JP2008129303A - Liquid crystal display device and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To form a common electrode with high precision in a liquid crystal display panel with a system which has the common electrode for each pixel solidly formed on a principal surface of an insulating substrate, and has a comb-shaped pixel electrode arranged on the common electrode via an insulating film, without using sputter deposition and a photolithography step. <P>SOLUTION: A bank 50 for the common electrode is formed simultaneously with a gate wire/electrode 3 and a common electrode wire 10 to be formed on the principal surface of a glass substrate 1, and the common electrode 2 is formed with high precision by inkjet-applying conductive ink to the inside surrounded by the bank 50. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a liquid crystal display device and a method of manufacturing the same, and is particularly suitable for a horizontal electric field type liquid crystal display device in which the step of forming a common transparent conductive film in the horizontal electric field method is reduced to reduce the overall cost.

  A liquid crystal display device is widely used as a typical flat panel display (FPD). In a liquid crystal display device, a pixel electrode is basically formed on one of two substrates, a common electrode (opposite electrode, common electrode) is formed on the other substrate, and an electric field is formed between both electrodes to align liquid crystal molecules. The so-called vertical electric field method (generally called the TN method) for controlling the direction, a pixel electrode and a common electrode (counter electrode) are arranged substantially parallel to the substrate surface of one of the two substrates The so-called transverse electric field method (also referred to as IPS method), in which the orientation direction of liquid crystal molecules is controlled by an electric field formed between the electrodes. Many of these methods have been proposed and put into practical use.

  Among these types of liquid crystal display devices, the horizontal electric field method has a wide viewing angle, and both the pixel electrode and the common electrode are provided on one substrate (usually the substrate on which the thin film transistor is formed, the thin film transistor substrate: TFT The substrate has a feature that the manufacturing yield is good because the alignment tolerance with the other substrate (usually the color filter substrate: CF substrate) is large because the color filter is formed. Have.

  The horizontal electric field type liquid crystal display device has an effective display area in which a large number of pixel circuits made of thin film transistors are arranged in a matrix on the main surface of a TFT substrate, which is one of the substrates, and lighting / non-lighting of pixels outside the effective display area An external circuit including a driving circuit for controlling the circuit is installed or formed. On the other hand, color filters of three colors R (red), G (green), and B (blue) are usually formed on the main surface of the CF substrate. The liquid crystal is sealed in the combined gap. The present invention relates to a liquid crystal display device of a horizontal electric field type, and particularly to a common electrode provided on a TFT substrate and its formation. Although some color filters are provided on the TFT substrate side, the present invention is not directly related to the color filters and will not be described in detail.

  FIG. 10 is a cross-sectional view of one pixel for explaining an example of the structure of a conventional TFT substrate. As this TFT substrate, an inorganic substrate such as glass or an organic film such as heat-resistant plastics is used, and a thin film transistor, a pixel electrode, and a common electrode are formed on its main surface (inner surface for constituting a TFT or the like). Here, it demonstrates as what uses a transparent glass substrate for a board | substrate. In FIG. 13, the TFT partial TFT has a laminated structure of a metal film (aluminum (Al) or the like) film 3 on the main surface of the glass substrate 1. The pixel opening PX has an ITO film as the common electrode 2 in the same layer as the lower gate electrode / gate wiring 3A. In the common wiring portion (common electrode power feeding portion) CL, an upper common electrode 2A made of a metal film (aluminum (Al) or the like) is laminated on the ITO film forming the common electrode 2.

  A gate insulating film 4 is formed to cover the gate wiring / electrode comprising the metal film 3 and the ITO film 3A, the ITO film as the common electrode 2, and the upper common electrode 2A. The gate insulating film 4 is preferably silicon nitride (SiN), but may be another appropriate insulating material. A semiconductor film 5 is patterned on the TFT partial TFT above the gate insulating film 4. The semiconductor film 5 has a laminated structure having an amorphous silicon, polysilicon, etc. 5B, and an impurity semiconductor layer 5A as an upper layer.

  A source electrode 6 and a drain electrode 7 are formed on the semiconductor film 5 with a channel interposed therebetween. The source electrode 6 and the drain electrode 7 are formed by patterning a metal film suitable for aluminum. A protective insulating film 8 is formed so as to cover the gate insulating film 4 including the upper layers of the source electrode 6 and the drain electrode 7. The protective insulating film 8 is also called a passivation film (PAS film), and silicon nitride similar to the gate insulating film 4 is suitable. However, other suitable insulating materials may be used. Although the source electrode 6 and the drain electrode 7 are switched during operation, it is assumed that they are fixed as shown for convenience of explanation.

