JP2008116795A - Display apparatus - Google Patents

Display apparatus Download PDF

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JP2008116795A
JP2008116795A JP2006301421A JP2006301421A JP2008116795A JP 2008116795 A JP2008116795 A JP 2008116795A JP 2006301421 A JP2006301421 A JP 2006301421A JP 2006301421 A JP2006301421 A JP 2006301421A JP 2008116795 A JP2008116795 A JP 2008116795A
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film
display device
driving
insulating substrate
connection terminal
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Hiroshi Ueda
上田  宏
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a display apparatus in which a drive IC is directly mounted on connection terminals on an insulating substrate, the display apparatus suppressing short circuit across the terminals, not complicating the mounting process and having high reliability of connection. <P>SOLUTION: The display apparatus is provided with the insulating substrate 1 formed with a display area and a driving IC4 directly mounted on a connection terminal part formed outside the display area in order to supply signals to the display area 1, and the display apparatus is characterized in that the connection terminal part includes two or more projection parts 10 formed of an insulating material, and the projection parts 10 are covered with a transparent conductive film 11. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、絶縁性基板上において、表示領域周辺部に駆動回路を直接実装する際の接続構造に関するものである。   The present invention relates to a connection structure when a drive circuit is directly mounted on the periphery of a display area on an insulating substrate.

液晶表示装置は2枚の絶縁性基板の間に液晶を挟んだものに駆動回路(駆動IC)を接続し、照明装置(バックライト)の上に重ねたものである。例えば薄膜トランジスタ(TFT)を用いた液晶表示装置では2枚の絶縁性基板のうち、一方の基板(TFT基板)上にマトリクス状にTFTが配列されており、もう一方の基板(対向基板)よりも外形が突出した形で重ね合わされている。各TFTには各々に1つずつ画素が形成されており、TFTをON、OFFすることにより画素に送られる画像信号を制御している。各TFTのソース電極から画像信号を入力するためのソース配線が絶縁性基板の短辺と平行に引き出され、TFT基板の長辺側の端部付近で駆動ICを接続するための接続端子が形成されている。また、各TFTのゲート電極からTFTをON、OFFするためのゲート配線がTFT基板長辺と平行に引き出され、TFT基板の短辺側の端部付近でソース側と同様に駆動ICを接続するための接続端子が形成されている。例えばCOG(Chip On Glass)実装方式で駆動ICを絶縁性基板上に直接実装する形態では、TFT基板における対向基板よりも突出した部分に配置された接続端子に異方性導電膜(ACF:Anisotropic Conductive Film)と呼ばれる、接着樹脂中に導電性の微細粒子を分散させたものを介して駆動ICが直接実装される。 In the liquid crystal display device, a driving circuit (driving IC) is connected to a liquid crystal sandwiched between two insulating substrates, and is stacked on a lighting device (backlight). For example, in a liquid crystal display device using a thin film transistor (TFT), TFTs are arranged in a matrix on one of two insulating substrates (TFT substrate), and more than the other substrate (opposing substrate). The outer shape is superimposed in a protruding form. One pixel is formed for each TFT, and an image signal sent to the pixel is controlled by turning the TFT on and off. Source wiring for inputting an image signal from the source electrode of each TFT is drawn out in parallel with the short side of the insulating substrate, and a connection terminal for connecting the driving IC is formed near the end on the long side of the TFT substrate. Has been. Also, gate wiring for turning on and off the TFT is drawn out from the gate electrode of each TFT in parallel with the long side of the TFT substrate, and the driving IC is connected near the end on the short side of the TFT substrate in the same manner as the source side. A connection terminal is formed. For example, in a form in which the driving IC is directly mounted on an insulating substrate by a COG (Chip On Glass) mounting method, an anisotropic conductive film (ACF: Anisotropic conductive film) is connected to a connection terminal arranged in a portion protruding from the counter substrate in the TFT substrate. The driving IC is directly mounted via a conductive fine particle) in which conductive fine particles are dispersed in an adhesive resin.

