JP2008131006A - Heat-resistant adhesive tape for manufacturing semiconductor device - Google Patents

Heat-resistant adhesive tape for manufacturing semiconductor device Download PDF

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Publication number
JP2008131006A
JP2008131006A JP2006317581A JP2006317581A JP2008131006A JP 2008131006 A JP2008131006 A JP 2008131006A JP 2006317581 A JP2006317581 A JP 2006317581A JP 2006317581 A JP2006317581 A JP 2006317581A JP 2008131006 A JP2008131006 A JP 2008131006A
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JP
Japan
Prior art keywords
heat
adhesive tape
pressure
sensitive adhesive
resistant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006317581A
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Japanese (ja)
Other versions
JP4343943B2 (en
Inventor
Yasuhiro Amano
康弘 天野
Hiroyuki Kondo
広行 近藤
Takuji Okeyui
卓司 桶結
Yoshio Terada
好夫 寺田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
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Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP2006317581A priority Critical patent/JP4343943B2/en
Priority to KR1020070100992A priority patent/KR20080047262A/en
Priority to TW096141486A priority patent/TW200831633A/en
Priority to EP07022117A priority patent/EP1926137A3/en
Priority to CN2007101940118A priority patent/CN101186792B/en
Publication of JP2008131006A publication Critical patent/JP2008131006A/en
Application granted granted Critical
Publication of JP4343943B2 publication Critical patent/JP4343943B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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  • Engineering & Computer Science (AREA)
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  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
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  • Lead Frames For Integrated Circuits (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat-resistant adhesive tape capable of manufacturing a semiconductor device so that a series of manufacturing processes or processes for peeling the adhered tape is smoothly carried out, while allowing the adhered tape to suitably preventing resin from leaking during an encapsulation process. <P>SOLUTION: This heat-resistant adhesive tape for manufacturing the semiconductor device is for use in a method for manufacturing the semiconductor device which includes at least a process of mounting a semiconductor chip on a die pad of a metal lead frame bonded with the heat-resistant adhesive tape at an outer pad side, and a process of sealing the single face of the semiconductor chip side by using a sealing resin, and a process of dicing a sealed structure to individual semiconductor devices. Furthermore, the heat-resistant adhesive tape includes a substrate layer, and an adhesive layer containing hydrophilic layered silicate and an adhesive. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体装置の製造に用いる耐熱性粘着テープに関する。   The present invention relates to a heat resistant adhesive tape used for manufacturing a semiconductor device.

近年、ＬＳＩの実装技術において、ＣＳＰ（Ｃｈｉｐ Ｓｉｚｅ／Ｓｃａｌｅ Ｐａｃｋａｇｅ）技術が注目されている。この技術のうち、ＱＦＮ（Ｑｕａｄ Ｆｌａｔ Ｎｏｎ−ｌｅａｄｅｄ ｐａｃｋａｇｅ）に代表されるリード端子がパッケージ内部に取り込まれた形態のパッケージについては、小型化と高集積の面で特に注目されるパッケージ形態のひとつである。このようなＱＦＮの製造方法のなかでも、近年では複数のＱＦＮ用チップをリードフレームのパッケージパターン領域のダイパッド上に整然と配列し、金型のキャビティ内で、封止樹脂にて一括封止したのち、切断によって個別のＱＦＮ構造物に切り分けることにより、リードフレーム面積あたりの生産性を飛躍的に向上させる製造方法が、特に注目されている。   In recent years, CSP (Chip Size / Scale Package) technology has attracted attention in LSI mounting technology. Among these technologies, a package in which a lead terminal represented by a QFN (Quad Flat Non-leaded package) is incorporated in the package is one of the package forms that are particularly noted in terms of miniaturization and high integration. is there. Among such QFN manufacturing methods, in recent years, a plurality of QFN chips are regularly arranged on a die pad in a package pattern region of a lead frame, and then collectively sealed with a sealing resin in a mold cavity. A manufacturing method that dramatically improves the productivity per lead frame area by cutting into individual QFN structures by cutting has attracted particular attention.

このような、複数の半導体チップを一括封止するＱＦＮの製造方法においては、樹脂封止時のモールド金型によってクランプされる領域はパッケージパターン領域より更に外側に広がった樹脂封止領域の外側だけである。従って、パッケージパターン領域、特にその中央部においては、アウターリード面をモールド金型に十分な圧力で押さえることができず、封止樹脂がアウターリード側に漏れ出すことを抑えることが非常に難しく、ＱＦＮの端子等が樹脂で被覆されるという問題が生じ易い。   In such a QFN manufacturing method that collectively seals a plurality of semiconductor chips, the region clamped by the molding die at the time of resin sealing is only outside the resin sealing region that spreads further outside the package pattern region. It is. Therefore, in the package pattern region, particularly in the center thereof, the outer lead surface cannot be pressed against the mold with sufficient pressure, and it is very difficult to suppress the sealing resin from leaking to the outer lead side. The problem of QFN terminals and the like being covered with resin is likely to occur.

このため、上記の如きＱＦＮの製造方法に対しては、リードフレームのアウターリード側に耐熱性粘着テープを貼り付け、この耐熱性粘着テープの自着力（マスキング）を利用したシール効果により、樹脂封止時のアウターリード側への樹脂漏れを防ぐ製造方法が特に効果的と考えられる。   For this reason, in the manufacturing method of QFN as described above, a heat-resistant adhesive tape is attached to the outer lead side of the lead frame, and the sealing effect using the self-adhesive force (masking) of this heat-resistant adhesive tape is used for resin sealing. A manufacturing method that prevents resin leakage to the outer lead side when stopped is considered to be particularly effective.

このような製造方法において、リードフレーム上に半導体チップを搭載した後、あるいはワイヤボンディングを実施した後から耐熱性粘着テープの貼り合せを行うことは、ハンドリングの面で実質的に困難であることから、耐熱性粘着テープは最初の段階でリードフレームのアウターパット面に貼り合わせられ、その後、半導体チップの搭載工程やワイヤボンディングの工程を経て、封止樹脂による封止工程まで貼り合わせられることが望ましい。したがって、耐熱性粘着テープとしては、単に封止樹脂の漏れ出しを防止するだけでなく、半導体チップの搭載工程に耐える高度な耐熱性や、ワイヤボンディング工程における繊細な操作性に支障をきたさないなど、これらのすべての工程を満足する特性が要求される。この要求を満足するテープとして耐熱性粘着テープが開発されている（特許文献１）。   In such a manufacturing method, it is substantially difficult to handle the heat-resistant adhesive tape after mounting a semiconductor chip on a lead frame or after performing wire bonding. In addition, it is desirable that the heat-resistant adhesive tape is bonded to the outer pad surface of the lead frame in the first stage, and then bonded to the sealing process with the sealing resin through the semiconductor chip mounting process and the wire bonding process. . Therefore, the heat-resistant adhesive tape not only prevents leakage of the sealing resin, but also has high heat resistance that can withstand the mounting process of the semiconductor chip and does not interfere with delicate operability in the wire bonding process. Therefore, characteristics satisfying all these steps are required. A heat-resistant adhesive tape has been developed as a tape that satisfies this requirement (Patent Document 1).

しかしながら、ワイヤボンディング、樹脂封止等の工程が行われる高温時では粘着剤は従来の粘着特性を発揮することが難しく、著しく対被着体粘着力が低下する。そのためワイヤボンディング時の衝撃などにより被着体より粘着テープが剥離してしまい、その結果、樹脂封止時に封止樹脂がリードフレーム／粘着テープ間に漏れる等の問題点が生じることがある。
特開２００４−１４９３０号公報 However, it is difficult for the pressure-sensitive adhesive to exhibit the conventional pressure-sensitive adhesive properties at high temperatures in which steps such as wire bonding and resin sealing are performed, and the adhesion strength to the adherend is significantly reduced. For this reason, the adhesive tape is peeled off from the adherend due to an impact during wire bonding, and as a result, there may be a problem that the sealing resin leaks between the lead frame and the adhesive tape during resin sealing.
JP 2004-14930 A

本発明は前記の問題点に鑑みてなされたものであり、その目的は、近年の細密なＱＦＮの中でも、とくに多数のパッケージを同時に封止する大型のマトリックスパターンタイプに対しても、耐熱性粘着テープにより封止工程での樹脂漏れを好適に防止しながら、しかも貼着したテープが一連の工程やテープの剥離工程で支障を来たしにくい半導体装置の製造を可能とする耐熱性粘着テープを提供することにある。   The present invention has been made in view of the above-mentioned problems, and the object of the present invention is to provide a heat-resistant adhesive even for a large matrix pattern type that seals a large number of packages at the same time among recent fine QFNs. Provided is a heat-resistant pressure-sensitive adhesive tape that enables the manufacture of a semiconductor device in which a tape that has been adhered is less likely to cause trouble in a series of processes and a tape peeling process while suitably preventing resin leakage in a sealing process with the tape There is.

本願の発明者らは、前記の従来の課題を解決すべく、耐熱性粘着テープの物性、材料、厚み等について鋭意検討した。その結果、基材層と、親水性層状珪酸塩と粘着剤を含む粘着層とによって構成される耐熱性粘着テープを用いることにより前記目的を達成できることを見出して、本発明を完成させるに至った。   In order to solve the above-described conventional problems, the inventors of the present application diligently studied the physical properties, material, thickness, and the like of the heat-resistant adhesive tape. As a result, the inventors have found that the object can be achieved by using a heat-resistant adhesive tape composed of a base material layer and an adhesive layer containing a hydrophilic layered silicate and an adhesive, and have completed the present invention. .

