JP2008103741A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device Download PDF

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Publication number
JP2008103741A
JP2008103741A JP2007286926A JP2007286926A JP2008103741A JP 2008103741 A JP2008103741 A JP 2008103741A JP 2007286926 A JP2007286926 A JP 2007286926A JP 2007286926 A JP2007286926 A JP 2007286926A JP 2008103741 A JP2008103741 A JP 2008103741A
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Japan
Prior art keywords
mold
film
lower
upper
semiconductor device
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JP2007286926A
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Japanese (ja)
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JP4778494B2 (en
Inventor
Yoichi Kawada
Bunji Kuratomi
Fukumi Shimizu
文司 倉冨
洋一 河田
福美 清水
Original Assignee
Renesas Eastern Japan Semiconductor Inc
Renesas Technology Corp
株式会社ルネサステクノロジ
株式会社ルネサス東日本セミコンダクタ
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Priority to JP2007286926A priority Critical patent/JP4778494B2/en
Publication of JP2008103741A publication Critical patent/JP2008103741A/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

Abstract

An object of the present invention is to improve product yield by reducing mold defects in a mold using a film.
Before placing a chip assembly in a cavity, a mold is clamped empty, and a resin filling portion formed by the empty clamp is sealed by an O-ring, and the upper side is closed in this sealed state. By sucking the film 8 and the lower film 9 and placing the films along the inner surfaces of the cavities 11a and 12a, and then performing mold molding by placing the chip assembly in the cavity 12a and performing mold clamping, respectively. Since the mold resin can be filled in the state in which the film is placed along the inner surfaces of the cavities 11a and 12a, it is possible to prevent the upper film 8 from hanging down and the lower film 9 from being lifted, and by the contact of the upper film 8 with the bonding wire. Wire breakage can be prevented.
[Selection] Figure 9

Description

  The present invention relates to a semiconductor manufacturing technique, and more particularly to a technique effective when applied to a mold performed by disposing a release film on a mold surface of a mold.

  As a molding method using a film, a technique is described in which a resin is filled from a gap portion between a film and a molded product without molding gas (for example, see Patent Document 1).

  In addition, a technique is described in which molding is performed by clamping the side surface and the outer surface of the semiconductor chip and the outer surface of the electrical insulating layer by clamping the molded product through a film (for example, see Patent Document 2).

Furthermore, a technique for adjusting the amount of film compression at the time of clamping the mold by installing an abutment block that adjusts the distance between the clamping surfaces of the upper and lower molds in the mold is described (for example, patents). Reference 3).
JP-A-8-197567 JP-A-10-92856 JP-A-8-156014

  In a mold using a film, the mold is performed in a state where the cavity is decompressed (exhaust) and the film is sucked toward the inner surface of the cavity.

  Accordingly, the mold surface of the mold is provided with an O-ring (seal material) that seals the cavity and the resin flow path (resin filling portion) such as the cull and runner communicating with the cavity, and performs mold clamping. In order to improve the sealing effect of the resin-filled portion including the cavities at the time, the O-ring is disposed so as to slightly protrude from the mold surface.

  In the mold of the resin-sealed semiconductor device, since the O-ring protrudes from the mold surface as described above, a step is generated between the O-ring and the film, and a gap is formed there. Exhaust leakage occurs during decompression.

  As a result, the suction of the film becomes insufficient, and when the mold resin is filled into the cavity, the film hangs down in the upper mold cavity, and bonding such as gold wire in the chip assembly in which chip mounting or wire bonding is performed The film comes into contact with the wire, causing a problem of wire breakage.

On the other hand, in the lower mold cavity, the film floats up, the chip support substrate of the chip assembly is pushed up by the film lifted up due to insufficient suction, and the arrangement of the chip assembly in the cavity is not appropriate, As a result, there arises a problem that a mold failure occurs such that a portion other than the back surface of the chip support substrate is exposed from the sealing portion.

  An object of the present invention is to provide a technique capable of reducing mold defects and improving yield.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.

  That is, the present invention provides a first mold surface, an upper mold having a cavity formed in the first mold surface, a second mold surface facing the first mold surface, and the second mold. A step of preparing a mold comprising a suction hole formed in the surface, and a lower mold having a sealing material provided around the suction hole, a step of preparing a film, and a semiconductor chip A step of preparing an assembly, a step of disposing the film between the first mold surface and the second mold surface, sucking the film through the suction holes, and then molding the film into the mold A step of closely contacting the second mold surface of the mold; a step of disposing the assembly on the second mold surface of the mold mold via the film; and the upper mold and the lower mold. Clamping process and mold resin in the cavity A step of supplying and forming a sealing portion for sealing the semiconductor chip, a step of opening the upper die and the lower die, and the assembly formed with the sealing portion from the mold And a step of releasing the mold.

  The present invention further includes a first mold surface, a suction hole formed in the first mold surface, a cavity formed in the first mold surface, and a sealing material provided around the cavity. A step of preparing a mold comprising a mold and a lower mold having a second mold surface facing the first mold surface; a step of preparing a film; and an assembly including a semiconductor chip. A step of preparing, a step of disposing the film between the first mold surface and the second mold surface, sucking the film through the suction hole, and removing the film from the mold A step of closely contacting the first mold surface, a step of placing the assembly in the cavity of the mold die, a step of clamping the upper die and the lower die, and a mold resin in the cavity. And sealing the semiconductor chip Forming a sealing portion that, the step of opening the mold the lower mold and the upper mold is the assembly in which the sealing portion is formed to include a step of releasing from the mold.

  Of the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  (1). Before placing the chip assembly during molding, empty the mold mold and seal the resin filling part with a sealing material, suck the film in this sealed state and place the film along the cavity inner surface, then mold once After opening and placing the chip assembly in the cavity, it is possible to fill the mold resin with the film along the cavity inner surface by re-clamping and performing the mold. Prevents drooping and lifting of the lower film. Thereby, wire breakage at the time of molding can be prevented, and molding defects such as exposure of portions other than the back surface of the chip support substrate from the sealing portion can be prevented.

  (2). With the above (1), the yield of the semiconductor device can be improved.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

  In the following embodiments, for convenience, a plurality of inventions are described in a single series of embodiments. However, unless otherwise specified, each step is not necessarily essential for all inventions. Needless to say.

  Further, in the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments, but they are not irrelevant to each other unless otherwise specified. Is related to some or all of the other modification, details, supplementary explanation, and the like.

  Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), particularly when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and it may be more or less than the specific number.

  Further, in the following embodiments, the constituent elements (including element steps) are not necessarily essential unless explicitly stated or considered to be clearly essential in principle. Needless to say.

  Similarly, in the following embodiments, when referring to the shape, positional relationship, etc., of components, etc., the shape of the component is substantially the case unless specifically stated or otherwise considered in principle. And the like are included. The same applies to the numerical values and ranges.

  Further, in the following embodiments, when referred to as a “chip assembly”, a semiconductor chip and a chip support substrate to which the semiconductor chip is fixed, a bonding wire for electrically connecting the semiconductor chip and the chip support substrate, and a chip support substrate It represents an assembly including a frame member to be supported, and includes an assembly in which a sealing portion is formed by a mold.

  Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.