近年、画像の高精細化の要求から駆動ICの出力ピン数は急速に増加してきている。また、駆動ICの製造コストを削減するために、駆動IC外形がシュリンクされ、ピン数の増加に伴って駆動ICバンプのピッチは一層微細化が進行している。これまで微細ピッチのCOG実装に対してはいくつかの対策が施されてきたが、この様にピッチの微細化が進むにつれ、バンプの面積もより縮小されてきている。そのため、ACFの導電粒子がバンプ上に捕捉される数が減少し、バンプ上に導電粒子が捕捉されない不具合が発生している。その対策として、ACF中に混合する導電粒子数を増やし、バンプ上に捕捉される確率を向上させるなどの対策が施されている。しかしながら、混合する導電粒子数の増加と共に今度は導電粒子の凝集が増加し、導電粒子の連なり(連続性)により隣接端子間がショートする不具合が発生している。 In recent years, the number of output pins of drive ICs has been rapidly increasing due to the demand for higher definition of images. Further, in order to reduce the manufacturing cost of the driving IC, the outer shape of the driving IC is shrunk, and the pitch of the driving IC bump is further miniaturized as the number of pins increases. Until now, some measures have been taken for COG mounting with a fine pitch, but as the pitch becomes finer in this way, the area of the bumps has been further reduced. For this reason, the number of ACF conductive particles captured on the bumps is reduced, and there is a problem that the conductive particles are not captured on the bumps. As countermeasures, countermeasures such as increasing the number of conductive particles mixed in the ACF and improving the probability of being captured on the bump are taken. However, with the increase in the number of conductive particles to be mixed, the aggregation of the conductive particles is increased this time, and there is a problem that the adjacent terminals are short-circuited due to the connection (continuity) of the conductive particles.

このような導電粒子の捕捉確率の向上と、導電粒子凝集による隣接端子間のショートを同時に対策する方法として、ACFを2つの層で構成する方法が考案されている。これは、絶縁性基板上の接続端子側に面した層には導電粒子を配合し、駆動ICのバンプ側に面した層には導電粒子を配合せず接着樹脂のみの層が形成されるものである。ACF中の導電粒子は駆動ICを熱圧着する際に、駆動ICバンプ側に近い樹脂が圧着時に駆動IC外へ向かって排出され、導電粒子も樹脂と共に排出されるため、バンプ上の粒子捕捉にはわずかしか寄与しないことから、駆動ICバンプ側に近い樹脂中に導電粒子を配合せず、絶縁性基板上の接続端子に面した樹脂中にのみ導電粒子を配合している。このような構成により、樹脂中の導電粒子配合量の増加を抑えながらバンプへの導電粒子捕捉数を向上することができるため、導通不良と隣接端子間ショートに対する対策を両立させることができる。 As a method of simultaneously improving such a probability of capturing conductive particles and simultaneously preventing a short circuit between adjacent terminals due to conductive particle aggregation, a method of forming an ACF in two layers has been devised. This is because conductive particles are blended in the layer facing the connection terminal on the insulating substrate, and the layer facing the bump side of the driving IC is not blended with conductive particles and a layer made of only adhesive resin is formed. It is. When conductive particles in the ACF are thermocompression bonded to the drive IC, the resin close to the drive IC bump side is discharged toward the outside of the drive IC during pressure bonding, and the conductive particles are also discharged together with the resin. Therefore, the conductive particles are blended only in the resin facing the connection terminal on the insulating substrate, and not in the resin close to the drive IC bump side. With such a configuration, it is possible to improve the number of conductive particles trapped in the bumps while suppressing an increase in the amount of conductive particles in the resin, and thus it is possible to achieve both countermeasures against poor conduction and shorts between adjacent terminals.

また、その他の従来技術として、ガラス基板上に形成された突起部上に、光を反射する反射面を有するとともに導電性を持つ金属膜と保護膜とを形成し、フィルムキャリア上の電極と、ACFなどの導電性接着剤により圧着することで電気的に接続するものがある(例えば、特許文献1参照)。 In addition, as another conventional technique, on the projection formed on the glass substrate, a reflective film that reflects light and a conductive metal film and a protective film are formed, and an electrode on the film carrier; Some are electrically connected by pressure bonding with a conductive adhesive such as ACF (for example, see Patent Document 1).

