JP2008108930A - Inspection method of semiconductor device and probe card - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe card of a semiconductor wafer for conducting optimal probe inspection, regardless of a variation in temperature atmosphere at the time of probe inspection. <P>SOLUTION: The probe card 7 for conducting probe inspection of a chip on a sheet of semiconductor wafer 6 includes an adjusting means for keeping stylus pressure of a probe 8 on a pad 12 to a predetermined level according to expansion and contraction of the probe 8 caused by variation in temperature qualification. As the adjustment means, a camera 10 for measuring expansion and contraction level of the probe 8 is provided at the probe card main body 7a and the stylus pressure of the probe 8 is adjusted based on the measured result by the camera 10. In this way, in the case of probe inspection, where temperature qualification is changed, the probe 8 of the probe card 7 keeps stylus pressure constant on the pad 12 of the wafer 6 until all the probe inspection is finished. Then, poor contact of the probe and damage of another wiring caused by variation of stylus pressure can be eliminated. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a technique that is particularly effective when applied to a semiconductor inspection apparatus and further to a probe card. For example, the present invention relates to a semiconductor device inspection method and a probe card that are useful for probe inspection assuming the use temperature of a chip after commercialization. .

  When inspecting the characteristics of each chip on the semiconductor wafer on which the element is formed, assuming the usage state after commercialization, probe inspection is performed in a temperature atmosphere corresponding to this, and the good / defective product is selected. Wafer probe inspection is known (Patent Document 1). In this probe inspection, a command signal necessary for the test is sent from the tester connected to the inspection apparatus to the probe inspection apparatus. Upon receiving the command signal, the probe inspection apparatus supplies the inspection signal to the chip on the wafer via the probe card, and detects the output signal at this time. This output signal is input to the tester via the probe card, and the tester analyzes the characteristics of the chip based on this signal.

  By the way, the probe card is provided with a plurality of input / output pins (probes), and the probe inspection is performed in a state where the probes abut each pad on the chip. Thus, the number of probes formed on the probe card is limited by the accuracy of alignment and the number of chips that can be inspected at one time is limited. When this one inspection is completed, the wafer is moved stepwise, the probe is brought into contact with the next chip, and the next probe inspection is performed.

In this probe inspection, if the temperature condition at the time of inspection is changed, the wafer contracts, thereby causing a deviation between the probe and the pad position on the wafer. Therefore, the conventional probe inspection apparatus corrects the step movement amount according to the temperature change so that the probe hits a desired pad.
JP-A-6-349909

  However, the above-described technique has the following problems. In other words, when probe inspection is performed under changing temperature conditions such as high-temperature atmosphere, the probe card warps in the vertical direction, the probe is displaced in the vertical direction in the apparatus, or the probe itself is extended. Sometimes the needle pressure on the pad of the tip changes. Incidentally, if the needle pressure is increased, the needle trace generated on the pad becomes larger and is removed from the pad, which may damage other wiring patterns and the like. On the other hand, if the needle pressure becomes weak, the contact between the probe and the pad is insufficient (contact failure), and the probe inspection itself becomes impossible. In particular, probe inspection involves inspecting a large number of chips on a wafer, so even if the setting is made so that the needle pressure is optimal at the beginning of probe inspection, the probe will continue as the inspection proceeds. When the temperature of the card rises, the stylus pressure will not be the optimum value in the middle or final stage.

  In order to avoid such a problem, it is conceivable to perform wafer alignment after both the wafer and the probe card are sufficiently warmed. However, in this method, the time required to start the probe inspection is increased, and the throughput is significantly reduced. Further, when the probe inspection for one wafer is completed and the next wafer is accommodated in the apparatus, the temperature of the probe card is lowered, the alignment must be performed again, and the throughput is lowered.

  Accordingly, an object of the present invention has been made in view of such circumstances, and provides a semiconductor device inspection method and a probe card capable of performing an optimal probe inspection regardless of changes in the atmosphere after warming during the probe inspection. It is to be.

  In order to achieve the above object, a method for inspecting a semiconductor device according to claim 1 of the present invention is characterized in that a probe formed on a probe card is brought into contact with an electrode portion of a chip of a semiconductor wafer to thereby improve the characteristics of the chip. In the probe inspection to be inspected, when heating or cooling the semiconductor wafer, the probe pressure to the electrode part of the probe is adjusted to be kept at a predetermined value according to the degree of expansion and contraction of the probe due to the temperature condition change. It is characterized by that.

