JP2008103469A - Measuring method and inspecting device for semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To permit measuring the value of electric characteristics stably and correctly even when a temperature in a room in which an inspecting device is installed or an ambient temperature as well as a jig temperature in the device is changed. <P>SOLUTION: The measuring unit 13 with the semiconductor device 12 mounted thereon, a computer unit 14 and a temperature sensor 15 which is a temperature detecting means for detecting the ambient temperature in the vicinity of the measuring unit 13 are installed on the inspecting device 11 while the computer device 14 is provided with a driving means 16 for driving the semiconductor device 12 by supplying current thereto, a characteristics measuring means 17 for measuring the electric characteristics of the driven semiconductor device 12, an operating means or a correcting means 18 for effecting the correcting operation of the electric characteristics value measured by a preset operating method based on the temperature detected by the temperature sensor 15 and a judging means 19 for judging whether the electric characteristics value corrected by the correcting means 18 is good or faulty with respect to the judgement reference. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a measuring method for measuring characteristics of a semiconductor device, and an inspection apparatus for measuring the characteristics of a semiconductor device to determine whether the semiconductor device is good or bad.

  Some of the electrical characteristics of semiconductor devices are easily affected by the temperature at the time of measurement. When measuring these items, it is necessary to measure the semiconductor device in a thermostatic chamber or a temperature-controlled environment. Electrical property inspection in a high-temperature environment is usually performed at a temperature of about 80 ° C. or 100 ° C., and a measuring device is placed in a thermostat or a semiconductor on a heater plate that can be raised to a desired temperature. A method of mounting and measuring an apparatus is generally used.

  However, there is no need for electrical property inspection in a high temperature environment, and when conducting electrical property inspection at room temperature, these methods are not used, and the measurement environment is guaranteed by temperature control of the air conditioner controlled at room temperature. There are many cases. That is, an inspection device for measuring and inspecting a semiconductor device is placed in a room at room temperature and is managed by an air conditioner. In a clean room for assembling semiconductor devices, the temperature is generally controlled at 25 ° C. ± 3 ° C.

  Also, a semiconductor device inspection apparatus often includes a transport system, and the transport mechanism automatically transports the semiconductor device to a measuring unit of the inspection apparatus. As a result, when the operator puts a tray in which a large number of semiconductor devices are stored into the loading position of the transport system, the transport mechanism automatically transports the semiconductor devices one by one to the measuring unit of the inspection device. It has a function of determining whether it is acceptable or not, and classifying the non-defective product to the non-defective tray of the transport system and the defective product to the defective tray.

  A conventional inspection apparatus will be described with reference to the drawings.

  FIG. 10 is a schematic configuration diagram of a conventional semiconductor device inspection apparatus.

  The inspection device 31 includes a measurement unit 33 on which the semiconductor device 32 is placed and a computer device 34. The computer device 34 includes a driving unit 35 that supplies current to the semiconductor device 32 and drives it, a measuring unit 36 that measures the electrical characteristics of the driven semiconductor device 32, and a determination that is made by comparing the measurement result with a determination criterion. Means 37.

Further, the inspection apparatus 31 is provided with a transport system 38, and a loading tray cassette 39 in which a plurality of semiconductor devices 32 are stored, and the semiconductor device 32 is taken out from the loading tray cassette 39 and transported to the measuring unit 33. In addition, a transport mechanism 40 that transports the semiconductor device 32 that has been measured to a predetermined tray, and a non-defective product tray cassette 41 and a defective product tray cassette 42 in which the semiconductor devices 32 are classified and stored based on the determination result.
JP-A-4-250367

  However, in the inspection apparatus 31 of the semiconductor device shown in FIG. 10, when the electrical characteristic value is likely to change due to a change in temperature, the temperature in the inspection apparatus 31, particularly the measurement unit 33, is that of the semiconductor device itself. If the temperature changes due to self-heating or fluctuations in the surrounding environment, the measured electrical characteristic value may change, and the determination made by the determination means 19 may not be accurate. In addition, the transfer of the semiconductor device 32 automatically The need for the system 38 increases the cost of the overall inspection system.

  In addition, when the transport system 38 is abolished and the semiconductor device 32 is manually inserted into or removed from the measurement unit 33, the body temperature of the operator is conducted to the semiconductor device 32, and the electrical characteristic value However, it cannot be measured more accurately.