即ち、本発明の要旨は、アウターパッド側に耐熱性粘着テープを貼り合わせた金属製のリードフレームのダイパッド上に半導体チップをボンディングする搭載工程と、封止樹脂により半導体チップ側を片面封止する封止工程と、封止された構造物を個別の半導体装置に切断する切断工程とを、少なくとも含む半導体装置の製造方法に用いる耐熱性粘着テープであって、前記耐熱性粘着テープが、基材層と、親水性層状珪酸塩と粘着剤を含む粘着層とを含むことを特徴とする半導体装置製造用の耐熱性粘着テープに関する。   That is, the gist of the present invention is to mount a semiconductor chip on a die pad of a metal lead frame in which a heat-resistant adhesive tape is bonded to the outer pad side, and to seal the semiconductor chip side on one side with a sealing resin. A heat-resistant pressure-sensitive adhesive tape used in a method for manufacturing a semiconductor device including at least a sealing step and a cutting step of cutting the sealed structure into individual semiconductor devices, wherein the heat-resistant pressure-sensitive adhesive tape is a base material It is related with the heat resistant adhesive tape for semiconductor device manufacture characterized by including the layer and the adhesion layer containing a hydrophilic layered silicate and an adhesive.

前記半導体装置の製造方法において用いる耐熱性粘着テープは、１７５℃雰囲気下にて測定される粘着力が０．２Ｎ／１９ｍｍ幅以上であることが好ましい。   The heat-resistant adhesive tape used in the method for manufacturing a semiconductor device preferably has an adhesive force measured in an atmosphere of 175 ° C. of 0.2 N / 19 mm width or more.

前記半導体装置の製造方法において用いる耐熱性粘着テープは、ステンレス板に貼り合わせた状態で２００℃にて1時間加熱後に、ＪＩＳ Ｚ０２３７に準じて測定される粘着力が５．０Ｎ／１９ｍｍ幅以下であることが好ましい。測定は常温（２３℃）で行なわれる。   The heat-resistant adhesive tape used in the method for manufacturing a semiconductor device has an adhesive strength measured in accordance with JIS Z0237 of 5.0 N / 19 mm width or less after heating for 1 hour at 200 ° C. while being bonded to a stainless steel plate. Preferably there is. The measurement is performed at room temperature (23 ° C.).

本発明の耐熱性粘着テープは封止工程での樹脂漏れを好適に防止することができ、親水性層状珪酸塩を用いることにより、粘着剤の凝集力が高まり、半導体製造工程における温度雰囲気下での対被着体粘着力を保持することができる。また、２００℃程度での高温加熱処理後でも被着体に対して糊残りをすることなく剥離することができる。更に、高温加熱処理時にも分解されにくい共重合体エマルションを含有する水分散型アクリル系粘着剤を用いることにより、ガスの発生量を少なくすることができる。発生ガス量の低減は、半導体チップの汚染を抑制し、また剥離力を低減できるので剥離性にも優れており、被着体への糊残りも生じない。耐熱性粘着テープにより封止工程での樹脂漏れを好適に防止しながら、しかも貼着した耐熱性粘着テープが一連の工程やテープの剥離工程で、支障を来たしにくい半導体装置の製造が可能となる。   The heat-resistant pressure-sensitive adhesive tape of the present invention can suitably prevent resin leakage in the sealing process, and by using hydrophilic layered silicate, the cohesive strength of the pressure-sensitive adhesive is increased, under the temperature atmosphere in the semiconductor manufacturing process. It is possible to maintain the adherence strength to the adherend. Further, even after high-temperature heat treatment at about 200 ° C., it can be peeled without leaving adhesive residue on the adherend. Furthermore, the amount of gas generated can be reduced by using a water-dispersed acrylic pressure-sensitive adhesive containing a copolymer emulsion that is not easily decomposed even during high-temperature heat treatment. The reduction in the amount of generated gas suppresses the contamination of the semiconductor chip and can reduce the peeling force, so that the peelability is excellent and no adhesive remains on the adherend. The heat-resistant adhesive tape can prevent the resin leakage in the sealing process, and the attached heat-resistant adhesive tape can be used to manufacture semiconductor devices that are unlikely to cause problems in a series of processes and tape peeling processes. .

本発明の耐熱性粘着テープは、基材層と、親水性層状珪酸塩と粘着剤を含む粘着層とを含むものである。基材層の材料としては、粘着層の基部となるものであれば特に限定されず、例えば、ポリイミド（ＰＩ）フィルム、ポリエチレンテレフタレート（ＰＥＴ）フィルム、ポリエチレンナフタレート（ＰＥＮ）フィルム、ポリエチレンサルフォン（ＰＥＳ）フィルム、ポリエーテルイミド（ＰＥＩ）フィルム、ポリサルフォン（ＰＳＦ）フィルム、ポリフェニレンサルファイド（ＰＰＳ）フィルム、ポリエーテルエーテルケトン（ＰＥＥＫ）フィルム、ポリアリレート（ＰＡＲ）フィルム、アラミドフィルム、液晶ポリマー（ＬＣＰ）などの樹脂材料が挙げられる。   The heat-resistant pressure-sensitive adhesive tape of the present invention includes a base material layer and a pressure-sensitive adhesive layer containing a hydrophilic layered silicate and a pressure-sensitive adhesive. The material of the base material layer is not particularly limited as long as it is a base part of the adhesive layer. For example, polyimide (PI) film, polyethylene terephthalate (PET) film, polyethylene naphthalate (PEN) film, polyethylene sulfone ( PES) film, polyetherimide (PEI) film, polysulfone (PSF) film, polyphenylene sulfide (PPS) film, polyetheretherketone (PEEK) film, polyarylate (PAR) film, aramid film, liquid crystal polymer (LCP), etc. The resin material is mentioned.

基材層の厚みは、折れや裂けを防止するため５μｍ以上が好ましく、好適なハンドリング性に鑑みて１０〜１００μｍがさらに好ましい。   The thickness of the base material layer is preferably 5 μm or more in order to prevent folding or tearing, and more preferably 10 to 100 μm in view of suitable handling properties.

本発明の粘着層は、親水性層状珪酸塩と粘着剤を含むことを特徴とする。   The pressure-sensitive adhesive layer of the present invention is characterized by containing a hydrophilic layered silicate and a pressure-sensitive adhesive.

上記粘着層は、親水性層状珪酸塩を含有する。親水性層状珪酸塩とは、主に二次元構造を有する粘土層が積み重なることによって結晶構造をなしている粘土鉱物をさす。また、親水性層状珪酸塩は溶媒中に加えることにより膨潤し、各層間距離が広がるという特性を有するだけでなく、その構造を有したまま層間にイオンや分子を取り込むことが出来るという特性を有する。本発明に用いる親水性層状珪酸塩は、水分散型アクリル系粘着剤中に分散可能な親水性層状珪酸塩であれば、特に限定はされないが、例えば、スメクタイト、サポナイト、ソーコナイト、スチブンサイト、ヘクトライト、マーガライト、タルク、金雲母、クリソタイル、緑泥岩、バーミキュライト、カオリナイト、白雲母、ザンソフィライト、ディッカイト、ナクライト、パイロフィライト、モンモリロナイト、バイデライト、ノントロナイト、テトラシリリックマイカ、ナトリウムテニオライト、アンチゴライト、ハロイサイトなどを挙げることができる。前記親水性層状珪酸塩は、天然物または合成物のいずれであってもよく、これらの１種または２種以上を用い得る。特に、平均長さは好ましくは０．０１〜１００μｍ、より好ましくは０．０５〜１０μｍ、アスペクト比は好ましくは２０〜５００、より好ましくは５０〜２００であるものを好適に用いることができる。   The adhesive layer contains a hydrophilic layered silicate. The hydrophilic layered silicate refers to a clay mineral having a crystal structure mainly by stacking clay layers having a two-dimensional structure. In addition, hydrophilic layered silicate swells when added in a solvent and has the property that the distance between each layer increases, and also has the property that ions and molecules can be taken in between layers while maintaining its structure. . The hydrophilic layered silicate used in the present invention is not particularly limited as long as it is a hydrophilic layered silicate dispersible in a water-dispersed acrylic pressure-sensitive adhesive. For example, smectite, saponite, sauconite, stevensite, hectorite , Margarite, talc, phlogopite, chrysotile, chlorite, vermiculite, kaolinite, muscovite, zansophyllite, dickite, nacrite, pyrophyllite, montmorillonite, beidellite, nontronite, tetrasilic mica, sodium teniolite , Antigolite, halloysite and the like. The hydrophilic layered silicate may be either a natural product or a synthetic product, and one or more of these may be used. Particularly, those having an average length of preferably 0.01 to 100 μm, more preferably 0.05 to 10 μm, and an aspect ratio of preferably 20 to 500, more preferably 50 to 200 can be suitably used.

