JP2008098594A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent electric discharge from occurring on a substrate due to induction charging of the substrate which is caused by charging of a cup portion generated when pure water splashes. <P>SOLUTION: A substrate processing apparatus 1 has a cup portion 41 for receiving processing liquid which is supplied from a processing liquid supply portion 3 and splashes from a substrate 9, and the cup portion 41 is formed of an insulation material. Hydrophilic treatment is performed on an outer peripheral surface 411b of the cup portion 41, and water is held by the outer peripheral surface 411b of the cup portion 41 while the substrate 9 is processed. Thereby, the charged potential of the cup portion 41 generated when pure water splashes can be suppressed by the water held by the outer peripheral surface 411b, without greatly increasing the manufacturing cost of the substrate processing apparatus 1 by using a special conductive material for forming the cup portion. As a result, it is possible to prevent electric discharge from occurring on the substrate 9 due to induction charging of the substrate 9 when the processing liquid is supplied to the substrate 9. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a technique for processing a substrate by supplying a processing liquid to the substrate.

  Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various processes are performed on a substrate having an insulating film such as an oxide film using a substrate processing apparatus. For example, a process such as etching is performed on the surface of the substrate by supplying the processing liquid onto the substrate while rotating the substrate about a central axis perpendicular to the main surface. At this time, the processing liquid scattered from the rotating substrate is received by the cup portion surrounding the periphery of the substrate, and the processing liquid is prevented from scattering to the outside of the apparatus. Such a cup portion is usually formed of an insulating material such as a fluororesin or a vinyl chloride resin from the viewpoint of corrosion resistance to the treatment liquid.

Patent Document 1 discloses a technique for preventing the cup portion from being charged during the processing of the substrate by forming the cup portion from an antistatic plastic material in the substrate processing apparatus. Further, in Patent Documents 2 and 3, in the substrate processing apparatus, the inner peripheral surface of the cup portion or the outer peripheral surface of the inner cup portion when a plurality of cup portions are provided concentrically is subjected to a hydrophilic treatment. In addition, a technique is disclosed in which the processing liquid splashed from the substrate is prevented from re-adhering to the substrate by rebounding at the cup portion.
JP 11-283914 A JP 2004-356299 A JP 2006-147672 A

  By the way, in the substrate processing apparatus, processing using pure water as a processing liquid (for example, cleaning processing) is also performed. At this time, pure water having a high specific resistance scattered from the substrate causes frictional charging in the insulating cup portion, and the main body of the substrate is inductively charged by the electric field from the cup portion. In this state, when a conductive processing liquid is supplied onto the substrate, the insulating property of the insulating film is destroyed, and a discharge occurs between the processing liquid applied to the substrate and the main body of the substrate through the insulating film. Will occur. Although it is conceivable to form the entire cup portion with an antistatic plastic material as in Patent Document 1, such a special material is expensive, and the manufacturing cost of the substrate processing apparatus is greatly increased. .

  The present invention has been made in view of the above problems, and does not significantly increase the manufacturing cost of the substrate processing apparatus, and the substrate is induced on the substrate by inductive charging of the substrate due to charging of the cup portion that occurs when pure water is scattered. The purpose is to prevent discharge from occurring.

  The invention described in claim 1 is a substrate processing apparatus for processing a substrate by supplying a processing liquid to a substrate, and supplying a holding unit for holding the substrate and at least pure water as a processing liquid onto the substrate. A treatment liquid supply unit; and a main body formed of an insulating material or a semiconductive material, and having a peripheral wall portion that surrounds the periphery of the holding unit and receives the processing liquid scattered from the substrate, and the peripheral wall portion is disposed inside the main body And a cup portion having a portion having a specific resistance smaller than that of the material forming the.

  A second aspect of the present invention is the substrate processing apparatus according to the first aspect, wherein the portion having the low specific resistance is provided on the entire circumference of the peripheral wall portion.

  Invention of Claim 3 is a substrate processing apparatus of Claim 1, Comprising: The site | part with a small specific resistance is 3 or more element site | parts arrange | positioned at equal intervals in the circumferential direction of the said surrounding wall part. It is a set.

  A fourth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects, wherein the portion having a small specific resistance is a conductive resin or a conductive carbon.

  A fifth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects, wherein the portion having a small specific resistance is a liquid held inside the peripheral wall portion.

  A sixth aspect of the present invention is the substrate processing apparatus according to any one of the first to fifth aspects, wherein the substrate processing apparatus has the same structure as that of the cup part, and the processing is performed inside the cup part and more than the cup part. Another cup portion disposed at a position away from the liquid supply portion is further provided, and the cup portion and the other cup portion can be moved relative to the holding portion in the normal direction of the substrate. .

  The invention according to claim 7 is the substrate processing apparatus according to any one of claims 1 to 5, wherein the entire peripheral wall portion is formed of an insulating material or a semiconductive material, and the inner side of the cup portion and the And further comprising another cup portion disposed at a position farther from the processing liquid supply unit than the cup unit, wherein the cup unit and the other cup unit are in a normal direction of the substrate with respect to the holding unit. Relative movement is possible.

