JP2008105917A - Low temperature fired ceramic and multilayered circuit board using the same - Google Patents

Low temperature fired ceramic and multilayered circuit board using the same Download PDF

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JP2008105917A
JP2008105917A JP2006292864A JP2006292864A JP2008105917A JP 2008105917 A JP2008105917 A JP 2008105917A JP 2006292864 A JP2006292864 A JP 2006292864A JP 2006292864 A JP2006292864 A JP 2006292864A JP 2008105917 A JP2008105917 A JP 2008105917A
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ray intensity
serdian
thermal expansion
temperature fired
glass
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JP5037898B2 (en
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Shintaro Saito
愼太郎 齋藤
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Kyocera Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a low temperature fired ceramic satisfying both of high thermal expansion and chemical resistance and a multilayered circuit board using the same. <P>SOLUTION: The low temperature fired ceramic comprises quartz (Si), a monoclinic crystal (CM) of celsian and a hexagonal crystal (CH) of celsian as crystal phases, and when the X-ray intensity, by X-ray diffraction, of (101) plane of the quartz (Si) is expressed by A, the X-ray intensity of (112) plane of the monoclinic crystal (CM) of the celsian is expressed by B and the X-ray intensity of (101) plane of the hexagonal crystal (CH) of the celsian is expressed by C, the X-ray intensity ratio B/A is ≤0.2 and the intensity ratio of C/A is ≥0.6. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、配線導体として銅、銀などの低抵抗金属との同時焼成が可能な多層回路基板の絶縁基体として好適に使用される低温焼成磁器およびこれを用いた多層回路基板に関する。   The present invention relates to a low-temperature fired porcelain suitably used as an insulating substrate of a multilayer circuit board capable of simultaneous firing with a low-resistance metal such as copper or silver as a wiring conductor, and a multilayer circuit board using the same.

近年、高度情報化時代を迎え、情報伝達はより高速化、高周波化が進み、光通信や高速インターフェースといったGHzレベル以上の高周波信号を処理する電子機器として携帯電話やPDAなどモバイル機器が急速に発達している。   In recent years, with the advent of the advanced information era, information transmission has increased in speed and frequency, and mobile devices such as mobile phones and PDAs have rapidly developed as electronic devices that process high-frequency signals above GHz levels, such as optical communication and high-speed interfaces. is doing.

このような電子機器などに使用される配線基板としては、多層回路基板が用いられている。具体的には、ガラスセラミックスからなる絶縁基体(磁器)と、銅や銀からなる低抵抗の配線導体とを含む構成の多層回路基板である。   A multilayer circuit board is used as a wiring board used in such electronic devices. Specifically, the multilayer circuit board includes an insulating base (porcelain) made of glass ceramics and a low-resistance wiring conductor made of copper or silver.

ここで、多層回路基板においては、高熱膨張の外部回路基板(プリント配線基板)との接続信頼性を高めるために、絶縁基体(磁器)の高熱膨張化が求められている。さらに、製造工程におけるめっき処理の際に、絶縁基体(磁器)がめっき液によって侵食され、侵食された部分にめっき液が残留し、磁器表面に黒い残痕が残るという問題があることから、絶縁基体(磁器)にはめっき液による侵食が抑制されるように耐薬品性を備えることが求められている。   Here, in a multilayer circuit board, in order to increase the connection reliability with an external circuit board (printed wiring board) having a high thermal expansion, it is required to increase the thermal expansion of the insulating base (porcelain). Furthermore, during the plating process in the manufacturing process, there is a problem that the insulating substrate (porcelain) is eroded by the plating solution, the plating solution remains in the eroded part, and black marks remain on the porcelain surface. The substrate (porcelain) is required to have chemical resistance so that erosion by the plating solution is suppressed.

従来より、高熱膨張率と耐薬品性とを同時に満足する多層回路基板の開発が進められているが、熱膨張率を高くしようとすると耐薬品性が低下し、耐薬品性を向上させようとすると熱膨張率が低下するというように、熱膨張率と耐薬品性とは所謂トレードオフの関係にあり、高熱膨張率と耐薬品性とを同時に満足することは困難であった。   Conventionally, development of multilayer circuit boards that satisfy both high thermal expansion coefficient and chemical resistance at the same time has been underway, but trying to increase the thermal expansion coefficient decreases chemical resistance and attempts to improve chemical resistance. Then, the thermal expansion coefficient and chemical resistance are in a so-called trade-off relationship such that the thermal expansion coefficient decreases, and it is difficult to satisfy both the high thermal expansion coefficient and the chemical resistance at the same time.

例えば、BaOを含有するガラスと、金属酸化物およびコージェライトを含有する無機フィラーとからなる高熱膨張磁器組成物を焼成することで、コージェライトがガラスのBaO成分と反応してセルジアンを析出させ、耐薬品性を向上させた高熱膨張磁器が提案されている(特許文献1を参照。)。また、この特許文献1には、セルジアンが平均アスペクト比3以上の六方晶セルジアンとして析出することによって、破壊靱性が向上し、磁器強度が高くなることも示されている。
特開2003−40670号公報
For example, by firing a high thermal expansion porcelain composition comprising a glass containing BaO and an inorganic filler containing a metal oxide and cordierite, cordierite reacts with the BaO component of the glass to precipitate serdian, A high thermal expansion porcelain with improved chemical resistance has been proposed (see Patent Document 1). Patent Document 1 also shows that the fracture toughness is improved and the porcelain strength is increased by precipitating serdian as hexagonal serdian having an average aspect ratio of 3 or more.
JP 2003-40670 A

しかしながら、特許文献1に記載された高熱膨張磁器においては、六方晶セルジアンを析出させるためにコージェライトのフィラー比率を多くしているが、これにより熱膨張率が低下するという問題があった。   However, in the high thermal expansion porcelain described in Patent Document 1, the filler ratio of cordierite is increased in order to precipitate hexagonal serdian, but this has a problem that the thermal expansion coefficient is lowered.