前記親水性層状珪酸塩の含有量は、特に限定されるものではないが、被着体に応じて、耐熱性が得られるよう添加量が適宜に決定される。たとえば、本発明の耐熱性粘着テープにおいて、粘着剤１００重量部に対しては、通常好ましくは４０重量部以下、さらに好ましくは３０重量部以下に配合することにより耐熱性を発現させることが可能となる。４０重量部より多いと、粘着剤の粘着特性を喪失させるおそれがある。また、１重量部未満では耐熱性が発現しにくいことから、好ましくは１重量部以上、より好ましくは１０重量部以上である。このため添加量を目安に剥離力に応じた調整をすることが望ましい。ここで親水性層状珪酸塩を配合する粘着剤とは、例えば粘着剤のみからなるものをいう。   Although content of the said hydrophilic layered silicate is not specifically limited, The addition amount is suitably determined so that heat resistance may be obtained according to a to-be-adhered body. For example, in the heat-resistant pressure-sensitive adhesive tape of the present invention, heat resistance can be expressed by blending in an amount of preferably 40 parts by weight or less, more preferably 30 parts by weight or less, with respect to 100 parts by weight of the pressure-sensitive adhesive. Become. If it is more than 40 parts by weight, the adhesive properties of the adhesive may be lost. Moreover, since heat resistance is hard to express if it is less than 1 part by weight, it is preferably 1 part by weight or more, more preferably 10 parts by weight or more. For this reason, it is desirable to make adjustments according to the peel force with the addition amount as a guide. Here, the pressure-sensitive adhesive containing the hydrophilic layered silicate refers to, for example, a pressure-sensitive adhesive alone.

また本発明の粘着層に用いられる粘着剤は、耐熱性を有するものであれば特に制限されず、例えば、アクリル系粘着剤、ゴム系粘着剤、シリコーン系粘着剤等が挙げられる。さらにアクリル系粘着剤としては、水分散型アクリル系粘着剤等が好適に用いられる。   The pressure-sensitive adhesive used in the pressure-sensitive adhesive layer of the present invention is not particularly limited as long as it has heat resistance, and examples thereof include acrylic pressure-sensitive adhesives, rubber-based pressure-sensitive adhesives, and silicone-based pressure-sensitive adhesives. Further, as the acrylic pressure-sensitive adhesive, a water-dispersed acrylic pressure-sensitive adhesive or the like is preferably used.

本発明に用いられる水分散型アクリル系粘着剤は、アルキル基の炭素数が４〜１２の（メタ）アクリル酸アルキルエステルを主成分とし、かつカルボキシル基含有単量体を含有する単量体を、乳化剤の存在下に乳化重合することにより得られる共重合体エマルションを含有する。   The water-dispersed acrylic pressure-sensitive adhesive used in the present invention is a monomer comprising a (meth) acrylic acid alkyl ester having an alkyl group having 4 to 12 carbon atoms as a main component and a carboxyl group-containing monomer. And a copolymer emulsion obtained by emulsion polymerization in the presence of an emulsifier.

アルキル基の炭素数が、４〜１２の（メタ）アクリル酸アルキルエステルは、アクリル酸またはメタクリル酸と炭素数が、４〜１２のアルコールとのエステルであって、具体的には、（メタ）アクリル酸ブチル、（メタ)アクリル酸２−エチルへキシル、（メタ)アクリル酸イソノニル、（メタ）アクリル酸ラウリル、（メタ）アクリル酸シクロペンチル、（メタ）アクリル酸シクロヘキシル、（メタ）アクリル酸イソボロニルなどが挙げられ、これらの中からその１種または２種以上が用いられる。   The alkyl group having 4 to 12 carbon atoms in the alkyl group (meth) acrylic acid alkyl ester is an ester of acrylic acid or methacrylic acid and an alcohol having 4 to 12 carbon atoms, specifically, (meth) Butyl acrylate, 2-ethylhexyl (meth) acrylate, isononyl (meth) acrylate, lauryl (meth) acrylate, cyclopentyl (meth) acrylate, cyclohexyl (meth) acrylate, isobornyl (meth) acrylate, etc. Among these, one or more of them are used.

水分散型アクリル系粘着剤成分である共重合体エマルションを構成する単量体中には、アルキル基の炭素数が４〜１２の（メタ）アクリル酸アルキルエステルのほかに、被着体への接着力を向上させること、得られる共重合体エマルションを後架橋するための架橋点を導入すること、粘着剤の凝集力を高めること、中和によって機械的安定性を向上させることの少なくとも1つの達成を目的とし、上記(メタ)アクリル酸アルキルエステルと共重合可能な官能基含有単量体としてカルボキシル基含有単量体を含有している。カルボキシル基含有単量体としては、アクリル酸、メタクリル酸、イタコン酸、マレイン酸、クロトン酸などが挙げられる。これらの中からその１種または２種以上が用いられる。   In the monomer constituting the copolymer emulsion which is a water-dispersed acrylic pressure-sensitive adhesive component, in addition to (meth) acrylic acid alkyl ester having 4 to 12 carbon atoms in the alkyl group, At least one of improving adhesive strength, introducing cross-linking points for post-crosslinking the resulting copolymer emulsion, increasing cohesive strength of the pressure-sensitive adhesive, and improving mechanical stability by neutralization For the purpose of achievement, a carboxyl group-containing monomer is contained as a functional group-containing monomer copolymerizable with the above (meth) acrylic acid alkyl ester. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, itaconic acid, maleic acid, and crotonic acid. Among these, one or more of them are used.

また、被着体への接着力を向上させること、得られる共重合体エマルションを後架橋するための架橋点を導入すること、粘着剤の凝集力を高めることの少なくとも1つの達成を目的として、上記成分と共重合可能なカルボキシル基以外の他の官能基含有単量体や改質用単量体を使用してもよい。   In addition, for the purpose of improving at least one of improving the adhesive force to the adherend, introducing a crosslinking point for post-crosslinking the resulting copolymer emulsion, and increasing the cohesive strength of the pressure-sensitive adhesive, Other functional group-containing monomers other than the carboxyl group copolymerizable with the above components and monomers for modification may be used.

上述のカルボキシル基以外の他の官能基含有単量体としては、（メタ）アクリル酸２−ヒドロキシエチル、（メタ）アクリル酸２−ヒドロキシプロピル、（メタ）アクリル酸２−ヒドロキシブチルなどの水酸基含有単量体、（メタ）アクリルアミド、Ｎ、Ｎ−ジメチル（メタ）アクリルアミド、Ｎ−メチロール（メタ）アクリルアミド、Ｎ−メトキシメチル（メタ）アクリルアミド、Ｎ−ブトキシメチル（メタ）アクリルアミドなどのアミド基含有単量体、（メタ）アクリル酸２−（Ｎ、Ｎ−ジメチルアミノ）エチルなどのアミノ基含有単量体、（メタ）アクリル酸グリシジルなどのグリシジル基含有単量体、（メタ）アクリル酸プロピルトリメトキシシラン、（メタ）アクリル酸プロピルジメトキシシラン、（メタ）アクリル酸プロピルトリエトキシシランなどのアルコキシシリル基含有単量体、（メタ）アクリロニトリル、Ｎ−（メタ）アクリロイルモルホリン、Ｎ−ビニル−２−ピロリドンなどが挙げられる。これらの官能基含有単量体は、その1種を単独でまたは２種以上を使用できる。   Examples of other functional group-containing monomers other than the above-mentioned carboxyl groups include hydroxyl groups such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, and 2-hydroxybutyl (meth) acrylate. Monomers, amide group-containing single groups such as (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methoxymethyl (meth) acrylamide, N-butoxymethyl (meth) acrylamide Monomers, amino group-containing monomers such as 2- (N, N-dimethylamino) ethyl (meth) acrylate, glycidyl group-containing monomers such as glycidyl (meth) acrylate, propyltrimethyl (meth) acrylate Methoxysilane, (meth) acrylic acid propyldimethoxysilane, (meth) acrylic acid propylt Alkoxysilyl group-containing monomers such as silane, (meth) acrylonitrile, N- (meth) acryloyl morpholine, N- vinyl-2-pyrrolidone. These functional group-containing monomers can be used alone or in combination of two or more.

上述の改質用単量体としては、（メタ)アクリル酸メチル、（メタ）アクリル酸エチル、（メタ）アクリル酸イソプロピルなどのアルキル基の炭素数が１〜３の（メタ）アクリル酸アルキルエステル、（メタ）アクリル酸トリデシル、（メタ）アクリル酸ステアリルなどのアルキル基の炭素数が１３〜１８の（メタ）アクリル酸アルキルエステル、酢酸ビニル、スチレン、ビニルトルエンなどがあげられる。また、ネオペンチルグリコールジ（メタ）アクリレート、ヘキサンジオールジ（メタ）アクリレート、プロピレングリコールジ（メタ）アクリレート、トリメチロールプロパントリ（メタ）アクリレート、テトラメチロールメタンテトラ（メタ）アクリレート、ジペンタエリスリトールヘキサ（メタ）アクリレート等の二つ以上の重合性官能基を有するものが挙げられる。これら改質用単量体もその1種を単独でまたは２種以上を使用できる。   Examples of the modifying monomer include (meth) acrylic acid alkyl esters having 1 to 3 carbon atoms in the alkyl group, such as methyl (meth) acrylate, ethyl (meth) acrylate, and isopropyl (meth) acrylate. And (meth) acrylic acid triester, (meth) acrylic acid stearyl (meth) acrylic acid alkyl group having 13 to 18 carbon atoms (meth) acrylic acid alkyl ester, vinyl acetate, styrene, vinyltoluene and the like. Also, neopentyl glycol di (meth) acrylate, hexanediol di (meth) acrylate, propylene glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, dipentaerythritol hexa ( Examples thereof include those having two or more polymerizable functional groups such as (meth) acrylate. These modifying monomers can be used alone or in combination of two or more.