(Embodiment)
FIG. 1 is a schematic configuration diagram showing an example of an embodiment of the structure of a molding apparatus used in the method for manufacturing a semiconductor device of the present invention, and FIG. 3 is a plan view showing the structure of the upper mold in the mold shown in FIG. 2, FIG. 4 is a plan view showing the structure of the lower mold in the mold shown in FIG. 2, and FIG. 5 is the mold shown in FIG. FIG. 6 is a view showing the structure of a BGA which is an example of a semiconductor device assembled using the method for manufacturing a semiconductor device of the present invention, and FIG. 6 (a) is a plan view. FIGS. 7A and 7B are cross-sectional views, FIG. 7 is a bottom view showing the structure of the BGA shown in FIG. 6, and FIGS. FIG. 9 shows a method for manufacturing a semiconductor device according to the present invention. FIGS. 10A, 10B, 10C, and 10D are enlarged partial cross-sectional views showing an example of the suction state of the film at the time of empty clamping. FIG. FIG. 11A and FIG. 11B are partial cross-sectional views showing an example of the state of the primary clamp in the two-stage clamp of the mold die in the method for manufacturing a semiconductor device of the present invention. (A), (b), (c) is a partial sectional view showing an example of the state of the secondary clamp in the two-stage clamp of the mold of the manufacturing method of the semiconductor device of the present invention, FIGS. ), (C), (d), (e), (f) are conceptual diagrams showing an example of the state of resin injection into the cavity during molding in the method of manufacturing a semiconductor device of the present invention, and FIG. It is an expanded partial sectional view showing an example of the decompression state of the cavity at the time of molding in the manufacturing method of the apparatus (A) is a state before decompression, (b) is a decompression start state, FIG. 15 is a partial sectional view showing an example of a resin injection state into a cavity at the time of molding in the semiconductor device manufacturing method of the present invention, and FIG. FIG. 17 is an enlarged partial plan view showing a structure of a suction passage for an upper mold cavity in the mold shown in FIG. 2, and FIG. 17 is a partial plan view showing an example of a state in which a chip assembly is arranged in the lower mold in the mold apparatus shown in FIG. FIG. 18 is a manufacturing process flow chart showing an example of an embodiment of a manufacturing process in the semiconductor device manufacturing method of the present invention.

  The mold apparatus used in the method of manufacturing a semiconductor device according to the present embodiment shown in FIG. 1 is an upper mold (first mold) in a mold step of an assembly process of a resin-encapsulated semiconductor device. The upper side (first side) film 8 (second film) and the lower side (second side) film 9 (first side), which are a pair of films on the 11 side and the lower mold (second mold) 12 side The semiconductor chip 1 shown in FIG. 6B is molded using a film, and is a transfer type molding apparatus.

  This mold apparatus is also called a laminate mold apparatus. In this embodiment, a BGA (Ball Grid Array) 30 shown in FIG. 6 will be described as an example of a semiconductor device molded by the mold apparatus.

  The structure of the molding apparatus shown in FIG. 1 will be described. Molding is performed, and the upper mold 11 and the lower mold 12 that form a pair and form the mold 10, and die bonding and wire bonding are completed. Loader unit 13 for setting the chip assembly 7 to the frame alignment unit 16, the frame alignment unit 16 for aligning and positioning the chip assembly 7, a tablet (a material obtained by solidifying the mold resin 29 shown in FIG. 12), and a chip. A frame carrier 15 that holds the assembly 7 and conveys both to the mold 10, and after completion of mold opening after filling with the mold resin 29, the chip assembly 7 is held and the lower side on the lower die 12 A frame chuck for peeling the chip assembly 7 from the film 9 is provided, and the chip assembly 7 is carried to the frame storage unit 14. 2 and a movable pot cleaner for cleaning the inside of the pot 12c by sucking the resin burrs in the pot 12c shown in FIG. It consists of a part 24 (see FIG. 5) and a frame storage part 14 for storing the chip assembly 7 after molding.

  Furthermore, the molding apparatus of the present embodiment includes an upper film supply roller 19 that feeds the upper film 8 and an upper film winding roller 20 that winds the upper film 8 as a transport system for the upper film 8 and the lower film 9. A lower film supply roller 21 for feeding the lower film 9, a lower film winding roller 22 for winding the lower film 9, and a plurality of guide rollers 23 for guiding the conveyance of the upper film 8 and the lower film 9; Is provided.

  Further, the upper die 11 in the mold 10 of the molding apparatus shown in FIG. 1 corresponds to the shape of the substrate supporting lead 3a of the BGA 30 and the sealing portion 6 on the upper side of the BGA substrate 2 (chip supporting substrate) shown in FIG. Similarly, the lower mold 12 has a cavity 12a corresponding to the shape of the lower sealing portion 6 (sealing portion 6 formed on the side surface of the BGA substrate 2) of the substrate support lead 3a. When these cavities 11a and 12a are combined, the shape of the sealing portion 6 including the BGA substrate 2 is formed.

  In the BGA 30 described in the present embodiment, as shown in FIG. 6, a plurality of bump electrodes 5 as external terminals are attached to the back surface (surface opposite to the chip support surface 2b) 2c of the BGA substrate 2. The back surface 2c of the BGA substrate 2 cannot be molded.

  Therefore, in the molding apparatus shown in FIG. 1, when the mold resin 29 is injected, the lower film 9 is brought into close contact with the back surface 2 c of the BGA substrate 2, whereby the mold resin 29 is transferred from the side surface of the BGA substrate 2 to the back surface 2 c side. Intrusion can be prevented.

  However, when the mold resin 29 is injected, the side periphery of the BGA substrate 2 can be molded by inserting the mold resin 29 around the BGA substrate 2 side of the substrate support lead 3a.

  That is, in the BGA 30, the sealing portion 6 is formed not only on the front side of the substrate support lead 3 a but also on the BGA substrate 2 side of the substrate support lead 3 a, that is, on the side surface peripheral portion of the lower BGA substrate 2.

  Therefore, the mold 10 provided in the molding apparatus is of a double-sided mold type.

  Further, as shown in FIG. 3, the upper mold 11 includes a cull 11b that becomes a branch point of the flow path when the mold resin 29 flows into the cavity 11a, a runner 11c and a gate 11d that communicate with this, and a gas vent. An air vent 11e is formed.

  On the other hand, as shown in FIG. 4, the lower mold 12 is formed with a plunger 12b that pushes the mold resin 29 onto the cull 11b and a pot 12c that is a supply port for the mold resin 29 that forms a pair with the plunger 12b.

  The molding apparatus shown in FIG. 1 is of a multi-pot type transfer system, and is provided with two pots 12c for one mold 10 and four cavities for each pot 12c. 11a and 12a are formed.

  Therefore, the molding apparatus can simultaneously form eight sealing portions 6 of the BGA 30 with one mold die 10.

  Further, since the molding apparatus is of a multi-pot type, the lower mold 12 is formed with two cylindrical pots 12c passing therethrough, and at the time of molding, the pot 12c is melted to be molded resin 29. A cylindrical tablet is set.

  That is, in the molding apparatus, the lower mold 12 is on the operating side, and when the upper mold 11 and the lower mold 12 are clamped and the mold 10 is opened, the lower mold 12 moves up and down (lifts and lowers). ing.

  Further, the upper mold 11 shown in FIG. 3 is provided with a suction port 11f that opens into the cavity 11a. As shown in FIG. 2, the upper film 8 is in close contact with the cavity 11a and the cull 11b during molding. Similarly, the upper film first suction part 11g that sucks the upper film 8 through the suction port 11f, and the upper film 8 through the suction port 11f so that the upper film 8 is in close contact with the periphery of the cavity 11a during molding. An upper film second suction part 11h that sucks the film 8 is provided.

  The suction port 11f provided in the cavity 11a and the cull 11b and the upper film first suction part 11g communicate with each other through the upper mold first exhaust passage 11i, and the suction port 11f provided on the periphery of the cavity 11a and the upper film first The two suction portions 11h communicate with each other through the upper mold second exhaust passage 11j.

  Further, the upper film first suction part 11g and the upper film second suction part 11h are separated from the cavity 11a, the cull 11b, and the periphery of the cavity 11a through the suction port 11f after the molding is finished, as shown in FIG. 10 (d). And the function of separating the upper film 8 from the upper mold 11.

  In the upper mold 11, as shown in FIG. 16, a total of 12 decompression suction passages 11 p are formed around the side surface of each cavity 11 a, and these decompression suction passages 11 p are decompressed. It communicates with the suction port 11k.

  The upper die 11 is also provided with a mechanism for evacuating and reducing the pressure inside the cavity 11a at the time of molding, thereby preventing the formation of the void 35 (see FIG. 21).

  That is, a vacuum suction port 11k communicating with the air vent 11e is formed, and when the resin is injected during molding, the vacuum suction part 11l evacuates the cavity 11a through the air vent 11e and the vacuum suction port 11k. Thus, the formation of the void 35 in the sealing portion 6 is prevented.