特開2002−6330号公報(図1)Japanese Patent Laying-Open No. 2002-6330 (FIG. 1)

しかしながら上述のように2層のACFの構造を用いた場合、その下層には導電粒子が用いられているため、導電粒子の連なりによる端子間ショート発生を完全に抑制するには至らない。近年、TFTを用いた液晶表示装置に用いられる駆動ICでは高解像度化、コスト低減を目的とした多ピン化が進み、それに伴って微細ピッチ接合技術の要求は益々高まってきており、端子間のピッチが狭ければ狭いほど、端子間ショートが発生する可能性は増加するという問題があった。   However, when the two-layer ACF structure is used as described above, since conductive particles are used in the lower layer, it is not possible to completely suppress the occurrence of a short circuit between terminals due to a series of conductive particles. In recent years, drive ICs used in liquid crystal display devices using TFTs have increased in number of pins for the purpose of higher resolution and cost reduction, and accordingly, the demand for fine pitch bonding technology has been increasing. The narrower the pitch, the higher the possibility that a short circuit between terminals will occur.

また、上述の特許文献1の従来技術においては、絶縁性基板上の端子とフィルムキャリア上の電極とを接続するものであり、駆動ICを絶縁性基板上に直接実装する場合の接合技術については何等触れられておらず、駆動ICを絶縁性基板上にACFを用いて直接実装する際の接続信頼性に問題があった。なお、本従来技術においては、フィルムキャリア上の電極と接続される絶縁性基板上の端子側の接続面には、保護膜が形成されており、該保護膜部分の表面を機械的に軽く研摩して除去し、下の金属膜を露出させた後に実装していたことから、実装工程が煩雑になるという問題点も有していた。   Moreover, in the prior art of the above-mentioned Patent Document 1, the terminal on the insulating substrate and the electrode on the film carrier are connected, and the joining technique when the drive IC is directly mounted on the insulating substrate is described. No mention is made, and there is a problem in connection reliability when the drive IC is directly mounted on the insulating substrate using the ACF. In this prior art, a protective film is formed on the terminal-side connection surface on the insulating substrate connected to the electrode on the film carrier, and the surface of the protective film portion is mechanically lightly polished. In this case, since the mounting was performed after the metal film was removed and the underlying metal film was exposed, the mounting process was complicated.

本発明はこのような問題点に鑑みてなされたものであり、絶縁性基板上の接続端子に駆動ICを直接実装する表示装置において、異方性導電膜を用いないことにより端子間ショートを抑制し、実装工程が煩雑となることなく、高い接続信頼性を得ることを目的とする。 The present invention has been made in view of such a problem, and in a display device in which a driving IC is directly mounted on a connection terminal on an insulating substrate, a short circuit between terminals is suppressed by not using an anisotropic conductive film. The object is to obtain high connection reliability without complicating the mounting process.

本発明は、表示領域が形成された絶縁性基板と、前記表示領域に信号を供給するために、前記絶縁性基板上の前記表示領域外に形成された接続端子部において直接実装された駆動ICとを備えた表示装置において、前記接続端子部は、絶縁物からなる複数の突起部を少なくとも含んでおり、前記突起部は導電膜により覆われている。 The present invention provides an insulating substrate on which a display area is formed, and a driving IC directly mounted on a connection terminal portion formed outside the display area on the insulating substrate in order to supply a signal to the display area. The connection terminal portion includes at least a plurality of protrusions made of an insulating material, and the protrusions are covered with a conductive film.

本発明によれば、絶縁性基板上の接続端子に駆動ICを直接実装する際に、隣接する接続端子間でのショートを抑制し、接続信頼性の高い表示装置を得ることができる。   According to the present invention, when a drive IC is directly mounted on a connection terminal on an insulating substrate, a short circuit between adjacent connection terminals can be suppressed and a display device with high connection reliability can be obtained.

