JP2008119785A - Grinding machine and grinding method of wafer - Google Patents

Grinding machine and grinding method of wafer Download PDF

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JP2008119785A
JP2008119785A JP2006305805A JP2006305805A JP2008119785A JP 2008119785 A JP2008119785 A JP 2008119785A JP 2006305805 A JP2006305805 A JP 2006305805A JP 2006305805 A JP2006305805 A JP 2006305805A JP 2008119785 A JP2008119785 A JP 2008119785A
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wafer
support portion
grinding
grinding wheel
support
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JP5048997B2 (en
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Kazuma Sekiya
一馬 関家
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Disco Corp
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Disco Abrasive Systems Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To efficiently remove undulation from a surface of a wafer by using the wafer having the undulation as it is. <P>SOLUTION: It is possible to remove the undulation by grinding a second surface Wb arranged on the side of a second supporting part 22 without applying unnecessary force to correct the undulation on the wafer W by making a grinding wheel 31b work on and grind the second surface Wb of the wafer W from a grinding wheel inserting groove 26 formed on the second supporting part 22 while actually supporting the wafer W with water 51 in a wafer supporting case body 20. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、ウエーハの研削装置および研削方法に関するものである。   The present invention relates to a wafer grinding apparatus and a grinding method.

IC,LSI等のデバイスが形成されるウエーハは、例えばシリコンインゴットをスライスしたウエーハの表裏面を研磨して形成される。   A wafer on which devices such as IC and LSI are formed is formed by polishing the front and back surfaces of a wafer obtained by slicing a silicon ingot, for example.

シリコンインゴット等を内周刃、ワイヤーソーでスライスしてウエーハを形成すると、ウエーハの切断面である表裏面にウネリが生じることから、一方の面にワックス等の流動性部材を敷設してガラス等の支持基台に固定し、露出している他方の面を研削砥石によって研削し、その後、研削された他方の面を支持基台に固定し露出した一方の面を研削砥石によって研削することで、スライスされたウエーハの表裏面からウネリを除去するようにしている(例えば、特許文献1参照)。   When a wafer is formed by slicing a silicon ingot or the like with an inner peripheral blade or a wire saw, undulation is generated on the front and back surfaces of the cut surface of the wafer. The other exposed surface is ground with a grinding wheel, and then the other ground surface is fixed to the support base and the exposed one surface is ground with a grinding wheel. Unery is removed from the front and back surfaces of the sliced wafer (see, for example, Patent Document 1).

特開2000−5982号公報JP 2000-5982 A

しかしながら、特許文献1に示される方式によると、研削前にウエーハに対する流動性部材の塗布工程、プレートに対する押圧工程、冷却による流動性部材の固化工程等の前処理といった余分な工程を必要とし、また、流動性部材が塗布された面側の研削に際しても固化された流動性部材の除去工程等を必要とし、スライスされたウエーハをそのまま用いることができず、作業効率が悪いという問題がある。   However, according to the method disclosed in Patent Document 1, an extra process such as a pretreatment such as a coating process of the fluid member on the wafer, a pressing process on the plate, a solidifying process of the fluid member by cooling, etc. is required before grinding. In addition, there is a problem in that the workability of the sliced wafer cannot be used as it is because the step of removing the solidified fluid member is required even when grinding the surface side coated with the fluid member.

本発明は、上記に鑑みてなされたものであって、ウネリのあるウエーハをそのまま用いてウエーハの面から効率よくウネリを取り除くことができるウエーハの研削装置および研削方法を提供することを目的とする。   The present invention has been made in view of the above, and an object of the present invention is to provide a wafer grinding apparatus and a grinding method capable of efficiently removing undulation from the surface of the wafer using the undulated wafer as it is. .

上述した課題を解決し、目的を達成するために、本発明に係るウエーハの研削装置は、ウエーハの面を研削するウエーハの研削装置であって、ウエーハの第1の面を水で支持する第1の支持部と、ウエーハの前記第1の面に対して背面となる第2の面を水で支持する第2の支持部と、前記第1の支持部と前記第2の支持部とで挟持されたウエーハの側部を囲繞して水で支持し前記第1の支持部と前記第2の支持部とで筐体を形成する環状支持部とで構成されたウエーハ支持筐体と、該ウエーハ支持筐体の前記第1の支持部および前記第2の支持部に水を供給する水供給手段と、環状の基台に研削砥石が環状に配設された研削ホイールを有し、該研削ホイールを回転可能に支持する研削手段と、該研削手段を前記ウエーハ支持筐体に支持されたウエーハに対して接近および離反する方向に移動する移動手段と、を備え、前記ウエーハ支持筐体の前記第2の支持部には前記研削ホイールの前記研削砥石を挿入させて前記ウエーハ支持筐体に支持されたウエーハの中心から外周に向けてウエーハの前記第2の面を研削させる研削砥石挿入溝が形成されていることを特徴とする。   In order to solve the above-described problems and achieve the object, a wafer grinding apparatus according to the present invention is a wafer grinding apparatus for grinding a wafer surface, wherein the first surface of the wafer is supported by water. A first support portion, a second support portion that supports a second surface that is the back surface of the first surface of the wafer with water, the first support portion, and the second support portion. A wafer support housing comprising an annular support portion surrounding the sandwiched wafer and supporting with water and forming a housing with the first support portion and the second support portion; A water supply means for supplying water to the first support portion and the second support portion of the wafer support housing; and a grinding wheel in which a grinding wheel is annularly arranged on an annular base, and the grinding Grinding means for rotatably supporting the wheel, and the grinding means supported by the wafer support housing Moving means that moves in a direction approaching and moving away from the wafer, and the grinding wheel of the grinding wheel is inserted into the second support portion of the wafer support housing to the wafer support housing. A grinding wheel insertion groove for grinding the second surface of the wafer from the center of the supported wafer toward the outer periphery is formed.