  The decompression suction port 11k and the decompression suction part 11l communicate with each other via the decompression exhaust passage 11m.

  On the other hand, the lower mold 12 shown in FIG. 4 is also provided with a suction port 12d that opens into the cavity 12a, so that the lower film 9 is in close contact with the cavity 12a during molding as shown in FIG. Similarly to the lower film first suction portion 12e that sucks the lower film 9 through the suction port 12d, and similarly, through the suction port 12d so that the lower film 9 is in close contact with the periphery of the cavity 12a during molding. A lower film second suction part 12f for sucking the lower film 9 is provided.

  The suction port 12d provided in the cavity 12a and the lower film first suction part 12e communicate with each other through the lower mold first exhaust passage 12g, and the suction port 12d provided around the cavity 12a and the lower film second The suction part 12f communicates with the lower mold second exhaust passage 12h.

Further, as shown in FIG. 4, the lower mold 12 of the mold 10 of the present embodiment is provided with a ring-shaped O-ring 34 (seal material) substantially along the outer periphery of the mold surface 12i. Yes.

  The O-ring 34 is formed of, for example, a silicone resin, and is disposed so as to slightly protrude from the mold surface 12i as shown in FIG. 2, whereby the upper mold 11 and the lower mold 12 are clamped. When this is performed, the mold surface 11n of the upper mold 11 and the O-ring 34 are brought into close contact with each other.

  Therefore, since the O-ring 34 is disposed on the lower mold 12, when the mold 10 is clamped, the areas formed by the upper mold 11 and the lower mold 12, that is, the cavities 11a and 12a and the cavities 11a and 12a communicate with the area. The resin filling portion 10a (see FIG. 9), which is a resin flow path such as the cull 11b and the runner 11c, can be sealed, and as a result, it is possible to prevent vacuum leakage when the cavities 11a and 12a are decompressed (during evacuation). it can.

  Further, as in the case of the upper mold 11, the lower mold first suction part 12e and the lower film second suction part 12f are provided to the cavity 12a and the cavity 12a from the suction port 12d after the molding. It also has a function of separating the lower film 9 from the lower mold 12 by discharging the peeling air 39 to the surroundings.

  Further, the molding apparatus is provided with four static elimination sections for eliminating static electricity.

  That is, since the upper film 8 and the lower film 9 which are resin-based films are conveyed, static electricity is likely to be generated in the mold 10 or the chip assembly 7 and the static electricity must be removed. Are provided at four locations.

  First, before use, that is, before being transported onto the mold 10, there are provided an upper film static elimination unit 25 a and a lower film static elimination unit 25 b which are film static elimination units 25 that neutralize the upper film 8 and the lower film 9. Furthermore, as shown in FIG. 5, an upper die removing portion 26a and a lower die removing portion 26b, which are die removing portions 26 for removing electricity from the mold 10, are provided.

  In addition, as shown in FIG. 5, the upper mold | type static elimination part 26a and the lower mold | type static elimination part 26b are arrange | positioned at the front side of the molding apparatus.

  In addition, a product static elimination unit 27 that neutralizes the molded chip assembly 7 to be a product before it is accommodated in the frame accommodating part 14 is disposed between the gate break part 18 and the frame accommodating part 14. .

  Furthermore, the used upper film static elimination part 41a and the used lower film static elimination part 41b which neutralize the used (molded) upper film 8 and the lower film 9 used by the mold are each a film winding part. Are provided in the vicinity of the upper film winding roller 20 and the lower film winding roller 22, and neutralization is performed when each film is wound.

  In addition, since the static electricity of a very high electric potential generate | occur | produces in the said film winding part, the used upper film static elimination part 41a and the used lower film static elimination part 41b are very effective in removing this static electricity. .

  Here, the static elimination method performed in the semiconductor device manufacturing method of the present embodiment will be described. The static elimination method is ion blow as shown in FIG. 8, and each static elimination unit (upper film static elimination unit 25 a, The lower film charge removal unit 25b, the upper mold charge removal unit 26a, the lower mold charge removal unit 26b, the product charge removal unit 27, the used upper film charge removal unit 41a, and the used lower film charge removal unit 41b) are supplied with ion blowing gas. The nozzle 28 to discharge and the electrode 32 for static elimination to which a high voltage is applied are installed.

  That is, as shown in FIG. 8A, a high voltage is applied to the static elimination electrode 32, and the gas is ionized through the gas discharged from the nozzle 28 between the static elimination electrodes 32 in this state. The ionized gas (positive ions in FIG. 8) is described using a target (upper film 8 in FIG. 8), but the lower film 9, the mold 10 and the chip assembly 7, and further the mold The same applies to the upper film 8 and the lower film 9). The negative charge 33 charged on the upper film 8 is sprayed on the negative film 33, thereby neutralizing the negative charge 33 (static electricity) as shown in FIG. However, the sign of the charge 33 may be opposite.

  As a result, generation of static electricity is prevented.

  In this embodiment, the case where dry air 31 is used as the gas for ion blowing will be described. However, by using dry air 31, supply of dry air 31 is different from the case of inert gas or the like. Since the unit can be a simple unit, each of the static eliminators provided with the supply unit of the dry air 31 can have a relatively simple structure.

  As a result, it is possible to reduce the cost of the molding apparatus having a charge eliminating function.

  Also, the upper film 8 and the lower film 9 used in the molding step of the method for manufacturing a semiconductor device of the present embodiment have fine irregularities formed on both front and back surfaces (the fine irregularities of both films are molded gold Although it is only necessary to be formed on at least one surface in contact with the mold resin 29 in the mold 10, it is preferable that the surface is formed on both the front and back surfaces. To do).

  The minute unevenness is such that when the sealing portion 6 is formed by molding, the concave portion of the concave portion or the convex amount of the convex portion is provided with ink such as letters and symbols on the surface of the sealing portion 6. It is formed as unevenness to the extent possible, and is formed by satin processing. The unevenness amount is, for example, 1 μm or more. However, in consideration of a satin processing technique in an actual film or the like, the maximum is 6 to 20 μm, preferably 10 to 15 μm, and optimally about 10 μm.

  Therefore, when the upper film 8 and the lower film 9 are arranged on the mold surfaces 11n and 12i of the upper mold 11 and the lower mold 12 of the mold 10, the fine unevenness of the mutual film is formed. (However, in this embodiment, since the fine irregularities are formed on both the front and back surfaces of both films, any surface in the upper film 8 and the lower film 9 is used.) May be arranged facing each other), and molding is performed in this state.

  Further, the upper film 8 and the lower film 9 are arranged in a pair in the mold 10 with the upper mold 11 and the lower mold 12. In the mold 10 of the molding apparatus shown in FIG. Since the pot 12c and the plunger 12b are arranged in the center, as shown in FIG. 5, the lower film 9 is arranged in two rows on both sides of the mold surface 12i of the lower mold 12 avoiding the pot 12c. ing.

  That is, among the pair of films used in the molding apparatus shown in FIG. 1, as shown in FIG. 5, the upper film 8 is a single sheet having a width substantially the same as the mold surface 11n of the upper mold 11. On the other hand, the lower film 9 is two films having a larger width than the BGA substrate 2.

  In addition, as a material which forms the upper film 8 and the lower film 9, it is preferable to use, for example, methylpentene resin. By using this methylpentene resin, the upper film 8 and the lower film that have been used in the molding process are used. The side film 9 can be incinerated.

  As a result, the mold using the upper film 8 and the lower film 9 can be molded without adversely affecting the environment.

  Next, the structure of the BGA 30 which is an example of the semiconductor device assembled by the semiconductor device manufacturing method of the present embodiment will be described with reference to FIGS.

  The BGA 30 is a low-cost type assembled by resin sealing (molding) using the molding apparatus shown in FIG.