実施の形態1.
本発明の実施の形態1を図1〜図2により説明する。図1は本発明の実施の形態1における表示装置の外観図であり、図2は本発明の実施の形態1における表示装置の駆動ICの実装断面図(A−A断面図)である。
Embodiment 1 FIG.
A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is an external view of a display device according to Embodiment 1 of the present invention, and FIG. 2 is a mounting sectional view (AA sectional view) of a drive IC of the display device according to Embodiment 1 of the present invention.

駆動ICを絶縁性基板上に直接実装する所謂COG実装方式を用いた、例えば小型の液晶表示装置の外観図を図1に示している。図1において、絶縁性基板1と、例えばカラーフィルターなどを備えた対向基板2の間に液晶が狭持されている。対向基板2の表面及び絶縁性基板1の裏面(図示せず)には偏光板3が貼付されている。絶縁性基板1上には複数の画素からなる表示領域が形成され、当該画素に信号を供給するための配線が形成されており、絶縁性基板端部における対向基板よりも突出した部分に配置された接続端子部に熱硬化性樹脂などからなる樹脂材料5が配置されている。樹脂材料5の上には駆動IC4が直接実装されている。駆動IC4が実装された領域よりもさらに絶縁性基板の端部には、駆動IC4へ信号を入力するためのフレキシブル回路基板6が、異方性導電膜(ACF:Anisotropic Conductive Film)7を介して接続されている。 FIG. 1 shows an external view of, for example, a small liquid crystal display device using a so-called COG mounting method in which a driving IC is directly mounted on an insulating substrate. In FIG. 1, a liquid crystal is sandwiched between an insulating substrate 1 and a counter substrate 2 provided with, for example, a color filter. A polarizing plate 3 is attached to the front surface of the counter substrate 2 and the back surface (not shown) of the insulating substrate 1. A display region composed of a plurality of pixels is formed on the insulating substrate 1 and wiring for supplying signals to the pixels is formed, and is disposed at a portion protruding from the counter substrate at the end of the insulating substrate. A resin material 5 made of a thermosetting resin or the like is disposed on the connecting terminal portion. A driving IC 4 is directly mounted on the resin material 5. A flexible circuit board 6 for inputting a signal to the drive IC 4 is provided via an anisotropic conductive film (ACF) 7 at the end of the insulating substrate further than the area where the drive IC 4 is mounted. It is connected.

図2は図1における駆動ICが実装される絶縁性基板上の接続端子部の断面図(A−A断面図)であり、絶縁性基板1の上にSiOまたはSiNのいずれかまたはその混合物で構成された第1の絶縁膜8が形成されている。第1の絶縁膜8の上にCr、Al、Mo、Cuのいずれかまたはそれらの積層膜を主材料とする不透明金属膜9を形成し、エッチングによりパターニングされ、接続端子を構成している。この不透明金属膜9の上には、SiOまたはSiNのいずれかまたはその混合物で形成された第2の絶縁膜10が形成されている。この第2の絶縁膜10をエッチングで部分的に除去することにより、下層の不透明金属膜9の必要部分を露出させることが可能となる。 2 is a cross-sectional view (AA cross-sectional view) of the connection terminal portion on the insulating substrate on which the driving IC in FIG. 1 is mounted, and either SiO 2 or SiN or a mixture thereof on the insulating substrate 1. The 1st insulating film 8 comprised by these is formed. On the first insulating film 8, an opaque metal film 9 mainly made of any one of Cr, Al, Mo, and Cu or a laminated film thereof is formed and patterned by etching to constitute a connection terminal. A second insulating film 10 made of either SiO 2 or SiN or a mixture thereof is formed on the opaque metal film 9. By partially removing the second insulating film 10 by etching, it is possible to expose a necessary portion of the underlying opaque metal film 9.