また、本発明に係るウエーハの研削装置は、上記発明において、ウエーハの前記第1の面および前記第2の面に対する吐出方向が斜めに設定された前記水供給手段から前記第1の支持部および前記第2の支持部に供給される水によって水流が形成されウエーハが回転することを特徴とする。   Further, the wafer grinding apparatus according to the present invention is the above-described invention, wherein in the above invention, the first support portion and the first support portion, wherein the discharge direction with respect to the first surface and the second surface of the wafer is set obliquely, A water flow is formed by water supplied to the second support portion, and the wafer rotates.

また、本発明に係るウエーハの研削方法は、ウエーハの第1の面を水で支持する第1の支持部と、ウエーハの前記第1の面に対して背面となる第2の面を水で支持する第2の支持部と、前記第1の支持部と前記第2の支持部とで挟持されたウエーハの側部を囲繞して水で支持し前記第1の支持部と前記第2の支持部とで筐体を形成する環状支持部とで構成されたウエーハ支持筐体と、該ウエーハ支持筐体の前記第1の支持部および前記第2の支持部に水を供給する水供給手段と、環状の基台に研削砥石が環状に配設された研削ホイールを有し、該研削ホイールを回転可能に支持する研削手段と、該研削手段を前記ウエーハ支持筐体に支持されたウエーハに対して接近および離反する方向に移動する移動手段と、を備え、前記ウエーハ支持筐体の前記第2の支持部には前記研削ホイールの前記研削砥石を挿入させる研削砥石挿入溝が形成された研削装置を用いて、ウエーハの面を研削するウエーハの研削方法であって、前記第2の支持部に形成された前記研削砥石挿入溝に前記研削ホイールの前記研削砥石を挿入して回転させて前記ウエーハ支持筐体に支持されたウエーハの中心から外周に向けてウエーハの前記第2の面を研削することを特徴とする。   In addition, the wafer grinding method according to the present invention includes a first support portion that supports the first surface of the wafer with water, and a second surface that is a back surface with respect to the first surface of the wafer with water. A second supporting portion to be supported; and a side portion of the wafer sandwiched between the first supporting portion and the second supporting portion, and is supported by water to support the first supporting portion and the second supporting portion. A wafer support housing comprising an annular support portion forming a housing with the support portion; and a water supply means for supplying water to the first support portion and the second support portion of the wafer support housing. A grinding wheel in which a grinding wheel is annularly arranged on an annular base, a grinding means for rotatably supporting the grinding wheel, and the grinding means on a wafer supported by the wafer support housing Moving means for moving toward and away from the wafer, and the wafer supporting housing A wafer grinding method for grinding a surface of a wafer using a grinding device in which a grinding wheel insertion groove for inserting the grinding wheel of the grinding wheel is formed in the second support portion. Inserting the grinding wheel of the grinding wheel into the grinding wheel insertion groove formed in the support and rotating the second surface of the wafer from the center of the wafer supported by the wafer support housing toward the outer periphery It is characterized by grinding.

本発明に係るウエーハの研削装置および研削方法によれば、ウエーハ支持筐体内においてウエーハを実質的に水で支持しながら第2の支持部に形成された研削砥石挿入溝から研削砥石をウエーハの第2の面に作用させて研削を行うようにしたので、ウエーハにウネリを矯正するような不要な力が作用することなく第2の支持部側に配置させた第2の面を研削してウネリを除去することができ、ウネリのあるウエーハをそのまま用いてウエーハの面から効率よくウネリを取り除くことができるという効果を奏する。特に、ウエーハ支持筐体内においてウエーハを水で支持しながら供給される水によって形成される水流でウエーハを回転させながら研削砥石で研削することで、ウエーハの第2の面のウネリをより一層効率よく除去することができるという効果を奏する。   According to the wafer grinding apparatus and the grinding method of the present invention, the grinding wheel is removed from the grinding wheel insertion groove formed in the second support portion while substantially supporting the wafer with water in the wafer supporting housing. Since grinding is performed by acting on the second surface, the second surface disposed on the second support portion side is ground without unnecessary force acting on the wafer to correct the undulation. As a result, it is possible to remove undulation efficiently from the surface of the wafer by using the wafer with undulation as it is. In particular, by grinding with a grinding wheel while rotating the wafer with a water flow formed by the water supplied while supporting the wafer with water in the wafer support housing, the undulation of the second surface of the wafer is more efficiently performed. There is an effect that it can be removed.

以下、本発明を実施するための最良の形態であるウエーハの研削装置および研削方法について図面を参照して説明する。   A wafer grinding apparatus and grinding method that are the best mode for carrying out the present invention will be described below with reference to the drawings.

図1は、本実施の形態の研削装置の構成例を示す概略斜視図である。本実施の形態の研削装置10は、ウエーハWを支持するウエーハ支持筐体20と、ウエーハ支持筐体20に支持されたウエーハWを研削する研削ホイール31を回転可能に支持した研削手段30と、研削手段30をウエーハ支持筐体20に支持されたウエーハWに対して接近および離反する上下方向に移動する移動手段40とを備える。   FIG. 1 is a schematic perspective view showing a configuration example of a grinding apparatus according to the present embodiment. The grinding apparatus 10 of the present embodiment includes a wafer support housing 20 that supports the wafer W, and a grinding means 30 that rotatably supports a grinding wheel 31 that grinds the wafer W supported by the wafer support housing 20. The grinding means 30 is provided with a moving means 40 that moves in a vertical direction that approaches and separates from the wafer W supported by the wafer support housing 20.