  The BGA 30 has a structure in which a semiconductor integrated circuit is formed on the main surface 1a and a pad 1b made of aluminum or the like is provided, the semiconductor chip 1 is supported, and the pad 1b of the semiconductor chip 1 is supported. A BGA substrate 2 having a substrate electrode 2a disposed and provided, a plurality of bump electrodes 5 attached to the back surface 2c of the BGA substrate 2 as external terminals of the BGA 30, a pad 1b of the semiconductor chip 1 and a corresponding one It comprises a bonding wire 4 such as a gold wire for electrically connecting the substrate electrode 2a, and a sealing portion 6 formed by molding the semiconductor chip 1 and the bonding wire 4 with a molding apparatus shown in FIG.

  Here, since the sealing portion 6 of the BGA 30 is formed by being molded by the molding apparatus shown in FIG. 1, the sealing is performed by the matte processing of the upper film 8 and the lower film 9 arranged in the mold 10. The surface of the stop part 6 is formed into a rough surface.

  Accordingly, after the assembly of the BGA 30 is completed, it is possible to apply ink even when marking by printing when adding a symbol or character such as a product number to the sealing portion 6. Letters can be easily attached.

  The BGA substrate 2 has, for example, a three-layer wiring structure.

  Further, as shown in FIG. 7, the plurality of bump electrodes 5 are arranged in a lattice pattern around the back surface 2c of the BGA substrate 2 except for the chip area near the center, and are formed by solder, for example. It is.

  The semiconductor chip 1 is mounted on the BGA substrate 2 with a paste material or the like.

  Further, the mold resin 29 forming the sealing portion 6 is, for example, an epoxy-based thermosetting resin.

  Since the lower film 9 is brought into close contact with the back surface 2c of the BGA substrate 2 during molding, the molding resin 29 can be prevented from adhering to the back surface 2c of the BGA substrate 2.

  Thereby, it can prevent that the film | membrane of the thin mold resin 29 is formed in the back surface 2c of the BGA board | substrate 2, As a result, BGA30 in which bump connection with high reliability can be implement | achieved.

  Further, since it is possible to prevent the thin film of the mold resin 29 from being formed on the back surface 2c of the BGA substrate 2, the process of removing the thin film of the mold resin 29 after molding can be omitted.

  As a result, bump formation or transfer to the BGA substrate 2 can be performed smoothly.

  Further, in the BGA 30, since the molding resin 29 is placed around the BGA substrate 2 side of the substrate support lead 3a and the side peripheral portion of the BGA substrate 2 is molded at the time of molding, only the front side of the substrate support lead 3a is molded. In addition, the sealing portion 6 is also formed in the peripheral portion of the side surface of the BGA substrate 2 on the BGA substrate 2 side, that is, the lower BGA substrate 2 of the substrate support lead 3a.

  As a result, the contact area between the sealing portion 6 and the BGA substrate 2 increases, so that the bonding force between the two can be improved, and when the size of the cavity 12a of the lower mold 12 is used as a reference, the size of the BGA substrate 2 is reduced. As a result, the cost of the BGA 30 can be reduced.

  The substrate support lead 3a is formed on a thin frame member 3 made of, for example, copper.

  Here, the mold 10 in the molding apparatus shown in FIG. 1 uses one frame member 3 with four BGAs, and molds two frame members 3 simultaneously.

  Therefore, in the molding apparatus, eight sealing portions 6 of the BGA 30 can be formed by one molding operation.

  That is, a plurality of frame members 3 on which a plurality of semiconductor chips 1 can be mounted are used for obtaining a plurality of pieces, and the substrate support leads 3a are cut into individual BGAs 30 after the molding. This is a member remaining on the BGA 30 side.

  Thereby, one frame member 3 is a thin plate-like structure composed of substrate support leads 3a capable of supporting the four BGA substrates 2 and frame portions 3b (see FIG. 15) for supporting the substrate support leads 3a. It is a member.

  Next, a method for manufacturing the semiconductor device of the present embodiment will be described with reference to a manufacturing process flowchart shown in FIG.

  The manufacturing method of the semiconductor device is a manufacturing method of the BGA 30 shown in FIGS.

  First, a semiconductor chip 1 having a semiconductor integrated circuit formed on the main surface 1a is prepared.

  On the other hand, a frame member 3 shown in FIG. 11 to which a BGA substrate 2 as a wiring substrate on which the semiconductor chip 1 can be mounted is attached is prepared.

  Here, the frame member 3 is, for example, a thin plate member made of copper or the like, and four BGA substrates 2 are arranged in a row in each BGA region so that four BGAs 30 can be manufactured from one frame member 3. Are attached at approximately equal intervals.

  Subsequently, after the frame member supply in step S1 and the semiconductor chip supply in step S2 shown in FIG. 18 are performed, chip mounting (also referred to as die bonding) for bonding the semiconductor chip 1 and the BGA substrate 2 is performed (step S3). .

  That is, the semiconductor chip 1 is mounted (fixed) on the chip support surface 2b of each BGA substrate 2 via the paste material.

  Thereafter, the pads 1b, which are a plurality of terminals of the semiconductor chip 1, and the plurality of substrate electrodes 2a of the BGA substrate 2 corresponding thereto are electrically connected by wire bonding (step S4).

  As a result, the plurality of pads 1 b of the semiconductor chip 1 and the plurality of substrate electrodes 2 a of the BGA substrate 2 corresponding to each of the pads 1 b are electrically connected by the bonding wires 4.

  The frame member 3 that has been subjected to chip mounting and wire bonding becomes a chip assembly 7 (see FIG. 10B).

  Thereafter, a molding process is performed. First, the chip assembly 7 to be molded is carried into the loader unit 13 of the molding apparatus shown in FIG.

  Subsequently, the chip assembly 7 is set from the loader unit 13 to the frame alignment unit 16, and the chip assembly 7 is positioned and aligned in the frame alignment unit 16.

  Further, a cylindrical tablet is set on the frame carrier 15, and a desired chip assembly 7 is sucked and supported from the frame alignment unit 16 by the frame carrier 15.

  Subsequently, the pot 12c (see FIG. 2) in the mold 10 of the molding apparatus is cleaned by the pot cleaner 24 shown in FIG.

  After that, the upper film 8 having fine irregularities formed on both the front and back surfaces, that is, the upper film 8 having a textured surface on both the front and back surfaces is set on the upper film supply roller 19, and the leading end side of the upper film 8 is set to the upper mold 11 and the lower mold 12, the upper film winding roller 20 is set so as to be rewound.

  Similarly, the lower film 9 in which fine irregularities are formed on both the front and back surfaces, that is, the lower film 9 having both the front and back surfaces processed with a matte finish is set on the lower film supply roller 21, and the lower side is the same as in the case of the upper film 8. The leading end side of the film 9 is set between the upper mold 11 and the lower mold 12 so as to face the upper film 8 so as to be wound on the lower film winding roller 22.

  Thereby, the upper film 8 and the lower film 9, which are a pair of films, are disposed between the upper mold 11 and the lower mold 12.

  Here, in the molding die 10 of the molding apparatus shown in FIG. 1, since the pot 12c and the plunger 12b are arranged at substantially the center of the lower die 12, as shown in FIG. They are arranged in two rows on both sides of the mold surface 12i of the mold 12 so as to avoid the pot 12c.

  That is, the upper film 8 is a single sheet having a width substantially the same as the mold surface 11 n of the upper mold 11, while the lower film 9 is two sheets having a larger width than the BGA substrate 2. It is.

  Further, as shown in FIG. 4, the lower mold 12 of the mold 10 has a ring-shaped O-ring 34 substantially extending along the outer periphery of the mold surface 12i so as to slightly protrude from the mold surface 12i. Has been placed.

  Thereafter, film neutralization is performed in step S5.

  Here, in the film static elimination unit 25 shown in FIG. 1, as shown in FIG. 8A, the dry air 31 passes through the dry air 31 between the static elimination electrodes 32 to which a high voltage, for example, a high voltage of 10 kV is applied. Is ionized.

  Further, in the film static elimination unit 25, the charge 33 charged by supplying the ionized dry air 31 to the pair of films, that is, the upper film 8 and the lower film 9 to be charged on the upper film 8 and the lower film 9 is shown in FIG. Neutralize as shown in b).

  FIG. 8 is a diagram for explaining the static elimination (ion blow) of only the upper film 8 of the pair of films, but the same applies to the lower film 9.