駆動IC4のバンプ12と重ね合わされ、直接接続される接続端子部においては、第2の絶縁膜8を島状に残し、突起部を形成させる。これらの絶縁膜10からなる島状の突起部と、不透明導電膜9上の前記突起部以外の領域とを覆うように透明導電膜11を形成する。このような構成とすることにより、不透明金属膜9と第2の絶縁膜10からなる突起部の表面に形成された透明導電膜11とは導通が得られ、突起状の電極となる。これらの突起電極の上に熱硬化性の樹脂材料5を塗布し、Auを主材料として形成された駆動IC4のバンプ12を突起電極の上に圧力を加えながら加熱することにより、駆動IC4のバンプ12と突起電極とが電気的に接続される。よって、導電材料5には、導電粒子を含まないものを用いることができる。なお、駆動IC4のバンプ12のAuは、突起電極の絶縁膜(にSiOまたはSiN)に比べて軟らかいため、突起電極は駆動IC4のバンプ12に食い込むようにして接続される。このため、接続端子部がたとえば高温高湿の環境下にさらされ、熱硬化性の樹脂材料5が膨潤したとしても、接続端子部の突起電極が駆動IC4のバンプ12に食い込んでいるため、導通は容易に失われることなく高い接続信頼性を保持することが可能となる。突起電極の高さは駆動IC4のバンプ12に食い込ませるため、より高いほうが好ましく、少なくとも0.5μm以上であることが好ましい。突起電極の幅については、より小さいほうが駆動IC4のバンプ12に食い込みやすく、少なくとも10μm以下であることが好ましい。駆動IC4の1バンプあたりの突起電極の数は多いほど好ましく、少なくとも3個以上であることが好ましい。 In the connection terminal portion that is overlapped with and directly connected to the bump 12 of the driving IC 4, the second insulating film 8 is left in an island shape, and a protrusion is formed. A transparent conductive film 11 is formed so as to cover the island-shaped protrusions made of these insulating films 10 and the region other than the protrusions on the opaque conductive film 9. With such a configuration, electrical conduction is obtained between the opaque metal film 9 and the transparent conductive film 11 formed on the surface of the projecting portion made of the second insulating film 10 to form a projecting electrode. By applying a thermosetting resin material 5 on these protruding electrodes and heating the bumps 12 of the driving IC 4 made of Au as a main material while applying pressure on the protruding electrodes, the bumps of the driving IC 4 12 and the protruding electrode are electrically connected. Therefore, the conductive material 5 can be a material that does not contain conductive particles. Since the Au of the bump 12 of the driving IC 4 is softer than the insulating film of the protruding electrode (and SiO 2 or SiN), the protruding electrode is connected so as to bite into the bump 12 of the driving IC 4. For this reason, even if the connection terminal portion is exposed to, for example, a high-temperature and high-humidity environment and the thermosetting resin material 5 swells, the protruding electrodes of the connection terminal portion bite into the bumps 12 of the drive IC 4, so that It is possible to maintain high connection reliability without being easily lost. The height of the protruding electrode is preferably higher because it protrudes into the bump 12 of the driving IC 4, and is preferably at least 0.5 μm or more. As for the width of the protruding electrode, the smaller one is likely to bite into the bump 12 of the driving IC 4 and is preferably at least 10 μm or less. The larger the number of protruding electrodes per bump of the driving IC 4 is, the more preferable, and it is preferable that the number is at least three.

また、上記では島状の突起部と、不透明導電膜上の前記突起部以外の領域とを覆うように、画素電極と同時に形成される透明導電膜を形成する構成について示しているが、その他薄膜トランジスタを構成するゲート線またはソース線と同時に形成される不透明の導電膜を形成してもよい。   In the above description, the transparent conductive film formed simultaneously with the pixel electrode is formed so as to cover the island-shaped protrusion and the region other than the protrusion on the opaque conductive film. An opaque conductive film that is formed at the same time as the gate line or the source line that constitutes may be formed.

以上説明したように、本実施の形態の構成とすることで、駆動ICを絶縁性基板上に直接する実装する際に、容易に接続信頼性の高い液晶表示装置を得ることが可能となる。   As described above, with the configuration of this embodiment, a liquid crystal display device with high connection reliability can be easily obtained when the drive IC is mounted directly on an insulating substrate.