  The method for inspecting a semiconductor device according to claim 2 is the method for inspecting a semiconductor device according to claim 1, wherein the degree of expansion and contraction of the probe is measured with a camera, and the needle pressure of the probe is determined based on the measured value. adjust.

  The method for inspecting a semiconductor device according to claim 3 is the method for inspecting a semiconductor device according to claim 1, wherein the degree of expansion and contraction of the probe provided separately from the probe on the probe card is measured by a camera, Adjust the probe needle pressure based on the measured value.

  A method for inspecting a semiconductor device according to claim 4 is the method for inspecting a semiconductor device according to claim 1, wherein the pressure due to contact between the probe provided on the probe card separately from the probe and the semiconductor wafer is measured, Adjust the probe needle pressure based on the measured value.

  The method for inspecting a semiconductor device according to claim 5 is the method for inspecting a semiconductor device according to claim 1, wherein the pressure due to contact between the measuring pad provided separately from the electrode portion on the semiconductor wafer and the probe is measured. Then, the needle pressure of the probe contacting the electrode portion is adjusted based on the measured value.

  The probe card according to claim 6 is a probe card used for a probe inspection which has a probe card main body and a probe which is provided on the probe card main body and abuts against an electrode portion of a chip of a semiconductor wafer and inspects the characteristics of the chip. Thus, an adjusting means is provided for adjusting the needle pressure applied to the electrode portion of the probe to a predetermined value in accordance with the degree of expansion and contraction of the probe due to the temperature condition change.

  The probe card according to claim 7 is the probe card according to claim 6, wherein the probe card body is provided with a camera for measuring the degree of expansion and contraction of the probe as an adjusting means, and the probe is based on the result measured by the camera. Adjusted the needle pressure.

  The probe card according to claim 8 is the probe card according to claim 6, wherein the probe card main body is provided with a detection needle different from the probe and a camera for measuring the degree of expansion and contraction of the detection needle. The needle pressure of the probe was adjusted based on the result of measurement at.

  The probe card according to claim 9 is the probe card according to claim 6, wherein the probe card body is provided with a detection needle different from the probe as an adjustment means, and the pressure measured by the contact between the detection needle and the semiconductor wafer is measured. The needle pressure of the probe was adjusted based on this.

  The probe card according to claim 10 is the probe card according to claim 6, wherein a measuring pad different from the electrode part is provided on the semiconductor wafer as the adjusting means, and the pressure due to contact between the probe and the measuring pad is measured. Based on the result, the needle pressure of the probe contacting the electrode portion is adjusted.

  According to the method for inspecting a semiconductor device of the present invention, when heating or cooling a semiconductor wafer, the needle pressure applied to the electrode portion of the probe is set to a predetermined value according to the degree of expansion and contraction of the probe due to temperature condition change. Therefore, the probe pressure of the probe of the probe card and the pad of the semiconductor wafer can always be made appropriate according to the temperature change of the semiconductor wafer at the time of probe inspection. Thus, the contact failure and the damage of the element are not generated, and the throughput is improved.

  According to the semiconductor device inspection method of the present invention, the degree of expansion and contraction of the probe is measured with a camera, and the probe pressure is adjusted based on the measured value. By measuring the degree of expansion and contraction and performing expansion when the expansion or contraction exceeds a predetermined set value, the needle pressure with the electrode portion can be kept constant regardless of changes in the expansion and contraction of the probe.

  According to the semiconductor device inspection method of the present invention, the degree of expansion and contraction of the probe provided separately from the probe on the probe card is measured with a camera, and the probe is detected based on the measured value. Since the needle pressure of the needle is adjusted, the same effect as in the second aspect can be obtained by measuring the degree of expansion / contraction of the detection needle instead of the probe.

  According to the semiconductor device inspection method of the present invention, the pressure due to contact between the probe provided on the probe card separately from the probe and the semiconductor wafer is measured, and the probe is measured based on the measured value. Since the needle pressure of the needle is adjusted, alignment can be performed when the detection needle applies a force greater than or equal to a predetermined needle pressure to the semiconductor wafer or does not reach the predetermined needle pressure. For this reason, since the needle pressure of the probe can be changed before the needle pressure of the probe changes, the contact between the probe and the electrode can always be kept optimal, and the distance and interval between the two can be restored. It is possible to execute the alignment for adjustment at the optimum timing determined to be necessary.

