adhesive application. For example, when a Si single crystal substrate is used, each mask pattern that separates the application region and the non-application region is arranged, and the surface modifier is selectively applied by a resist mask or the like. By doing so, you may utilize that a film thickness difference becomes easy to be produced with the degree of a modification process at the time of spin coating application of an adhesive.

  The adhesive may be a thermosetting type, but the two-component reaction, UV delayed curing, etc. are preferable because the thermal stress at the time of bonding is reduced.

  The pressure generation chamber and the flow path having a partition perpendicular to the substrate surface are anisotropically etched with a KOH solution of a Si (110) single crystal substrate, or a gas containing SF6 gas as a main component is used for the Si single crystal substrate. Can be produced with high accuracy by dry etching.

  Typical examples of the energy generating element include a piezo element, a heat generating element, and electrostatic force. However, there is no problem as long as the element can generate discharge energy. Here, a piezoelectric element that generates ejection energy by bending vibration will be described.

  As a method for forming a piezoelectric / electrostrictive film on a vibration plate, a thin film formed on a substrate may be bonded or bonded by an adhesive or anodic bonding, and then the formed substrate may be peeled off or directly vibrated. After forming the lower electrode on the plate, the piezoelectric / electrostrictive film may be formed by a film forming means that is within the temperature range allowed by the structure and that can be seen from the process step. For example, means adapted to the production process conditions such as sputtering, CVD, sol-gel, EB evaporation, laser ablation, etc. are used.

Examples of the material used for the piezoelectric / electrostrictive film include perovskite compounds. For example, it is a piezoelectric material such as lead zirconate titanate PZT [Pb (ZrxTi1-x) O ₃ ] or barium titanate BaTiO ₃ or an electrostrictive material of a relaxor-based material. The x of lead zirconate titanate (PZT) preferably has an MPB (meso phase boundary) composition of 0.40 to 0.65, but other composition ratios may be used. The crystal structure of PZT may be either tetragonal or rhombohedral. BaTiO ₃ is preferably a tetragonal (001) oriented film. BaTiO ₃ may contain a trace amount of lead and bismuth.

  The following can be selected as the electrostrictive material used in the present invention.

For example, PMN [Pb (MgxNb1-x) O ₃ ], PNN [Pb (NbxNi1-x) O ₃ ], PSN [Pb (ScxNb1-x) O ₃ ], PZN [Pb (ZnxNb1-x) O ₃ ], PMN-PT {(1-y) [Pb (MgxNb1-x) O ₃ ] -y [PbTiO ₃ ]}, PSN-PT {(1-y) [Pb (ScxNb1-x) O ₃ ] -y [PbTiO ₃ ]}, PZN-PT {(1-y) [Pb (ZnxNb1-x) O ₃ ] -y [PbTiO ₃ ]}, LN [LiNbO ₃ ], KN [KNbO ₃ ]. Here, x and y are numbers of 1 or less and 0 or more. For example, in the case of PMN, x is 0.2 to 0.5, and in PSN, x is preferably 0.4 to 0.7, y of PMN-PT is 0.2 to 0.4, y of PSN-PT is 0.35 to 0.5, and y of PZN-PT is 0.03 to 0.35 is preferred. Further, PMN-PZT, PZN-PZT, PNN-PZT, and PSN-PZT compounds in which Zr is substituted for Ti in PMN-PT, PZN-PT, PNN-PT, and PSN-PT may be used.

  The piezoelectric / electrostrictive film may have a single composition or a combination of two or more. Moreover, the composition which doped the trace amount element to the said main component may be sufficient. The piezoelectric / electrostrictive film of the present invention is preferably crystal-controlled in order to exhibit excellent piezoelectricity, and preferably has a specific orientation of a specific crystal structure of 50% or more by X-ray diffraction, Is more preferably 90% or more.

  As a material for forming the diaphragm, in addition to Pyrex (registered trademark) glass, SD2 glass, silicon oxide, metals such as nickel and chromium are suitable materials. There is no problem even if the diaphragm is laminated with a plurality of materials having different characteristics as described above. The thinning step is performed by using polishing, wet etching, and dry etching in combination.

  The electrode material is mainly composed of at least one of platinum, palladium, silver-palladium, silver-platinum, and platinum-palladium alloys.