実施の形態2.
本発明の実施の形態2を図3〜図5により説明する。図3は本発明の実施の形態2における表示装置の駆動ICの実装断面図(A−A断面図)、図4および図5は本発明の実施の形態2における表示装置の駆動ICのその他の実装断面図(A−A断面図)である。図3〜図5において、図1〜図2と同じ構成部分については同一の符号を付し、上記実施の形態1との相違点について説明する。
Embodiment 2. FIG.
A second embodiment of the present invention will be described with reference to FIGS. FIG. 3 is a mounting cross-sectional view (AA cross-sectional view) of the drive IC of the display device according to the second embodiment of the present invention, and FIGS. 4 and 5 are other diagrams of the drive IC of the display device according to the second embodiment of the present invention. It is mounting sectional drawing (AA sectional drawing). 3 to 5, the same components as those in FIGS. 1 to 2 are denoted by the same reference numerals, and differences from the first embodiment will be described.

図3においては、実施の形態1と同様に、第2の絶縁膜10が島状に形成されて突起部を形成しており、更に第2の絶縁膜上に有機樹脂系の材料からなる有機膜13が形成され、突起電極を形成している。実施の形態1と同様に、不透明金属膜9の露出部と突起部とを覆うように透明導電膜11が形成されている。実施の形態1と同様に突起電極の上に熱硬化性の樹脂材料5を塗布し、駆動IC4のバンプ12を圧力を加えながら加熱することにより、駆動IC4のバンプ12と突起電極とが電気的に接続されている。本実施の形態では、突起電極がさらに有機膜13を含んで形成されているため、駆動IC4のバンプ12を接続端子部に押し当てた際に、有機膜13は押しつぶされた形状で弾性変形している。この状態で熱硬化性の樹脂材料5により駆動IC4のバンプ12および突起電極の周辺が固定されるため、駆動IC4のバンプ12の表面と突起電極表面とは有機膜13の反発力で互いに押し付けられた状態となり、良好な接触抵抗が得られる。このため実施の形態1と同様に、高温高湿の環境下にさらされて熱硬化性の樹脂材料5が膨潤したとしても、突起電極の有機膜13が弾性変形しているため、樹脂材料5の膨張に追従し、駆動IC4のバンプ12の表面と突起電極表面の接触が保たれ、導通を保つことができる。本実施の形態では、上記実施の形態1と同様に樹脂材料5には、導電粒子を含まないものを用いることができる。また、本実施の形態では有機膜13を用いているため、その積層厚さが一般的に2〜3μmと厚く積層することが可能であり、突起部の高さを確保するのが容易となり、より良好に駆動ICのバンプと接続端子とを接続することが可能となる。 In FIG. 3, as in the first embodiment, the second insulating film 10 is formed in an island shape to form a protrusion, and an organic resin material is formed on the second insulating film. A film 13 is formed to form a protruding electrode. As in the first embodiment, a transparent conductive film 11 is formed so as to cover the exposed portion and the protruding portion of the opaque metal film 9. As in the first embodiment, the thermosetting resin material 5 is applied on the protruding electrodes, and the bumps 12 of the driving IC 4 and the protruding electrodes are electrically connected by heating the bumps 12 of the driving IC 4 while applying pressure. It is connected to the. In the present embodiment, since the protruding electrode further includes the organic film 13, when the bump 12 of the driving IC 4 is pressed against the connection terminal portion, the organic film 13 is elastically deformed in a crushed shape. ing. In this state, the periphery of the bumps 12 and the protruding electrodes of the driving IC 4 are fixed by the thermosetting resin material 5, so that the surface of the bumps 12 and the protruding electrodes on the driving IC 4 are pressed against each other by the repulsive force of the organic film 13. A good contact resistance can be obtained. For this reason, as in the first embodiment, even if the thermosetting resin material 5 is swollen by being exposed to a high-temperature and high-humidity environment, the organic film 13 of the protruding electrode is elastically deformed. The surface of the bump 12 of the driving IC 4 and the surface of the bump electrode are kept in contact with each other, so that conduction can be maintained. In the present embodiment, the resin material 5 that does not include conductive particles can be used as in the first embodiment. In addition, since the organic film 13 is used in the present embodiment, it is possible to stack the layer thickness as thick as generally 2 to 3 μm, and it becomes easy to secure the height of the protruding portion, It becomes possible to connect the bumps of the driving IC and the connection terminals more favorably.