  The invention according to claim 8 is the substrate processing apparatus according to any one of claims 1 to 7, further comprising a grounding portion for electrically grounding the portion having the small specific resistance.

  The invention according to claim 9 is a substrate processing apparatus for processing the substrate by supplying a processing liquid to the substrate, and supplying a holding unit for holding the substrate and at least pure water as the processing liquid onto the substrate. The processing liquid supply unit and the main body are formed of an insulating material or a semiconductive material, receive the processing liquid scattered from the substrate surrounding the holding unit, and at least one of the inner peripheral surface and the outer peripheral surface is A cup portion including a surface of a member having a specific resistance smaller than that of the main body.

  A tenth aspect of the present invention is the substrate processing apparatus according to the ninth aspect, wherein the member having a small specific resistance is provided on the entire circumference of the cup portion.

  The invention according to claim 11 is the substrate processing apparatus according to claim 10, wherein the member having a small specific resistance is a conductive resin film.

  A twelfth aspect of the present invention is the substrate processing apparatus according to the ninth aspect, wherein the member having a small specific resistance is formed of three or more element members arranged at equal intervals in the circumferential direction of the cup portion. It is a set.

  A thirteenth aspect of the present invention is the substrate processing apparatus according to any one of the ninth to twelfth aspects, further comprising a grounding portion that electrically grounds the member having a small specific resistance.

  The invention described in claim 14 is a substrate processing apparatus for processing a substrate by supplying a processing liquid to the substrate, and supplying a holding unit for holding the substrate and at least pure water as a processing liquid onto the substrate. A processing liquid supply unit and an insulating material that are formed of an insulating material and receive the processing liquid that scatters from the substrate surrounding the holding unit, and hold liquid containing water on at least one of the inner peripheral surface and the outer peripheral surface And a grounding portion that substantially electrically grounds the liquid containing water in a state where the liquid containing water is held on the at least one surface.

  A fifteenth aspect of the present invention is the substrate processing apparatus according to the fourteenth aspect, wherein the at least one surface of the cup portion is subjected to a hydrophilic treatment.

  The invention according to claim 16 is the substrate processing apparatus according to claim 14, wherein the cup portion has a fiber material or a mesh member on the at least one surface.

  A seventeenth aspect of the present invention is the substrate processing apparatus according to any one of the fourteenth to sixteenth aspects, wherein the normal line of the substrate is directed in the vertical direction, and the cup portion is moved relative to the holding portion by an elevating mechanism. The at least one surface includes the outer peripheral surface, and when the pure water is discharged from the processing liquid supply unit, the lifting mechanism moves the upper end portion of the cup portion below the substrate. By arrange | positioning, the pure water which scatters from the said board | substrate is provided to the said outer peripheral surface.

  The invention according to claim 18 is the substrate processing apparatus according to any one of claims 9 to 17, wherein the at least one surface includes the inner peripheral surface.

  The invention according to claim 19 is the substrate processing apparatus according to any one of claims 9 to 17, wherein the at least one surface is only the outer peripheral surface, and the inner peripheral surface has water repellency.

  A twentieth aspect of the present invention is the substrate processing apparatus according to any one of the ninth to nineteenth aspects, wherein the substrate processing apparatus is formed of the same material as the cup portion, and is at least one of an inner peripheral surface and an outer peripheral surface. Is the same as the inner peripheral surface of the cup portion and the at least one surface of the outer peripheral surface, and is disposed inside the cup portion and at a position farther from the processing liquid supply portion than the cup portion. One cup part is further provided, and the cup part and the other cup part are movable relative to the holding part in the normal direction of the substrate.

  A twenty-first aspect of the present invention is the substrate processing apparatus according to any one of the ninth to nineteenth aspects, wherein the substrate is formed of a material similar to that of the cup portion, and an inner peripheral surface and an outer peripheral surface are surfaces of the material. And further comprising another cup portion disposed inside the cup portion and at a position farther from the processing liquid supply portion than the cup portion, wherein the cup portion and the other cup portion are the holding portion. Relative to the normal direction of the substrate.

  According to a twenty-second aspect of the present invention, there is provided a substrate processing apparatus for processing a substrate by supplying a processing liquid to the substrate, and supplying a holding unit for holding the substrate and at least pure water as the processing liquid onto the substrate. A treatment liquid supply section; and at least one cup section that is formed of an insulating material and receives the treatment liquid scattered from the substrate surrounding the holding section. The liquid containing water is hold | maintained in the outer peripheral surface of the outermost cup part located among the outermost.

  The invention described in claim 23 is the substrate processing apparatus according to claim 22, wherein the liquid containing water is held in the outer peripheral surface of the outermost cup portion. Is further provided with a grounding portion that substantially electrically grounds.

  The invention according to claim 24 is the substrate processing apparatus according to claim 22 or 23, wherein the outer peripheral surface of the outermost cup portion is subjected to a hydrophilic treatment.

  The invention according to claim 25 is the substrate processing apparatus according to claim 22 or 23, wherein the outermost cup portion has a fiber material or a mesh member on the outer peripheral surface.

