JP2008103369A - Semiconductor device and its manufacturing process - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can assure heat dissipation properties even when a metal plate is made small with reduction of a wiring board or when a face-down structure is employed, and to provide its manufacturing process. <P>SOLUTION: The structure of a semiconductor device includes a wiring board B having a first conductor layer 4 and a second conductor layer 9 formed on the surface and the back of a substrate 3 and a conductive material 11 for connecting the first conductor layer 4 and the second conductor layer 9 provided in a through hole 10, a semiconductor element 1 connected with first conductor wiring 4a patterned on the first conductor layer 4 through a bump electrode 2 from side opposite to the substrate 3, and a metal plate 7 connected with the second conductor layer 9. Although a face-down structure is employed, heat from the semiconductor element 1 is transmitted through the first conductor layer 4 and the conductive material 11 to the second conductor layer 9 and dissipated therefrom, and further transmitted from the second conductor layer 9 to the metal plate 7 and dissipated therefrom. Since the heat is dissipated entirely from the second conductor layer 9 and the metal plate 7 on one side of the wiring board, high heat dissipation efficiency is attained. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device excellent in heat dissipation and a manufacturing method thereof.

  In recent years, as integrated circuits have been highly integrated and semiconductor chips have been reduced in size, a mounting technique that can cope with terminal connection at a fine pitch is required. As mounting technology that can meet this requirement, TAB (Tape Automated Bonding) used for TCP (Tape Carrier Package), COG (Chip On Glass) using anisotropic conductive film (ACF) or A mounting form such as COF (Chip On Film) is known.

  The basic structure of these mounting forms is that bump electrodes called bumps are formed on each electrode pad of a semiconductor chip using Au or solder, and bumps of the semiconductor chip are formed on metal wiring formed on a resin tape or a glass substrate. Are joined together. With the high integration of integrated circuits, high voltage and high current have come to be used.

  The configuration of this type of semiconductor device is shown in FIG. The semiconductor chip 1 has a protruding electrode 2 formed on one surface (hereinafter referred to as a main surface), and specifically, for a wiring board having an opening (device hole) similar in shape to the semiconductor chip 1. Is electrically connected to the first conductor wiring 4a patterned on the conductor layer 4 on the insulating film 3 having a device hole by the protruding electrode 2 from the insulating film 3 side. The connecting portion and the main surface of the semiconductor chip 1 are covered with a sealing resin 5.

  The other surface (hereinafter referred to as the back surface) of the semiconductor chip 1 is thermally connected to the metal plate 7 via the grease 6 (for example, FIG. 4 of Patent Document 1). As shown in the figure, there is a case where the conductor layer 4 to which the protruding electrode 2 of the ground terminal of the semiconductor chip 1 is connected is electrically connected to the metal plate 7 using a conduction screw 8.

  In such a semiconductor device, the heat generated when the semiconductor chip 1 is driven is transferred from the back surface of the semiconductor chip 1 to the metal plate 7 through the grease 6 and dissipated into the air, and at the same time, the conductor layer through the protruding electrode 2. 4 is dissipated in the air. On the other hand, since the ground terminal signal of the semiconductor chip 1 flows from the protruding electrode 2 to the metal plate 7 through the conductor layer 4 and the conduction screw 8, it is possible to sufficiently take the ground, thereby reducing noise. It becomes possible to take measures against EMI.

  On the other hand, there is a case where it is desired to connect the semiconductor chip 1 to the conductor wiring 4a from the side opposite to the insulating film 3 contrary to that shown in FIG. ). For example, when the width (lead width) of the conductor wiring 4a is reduced to reduce the terminal arrangement pitch, it is necessary to support the conductor wiring 4a instead of floating in the air as shown in the figure.