本発明は、上記事情に鑑みてなされたもので、高熱膨張率および耐薬品性をともに満足する低温焼成磁器、低温焼成磁器組成物および多層回路基板を提供することを目的とする。   The present invention has been made in view of the above circumstances, and an object thereof is to provide a low-temperature fired ceramic, a low-temperature fired ceramic composition, and a multilayer circuit board that satisfy both a high thermal expansion coefficient and chemical resistance.

本発明は、クォーツ、セルジアンの単斜晶およびセルジアンの六方晶を結晶相として含み、X線回折による前記クォーツの(101)面のX線強度をA、前記セルジアンの単斜晶の(112)面のX線強度をB、前記セルジアンの六方晶の(101)面のX線強度をCとしたとき、X線強度比B/Aが0.2以下であり、X線強度比C/Aが0.6以上であることを特徴とする低温焼成磁器である。   The present invention includes quartz, Serdian monoclinic crystal and Serdian hexagonal crystal as crystal phases, and the X-ray intensity of the (101) plane of the quartz by X-ray diffraction is A, and the Serbian monoclinic (112) When the X-ray intensity of the plane is B and the X-ray intensity of the (101) plane of the Celsian hexagonal crystal is C, the X-ray intensity ratio B / A is 0.2 or less, and the X-ray intensity ratio C / A Is a low-temperature fired porcelain characterized by having a value of 0.6 or more.

また本発明は、コバルトを含有することを特徴とする低温焼成磁器である。   Further, the present invention is a low-temperature fired porcelain characterized by containing cobalt.

さらに本発明は、上記低温焼成磁器で形成された複数の絶縁層を積層してなる絶縁基体と、該絶縁基体の表面または内部に形成された配線導体とを含むことを特徴とする多層回路基板である。   The present invention further includes an insulating substrate formed by laminating a plurality of insulating layers formed of the low-temperature fired porcelain, and a wiring conductor formed on or in the surface of the insulating substrate. It is.

本発明によれば、低温焼成磁器組成物として酸化コバルトを混合していることで、単斜晶セルジアンを六方晶セルジアンに相転移させて多くの六方晶セルジアンを析出させることができ、高熱膨張率および耐薬品性をともに満足する低温焼成磁器および多層回路基板を得ることができる。   According to the present invention, by mixing cobalt oxide as a low-temperature fired porcelain composition, a monoclinic serdian can be phase-transformed into a hexagonal serdian to precipitate a large number of hexagonal serdians, which has a high thermal expansion coefficient. In addition, a low-temperature fired porcelain and a multilayer circuit board satisfying both chemical resistance and the chemical resistance can be obtained.

本発明の実施形態を説明する。
図1は本発明の低温焼成磁器の結晶状態を示す概略図であって、Qはクォーツ(SiO)、CHはセルジアン(BaAlSi)の六方晶(Hexagonal)、CMはセルジアン(BaAlSi)の単斜晶(Monoclinic)、Eはエンスタタイト(MgSiO)、aはガラスの非晶質の部分を示している。
An embodiment of the present invention will be described.
FIG. 1 is a schematic view showing a crystal state of a low-temperature fired ceramic according to the present invention, where Q is quartz (SiO 2 ), CH is hexagonal (Hexagonal) of Celsian (BaAl 2 Si 2 O 8 ), and CM is Celsian ( BaAl 2 Si 2 O 8 ) monoclinic crystal, E is enstatite (MgSiO 3 ), and a is an amorphous part of glass.

図1に示すように本発明の低温焼成磁器は、クォーツ、エンスタタイト、セルジアンの六方晶(六方晶セルジアン)およびセルジアンの単斜晶(単斜晶セルジアン)を結晶相として含んでいる。   As shown in FIG. 1, the low-temperature fired ceramic of the present invention contains quartz, enstatite, serdian hexagonal crystal (hexagonal serdian) and serdian monoclinic crystal (monoclinic serdian) as crystal phases.

ここで、XRD(X-ray diffraction、X線回折)によるクォーツ結晶の(101)面のX線強度Aに対する単斜晶セルジアンの(112)面のX線強度Bの比、すなわちX線強度比B/Aが0.2以下になっている。また、XRD(X-ray diffraction、X線回折)によるクォーツ結晶の(101)面のX線強度Aに対する六方晶セルジアンの(101)面のX線強度Cの比、すなわちX線強度比C/Aが0.6以上になっている。   Here, the ratio of the X-ray intensity B of the (112) plane of the monoclinic serdian to the X-ray intensity A of the (101) plane of the quartz crystal by XRD (X-ray diffraction), that is, the X-ray intensity ratio B / A is 0.2 or less. Further, the ratio of the X-ray intensity C of the (101) plane of hexagonal serdian to the X-ray intensity A of the (101) plane of the quartz crystal by XRD (X-ray diffraction), that is, the X-ray intensity ratio C / A is 0.6 or more.