これらの単量体は、アルキル基の炭素数が４〜１２の（メタ)アクリル酸アルキルエステルと、カルボキシル基含有単量体が、上述の目的を満足し、かつ使用するカルボキシル基含有単量体、カルボキシル基以外の官能基含有単量体、及び改質用単量体の全含有単量体を合計として、例えば親水性層状珪酸塩のみを含有する粘着剤１００重量部に対して添加する場合、好ましくは５０重量部以下、より好ましくは２０重量部以下、さらに好ましくは０．５〜１０重量部の割合で使用する。   These monomers are a (meth) acrylic acid alkyl ester having 4 to 12 carbon atoms in the alkyl group and a carboxyl group-containing monomer satisfying the above-mentioned purpose and used. In the case of adding a monomer containing a functional group other than a carboxyl group, and a monomer containing all of a modifying monomer as a total, for example, to 100 parts by weight of an adhesive containing only a hydrophilic layered silicate , Preferably 50 parts by weight or less, more preferably 20 parts by weight or less, still more preferably 0.5 to 10 parts by weight.

水分散型アクリル系粘着剤を乳化重合する際に使用する乳化剤としては、乳化重合において用いられるアニオン系乳化剤やノニオン系乳化剤を特に制限なく使用できる。たとえば、ラウリル硫酸ナトリウム、ラウリル硫酸アンモニウム、ドデシルベンゼンスルホン酸ナトリウム、ポリオキシエチレンアクリル硫酸ナトリウム、ポリオキシエチレンアルキルエーテル硫酸ナトリウム、ポリオキシエチレンアルキルフェニルエーテル硫酸ナトリウムなどのアニオン系乳化剤、ポリオキシエチレンアルキルエーテル、ポリオキシエチレンアルキルフェニルエーテルなどのノニオン系乳化剤などが挙げられる。乳化剤の含有量は、例えば親水性層状珪酸塩のみを含有する粘着剤１００重量部に対して添加され、０．２〜１０重量部が好ましく、０．５〜５重量部がより好ましい。   As an emulsifier used in emulsion polymerization of the water-dispersed acrylic pressure-sensitive adhesive, an anionic emulsifier and a nonionic emulsifier used in the emulsion polymerization can be used without particular limitation. For example, anionic emulsifiers such as sodium lauryl sulfate, ammonium lauryl sulfate, sodium dodecylbenzene sulfonate, sodium polyoxyethylene acrylic sulfate, sodium polyoxyethylene alkyl ether sulfate, sodium polyoxyethylene alkyl phenyl ether sulfate, polyoxyethylene alkyl ether, Nonionic emulsifiers such as polyoxyethylene alkylphenyl ether are listed. The content of the emulsifier is added, for example, to 100 parts by weight of the pressure-sensitive adhesive containing only the hydrophilic layered silicate, preferably 0.2 to 10 parts by weight, and more preferably 0.5 to 5 parts by weight.

本発明で用いられる水分散型アクリル系粘着剤は、上記共重合体エマルションを主剤成分とし、これに必要により、架橋剤を含有させることができる。例えば、イソシアネート系架橋剤、エポキシ系架橋剤、ヒドラジル系化合物などが挙げられる。架橋剤の含有量は、特に制限されるものではないが、粘着層全体としてあまりに柔らかい場合は、ワイヤボンディング時にボンディングワイヤを接続しようとしても、粘着テープを貼り合わせリードフレームを十分に固定しておくことが粘着剤の弾性力によって阻害され、結果的に加圧による圧着エネルギーを緩和してしまい、ボンディング不良が発生してしまうおそれがある。架橋剤の含有量は、例えば親水性層状珪酸塩と前記共重合体エマルションを含有する水分散型アクリル系粘着剤１００重量部に対して０．１〜１５重量部添加するのが好ましく、１．０〜１０重量部添加するのがより好ましい。このような共重合体エマルションを含有する水分散型アクリル系粘着剤は適切な粘着力やせん断貯蔵弾性率を得やすいことから、本発明に最も好適な粘着剤である。また本発明の共重合エマルション含有水分散アクリル系粘着剤は、高温下でも分解されにくくなるので、発生ガス量を抑えること、半導体チップの汚染または損傷を防ぐことができる。   The water-dispersed acrylic pressure-sensitive adhesive used in the present invention contains the above-mentioned copolymer emulsion as a main ingredient component, and can contain a crosslinking agent if necessary. For example, an isocyanate type crosslinking agent, an epoxy type crosslinking agent, a hydrazyl type compound, etc. are mentioned. The content of the cross-linking agent is not particularly limited, but if the entire adhesive layer is too soft, even if trying to connect the bonding wire during wire bonding, the adhesive tape is bonded and the lead frame is sufficiently fixed. This is hindered by the elastic force of the pressure-sensitive adhesive, and as a result, the pressure-bonding energy due to pressurization is relaxed, and bonding failure may occur. The content of the crosslinking agent is preferably 0.1 to 15 parts by weight with respect to 100 parts by weight of the water-dispersed acrylic pressure-sensitive adhesive containing the hydrophilic layered silicate and the copolymer emulsion, for example. It is more preferable to add 0 to 10 parts by weight. The water-dispersed acrylic pressure-sensitive adhesive containing such a copolymer emulsion is the most preferable pressure-sensitive adhesive for the present invention because it can easily obtain appropriate adhesive strength and shear storage elastic modulus. In addition, the copolymer emulsion-containing water-dispersed acrylic pressure-sensitive adhesive of the present invention is difficult to be decomposed even at high temperatures, so that the amount of generated gas can be suppressed and contamination or damage to the semiconductor chip can be prevented.

また、耐熱性粘着テープを構成する粘着剤は、その粘着機能の面からある程度の弾性を有するのが好ましい。一方、粘着層全体としてあまりに柔らかい場合は、ワイヤボンディング時にボンディングワイヤを接続しようとしても、耐熱性粘着テープを貼りあわせたリードフレームを十分に固定しておくことが粘着剤の弾性力によって阻害され、結果的に加圧による圧着エネルギーを緩和してしまい、ボンディング不良が発生してしまう。   Moreover, it is preferable that the adhesive which comprises a heat resistant adhesive tape has a certain amount of elasticity from the surface of the adhesive function. On the other hand, if the adhesive layer as a whole is too soft, even when trying to connect the bonding wire during wire bonding, it is hindered by the elastic force of the adhesive that the lead frame bonded with the heat-resistant adhesive tape is sufficiently fixed, As a result, pressure bonding energy due to pressurization is relaxed, and bonding failure occurs.

このようなボンディング不良を引き起こさず、かつ封止工程では樹脂漏れを防止できる十分な粘着力を確保する、いわば相反する性能を確保するために、粘弾性スペクトロメーターにより、周波数１Ｈｚ、昇温速度５℃／分にて測定された、２００℃における粘着剤のせん断貯蔵弾性率が、好ましくは１．０×１０4 Ｐａ以上、より好ましくは、１．０×１０5 Ｐａ以上とするのが、粘着層全体としてのクッション性をわずかにとどめることが可能になり、ワイヤボンディング強度が得られ好ましい。なお、前記せん断貯蔵弾性率が大きくなりすぎると、耐熱性粘着テープのリードフレームへの段差追従性が低下する傾向があり、モールド時に封止樹脂がブリードを生じるおそれがあることから、前記せん断貯蔵弾性率は１．０×１０8 Ｐａ以下であるのが好ましく、０．５×１０8 Ｐａ以下であるのがより好ましい。 In order to ensure sufficient adhesive strength that does not cause such bonding failure and prevent resin leakage in the sealing process, in other words, to ensure contradictory performance, a viscoelastic spectrometer is used with a frequency of 1 Hz and a heating rate of 5 It is preferable that the shear storage elastic modulus of the pressure-sensitive adhesive at 200 ° C. measured at ℃ / min is preferably 1.0 × 10 4 Pa or more, more preferably 1.0 × 10 5 Pa or more. The cushioning property of the entire layer can be kept slightly, and wire bonding strength can be obtained, which is preferable. If the shear storage elastic modulus is too large, the step followability of the heat-resistant adhesive tape to the lead frame tends to decrease, and the sealing resin may cause bleed during molding. The elastic modulus is preferably 1.0 × 10 8 Pa or less, and more preferably 0.5 × 10 8 Pa or less.

本発明の粘着層の厚みは特に限定されるものではないが、ワイヤボンディング時に粘着層全体としてのクッション性をわずかにとどめるために厚すぎる構成は好ましくなく、一方で封止工程においても十分なシール性を得るためにはある程度の厚さが必要である。このような相反する両特性をバランスよく達成できる粘着層の厚みは、好ましくは１〜５０μｍ、より好ましくは５〜２５μｍであることが好適である。   The thickness of the pressure-sensitive adhesive layer of the present invention is not particularly limited, but a configuration that is too thick is not preferable in order to keep the cushioning property of the pressure-sensitive adhesive layer as a whole at the time of wire bonding. A certain amount of thickness is necessary to obtain the properties. The thickness of the pressure-sensitive adhesive layer that can achieve such conflicting properties in a balanced manner is preferably 1 to 50 μm, more preferably 5 to 25 μm.

本発明の耐熱性粘着テープは、基材層の上へ直接またはセパレーター上の形成した粘着層を基材上に移着して間接的に粘着層を形成してなるものである。このような耐熱性粘着テープを調製するには、粘着剤を基材もしくはセパレーターに薄層塗布し、乾燥すればよい。また、本発明の粘着テープの「耐熱性」とは、加熱プロセス後、粘着テープを被着体から引剥した際に目視できる粘着剤の残渣がないことをいう。   The heat-resistant pressure-sensitive adhesive tape of the present invention is formed by transferring the pressure-sensitive adhesive layer formed directly on the base material layer or on the separator onto the base material and indirectly forming the pressure-sensitive adhesive layer. In order to prepare such a heat-resistant pressure-sensitive adhesive tape, a thin layer of the pressure-sensitive adhesive may be applied to a substrate or a separator and dried. In addition, the “heat resistance” of the pressure-sensitive adhesive tape of the present invention means that there is no pressure-sensitive adhesive residue visible when the pressure-sensitive adhesive tape is peeled off from the adherend after the heating process.