  In the present invention, according to the method for inspecting a semiconductor device according to claim 5, the pressure due to the contact between the measuring pad provided separately from the electrode part on the semiconductor wafer and the probe is measured, and the measured value is obtained. Based on this, the needle pressure of the probe that contacts the electrode is adjusted, so that alignment is performed when the probe is applied with a force greater than or equal to the predetermined needle pressure on the measurement pad or when the predetermined needle pressure is not reached. be able to. For this reason, since the needle pressure of the probe contacting the measurement pad can be changed before the needle pressure of the probe contacting the electrode portion changes, the same effect as in the third aspect can be obtained.

  According to the probe card of the present invention, since the probe card is provided with an adjusting means for adjusting the probe pressure to the electrode portion of the probe to a predetermined value according to the degree of expansion and contraction of the probe due to temperature condition change, When the semiconductor wafer is heated or cooled by the temperature adjustment function of the probe inspection device, the probe card adjustment means measures the degree of expansion and contraction of the probe according to the temperature change, and executes the alignment in the optimal situation. The needle pressure with respect to can be made constant.

  According to the probe card of the present invention, the probe card body is provided with a camera for measuring the degree of expansion and contraction of the probe as an adjusting means, and the probe needle pressure is determined based on the result measured by the camera. Therefore, when the expansion / contraction of the probe is measured and the expansion / contraction exceeds the set value, the alignment is executed to adjust the needle pressure with the electrode regardless of the expansion / contraction change of the probe. Can be kept constant.

  According to the probe card of the present invention, the probe card main body is provided with a probe different from the probe as the adjusting means and a camera for measuring the degree of expansion and contraction of the probe as an adjusting means. Since the needle pressure of the probe is adjusted based on the result, the same effect as in the seventh aspect can be obtained by measuring the expansion / contraction degree of the probe instead of the probe.

  In the present invention, according to the probe card of the ninth aspect, the probe card main body is provided with a probe different from the probe as the adjusting means, and the probe card is measured based on the result of measuring the pressure due to the contact between the probe and the semiconductor wafer. Since the needle pressure of the needle is adjusted, alignment can be performed when the detection needle exerts a force higher than a predetermined needle pressure on the semiconductor wafer or does not reach the predetermined needle pressure. For this reason, since the needle pressure of the probe can be changed before the needle pressure of the probe changes, the contact between the probe and the electrode can always be kept optimal, and the distance and interval between the two can be restored. It is possible to execute the alignment for adjustment at the optimum timing determined to be necessary.

  According to the probe card of the present invention, the probe card according to claim 10 is based on the result of measuring the pressure due to the contact between the probe and the measurement pad by providing a measurement pad different from the electrode part on the semiconductor wafer as the adjusting means. Therefore, the alignment of the probe when the probe is applied with a force higher than the specified needle pressure or does not reach the specified needle pressure is adjusted. Can be executed. For this reason, since the needle pressure of the probe that contacts the measurement pad can be changed before the needle pressure of the probe that contacts the electrode portion changes, the same effect as in the seventh aspect can be obtained.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a side view showing an outline of a probe inspection apparatus according to an embodiment of the present invention, and FIG. 2 is a side view showing the appearance of the probe card.

  As shown in FIG. 1, the temperature adjustment of the probe inspection apparatus 2 is performed in the probe inspection in which the probe 8 formed on the probe card 7 is brought into contact with the electrode portion of the chip of the semiconductor wafer 6 to inspect the characteristics of the chip. When the semiconductor wafer 6 is heated or cooled by the function, the needle pressure applied to the electrode portion of the probe 8 is adjusted to a predetermined value in accordance with the degree of expansion and contraction of the probe 8 due to the temperature condition change.

  In this case, the probe card 7 has a probe card main body 7 a and a probe 8 provided on the probe card main body 7 a and abutting against an electrode portion of a chip of the semiconductor wafer 6. In addition, a storage chamber 3 is formed in the center of the main body of the probe inspection apparatus 2, and a probe card 7, a semiconductor wafer 6 and instruments for holding them are provided. In addition, an operation panel 9 for operating various operations is provided outside.