クォーツは高熱膨張結晶相であることから、熱膨張率の観点からはクォーツがより多く析出しているのが好ましいが、磁器組成物としてクォーツを多く添加することで、熱処理後の磁器の緻密度が低下する恐れがある。また、低温焼成磁器中に結晶化していない非晶質のガラス部分が多いと、この非晶質のガラス部分がめっき液により侵食されやすい。したがって、クォーツの代替結晶相として高熱膨張結晶相を多く析出させる必要がある。   Since quartz is a high thermal expansion crystal phase, it is preferable that more quartz is precipitated from the viewpoint of the coefficient of thermal expansion, but by adding more quartz as a porcelain composition, the density of the porcelain after heat treatment is increased. May decrease. In addition, when there are many amorphous glass portions that are not crystallized in the low-temperature fired ceramic, the amorphous glass portions are easily eroded by the plating solution. Therefore, it is necessary to precipitate a large amount of high thermal expansion crystal phase as an alternative crystal phase of quartz.

ここで、クォーツの代替結晶相として六方晶セルジアンおよび単斜晶セルジアンが挙げられるが、単斜晶セルジアンよりも六方晶セルジアンのほうが高熱膨張であり、また酸およびアルカリに強い(耐薬品性に優れる)ことから、単斜晶セルジアンより六方晶セルジアンを多く、具体的には上記X線強度比を満足するように析出させているのが重要である。   Here, hexagonal celsian and monoclinic celsian are listed as alternative crystal phases of quartz, but hexagonal celsian has higher thermal expansion than monoclinic celsian and is more resistant to acids and alkalis (excellent chemical resistance). Therefore, it is important to deposit more hexagonal serdians than monoclinic serdians, specifically to satisfy the X-ray intensity ratio.

さらなる高熱膨張率化と耐薬品性の向上を図るためには、X線強度比B/Aが0.1以下であり、X線強度比C/Aが0.7以上であることが好ましい。 In order to further increase the coefficient of thermal expansion and improve the chemical resistance, the X-ray intensity ratio B / A is preferably 0.1 or less, and the X-ray intensity ratio C / A is preferably 0.7 or more.

図2においては、それぞれの結晶における複数あるピークとして、クォーツは丸、六方晶セルジアンは三角、単斜晶セルジアンは四角で表している。そして、X線強度比を求めるにあたり、クォーツについては(101)面のX線強度を選択し、六方晶セルジアンについては(101)面のX線強度を選択し、単斜晶セルジアンについては(112)面のX線強度を選択したのは、この部分に最大ピークが存在するからである。図2にはそれぞれの最大のピークとして、クォーツの(101)面のX線強度Aは黒丸、六方晶セルジアンの(101)面のX線強度Cは黒塗り三角、単斜晶セルジアンの(112)面のX線強度Bは黒塗り四角で表している。なお、比較例として図3には低温焼成磁器組成物に四三酸化コバルトを添加していないもののデータを点線で示しており、六方晶セルジアンの析出が少ないことがわかる。   In FIG. 2, as a plurality of peaks in each crystal, the quartz is represented by a circle, the hexagonal serdian is triangular, and the monoclinic serdian is represented by a square. In determining the X-ray intensity ratio, the X-ray intensity of the (101) plane is selected for quartz, the X-ray intensity of the (101) plane is selected for hexagonal serdian, and (112) for monoclinic serdian. The reason why the X-ray intensity of the surface is selected is that the maximum peak exists in this portion. In FIG. 2, the X-ray intensity A of the (101) plane of quartz is black circles, the X-ray intensity C of the (101) plane of hexagonal serdians is black triangles, and (112 ) Surface X-ray intensity B is represented by a black square. As a comparative example, FIG. 3 shows data of the low-temperature fired porcelain composition without addition of cobalt tetroxide by a dotted line, which indicates that hexagonal serdian precipitation is small.

なお、本発明の低温焼成磁器では、クォーツ、六方晶セルジアンおよび単斜晶セルジアンの他に、エンスタタイト等も析出している。また、化学分析によりコバルトが含まれていることも確認される。   In the low-temperature fired ceramic according to the present invention, enstatite and the like are precipitated in addition to quartz, hexagonal serdian and monoclinic serdian. It is also confirmed by chemical analysis that cobalt is contained.

そして、上述の低温焼成磁器を得るために、40〜50モル%のSiOと、5〜10モル%のAlと、24〜30モル%のMgOと、7〜10モル%のBと、7〜15モル%のBaOと、1〜3モル%のCaOとを含むガラス粉末に、フィラーとしてシリカおよび酸化コバルトが混合されている低温焼成磁器組成物を焼成することが重要である。 Then, in order to obtain a low-temperature fired porcelain described above, the SiO 2 of 40 to 50 mol%, 5-10 mol% Al 2 O 3, and 24-30 mol% of MgO, 7 to 10 mol% of B It is important to fire a low-temperature fired ceramic composition in which silica and cobalt oxide are mixed as fillers in a glass powder containing 2 O 3 , 7 to 15 mol% BaO, and 1 to 3 mol% CaO. It is.

ここで、低温焼成磁器組成物におけるガラス成分として、SiO、Al、MgO、B、BaO、CaOの各含有割合(モル%)を上記の範囲としたのは、以下の理由による。 Here, as the glass component in the low-temperature fired porcelain composition, the respective content ratios (mol%) of SiO 2 , Al 2 O 3 , MgO, B 2 O 3 , BaO, and CaO are in the above ranges. Depending on the reason.