  FIG. 11 is a diagram showing the results of measuring the room temperature at which the inspection apparatus is installed, the ambient temperature inside the inspection apparatus, and the temperature of the jig on which the semiconductor device is mounted. After 2 seconds, the air conditioner changes to about 26 ± 2 ° C. under the temperature control of the air conditioner. The ambient temperature inside the inspection apparatus follows this room temperature.

  On the other hand, the jig temperature starts to rise in the same manner from the start of operation, but after about 1000 seconds, it is in a constant state although it is slightly interlocked with the ambient temperature around 27 ° C. This is presumably because the body temperature of the worker is conducted to the jig and becomes a constant temperature state between the ambient temperature. Whether the semiconductor device placed on this jig is easily affected by the temperature of the jig or the ambient temperature depends on the heat capacity of the semiconductor device and the measurement time, and the heat capacity of the semiconductor device. When the measurement time is small and the measurement time is short, it is easily affected by the ambient temperature, and when the heat capacity of the semiconductor device is large and the measurement time is long, the measurement is easily affected by the jig temperature.

  The present invention solves the above-described conventional problems, and provides a semiconductor device measuring method and inspection device capable of accurately determining a non-defective product or a defective product by correcting the measured electrical characteristic value according to a temperature change. For the purpose.

  In order to achieve the above object, a measurement method for a semiconductor device according to the present invention is a measurement method for measuring characteristics of a semiconductor device by placing the semiconductor device in an inspection apparatus. A correction calculation is performed based on the temperature of the vicinity of the apparatus.

  According to another aspect of the present invention, there is provided an inspection apparatus for measuring a characteristic of a semiconductor device. A non-defective semiconductor device measured by comparing the measured value measured by the characteristic measuring unit with a calculation unit that corrects the measured value based on a temperature detection result of the temperature detecting unit, and the correction value and a predetermined criterion. A judging means for judging whether the product is defective or defective.

  With the above configuration, the characteristic measurement value of the semiconductor device can be corrected based on the temperature of the vicinity of the device inside and outside the inspection device, and thus, the measurement was performed by comparing the correction value with a preset criterion. It is possible to accurately determine whether a semiconductor device is a good product or a defective product. For example, the measured electrical characteristic of the semiconductor device or the wavelength characteristic of the semiconductor laser device is corrected to an accurate value.

  According to the semiconductor device measuring method and the inspection device of the present invention, even if the electrical characteristic item is susceptible to temperature in the semiconductor device, the heat generated in the inspection device or the heat emitted from the semiconductor device itself or the surroundings It is possible to detect the temperature change of the jig due to the environment change of the operator and the body temperature of the worker and correct the measured electrical property value appropriately, so that stable measurement that is not affected by temperature can be performed it can.

  By correcting the measured electrical characteristic value according to the temperature change, an inspection apparatus that performs accurate non-defective / defective product determination of the semiconductor device is realized.

  DESCRIPTION OF EMBODIMENTS Embodiments of a semiconductor device inspection apparatus and a measurement method thereof according to the present invention will be described below with reference to the drawings.

  FIG. 1 is a schematic configuration diagram of a semiconductor device inspection apparatus according to a first embodiment of the present invention.

  In FIG. 1, an inspection apparatus 11 includes a measurement unit 13 on which a semiconductor device 12 is placed, a computer device 14, and a temperature sensor 15 that is a temperature detection unit that detects an ambient temperature in the vicinity of the measurement unit 13. Yes.

  Based on the temperature detected by the temperature sensor 15, the computer device 14 is preliminarily based on driving means 16 for supplying current to the semiconductor device 12 for driving, characteristic measuring means 17 for measuring electrical characteristics of the driven semiconductor device 12, and temperature detected by the temperature sensor 15. Correction means 18 that is a calculation means for correcting and calculating the electrical characteristic value measured by the set calculation method, and determination means for determining whether the electrical characteristic value corrected by the correction means 18 is non-defective or defective with respect to the determination criterion 19.

  In order to execute the correction calculation in the correction means 18, it is necessary to calculate in advance based on a reference semiconductor device whose electrical characteristic value is known with respect to the temperature fluctuation. It can be obtained by measuring the electrical properties of the device.