まず、研削手段30は、研削ホイール31と、ハウジング32と、ハウジング32の下端にボルト33によって装着されて反時計方向に回転自在な研削ホイール31を支持するマウント34と、マウント34を支持し回転するスピンドル35と、スピンドル35を回転駆動するモータ36と、ハウジング32を装着した移動基台37と、を備える。移動基台37は、被案内レール37aを有し、この被案内レール37aをハウジング11の支持板12に設けられた案内レール13に移動可能に嵌合することにより研削手段30が上下方向に移動可能に支持される。また、研削ホイール31は、図4に示すように、下向きカップ形状に形成された環状の基台31aと、この基台31aの下面に等間隔で環状に配設されてウエーハWの面に対して切削作用を示す複数個の研削砥石31bとを備える。   First, the grinding means 30 includes a grinding wheel 31, a housing 32, a mount 34 that is attached to the lower end of the housing 32 by a bolt 33 and supports the grinding wheel 31 that is rotatable counterclockwise, and supports and rotates the mount 34. A spindle 35 that rotates, a motor 36 that rotationally drives the spindle 35, and a moving base 37 on which the housing 32 is mounted. The moving base 37 has a guided rail 37a, and the grinding means 30 moves in the vertical direction by fitting the guided rail 37a to the guide rail 13 provided on the support plate 12 of the housing 11 so as to be movable. Supported as possible. Further, as shown in FIG. 4, the grinding wheel 31 has an annular base 31a formed in a downward cup shape, and is disposed annularly at equal intervals on the lower surface of the base 31a. And a plurality of grinding wheels 31b exhibiting cutting action.

また、移動手段40は、研削手段30の移動基台37を案内レール13に沿って移動させることで研削ホイール31をウエーハ支持筐体20に支持されたウエーハWに対して接近および離反する上下方向(Z軸方向)に研削送りするよう移動するためのものである。移動手段40は、支持板12に案内レール13と平行に上下方向に配設され回転可能に支持された雄ねじロッド41と、雄ねじロッド41を回転駆動するためのパルスモータ42と、移動基台37に装着され雄ねじロッド41と螺合する雌ねじブロック(図示せず)と、を備える。   Further, the moving means 40 moves the moving base 37 of the grinding means 30 along the guide rails 13 so that the grinding wheel 31 approaches and separates from the wafer W supported by the wafer support housing 20. This is for moving so as to feed in the grinding direction (Z-axis direction). The moving means 40 includes a male screw rod 41 that is disposed on the support plate 12 in parallel with the guide rail 13 in the vertical direction and is rotatably supported, a pulse motor 42 for rotationally driving the male screw rod 41, and a moving base 37. And an internal thread block (not shown) that is engaged with the external thread rod 41.

一方、ウエーハ支持筐体20は、図2〜図5に示すように、第1の支持部21と第2の支持部22と環状支持部23とで構成されてウエーハWを内部で支持する筐体である。図2は、ウエーハ支持筐体を示す分解斜視図であり、図3は、ウエーハ支持筐体を示す斜視図であり、図4は、研削箇所付近を示す概略断面図であり、図5は、ウエーハ支持筐体と研削ホイールとの配置関係等を平面図的に示す模式図である。   On the other hand, as shown in FIGS. 2 to 5, the wafer support housing 20 includes a first support portion 21, a second support portion 22, and an annular support portion 23, and supports the wafer W inside. Is the body. 2 is an exploded perspective view showing the wafer support housing, FIG. 3 is a perspective view showing the wafer support housing, FIG. 4 is a schematic cross-sectional view showing the vicinity of a grinding portion, and FIG. It is a schematic diagram which shows the positional relationship etc. of a wafer support housing | casing and a grinding wheel in a top view.

第1の支持部21は、ウエーハWよりも一回り大きく形成されてウエーハWの下面側となる第1の面Waを水で支持するもので、研削手段30の直下位置と図1に示す待機位置との間でX軸方向に移動自在な移動基台14上に固定配置されている。第2の支持部22は、第1の支持部21と対をなして、ウエーハWの第1の面Waに対して背面(上面)となり研削砥石31bによる研削作用を受ける第2の面Wbを水で支持するものである。環状支持部23は、第1の支持部21と第2の支持部22とで挟持されたウエーハWの側部Wcを囲繞して水で支持するように第1の支持部21の外周部に壁状に形成されたものである。すなわち、第1の支持部21と環状支持部23とがウエーハWを収容し得る凹部を有する環状体として形成され、この環状体と環状体上面を着脱自在に覆う第2の支持部22とによりウエーハWを凹部内に水で支持し得る筐体を構成する。ここで、環状支持部23上には、ウエーハWの支持時に第1の支持部21に対して第2の支持部22を水圧に抗して密着状態に維持するために図示しない吸引源に連結される吸引溝24が形成されている。また、環状支持部23上には、第1の支持部21に対して第2の支持部22の位置決めを行う位置決めピン25が形成され、第2の支持部22側には位置決めピン25が嵌合する図示しない位置決め穴が形成されている。   The first support portion 21 is formed to be slightly larger than the wafer W and supports the first surface Wa which is the lower surface side of the wafer W with water. The first support portion 21 is positioned immediately below the grinding means 30 and the standby shown in FIG. It is fixedly disposed on a movable base 14 that is movable in the X-axis direction between the positions. The second support portion 22 is paired with the first support portion 21 and has a second surface Wb that is a back surface (upper surface) with respect to the first surface Wa of the wafer W and receives a grinding action by the grinding wheel 31b. It is supported by water. The annular support portion 23 is formed on the outer peripheral portion of the first support portion 21 so as to surround and support the side portion Wc of the wafer W sandwiched between the first support portion 21 and the second support portion 22 with water. It is formed in a wall shape. That is, the first support portion 21 and the annular support portion 23 are formed as an annular body having a recess capable of accommodating the wafer W, and the annular support body and the second support portion 22 detachably covering the upper surface of the annular body. A housing capable of supporting the wafer W with water in the recess is configured. Here, on the annular support portion 23, it is connected to a suction source (not shown) in order to keep the second support portion 22 in close contact with the first support portion 21 against water pressure when the wafer W is supported. A suction groove 24 is formed. Further, a positioning pin 25 for positioning the second support portion 22 with respect to the first support portion 21 is formed on the annular support portion 23, and the positioning pin 25 is fitted on the second support portion 22 side. A matching positioning hole (not shown) is formed.