In conformity with this, a conductor layer is formed in an insulating film in which a through hole is formed without opening a device hole, and a semiconductor chip is connected face-down on the conductor wiring. A metal plate placed on the other side of the insulating film that has not been formed, or a conductor layer provided on both sides of the insulating film, and a metal plate placed on the conductor layer to which the semiconductor chip was connected (FIGS. 2 and 5 of Patent Document 1).
Japanese Patent Laid-Open No. 10-41428

  However, the conventional semiconductor device as shown in FIG. 6 has a problem that heat dissipation is reduced because the metal plate 7 is also made smaller at the same time when the wiring board is reduced in order to reduce the size of the device.

  Of the face-down semiconductor devices described above, the former connects the semiconductor layer to the metal plate through the through hole, but does not directly connect the semiconductor chip and the metal plate thermally. Instead, only the through hole portion conducts heat directly to the metal plate. In the latter, a semiconductor chip and a metal plate are arranged on one conductor layer connected by a through hole, so that the installation area of the metal plate is limited. Therefore, none of the semiconductor devices can obtain the desired heat dissipation.

  Even if the face-down structure for the wiring board shown in FIG. 6 is considered, the semiconductor chip 1 and the metal plate 7 cannot be directly thermally connected, and the heat conduction directly to the metal plate 7 is not possible. There are only 8 conductive screws. The same applies when a through hole is provided in the insulating film 3. For this reason, as described above, the current situation is that the back surface of the semiconductor chip 1 is connected to the metal plate 7 via the grease 6.

  SUMMARY OF THE INVENTION The present invention solves the above problems, and an object of the present invention is to provide a semiconductor device that can ensure heat dissipation and a method of manufacturing the same, both in the case of reducing the size of a metal plate as the wiring board is reduced and in the case of a face-down structure. And

  In order to solve the above-described problems, a semiconductor device of the present invention includes a first conductor layer and a second conductor layer formed on the front and back surfaces of a substrate, and the first conductor layer and the second conductor layer. A semiconductor in which a conductive material to be connected is provided in a through hole, and a semiconductor connected to a first conductor wiring patterned on the first conductor layer via a protruding electrode from the side opposite to the substrate It has an element and the metal plate connected to said 2nd conductor layer, It is characterized by the above-mentioned.

  This semiconductor device has a structure in which a semiconductor element is connected face-down to a first conductor layer via a protruding electrode. The heat of the semiconductor element is transmitted through a first conductor layer and a through hole to the second conductor layer. It is transmitted to the conductor layer and is radiated from the second conductor layer, and is also transmitted from the second conductor layer to the metal plate and radiated from there. Since heat is radiated from the entire second conductive layer and metal plate on one side of the wiring board, the heat dissipation efficiency is high.

  The ground terminal of the semiconductor element and the second conductor layer are electrically connected. According to this, the ground terminal of the semiconductor element is electrically connected to the metal plate via the second conductor layer, and noise can be reduced and EMI countermeasures can be taken.

  The wiring board may have an opening in the mounting region of the semiconductor element, and the metal plate may have a protrusion disposed in the opening. According to this, the protrusion part of a highly heat conductive metal plate will be arrange | positioned in the vicinity of a semiconductor element, and thermal conductivity and heat dissipation will improve. Therefore, heat dissipation can be ensured even when the metal plate is made smaller as the wiring board is reduced.

  The method for manufacturing a semiconductor device of the present invention has the first and second conductor layers on the front and back surfaces of the substrate, and the wiring substrate having a conductive material in the through hole for connecting both conductor layers. A step of aligning a semiconductor element having a protruding electrode connected to the first conductor wiring patterned on the first conductor layer from a side opposite to the substrate; the first conductor wiring and the protruding electrode; A step of thermocompression bonding or ultrasonic bonding, a step of disposing a conductive heat conductive material on the second conductor layer, and a metal plate connected to the second conductor layer via the conductive heat conductive material And a process. Naturally, alignment may be performed relatively.

  According to the present invention, using the wiring board in which the first and second conductor layers on the front and back sides are connected by the conductive material in the through hole, the semiconductor element is connected to the first conductor layer, and the second conductor layer is connected to the second conductor layer. By connecting the metal plates, it is possible to ensure higher heat dissipation than the conventional face-down structure.