  FIG. 2 is a diagram showing a state in which the inspection apparatus 11 is placed in the thermostatic chamber 20. The electrical characteristics of the reference semiconductor device 21 are measured by measuring changes in electrical characteristics when the temperature in the thermostatic chamber 20 is changed. Get the value. The electrical characteristic value at this time is managed by the temperature in the thermostatic bath 20, and it can be considered that the semiconductor element mounted on the reference semiconductor device 21 is also managed in an equilibrium state at this temperature. That is, it can be considered to be a true value of an electric characteristic value with respect to a temperature change of the semiconductor element.

  FIGS. 3A to 3B are examples showing the true electrical characteristic measurement values of the reference semiconductor device 21 with respect to the temperature change of the thermostatic chamber 20.

  Next, a method for calculating the correction formula used by the correction means 18 using the reference semiconductor device 21 will be described with reference to FIG. As shown in FIG. 4, using the reference semiconductor device 21 in which the true electrical characteristic value has been measured with respect to the temperature fluctuation of the semiconductor device shown in FIG. c) and a provisional electrical characteristic value (d) are obtained and compared with a known value (b) to obtain a difference Δx (e).

FIG. 5 is an example of an approximate expression of a graph showing the relationship between the ambient temperature (c) and the difference Δx (e) and its curve, and the approximate expression (1) is
y = 0.964x ³ −7.4702x ² + 193.34x−1655.8 (1)
It is expressed.

That is, if the ambient temperature is t, the temporary electrical characteristic value is k, and the corrected electrical characteristic value is h,
h = k + 0.0964t ³ −7.4702t ² + 193.34t−1655.8 (2)
This is the correction formula (2).

  The determination unit 19 compares the corrected electrical characteristic value h with a determination criterion to determine whether the product is a non-defective product or a defective product.

  In the first embodiment, a transport system as in the conventional example is not shown, but it may be provided in the inspection apparatus 11.

  Next, a measurement method using the semiconductor device inspection apparatus according to the first embodiment will be described with reference to FIG. As shown in FIG. 1, the semiconductor device 12 is set in the measurement unit 13 of the inspection device 11, and the semiconductor device 12 is driven by the driving unit 16. Thereafter, the electrical characteristic is measured by the characteristic measuring means 17, and this is set as a temporary electrical characteristic value k1.

The measured temporary electrical characteristic value is corrected by the correction means 18. That is, by substituting the temporary electrical characteristic value k ₁ measured at a temperature t1 and property measurement unit 17 detected by the temperature sensor 15 in the correction equation (g), the electrical characteristic values h ₁ after the correction is calculated.

  Thus, by substituting the detected temperature and the temporary electrical characteristic value into the correction formula (g), the corrected electrical characteristic value can be obtained. The corrected electrical characteristic value is compared with the determination criterion to determine whether the measured semiconductor device is a good product or a defective product.

  The semiconductor device 12 is supplied to the characteristic measuring unit 13 by the operator or the transfer system 38 (see FIG. 10) described in the conventional example.

  Note that it is effective to measure a characteristic of a semiconductor device to be measured for a characteristic having a large temperature dependency among the characteristics.

  FIG. 6 is a schematic configuration diagram of a semiconductor device inspection apparatus according to the second embodiment of the present invention. The difference between the second embodiment and the first embodiment is that a temperature detection location is not an atmosphere but a structure close to the semiconductor device constituting the measurement unit 13, for example, the semiconductor device 12 is fixed and driven to generate heat. In other words, it is a plate that radiates heat generated or heat generated by driving the semiconductor device.

  That is, the temperature sensor 22 is embedded in the heat radiating plate 23 that fixes the semiconductor device 12 and radiates heat, and detects the temperature of the heat radiating plate 23.

  In the second embodiment, the correction method based on the detected temperature and the determination method based on the correction result are performed in the same manner as in the first embodiment. The reason for detecting the temperature of the heat radiating plate 23 is that it is closest to the semiconductor element mounted on the semiconductor device 12 and is considered to be closest to the temperature.