また、本実施の形態の研削装置10は、このようなウエーハ支持筐体20の第1の支持部21および第2の支持部22に水51を供給する水供給手段50を備える。水供給手段50は、第1の支持部21に表裏面方向に貫通するように形成された複数個の水供給ノズル52と、第2の支持部22に表裏面方向に貫通するように形成された複数個の水供給ノズル53と、これら水供給ノズル52,53と水供給源とを連結するように形成された配管経路等からなる。   Further, the grinding apparatus 10 according to the present embodiment includes water supply means 50 for supplying water 51 to the first support portion 21 and the second support portion 22 of the wafer support housing 20. The water supply means 50 is formed so as to penetrate the first support portion 21 in the front and back direction and a plurality of water supply nozzles 52 formed so as to penetrate in the front and back direction. And a plurality of water supply nozzles 53 and piping paths formed so as to connect the water supply nozzles 52 and 53 and the water supply source.

ここで、複数個の水供給ノズル52のうちの一つは、第1の支持部21の中央に垂直に形成されているが、残りの複数個は、第1の支持部21において同一円周上に等間隔で離間させて配設され、かつ、ウエーハWの第1の面Waに対する水51の吐出方向が、図4および図2中に矢印で示すように、反時計回りの円周方向に沿って斜め上向きとなるように設定されている。また、複数個の水供給ノズル53は、第2の支持部22において同一円周上に等間隔で離間させて配設され、かつ、ウエーハWの第2の面Wbに対する水51の吐出方向が、図4および図2中に示すように、反時計回りの円周方向に沿って斜め下向きとなるように設定されている。このような吐出方向の設定により第1の支持部21および第2の支持部22に供給される水51によって反時計方向の水流が形成され、ウエーハ支持筐体20内に水51で支持されるウエーハWは、この水流によって反時計方向に回転することとなる。   Here, one of the plurality of water supply nozzles 52 is formed perpendicularly to the center of the first support portion 21, but the remaining plurality are arranged in the same circumference in the first support portion 21. The discharge direction of the water 51 with respect to the first surface Wa of the wafer W is arranged at equal intervals on the top, and the counterclockwise circumferential direction as shown by arrows in FIGS. 4 and 2 Is set to be diagonally upward. In addition, the plurality of water supply nozzles 53 are arranged at equal intervals on the same circumference in the second support portion 22, and the discharge direction of the water 51 with respect to the second surface Wb of the wafer W is As shown in FIGS. 4 and 2, it is set to be obliquely downward along the counterclockwise circumferential direction. By setting the discharge direction as described above, a water flow in the counterclockwise direction is formed by the water 51 supplied to the first support portion 21 and the second support portion 22 and is supported by the water 51 in the wafer support housing 20. The wafer W is rotated counterclockwise by this water flow.

さらに、前述のウエーハ支持筐体20を構成する第2の支持部22には、ウエーハ支持筐体20内に水51で支持されたウエーハWの第2の面Wbの一部を露出させる研削砥石挿入溝26が形成されている。この研削砥石挿入溝26は、研削ホイール31の一部の研削砥石31bがウエーハ支持筐体20中のウエーハWの第2の面Wbにオーバーラップするように研削砥石31bを回転自在に挿入させるためのものであり、研削ホイール31の半径に対応させた大きさの円弧状に形成されている。また、研削砥石挿入溝26は、挿入された研削ホイール31の一部の研削砥石31bがウエーハWの第2の面Wbの中心O(図5参照)を通って回転し得る位置に形成されている。ここで、第1の支持部21および第2の支持部22には、研削砥石挿入溝26のX軸方向の位置が所定位置となるように位置決めして両者を着脱自在に嵌合させる嵌合段部27,28が形成されている。なお、嵌合段部28は、第1の支持部21と第2の支持部22とを嵌合させた状態で、吸引溝24の端部を閉塞するように設定されている。   Further, a grinding wheel that exposes a part of the second surface Wb of the wafer W supported by the water 51 in the wafer support housing 20 is provided in the second support portion 22 constituting the wafer support housing 20 described above. An insertion groove 26 is formed. The grinding wheel insertion groove 26 is configured to rotatably insert the grinding wheel 31 b so that a part of the grinding wheel 31 b of the grinding wheel 31 overlaps the second surface Wb of the wafer W in the wafer support housing 20. And is formed in an arc shape having a size corresponding to the radius of the grinding wheel 31. The grinding wheel insertion groove 26 is formed at a position where a part of the grinding wheel 31b of the inserted grinding wheel 31 can rotate through the center O (see FIG. 5) of the second surface Wb of the wafer W. Yes. Here, the first support portion 21 and the second support portion 22 are fitted so that the position of the grinding wheel insertion groove 26 in the X-axis direction is a predetermined position and the both are detachably fitted. Step portions 27 and 28 are formed. The fitting step 28 is set so as to close the end of the suction groove 24 in a state where the first support 21 and the second support 22 are fitted.