前記半導体装置の製造方法において用いる耐熱性粘着テープは、１７５℃雰囲気下にてＪＩＳ Ｚ０２３７に準じて測定される粘着力が０．２Ｎ／１９ｍｍ幅以上が好ましく、０．３Ｎ／１９ｍｍ幅以上がより好ましく、０．５Ｎ／１９ｍｍ幅以上がさらに好ましい。０．２Ｎ／１９ｍｍ幅未満になると粘着力が低すぎるため、被着体と粘着テープとの間で剥離が生じる。   The heat resistant adhesive tape used in the manufacturing method of the semiconductor device preferably has an adhesive strength measured in accordance with JIS Z0237 in an atmosphere of 175 ° C. of 0.2 N / 19 mm width or more, more preferably 0.3 N / 19 mm width or more. Preferably, 0.5 N / 19 mm width or more is more preferable. When the width is less than 0.2 N / 19 mm, the adhesive strength is too low, and peeling occurs between the adherend and the adhesive tape.

本発明の前記耐熱性粘着テープの粘着力は、粘着層の面をステンレス板に貼り合わせた状態で２００℃にて１時間加熱した後に、ＪＩＳ Ｚ０２３７に準じて測定される２３℃の粘着力が５．０Ｎ／１９ｍｍ幅以下である場合に、封止工程での樹脂漏れ防止に必要な粘着力が確実に得られると共に、封止工程後の引き剥がしが容易になり、封止樹脂の破損も生じなくなる。前記粘着力は、より好ましくは２．０Ｎ／１９ｍｍ幅以下である。粘着力が５．０Ｎ／１９ｍｍ幅より大きいと、粘着層とリードフレームもしくは封止樹脂との粘着力が強固なため、粘着層を無理に引き剥がすと粘着層の表層が完成したパッケージに残ってしまい、良好なパッケージが得難い。なお、前記粘着力は、封止工程での樹脂漏れを好適に防止するには、０．０５Ｎ／１９ｍｍ幅以上が好ましく、０．１Ｎ／１９ｍｍ幅以上がさらに好ましい。   The heat-resistant adhesive tape of the present invention has an adhesive strength of 23 ° C. measured according to JIS Z0237 after heating at 200 ° C. for 1 hour with the surface of the adhesive layer bonded to a stainless steel plate. When the width is 5.0 N / 19 mm or less, the adhesive force necessary for preventing resin leakage in the sealing process can be reliably obtained, and peeling after the sealing process becomes easy, and the sealing resin is also damaged. No longer occurs. The adhesive strength is more preferably 2.0 N / 19 mm width or less. If the adhesive strength is larger than 5.0 N / 19 mm width, the adhesive strength between the adhesive layer and the lead frame or the sealing resin is strong, so if the adhesive layer is forcibly peeled off, the surface layer of the adhesive layer remains in the completed package. Therefore, it is difficult to obtain a good package. The adhesive strength is preferably 0.05 N / 19 mm width or more, and more preferably 0.1 N / 19 mm width or more in order to suitably prevent resin leakage in the sealing step.

次に本発明の耐熱性粘着テープを用いた半導体装置の製造について図面を参照しながら説明する。図１は、本発明の半導体装置の製造方法の一例の工程図である。   Next, the manufacture of a semiconductor device using the heat-resistant adhesive tape of the present invention will be described with reference to the drawings. FIG. 1 is a process chart of an example of a method for manufacturing a semiconductor device of the present invention.

本発明の半導体装置の製造方法は、図１に示すように、半導体チップ１５の搭載工程と、封止樹脂１７による封止工程と、封止された構造物２１を切断する切断工程とを少なくとも含むものである。   As shown in FIG. 1, the method for manufacturing a semiconductor device of the present invention includes at least a mounting process of a semiconductor chip 15, a sealing process with a sealing resin 17, and a cutting process for cutting the sealed structure 21. Is included.

搭載工程は、図１（ａ）〜（ｂ）に示すように、アウターパッド側（各図の下側）に耐熱性粘着テープ２０を貼り合わせた金属製のリードフレーム１０のダイパッド１１ｃ上に半導体チップ１５をボンディングする工程である。   As shown in FIGS. 1A to 1B, the mounting process is performed on a die pad 11 c of a metal lead frame 10 in which a heat-resistant adhesive tape 20 is bonded to the outer pad side (the lower side of each figure). This is a step of bonding the chip 15.

リードフレーム１０とは、例えば銅などの金属を素材としてＱＦＮの端子パターンが刻まれたものであり、その電気接点部分には、銀，ニッケル，パラジウム，金などの素材で被覆（めっき）されている場合もある。リードフレーム１０の厚みは、１００〜３００μｍが一般的である。なお、部分的にエッチングなどで薄く加工されている部分は、この限りではない。   The lead frame 10 is formed by engraving a terminal pattern of QFN using, for example, a metal such as copper, and the electrical contact portion is coated (plated) with a material such as silver, nickel, palladium, or gold. There may be. The thickness of the lead frame 10 is generally 100 to 300 μm. Note that this does not apply to portions that are partially thinned by etching or the like.

リードフレーム１０は、後の切断工程にて切り分けやすいよう、個々のＱＦＮの配置パターンが整然と並べられているものが好ましい。例えば図２に示すように、リードフレーム１０上に縦横のマトリックス状に配列された形状などは、マトリックスＱＦＮあるいはＭＡＰ−ＱＦＮなどと呼ばれ、もっとも好ましいリードフレーム形状のひとつである。とくに近年では、生産性の観点から1枚のリードフレーム中に配列されるパッケージ数を多くするため、これらの個々のパッケージが細密化されるばかりでなく、一つの封止部分で多数のパッケージを封止できるよう、これらの配列数も大きく拡大してきている。   The lead frame 10 is preferably one in which arrangement patterns of individual QFNs are arranged in an orderly manner so that the lead frame 10 can be easily separated in a subsequent cutting step. For example, as shown in FIG. 2, a shape arranged in a vertical and horizontal matrix on the lead frame 10 is called a matrix QFN or MAP-QFN, and is one of the most preferable lead frame shapes. In particular, in recent years, in order to increase the number of packages arranged in one lead frame from the viewpoint of productivity, not only these individual packages are miniaturized, but also a large number of packages can be formed by one sealing part. The number of these arrays has been greatly expanded so that sealing can be performed.

図２（ａ）〜（ｂ）に示すように、リードフレーム１０のパッケージパターン領域１１には、隣接した複数の開口１１ａに端子部１１ｂを複数配列した、ＱＦＮの基板デザインが整然と配列されている。一般的なＱＦＮの場合、各々の基板デザイン（図２（ａ）の格子で区分された領域）は、開口１１ａの周囲に配列された、アウターリード面を下側に有する端子部１１ｂと、開口１１ａの中央に配置されるダイパッド１１ｃと、ダイパッド１１ｃを開口１１ａの４角に支持させるダイバー１１ｄとで構成される。   As shown in FIGS. 2A to 2B, the QFN substrate design in which a plurality of terminal portions 11b are arranged in a plurality of adjacent openings 11a is arranged in the package pattern region 11 of the lead frame 10 in an orderly manner. . In the case of a general QFN, each board design (region divided by the lattice in FIG. 2A) is arranged around the opening 11a, the terminal portion 11b having the outer lead surface on the lower side, and the opening The die pad 11c is arranged at the center of 11a, and the diver 11d supports the die pad 11c at the four corners of the opening 11a.

耐熱性粘着テープ２０は、少なくともパッケージパターン領域１１より外側に貼着され、樹脂封止される樹脂封止領域の外側の全周を含む領域に貼着するのが好ましい。リードフレーム１０は、通常、樹脂封止時の位置決めを行うための、ガイドピン用孔１３を端辺近傍に有しており、それを塞がない領域に貼着するのが好ましい。また、樹脂封止領域はリードフレーム１０の長手方向に複数配置されるため、それらの複数領域を渡るように連続して耐熱性粘着テープ２０を貼着するのが好ましい。   It is preferable that the heat-resistant adhesive tape 20 is attached at least outside the package pattern region 11 and attached to a region including the entire circumference outside the resin-sealed region to be resin-sealed. The lead frame 10 usually has a guide pin hole 13 in the vicinity of the end side for positioning at the time of resin sealing, and it is preferable that the lead frame 10 is adhered to a region where it is not blocked. Further, since a plurality of resin sealing regions are arranged in the longitudinal direction of the lead frame 10, it is preferable that the heat-resistant adhesive tape 20 is continuously attached so as to cross the plurality of regions.

上記のようなリードフレーム１０上に、半導体チップ１５、すなわち半導体集積回路部分であるシリコンウエハ・チップが搭載される。リードフレーム１０上にはこの半導体チップ１５を固定するためダイパッド１１ｃと呼ばれる固定エリアが設けられており、このダイパッド１１ｃヘのボンディング（固定）の方法は導電性ペースト１９、接着テープ、接着剤など各種の方法が用いられる。導電性ペーストや熱硬化性の接着剤等を用いてダイボンドする場合、一般的に１５０〜２００℃程度の温度で３０分〜９０分程度加熱キュアする。   On the lead frame 10 as described above, a semiconductor chip 15, that is, a silicon wafer chip which is a semiconductor integrated circuit portion is mounted. A fixing area called a die pad 11c is provided on the lead frame 10 to fix the semiconductor chip 15, and various bonding methods such as a conductive paste 19, an adhesive tape, and an adhesive can be used. The method is used. When die bonding is performed using a conductive paste, a thermosetting adhesive, or the like, generally heat curing is performed at a temperature of about 150 to 200 ° C. for about 30 to 90 minutes.