なお、図2、図3における第1の絶縁膜8が不透明金属膜9の後に形成される場合を示したものが図4、図5であり、第1の絶縁膜8と第2の絶縁膜10が二重に重ねられて突起を形成している(図5の場合、さらに有機膜を含んで突起を形成している)。この場合も効果としては上述と同様であり、絶縁膜が厚くなる分突起電極が駆動IC4のバンプ12へより食い込み易くなる構造である。 FIGS. 4 and 5 show the case where the first insulating film 8 in FIGS. 2 and 3 is formed after the opaque metal film 9. The first insulating film 8 and the second insulating film are shown in FIGS. 10 are doubly stacked to form a protrusion (in the case of FIG. 5, the protrusion is further formed including an organic film). In this case as well, the effect is the same as described above, and the structure is such that the protruding electrodes are more likely to bite into the bumps 12 of the driving IC 4 as the insulating film becomes thicker.

上記の実施の形態によれば異方性導電膜のように導電粒子を介在させることなく端子間を接続することが可能であるため、隣接端子間ショートを防止し、容易に高い信頼性の接続を得ることが可能である。また、実施の形態1と同様に、上記では不透明金属膜の露出部と突起部とを覆うように、画素電極と同時に形成される透明導電膜を形成する構成について示しているが、その他薄膜トランジスタを構成するゲート線またはソース線と同時に形成される不透明の導電膜を形成してもよい。   According to the above embodiment, since it is possible to connect terminals without interposing conductive particles like an anisotropic conductive film, a short circuit between adjacent terminals can be prevented and connection with high reliability can be easily performed. It is possible to obtain Further, as in the first embodiment, the above description shows a structure in which a transparent conductive film formed simultaneously with the pixel electrode is formed so as to cover the exposed portion and the protruding portion of the opaque metal film. An opaque conductive film that is formed at the same time as the gate line or the source line to be formed may be formed.

さらに上記実施の形態において、突起に形成している絶縁膜の弾性率を、接続に使用している樹脂材料の硬化後の弾性率に比べて小さいものを選択することで、圧着時において突起を扁平させた状態を保持し、突起の弾力で端子間の接触を保つことも可能である。 Further, in the above embodiment, by selecting a smaller elastic modulus of the insulating film formed on the protrusion than the elastic modulus after curing of the resin material used for connection, the protrusion can be formed at the time of pressure bonding. It is also possible to keep the flat state and maintain contact between the terminals by the elasticity of the protrusions.

上記実施の形態例としては液晶を用いた表示装置について説明を行ったが、それに限定されることなく、エレクトロルミネセンス(EL)素子等を用いたあらゆる表示装置に適用可能であるばかりでなく、半導体素子と回路基板、回路基板間など、端子間を異方性導電膜で接続するあらゆる装置に適用可能である。 Although the display device using liquid crystal has been described as the above embodiment, the present invention is not limited to this, and is not only applicable to any display device using an electroluminescence (EL) element, The present invention can be applied to any device in which terminals are connected with an anisotropic conductive film, such as between a semiconductor element and a circuit board or a circuit board.