  FIG. 7 is a schematic configuration diagram of a semiconductor device inspection apparatus according to the third embodiment of the present invention. In the third embodiment, the inspection apparatus 11 includes a jig 24 for mounting and fixing the semiconductor device 12 and an inspection apparatus main body 25 for setting the jig 24 and measuring the electrical characteristics of the semiconductor device 12. Has been.

  Further, the inspection device 25 includes a computer device 14, a measurement stage 26 on which a jig 24 to which the semiconductor device 12 as a measurement object is fixed is placed in the measurement unit 13, and a temperature sensor that measures the temperature of the jig 24. 27.

  Similarly to the first and second embodiments, the computer device 14 includes a driving unit 16 that supplies current to the semiconductor device 12 and drives it, a characteristic measuring unit 17 that measures the electrical characteristics of the driven semiconductor device, And correction means 18 for correcting an electrical characteristic value measured by a preset calculation method based on the temperature detected by the temperature sensor 27.

  As the temperature sensor 27, a surface thermometer that measures the temperature of the jig 24 by a contact method or an infrared radiation thermometer that can measure the temperature without contact is used. In this embodiment, an infrared radiation thermometer is used.

  Usually, two or more jigs 24 for fixing the semiconductor device 12 are used for one inspection device 25.

  Next, a measurement method using the semiconductor device inspection apparatus according to the third embodiment will be described with reference to FIGS.

  First, as shown in FIG. 7, the semiconductor device 12 on which the semiconductor element is mounted is manually set on the jig 24 by using vacuum tweezers or the like.

  Next, as shown in FIG. 8, the jig 24 is placed and fixed on the measurement stage 26 of the inspection device 25, and the semiconductor device 12 is driven by the driving device 16. Thereafter, the electrical characteristic of the semiconductor device 12 is measured by the characteristic measuring means 17.

  The measured electrical characteristic value is corrected by the correction means in the same manner as in the first embodiment. The difference from the first embodiment is that the temperature sensor 27 does not measure the ambient temperature, but directly measures the temperature of the jig 24. The method for obtaining other correction equations and the correction results thereof The method of determining based on is the same as in the first embodiment.

  When the measurement of the electrical characteristics is completed, as shown in FIG. 9, the operator manually removes the jig 24 from the measurement stage 26 of the inspection device 25, removes the measured semiconductor device 12 from the jig 24, and displays pass / fail judgment display. After classification based on a vessel or the like (not shown), the semiconductor device 12 ′ to be measured next is attached to the jig 24.

  Thereafter, the jig 24 is again placed and fixed on the measurement stage 26 of the inspection apparatus 25, and the electrical characteristics are measured.

  As described above, the jig 24 on which the semiconductor devices 12 are sequentially placed is repeatedly attached to and detached from the measurement stage 26 of the inspection device 25, thereby proceeding with the electrical characteristic inspection.

  In the present embodiment, the case where there is one jig for one inspection device 25 has been described, but the present invention can also be applied to a configuration in which two or more jigs are used for one inspection device. In this case, the measured semiconductor device of the other jig can be removed and an unmeasured semiconductor device can be attached during measurement of electrical characteristics using one jig.

  That is, since the semiconductor device of the other jig can be exchanged during the electrical measurement with one jig, the setup work before the measurement can be performed efficiently.

  Next, the third embodiment will be described more specifically with reference to FIGS. 7 to 9 only when the semiconductor device is a semiconductor laser device. The basic configuration is the same as the configuration already described.

  In FIG. 7, an inspection apparatus 11 includes a jig 24 on which the semiconductor laser apparatus 12 is placed and fixed, and an inspection apparatus that sets the jig 24 and measures electrical characteristics such as wavelength characteristics of the semiconductor laser apparatus 12. 25 is separated.

  The inspection device 25 includes a computer device 14, a measurement stage 26 on which a jig 24 to which the semiconductor laser device 12 as a measurement object is fixed is placed in the measurement unit 13, and a temperature sensor 27 that measures the temperature of the jig 24. Have.

  Similarly to the first and second embodiments, the computer device 14 includes a driving unit 16 that supplies current to the semiconductor laser device 12 and drives it, and a measuring unit 17 that measures electrical characteristics of the driven semiconductor laser device. And a correction means 18 for correcting a wavelength characteristic value that is easily affected by the temperature among the electric characteristics measured by a preset calculation method based on the temperature detected by the temperature sensor 27.