  Specific examples are shown below, but the dimensions, shapes, materials, driving conditions, etc. of the drive element, diaphragm, pressure generation chamber, ink supply flow path, ink reservoir, nozzle, etc. are examples, and as design matters It can be changed arbitrarily. Hereinafter, the present invention will be described in more detail with reference to examples.

  The cross-sectional direction of the manufactured ink jet recording head is shown in FIG. 1, the bonding surface is shown in FIG.

  The manufactured inkjet recording head uses a 300 μm thick Si single crystal substrate (hereinafter referred to as a base), an ink reservoir 104, an individual pressure generation chamber 105 (width 60 μm, length 2.5 mm), a rear diaphragm 103, and a nozzle communication port 106. And a flow path including the connecting portion 111 and the nozzle 112. The nozzle is fixed to the nozzle plate 110 having a nozzle density of 300 dpi by bonding the base nozzle connection port.

Regarding the actuator part, the SD2 glass that has been thinned to a thickness of 3 μm (both polishing and wet etching) after anodic bonding to the substrate 107 of the Si single crystal substrate is used as the vibration plate 102, and a thickness of more than 1 μm is further formed thereon. Pt film _{/ Pb (Zr 0. 52 Ti} 0.48) O 3 ( hereinafter PZT) film 101 / the lower Pt film is formed by room temperature deposition. The wiring pattern is processed by photolithography and dry etching. In this embodiment, before the Pt upper electrode is formed, the PZT film is baked in an oxygen atmosphere at 680 ° C. for 5 hours to confirm crystallization of the PZT film.

As for the bonding surface between the substrate 107 and the nozzle plate 110, the substrate-side bonding surface 108 is anodized to form a porous layer having a depth of about 1 μm. The conditions of anodization when producing porous Si with a depth of 1 μm are as follows: application is 2.5 V, current density is 30 mA / cm ² , and the solution is HF: H ₂ O: C ₂ H ₅ OH = 1: 1: 1. The reaction time was 6 minutes.

  The nozzle plate 110 is formed by punching a SUS plate having a thickness of 100 μm in two steps and forming a recess 111 corresponding to a nozzle connection port on the substrate side and a tapered nozzle 112. Apply a thin layer of solvent-diluted adhesive on the nozzle plate side to a thickness of about 2μm with a spinner, suck the excess adhesive near the nozzle with a vacuum pump, volatilize the solvent, and then adhere to the substrate side. In this way, the substrate flow path was sealed, and the ink supply pipe was connected and electrically mounted by ACF.

  In this embodiment, the nozzle plate and the substrate are bonded, but the diaphragm and the substrate may be bonded. In the case of bonding, the bonded surface of the substrate may be anodized. Further, when Si is used for the diaphragm, it is also a good method to anodize the adherend surface of the diaphragm.

  The ink jet recording head of this example was immersed in ink at 60 ° C. for 1 month (Canon ink BCL-3eBk). As a result, no peeling occurred from the nozzle plate, and good ink droplet ejection was possible.

  Further, as a result of immersing the ink jet recording head produced by adhesion on the Si mirror surface without anodizing treatment in 60 ° C. ink (Canon ink) for one month, peeling occurred in the nozzle plate.

  As described above, it was confirmed that the adhesion between the nozzle plate and the substrate side was improved by applying anodizing treatment to the substrate-side adhesion surface before applying the adhesive.

  The cross-sectional direction of the manufactured ink jet recording head is shown in FIG. 3, the adhesive surface is shown in FIG. 4, and the device configuration will be described.

  The manufactured inkjet recording head uses a 300 μm thick Si single crystal substrate (hereinafter referred to as base 306), ink reservoir 304, individual pressure generation chamber 305 (width 60 μm, length 2.5 mm), rear diaphragm 303, nozzle communication port It is formed by a flow path including 306, its connecting portion 312, and nozzle 313. The nozzle 313 is fixed to a nozzle plate 311 having a 300 dpi nozzle density by adhesively connecting a base nozzle connection port. The configuration of the actuator unit is the same as that of the first embodiment.

  With respect to the bonding surface of the substrate with the nozzle plate, a porous structure by anodization is formed so as to avoid the vicinity of the flow path. As a result, structures 309 and 401 that form a difference in height from the porous surface on the bonding surface 308 of the base 307 are formed.