  A twenty-sixth aspect of the present invention is the substrate processing apparatus according to any one of the twenty-second to twenty-fifth aspects, wherein the normal line of the substrate is directed vertically and the at least one cup portion is held by the lifting mechanism. When the pure water is discharged from the processing liquid supply unit, the elevating mechanism disposes the upper end of the at least one cup unit below the substrate. Pure water splashing from the substrate is applied to the outer peripheral surface.

  A twenty-seventh aspect of the invention is a substrate processing apparatus for processing a substrate by supplying a processing liquid to the substrate, and supplying a holding unit for holding the substrate and at least pure water as the processing liquid onto the substrate. A treatment liquid supply unit, each of which is formed of an insulating material or a semiconductive material, and at least one cup unit that surrounds the holding unit and receives the treatment liquid scattered from the substrate; and the at least one cup A cylindrical member that is provided close to the outer peripheral surface of the outermost cup portion located on the outermost side of the portion and has a smaller specific resistance than the outermost cup portion.

  The invention according to claim 28 is the substrate processing apparatus according to claim 27, wherein the cylindrical member is made of metal.

  The invention according to claim 29 is formed of an insulating material and a holding portion that holds the substrate, a processing liquid supply portion that supplies at least pure water onto the substrate as a processing liquid, and surrounds the holding portion. A substrate processing apparatus comprising: a cup unit that encloses and receives a processing liquid scattered from the substrate; and a substrate processing method for processing the substrate, wherein a) at least one surface of an inner peripheral surface and an outer peripheral surface of the cup unit Providing a liquid containing water to hold the liquid containing water on the at least one surface, and b) supplying a processing liquid onto the substrate from the processing liquid supply unit, The liquid containing water is substantially electrically grounded while the liquid containing water is held on one surface.

  The invention described in claim 30 is the substrate processing method according to claim 29, wherein the at least one surface of the cup portion is subjected to a hydrophilic treatment.

  The invention according to claim 31 is the substrate processing method according to claim 29, wherein the cup portion has a fiber material or a mesh member on the at least one surface.

  A thirty-second aspect of the invention is the substrate processing method according to any one of the thirty-ninth to thirty-first aspects, wherein the normal line of the substrate is directed in the vertical direction, and the cup portion is moved relative to the holding portion by an elevating mechanism. The at least one surface includes the outer peripheral surface, and the step a) is performed while the preceding substrate processed prior to the substrate is held by the holding unit. In the step a), the pure water scattered from the preceding substrate is disposed on the outer peripheral surface by disposing the upper end of the cup portion below the preceding substrate while discharging pure water from the processing liquid supply unit. To be granted.

  According to a thirty-third aspect of the present invention, a holding unit that holds a substrate, a processing liquid supply unit that supplies at least pure water as a processing liquid onto the substrate, each of which is formed of an insulating material, and the holding unit A substrate processing apparatus comprising: at least one cup portion that surrounds the periphery of the substrate and receives a processing liquid scattered from the substrate; and a) a substrate processing method for processing the substrate, wherein: a) the most of the at least one cup portion A step of applying a liquid containing water to the outer peripheral surface of the outermost cup portion located on the outer side to hold the liquid containing water on the outer peripheral surface; b) applying the processing liquid on the substrate from the processing liquid supply unit And a supplying step.

  A thirty-fourth aspect of the invention is the substrate processing method according to the thirty-third aspect, wherein the outer peripheral surface of the outermost cup portion is subjected to a hydrophilic treatment.

  The invention according to claim 35 is the substrate processing method according to claim 33, wherein the outermost cup portion has a fiber material or a mesh member on the outer peripheral surface.

  A thirty-sixth aspect of the present invention is the substrate processing method according to any one of the thirty-third to thirty-fifth aspects, wherein the normal line of the substrate is directed vertically and the at least one cup portion is held by the lifting mechanism. The a) step is performed while the preceding substrate to be processed prior to the substrate is held by the holding unit, and in the a) step, the processing is performed. By discharging the pure water from the liquid supply unit and disposing the upper end of the at least one cup part below the preceding substrate, pure water scattered from the preceding substrate is given to the outer peripheral surface.

  According to the present invention, it is possible to suppress the charging potential of the cup portion that occurs when pure water is scattered without significantly increasing the manufacturing cost of the substrate processing apparatus. It is possible to prevent electric discharge from occurring.

  In the inventions of claims 2, 3 and 10 to 12, the charging potential can be suppressed over the entire circumference of the cup portion. In the inventions of claims 6 and 20, the substrate processing having a plurality of cup portions. In the apparatus, the charged potential of the cup portion due to scattered pure water can be reliably suppressed.

  Further, in the inventions of claims 7 and 21, in the substrate processing apparatus having a plurality of cup portions, the charging potential of the inner cup portion where pure water is scattered can be suppressed by the outer cup portion, In the inventions 13 to 17, 23, and 29 to 32, the charging potential of the cup portion can be further suppressed.