また、各水供給ノズル52,53から供給される水51の供給量は個別に制御可能に構成され、研削砥石挿入溝26との位置関係に応じて水流の強弱が設定されている。図5を参照して説明する。図5中、実線太矢印は第2の支持部22の水供給ノズル53側の供給量を示し、破線太矢印は第1の支持部21の水供給ノズル52側の供給量を示し、矢印の長さが水流の強弱を示している。研削ホイール31の回転方向上流側部分となる研削砥石挿入溝26よりも反時計方向上流側(図5中、右側)においては水供給ノズル52からの水流が弱く水供給ノズル53からの水流が強くなるように設定されているとともに、研削ホイール31の回転方向下流側部分となる研削砥石挿入溝26よりも反時計方向上流側(図5中、左側)においては水供給ノズル52からの水流が強く水供給ノズル53からの水流が弱くなるように設定され、それ以外の部分の水供給ノズル52,53からの水流の強さは中間程度に設定されている。このような水流の強弱関係の設定により、ウエーハ支持筐体20内に水51で支持されるウエーハWは、水平状態ではなく、円弧状の研削砥石挿入溝26部分において研削ホイール31の回転方向上流側部分が低く研削ホイール31の回転方向下流側部分が高くなるように斜め状態で支持されながら反時計方向に回転する。   Further, the supply amount of the water 51 supplied from each of the water supply nozzles 52 and 53 is configured to be individually controllable, and the strength of the water flow is set according to the positional relationship with the grinding wheel insertion groove 26. This will be described with reference to FIG. In FIG. 5, the solid thick arrow indicates the supply amount on the water supply nozzle 53 side of the second support portion 22, the broken thick arrow indicates the supply amount on the water supply nozzle 52 side of the first support portion 21, The length indicates the strength of the water flow. The water flow from the water supply nozzle 52 is weak and the water flow from the water supply nozzle 53 is strong on the upstream side in the counterclockwise direction (right side in FIG. 5) of the grinding wheel insertion groove 26 which is the upstream side portion of the grinding wheel 31 in the rotation direction. The water flow from the water supply nozzle 52 is stronger on the upstream side (left side in FIG. 5) counterclockwise than the grinding wheel insertion groove 26 that is the downstream side portion of the grinding wheel 31 in the rotational direction. The water flow from the water supply nozzle 53 is set to be weak, and the strength of the water flow from the other water supply nozzles 52 and 53 is set to an intermediate level. Due to the setting of the strength relationship of the water flow, the wafer W supported by the water 51 in the wafer support housing 20 is not in a horizontal state, but is upstream of the rotational direction of the grinding wheel 31 in the arc-shaped grinding wheel insertion groove 26 portion. The side portion rotates in the counterclockwise direction while being supported in an oblique state so that the lower side portion is lower and the downstream side portion in the rotation direction of the grinding wheel 31 is higher.

次に、本実施の形態の研削装置10によるウエーハWの研削方法について説明する。例えば、シリコンインゴット等から切り出されて研削対象となるウエーハWを、待機位置に位置付けられた第1の支持部21上に載置し、嵌合段部27,28同士を嵌合させる。この際、位置決めピン25と図示しない位置決め穴とを嵌合させて位置決めする。そして、図示しない吸引源を作動させて吸引溝24を介して第2の支持体22を第1の支持体21に密着状態で一体化させる。この状態で、各水供給ノズル52,53から第1の支持部21および第2の支持部22に水51を供給することで、ウエーハWをウエーハ支持筐体20内で水51中に浮く状態で支持させる。この状態では、ウエーハWの第1の面Wa、第2の面Wbおよび側部Wcの周囲には水51が介在されており、ウエーハWが第1の支持部21や第2の支持部22や環状支持部23に直接接触することはない。また、水供給部52,53からウエーハWに対して斜め方向に供給される水51の水流によって、ウエーハWはウエーハ支持筐体20内で水51に浮きながら反時計方向に回転することとなる。この際、場所毎の水流の強弱関係の設定により、ウエーハWは、研削砥石挿入溝26部分において研削ホイール31の回転方向上流側部分が低く研削ホイール31の回転方向下流側部分が高くなるように斜め状態で支持される。   Next, a method for grinding the wafer W by the grinding apparatus 10 of the present embodiment will be described. For example, a wafer W to be ground by being cut out from a silicon ingot or the like is placed on the first support portion 21 positioned at the standby position, and the fitting step portions 27 and 28 are fitted to each other. At this time, positioning is performed by fitting positioning pins 25 and positioning holes (not shown). Then, a suction source (not shown) is operated to integrate the second support body 22 with the first support body 21 in close contact via the suction groove 24. In this state, by supplying water 51 from the water supply nozzles 52 and 53 to the first support portion 21 and the second support portion 22, the wafer W floats in the water 51 in the wafer support housing 20. Support with. In this state, water 51 is interposed around the first surface Wa, the second surface Wb, and the side portion Wc of the wafer W, and the wafer W has the first support portion 21 and the second support portion 22. In addition, it does not directly contact the annular support portion 23. Further, the wafer W rotates counterclockwise while floating on the water 51 in the wafer support housing 20 due to the water flow of the water 51 supplied in an oblique direction to the wafer W from the water supply units 52 and 53. . At this time, the wafer W is set such that the upstream portion in the rotational direction of the grinding wheel 31 is low and the downstream portion in the rotational direction of the grinding wheel 31 is high in the grinding wheel insertion groove 26 portion by setting the strength relationship of the water flow for each place. Supported in an oblique state.