  Thereby, the unused upper film 8 and the lower film 9 before molding can be ion blown, and as a result, generation of static electricity in the upper film 8 and the lower film 9 can be prevented.

  Thereafter, as shown in FIG. 10A, a predetermined amount of each film is taken up by the upper film take-up roller 20 and the lower film take-up roller 22, whereby the upper mold 11 of the mold 10 shown in FIG. Film feeding (step S6) is performed in which the charge neutralized, that is, ion blown, upper film 8 and lower film 9 are placed on the mold surface 11n and the mold surface 12i of the lower mold 12.

  Subsequently, the upper film 8 and the lower film 9 are preheated on the mold 10 and appropriate tension is applied to both films, whereby the wrinkles of the upper film 8 and the lower film 9 are extended.

  Then, the mold charge removal by step S7 is performed.

  Here, as shown in FIG. 8A, a high voltage, for example, a high voltage of 10 kV, is applied to the mold static elimination unit 26 including the upper die elimination unit 26a and the lower die elimination unit 26b shown in FIG. The dry air 31 is ionized through the dry air 31 between the static elimination electrodes 32.

  Furthermore, as shown in FIG. 5, in the mold charge eliminating unit 26, ionized dry air 31 is supplied to the mold surfaces 11 n and 12 i of the upper mold 11 and the lower mold 12, so that the respective mold surface areas are supplied. The charge 33 (see FIG. 8B) to be charged is neutralized.

  As a result, the mold 10 after molding can be ion blown. As a result, when performing the molding of the next shot, the mold can be performed in a state where static electricity is not generated in the mold 10.

  Therefore, adverse effects such as electrostatic breakdown on the BGA 30 due to static electricity on the mold 10 can be prevented.

  Next, film suction is performed in step S8.

  Here, the upper film 8 is sucked from the upper film first suction portion 11g shown in FIG. 3 through the upper mold first exhaust passage 11i and the suction port 11f, and is aligned along the inner surface of the cavity 11a of the upper mold 11. 8 is brought into close contact with the inner surface of the cavity 11a.

  Similarly, the lower film 9 is sucked from the lower film first suction portion 12e shown in FIG. 4 through the lower mold first exhaust passage 12g and the suction port 12d so as to be along the inner surface of the cavity 12a of the lower mold 12. The lower film 9 is adhered to the inner surface of the cavity 12a.

  Subsequently, in the method of manufacturing a semiconductor device according to the present embodiment, the mold die 10 shown in step S9 is empty-clamped in the film suction state.

  That is, the cavity 11a shown in FIG. 9 is formed by the upper mold 11 and the lower mold 12 by the O-ring 34 disposed on the mold surface 12i by performing an empty clamp that is a mold clamping that closes the upper mold 11 and the lower mold 12. The resin filling portion 10a which is a resin flow path such as 12a, the cal 11b communicating with this, and the runner 11c is sealed, and the upper film 8 and the lower film 9 are sucked in this sealed state.

  Thereby, as shown in FIG. 9, the upper film 8 and the lower film 9 are copied along the inner surface of the cavity 11a of the upper die 11 and the inner surface of the cavity 12a of the lower die 12, respectively.

  At that time, since the empty clamp is performed by the pressing force of the mold 10, the O-ring 34 protruding from the mold surface 12 i in the lower mold 12 is crushed as shown in FIG. 9, thereby causing the O-ring 34 to protrude. It is possible to prevent a gap from being formed between the O-ring 34 and the mold surface 12i. As a result, the upper film 8 and the lower film 9 can be reliably sucked.

  As a result, the upper film 8 and the lower film 9 follow the inner surface of the cavity 11a of the upper die 11 and the inner surface of the cavity 12a of the lower die 12, respectively, so that they are almost in close contact with each other.

  In this state, the mold opening which is the separation of the upper mold 11 and the lower mold 12 is performed.

  Subsequently, the frame carrier 15 that adsorbs and supports the chip assembly 7 is moved onto the mold 10, and the tablet is set in the pot 12c of the lower mold 12, and as shown in FIG. Two sets of chip assemblies 7 are arranged between an upper film 8 and a lower film 9, which are a pair of films arranged on 11a and 12a.

  The two sets of chip assemblies 7 are arranged on two sides of the pot 12c on the mold surface 12i of the lower mold 12 and arranged in two rows.

  Therefore, since four semiconductor chips 1 are mounted on the frame member 3 of one chip assembly 7, eight semiconductor chips 1 are molded in one molding operation in this mold 10. be able to.

  A state in which the chip assembly 7 is arranged on the lower mold 12 is shown in FIG.

  FIG. 17 shows the positional relationship among the substrate support lead 3a, the BGA substrate 2 and the cavity 12a on the lower die 12. Here, the semiconductor chip 1 and the bonding wire 4 fixed on the BGA substrate 2 are connected. While omitted, the cavity 12a is shown through the BGA substrate 2 and visible below.

  As shown in FIG. 17, the BGA substrate 2 supported by the substrate support lead 3 a of the frame member 3 in the chip assembly 7 is disposed on the cavity 12 a of the lower mold 12.

  Subsequently, the frame carrier 15 is returned to the standby position.

  Thereafter, it is confirmed that the frame carrier 15 has returned to the standby position, and then the lower mold 12 is lifted by pressing, so that the upper mold 11 and the lower mold 12 which are the pair of mold dies 10 are moved as shown in FIG. 9) and the cavities 11a and 12a shown in FIG. 9 formed by clamping (clamping) the upper die 11 and the lower die 12 by the O-ring 34 which is a sealing material, and the cal 11b communicating therewith. The resin filling portion 10a which is a resin flow path such as the runner 11c is sealed.

The clamp of the upper mold 11 and the lower mold 12 performed at this stage is, for example, a primary (initial) clamp having a surface pressure of about 1 to 5 kg / mm 2 as shown in FIG.

  Thereafter, molding is performed in the state of the primary clamp in step S10. Here, molten mold resin 29 (resin) is supplied between the upper film 8 and the lower film 9 as shown in FIG. 12A, and the cavity 11 a and the upper film are injected by the injection pressure of the mold resin 29. 8 until a gap 36 is formed between the cavity 12a and the lower film 9 (the space between the upper film 8 and the lower film 9 in the cavities 11a and 12a is almost filled with the mold resin 29). A first resin injection step of injecting the mold resin 29 into the cavities 11a and 12a is performed.

  That is, as shown in FIG. 12A, the resin is injected until the gaps 36 between the cavities 11a and 12a are formed only at the corners of the cavities 11a and 12a, respectively.

  At that time, as shown in FIG. 14A, the lower film 9 and the back surface 2c of the BGA substrate 2 of the chip assembly 7 are brought into close contact with each other so that the mold resin 29 does not enter, and as shown in FIG. A mold resin 29 is supplied between the film 8 and the lower film 9, and the cavities 11a and 12a are filled with the mold resin 29 so that the upper film 8 and the lower film 9 are along the inner surfaces of the cavities 11a and 12a, respectively.

  When injecting the mold resin 29, as shown in FIGS. 13A, 13B, and 13C, the mold resin 29 is sequentially injected from the gate 11d shown in FIG. As shown in FIG. 14 (b), the chip support surface of the BGA substrate 2 is formed by surrounding the mold resin 29 on both front and back sides of the substrate support lead 3a of the frame member 3 in the chip assembly 7 shown in FIG. 14 (a). As shown in FIG. 6B, the sealing portion 6 is formed on the 2b side and the side surface peripheral portion.

  At this time, as shown in FIG. 14B, after the mold resin 29 covers the bonding wires 4 of the chip assembly 7 in the cavities 11a and 12a, the cavities 11a and 12a are evacuated (evacuated) 37. Then, the mold resin 29 is filled into the cavities 11a and 12a so that the upper film 8 is along the inner surface of the cavity 11a and the lower film 9 is along the inner surface of the cavity 12a.

  That is, the cavities 11a and 12a are sufficiently filled with the mold resin 29, and evacuation (evacuation) 37 is performed immediately before the formation of the void 35 shown in the comparative example of FIG.