  Further, in the invention of claim 11, a member having a small specific resistance can be easily provided on the entire circumference of the cup portion. In the inventions of claims 15, 16, 30 and 31, on at least one surface of the cup portion. A liquid containing water can be easily retained.

  In the inventions of claims 17 and 26, a liquid containing water can be easily applied to the outer peripheral surface. In the invention of claim 19, in the cup portion where the inner peripheral surface needs to be water repellent, The charging potential of the part can be suppressed.

  In the inventions of claims 22 to 26 and 33 to 36, the charged potential of the cup portion can be suppressed without affecting the process. In the inventions of claims 24, 25, 34 and 35, A liquid containing water can be easily held on the outer peripheral surface of the outer cup portion.

  In the invention of claim 28, the cylindrical member can be formed at low cost, and in the inventions of claims 32 and 36, pure water can be efficiently applied to the outer peripheral surface of the cup portion.

  FIG. 1 is a diagram showing a configuration of a substrate processing apparatus 1 according to a first embodiment of the present invention. The substrate processing apparatus 1 supplies a processing liquid to a semiconductor substrate 9 (for example, a silicon substrate, hereinafter simply referred to as “substrate 9”) having an insulating film (for example, an oxide film) formed on its surface, and performs etching or the like. It is a device that performs the process.

  As shown in FIG. 1, the substrate processing apparatus 1 is disposed above the substrate holding unit 2 that holds the substrate 9 from the lower side and the main surface on the upper side of the substrate 9 (hereinafter referred to as “upper surface”). 1, a processing liquid supply unit 3 that discharges a cleaning liquid, a cup unit 41 that surrounds the periphery of the substrate holding unit 2, a lifting mechanism 5 that is a cylinder mechanism that moves the cup unit 41 in the vertical direction in FIG. The control part 10 which controls a structure is provided. In FIG. 1, for convenience of illustration, a part of the substrate holding portion 2 is drawn in cross section (the same applies to FIGS. 3 to 7, 9, 12, 13, and FIGS. 15 to 24). .

  The substrate holding unit 2 includes a chuck 21 that horizontally holds the substantially disk-shaped substrate 9 from the lower side and the outer peripheral side, and a rotation mechanism 22 that rotates the substrate 9 together with the chuck 21. The rotation mechanism 22 includes a shaft 221 connected to the lower side of the chuck 21, and a motor 222 that rotates the shaft 221. When the motor 222 is driven, the rotation mechanism 22 is parallel to the normal direction of the substrate 9 and the center of the substrate 9. The substrate 9 rotates together with the shaft 221 and the chuck 21 about the central axis J1 passing through the shaft.

  The processing liquid supply unit 3 includes a discharge unit 32 connected to the supply pipe 31. The supply pipe 31 is branched on the side opposite to the discharge unit 32, and one is connected to a pure water supply source via a pure water valve 331, and the other is connected to a predetermined chemical liquid via a chemical liquid valve 332. Connect to the source. In the processing liquid supply unit 3, the pure water valve 331 or the chemical liquid valve 332 is opened, so that the processing liquid which is pure water or (diluted) chemical liquid is supplied onto the substrate 9 from the discharge unit 32. In addition, the chemical | medical solution discharged from the discharge part 32 is a liquid containing water, and has electroconductivity.

  The cup portion 41 has a peripheral wall portion 411 that is disposed on the outer periphery of the chuck 21 and prevents the processing liquid supplied onto the substrate 9 from being scattered to the periphery, and the upper portion of the peripheral wall portion 411 is on the processing liquid supply portion 3 side ( The sloped portion 412 has a diameter that decreases toward the upper side. In the present embodiment, the peripheral wall portion 411 is formed of a fluororesin such as Teflon (registered trademark) or vinyl chloride resin, the inner peripheral surface 411a has water repellency (hydrophobicity), and the outer peripheral surface 411b It has hydrophilicity by being subjected to hydrophilic treatment such as ozone treatment. Depending on the material of the cup portion 41, the hydrophilicity (wetting property) may be improved by increasing the roughness of the outer peripheral surface 411b.

  An annular bottom portion 413 that protrudes toward the central axis J1 and covers the lower side of the chuck 21 is attached to the lower end portion of the peripheral wall portion 411. The bottom portion 413 is provided with a discharge port (not shown) for discharging the cleaning liquid. In addition, an auxiliary drainage portion 414 is formed at the lower end portion of the peripheral wall portion 411. The auxiliary drainage portion 414 is formed in an annular shape on the side opposite to the bottom portion 413 and the tip is bent upward. As will be described later, the outer peripheral surface 411b of the peripheral wall portion 411. The water given to is discharged through the auxiliary drainage part 414. The auxiliary drainage part 414 is formed of a conductive material and is grounded by the grounding part 61 at a position away from the cup part 41.

  Next, the flow of operations in which the substrate processing apparatus 1 supplies the processing liquid to the substrate and processes the substrate will be described with reference to FIG. In the substrate processing apparatus 1, processing is performed using an unnecessary substrate (so-called dummy substrate) as preparation before actually processing the substrate 9. First, the elevating mechanism 5 lowers the cup portion 41 until the upper end portion of the cup portion 41 is positioned below the chuck 21, and the dummy substrate is placed on the chuck 21 by the external transport mechanism. Held.