そして、移動基台14をX軸方向に移動させることで、ウエーハWを支持したウエーハ支持筐体20を研削手段30の下部側に移動させ、研削砥石挿入溝26が研削ホイール31の真下となるようにウエーハ支持筐体20を位置付ける。そこで、モータ36によって研削ホイール31を反時計方向に回転しながら移動手段40によって研削手段30をウエーハWに接近する方向に下降させ、回転する研削ホイール31の一部の研削砥石31bを研削砥石挿入溝26内に挿入させて研削砥石挿入溝26部分によって露出しているウエーハWの第2の面Wbに接触させ、研削砥石31bで第2の面Wbを研削する。   Then, by moving the movable base 14 in the X-axis direction, the wafer support housing 20 that supports the wafer W is moved to the lower side of the grinding means 30, and the grinding wheel insertion groove 26 is directly below the grinding wheel 31. The wafer support housing 20 is positioned as follows. Therefore, while the grinding wheel 31 is rotated counterclockwise by the motor 36, the grinding means 30 is lowered by the moving means 40 in a direction approaching the wafer W, and a part of the grinding wheel 31b of the rotating grinding wheel 31 is inserted into the grinding wheel. The second surface Wb of the wafer W is brought into contact with the second surface Wb of the wafer W that is inserted into the groove 26 and exposed by the grinding wheel insertion groove 26 portion, and the second surface Wb is ground with the grinding wheel 31b.

この際、ウエーハWおよび研削ホイール31(研削砥石31b)は、図5中に矢印で示すように反時計方向に回転するが、水流の強弱関係の設定により、ウエーハWが研削砥石挿入溝26部分において研削ホイール31の回転方向上流側部分が低く研削ホイール31の回転方向下流側部分が高くなるように斜め状態で支持されているので、図5中に斜線を施して示す部分のみが研削砥石31bがウエーハWの第2の面Wbに接触する実際の研削領域Aとなり、ウエーハWの中心Oから研削ホイール31の回転方向下流側となる外周に向かって略半径分ずつ第2の面Wbが研削される。ウエーハWの中心Oを通るこのような研削動作を続けることにより、ウエーハWの第2の面Wbが全面に亘って平坦に研削され、ウネリが除去される。   At this time, the wafer W and the grinding wheel 31 (grinding wheel 31b) rotate counterclockwise as indicated by an arrow in FIG. 5, but the wafer W is set to the grinding wheel insertion groove 26 portion by setting the strength of water flow. In FIG. 5, the grinding wheel 31 is supported in an oblique state so that the upstream portion in the rotational direction is low and the downstream portion in the rotational direction of the grinding wheel 31 is high. Therefore, only the portion indicated by hatching in FIG. Becomes the actual grinding region A that contacts the second surface Wb of the wafer W, and the second surface Wb is ground by a substantially radial amount from the center O of the wafer W toward the outer periphery on the downstream side in the rotation direction of the grinding wheel 31. Is done. By continuing such a grinding operation passing through the center O of the wafer W, the second surface Wb of the wafer W is ground flat over the entire surface, and undulation is removed.

ウエーハWの第2の面Wbの研削が終了した後は、研削手段30を移動手段40によってウエーハWから離反する方向に上昇させた後、ウエーハ支持筐体20を待機位置に戻し、吸引源による吸引状態を解除して第2の支持部22を第1の支持部21から取り外してウエーハWの表裏面を入れ替えて再度第1の支持部22内にウエーハWをセットし、第2の支持部22を嵌合させた後、上述の場合と同様に、第1の支持部21および第2の支持部22に水供給手段50によって水51を供給しながら、研削砥石挿入溝26に研削砥石31bを挿入させてウエーハWの未研削の新たな第2の面Wbの研削動作を実行させることにより、ウエーハWの両面の研削が完了する。   After the grinding of the second surface Wb of the wafer W is completed, the grinding means 30 is raised in the direction away from the wafer W by the moving means 40, and then the wafer support housing 20 is returned to the standby position, and the suction source is used. The suction state is released, the second support portion 22 is removed from the first support portion 21, the front and back surfaces of the wafer W are replaced, and the wafer W is set in the first support portion 22 again. After fitting 22, as in the case described above, while supplying water 51 by the water supply means 50 to the first support portion 21 and the second support portion 22, the grinding wheel 31 b is inserted into the grinding wheel insertion groove 26. Is inserted, and the grinding operation of the new second surface Wb that has not been ground on the wafer W is executed, whereby the grinding of the both surfaces of the wafer W is completed.

