JP2008124448A5 - - Google Patents
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- JP2008124448A5 JP2008124448A5 JP2007268777A JP2007268777A JP2008124448A5 JP 2008124448 A5 JP2008124448 A5 JP 2008124448A5 JP 2007268777 A JP2007268777 A JP 2007268777A JP 2007268777 A JP2007268777 A JP 2007268777A JP 2008124448 A5 JP2008124448 A5 JP 2008124448A5
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- layer
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- manufacturing
- semiconductor device
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Claims (6)
前記剥離層上に、第１の電極層と、前記第１の電極層上の有機化合物を含む層と、前記有機化合物を含む層上のヤング率７．５×１０１０Ｎ／ｍ２以下の第２の電極層とを有する素子層を形成し、
前記素子層を第２の基板へ固定した後、前記素子層を前記第１の基板から剥離することを特徴とする半導体装置の作製方法。 Forming a release layer on the first substrate;
On the release layer, a first electrode layer, a layer containing an organic compound on the first electrode layer, and a Young's modulus of 7.5 × 10 10 N / m 2 or less on the layer containing the organic compound forming a device layer and a second electrode layer,
A method for manufacturing a semiconductor device, comprising: fixing an element layer to a second substrate; and then peeling the element layer from the first substrate.
前記第２の電極層の膜厚を１０ｎｍ以上２００ｎｍ以下とすることを特徴とする半導体装置の作製方法。 In claim 1 ,
The method for manufacturing a semiconductor device which is characterized in that the thickness of the pre-Symbol second electrode layer and 10nm or 200nm or less.
前記素子層を前記第１の基板から剥離した後、前記素子層に可撓性を有する第３の基板を固定することを特徴とする半導体装置の作製方法。 In claim 1 or claim 2 ,
After separating the element layer from the first substrate, the method for manufacturing a semiconductor device, characterized in that to fix the third substrate having flexibility to the element layer.
前記第２の基板として、可撓性を有する基板を用いることを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 3 ,
Wherein as the second substrate, the method for manufacturing a semiconductor device which is characterized by using a flexible substrate.
前記第２の電極層を、インジウム（Ｉｎ）、バリウム（Ｂａ）、鉛（Ｐｂ）、カルシウム（Ｃａ）、ビスマス（Ｂｉ）、マグネシウム（Ｍｇ）、錫（Ｓｎ）、又はアルミニウム（Ａｌ）のうち少なくとも１つを含む材料を用いて形成することを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 4 ,
The second electrode layer is made of indium (In), barium (Ba), lead (Pb), calcium (Ca), bismuth (Bi), magnesium (Mg), tin (Sn), or aluminum (Al). A method for manufacturing a semiconductor device, characterized by forming using a material including at least one.
前記素子層には、記憶素子、発光素子、圧電素子、又は有機トランジスタが形成されていることを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 5 ,
In the element layer, the memory element, the light-emitting element, a method for manufacturing a semiconductor device, characterized in that the piezoelectric element, or an organic transistor capacitor is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007268777A JP5354884B2 (en) | 2006-10-19 | 2007-10-16 | Method for manufacturing semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006285378 | 2006-10-19 | ||
| JP2006285378 | 2006-10-19 | ||
| JP2007268777A JP5354884B2 (en) | 2006-10-19 | 2007-10-16 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008124448A JP2008124448A (en) | 2008-05-29 |
| JP2008124448A5 true JP2008124448A5 (en) | 2010-09-30 |
| JP5354884B2 JP5354884B2 (en) | 2013-11-27 |
Family
ID=39508823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007268777A Expired - Fee Related JP5354884B2 (en) | 2006-10-19 | 2007-10-16 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5354884B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5042163B2 (en) * | 2008-08-20 | 2012-10-03 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
| EP2178133B1 (en) * | 2008-10-16 | 2019-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device |
| TWI607670B (en) | 2009-01-08 | 2017-12-01 | 半導體能源研究所股份有限公司 | Light emitting device and electronic device |
| JP5523510B2 (en) * | 2012-07-10 | 2014-06-18 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
| JP5802302B2 (en) * | 2014-04-08 | 2015-10-28 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
| KR20210075141A (en) * | 2018-10-10 | 2021-06-22 | 요하노이움 리서치 포르슝스게젤샤프트 엠베하 | piezoelectric sensor |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3253740B2 (en) * | 1993-04-05 | 2002-02-04 | パイオニア株式会社 | Organic electroluminescence device |
| JP3674973B2 (en) * | 1995-02-08 | 2005-07-27 | 住友化学株式会社 | Organic electroluminescence device |
| JPH0935871A (en) * | 1995-07-24 | 1997-02-07 | Sumitomo Chem Co Ltd | Organic electroluminescence element |
| JP4345278B2 (en) * | 2001-09-14 | 2009-10-14 | セイコーエプソン株式会社 | PATTERNING METHOD, FILM FORMING METHOD, PATTERNING APPARATUS, ORGANIC ELECTROLUMINESCENCE ELEMENT MANUFACTURING METHOD, COLOR FILTER MANUFACTURING METHOD, ELECTRO-OPTICAL DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD |
| JP2004349543A (en) * | 2003-05-23 | 2004-12-09 | Seiko Epson Corp | Method of peeling laminate, method of manufacturing thin film device, thin film device, and electronic equipment |
| JP2005085705A (en) * | 2003-09-10 | 2005-03-31 | Seiko Epson Corp | Electric device, its manufacturing method, electronic apparatus |
| JP2005136324A (en) * | 2003-10-31 | 2005-05-26 | Osaka Kyoiku Univ | Nonvolatile memory and erasing method |
| US7199394B2 (en) * | 2004-08-17 | 2007-04-03 | Spansion Llc | Polymer memory device with variable period of retention time |
| JP2006165535A (en) * | 2004-11-11 | 2006-06-22 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| KR100990291B1 (en) * | 2004-12-28 | 2010-10-26 | 삼성전자주식회사 | Memory devices employing dendrimers |
-
2007
- 2007-10-16 JP JP2007268777A patent/JP5354884B2/en not_active Expired - Fee Related
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