  Thereby, like the vacuuming 38 of the comparative example shown in FIGS. 22A and 22B, the upper film 8 is pulled by the reduced pressure and peeled off from the cavity 11 a, and as a result, the wire bending due to the dropping of the upper film 8 is performed. Can be prevented.

  Note that the vacuuming (evacuation) 37 shown in FIG. 14B is performed through the decompression suction port 11k, the air vent 11e, and the decompression exhaust passage 11m by the decompression suction part 11l of the upper mold 11 shown in FIG.

  Subsequently, while the cavities 11a and 12a are evacuated 37, that is, in a reduced pressure state, as shown in FIGS. 15 and 13 (d), (e) and (f), the mold resin is sequentially placed in the cavities 11a and 12a. 29 is filled.

Thereby, since the mold resin 29 can be filled while degassing the cavities 11a and 12a, generation of voids 35 as shown in the comparative example of FIG. 21 can be prevented.

  As a result, the moisture absorption resistance of the BGA 30 can be improved, and thereby the quality and reliability of the BGA 30 can be improved.

Further, as shown in FIG. 12 (a), in the injection process of the mold resin 29, the gap 36 between the cavity 11a and the upper film 8 and the gap 36 between the cavity 12a and the lower film 9 are respectively in the cavities 11a and 12a. After the resin injection (after the first resin injection step) until the surface is formed only at the corners (until the filling ratio of the mold resin 29 in the cavities 11a and 12a reaches about 90%), the surface pressure The upper die 11 and the lower die 12 are secondarily (mainly) clamped with a pressure (for example, a surface pressure of 10 kg / mm 2 or more) higher than the primary clamp of about 1 to 5 kg / mm 2 , and FIG. As shown, the upper film 8 and the lower film 9 are brought into close contact with the corners of the inner surfaces of the cavities 11a and 12a by the injection pressure of the mold resin 29 in this state. A mold resin 29 is filled along the cavities 11a and 12a.

  That is, in the state where the mold 10 is closed by the secondary clamp, the resin injection is performed until the upper film 8 and the lower film 9 are in close contact with the corners of the cavities 11a and 12a by the injection pressure of the mold resin 29. 2 Resin injection process is performed.

  As a result, as shown in FIG. 12C, the sealing portion 6 of the BGA 30 corresponding to the respective shapes of the cavities 11a and 12a can be formed in the chip assembly 7.

  Therefore, by performing the clamping state of the mold at the time of injection of the mold resin in two stages of the primary clamp and the secondary clamp, the cavity 11a, The upper film 8 and the lower film 9 can be finely moved so as to substantially conform to the shape of the inner surface of 12a, and as a result, the slack of the upper film 8 and the lower film 9 in the cavities 11a and 12a can be removed. it can.

  Thereby, it can mold, without reducing the quality of the external shape of the sealing part 6 of BGA30, As a result, the external appearance quality of the sealing part 6 of BGA30 can be improved.

  After the filling of the mold resin 29 is completed, the vacuum suction 37 (see FIG. 14B) in the cavities 11a and 12a by the reduced pressure suction part 11l shown in FIG.

  After completion of the molding, the lower mold 12 is lowered by pressing, the mold mold 10 is opened, and then the chip assembly 7 is released from the cavities 11a and 12a.

  At this time, in the present embodiment, after the mold opening, several seconds, preferably 2-3 seconds have elapsed, and after cooling the upper film 8 and the lower film 9, the chip assembly 7 is removed from the cavities 11a and 12a. Release.

  Here, first, the chip assembly 7 is peeled from the upper film 8 by lowering the lower mold 12, and at this point, a few seconds, preferably 2 to 3 seconds have elapsed, and then the chip assembly 7 is removed from the frame. The chip assembly 7 is peeled from the lower film 9 by being gripped by the frame chuck of the portion 17 and pulled upward.

  In addition, since the lower film 9 cools by pulling up the chip | tip assembly 7 upwards and peeling from the lower film 9 after 2-3 second passes, the cutting | disconnection of the lower film 9 can be prevented.

  Subsequently, the upper film first suction part 11g stops the suction to the upper mold 11 of the upper film 8, and then the suction film is switched to the discharge, and as shown in FIG. 10 (d), the upper film shown in FIG. The peeling air 39 is projected from the suction port 11 f by the first suction part 11 g, and the upper film 8 is peeled from the cavity 11 a of the upper mold 11.

  Similarly, suction to the lower mold 12 of the lower film 9 by the lower film first suction part 12e is stopped, and then switching from suction to discharge is performed by the lower film first suction part 12e shown in FIG. The peeling air 39 is projected from the suction port 12d, and the lower film 9 is peeled from the cavity 12a of the lower mold 12.

  Then, film winding is performed by step S11.

Here, the upper film take-up roller 20 and the lower film take-up roller 22 are rotated to take up portions used for molding the upper film 8 and the lower film 9.

  As a result, the upper film 8 and the lower film 9 are sequentially fed, and as a result, unused on the mold surface 11n of the upper mold 11 and the mold surface 12i of the lower mold 12 shown in FIG. An upper film 8 and a lower film 9 are respectively disposed.

  Further, when the film is wound, the used upper film removing unit 41a and the used lower film removing unit 41b are used to remove the used upper film 8 and the lower film 9, respectively. S12) is performed.

  In other words, the ionized dry air 31 is supplied to the portions of the upper film 8 and the lower film 9 used in the molds to neutralize the charges 33 (see FIG. 8A) charged on the respective films. To do.

  As a result, in the film winding portions such as the upper film winding roller 20 and the lower film winding roller 22, static electricity having a very high potential is generated. Therefore, the used upper film discharging portion 41a and the used lower film discharging portion are discharged. The static electricity on each film can be reliably removed by the ion blow of the part 41b.

  Thereafter, the product is taken out in step S13.

  Here, the molded chip assembly 7 is taken out by the frame take-out part 17, and the resin burr in the pot 12c is sucked by the pot cleaner part 24 shown in FIG.

  Subsequently, the molded chip assembly 7 taken out is cull-breaked by the gate break portion 18 shown in FIG. 1, whereby the residual resin adhering to the frame member 3 and the chip assembly 7 are separated.

  After the break is completed, the molded chip assembly 7 is transported to the frame storage unit 14 by the frame take-out unit 17, and the chip assembly 7 is sequentially stored in the frame storage unit 14.

  At that time, immediately before the chip assembly 7 is accommodated in the frame accommodating portion 14, the product charge removal shown in step S14 is performed.

  Here, in the product static elimination section 27 shown in FIG. 1, as shown in FIG. 8A, the dry air 31 is passed between the static elimination electrodes 32 to which a high voltage, for example, a high voltage of 10 kV is applied. Is ionized.

  Further, as shown in FIG. 1, the product charge eliminating unit 27 supplies the ionized dry air 31 to the chip assembly 7 to charge the charge 33 (see FIG. 8A) charged on the chip assembly 7. Neutralize.

  Thereby, the molded chip assembly 7 can be ion blown, and as a result, these can be sent to the next process in a state where static electricity is not generated in the chip assembly 7.

  Accordingly, adverse effects on the BGA 30 assembled in the next process can be prevented.

  After formation of the sealing portion 6 by molding, individual BGA regions including the BGA substrate 2 are cut and separated from the frame member 3 of the chip assembly 7.

  That is, the substrate support lead 3a is cut and separated from the frame portion 3b of the frame member 3 by mold cutting (step S15), thereby obtaining individual molded BGA substrates 2.

  After that, bump electrode formation (step S16) for forming a plurality of bump electrodes 5 as external terminals by solder transfer or solder printing is performed on the back surface 2c of the BGA substrate 2 and is attached by melting, thereby assembling the BGA 30. be able to.

  Subsequently, a predetermined inspection of the BGA 30 is performed, and the manufacture of the BGA 30 shown in FIGS. 6 and 7 is completed (step S17).