一般的には、これに続いて、前記リードフレームの端子部先端と前記半導体チップ上の電極パッドとをボンディングワイヤで電気的に接続する結線工程が行なわれる。結線工程は、図１（ｃ）に示すように、リードフレーム１０の端子部１１ｂ（インナーリード）の先端と半導体チップ１５上の電極パッド１５ａとをボンディングワイヤ１６で電気的に接続する工程である。ボンディングワイヤ１６としては、例えば金線あるいはアルミ線などが用いられる。一般的には１２０〜２５０℃に加熱された状態で、超音波による振動エネルギーと印加加圧による圧着エネルギーの併用により結線される。その際、リードフレーム１０に貼着した耐熱性粘着テープ２０面を真空吸引することで、ヒートブロックに確実に固定することができる。なお、上記では半導体チップ１５をフェイスアップ実装して結線工程を行なう場合を示したが、半導体チップ１５をフェイスダウン実装した場合には、リフロー工程が適宜に施される。   In general, this is followed by a connection step in which the tip of the lead frame terminal portion and the electrode pad on the semiconductor chip are electrically connected by a bonding wire. As shown in FIG. 1C, the connection process is a process of electrically connecting the tips of the terminal portions 11b (inner leads) of the lead frame 10 and the electrode pads 15a on the semiconductor chip 15 with bonding wires 16. . For example, a gold wire or an aluminum wire is used as the bonding wire 16. In general, in a state heated to 120 to 250 ° C., the wire is connected by a combination of vibration energy by ultrasonic waves and pressure energy by applying pressure. At that time, the surface of the heat-resistant adhesive tape 20 adhered to the lead frame 10 can be securely fixed to the heat block by vacuum suction. In the above description, the case where the semiconductor chip 15 is mounted face-up and the connection process is performed is shown. However, when the semiconductor chip 15 is mounted face-down, the reflow process is appropriately performed.

封止工程は、図１（ｄ）に示すように、封止樹脂１７により半導体チップ１５側を片面封止する工程である。封止工程は、リードフレーム１０に搭載された半導体チップ１５やボンディングワイヤ１６を保護するために行われ、とくにエポキシ系の樹脂をはじめとした封止樹脂１７を用いて金型中で成型されるのが代表的である。その際、図３に示すように、複数のキャビティ１２を有する上金型１８ａと下金型１８ｂからなる金型１８を用いて、複数の封止樹脂１７にて同時に封止工程が行われるのが一般的である。具体的には、例えば樹脂封止時の加熱温度は１７０〜１８０℃であり、この温度で数分間キュアされた後、更に、ポストモールドキュアが数時間行われる。なお、耐熱性粘着テープ２０はポストモールドキュアの前に剥離するのが好ましい。   The sealing step is a step of sealing one side of the semiconductor chip 15 with a sealing resin 17 as shown in FIG. The sealing process is performed to protect the semiconductor chip 15 and the bonding wire 16 mounted on the lead frame 10 and is molded in a mold using a sealing resin 17 including an epoxy resin in particular. Is typical. At that time, as shown in FIG. 3, a sealing process is simultaneously performed with a plurality of sealing resins 17 using a mold 18 including an upper mold 18a having a plurality of cavities 12 and a lower mold 18b. Is common. Specifically, for example, the heating temperature at the time of resin sealing is 170 to 180 ° C. After curing at this temperature for several minutes, post mold curing is further performed for several hours. The heat resistant adhesive tape 20 is preferably peeled before post mold curing.

切断工程は、図１（ｅ）に示すように、封止された構造物２１を個別の半導体装置２１ａに切断する工程である。一般的にはダイサーなどの回転切断刃を用いて封止樹脂１７の切断部１７ａをカットする切断工程が挙げられる。   The cutting step is a step of cutting the sealed structure 21 into individual semiconductor devices 21a as shown in FIG. Generally, there is a cutting step of cutting the cutting portion 17a of the sealing resin 17 using a rotary cutting blade such as a dicer.

本発明の耐熱性粘着テープ２０は、基材層（２０ａ）と、親水性層状珪酸塩と粘着剤を含む粘着層（２０ｂ）とから少なくとも構成されている。   The heat resistant pressure-sensitive adhesive tape 20 of the present invention comprises at least a base material layer (20a) and a pressure-sensitive adhesive layer (20b) containing a hydrophilic layered silicate and a pressure-sensitive adhesive.

耐熱性粘着テープ２０は、あらかじめリードフレーム１０に貼着されていることから、前述の製造工程において加熱されることになる。たとえば、半導体チップ１５をダイボンドする場合、一般的に１５０〜２００℃程度の温度で３０分〜９０分程度加熱キュアする。ワイヤボンディングを行う場合は、例えば１２０〜２５０℃程度の温度で行われるが、一枚のリードフレーム１０からたくさんの半導体装置を製造する場合は、すべての半導体装置に対するボンディングが終了するまでの時間として、リードフレーム１枚あたり１時間以上を要することも考えられる。さらに、樹脂封止する場合も、樹脂が十分に溶融している温度である必要性から１７５℃程度の温度をかけることになる。したがって、耐熱性粘着テープ２０の基材層は、こういった加熱条件に対して耐熱性を満足する素材が用いられる。   Since the heat-resistant adhesive tape 20 is attached to the lead frame 10 in advance, it is heated in the manufacturing process described above. For example, when the semiconductor chip 15 is die-bonded, it is generally heated and cured at a temperature of about 150 to 200 ° C. for about 30 to 90 minutes. When wire bonding is performed, for example, at a temperature of about 120 to 250 ° C., when many semiconductor devices are manufactured from one lead frame 10, the time until bonding for all the semiconductor devices is completed. It can be considered that one lead frame or more is required for one hour or more. Further, in the case of resin sealing, a temperature of about 175 ° C. is applied because the resin needs to be sufficiently melted. Therefore, the base material layer of the heat resistant pressure-sensitive adhesive tape 20 is made of a material that satisfies heat resistance with respect to such heating conditions.

このように、本発明においては、耐熱性粘着テープとして耐熱性を有する基材層を備えたものを使用している。この為、結線工程等で加熱されても、耐熱性粘着テープは熱膨張による反りやリードフレームからの剥離を生じ難い。また、耐熱性粘着テープは、高いシール効果を発揮することができる。よって、その様な耐熱性粘着テープがリードフレームのアウターパッド側に貼り付けられると、リードフレームの開口している部分も確実に塞ぐことができる。その結果、封止工程に於いて使用する封止樹脂が当該開口部分などから漏れるのを防止できる。従って、本発明の耐熱性粘着テープを用いることにより、歩留まりを向上して半導体装置を製造することができる。   Thus, in this invention, the thing provided with the base material layer which has heat resistance is used as a heat resistant adhesive tape. For this reason, even when heated in the connection process or the like, the heat-resistant adhesive tape is unlikely to cause warpage due to thermal expansion or peeling from the lead frame. Moreover, the heat resistant adhesive tape can exhibit a high sealing effect. Therefore, when such a heat-resistant adhesive tape is affixed to the outer pad side of the lead frame, the open portion of the lead frame can be reliably closed. As a result, the sealing resin used in the sealing process can be prevented from leaking from the opening. Therefore, by using the heat resistant adhesive tape of the present invention, a semiconductor device can be manufactured with improved yield.

以下、本発明の構成と効果を具体的に示す実施例等について説明する。   Examples and the like specifically showing the configuration and effects of the present invention will be described below.