  A pixel electrode 9 made of ITO is patterned on the protective insulating film 8. The pixel electrode 9 has a comb shape, and a part thereof is connected to the drain electrode 7 of the TFT through a contact hole opened in the protective insulating film 8. In the common wiring portion CL, the common wiring 10 is connected to the upper common electrode 2A through a through hole opened through the protective insulating film 8 and the gate insulating film 4.

  In this TFT substrate, an alignment film is formed so as to cover the uppermost layer of the main surface, and an alignment control ability is imparted by a process such as rubbing. Thereafter, a CF substrate is bonded to the TFT substrate, and a liquid crystal is sealed between them to form a liquid crystal display panel. An external circuit such as a drive circuit chip is mounted on or around the TFT substrate constituting the liquid crystal display panel. A liquid crystal display device is formed by incorporating mechanical parts such as a backlight and a printed circuit board on which a display signal control circuit is mounted on the liquid crystal display panel.

  FIG. 11 is a diagram illustrating a process for forming the common electrode in FIG. FIG. 12 is a cross-sectional view of a TFT substrate corresponding to each process in FIG. 13 is a plan view of the TFT substrate after ITO etching in FIG. 12, and FIG. 14 is a plan view of the TFT substrate after metal (hereinafter also referred to as metal) etching in FIG.

  The formation process of the common electrode will be described with reference to FIGS. 11, 12, 13, and 14. First, in the process 31 of FIG. 11 (hereinafter referred to as P-31), the ITO film 20 is formed on the main surface of the glass substrate 1 (FIG. 12A). A photosensitive resist 21 is applied thereon, and is patterned into a common electrode pattern by a photolithography process (simply referred to as “photo” in the drawing) (P-32, (b) in FIG. 12). After etching the ITO film 20 using the resist 21 as a mask, the photosensitive resist 21 is removed (P-33, (c) in FIG. 12, FIG. 13), and the planar shape of the ITO pattern after etching is shown in FIG. 13 corresponds to (c) of Fig. 12. Aluminum (Al) 30 is sputtered as a metal thin film on this (P-34, (d) of Fig. 12), and the photosensitive film is exposed. After the resist is applied, the resist 41 is left on the gate wiring / electrode 3 and the upper common electrode wiring (common wiring) 2A by mask exposure (P-35, FIG. 12 (e)). The Exposing the common electrode 2 by removing the metal other than the underlying resist 41 (P-36, in FIG. 12 (f), FIG. 14).

As described above, conventionally, two photolithography processes of ITO patterning and gate electrode / wiring metal patterning are required. In addition to the sputter film formation and the photolithography process in the manufacture of the TFT substrate, the one in which any or all of the insulating film, the conductive film, and the semiconductor film constituting the TFT are formed by direct patterning by ink-jet coating is disclosed in Reference Document 1. It is disclosed.
Japanese Patent No. 3725169

  Cost reduction is important for a liquid crystal display panel constituting a liquid crystal display device for a large TV. Sputter deposition and patterning by the photolithography process require expensive and large manufacturing facilities such as sputtering vacuum equipment, exposure masks, exposure equipment, and development equipment, so reducing sputter deposition and photolithography processes reduces manufacturing costs. Contribute directly to

  In direct patterning of a thin film by inkjet coating disclosed in the cited document 1, it is possible to form a pattern with a precision of 10 μm. Since the size of one pixel of a liquid crystal display panel for TV is as large as about 500 μm × 170 μm, it is theoretically considered that a pixel electrode or the like can be directly formed by inkjet coating. However, the ink for inkjet is a solution in which a thin film material is dispersed, and the ink droplets dropped from the nozzle spread wet on the dropping surface, so that it is difficult to accurately control the outer edge of the coating end.

  Sputter deposition and photolithography for the manufacture of liquid crystal display panels with a common electrode formed on every principal pixel on the main surface of the glass substrate and a comb-like pixel electrode on the common electrode. If a common electrode having a larger area than the pixel electrode can be formed by inkjet coating in order to reduce the number of processes, it is possible to greatly contribute to cost reduction. However, in order not to generate a short circuit between wirings or a floating conductance between layers, the patterning accuracy of the common electrode is required to be 5 μm or less, and such high-accuracy patterning cannot be formed by inkjet coating described in the cited document 1.