  The nozzle plate 311 is formed by punching a SUS plate having a thickness of 100 μm in two steps to form a recess 312 corresponding to a nozzle connection port on the substrate side and a tapered nozzle 313.

  Apply a thin layer of solvent-diluted adhesive to the nozzle plate side to a thickness of about 2μm with a spinner, and as shown in Fig. 5, suck the excess adhesive near the nozzle with a vacuum pump and volatilize the solvent. Then, the substrate flow path was sealed by bonding to the substrate side, the ink supply pipe was connected, and mounting by ACF was performed.

  In this example, several heads with different [recess volume / adhesive volume (%)] were produced in order to see the relationship between the etching depth and the adhesion state in the anodizing treatment.

  The concave volume indicates a portion separated by the structures 309 and 401 on the bonding surface of the base 307 subjected to anodizing treatment. The adhesive volume indicates an adhesive volume in a region where the substrate 307 adheres in the adhesive 310 applied to the nozzle plate side.

  The recess volume formed by the anodizing treatment was formed by changing the anodizing treatment conditions. FIG. 10 shows a table of the results of ink immersion experiments for various heads.

  First, in the case of 20 to 30% or less, the flow of the adhesive into the flow path is remarkable, and the ink flow path may be blocked by the adhesive. On the other hand, in the case of 90 to 100% or more, the gap becomes wide with respect to the applied adhesive amount, and an adhesion defect may occur. In the region between 30% and 90%, there was no blockage of the adhesive to the flow path, and no adhesion defect occurred.

  After immersing the head of Example 1 in Canon ink at 60 ° C. for 3 months and performing a destructive analysis, it is a level that is not a problem in practice, but from the cross section of the anodized layer in contact with the ink flow path to the adjacent nozzle slightly It was confirmed that ink erosion occurred.

  However, in the configuration of this example, it was confirmed that there was almost no ink leakage from the ink flow path to the nozzle plate adhesive layer, and there was almost no erosion to adjacent nozzles.

  The cross-sectional direction of the manufactured ink jet recording head is shown in FIG. 6, the nozzle plate side adhesive surface is shown in FIG. 7, and the device configuration will be described.

  The substrate and actuator side of the manufactured ink jet recording head are the same as in Example 2. In this embodiment, the nozzle plate 608 is made of a Si single crystal substrate.

  A porous structure by anodization is formed so as to avoid the vicinity of the flow path with respect to both the bonding surface of the substrate and the nozzle plate. The nozzle plate is formed by subjecting a Si single crystal substrate selectively anodized in advance to a dry etching process to form a recess 702 corresponding to a nozzle connection port on the substrate side and a tapered nozzle 607.

  First, a surface modifier was selectively applied to the nozzle plate surface by resist protection. Here, the wettability of the adhesive is lowered with respect to the region 610 that touches the common liquid chamber. After peeling off the resist mask, apply a thin layer of adhesive to the nozzle plate to a thickness of about 2μm on the nozzle plate side, as shown in Fig. 8, suck away excess adhesive near the nozzle with a vacuum pump, and volatilize the solvent. After that, the substrate flow path was sealed by bonding to the substrate side, the ink supply pipe was connected, and mounting by ACF was performed.

  After the ink jet recording head of this example was immersed in Canon ink at 60 ° C. for 3 months, peeling of the adhesive layer near the nozzle plate, ink leakage, etc. did not occur. As a result of the fracture cross-sectional analysis, it was confirmed that there was almost no ink leakage from the ink flow path to the nozzle plate adhesive layer and almost no ink was immersed in the porous layer as in Example 2. With this configuration, since there is a porous structure on both sides with respect to the bonding surface, an improvement in adhesion can be expected.

  Equipped with a plurality of inkjet recording heads (hereinafter referred to as IJ heads) of Example 3, provided with a drive circuit, a support for making the IJ head and the recording medium face each other at a desired interval, and according to input information Thus, a recording apparatus having a mechanism for changing the relative position between the IJ head and the recording medium was manufactured.

  The recording apparatus of this example was capable of high-resolution and high-speed printing, and stable liquid ejection was obtained over a long period of time compared to the conventional case.