  As an instrument for holding the semiconductor wafer 6, a wafer stage 4 on which the semiconductor wafer 6 to be inspected is mounted is provided in the center of the storage chamber 3. The wafer stage 4 has a semiconductor wafer 6 mounted on the upper surface thereof by a vacuum chuck method, and is moved by a signal from the tester 1.

  Further, a probe card holding part 5 is provided in the storage chamber 3 as an instrument for holding the probe card 7. A probe card 7 is attached to the probe card holding unit 5, and by performing wafer alignment, a probe (probe needle) 8 provided on the probe card 7 is an electrode portion of the semiconductor wafer 6 on the wafer stage 4. A certain pad is brought into contact with a predetermined needle pressure.

  The probe inspection apparatus 2 can group a plurality of chips on a wafer into groups and perform parallel simultaneous measurement on the chips belonging to the group. Then, after the inspection for one group is completed, the wafer stage 4 moves to inspect the next group.

  When the probe inspection is performed while changing the temperature conditions such as the high temperature atmosphere, the entire storage chamber 3 in the probe card inspection apparatus 2 is heated or cooled to bring the semiconductor wafer 6 and the probe card 7 to a desired temperature. At this time, the warp of the base (probe card body) 7a of the probe card 7 and the semiconductor wafer 6 and the probe 8 expand / contract due to the temperature change.

  For this reason, there is provided adjusting means for adjusting the needle pressure applied to the electrode portion of the probe to a predetermined value in accordance with the degree of expansion and contraction of the probe due to the temperature condition change. In this case, the probe card body 7a is provided with a camera 10 as an adjusting means for detecting the expansion / contraction rate due to the temperature condition of the probe (probe needle) 8 (see FIG. 2). The degree of expansion / contraction of the probe 8 is measured, and when the expansion / contraction exceeds an arbitrary set value, a command signal to the probe card inspection device 2 is issued to execute alignment. Thereby, the needle pressure with the pad 12 can be kept constant regardless of the expansion / contraction change of the probe 8. In addition, when the expansion and contraction further progresses with time, alignment is executed every time in the same procedure. At this time, since there are a plurality of probes 8, a reference probe may be determined, or an observation probe 11 for observation may be provided and measured by the camera 10. The probe 11 is made of the same material as the probe 8 in order to have the same expansion rate.

According to the present embodiment, according to the temperature change of the semiconductor wafer 6 during the probe inspection, it is possible to always make the needle pressure between the probe 8 of the probe card 7 and the pad 12 of the semiconductor wafer 6 appropriate. Contact failure and element damage that tend to occur sometimes do not occur, and throughput is improved.
(Second Embodiment)
Next, a second embodiment of the present invention will be described with reference to FIG.

  In this embodiment, in the first embodiment, a probe needle different from the probe is provided on the probe card body as the adjusting means, and the probe needle is based on the result of measuring the pressure due to the contact between the probe and the semiconductor wafer. The pressure was adjusted.

  That is, this is a method of handling the above-described detection needle 11 as a contact-type measuring device, not for observation. By making the probe 11 longer than the probe 8 for probe inspection, the probe 11 is brought into contact with the semiconductor wafer 6 or the pad 12 before the probe 8. In the case of heating, when the detection needle 11 exerts a force greater than a predetermined needle pressure on the semiconductor wafer 6 or the pad 12, a control signal for temporarily stopping is sent to the tester 1 and the probe inspection apparatus 2 and alignment is executed at the same time. In the case of cooling, a control signal is sent to the tester 1 and the probe inspection device 2 even when the probe needle 11 does not reach or touch the needle pressure on the wafer 6 or the pad 12 to execute alignment.

As described above, according to the probe card 7 of the present embodiment, when the probe inspection temperature condition is changed, the contact between the probe 8 that has expanded and contracted due to the change of the temperature condition and the pad 12 is always kept optimal. Alignment for readjusting the distance and interval between the two can be executed at an optimal timing that is determined to be necessary, the time required for probe inspection can be shortened, and the throughput is improved. It is also possible to make the detection needle 11 have the same length as that of the probe 8 and to use a material that has a greater degree of expansion than the probe 8.
(Third embodiment)
Next, a third embodiment of the present invention will be described with reference to FIG.

  In the present embodiment, in the first embodiment, a measurement pad different from the electrode section is provided on the semiconductor wafer as an adjusting means, and the electrode section is based on the result of measuring the pressure due to the contact between the probe and the measurement pad. The needle pressure of the probe in contact with the needle was adjusted.