  The temperature sensor 27 uses a surface thermometer that measures the temperature of the jig 24 by a contact method or an infrared radiation thermometer that can measure the temperature without contact. In this embodiment, an infrared radiation thermometer is used.

  Usually, two or more jigs 24 for fixing the semiconductor laser device 12 are used for one inspection device 25.

  Next, a measurement method using the semiconductor laser apparatus inspection apparatus according to the third embodiment will be described with reference to FIGS.

  First, as shown in FIG. 7, the semiconductor laser device 12 on which the semiconductor laser element is mounted is manually set on the jig 24 by using vacuum tweezers or the like.

  Next, as shown in FIG. 8, the jig 24 is placed and fixed on the measurement stage 26 of the inspection device 25, and the semiconductor laser device 12 is driven by the driving device 16. Thereafter, the electrical characteristics of the semiconductor laser device 12 are measured by the characteristic measuring means 17.

  Of the measured electrical characteristic values, the wavelength characteristic value is corrected by the correction means 18 in the same manner as in the first embodiment. The difference from the first embodiment is that the temperature sensor 27 does not measure the ambient temperature, but directly measures the temperature of the jig 24. In addition, based on the method for obtaining the correction formula and the correction result. The determination method is the same as in the first embodiment.

  After the measurement of the electrical characteristics including the wavelength characteristics is completed, as shown in FIG. 9, the operator manually takes out the jig 24 from the measurement stage 26 of the inspection device 25, and the measured semiconductor laser device 12 is attached to the jig 24. The semiconductor laser device 12 ′ to be measured next is attached to the jig 24 after being separated from the product and classified based on a pass / fail judgment indicator or the like (not shown).

  Thereafter, the jig 24 is again placed and fixed on the measurement stage 26 of the inspection apparatus body 25, and electrical characteristics such as wavelength characteristics are measured.

  As described above, the jig 24 on which the semiconductor devices 12 are sequentially placed is repeatedly attached to and detached from the measurement stage 26 of the inspection device 25, thereby proceeding with the electrical characteristic inspection.

  In the present embodiment, the case where there is one jig for one inspection device 25 has been described, but the present invention can also be applied to a configuration in which two or more jigs are used for one inspection device. In this case, the measured semiconductor laser device of the other jig can be removed and an unmeasured semiconductor laser device can be attached during the measurement of the electrical characteristics by one jig.

  That is, during the electrical measurement with one jig, the semiconductor laser device of the other jig can be replaced, so that the setup work before the measurement can be performed efficiently.

  As described above, in this embodiment, the temperature sensor is embedded in the structure of the measurement unit of the inspection apparatus, the temperature is detected in real time, the correction is performed based on the correction method set in advance according to the temperature, and the measurement of the semiconductor device is performed. The corrected electrical characteristic value can be corrected to an accurate value.

  In addition, since the jig for setting the inspection device main body and the semiconductor device is separated, the semiconductor device is inspected one after another by replacing the jig, and when there are two or more jigs, one of them is measured. The semiconductor device of the other jig can be replaced inside. Further, a radiation temperature sensor that detects the jig temperature in real time without contact is provided, and the temperature is corrected based on a preset correction method according to the temperature, and the measured electrical characteristic value can be corrected to an accurate value.

  Furthermore, by using an inspection system in which a jig is separated from the semiconductor device main body, the semiconductor device can be transported manually, and the cost of the inspection device can be greatly reduced.

  INDUSTRIAL APPLICABILITY The present invention is useful as a measurement method and an inspection device for measuring electrical characteristics of a semiconductor device, particularly electrical characteristics that are easily affected by temperature, and the electrical characteristics are measured in the final process of assembling the semiconductor device. It is applied to an inspection device that makes a determination.