SiOはガラスの網目構造をつくる成分であるため、SiOの含有量が40モル%未満であると各ガラス特性が劣化する可能性がある。特に、焼結性が著しく低下して磁器表面が緻密化されないため、耐薬品性が低下するおそれがある。一方、SiOの含有量が50モル%より多いと、焼成後の結晶の析出量が少なくなり、これに伴って高熱膨張結晶相である六方晶セルジアンの析出量も少なくなることから、低温焼成磁器の熱膨張率が低下する。 Since SiO 2 is a component that forms a network structure of glass, if the content of SiO 2 is less than 40 mol%, each glass characteristic may be deteriorated. In particular, since the sinterability is significantly reduced and the porcelain surface is not densified, the chemical resistance may be reduced. On the other hand, when the content of SiO 2 is more than 50 mol%, the amount of precipitated crystals after firing decreases, and accordingly, the amount of precipitated hexagonal serdian, which is a high thermal expansion crystal phase, also decreases. The coefficient of thermal expansion of the porcelain decreases.

Alの含有量が5モル%より少ないと、ガラスの化学的な耐久性が低下する(網目構造を切断してしまう)とともに、焼成後の結晶相としてセルジアンを析出させるのが難しくなることから、高熱膨張および耐薬品性を満足できなくなるおそれがある。Alの含有量が10モル%よりも多いと、ガラス粘度を下げて焼結性が悪くなり、磁器の開気孔率が低下する。 When the content of Al 2 O 3 is less than 5 mol%, the chemical durability of the glass is lowered (the network structure is cut), and it is difficult to precipitate serdian as a crystal phase after firing. For this reason, high thermal expansion and chemical resistance may not be satisfied. When the content of Al 2 O 3 is more than 10 mol%, to lower the glass viscosity sinterability is deteriorated, the open porosity of the porcelain is reduced.

MgOの含有量が24モル%未満であると、エンスタタイトの析出量が少なくなり低温焼成磁器の熱膨張率が低下する。また、ガラスを作製する際、ガラスを過熱溶融した後、融液を冷却する過程で結晶が析出(失透)、ガラスが分相しやすくなる。一方、MgOの含有量が30モル%より多いと、ガラスの粘度傾斜が緩くなることによって結晶化開始温度が高くなる点で有利であるが、低熱膨張結晶相であるコージェライトが析出する等により、磁器の熱膨張率が低下してしまう。   When the content of MgO is less than 24 mol%, the amount of enstatite deposited decreases, and the thermal expansion coefficient of the low-temperature fired ceramic decreases. Moreover, when producing glass, after overheating and melting the glass, crystals precipitate (devitrification) in the process of cooling the melt, and the glass is likely to be phase-separated. On the other hand, when the content of MgO is more than 30 mol%, it is advantageous in that the crystallization start temperature is increased by loosening the viscosity gradient of glass, but cordierite which is a low thermal expansion crystal phase is precipitated. The coefficient of thermal expansion of the porcelain will decrease.

の含有量が7モル%より少ないと、ガラスの粘度が上昇して転移点、屈伏点が高くなる。ガラスの転移点、屈伏点が上昇することにより、低温焼成が困難となるおそれがある。一方、Bの含有量が10モル%より多いと、ガラスの粘性が下がることにより低温焼成は可能になるが、ガラスの結晶化が阻害されて磁器中の非晶質が増加し、それにより必然的に結晶相が少ないことで磁器の熱膨張率が低下するおそれがある。 When the content of B 2 O 3 is less than 7 mol%, the viscosity of the glass increases and the transition point and yield point increase. If the glass transition point and yield point increase, low-temperature firing may become difficult. On the other hand, if the content of B 2 O 3 is more than 10 mol%, low temperature firing becomes possible due to the decrease in the viscosity of the glass, but the crystallization of the glass is inhibited and the amorphous in the porcelain increases, Accordingly, there is a possibility that the thermal expansion coefficient of the porcelain may decrease due to the fact that the crystal phase is inevitably small.

BaOの含有量が7モル%よりも少ないと、焼成後の結晶相としてセルジアンを析出させるのが難しく、高熱膨張、耐薬品性の良好な磁器を得ることができない。一方、BaOの含有量が15モル%よりも多いと、ガラスの化学的な耐久性が低下し(網目構造を切断し)、磁器の耐薬品性が低下するとともに誘電率が高くなることによる電気信号の遅延が懸念される。   When the content of BaO is less than 7 mol%, it is difficult to precipitate serdian as a crystal phase after firing, and a ceramic having high thermal expansion and good chemical resistance cannot be obtained. On the other hand, when the content of BaO is more than 15 mol%, the chemical durability of the glass is lowered (cutting the network structure), the chemical resistance of the porcelain is lowered and the dielectric constant is increased. There is concern about signal delay.

CaOの含有量が1モル%より少ないと、ガラス粘度が高温域で高くなりフィラーとの濡れ性を低下させる可能性がある。一方、CaOの含有量が3モル%より多いと、高温のガラス粘度を小さくすることが出来、フィラーとの濡れ性を向上させ、磁器の緻密化の効果が期待できるが、多量のCaOはコージェライトの析出原因となり、磁器の熱膨張係数が極端に低下するおそれがある。   When the content of CaO is less than 1 mol%, the glass viscosity is increased in a high temperature range and the wettability with the filler may be reduced. On the other hand, if the content of CaO is more than 3 mol%, the glass viscosity at high temperature can be reduced, the wettability with the filler can be improved, and the effect of densification of the porcelain can be expected. It may cause light precipitation, and the thermal expansion coefficient of the porcelain may be extremely reduced.