  That is, in the second embodiment, the probe card 7 has the function of measuring the needle pressure between the probe 8 and the pad 12, but the semiconductor wafer 6 has the same function to measure the needle pressure. A measurement pad 13 different from the pad 12 formed on the semiconductor wafer 6 is provided. The pad 12 is an electrode part for probe inspection, but the measurement pad 13 is used for measuring the needle pressure with the probe 8. The measurement pad 13 is the same member as the pad 12. When the probe 8 is heated or cooled, the magnitude of the needle pressure due to expansion / contraction is detected, and a control signal is sent to the tester 1 to stop the inspection. At the same time, a control signal is sent to the probe inspection apparatus 2 to execute alignment.

  As described above, according to the semiconductor wafer 6 having the measurement pad 13 of the present embodiment, when the probe inspection temperature condition is changed, the change in the probe pressure due to the expansion / contraction of the probe 8 due to the temperature change is detected. By executing alignment at the optimal timing, it is possible to save extra time for probe inspection. Further, the present probe card 7 can be applied as it is without any modification.

  INDUSTRIAL APPLICABILITY The semiconductor device inspection method and the probe card according to the present invention can always perform appropriate probe inspection, prevent contact failure and element damage that tend to occur during probe inspection, and improve the throughput. For example, it is useful for probe inspection assuming the use temperature of the chip after commercialization.

It is a side view which shows the outline of the probe test | inspection apparatus in embodiment of this invention. It is explanatory drawing of the probe card and semiconductor wafer used for 1st-3rd embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Tester 2 Probe card inspection apparatus 3 Storage chamber 4 Wafer stage 5 Probe card holding part 6 Semiconductor wafer 7 Probe card 8 Probe (probe needle)
9 Operation panel 10 Camera 11 Detecting needle 12 Pad 13 Measurement pad

Claims (10)

  In the probe inspection for inspecting the characteristics of the chip by bringing a probe formed on the probe card into contact with the electrode portion of the chip of the semiconductor wafer, when the semiconductor wafer is heated or cooled, the temperature condition changes A method for inspecting a semiconductor device, comprising: adjusting a needle pressure applied to the electrode portion of the probe to a predetermined value according to a degree of expansion and contraction of the probe.   The semiconductor device inspection method according to claim 1, wherein the degree of expansion and contraction of the probe is measured with a camera, and the needle pressure of the probe is adjusted based on the measured value.   2. The semiconductor device according to claim 1, wherein a degree of expansion and contraction of a probe provided separately from the probe on the probe card is measured by a camera, and the needle pressure of the probe is adjusted based on the measured value. Inspection method.   2. The semiconductor device according to claim 1, wherein a pressure due to contact between a probe provided separately from the probe on the probe card and the semiconductor wafer is measured, and the probe pressure of the probe is adjusted based on the measured value. Inspection method.   Measures the pressure due to contact between the measurement pad provided separately from the electrode part on the semiconductor wafer and the probe, and adjusts the probe pressure of the probe contacting the electrode part based on the measured value A method for inspecting a semiconductor device according to claim 1.   A probe card having a probe card main body and a probe provided on the probe card main body and in contact with an electrode portion of a chip of a semiconductor wafer, and used for probe inspection for inspecting the characteristics of the chip, according to a change in temperature condition A probe card comprising adjustment means for adjusting a needle pressure applied to the electrode portion of the probe to a predetermined value according to the degree of expansion and contraction of the probe.   7. The probe card body as the adjusting means is provided with a camera for measuring the degree of expansion and contraction of the probe, and the needle pressure of the probe is adjusted based on a result measured by the camera. Probe card.   As the adjustment means, the probe card body is provided with a detection needle different from the probe and a camera for measuring the degree of expansion and contraction of the detection needle, and the probe needle is based on the result measured by the camera. The probe card according to claim 6, wherein the pressure is adjusted.   As the adjusting means, a probe needle different from the probe is provided in the probe card body, and the needle pressure of the probe is adjusted based on the result of measuring the pressure due to contact between the probe needle and the semiconductor wafer. The probe card according to claim 6.   As the adjusting means, a measurement pad different from the electrode part is provided on the semiconductor wafer, and the probe abutting on the electrode part based on a result of measuring a pressure due to contact between the probe and the measurement pad The probe card according to claim 6, wherein the needle pressure is adjusted.

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