このような研削動作では、ウエーハ支持筐体20内においてウエーハWを実質的に水51で支持しながら第2の支持部22に形成された研削砥石挿入溝26から研削砥石31bをウエーハWの第2の面Wbに作用させて研削を行うので、ウエーハWにウネリを矯正するような不要な力が作用することなく第2の支持部22側に配置させた第2の面Wbを研削してウネリを除去することができ、ウネリのあるウエーハWをそのまま用いてウエーハWの面から効率よくウネリを取り除くことができる。特に、ウエーハ支持筐体20内においてウエーハWを水51で支持しながら供給される水51によって形成される水流でウエーハWを反時計方向に回転させながら研削砥石31bを反時計方向に回転させて研削することで、ウエーハWの第2の面Wbのウネリをより一層効率よく除去することができる。さらには、第1の支持部21および第2の支持部22に水供給手段50によって水51を供給しながら研削砥石31bで研削を行わせるので、研削水を用いて研削動作を行わせる場合と同様に、研削砥石挿入溝26部分で研削砥石31bの冷却と研削屑の排出とを行わせることもできる。   In such a grinding operation, the grinding wheel 31b is inserted into the grinding wheel 31b from the grinding wheel insertion groove 26 formed in the second support portion 22 while the wafer W is substantially supported by the water 51 in the wafer support housing 20. Since the grinding is performed by acting on the second surface Wb, the second surface Wb disposed on the second support portion 22 side is ground without unnecessary force acting on the wafer W to correct the undulation. Unery can be removed, and it is possible to efficiently remove unery from the surface of the wafer W by using the wafer W with unery as it is. In particular, the grinding wheel 31b is rotated counterclockwise while rotating the wafer W counterclockwise by the water flow formed by the water 51 supplied while supporting the wafer W with the water 51 in the wafer support housing 20. By grinding, the undulation of the second surface Wb of the wafer W can be removed more efficiently. Furthermore, since the grinding wheel 31b is ground while supplying the water 51 to the first support part 21 and the second support part 22 by the water supply means 50, the grinding operation is performed using the grinding water. Similarly, the grinding wheel 31b can be cooled and the grinding waste can be discharged at the grinding wheel insertion groove 26 portion.

本発明は、上述した実施の形態に限らず、本発明の趣旨を逸脱しない範囲であれば、種々の変形が可能である。例えば、本実施の形態では、シリコンインゴットから切り出されたウエーハWの両面を研削する例で説明したが、本発明においては、ウエーハを実質的に水で支持しながら研削するので、例えば表面にIC,LSI等のデバイスが形成されているウエーハの裏面を第2の面として研削する場合にも適用することができ、この際、ウエーハの表面(第1の面)に保護テープを貼着する必要がなくテープレスで研削することができる。   The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in the present embodiment, the example in which both surfaces of the wafer W cut out from the silicon ingot are ground has been described. However, in the present invention, the wafer is ground while being substantially supported by water. It can also be applied to the case where the back surface of a wafer on which a device such as LSI is formed is ground as the second surface. At this time, it is necessary to attach a protective tape to the front surface (first surface) of the wafer. It can be ground without tape.

また、本実施の形態では、研削砥石31bを反時計方向に回転させて中心Oから外周に向けて外向き方向にウエーハWの第2の面Wbの研削領域Aを研削するようにしたが、研削砥石31bを時計方向に回転させて外周側から中心O側に向かう方向となるように中心Oから外周に向けて内向き方向にウエーハWの第2の面Wbの研削領域Aを研削するようにしてもよい。ウエーハWを回転させる水流の向きも逆とし、ウエーハWを時計方向に回転させるようにしてもよい。   In the present embodiment, the grinding wheel 31b is rotated counterclockwise to grind the grinding region A of the second surface Wb of the wafer W in the outward direction from the center O toward the outer periphery. The grinding wheel 31b is rotated clockwise to grind the grinding region A of the second surface Wb of the wafer W inward from the center O toward the outer periphery so as to be directed from the outer periphery toward the center O. It may be. The direction of the water flow that rotates the wafer W may be reversed, and the wafer W may be rotated clockwise.

本発明の実施の形態の研削装置の構成例を示す概略斜視図である。It is a schematic perspective view which shows the structural example of the grinding apparatus of embodiment of this invention. ウエーハ支持筐体を示す分解斜視図である。It is a disassembled perspective view which shows a wafer support housing | casing. ウエーハ支持筐体を示す斜視図である。It is a perspective view which shows a wafer support housing | casing. 研削箇所付近を示す概略断面図である。It is a schematic sectional drawing which shows the grinding location vicinity. ウエーハ支持筐体と研削ホイールとの配置関係等を平面図的に示す模式図である。It is a schematic diagram which shows the positional relationship etc. of a wafer support housing | casing and a grinding wheel in a top view.

符号の説明Explanation of symbols

20 ウエーハ支持筐体
21 第1の支持部
22 第2の支持部
23 環状支持部
30 研削手段
31 研削ホイール
31a 基台
31b 研削砥石
40 移動手段
50 水供給手段
51 水
W ウエーハ
Wa 第1の面
Wb 第2の面
Wc 側部
DESCRIPTION OF SYMBOLS 20 Wafer support housing | casing 21 1st support part 22 2nd support part 23 Annular support part 30 Grinding means 31 Grinding wheel 31a Base 31b Grinding wheel 40 Moving means 50 Water supply means 51 Water W Wafer Wa 1st surface Wb Second side Wc Side

Claims (3)