  According to the manufacturing method of the semiconductor device of the present embodiment, when the BGA 30 is molded, before the chip assembly 7 is placed in the cavity 12a, the mold die 10 is once closed and empty clamped, and this mold clamping is performed. The resin filling portion 10a, which is a resin flow path such as the cavities 11a and 12a shown in FIG. 9 and the cull 11b and runner 11c shown in FIG. The film 8 and the lower film 9 are sucked to place the films along the inner surfaces of the cavities 11a and 12a of the upper mold 11 and the lower mold 12, and then the mold is opened once to place the chip assembly 7 in the cavity 12a. After that, by performing mold clamping by performing mold clamping again, the upper fins are formed on the inner surfaces of the respective cavities 11a and 12a. Since the mold resin 29 can be filled in a state where the lower film 9 and the lower film 9 are aligned, the upper film 8 hangs down in the cavity 11a of the upper mold 11 or the lower film 9 in the cavity 12a of the lower mold 12 Lifting can be prevented.

  Thereby, since the upper film 8 does not sag on the upper mold 11 side, the upper film 8 can be prevented from coming into contact with the bonding wire 4 of the chip assembly 7, and therefore the bonding wire 4 is disconnected during molding. Can be prevented.

  As a result, the yield of the BGA 30 manufactured from the chip assembly 7 can be improved.

  Further, since the lower film 9 does not lift on the lower mold 12 side, the chip assembly 7 can be placed at an appropriate position in the cavity 12a and filled with the mold resin 29. Therefore, the BGA substrate 2 can be filled. Generation | occurrence | production of mold defects, such as locations other than the back surface 2c of (chip support substrate) being exposed from the sealing part 6, can be prevented.

  As a result, the yield of the BGA 30 manufactured from the chip assembly 7 can be improved as described above.

  In the BGA 30, when molding, the lower film 9 is brought into close contact with the back surface 2 c of the BGA substrate 2 of the chip assembly 7 to mold the back surface 2 c (surface to which the bump electrode 5 is attached) of the BGA substrate 2. Molding can be performed without attaching the resin 29.

  That is, since the mold resin 29 can be prevented from entering the back surface 2c from the side surface of the BGA substrate 2 at the time of molding, a thin mold resin 29 film can be prevented from being formed on the back surface 2c of the BGA substrate 2.

  As a result, a BGA capable of highly reliable bump connection can be realized.

  Furthermore, since it is possible to prevent the thin film of the mold resin 29 from being formed on the back surface 2c of the BGA substrate 2, the step of removing the thin film of the mold resin 29 after molding can be omitted.

  As a result, bump formation or transfer to the BGA substrate 2 can be performed smoothly.

  Since the sealing portion 6 can be formed also on the side surface of the BGA substrate 2 without attaching the mold resin 29 to the back surface 2 c of the BGA substrate 2, the sealing portion 6 and the BGA substrate 2 can be joined in the BGA 30. You can improve your power.

  Moreover, in BGA30, the surface of the sealing part 6 is formed in the rough surface by the satin finish processing of the upper film 8 and the lower film 9 arrange | positioned at the mold die 10. FIG.

  As a result, it is possible to apply ink even when marking is performed by printing when a symbol or character such as a product number is attached to the sealing portion 6 of the BGA substrate 2 after assembly is completed. Symbols and characters can be easily attached to

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments of the invention. However, the present invention is not limited to the embodiments of the invention, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.

  For example, in the above-described embodiment, the upper film 8 and the lower film 9 are placed on the inner surfaces of the cavities 11a and 12a by the film suction in the state of empty clamping before the chip assembly 7 is placed in the cavity 12a. Although the method of making (following) has been described, as another method of placing the upper film 8 and the lower film 9 along the respective cavities 11a and 12a before the chip assembly 7 is arranged, another implementation of FIG. As shown in the embodiment, in a state where the mold is opened before the chip assembly 7 (see FIG. 17) is arranged, the pressing blocks 42 corresponding to the shapes of the cavities 11a and 12a are used. The upper film 8 and the lower film are pressed on the inner surfaces of the cavities 11a and 12a by pressing against the inner surfaces of the cavities 11a and 12a, respectively. After was allowed along (were modeled after), remove the press block 42 from the cavity 11a, 12a, then, after the mold clamping by placing the tip assembly 7 between the two films may be molded.

  Moreover, in the molding process of the manufacturing method of BGA30 (semiconductor device) of the said embodiment, although the case where a cylindrical tablet was used was demonstrated, you may use a rod-shaped tablet as a modification of the said tablet, and in that case The shape of the resin runner 40 after molding is shown in FIG.

  That is, by using the bar-shaped tablet, as shown in FIGS. 20 (a) and 20 (b), the length of the resin runner portion 40 can be shortened and the interval between the adjacent sealing portions 6 can be shortened. As a result, the usage amount of the mold resin 29 can be reduced.

  Moreover, in the said embodiment, although the upper mold | type 11 was made into the 1st metal mold | die and the lower mold | type 12 was made into the 2nd metal mold | die, the relationship of both may be the opposite.

  That is, the upper mold 11 may be the second mold, and the lower mold 12 may be the first mold.

  Similarly, the upper film 8 may be the first film and the lower film 9 may be the second film.

  Moreover, although the said embodiment demonstrated the case where the 1st and 2nd film was used, the said film may use only any one.

  For example, only the first film is used, and the first film is disposed only in the mold surface area of the mold that forms the sealing portion of the semiconductor device, thereby performing molding.

  Moreover, in the said embodiment, although the lower mold | type 12 was made into the operation side in the mold die 10, not only this but the upper mold | type 11 is good also as an operation side.

  Furthermore, in the said embodiment, although BGA30 was taken up and demonstrated as an example of a semiconductor device, the said semiconductor device is not limited to BGA30, If it is a semiconductor device by which resin sealing (molding) is performed, For example, a CSP (Chip Scale Package) or a QFN (Quad Flat Non-leaded package) may be used.

  The present invention is suitable for semiconductor device manufacturing technology.