  FIG. 3 is a diagram showing the substrate processing apparatus 1 immediately after the dummy substrate 9 a is held by the substrate holding unit 2. When the dummy substrate 9a is held, pure water is supplied onto the upper surface of the dummy substrate 9a by opening only the pure water valve 331 (see FIG. 1) in the processing liquid supply unit 3, and the substrate holding unit 2 The rotation of the dummy substrate 9a is started. At this time, pure water supplied from the processing liquid supply unit 3 and scattered from the rotating dummy substrate 9 a adheres to the outer peripheral surface 411 b of the inclined part 412 in the cup part 41. As described above, the outer peripheral surface 411b is hydrophilized, and the pure water applied to the inclined portion 412 spreads along the outer peripheral surface 411b while being held on the outer peripheral surface 411b, and the peripheral wall portion 411. A thin water layer (that is, a water film, indicated by a thick line denoted by reference numeral 71 in FIG. 3) is formed on the outer peripheral surface 411b (step S10). As will be described later, since water or other liquid may be held on the inner peripheral surface of the cup portion, the content of the generalized process is shown in step S10 of FIG.

  Further, excess water scattered from the dummy substrate 9a reaches the auxiliary drainage part 414 along the outer peripheral surface 411b and is discharged. Actually, the periphery of the substrate processing apparatus 1 is covered with a dedicated cover, so that pure water splashing outward from the cup portion 41 does not become a problem (see FIGS. 4, 13 and later described). The same applies to the substrate processing apparatuses 1, 1a, and 1b in FIG.

At this time, carbon dioxide (CO ₂ ) or the like in the air dissolves in the water layer 71 on the outer peripheral surface 411b, so that the water layer 71 is sufficiently smaller than the peripheral wall portion 411 formed of an insulating material. It will have a specific resistance. That is, a surface layer having conductivity is formed on the outer peripheral surface 411 b of the cup portion 41. Further, the water layer 71 continues to the auxiliary drainage part 414, and is thereby substantially electrically grounded by the grounding part 61 via the auxiliary drainage part 414.

  When pure water is applied to the outer peripheral surface 411b for a predetermined time while rotating the dummy substrate 9a, the pure water valve 331 in FIG. 1 is closed to stop the discharge of pure water and the rotation of the dummy substrate 9a is stopped. The Then, after the dummy substrate 9a is taken out by the external transport mechanism, the substrate 9 to be processed is placed on the chuck 21 and held by the substrate holder 2 (that is, the substrate 9 is loaded). (Step S11). Subsequently, the cup part 41 is raised and the chuck 21 is accommodated in the cup part 41. Thereafter, rotation of the substrate 9 by the substrate holding unit 2 is started, and pure water is supplied onto the upper surface of the substrate 9 by opening only the pure water valve 331 in the processing liquid supply unit 3, so A pre-cleaning process (pre-rinsing) with water is performed (step S12). At this time, pure water supplied from the processing liquid supply unit 3 and scattered from the rotating substrate 9 is received by the inner peripheral surface 411 a of the cup unit 41, thereby being frictionally charged on the inner peripheral surface 411 a of the cup unit 41. However, in the substrate processing apparatus 1, the charge capacity (capacitance) of the peripheral wall portion 411 is increased by the water layer 71 (see FIG. 3) which is a surface layer in which conductivity is generated, whereby the inner peripheral surface 411a. The magnitude of the charging potential (relative to the ground potential) does not increase significantly (that is, the charging potential of the cup portion 41 is suppressed as compared with the case where the water layer 71 is not provided). Therefore, the substrate 9 on the chuck 21 is hardly inductively charged.

  Subsequently, the pure water valve 331 is closed in the processing liquid supply unit 3 and the chemical liquid valve 332 is opened, whereby the processing liquid applied to the upper surface of the substrate 9 is switched from pure water to chemical liquid (step). S13). The application of the chemical solution to the substrate 9 is continued for a predetermined time, whereby the substrate 9 is processed using the chemical solution. As in the case of supplying pure water, the chemical liquid supplied from the processing liquid supply unit 3 and scattered from the rotating substrate 9 is received by the inner peripheral surface 411a of the cup part 41 and discharged from the discharge port in the bottom part 413. Is done.

  When the chemical liquid is applied to the substrate 9 for a predetermined time, the chemical liquid valve 332 is closed and the pure water valve 331 is opened, so that the processing liquid applied to the upper surface of the substrate 9 is changed from the chemical liquid to the pure water. After that, the upper and lower portions of the cup portion 41 (the end portion of the inclined portion 412) are lowered below the chuck 21 by the elevating mechanism 5 (see FIG. 3), and the post-cleaning of the substrate 9 with pure water is performed. (Step S14). At this time, pure water supplied from the processing liquid supply unit 3 and scattered from the rotating substrate 9 adheres to the outer peripheral surface 411 b of the inclined portion 412 of the peripheral wall portion 411. In this way, when pure water is discharged from the processing liquid supply unit 3 in the post-cleaning of the substrate 9, the pure water that scatters from the substrate 9 by disposing the upper end portion of the cup portion 41 below the substrate 9. Is easily and efficiently applied to the outer peripheral surface 411b of the cup portion 41. Therefore, even if the water layer 71 on the outer peripheral surface 411b of the cup portion 41 is dried and partially disappeared, the water layer 71 is repaired by replenishing the outer peripheral surface 411b with pure water. Will be.