  An object of the present invention is to provide a liquid crystal display panel having a common electrode formed for each pixel on the main surface of an insulating substrate such as glass, and a comb-like pixel electrode provided thereon via an insulating film. An object of the present invention is to obtain a liquid crystal display device and a manufacturing method thereof in which the common electrode is patterned with high accuracy without using sputter deposition and a photolithography process.

  The purpose is to form a common electrode bank (bank) at the same time as the gate wiring / electrode and common electrode wiring formed on the main surface of the glass substrate, apply conductive ink to the inner side surrounded by the bank, and bak This is achieved by forming the common electrode with high accuracy. Since the gate wiring / electrode and common electrode wiring and the bank are formed at the same time, the height from the surface of the insulating substrate is substantially the same. Further, since the common electrode is obtained by baking the applied ink, the height from the insulating substrate surface is lower than that of the gate wiring / electrode, the common electrode wiring and the bank.

  That is, a bank that regulates the outer shape of the common electrode simultaneously with the gate wiring / electrode is formed by an accurate photolithography process, and an ink in which a transparent conductive film material suitable for ITO is dispersed in a solution surrounded by the bank is used. Apply inkjet. The peripheral edge (outer edge) of the applied transparent conductive film material is regulated by the bank. By firing this, a high-precision common electrode is formed. Thereafter, an insulating film is formed, and a transparent conductive film material for pixel electrodes, preferably made of ITO, is formed by sputtering, and patterned into a comb-teeth shape in a photolithography process to form pixel electrodes.

  A typical configuration of the present invention will be described as follows. However, the present invention is not limited to this description and the description of embodiments described later, and does not depart from the technical idea of the present invention. Needless to say, various modifications are possible.

A liquid crystal display panel provided with an effective display area in which a large number of pixels made of thin film transistors are arranged in a matrix on the main surface of an insulating substrate, and an external circuit including a drive circuit for controlling lighting / non-lighting of pixels outside the effective display area In the liquid crystal display device having the present invention,
A gate wiring / electrode formed on the main surface of the insulating substrate, and a bank for regulating the outer edge of the common electrode together with the common electrode wiring and a part of the common electrode wiring in the same layer as the gate wiring / electrode;
A common electrode formed of a coating-type conductive film is provided inside the bank.

  In the liquid crystal display device of the present invention, the height of the bank from the insulating substrate surface is higher than the height of the common electrode.

  The liquid crystal display device of the present invention is characterized in that the gate wiring / electrode, the common electrode wiring, and the common electrode have substantially the same height from the surface of the insulating substrate.

  The liquid crystal display device of the present invention is characterized in that a pixel electrode is provided on an upper layer of the common electrode through an insulating film.

  The liquid crystal display device according to the present invention is characterized in that the pixel electrode has a comb shape.

  In the liquid crystal display device of the present invention, the pixel electrode is connected to the thin film transistor.

In the method of manufacturing the liquid crystal display device according to the present invention, a bank for a common electrode is formed simultaneously with a gate wiring / electrode and a common electrode wiring at an opening of the pixel of the insulating substrate constituting the liquid crystal display panel. And
A coating-type conductive solution is coated on the inner side surrounded by the bank, and is baked to form the common electrode.

  The method of manufacturing the liquid crystal display device of the present invention is characterized in that the bank is patterned by sputtering of a metal film and photolithography.

  Further, the method for producing the liquid crystal display device of the present invention is characterized in that the coating type conductive solution is applied by ink jetting.

  The present invention does not require sputter deposition or its own photolithography process to form the common electrode, thereby reducing the cost of manufacturing the TFT substrate, reducing investment in equipment and equipment, and reducing the overall cost. Can be realized.

  The best mode for carrying out the present invention will be described below in detail with reference to the accompanying drawings. The present invention is applied to a liquid crystal display panel having a structure in which a common electrode composed of a transparent conductive film is in the lowermost layer of the main surface of the TFT substrate. However, the present invention is not limited to this. The present invention can be similarly applied to formation of a thin film that requires accuracy.

  FIG. 1 is a process diagram for explaining a main process of the first embodiment of the present invention. FIG. 2 is a cross-sectional view of the TFT substrate corresponding to the main process of the process diagram shown in FIG. (A), (b), (c), (d), and (e) of FIG. 2 are the processes (P-1), (P-3), (P-4), and (P-5) of FIG. ), (P-6). FIG. 3 is a plan view of a state in which a gate wiring / electrode and a bank for forming a common electrode and a common electrode wiring that also constitutes a part of the bank are formed. FIG. It is a top view of the state in which the made common electrode was formed.