本発明の実施の形態1における表示装置の外観図である。It is an external view of the display apparatus in Embodiment 1 of this invention. 本発明の実施の形態1における表示装置の駆動ICの実装断面図である。It is mounting mounting sectional drawing of the drive IC of the display apparatus in Embodiment 1 of this invention. 本発明の実施の形態2における表示装置の駆動ICの実装断面図である。It is mounting sectional drawing of the drive IC of the display apparatus in Embodiment 2 of this invention. 本発明の実施の形態2における表示装置の駆動ICのその他の実装断面図である。It is other mounting sectional views of the drive IC of the display device in Embodiment 2 of the present invention. 本発明の実施の形態2における表示装置の駆動ICのその他の実装断面図である。It is other mounting sectional views of the drive IC of the display device in Embodiment 2 of the present invention.

符号の説明Explanation of symbols

1 絶縁性基板、2 対向基板、3 偏光板、4 駆動IC、5 樹脂材料、6 フレキシブル回路基板、7 異方性導電膜、8 第1の絶縁膜、9 不透明金属膜、10 第2の絶縁膜、11 透明導電膜、12 バンプ、13 有機膜 DESCRIPTION OF SYMBOLS 1 Insulating substrate, 2 Opposite substrate, 3 Polarizing plate, 4 Driving IC, 5 Resin material, 6 Flexible circuit board, 7 Anisotropic conductive film, 8 1st insulating film, 9 Opaque metal film, 10 2nd insulation Film, 11 Transparent conductive film, 12 Bump, 13 Organic film

Claims (6)

表示領域が形成された絶縁性基板と、
前記表示領域に信号を供給するために、前記絶縁性基板上の前記表示領域外に形成された接続端子部において直接実装された駆動ICと、
を備えた表示装置であって、
前記接続端子部は、絶縁物からなる複数の突起部を有し、前記突起部は導電膜により覆われたことを特徴とする表示装置。
An insulating substrate having a display area formed thereon;
In order to supply a signal to the display area, a driving IC directly mounted on a connection terminal portion formed outside the display area on the insulating substrate;
A display device comprising:
The display device, wherein the connection terminal portion has a plurality of protrusions made of an insulating material, and the protrusions are covered with a conductive film.
前記突起部は、前記絶縁性基板との間に不透明の金属膜を備えたことを特徴とする請求項1記載の表示装置。 The display device according to claim 1, wherein the protrusion includes an opaque metal film between the protrusion and the insulating substrate. 前記突起部はSiOまたはSiNを含むことを特徴とする請求項1または2記載の表示装置。 The display device according to claim 1, wherein the protrusion includes SiO 2 or SiN. 前記突起部は有機樹脂膜を含むことを特徴とする請求項1乃至3のいずれかに記載の表示装置。 The display device according to claim 1, wherein the protrusion includes an organic resin film. 前記導電膜は、前記表示領域を形成する画素電極と同一層の透明導電膜であることを特徴とする請求項1乃至4のいずれかに記載の表示装置。 The display device according to claim 1, wherein the conductive film is a transparent conductive film in the same layer as a pixel electrode that forms the display region. 前記駆動ICと前記接続端子部とは、導電粒子を含まない樹脂材料により接続されていることを特徴とする請求項1乃至5のいずれかに記載の表示装置。 The display device according to claim 1, wherein the drive IC and the connection terminal portion are connected by a resin material that does not include conductive particles.
JP2006301421A 2006-11-07 2006-11-07 Display apparatus Pending JP2008116795A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011061989A1 (en) * 2009-11-20 2011-05-26 シャープ株式会社 Device substrate and method for manufacturing same
CN107492565A (en) * 2016-06-10 2017-12-19 三星显示有限公司 Display device
KR20220116114A (en) * 2016-06-10 2022-08-22 삼성디스플레이 주식회사 display device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011061989A1 (en) * 2009-11-20 2011-05-26 シャープ株式会社 Device substrate and method for manufacturing same
CN107492565A (en) * 2016-06-10 2017-12-19 三星显示有限公司 Display device
KR20220116114A (en) * 2016-06-10 2022-08-22 삼성디스플레이 주식회사 display device
KR102575480B1 (en) * 2016-06-10 2023-09-08 삼성디스플레이 주식회사 display device
CN107492565B (en) * 2016-06-10 2023-10-10 三星显示有限公司 display device

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