  When the post-cleaning of the substrate 9 with pure water is completed, the discharge of pure water is stopped and the rotation of the substrate 9 is stopped. After the substrate 9 is taken out by the external transport mechanism (that is, after the substrate 9 is unloaded) (step S15), the next substrate 9 to be processed is placed on the chuck 21 and placed on the substrate holder 2. (Steps S16 and S11). Then, similarly to the above operation, pre-cleaning of the substrate 9 with pure water (step S12), processing of the substrate 9 with chemical solution (step S13), and post-cleaning of the substrate 9 with pure water (step S14) are performed. . At this time, in the substrate processing apparatus 1, pure water is given to the outer peripheral surface 411 b of the cup portion 41 while the preceding substrate 9 processed prior to the current substrate 9 is held by the substrate holding portion 2. As a result, the charged potential of the cup portion 41 can be reliably suppressed. When the post-cleaning of the substrate 9 is completed, the substrate 9 is then unloaded (step S15).

  When the processes in steps S11 to S15 are repeated for a desired number of substrates 9 (step S16), the operation in the substrate processing apparatus 1 is completed.

  As described above, in the single wafer type substrate processing apparatus 1 of FIG. 1, the cup portion 41 that receives the processing liquid scattered from the substrate 9 by surrounding the periphery of the substrate holding portion 2 is formed of an insulating material, When processing the substrate 9, water is retained on the outer peripheral surface 411 b of the cup portion 41. This suppresses the charged potential of the cup portion 41 that occurs when pure water is scattered without significantly increasing the manufacturing cost of the substrate processing apparatus 1 by forming the entire cup portion with a special conductive material. As a result, it is possible to prevent electric discharge from occurring on the substrate 9 when the processing liquid is supplied to the substrate 9 due to induction charging of the substrate 9.

  Moreover, in the cup part 41, water is easily hold | maintained in the outer peripheral surface 411b only by performing a hydrophilization process to the outer peripheral surface 411b, and without providing an expensive component separately, the peripheral wall part 411 is provided in the outer peripheral surface 411b. Therefore, it is possible to easily form a surface layer having a smaller specific resistance. Furthermore, the water potential 71 of the cup part 41 can be further suppressed by substantially electrically grounding the water layer 71 in a state where water is held in the cup part 41.

  FIG. 4 is a diagram illustrating another example of the substrate processing apparatus 1 that suppresses the charging potential by forming a water layer in the cup portion. In the cup part 41 of the substrate processing apparatus 1 of FIG. 4, the hydrophilization process with respect to the outer peripheral surface 411b of the peripheral wall part 411 is abbreviate | omitted, and the fiber material 46 (it shows with a thick line in FIG. 4) along the outer peripheral surface 411b. Is different from the substrate processing apparatus 1 of FIG.

  In the substrate processing apparatus 1 of FIG. 4, as in the case of the substrate processing apparatus 1 of FIG. 1, pure water scattered from the rotating substrate 9 with the upper end portion of the cup portion 41 positioned below the chuck 21 The pure water is applied to the outer peripheral surface 411b of the peripheral wall portion 411, and the pure water soaks into the fiber material 46 and is easily held by the outer peripheral surface 411b. The pure water soaked in the fiber material 46 dissolves carbon dioxide in the air and lowers the specific resistance, whereby a surface layer having conductivity is formed on the outer peripheral surface 411b of the cup portion 41. The water in the fiber material 46 is substantially electrically grounded by the grounding portion 61. In the substrate processing apparatus 1 of FIG. 4, the charged potential of the cup portion 41 that is generated when pure water is scattered in the processing of the substrate 9 is suppressed by the water layer formed on the outer peripheral surface 411b. As a result, it is possible to prevent discharge from occurring on the substrate 9 when the processing liquid is supplied to the substrate 9 due to induction charging of the substrate 9.

  In addition, in the substrate processing apparatus 1 of FIG. 4, instead of the fiber material 46, for example, a mesh member formed of a fluororesin is provided, and when pure water is scattered by holding water in the mesh member. The generated charging potential of the cup portion 41 may be suppressed.

  FIG. 5 is a view showing still another example of the substrate processing apparatus 1 that suppresses the charging potential by forming a water layer in the cup portion. In the cup part 41 of the substrate processing apparatus 1 of FIG. 5, the hydrophilization process with respect to the outer peripheral surface 411b of the peripheral wall part 411 is abbreviate | omitted, and a hydrophilization process is performed with respect to the internal peripheral surface 411a. Further, the bottom portion 413a of the cup portion 41 spreads in an annular shape inward from the lower end portion of the peripheral wall portion 411, and the tip is bent upward. The bottom portion 413a is formed of a conductive material having corrosion resistance to the processing liquid, and the grounding portion 61 is connected to the bottom portion 413a. Other configurations are the same as those of the substrate processing apparatus 1 of FIG.