  In the process (P-1) of FIG. 1, aluminum Al is formed on the surface of the cleaned glass substrate 1 as a metal (metal) film 30 by sputtering. The metal film may be an alloy such as aluminum or neodymium, and various metals described later can also be used. A photosensitive resist is applied on the metal film 30 (P-2), and the resist 41 is left in the gate wiring / electrode and bank (including the common wiring portion) portion by a photolithography process including mask exposure and development (P -3). The metal film 30 is wet-etched using the resist 41 as an etching mask to leave the metal film 30 in the gate wiring / electrode 3 and the bank (including the common wiring 10) 50 as shown in FIG. ). Conductive ink 20 in which ITO (particulates) is dispersed in a solution as a coating-type transparent conductive film material is applied to the inside of the bank (including the common wiring 10 portion) 50 by inkjet (P-5). This is dried and baked to obtain a transparent common electrode 2 (P-6). The peripheral edge of the common electrode 2 is regulated by the bank 50. Since the bank 50 is patterned with high accuracy in the photolithography process, the common electrode whose outer edge is defined by the bank 50 is formed with the accuracy of 5 μm or less.

  Here, etching is a wet process, but dry etching using a gas may be used. Metals to be used are copper (Cu), titanium (Ti), chromium (Cr), molybdenum (Mo), nickel (Ni), tungsten (W) in addition to aluminum (Al) and aluminum / neodymium (Al / Nd). , Silver (Ag), gold (Au), or the like can be used alone or in an alloy, and a plurality of layers are formed as necessary. The film thickness is 30 nm to 500 nm, and the resistance value is 10 μΩcm or less.

  The bank pattern has a shape surrounding the pixel region. A common electrode wiring (common wiring) is formed together with the gate wiring / electrode and the bank, and this common wiring forms a part of the bank. A region surrounded by the bank on the glass substrate 1 corresponds to a transmissive portion of one pixel. A coating type transparent conductive film material is applied by ink jet so as to fill the inside of the bank. The transparent conductive film material may be applied to the inside of the bank by other application methods such as offset printing, not limited to inkjet.

  As a solution of the coating type transparent conductive film material, a precursor of a transparent conductive material such as ITO (herein, the precursor refers to a substance that becomes ITO by applying energy such as heating or light irradiation after coating) It may be dissolved in water, or may be obtained by dispersing fine particles having a size average particle diameter of 5 to 50 nm in a solvent. As a solvent for dispersing the fine particles, alcohols, ketones, glycol ethers, acyclic hydrocarbons, aromatic hydrocarbons, and the like can be used, and a dispersant and a stabilizer are added. As this type of solvent, for example, trade name “DX-400 series” manufactured by Sumitomo Metal Mining Co., Ltd. is commercially available.

  When a transparent conductive film material solution is simply applied onto a flat glass substrate by inkjet, the edge of the coating pattern (the position of the outer edge) is accurate due to the wettability with the substrate surface (the relationship between the substrate surface and the surface energy of the solution). Cannot be specified. However, according to this embodiment, the ink is blocked by the level difference of the metal forming the bank, so that it can be formed in a shape according to the bank pattern. The pattern accuracy of the bank can be formed with ± 2 μm, which is the accuracy of patterning by metal photolithography.

  And after apply | coating the solution of a transparent conductive material by dripping, temporary baking is performed at 200 degrees C or less, a solvent is removed to some extent, and baking is carried out at 200-450 degreeC. Thereby, a conductive thin film of ITO is formed. This ITO thin film has a sheet resistance of about 0.1 to 50 kΩ / □ at a film thickness of 100 nm. Further, the transmittance is 90% or more.

  Further, in the conventional film formation of a transparent conductive film such as ITO by sputtering, the material use efficiency of ITO or the like as a sputtering target is 50% at the maximum, and 20 to 40% is removed after film formation by patterning. In contrast, by using ink jet coating as in Example 1 of the present invention, 80 to 90% of the material can be used effectively, and cost can be reduced from the viewpoint of material efficiency.

  FIG. 5 is a cross-sectional view illustrating the process of forming the TFT substrate after forming the common electrode in the order of steps. Here, the common electrode formed in Example 1 is used. 6 is a plan view of one pixel portion corresponding to (a) of FIG. 5 similar to FIG. 4, FIG. 7 is a plan view of one pixel portion corresponding to (e) of FIG. 5, and FIG. FIG. 6 is a plan view of one pixel portion corresponding to 5 (h).