そして、上述のガラス粉末には、SiO(シリカ)粉末および酸化コバルト粉末が混合されているのが重要である。これらの含まれる量としては、ガラス55〜65体積%に対し、フィラーであるSiO(シリカ)を45〜35体積%、四三酸化コバルト(Co)を外添で0.1〜0.7体積%の割合とするのが好ましい。SiO(シリカ)粉末の量がこの範囲であれば、焼成後の低温焼成磁器の緻密度が適度であり、熱膨張率および誘電率も好ましい値を得ることができる。また、酸化コバルト、特に四三酸化コバルト(Co)の量がこの範囲であれば、X線強度比B/Aが0.2以下であり、X線強度比C/Aが0.6以上となるように六方晶セルジアンを多く析出させることができ、結晶化温度が低温になることもない。より好ましくは、ガラス58〜62体積%に対し、フィラーであるSiO(シリカ)を42〜38体積%、四三酸化コバルト(Co)を外添で0.1〜0.7体積%の割合とするのがよい。 And it is important that the above-mentioned glass powder is mixed with SiO 2 (silica) powder and cobalt oxide powder. The amount of these contained is 55 to 65% by volume of glass, and SiO 2 (silica) as a filler is 45 to 35% by volume, and cobalt trioxide (Co 3 O 4 ) is 0.1 to 0.1% by external addition. The ratio is preferably 0.7% by volume. When the amount of the SiO 2 (silica) powder is within this range, the density of the low-temperature fired ceramic after firing is appropriate, and preferable values can be obtained for the thermal expansion coefficient and the dielectric constant. In addition, when the amount of cobalt oxide, particularly tribasic cobalt oxide (Co 3 O 4 ) is within this range, the X-ray intensity ratio B / A is 0.2 or less, and the X-ray intensity ratio C / A is 0.00. A large amount of hexagonal serdian can be precipitated so as to be 6 or more, and the crystallization temperature does not become low. More preferably, with respect to 58 to 62% by volume of the glass, 42 to 38% by volume of SiO 2 (silica) as a filler and 0.1 to 0.7% by volume of cobalt trioxide (Co 3 O 4 ) by external addition. % Should be used.

フィラーとしてSiO(シリカ)粉末が混合されることにより、この低温焼成磁器組成物を焼成して得られる焼成低温焼成磁器がクォーツを含むこととなり、熱膨張率をあげることができる。ここで、SiO(シリカ)の平均粒径が1.0〜6.0μmであるのが好ましく、より好適には1.0〜4.0μmである。これにより、低温焼成磁器がより緻密化してボイド径およびボイド率を小さくすることができる。さらに、SiO(シリカ)の比表面積が5m/g以下であるのが好ましく、より好適には3m/g以下である。これにより、原料粉体をスラリー化した際に、粉体表面積に対する有機分の不足を緩和することができ、スラリー粘度を低くして成形性を向上させることができる。 By mixing SiO 2 (silica) powder as a filler, the fired low-temperature fired ceramic obtained by firing this low-temperature fired ceramic composition contains quartz, and the coefficient of thermal expansion can be increased. Here, the average particle diameter of SiO 2 (silica) is preferably 1.0 to 6.0 μm, and more preferably 1.0 to 4.0 μm. Thereby, the low-temperature fired porcelain can be further densified, and the void diameter and void ratio can be reduced. Furthermore, the specific surface area of SiO 2 (silica) is preferably 5 m 2 / g or less, more preferably 3 m 2 / g or less. Thereby, when the raw material powder is slurried, the shortage of organic content relative to the powder surface area can be alleviated, and the slurry viscosity can be lowered to improve the moldability.

また、酸化コバルトが混合されることにより、焼成後に結晶相として析出する単斜晶セルジアンを六方晶セルジアンに相転移させることができる。この相転移により六方晶セルジアンが多く析出しているのは、酸化コバルトを添加することによって不均一核生成がより多く発生しやすくなるためであると考えられる。六方晶セルジアンを析出させることによって、磁器の高熱膨張化及び耐薬品性の向上が図れる。ここで、酸化コバルトとしては、特に四三酸化コバルト(Co)が好適である。四三酸化コバルト(Co)は、酸化還元や熱処理の影響をあまり受けないために、例えば核形成剤として機能するTiO、ZrO等よりも適している。 Further, by mixing cobalt oxide, monoclinic serdian that precipitates as a crystalline phase after firing can be phase-transformed to hexagonal serdian. The reason why a large amount of hexagonal serdian is precipitated by this phase transition is considered to be that more heterogeneous nucleation is more likely to occur by adding cobalt oxide. By precipitating hexagonal serdian, it is possible to increase the thermal expansion of the porcelain and improve the chemical resistance. Here, as the cobalt oxide, cobalt trioxide (Co 3 O 4 ) is particularly preferable. Tricobalt tetraoxide (Co 3 O 4 ) is more suitable than, for example, TiO 2 , ZrO 2 or the like that functions as a nucleating agent because it is not significantly affected by redox or heat treatment.

このように、所謂核形成剤として機能する酸化コバルトを添加することにより、単斜晶セルジアンの析出が少なく、六方晶セルジアンの析出を多くすることができ、高熱膨張率および耐薬品性に優れた低温焼成磁器を得ることができる。   Thus, by adding cobalt oxide that functions as a so-called nucleating agent, the precipitation of monoclinic serdian is small, the precipitation of hexagonal serdian can be increased, and the high thermal expansion coefficient and chemical resistance are excellent. A low-temperature fired porcelain can be obtained.