  When the substrate 9 is processed by the substrate processing apparatus 1 in FIG. 5, in the processing in step S <b> 10 in FIG. 2, the upper surface of the dummy substrate with the chuck 21 holding the dummy substrate accommodated in the cup portion 41. The pure water is supplied to the top, and the rotation of the dummy substrate by the substrate holding unit 2 is started (that is, the pure water is not applied to the outer peripheral surface 411b of the cup unit 41). As a result, pure water supplied from the processing liquid supply unit 3 and scattered from the rotating dummy substrate adheres to the inner peripheral surface 411a of the cup unit 41, and a water layer 71 having conductivity is formed on the inner peripheral surface 411a. Is done. Thereafter, after the dummy substrate is taken out, the substrate 9 to be processed is placed on the chuck 21 (step S11), the substrate 9 is pre-cleaned with pure water (step S12), and the substrate 9 is processed with a chemical solution (step S13). ) And post-cleaning of the substrate 9 with pure water (step S14). In the post-cleaning of the substrate 9 with pure water in step S14, the chuck 21 is kept accommodated in the cup portion 41.

  In the substrate processing apparatus 1 of FIG. 5, the water is held on the inner peripheral surface 411 a of the cup portion 41, whereby the inner peripheral surface of the cup portion 41 is caused by pure water splashing from the substrate 9 rotating during the processing of the substrate 9. 411a suppresses frictional charging, and even if frictional charging occurs, the charging potential of the cup portion 41 is reliably suppressed by the water layer 71 that is substantially grounded via the grounding portion 61. The As a result, it is possible to prevent electric discharge from occurring on the substrate 9 when the processing liquid is supplied to the substrate 9 due to induction charging of the substrate 9. In the substrate processing apparatus 1 of FIG. 5, since the part where the conductive material is used is only a part of the cup part 41 (bottom part 413a), the manufacturing cost of the cup part 41 does not increase significantly. In the substrate processing apparatus 1 of FIG. 5, a fiber material or a mesh member may be provided on the inner peripheral surface 411a of the cup portion 41, and water may be held on the inner peripheral surface 411a.

  Next, another method for suppressing the charging potential of the cup portion in the substrate processing apparatus 1 will be described. FIG. 6 is a view showing still another example of the substrate processing apparatus 1. In the cup portion 41A of the substrate processing apparatus 1 in FIG. 6, a conductive resin film 47 (indicated by a thick line in FIG. 6) is used instead of the fiber material 46 in the substrate processing apparatus 1 in FIG. Affixed to Thereby, the entire outer peripheral surface 411 b of the cup portion 41 </ b> A becomes the surface of the conductive resin film 47. A grounding portion 61 is directly connected to the conductive resin film 47 so that the conductive resin film 47 is electrically grounded. The conductive resin film 47 may be fixed by screwing or the like in addition to adhesion, and further, the conductive resin film may be formed on the outer peripheral surface of the main body of the cup portion 41A by coating.

  Further, when the substrate 9 is processed by the substrate processing apparatus 1, the process of step S10 in FIG. 2 is omitted, and the chuck 21 is accommodated in the cup portion 41A even after the post-cleaning of the substrate 9 with pure water in step S14. (That is, pure water is not applied to the outer peripheral surface 411b of the cup portion 41A).

  As described above, in the substrate processing apparatus 1 of FIG. 6, a member having a specific resistance smaller than that of the main body can be easily provided on the entire circumference of the cup portion 41 </ b> A by simply attaching the conductive resin film 47 to the outer peripheral surface of the main body. it can. As a result, the charge capacity of the peripheral wall portion 411 is increased, and the charged potential of the cup portion 41A generated when pure water is scattered without performing the operation of applying pure water to the outer peripheral surface 411b over the entire periphery of the peripheral wall portion 411. Therefore, it is possible to prevent the occurrence of discharge on the substrate 9. Further, in the substrate processing apparatus 1 of FIG. 6, the conductive resin film 47 is electrically grounded, so that the charged potential of the cup portion 41 </ b> A can be further suppressed.