実施例１
２５μｍ厚のポリイミドフィルム（東レデュポン製：カプトン１００Ｈ）を基材層として用いた。親水性層状珪酸塩として合成スメクタイト（コープケミカル（株）製、ルーセンタイト ＳＰＮ 平均粒径 ５０ｎｍ）を２０重量部含有したアクリル酸ｎ−ブチル１００重量部に対して、アクリル酸２重量部を単量体、ポリオキシエチレンラウリル硫酸ナトリウム２重量部を乳化剤とする共重合体エマルションを含有する、水分散型アクリル系粘着剤を用いて、さらにこの親水性層状珪酸塩と共重合体エマルションを含有する水分散型アクリル系粘着剤１００重量部に対して、エポキシ系架橋剤（三菱ガス化学製、Ｔｅｔａｄ−Ｃ）を０．５重量部添加した粘着剤を調製した。この親水性層状珪酸塩と共重合体エマルションを含有する水分散型アクリル系粘着剤を用いて、厚さ１０μｍの粘着層を設けた耐熱性粘着テープを作製した。この親水性層状珪酸塩と共重合体エマルションを含有する水分散型アクリル系粘着剤は、レオメトリック・サイエンティフィック社製のＡＲＥＳを用いて、周波数１Ｈｚ、昇温速度５℃／分、サンプルサイズφ７．９ｍｍのパラレルプレートによるせん断貯蔵弾性モードにて測定したところ、２００℃におけるせん断貯蔵弾性率が１．０×１０６ Ｐａであった。この耐熱性粘着テープの１７５℃雰囲気下の粘着力は０．３２Ｎ／１９幅ｍｍであった。この耐熱性粘着テープは、ステンレス板に貼り合わせた状態で２００℃にて１時間加熱後、ＪＩＳ Ｚ ０２３７に準じて測定された２３℃での粘着力が２．５Ｎ／１９ｍｍ幅であった。 Example 1
A polyimide film having a thickness of 25 μm (manufactured by Toray DuPont: Kapton 100H) was used as the base material layer. A single amount of 2 parts by weight of acrylic acid per 100 parts by weight of n-butyl acrylate containing 20 parts by weight of synthetic smectite (manufactured by Coop Chemical Co., Ltd., Lucentite SPN average particle size 50 nm) as a hydrophilic layered silicate Water containing a hydrophilic emulsion and a copolymer emulsion containing a copolymer emulsion containing 2 parts by weight of sodium polyoxyethylene lauryl sulfate as an emulsifier, and further containing this hydrophilic layered silicate and copolymer emulsion A pressure-sensitive adhesive was prepared by adding 0.5 parts by weight of an epoxy-based crosslinking agent (manufactured by Mitsubishi Gas Chemical Co., Ltd., Tetad-C) to 100 parts by weight of the dispersion-type acrylic pressure-sensitive adhesive. Using this water-dispersed acrylic pressure-sensitive adhesive containing a hydrophilic layered silicate and a copolymer emulsion, a heat-resistant pressure-sensitive adhesive tape provided with a pressure-sensitive adhesive layer having a thickness of 10 μm was produced. This water-dispersed acrylic pressure-sensitive adhesive containing a hydrophilic layered silicate and a copolymer emulsion uses ARES manufactured by Rheometric Scientific, with a frequency of 1 Hz, a heating rate of 5 ° C./min, and a sample size. When measured in a shear storage elastic mode using a φ7.9 mm parallel plate, the shear storage elastic modulus at 200 ° C. was 1.0 × 10 6 Pa. The adhesive strength of the heat resistant adhesive tape in an atmosphere at 175 ° C. was 0.32 N / 19 mm in width. This heat-resistant adhesive tape had an adhesive strength of 2.5 N / 19 mm width at 23 ° C. measured in accordance with JIS Z 0237 after heating at 200 ° C. for 1 hour in a state of being bonded to a stainless steel plate.

この耐熱性粘着テープを、Ｎｉ／ＰｄおよびフラッシュＡｕめっきが施された一辺１６ＰｉｎタイプのＱＦＮが４個×４個に配列された銅製のリードフレームのアウターパッド側に貼り合わせた。このリードフレームのダイパッド部分に半導体チップをエポキシフェノール系の銀ペーストを用いて接着し、１８０℃にて１時間ほどキュアすることで固定した。   This heat-resistant adhesive tape was bonded to the outer pad side of a copper lead frame in which 4 × 4 pieces of 16-pin side QFN with Ni / Pd and flash Au plating were arranged. The semiconductor chip was bonded to the die pad portion of the lead frame using an epoxyphenol-based silver paste and fixed by curing at 180 ° C. for about 1 hour.

つぎに、リードフレームは耐熱性粘着テープ側から真空吸引する形で２００℃に加熱したヒートブロックに固定し、さらにリードフレームの周辺部分をウインドクランパーにて押さえて固定した。これらを、１１５ＫＨｚワイヤボンダー（新川製：ＵＴＣ−３００ＢＩｓｕｐｅｒ）を用いてφ２５μｍの金線（田中貴金属製ＧＭＧ−２５）にて下記の条件でワイヤボンディングを行った。なお、すべてのボンディングを完了するのに約１時間を要した。   Next, the lead frame was fixed to a heat block heated to 200 ° C. by vacuum suction from the heat resistant adhesive tape side, and further, the periphery of the lead frame was fixed by pressing with a wind clamper. These were wire-bonded using a 115 KHz wire bonder (manufactured by Shinkawa: UTC-300BIsuper) and a φ25 μm gold wire (Tanaka Kikinzoku GMG-25) under the following conditions. It took about 1 hour to complete all bonding.

ファーストボンディング加圧：８０ｇ ファーストボンディング超音波強度：５５０ｍＷ ファーストボンディング印加時間：１０ｍｓｅｃ セカンドボンディング加圧：８０ｇ セカンドボンディング超音波強度：５００ｍＷ セカンドボンディング印加時間：８ｍｓｅｃ   First bonding pressure: 80 g First bonding ultrasonic strength: 550 mW First bonding application time: 10 msec Second bonding pressure: 80 g Second bonding ultrasonic strength: 500 mW Second bonding application time: 8 msec

さらにエポキシ系封止樹脂（日東電工製，ＨＣ−３００Ｂ６）により、これらをモールドマシン（ＴＯＷＡ製，Ｍｏｄｅｌ−Ｙ−ｓｅｒｉｅｓ）を用いて、１７５℃で、プレヒート設定３秒、インジェクション時間１２秒、キュア時間９０秒にてモールドした後、耐熱性粘着テープを剥離した。なお、さらに１７５℃にて２時間ほどポストモールドキュアを行って樹脂を十分に硬化させた後、ダイサーによって切断して、個々のＱＦＮタイプ半導体装置を得た。   Furthermore, with an epoxy-based sealing resin (manufactured by Nitto Denko, HC-300B6), these were molded using a mold machine (manufactured by TOWA, Model-Y-series) at 175 ° C., preheating setting 3 seconds, injection time 12 seconds, curing After molding for 90 seconds, the heat-resistant adhesive tape was peeled off. Further, after post-curing at 175 ° C. for about 2 hours to sufficiently cure the resin, it was cut with a dicer to obtain individual QFN type semiconductor devices.

このようにして得られたＱＦＮは、高温下での粘着力を保持し、耐熱性粘着テープを糊残りなく容易に剥がすことができた。また封止樹脂のはみ出しを抑えるマスキング性能も良好である、完成したパッケージに対しても特に著しい付着汚染物などが認められない良好なパッケージを得ることができ、ガスの発生量を抑えることができた。   The QFN thus obtained maintained the adhesive strength at high temperatures, and could easily peel off the heat-resistant adhesive tape without any adhesive residue. In addition, the masking performance that suppresses the protrusion of the sealing resin is also good, and it is possible to obtain a good package with no noticeable adhesion contaminants even on the finished package, and the amount of gas generated can be suppressed. It was.

比較例１
耐熱性粘着テープを貼着していないリードフレーム単体に半導体チップをボンディングし、金型に挟み実施例１と同様の条件で封止樹脂を行ったところ、樹脂漏れが発生した。 Comparative Example 1
When a semiconductor chip was bonded to a single lead frame without a heat-resistant adhesive tape and sandwiched between molds and sealing resin was applied under the same conditions as in Example 1, resin leakage occurred.

比較例２
実施例１において、共重合体エマルションを含有する水分散型アクリル系粘着剤の調製にあたって、親水性層状珪酸塩を添加しなかったこと以外は実施例１と同じ組成の共重合体エマルションを含有する水分散型アクリル系粘着剤を調製した。また当該共重合体エマルションを含有する水分散型アクリル系粘着剤を用いて、実施例１と同様にして耐熱性粘着テープを作製し、また実施例１と同様にしてＱＦＮを製造した。このようにして得られたＱＦＮは、封止樹脂の工程前に樹脂漏れが発生していた。なお、実施例１と同様にして測定された、共重合体エマルションを含有する水分散型アクリル系粘着剤のせん断貯蔵弾性率は８．０×１０５Ｐａ、この粘着テープの１７５℃雰囲気下の粘着力は０．０５Ｎ／１９ｍｍ幅、この粘着テープの２００℃にて１時間加熱後に、２３℃での粘着力は３．０Ｎ／１９ｍｍ幅であった。 Comparative Example 2
Example 1 contains a copolymer emulsion having the same composition as Example 1 except that the hydrophilic layered silicate was not added in preparing the water-dispersed acrylic pressure-sensitive adhesive containing the copolymer emulsion. A water-dispersed acrylic pressure-sensitive adhesive was prepared. Further, a heat-resistant pressure-sensitive adhesive tape was produced in the same manner as in Example 1 using the water-dispersed acrylic pressure-sensitive adhesive containing the copolymer emulsion, and QFN was produced in the same manner as in Example 1. The QFN thus obtained had a resin leak before the sealing resin process. In addition, the shear storage elastic modulus of the water-dispersed acrylic pressure-sensitive adhesive containing the copolymer emulsion, measured in the same manner as in Example 1, was 8.0 × 10 5 Pa, and the pressure-sensitive adhesive tape had a 175 ° C. atmosphere. The adhesive strength was 0.05 N / 19 mm width. After the adhesive tape was heated at 200 ° C. for 1 hour, the adhesive strength at 23 ° C. was 3.0 N / 19 mm width.

本発明の半導体装置の製造方法の一例を示す工程図である。It is process drawing which shows an example of the manufacturing method of the semiconductor device of this invention. 本発明におけるリードフレームの一例を示す図であり、（ａ）は正面図、（ｂ）は要部拡大図、（ｃ）は樹脂封止後の状態を示す縦断面図である。It is a figure which shows an example of the lead frame in this invention, (a) is a front view, (b) is a principal part enlarged view, (c) is a longitudinal cross-sectional view which shows the state after resin sealing. 本発明における樹脂封止工程の一例を示す縦断面図である。It is a longitudinal cross-sectional view which shows an example of the resin sealing process in this invention.