Further, since the ground terminal of the semiconductor element is electrically connected to the second conductor wiring connected to the metal plate, noise can be reduced and EMI countermeasures can be taken.
In addition, by using a metal plate having a protrusion, the protrusion approaches the semiconductor element, the heat conduction distance is shortened, the thermal resistance can be reduced, and the area of the metal plate is reduced as the wiring board is reduced. Even if it is unavoidable to reduce the size, it is possible to dissipate heat efficiently.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows a configuration of a semiconductor device according to the first embodiment of the present invention. The semiconductor chip (semiconductor element) 1 has a projecting electrode 2 formed on the main surface (circuit formation surface), and has an opening (device hole) similar to the semiconductor chip 1 through the projecting electrode 2. It is electrically connected to the wiring board B.

  Specifically, the wiring board B has a first conductor wiring 4a on a first conductor layer 4 formed by vapor deposition or the like on one surface of an insulating film 3 having an opening 3a larger than the semiconductor chip 1. A second conductor wiring (not shown) is formed in a pattern on the second conductor layer 9 formed by vapor deposition or the like on the other surface, and only the first conductor wiring 4a is opened. It extends into the portion 3a. The first conductor layer 4 and the second conductor layer 3 are electrically and thermally connected by a conductive material 11 filled in a through hole 10 penetrating the insulating film 3.

  The semiconductor chip 1 described above is electrically connected to the first conductor wiring 4 a of the wiring board B from the side opposite to the insulating film 3 by the protruding electrode 2. In other words, it is a face-down structure. The connecting portion between the first conductor wiring 4 a and the protruding electrode 2 and the main surface of the semiconductor chip 1 are covered with a sealing resin 5.

  A metal plate 7 is disposed on the second conductive layer 9 side of the insulating film 3. The metal plate 7 has a size that can cover the opening 3a. The metal plate 7 has a protrusion 7a at the center of one surface, and the protrusion 7a is directed toward the semiconductor chip 1, that is, the protrusion 7a. Is electrically and thermally connected to the portion near the opening 3a by the grease 6 on the second conductor layer 9 in a state in which is inserted into the opening 3a. The sealing resin 5 is filled up to the metal plate 7 as shown.

  The protruding electrode 2 is, for example, Au or Ni coated with Au. The insulating film 3 is mainly made of polyimide, for example, and the first conductor layer 4 and the second conductor layer 9 are both Cu, for example, coated with Sn or Au. The conductive material 11 is, for example, a conductive resin or a metal such as solder obtained by adding a conductive filler such as copper particles, silver particles, or nickel particles to an insulating resin such as an epoxy resin or a silicone resin. The sealing resin 5 is, for example, an epoxy resin.

  With the above configuration, the heat generated when the semiconductor chip 1 is driven is transmitted from the surface of the semiconductor chip 1 to the protrusion 7a through the sealing resin 5 and is radiated from the entire metal plate 7 into the air. Further, it is transmitted from the protruding electrode 2 of the semiconductor chip 1 to the second conductor layer 9 through the first conductor layer 4 and the conductive material 11, and is transmitted from the second conductor layer 9 to the metal plate 7 through the grease 6. At the same time as heat is radiated from the air 7 to the air, the second conductor layer 9 itself is also radiating heat so that it is radiated from the air to the air. Since heat is radiated from the entire second conductor layer 9 and the metal plate 7 on one side of the insulating film 3, the heat radiation efficiency is high.

  On the other hand, since some of the protruding electrodes 2 of the semiconductor chip 1 are formed on the ground terminal, the ground terminal signal of the semiconductor chip 1 is transmitted from the corresponding protruding electrode 2 to the first conductor layer 4 and conductive. It is transmitted to the second conductor layer 9 through the material 11 and then transmitted to the metal plate 7 through the grease 6 and can be sufficiently grounded, so that it is possible to reduce noise and take measures against EMI. .