ウエーハの面を研削するウエーハの研削装置であって、
ウエーハの第1の面を水で支持する第1の支持部と、ウエーハの前記第1の面に対して背面となる第2の面を水で支持する第2の支持部と、前記第1の支持部と前記第2の支持部とで挟持されたウエーハの側部を囲繞して水で支持し前記第1の支持部と前記第2の支持部とで筐体を形成する環状支持部とで構成されたウエーハ支持筐体と、
該ウエーハ支持筐体の前記第1の支持部および前記第2の支持部に水を供給する水供給手段と、
環状の基台に研削砥石が環状に配設された研削ホイールを有し、該研削ホイールを回転可能に支持する研削手段と、
該研削手段を前記ウエーハ支持筐体に支持されたウエーハに対して接近および離反する方向に移動する移動手段と、
を備え、
前記ウエーハ支持筐体の前記第2の支持部には前記研削ホイールの前記研削砥石を挿入させて前記ウエーハ支持筐体に支持されたウエーハの中心から外周に向けてウエーハの前記第2の面を研削させる研削砥石挿入溝が形成されていることを特徴とするウエーハの研削装置。
A wafer grinding device for grinding a wafer surface,
A first support portion that supports the first surface of the wafer with water, a second support portion that supports the second surface that is the back surface of the wafer with respect to the first surface, and the first An annular support portion that surrounds a side portion of the wafer sandwiched between the support portion and the second support portion and supports the wafer with water, and forms a housing with the first support portion and the second support portion. A wafer support housing composed of
Water supply means for supplying water to the first support portion and the second support portion of the wafer support housing;
A grinding means having a grinding wheel in which a grinding wheel is annularly arranged on an annular base, and rotatably supporting the grinding wheel;
Moving means for moving the grinding means in a direction approaching and separating from the wafer supported by the wafer support housing;
With
The grinding wheel of the grinding wheel is inserted into the second support portion of the wafer support housing, and the second surface of the wafer is moved from the center of the wafer supported by the wafer support housing toward the outer periphery. A grinding apparatus for a wafer, wherein a grinding wheel insertion groove for grinding is formed.
ウエーハの前記第1の面および前記第2の面に対する吐出方向が斜めに設定された前記水供給手段から前記第1の支持部および前記第2の支持部に供給される水によって水流が形成されウエーハが回転することを特徴とする請求項1に記載のウエーハの研削装置。   A water flow is formed by the water supplied to the first support portion and the second support portion from the water supply means in which the discharge direction with respect to the first surface and the second surface of the wafer is set obliquely. 2. The wafer grinding apparatus according to claim 1, wherein the wafer rotates. ウエーハの第1の面を水で支持する第1の支持部と、ウエーハの前記第1の面に対して背面となる第2の面を水で支持する第2の支持部と、前記第1の支持部と前記第2の支持部とで挟持されたウエーハの側部を囲繞して水で支持し前記第1の支持部と前記第2の支持部とで筐体を形成する環状支持部とで構成されたウエーハ支持筐体と、該ウエーハ支持筐体の前記第1の支持部および前記第2の支持部に水を供給する水供給手段と、環状の基台に研削砥石が環状に配設された研削ホイールを有し、該研削ホイールを回転可能に支持する研削手段と、該研削手段を前記ウエーハ支持筐体に支持されたウエーハに対して接近および離反する方向に移動する移動手段と、を備え、前記ウエーハ支持筐体の前記第2の支持部には前記研削ホイールの前記研削砥石を挿入させる研削砥石挿入溝が形成された研削装置を用いて、ウエーハの面を研削するウエーハの研削方法であって、
前記第2の支持部に形成された前記研削砥石挿入溝に前記研削ホイールの前記研削砥石を挿入して回転させて前記ウエーハ支持筐体に支持されたウエーハの中心から外周に向けてウエーハの前記第2の面を研削することを特徴とするウエーハの研削方法。
A first support portion that supports the first surface of the wafer with water, a second support portion that supports the second surface that is the back surface of the wafer with respect to the first surface, and the first support portion; An annular support portion that surrounds a side portion of the wafer sandwiched between the support portion and the second support portion and supports the wafer with water, and forms a housing with the first support portion and the second support portion. A wafer support housing composed of: a water supply means for supplying water to the first support portion and the second support portion of the wafer support housing; and a grinding wheel in an annular base Grinding means having a disposed grinding wheel and rotatably supporting the grinding wheel, and moving means for moving the grinding means in a direction approaching and separating from the wafer supported by the wafer support housing And the second support portion of the wafer support housing includes a grinding wheel. Serial using a grinding device grinding wheel insertion groove is formed for inserting the grinding wheel, a grinding method of the wafer to grind the surface of the wafer,
The grinding wheel of the grinding wheel is inserted into the grinding wheel insertion groove formed in the second support portion and rotated to rotate from the center of the wafer supported by the wafer support housing toward the outer periphery. A method for grinding a wafer, comprising grinding the second surface.
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JPH10217079A (en) * 1997-02-07 1998-08-18 Koyo Mach Ind Co Ltd Sheet disk work both surface grinding device
JPH1177498A (en) * 1997-09-03 1999-03-23 Sumitomo Heavy Ind Ltd Rotational driving method of thin work
JPH11320360A (en) * 1998-05-19 1999-11-24 Super Silicon Kenkyusho:Kk Method and device for two-surface simultaneous machining of work

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JPH0732259A (en) * 1993-07-22 1995-02-03 Mitsubishi Materials Corp Work rotating device of double-head grinding machine
JPH09262747A (en) * 1996-03-27 1997-10-07 Nachi Fujikoshi Corp Double grinding device for high brittle material
JPH10217079A (en) * 1997-02-07 1998-08-18 Koyo Mach Ind Co Ltd Sheet disk work both surface grinding device
JPH1177498A (en) * 1997-09-03 1999-03-23 Sumitomo Heavy Ind Ltd Rotational driving method of thin work
JPH11320360A (en) * 1998-05-19 1999-11-24 Super Silicon Kenkyusho:Kk Method and device for two-surface simultaneous machining of work

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JP2015119197A (en) * 2008-03-06 2015-06-25 株式会社荏原製作所 Polishing device and polishing method

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