符号の説明Explanation of symbols

１０ リードフレーム
１１ パッケージパターン領域
１１ａ 開口
１１ｂ 端子部
１１ｃ ダイパッド
１１ｄ ダイバー
１２ キャビティ
１３ ガイドピン用孔
１５ 半導体チップ
１５ａ 電極パッド
１６ ボンディングワイヤ
１７ 封止樹脂
１７ａ 切断部
１８ 金型
１８ａ 上金型
１８ｂ 下金型
１９ 導電性ペースト
２０ 耐熱性粘着テープ
２０ａ 基材層
２０ｂ 粘着層
２１ 封止された構造物
２１ａ 半導体装置
DESCRIPTION OF SYMBOLS 10 Lead frame 11 Package pattern area 11a Opening 11b Terminal part 11c Die pad 11d Diver 12 Cavity 13 Guide pin hole 15 Semiconductor chip 15a Electrode pad 16 Bonding wire 17 Sealing resin 17a Cutting part 18 Mold 18a Upper mold 18b Lower mold 19 conductive paste 20 heat resistant adhesive tape 20a base material layer
20b Adhesive layer 21 Sealed structure 21a Semiconductor device

Claims (5)

アウターパッド側に耐熱性粘着テープを貼り合わせた金属製のリードフレームのダイパッド上に半導体チップをボンディングする搭載工程と、封止樹脂により半導体チップ側を片面封止する封止工程と、封止された構造物を個別の半導体装置に切断する切断工程とを、少なくとも含む半導体装置の製造方法に用いる耐熱性粘着テープであって、前記耐熱性粘着テープが、基材層と、親水性層状珪酸塩と粘着剤を含む粘着層とを含むことを特徴とする半導体装置製造用の耐熱性粘着テープ。   A mounting step of bonding a semiconductor chip onto a die pad of a metal lead frame having a heat-resistant adhesive tape bonded to the outer pad side, a sealing step of sealing one side of the semiconductor chip side with a sealing resin, and sealing A heat-resistant pressure-sensitive adhesive tape used in a method for manufacturing a semiconductor device including at least a cutting step of cutting the structure into individual semiconductor devices, wherein the heat-resistant pressure-sensitive adhesive tape comprises a base material layer and a hydrophilic layered silicate And a pressure-sensitive adhesive layer containing a pressure-sensitive adhesive. A heat-resistant pressure-sensitive adhesive tape for manufacturing a semiconductor device. 前記粘着層が、粘着剤100重量部に対して40重量部以下の親水性層状珪酸塩を含む請求項１記載の耐熱性粘着テープ。   The heat-resistant adhesive tape according to claim 1, wherein the adhesive layer contains 40 parts by weight or less of hydrophilic layered silicate with respect to 100 parts by weight of the adhesive. 前記粘着層が乳化剤の存在下で乳化重合して得られた共重合体エマルションを含有する水分散型アクリル系粘着剤を含む請求項１または２記載の耐熱性粘着テープ。   The heat-resistant pressure-sensitive adhesive tape according to claim 1 or 2, wherein the pressure-sensitive adhesive layer contains a water-dispersed acrylic pressure-sensitive adhesive containing a copolymer emulsion obtained by emulsion polymerization in the presence of an emulsifier. 前記粘着層の面をステンレス板に貼付し、１７５℃雰囲気下での粘着力が０．２Ｎ／１９ｍｍ幅以上である請求項１〜３いずれか記載の耐熱性粘着テープ。   The heat-resistant adhesive tape according to any one of claims 1 to 3, wherein a surface of the adhesive layer is affixed to a stainless steel plate, and an adhesive strength in an atmosphere of 175 ° C is 0.2 N / 19 mm width or more. 前記粘着層の面をステンレス板に貼付し、２００℃にて１時間加熱した場合の２３℃での粘着力が５．０Ｎ／１９ｍｍ幅以下である請求項１〜４いずれか記載の耐熱性粘着テープ。
The heat-resistant adhesive according to any one of claims 1 to 4, wherein an adhesive force at 23 ° C when the surface of the adhesive layer is attached to a stainless steel plate and heated at 200 ° C for 1 hour is 5.0 N / 19 mm width or less. tape.
JP2006317581A 2006-11-24 2006-11-24 Heat-resistant adhesive tape for semiconductor device manufacturing Expired - Fee Related JP4343943B2 (en)

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TW096141486A TW200831633A (en) 2006-11-24 2007-11-02 Heat-resistant adhesive tape for manufacturing semiconductor device
EP07022117A EP1926137A3 (en) 2006-11-24 2007-11-14 Heat-resistant adhesive tape for manufacturing semiconductor device
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012099159A1 (en) * 2011-01-20 2012-07-26 日東電工株式会社 Heat-resistant adhesive tape for semiconductor package manufacturing step
TWI427750B (en) * 2010-07-20 2014-02-21 Siliconix Electronic Co Ltd Semiconductor packages including die and l-shaper lead and method of manufacturing
WO2018207408A1 (en) * 2017-05-10 2018-11-15 日立化成株式会社 Temporary protective film for semiconductor sealing molding
WO2023233970A1 (en) * 2022-06-03 2023-12-07 株式会社レゾナック Temporary protection film for production of semiconductor device and production method for semiconductor device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5320863B2 (en) * 2008-07-02 2013-10-23 オムロン株式会社 Electronic components
KR101194544B1 (en) * 2011-01-20 2012-10-25 도레이첨단소재 주식회사 Adhesive masking tape for die exposed flip-chip package defcp molded underfill muf
CN105575820A (en) * 2014-10-14 2016-05-11 菱生精密工业股份有限公司 Square-plane pin-free packaging structure and packaging method thereof
CN110277340B (en) 2018-03-14 2022-11-15 日东电工（上海松江）有限公司 Heat-resistant pressure-sensitive adhesive sheet for semiconductor device production
CN111954925A (en) * 2018-03-30 2020-11-17 三井化学东赛璐株式会社 Method for manufacturing electronic device
CN113072893A (en) * 2021-03-24 2021-07-06 东莞市美鑫工业胶带有限公司 High-temperature-resistant adhesive tape and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05179210A (en) * 1991-04-24 1993-07-20 Ciba Geigy Ag Thermally conductive adhesive film, laminate having thermally conductive adhesive layer, and article made by using them
JP2002167557A (en) * 2000-12-01 2002-06-11 Sekisui Chem Co Ltd Composition for pressure-sensitive adhesive, pressure- sensitive adhesive and pressure-sensitive adhesive sheet
JP2004186262A (en) * 2002-11-29 2004-07-02 Sekisui Chem Co Ltd Method for manufacturing semiconductor package
JP2004186323A (en) * 2002-12-02 2004-07-02 Nitto Denko Corp Method of manufacturing semiconductor device and heat-resistant adhesive tape used therefor
JP2006013062A (en) * 2004-06-24 2006-01-12 Nitto Denko Corp Method for manufacturing semiconductor device, heat-resistant adhesive tape for use therein and heat-resistant adhesive composition

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6908784B1 (en) * 2002-03-06 2005-06-21 Micron Technology, Inc. Method for fabricating encapsulated semiconductor components
JP3849978B2 (en) * 2002-06-10 2006-11-22 日東電工株式会社 Semiconductor device manufacturing method and heat-resistant adhesive tape used therefor
US6791168B1 (en) * 2002-07-10 2004-09-14 Micron Technology, Inc. Semiconductor package with circuit side polymer layer and wafer level fabrication method
JP2004095844A (en) * 2002-08-30 2004-03-25 Lintec Corp Wafer dicing/bonding sheet, and manufacturing method of semiconductor device
WO2004109786A1 (en) * 2003-06-06 2004-12-16 Hitachi Chemical Co., Ltd. Adhesive sheet, dicing tape integrated type adhesive sheet, and semiconductor device producing method
JP4770126B2 (en) * 2003-06-06 2011-09-14 日立化成工業株式会社 Adhesive sheet

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05179210A (en) * 1991-04-24 1993-07-20 Ciba Geigy Ag Thermally conductive adhesive film, laminate having thermally conductive adhesive layer, and article made by using them
JP2002167557A (en) * 2000-12-01 2002-06-11 Sekisui Chem Co Ltd Composition for pressure-sensitive adhesive, pressure- sensitive adhesive and pressure-sensitive adhesive sheet
JP2004186262A (en) * 2002-11-29 2004-07-02 Sekisui Chem Co Ltd Method for manufacturing semiconductor package
JP2004186323A (en) * 2002-12-02 2004-07-02 Nitto Denko Corp Method of manufacturing semiconductor device and heat-resistant adhesive tape used therefor
JP2006013062A (en) * 2004-06-24 2006-01-12 Nitto Denko Corp Method for manufacturing semiconductor device, heat-resistant adhesive tape for use therein and heat-resistant adhesive composition

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427750B (en) * 2010-07-20 2014-02-21 Siliconix Electronic Co Ltd Semiconductor packages including die and l-shaper lead and method of manufacturing
WO2012099159A1 (en) * 2011-01-20 2012-07-26 日東電工株式会社 Heat-resistant adhesive tape for semiconductor package manufacturing step
JP2012151360A (en) * 2011-01-20 2012-08-09 Nitto Denko Corp Heat-resistant adhesive tape for semiconductor package manufacturing process
WO2018207408A1 (en) * 2017-05-10 2018-11-15 日立化成株式会社 Temporary protective film for semiconductor sealing molding
JPWO2018207408A1 (en) * 2017-05-10 2020-03-19 日立化成株式会社 Temporary protective film for semiconductor encapsulation
US11195728B2 (en) 2017-05-10 2021-12-07 Showa Denko Materials Co., Ltd. Temporary protective film for semiconductor sealing molding
JP7143845B2 (en) 2017-05-10 2022-09-29 昭和電工マテリアルズ株式会社 Temporary protective film for semiconductor encapsulation molding
WO2023233970A1 (en) * 2022-06-03 2023-12-07 株式会社レゾナック Temporary protection film for production of semiconductor device and production method for semiconductor device

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