  When mounting this semiconductor device, as shown in FIG. 2, the wiring board B is so formed that the first conductor layer 4 is bonded to a mounting board such as the glass panel board 12, and the glass panel board 12 is surrounded. To place. The semiconductor chip 1 has a surface (circuit forming surface) on which the protruding electrode 2 is formed in the same direction as the substrate surface, and is supported by the substrate surface on the back surface. The first conductor layer 4, the insulating film 3, the second conductor layer 4, and the metal plate 7 are arranged in this order. The metal plate 7 having a heat radiating role is arranged on the outermost periphery.

  In the case of a face-down structure in which the semiconductor chip 1 is connected to the first conductor layer 4 from the side opposite to the insulating film 3 as in this semiconductor device, the metal plate 7 is directly connected to the semiconductor chip 1. The above-described structure is necessary because it cannot be made. Heat exchange cannot be performed in an arrangement where the metal plate 7 is not exposed to the outside air. Since the conventional semiconductor device described above with reference to FIG. 6 does not have a face-down structure, the metal plate 7 directly connected to the back surface of the semiconductor chip 1 can be disposed on the outermost periphery.

The method for manufacturing the semiconductor device of the present invention will be described with reference to FIGS.
As shown in FIG. 3A, the semiconductor chip 1 having the protruding electrode 2 is disposed on the bonding stage 21. An insulating film 3 having a first conductor layer 4, a second conductor layer 9, and a conductive material 11 is disposed above the semiconductor chip 1, and the protruding electrode 2 and the first conductor wiring 4a are aligned. To do.

  Next, as shown in FIG. 3B, the bonding tool 22 is disposed on the semiconductor chip 1 so that the first conductor wiring 4a is sandwiched between the bonding tool 22 and the protruding electrode 2 and is necessary for bonding. Apply appropriate temperature heating, load application or ultrasonic vibration. As a result, Au on the surface of the protruding electrode 2 and Au or Sn on the surface of the first conductor wiring 4a are joined together by eutectic or intermetallic bonding. The bonding stage 21 and the bonding tool 22 are made of steel or ceramic material.

Next, as shown in FIG. 3C, the sealing resin 5 is dropped on the semiconductor chip 1 to cover the portion near the opening of the second conductor layer 9 as shown.
Next, as shown in FIG. 4 (a), grease 6 is applied on the second conductor layer 9 and around the sealing resin 5, and thereafter, as shown in FIGS. 4 (b) and 4 (c). Then, the metal plate 7 is placed on the sealing resin 5, the protrusion 7 a is embedded in the sealing resin 5, and the peripheral portion of the metal plate 7 is placed on the grease 6. In this state, heat treatment for curing the sealing resin 5 is applied.

  FIG. 5 shows the configuration of the semiconductor device according to the second embodiment of the present invention. The difference between the semiconductor device of the second embodiment and the semiconductor device of the first embodiment is that the opening 3a (see FIG. 1) is not formed in the insulating film 3, and the metal plate 7 is a flat plate. The entire surface is electrically and thermally connected to the second conductor layer 9 by the grease 6.

  Specifically, the plurality of first conductor wirings 4a of the first conductor layer 4 are in close contact with the insulating film 3 up to the die bond region of the semiconductor chip 1, that is, to the position where the protruding electrode 2 can be connected. It extends and has a gap between each other. The sealing resin 5 covers a connection portion between the first conductor wiring 4 a and the protruding electrode 2 and is filled between the main surface of the semiconductor chip 1 and the exposed portions of the first conductor wiring 4 a and the insulating film 3. ing. The second conductor layer 5 has a gap (or an opening) at a position corresponding to the gap between the first conductor wirings 4a, that is, at a position corresponding to the center of the semiconductor chip 1, and also in this gap. Grease 6 is filled.