次に、本発明の低温焼成磁器の製造方法について説明する。
まず、出発原料として、前記組成を有するガラス粉末と、SiO(シリカ)粉末および酸化コバルト粉末とを、焼成温度や熱膨張係数、析出する結晶相の量に応じて、所定の比率で混合する。即ち、SiOを40〜50モル%と、Alを5〜10モル%、MgOを24〜30モル%、Bを7〜10モル%、BaOを7〜15モル%、CaOを1〜3モル%含むガラス粉末に、SiO(シリカ)粉末および酸化コバルト粉末を混合する。ここで、ガラス粉末を55〜65体積%、フィラーであるSiO(シリカ)を45〜35体積%、四三酸化コバルト(Co)を外添で0.1〜0.7体積%の割合とするのが好ましい。より好ましくは、ガラス粉末を58〜62体積%、フィラーであるSiO(シリカ)を42〜38体積%、四三酸化コバルト(Co)を外添で0.1〜0.7体積%の割合とするのがよい。
Next, a method for manufacturing the low-temperature fired porcelain of the present invention will be described.
First, as a starting material, glass powder having the above composition, SiO 2 (silica) powder and cobalt oxide powder are mixed at a predetermined ratio according to the firing temperature, the thermal expansion coefficient, and the amount of precipitated crystal phase. . That is, the a SiO 2 40 to 50 mol%, Al 2 O 3 5 to 10 mol%, the MgO 24-30 mol%, the B 2 O 3 7 to 10 mol%, 7-15 mol% of BaO, SiO 2 (silica) powder and cobalt oxide powder are mixed with glass powder containing 1 to 3 mol% of CaO. Here, 55 to 65% by volume of glass powder, 45 to 35% by volume of SiO 2 (silica) as a filler, and 0.1 to 0.7% by volume of cobalt trioxide (Co 3 O 4 ) by external addition. It is preferable to set the ratio. More preferably, the glass powder is 58 to 62% by volume, the filler SiO 2 (silica) is 42 to 38% by volume, and cobalt trioxide (Co 3 O 4 ) is 0.1 to 0.7% by external addition. % Should be used.

このように配合されたガラス粉末とSiO(シリカ)粉末と酸化コバルト粉末との混合物に適当な有機バインダーを添加した後、所望の成型手段、例えば、ドクターブレード、圧延法、金型プレス等により所定の形状に成型後、焼成する。焼成にあたっては、まず、成型のために配合した有機バインダー成分を除去する。有機バインダーの除去は、大気雰囲気中または窒素雰囲中500〜750℃前後で約3時間行われる。このとき、成型体の収縮開始温度は700〜850℃程度であることが望ましく、かかる収縮開始温度がこれより低いと有機バインダーの除去が困難になるため、成形体中のガラス粉末の特性、特に転移点、屈伏点を制御することが望ましい。その後、850℃〜1050℃の温度範囲で約1時間焼成して得られることを特徴とし、特に、900〜950℃が好ましい。この時の焼成温度が850℃より低いと緻密化することが難しく、さらに1050℃を越えると後述する配線基板を作成する場合に、銅や銀などのメタライズ配線層との同時焼成が困難となる。なお、この場合の焼成雰囲気は用いるメタライズ配線層の金属種によって適宜選択され、例えば銅を用いる場合は非酸化性雰囲気が好適であり、銀を用いる場合は酸化性雰囲気が好適である。 After adding an appropriate organic binder to the mixture of glass powder, SiO 2 (silica) powder, and cobalt oxide powder blended in this manner, the desired molding means such as a doctor blade, a rolling method, a die press, etc. After molding into a predetermined shape, firing is performed. In baking, the organic binder component mix | blended for shaping | molding is removed first. The removal of the organic binder is performed at about 500 to 750 ° C. for about 3 hours in an air atmosphere or a nitrogen atmosphere. At this time, the shrinkage start temperature of the molded body is desirably about 700 to 850 ° C., and if the shrinkage start temperature is lower than this, it becomes difficult to remove the organic binder. It is desirable to control the transition point and yield point. Then, it is obtained by baking for about 1 hour in a temperature range of 850 ° C. to 1050 ° C., and 900 to 950 ° C. is particularly preferable. If the firing temperature at this time is lower than 850 ° C., it is difficult to densify, and if it exceeds 1050 ° C., simultaneous firing with a metallized wiring layer such as copper or silver becomes difficult when a wiring board to be described later is formed. . The firing atmosphere in this case is appropriately selected depending on the metal type of the metallized wiring layer to be used. For example, when copper is used, a non-oxidizing atmosphere is preferable, and when silver is used, an oxidizing atmosphere is preferable.

そして、このように製造された低温焼成磁器で形成された複数の絶縁層からなる絶縁基体と、絶縁基体の表面または内部に形成された配線導体とを含む構成により、長期信頼性に優れる多層回路基板が得られる。   A multi-layer circuit having excellent long-term reliability due to a configuration including an insulating base composed of a plurality of insulating layers formed of a low-temperature fired porcelain manufactured in this way and a wiring conductor formed on or inside the insulating base. A substrate is obtained.