1 is a schematic configuration diagram of a semiconductor device inspection apparatus according to a first embodiment of the present invention. Schematic configuration diagram of an inspection apparatus for obtaining a reference semiconductor device according to the first embodiment The figure which shows the change of the electrical property value accompanying the temperature change of the reference | standard semiconductor device of 1st Embodiment. 1 is a schematic configuration diagram of an inspection apparatus that measures a change in electrical characteristic value accompanying a temperature change of a reference semiconductor device according to a first embodiment. The figure which shows the temperature correction of the reference | standard semiconductor device of 1st Embodiment The schematic block diagram which shows the inspection apparatus of the semiconductor device which is the 2nd Embodiment of this invention The schematic block diagram which shows the inspection apparatus of the semiconductor device which is the 3rd Embodiment of this invention. The block diagram which shows the state which set the jig | tool to the inspection apparatus of the semiconductor device of 3rd Embodiment The block diagram which shows the state which removed the jig | tool from the test | inspection apparatus of the semiconductor device of 3rd Embodiment. Schematic configuration diagram of a conventional semiconductor device inspection apparatus The figure which shows the time-dependent change of jig temperature of inspection equipment, atmosphere temperature in inspection equipment, and room temperature

Explanation of symbols

11, 25, 31 Inspection device 12, 32 Semiconductor device 13, 33 Measuring unit 14, 34 Computer device 15, 22, 27 Temperature sensor 16, 35 Driving means 17, 36 Characteristic measuring means 18 Correction means 19, 37 Determination means 20 Constant temperature Tank 21 Reference semiconductor device 23 Heat radiation plate 24 Jig 26 Measurement stage 38 Transport system 39 Loading tray 40 Transport mechanism 41 Non-defective tray 42 Defective tray

Claims (16)

  In a measurement method for measuring characteristics of a semiconductor device by placing the semiconductor device in an inspection apparatus, a value obtained by measuring the characteristics of the semiconductor device is subjected to a correction calculation based on a temperature in a vicinity of the inspection apparatus. Measuring method of the device.   The method of measuring a conductor device according to claim 1, wherein the correction calculation is performed based on an ambient temperature in the inspection apparatus at the time of measurement.   The method of measuring a semiconductor device according to claim 1, wherein the correction calculation is performed based on a temperature of a constituent member in the inspection device in the vicinity of the semiconductor device.   2. The method of measuring a semiconductor device according to claim 1, wherein the correction operation is performed based on a temperature of the jig when the semiconductor device is sequentially measured by replacing a jig for setting and fixing the semiconductor device. .   The method for measuring a semiconductor device according to claim 4, wherein the temperature of the jig is detected in a non-contact manner.   6. The method of measuring a semiconductor device according to claim 4, wherein temperatures of at least two of the jigs are detected.   2. The method of measuring a semiconductor device according to claim 1, wherein the characteristic of the semiconductor device to be measured is a characteristic having a large temperature dependency among the characteristics of the semiconductor device.   8. The method of measuring a semiconductor device according to claim 7, wherein the semiconductor device is a semiconductor laser device, and wavelength characteristics of the semiconductor laser device are measured.   In an inspection apparatus that measures the characteristics of a semiconductor device, characteristic measurement means that measures the characteristics of the semiconductor device, temperature detection means that detects the temperature of the vicinity of the inspection apparatus, and measurement values measured by the characteristic measurement means Computation means for performing a correction operation based on a temperature detection result of the temperature detection means, and determination means for determining whether the semiconductor device measured by comparing the correction value with a preset determination criterion is a non-defective product or a defective product. An inspection apparatus for a semiconductor device.   The semiconductor device inspection apparatus according to claim 9, wherein the temperature detection means detects an ambient temperature in the inspection apparatus during measurement.   10. The semiconductor device inspection apparatus according to claim 9, wherein the temperature detecting means detects a temperature of a component in the inspection apparatus in the vicinity of the semiconductor device.   The semiconductor device according to claim 9, wherein the semiconductor device is sequentially measured by replacing a jig for setting and fixing the semiconductor device, and the temperature of the jig is detected by the temperature detecting means. Inspection equipment.   13. The semiconductor device inspection apparatus according to claim 12, wherein the temperature of the jig is detected in a non-contact manner by the temperature detecting means.   14. The semiconductor device inspection apparatus according to claim 12, wherein the number of the jigs is at least two.   The semiconductor device inspection apparatus according to claim 9, wherein the characteristic of the semiconductor device to be measured is a characteristic having a large temperature dependency among the characteristics of the semiconductor device.   16. The semiconductor device inspection apparatus according to claim 15, wherein the semiconductor device is a semiconductor laser device, and wavelength characteristics of the semiconductor laser device are measured.

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