5 to 8, SiN is formed by CVD as the gate insulating film 4 on the TFT substrate (FIGS. 5A and 6) on which the common electrode 2 is formed (FIG. 5B). The reaction gas for forming the gate insulating film 4 is SiH ₄ or NH ₃ , and nitrogen gas N ₂ is used as a buffer gas. The gate insulating film 4 is formed to a thickness of 300 to 500 nm. Thereafter, amorphous silicon (a-Si) 5B and amorphous silicon (a-Si) 5A doped with n-type impurities are deposited by CVD as the semiconductor film 5 (FIG. 5B). Only the semiconductor layer 5 is patterned by a photolithography process and dry etching ((c) of FIG. 5).

  Next, a source / drain wiring metal 60 is formed by sputtering (FIG. 5D), and the source electrode 6 (and source wiring or data line) 12 and the drain electrode 7 are patterned (FIG. 5). (E), FIG. 7). In addition to aluminum (Al) and aluminum-neodymium alloy (Al—Nd), the metal for source / drain wiring is copper (Cu), titanium (Ti), chromium (Cr), molybdenum (Mo), nickel (Ni), Tungsten (W), silver (Ag), gold (Au), or the like is used alone or in an alloy, and formed as a plurality of layers as necessary.

  On this, SiN is formed as a protective insulating film (PAS film) 8 to a thickness of 300 to 500 nm by CVD ((f) in FIG. 5), and is passed through the protective insulating film 8 so as to connect the pixel electrode and the drain line. Holes are formed with photolithography (FIG. 5 (g)).

Further, a transparent conductive film as the pixel electrode 9 is formed to a thickness of 30 to 200 nm and patterned into a comb-teeth shape to generate a lateral electric field (FIG. 5 (h), FIG. 5 (i), FIG. 8). The transparent conductive film 9 is formed by sputtering, and materials such as ITO, SnO ₂ , ZnO, and Al-doped ZnO can be used. The cross section along line EF in FIG. 8 corresponds to (h) in FIG. 5, and the cross section along line GH corresponds to (i) in FIG.

  FIG. 9 is a cross-sectional view of one pixel for explaining a structural example of a TFT substrate constituting the liquid crystal display panel of the liquid crystal display device according to the present invention. As this TFT substrate 1, an inorganic substrate such as glass or an organic film such as heat-resistant plastics is used, and a thin film transistor TFT, a pixel electrode, and a common electrode are formed on the main surface. Here, it demonstrates as what uses a transparent glass substrate for the board | substrate 1. FIG. In FIG. 9, the TFT partial TFT has a gate electrode 3 of a metal film on the main surface of the glass substrate 1. The pixel opening PX has an ITO film as the common electrode 2 in the same layer as the gate electrode 3. A common electrode wiring 10 made of a metal film is formed in the common wiring portion (common electrode feeding portion) CL. The common electrode wiring 10 constitutes a part (one side) of the bank 50.

  A gate insulating film 4 is formed to cover the gate wiring / electrode 3, the ITO film as the common electrode 2, and the common electrode wiring 10. The gate insulating film 4 is preferably silicon nitride SiN, but may be another appropriate insulating material. A semiconductor film 5 is patterned on the TFT partial TFT above the gate insulating film 4. The semiconductor film 5 has a laminated structure having amorphous silicon (or polysilicon or the like) 5B and an impurity semiconductor layer 5A as an upper layer.

  A source electrode 6 and a drain electrode 7 are formed on the semiconductor film 5 with a channel interposed therebetween. The source electrode 6 and the drain electrode 7 are formed by patterning a metal film suitable for aluminum. A protective insulating film (PAS film) 8 is formed so as to cover the gate insulating film 4 including the upper layers of the source electrode 6 and the drain electrode 7. The protective insulating film 8 is preferably formed of silicon nitride similar to the gate insulating film 4. However, other suitable insulating materials may be used.

  A pixel electrode 9 made of ITO is patterned on the protective insulating film 8. The pixel electrode 9 has a comb shape, and a part thereof is connected to the drain electrode 7 of the TFT through a contact hole opened in the protective insulating film 8. In the common wiring portion CL, the common wiring 10 is connected to a common electrode power supply line (not shown) through a contact 11 of a through hole opened through the protective insulating film 8 and the gate insulating film 4.