It is a composition schematic diagram showing an example of an embodiment of a structure of a mold device used with a manufacturing method of a semiconductor device of the present invention. It is sectional drawing which shows an example of the structure of the mold metal mold | die in the molding apparatus shown in FIG. It is a top view which shows the structure of the upper mold | type in the mold die shown in FIG. It is a top view which shows the structure of the lower mold | type in the mold die shown in FIG. It is a block diagram which shows arrangement | positioning of the die static elimination part in the molding apparatus shown in FIG. (A), (b) is a figure which shows the structure of BGA which is an example of the semiconductor device assembled using the manufacturing method of the semiconductor device of this invention, (a) is a top view, (b) is sectional drawing. is there. It is a bottom view which shows the structure of BGA shown in FIG. (A), (b) is a conceptual diagram which shows an example of the ion blow in the manufacturing method of the semiconductor device of this invention. It is an expanded partial sectional view which shows an example of the suction state of the film at the time of the empty clamp in the manufacturing method of the semiconductor device of this invention. (A), (b), (c), (d) is a metal mold | die operation | movement figure which shows an example of operation | movement of the mold metal mold | die in the manufacturing method of the semiconductor device of this invention. (A), (b) is a fragmentary sectional view which shows an example of the state of the primary clamp in the two-stage clamp of the mold die of the manufacturing method of the semiconductor device of this invention. (A), (b), (c) is a fragmentary sectional view which shows an example of the state of the secondary clamp in the two-stage clamp of the mold die of the manufacturing method of the semiconductor device of this invention. (A), (b), (c), (d), (e), (f) is a conceptual diagram which shows an example of the resin injection | pouring state to the cavity at the time of mold in the manufacturing method of the semiconductor device of this invention. . (A), (b) is an expanded fragmentary sectional view which shows an example of the pressure reduction state of the cavity at the time of mold in the manufacturing method of the semiconductor device of this invention, (a) is the state before pressure reduction, (b) is pressure reduction start. State. It is a fragmentary sectional view which shows an example of the resin injection | pouring state to the cavity at the time of mold in the manufacturing method of the semiconductor device of this invention. FIG. 3 is an enlarged partial plan view showing a structure of a suction passage for an upper mold cavity in the mold shown in FIG. 2. FIG. 2 is a partial plan view showing an example of a state in which a chip assembly is arranged on the lower mold in the molding apparatus shown in FIG. 1. It is a manufacturing process flowchart which shows an example of embodiment of the manufacturing process in the manufacturing method of the semiconductor device of this invention. It is an expanded partial sectional view which shows the film press state by the press block used with the manufacturing method of the semiconductor device of other embodiment of this invention. (A), (b) is a figure which shows an example of the structure of the resin runner part at the time of using the rod-shaped tablet which is a modification of the tablet used at the time of the molding of the manufacturing method of the semiconductor device of this invention, (a) Is a plan view, and (b) is a cross-sectional view. It is a mold conceptual diagram which shows the void formed by the mold of the comparative example with respect to the mold of the manufacturing method of the semiconductor device of this invention. (A), (b) is an expanded fragmentary sectional view which shows the state at the time of depressurization of the cavity of the comparative example with respect to the depressurization of the cavity at the time of molding of the manufacturing method of the semiconductor device of the present invention, (a) The previous state, (b) is the state after decompression.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor chip 1a Main surface 1b Pad 2 BGA board 2a Substrate electrode 2b Chip support surface 2c Back surface 3 Frame member 3a Substrate support lead 3b Frame part 4 Bonding wire 5 Bump electrode 6 Sealing part 7 Chip assembly 8 Upper film (2nd film) Film)
9 Lower film (first film)
DESCRIPTION OF SYMBOLS 10 Mold 10a Resin filling part 11 Upper mold (1st mold)
11a Cavity 11b Cal 11c Runner 11d Gate 11e Air vent 11f Suction port 11g Upper film first suction part 11h Upper film second suction part 11i Upper mold first exhaust passage 11j Upper mold second exhaust path 11k Decompression suction port 11l Decompression suction part 11m Depressurization exhaust passage 11n Mold surface 11p Decompression suction passage 12 Lower mold (second mold)
12a Cavity 12b Plunger 12c Pot 12d Suction port 12e Lower film first suction portion 12f Lower film second suction portion 12g Lower mold first exhaust passage 12h Lower mold second exhaust passage 12i Mold surface 13 Loader portion 14 Frame storage portion DESCRIPTION OF SYMBOLS 15 Frame conveyance body 16 Frame alignment part 17 Frame taking-out part 18 Gate break part 19 Upper film supply roller 20 Upper film winding roller 21 Lower film supply roller 22 Lower film winding roller 23 Guide roller 24 Pot cleaner part 25 Film static elimination Part 25a Upper film static elimination part 25b Lower film static elimination part 26 Mold static elimination part 26a Upper mold static elimination part 26b Lower mold static elimination part 27 Product static elimination part 28 Nozzle 29 Mold resin 30 BGA (semiconductor device)
31 Dry air 32 Electrostatic discharge 33 Electric charge 34 O-ring (seal material)
35 Void 36 Crevice 37, 38 Vacuuming 39 Peeling air 40 Resin runner 41a Used upper film static elimination part 41b Used lower film static elimination part 42 Pressing block

Claims (8)

  1. (A) Formed on a first mold surface and an upper mold having a cavity formed on the first mold surface, a second mold surface facing the first mold surface, and the second mold surface A step of preparing a mold die composed of the suction holes and a lower mold having a sealing material provided around the suction holes;
    (B) preparing a film;
    (C) preparing an assembly including a semiconductor chip;
    (D) disposing the film between the first mold surface and the second mold surface;
    (E) sucking the film through the suction hole and bringing the film into close contact with the second mold surface of the mold;
    (F) disposing the assembly on the second mold surface of the mold through the film;
    (G) a step of clamping the upper mold and the lower mold;
    (H) supplying a mold resin into the cavity and forming a sealing portion for sealing the semiconductor chip;
    (I) opening the upper mold and the lower mold;
    (J) releasing the assembly having the sealing portion formed from the mold;
    A method for manufacturing a semiconductor device, comprising:
  2. In the manufacturing method of the semiconductor device according to claim 1,
    After the step (e) and before the step (f),
    (E1) a step of clamping the upper mold and the lower mold;
    (E2) a step of further sucking the film through the suction holes;
    (E3) opening the upper mold and the lower mold;
    A method for manufacturing a semiconductor device, comprising:
  3. The method of manufacturing a semiconductor device according to claim 2.
    In the step (e), the sealing material protrudes from the second mold surface toward the first mold surface,
    In the step (e1) and the step (e2), the sealing material protruding from the second mold surface is crushed.
  4. In the manufacturing method of the semiconductor device according to claim 1,
    After the step (j), solder is formed on the back surface of the assembly by transfer or printing.
  5. In the manufacturing method of the semiconductor device according to claim 1,
    The method for manufacturing a semiconductor device, wherein the sealing material is formed of a silicone resin.
  6. In the manufacturing method of the semiconductor device according to claim 1,
    The method of manufacturing a semiconductor device, wherein the sealing material is provided in a ring shape along the outer periphery of the second mold surface.
  7. (A) a first mold surface, a suction hole formed in the first mold surface, a cavity formed in the first mold surface, and an upper mold having a sealing material provided around the cavity; Preparing a mold mold comprising a lower mold having a second mold surface facing the first mold surface;
    (B) preparing a film;
    (C) preparing an assembly including a semiconductor chip;
    (D) disposing the film between the first mold surface and the second mold surface;
    (E) sucking the film through the suction holes, and bringing the film into close contact with the first mold surface of the mold,
    (F) disposing the assembly in the cavity of the mold,
    (G) a step of clamping the upper mold and the lower mold;
    (H) supplying a mold resin into the cavity and forming a sealing portion for sealing the semiconductor chip;
    (I) opening the upper mold and the lower mold;
    (J) releasing the assembly having the sealing portion formed from the mold;
    A method for manufacturing a semiconductor device, comprising:
  8. The method of manufacturing a semiconductor device according to claim 7.
    The assembly includes a substrate, a semiconductor chip mounted on the substrate, and a plurality of wires that electrically connect a plurality of electrodes of the substrate and a plurality of pads of the semiconductor chip. A method of manufacturing a semiconductor device.
JP2007286926A 2007-11-05 2007-11-05 Manufacturing method of semiconductor device Expired - Fee Related JP4778494B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015120306A (en) * 2013-12-24 2015-07-02 アピックヤマダ株式会社 Resin molding method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07164473A (en) * 1993-12-15 1995-06-27 Sumitomo Bakelite Co Ltd Resin sealing method for semiconductor component, semiconductor sealing device and resin-sealed semiconductor component
JPH08197567A (en) * 1995-01-24 1996-08-06 Apic Yamada Kk Resin molding method and resin molding device
JPH08294919A (en) * 1995-04-26 1996-11-12 Hitachi Ltd Method and apparatus for molding
JPH09107061A (en) * 1995-05-02 1997-04-22 Texas Instr Inc <Ti> Dam barless lead frame for encapsulating molded device
JPH10323845A (en) * 1997-05-23 1998-12-08 Toshiba Silicone Co Ltd Manufacture of silicone rubber o-ring and siliucone rubber o-ring
JPH11317472A (en) * 1998-03-06 1999-11-16 Toshiba Corp Semiconductor device and manufacture thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07164473A (en) * 1993-12-15 1995-06-27 Sumitomo Bakelite Co Ltd Resin sealing method for semiconductor component, semiconductor sealing device and resin-sealed semiconductor component
JPH08197567A (en) * 1995-01-24 1996-08-06 Apic Yamada Kk Resin molding method and resin molding device
JPH08294919A (en) * 1995-04-26 1996-11-12 Hitachi Ltd Method and apparatus for molding
JPH09107061A (en) * 1995-05-02 1997-04-22 Texas Instr Inc <Ti> Dam barless lead frame for encapsulating molded device
JPH10323845A (en) * 1997-05-23 1998-12-08 Toshiba Silicone Co Ltd Manufacture of silicone rubber o-ring and siliucone rubber o-ring
JPH11317472A (en) * 1998-03-06 1999-11-16 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015120306A (en) * 2013-12-24 2015-07-02 アピックヤマダ株式会社 Resin molding method

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