  In the semiconductor device according to the second embodiment, heat generated when the semiconductor chip 1 is driven is transferred from the surface of the semiconductor chip 1 to the first conductor layer 4 via the sealing resin 5 and the protruding electrode of the semiconductor chip 1. 2 to the first conductor layer 4, and from there to the second conductor layer 9 through the conductive material 11 in the through hole 10. Then, it is transmitted from the second conductor layer 9 to the metal plate 7 through the grease 6 and radiated into the air. At the same time, the second conductor layer 9 itself has a heat radiating property, so that the heat is radiated from there into the air. The Compared to the semiconductor device of the first embodiment, high heat dissipation is realized without providing an opening in the insulating film 3.

  On the other hand, the ground terminal signal of the semiconductor chip 1 is transmitted from the protruding electrode 2 to the second conductor layer 9 through the first conductor layer 4 and the conductive material 11, and further flows to the metal plate 7 through the grease 6. Since the grounding can be sufficiently taken and the structure is covered with the conductor layer 9, it is possible to reduce noise and take measures against EMI.

  As described above, the semiconductor device according to the present invention can easily release the heat generated by the semiconductor chip to the outside, and the shielding performance is improved by the conductor layer covering the substrate. There is no need to use another shield plate or the like later.

  In addition, although demonstrated as what forms the 1st conductor layer 4 and the 2nd conductor layer 9 on both surfaces of the insulating film 3, it is not restricted to this, It replaces with the insulating film 3, and insulating substrates, such as a glass substrate May be used. Although the second conductor layer 9 and the metal plate 7 have been described as being electrically and thermally connected by the grease 6, a heat dissipation sheet having the same performance may be used.

  Since the semiconductor device according to the present invention is excellent in heat dissipation and shielding properties of a semiconductor chip (semiconductor element), it is useful as a device corresponding to high integration of an integrated circuit and downsizing of a semiconductor chip.

Sectional drawing which shows the structure of the semiconductor device in Embodiment 1 of this invention Sectional drawing which shows the state which mounted the semiconductor device of FIG. 1 on the glass panel board | substrate. Process sectional drawing explaining the first half process of manufacturing the semiconductor device of FIG. Process sectional drawing explaining the latter half process of manufacturing the semiconductor device of FIG. Sectional drawing which shows the structure of the semiconductor device in Embodiment 2 of this invention. Sectional drawing which shows the structure of the conventional semiconductor device

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Protruding electrode 3 Insulating film 4 (1st) conductor layer 5 Sealing resin 6 Grease 7 Metal plate
7a Protrusion 8 Conductive screw 9 Second conductor layer
10 Through hole
11 Conductive material
12 Glass panel substrate
21 Bonding stage
22 Bonding tool

Claims (4)

  A wiring board in which a first conductor layer and a second conductor layer are formed on the front and back surfaces of the board, and a conductive material for connecting the first conductor layer and the second conductor layer is provided in the through hole. A semiconductor element connected to the first conductor wiring patterned on the first conductor layer by a protruding electrode from the side opposite to the substrate, and a metal plate connected to the second conductor layer. A semiconductor device having the same.   The semiconductor device according to claim 1, wherein a ground terminal of the semiconductor element and the second conductor layer are electrically connected.   2. The semiconductor device according to claim 1, wherein the wiring board has an opening in a mounting region of the semiconductor element, and the metal plate has a protrusion disposed in the opening.   A pattern is formed on the first conductor layer with respect to the wiring board having the first and second conductor layers on the front and back surfaces of the substrate and having a conductive material connecting the two conductor layers in the through hole. A step of aligning a semiconductor element having a protruding electrode connected to the first conductor wiring from the side opposite to the substrate; and a step of thermocompression bonding or ultrasonic bonding of the first conductor wiring and the protruding electrode A method of manufacturing a semiconductor device, comprising: disposing a conductive heat conductive material on the second conductor layer; and connecting a metal plate to the second conductor layer via the conductive heat conductive material. .

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