以下、本発明の低温焼成磁器について実施例に基づき具体的に説明する。
まず、ガラス粉末として、表1に示すガラス組成のガラス粉末と、SiO(シリカ)粉末と、四三酸化コバルト(Co)粉末とを、ガラス粉末60質量%、SiO粉末を40質量%、Co粉末を0.5質量%の割合となるように秤量混合した。ここで、ガラス粉末の平均粒径は2.0μm、SiO(シリカ)の平均粒径は1.5μm、Coの平均粒径は3.7μmとした。
Hereinafter, the low-temperature fired porcelain of the present invention will be specifically described based on examples.
First, as a glass powder, a glass powder having a glass composition shown in Table 1, a SiO 2 (silica) powder, a tribasic cobalt oxide (Co 3 O 4 ) powder, 60% by mass of a glass powder, and a SiO 2 powder of 40%. Mass% and Co 3 O 4 powder were weighed and mixed so that the ratio was 0.5 mass%. Here, the average particle diameter of the glass powder was 2.0 μm, the average particle diameter of SiO 2 (silica) was 1.5 μm, and the average particle diameter of Co 3 O 4 was 3.7 μm.

次に、この混合物を粉砕後、有機バインダー、有機溶剤を添加し十分混合してスラリーを作製しドクターブレード法により厚み100μmのグリーンシートを作製した。得られたグリーンシートを積層した後、725℃の水蒸気を含有する窒素雰囲気中にて3時間かけて脱バインダー処理を施した後、900℃の温度で1時間かけて本焼成を行なった。なお、昇温速度は300℃/Hrとした。   Next, after pulverizing this mixture, an organic binder and an organic solvent were added and mixed well to prepare a slurry, and a green sheet having a thickness of 100 μm was prepared by a doctor blade method. After laminating the obtained green sheets, the binder was treated for 3 hours in a nitrogen atmosphere containing 725 ° C. water vapor, followed by firing at 900 ° C. for 1 hour. The temperature rising rate was 300 ° C./Hr.

このようにして得られた低温焼成磁器に対して、まず、乳鉢でこの磁器を粉砕し、X線回折装置(XRD)により析出結晶のX線強度(ピーク)を求めた。測定条件は、2θを10°〜60°の範囲で、Kα1を解析した。   For the low-temperature fired porcelain thus obtained, this porcelain was first pulverized in a mortar, and the X-ray intensity (peak) of the precipitated crystal was determined by an X-ray diffractometer (XRD). As the measurement conditions, 2α was in the range of 10 ° to 60 °, and Kα1 was analyzed.

図2に示すように、本発明におけるクォーツのX線強度Aは(101)面のピーク(2θ=26.639)、単斜晶セルジアンのX線強度Bは(112)面のピーク(2θ=25.644)、六方晶セルジアンのX線強度Cは(101)面のピーク(2θ=22.487)であり、これらのX線強度に基づいてX線強度比B/AおよびX線強度比C/Aを求めた。   As shown in FIG. 2, the X-ray intensity A of quartz in the present invention is the peak of (101) plane (2θ = 26.639), and the X-ray intensity B of monoclinic serdian is the peak of (112) plane (2θ = 25.644), the X-ray intensity C of hexagonal serdian is the peak of (101) plane (2θ = 2.487), and based on these X-ray intensities, the X-ray intensity ratio B / A and the X-ray intensity ratio C / A was determined.

また、熱膨張係数は熱機械分析装置を用いて室温から400℃における熱膨張曲線をとり求めた。また、耐薬品性を確認するために、焼成後の磁器をめっき液に浸透させ、めっき前後の重量差から重量減少率(めっき前の重量からめっき後の重量を減じ、得られた値をめっき前の重量で割った値)を求めた後、レッドチェック探傷液で表面の染色度合いを観察した。その結果を表1に示す。

Figure 2008105917
The thermal expansion coefficient was obtained by taking a thermal expansion curve from room temperature to 400 ° C. using a thermomechanical analyzer. In order to check the chemical resistance, the porcelain after firing is infiltrated into the plating solution, and the weight reduction rate (subtracting the weight after plating from the weight before plating from the weight difference before and after plating) After obtaining the value divided by the previous weight, the degree of surface staining was observed with a red check flaw detection liquid. The results are shown in Table 1.
Figure 2008105917

表1に示す結果によれば、試料No3、5、8、10、12、14、16で熱膨張率及び耐薬品性を満足することができなかった。   According to the results shown in Table 1, Samples Nos. 3, 5, 8, 10, 12, 14, and 16 could not satisfy the thermal expansion coefficient and chemical resistance.

具体的には、試料No.3は、ガラス中のSiOが40モル%未満で、X線強度比B/Aが0.2を超えていることから、耐薬品性が低下している。また、試料No.5は、ガラス中のSiOが50モル%を超え、X線強度比C/Aが0.6未満であることから、熱膨張率が低下している。試料No.8は、ガラス中のAlが5モル%未満で、X線強度比C/Aが0.6未満であることから、熱膨張率が低下している。試料No.10は、ガラス中のAlが10モル%を超え、X線強度比B/Aが0.2を超えていることから、耐薬品性が低下している。試料No.12は、ガラス中のMgOが30モル%を超え、X線強度比C/Aが0.6未満であることから、熱膨張率が低下している。試料No.14は、ガラス中のMgOが24モル%未満で、X線強度比B/Aが0.2を超えていることから、熱膨張率が低下している。試料No.16は、ガラス中のBが10モル%を超え、X線強度比C/Aが0.6未満であることから、熱膨張率が低下している。 Specifically, Sample No. In No. 3, since the SiO 2 in the glass is less than 40 mol% and the X-ray intensity ratio B / A exceeds 0.2, the chemical resistance is lowered. Sample No. In No. 5, since the SiO 2 in the glass exceeds 50 mol% and the X-ray intensity ratio C / A is less than 0.6, the coefficient of thermal expansion is lowered. Sample No. In No. 8, since Al 2 O 3 in the glass is less than 5 mol% and the X-ray intensity ratio C / A is less than 0.6, the coefficient of thermal expansion is lowered. Sample No. No. 10, since the Al 2 O 3 in the glass exceeds 10 mol% and the X-ray intensity ratio B / A exceeds 0.2, the chemical resistance is lowered. Sample No. No. 12, since the MgO in the glass exceeds 30 mol% and the X-ray intensity ratio C / A is less than 0.6, the thermal expansion coefficient is lowered. Sample No. In No. 14, since the MgO in the glass is less than 24 mol% and the X-ray intensity ratio B / A exceeds 0.2, the coefficient of thermal expansion is lowered. Sample No. No. 16 has a B 2 O 3 content exceeding 10 mol% in the glass and an X-ray intensity ratio C / A of less than 0.6.