  In this TFT substrate, an alignment film (not shown) is formed so as to cover the uppermost layer of the main surface, and an alignment control ability is imparted by a process such as rubbing. Thereafter, a CF substrate is bonded to the TFT substrate, and a liquid crystal is sealed between them to form a liquid crystal display panel. An external circuit such as a drive circuit chip is mounted on or around the TFT substrate constituting the liquid crystal display panel. A liquid crystal display device is formed by incorporating mechanical parts such as a backlight and a printed circuit board on which a display signal control circuit is mounted on the liquid crystal display panel.

It is process drawing explaining the principal part process of Example 1 of this invention. It is sectional drawing of the TFT substrate corresponding to the principal process of the process drawing shown in FIG. FIG. 3 is a plan view of a state where a gate wiring / electrode and a bank for forming a common electrode and a common electrode wiring that also constitutes a part of the bank are formed. It is a top view of the state in which the common electrode by which the shape control was carried out by the bank for common electrode formation was formed. It is sectional drawing explaining the formation process of the TFT substrate after formation of a common electrode to process order. It is a top view of the 1 pixel part corresponding to (a) of FIG. 8 similar to FIG. It is a top view of the 1 pixel part corresponding to (e) of FIG. FIG. 6 is a plan view of one pixel portion corresponding to (h) of FIG. 5. It is sectional drawing of 1 pixel explaining the structural example of the TFT substrate which comprises the liquid crystal display panel of the liquid crystal display device by this invention. It is sectional drawing of 1 pixel explaining the structural example of the conventional TFT substrate. It is a figure explaining the formation process of the common electrode in FIG. It is sectional drawing of the TFT substrate corresponding to each process in FIG. It is a top view of the TFT substrate after ITO etching in FIG. It is a top view of the TFT substrate after metal etching in FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 2 ... Common electrode, 3 ... Gate wiring / electrode, 4 ... Gate insulating film, 5 ... Silicon semiconductor film, 6 ... Source electrode, 7 ... Drain electrode, 8 ... Protective insulating film, 9 ... Pixel electrode, 10 ... Common electrode wiring, 11 ... Contact, 12 ... Data line, 20 ... ITO, 21, 41 ...・ Resist, 50 ... bank.

Claims (9)

A liquid crystal display panel provided with an effective display area in which a large number of pixels made of thin film transistors are arranged in a matrix on the main surface of an insulating substrate, and an external circuit including a drive circuit for controlling lighting / non-lighting of pixels outside the effective display area A liquid crystal display device comprising:
A gate wiring / electrode formed on the main surface of the insulating substrate, and a bank for regulating the outer edge of the common electrode together with the common electrode wiring and a part of the common electrode wiring in the same layer as the gate wiring / electrode;
A liquid crystal display device having a common electrode formed of a coating-type conductive film inside the bank. In claim 1,
The liquid crystal display device, wherein a height of the bank from the surface of the insulating substrate is higher than a height of the common electrode. In claim 1 or 2,
The liquid crystal display device, wherein the gate wiring / electrode, the common electrode wiring, and the common electrode have substantially the same height from the insulating substrate surface. In any one of Claims 1 thru | or 3,
A liquid crystal display device having a pixel electrode on an upper layer of the common electrode through an insulating film. In claim 4,
The liquid crystal display device, wherein the pixel electrode has a comb shape. In claim 4 or 5,
The liquid crystal display device, wherein the pixel electrode is connected to the thin film transistor. Consists of a thin film transistor substrate in which an effective display region in which a large number of pixels made of thin film transistors are arranged in a matrix on the main surface of the insulating substrate and an external circuit including a drive circuit for controlling lighting / non-lighting of the pixels outside the effective display region A method of manufacturing a liquid crystal display device having a liquid crystal display panel,
Forming a bank for the common electrode simultaneously with the gate wiring / electrode and the common electrode wiring at the opening of the pixel of the insulating substrate constituting the liquid crystal display panel,
A method of manufacturing a liquid crystal display device, comprising: applying a coating-type conductive solution to an inner side surrounded by the bank, and baking the coating-type conductive solution to form the common electrode. In claim 7,
A method of manufacturing a liquid crystal display device, wherein the bank is patterned by sputtering of a metal film and photolithography. In claim 7 or 8,
A method of manufacturing a liquid crystal display device, wherein the application type conductive solution is applied by inkjet.

Images