Cross section of ink jet recording head in Example 1 Substrate-side adhesive surface of the ink jet recording head in Example 1 Cross section of ink jet recording head in Example 2 Substrate side adhesive surface of ink jet recording head in Example 2 Enlarged sectional view of the adhesive surface of the ink jet recording head in Example 2 Cross section of ink jet recording head in Example 3 Substrate side adhesive surface of ink jet recording head in Example 3 Expanded sectional view of the adhesive surface of the ink jet recording head in Example 3 Embodiment explanatory drawing: substrate side adhesive surface of inkjet recording head Table showing the results of ink immersion experiments for various heads Embodiment explanatory drawing: transverse section of inkjet recording head

Explanation of symbols

101 Pt film / PZT film / Pt film
102 SD2 diaphragm
103 Rear stop
104 Ink reservoir (common liquid chamber)
105 Individual liquid chamber (pressure generation chamber)
106 Nozzle connection
107 Base (Si single crystal substrate)
108 Porous Si layer
109 Adhesive
110 Nozzle plate
111 Flow path for connection to the nozzle connection port on the substrate side
112 nozzles
201 Nozzle contact
202 Ink reservoir (common liquid chamber)
203 Rear diaphragm
204 Porous Si
301 Pt film / PZT film / Pt film
302 SD2 diaphragm
303 Rear aperture
304 Ink reservoir (common liquid chamber)
305 Individual liquid chamber (pressure generation chamber)
306 Nozzle contact
307 Substrate (Si single crystal substrate)
308 Porous Si layer
309 Non-anodized part of bonding surface
310 Adhesive
311 Nozzle plate
312 Flow path for connection with the nozzle connection port on the substrate side
313 nozzle
401 Non-anodized part of bonding surface
402 Nozzle contact
403 Ink reservoir
404 Rear diaphragm
405 Porous Si
501 Base side
502 Non-anodized part of bonding surface
503 Porous Si layer
504 adhesive
505 Nozzle plate
506 Flow path for connection with substrate side nozzle connection
507 nozzle
601 substrate
602 Individual liquid chamber (pressure generation chamber)
603 Pt film / PZT film / Pt film
604 SD2 diaphragm
605 Ink reservoir (common liquid chamber)
606 Nozzle contact
607 nozzle
608 nozzle plate
609 Non-anodized part of bonding surface
610 Porous Si layer with reduced wettability of adhesive
611 Porous Si with wet adhesive
612 Non-anodized part of bonding surface
701 nozzle
702 Connection flow path to nozzle connection port on substrate
703 Non-anodized bonded surface
704 Anodizing part of bonding surface
705 Non-anodized part of bonding surface
706 Porous Si layer with reduced wettability of adhesive
801 Nozzle communication port on substrate side
802 substrate
803 Non-anodized part of bonding surface
804 Porous Si layer
805 nozzle
806 Connection flow path to the nozzle connection port of the substrate
807 Adhesive
808 Porous Si layer
1101 Pt film / PZT film / Pt film
1102 SD2 diaphragm
1103 Rear aperture
1104 Ink reservoir (common liquid chamber)
1105 Individual liquid chamber (pressure generation chamber)
1106 Nozzle communication port on substrate side
1107 Substrate
1108 Porous Si layer
1109 Non-anodized part of bonding surface
1110 Adhesive
1111 Nozzle plate
1112 Connection flow path to nozzle connection port on substrate
1113 nozzle
1201 Non-anodized part of bonding surface
1202 Nozzle communication port on substrate side
1203 Ink reservoir (common liquid chamber)
1204 Rear aperture
1205 Porous Si layer

Claims (5)

  An ink jet recording head configured to seal a flow path by adhering at least two base materials, wherein a porous structure is formed on at least one adhesive surface of the adhesive base material. An inkjet recording head.   2. The ink jet recording head according to claim 1, wherein the porous structure is a layer obtained by anodizing a Si single crystal substrate.   3. The ink jet recording head according to claim 1, wherein the anodized layer is formed so as not to contact a liquid flow path penetrating the substrate.   4. The ink jet recording head according to claim 1, wherein the anodized layer is concave with respect to the non-anodized portion.   5. The ink jet recording head according to claim 1, wherein the concave volume portion is 30% or more and 90% or less of the adhesive layer volume in the adhesive region.

Images