また、比較例として示した図3によれば、低温焼成磁器組成物に四三酸化コバルトを添加しないと六方晶セルジアンの析出が少ない。   Further, according to FIG. 3 shown as a comparative example, the hexagonal serdian is less precipitated unless cobalt tetraoxide is added to the low-temperature fired porcelain composition.

これに対し、本発明は高熱膨張率および耐薬品性をともに満足していることがわかる。   In contrast, it can be seen that the present invention satisfies both the high thermal expansion coefficient and chemical resistance.

本発明の低温焼成磁器の一例を示す説明図である。It is explanatory drawing which shows an example of the low-temperature baking ceramics of this invention. X線回折による測定結果を示すグラフである。It is a graph which shows the measurement result by X-ray diffraction. 比較例としての、四三酸化コバルトを添加していない状態のX線回折による測定結果を示すグラフである。It is a graph which shows the measurement result by the X-ray diffraction of the state which has not added tribasic cobalt oxide as a comparative example.

符号の説明Explanation of symbols

Si:クォーツ結晶相
CH:六方晶セルジアン
CM:単斜晶セルジアン
E:エンスタタイト
a:ガラスの非晶質の部分
Si: Quartz crystal phase CH: Hexagonal serdian CM: Monoclinic serdian E: Enstatite a: Amorphous part of glass

Claims (3)

クォーツ、セルジアンの単斜晶およびセルジアンの六方晶を結晶相として含み、
X線回折による前記クォーツの(101)面のX線強度をA、前記セルジアンの単斜晶の(112)面のX線強度をB、前記セルジアンの六方晶の(101)面のX線強度をCとしたとき、X線強度比B/Aが0.2以下であり、X線強度比C/Aが0.6以上であることを特徴とする低温焼成磁器。
Quartz, Serdian monoclinic and Serdian hexagonal as crystal phases,
According to X-ray diffraction, the X-ray intensity of the (101) plane of the quartz is A, the X-ray intensity of the (112) plane of the Serbian monoclinic crystal is B, and the X-ray intensity of the (101) plane of the Serbian hexagonal crystal Is a low-temperature fired porcelain, wherein the X-ray intensity ratio B / A is 0.2 or less and the X-ray intensity ratio C / A is 0.6 or more.
コバルトを含有することを特徴とする請求項1に記載の低温焼成磁器。 The low-temperature-fired porcelain according to claim 1, comprising cobalt. 請求項1または請求項2に記載の低温焼成磁器で形成された複数の絶縁層を積層してなる絶縁基体と、該絶縁基体の表面または内部に形成された配線導体とを含むことを特徴とする多層回路基板。 An insulating base formed by laminating a plurality of insulating layers formed of the low-temperature fired ceramic according to claim 1 or 2, and a wiring conductor formed on or inside the insulating base, Multi-layer circuit board.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002053368A (en) * 2000-04-27 2002-02-19 Kyocera Corp Porcelain excellent in high-frequency characteristic and its manufacturing method
JP2002167265A (en) * 2000-11-29 2002-06-11 Kyocera Corp Porcelain composition baked at low temperature, porcelain baked at low temperature and wiring board using it
JP2003342060A (en) * 2002-05-23 2003-12-03 Kyocera Corp Glass ceramic sintered compact and wiring board
JP2005047731A (en) * 2003-07-30 2005-02-24 Ngk Spark Plug Co Ltd Low temperature fired ceramic composition, its manufacturing method, and wiring board using the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002053368A (en) * 2000-04-27 2002-02-19 Kyocera Corp Porcelain excellent in high-frequency characteristic and its manufacturing method
JP2002167265A (en) * 2000-11-29 2002-06-11 Kyocera Corp Porcelain composition baked at low temperature, porcelain baked at low temperature and wiring board using it
JP2003342060A (en) * 2002-05-23 2003-12-03 Kyocera Corp Glass ceramic sintered compact and wiring board
JP2005047731A (en) * 2003-07-30 2005-02-24 Ngk Spark Plug Co Ltd Low temperature fired ceramic composition, its manufacturing method, and wiring board using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102060516A (en) * 2009-11-18 2011-05-18 日本碍子株式会社 Sintered ceramic body, manufacturing method thereof, and ceramic structure
EP2332893A1 (en) 2009-11-18 2011-06-15 NGK Insulators, Ltd. Sintered ceramic body, manufacturing method thereof, and ceramic structure
US8603625B2 (en) 2009-11-18 2013-12-10 Ngk Insulators, Ltd. Sintered ceramic body, manufacturing method thereof, and ceramic structure
US9073789B2 (en) 2009-11-18 2015-07-07 Ngk Insulators, Ltd. Sintered ceramic body, manufacturing method thereof, and ceramic structure

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