  FIG. 7 is a view showing still another example of the substrate processing apparatus 1, and FIG. 8 is a cross-sectional view of the cup portion 41A at the position of the arrow AA in FIG. As shown in FIGS. 7 and 8, the peripheral wall portion 411 of the cup portion 41A has a plurality of (four in the example of FIG. 8) formed of a conductive resin, conductive carbon (for example, glassy carbon), or the like. ) Has a conductive member 47a, and the conductive member 47a has a smaller specific resistance than the main body of the cup portion 41A formed of an insulating material (in the cup portion 41A of FIG. 7, the portion of the peripheral wall portion 411 excluding the conductive member 47a). Is done. The plurality of conductive members 47a are arranged at equal intervals in the circumferential direction of the cup portion 41A (that is, arranged at equal angular intervals on the circumference centered on the central axis J1). Actually, the plurality of conductive members 47a are formed on the outer peripheral surface 411b of the cup portion 41A and are respectively fitted into a plurality of recesses extending along the central axis J1, and are opposite to the central axis J1 of the conductive member 47a. The surface on the side is included in the outer peripheral surface 411b of the peripheral wall portion 411. In addition, each conductive member 47 a is grounded by the ground portion 61. As described above, even when the outer peripheral surface 411b partially includes the surface of the conductive member 47a having a specific resistance smaller than that of the main body of the cup portion 41A, the charge capacity of the peripheral wall portion 411 is increased and the pure water is scattered. The charging potential of the cup portion 41A that occurs at the time is suppressed.

  As described above, in the cup portion 41A of FIGS. 6 and 7, the outer peripheral surface 411b includes the surface of a member having a specific resistance smaller than that of the main body, so that the charged potential of the cup portion 41A generated when pure water is scattered is reduced. Thus, it is possible to prevent discharge from occurring on the substrate 9 due to induction charging of the substrate 9. Moreover, the cup part 41A of FIG. 6 and FIG. 7 can be manufactured at low cost compared with the case where the whole cup part is formed with a special conductive material.

Next, still another method for suppressing the charging potential of the cup portion in the substrate processing apparatus 1 will be described. FIG. 9 is a view showing still another example of the substrate processing apparatus 1, and FIG. 10 is a cross-sectional view of the cup portion 41B at the position of the arrow BB in FIG. As shown in FIG. 9 and FIG. 10, a deep annular groove 415 centering on the central axis J1 is formed in the peripheral wall portion 411 of the cup portion 41B, and water in which carbon dioxide or the like is dissolved is formed in the annular groove 415. Or a liquid having conductivity (such as a solution of ammonium chloride (NH ₄ Cl) dissolved in methanol (CH ₃ OH)). 47b "is injected. As shown in FIG. 9, the opening on the inclined portion 412 side of the annular groove 415 is closed by an annular lid member 416, whereby the sealed liquid 47 b is held (enclosed) inside the peripheral wall portion 411. In addition, a part of the outer side of the annular groove 415 in the peripheral wall portion 411 is formed of a conductive material such as a conductive resin as the electrode portion 417, and the electrode portion 417 is connected to the ground portion 61, thereby 47b is substantially grounded.

  As described above, in the cup portion 41B shown in FIGS. 9 and 10, the peripheral wall portion 411 that surrounds the periphery of the substrate holding portion 2 and receives the processing liquid splashed from the substrate 9 is provided on the main body of the cup portion 41B (the cup portion in FIG. 9). In 41B, it has a part where specific resistance is smaller than the material which forms the part in the surrounding wall part 411 except the sealing liquid 47b over the perimeter. Thereby, the charge capacity of the peripheral wall portion 411 is increased, and the charged potential of the cup portion 41B generated when the pure water is scattered can be suppressed over the entire periphery of the peripheral wall portion 411, and the occurrence of discharge on the substrate 9 can be suppressed. It becomes possible to prevent. In addition, since the sealing liquid 47b is electrically grounded, the charging potential of the cup portion 41B can be further suppressed. In addition, since pure water is normally used for the process of the board | substrate 9, when using the water which the carbon dioxide melt | dissolved as an enclosure liquid, an enclosure liquid can be prepared easily.

  FIG. 11 is a diagram illustrating another example of the cup portion 41B, and is a cross-sectional view of the cup portion 41B corresponding to FIG. In the cup portion 41B of FIG. 11, a plurality of deep holes 415a (actually, four holes 415a having substantially the same depth as the annular groove 415 of FIG. 9) having a circular cross section perpendicular to the central axis J1 are peripheral walls. The cylindrical conductive member 47c formed of conductive resin or conductive carbon (for example, glassy carbon) is inserted into each hole 415a. . In addition, the conductive member 47c is connected to the grounding portion 61 (not shown) through a minute hole formed outside the conductive member 47c in the peripheral wall portion 411. Thus, even if the cup portion 41B has a portion having a smaller specific resistance than the material forming the main body partially in the circumferential direction of the peripheral wall portion 411 inside the peripheral wall portion 411, The charging potential of the cup portion 41B is suppressed.

  As described above, in the cup portion 41B of FIGS. 10 and 11, when the peripheral wall portion 411 has a portion having a smaller specific resistance than the material forming the main body of the cup portion 41B, pure water is scattered. The generated charging potential of the cup portion 41B can be suppressed, and thereby, it is possible to prevent discharge from occurring on the substrate 9 due to induction charging of the substrate 9. Moreover, the cup part 41B of FIG. 10 and FIG. 11 can be manufactured at low cost compared with the case where the whole cup part is formed with a special electrically-conductive material. Note that an annular conductive member formed of a conductive resin, conductive carbon, or the like may be inserted into the annular groove 415 in FIG. 10, and a sealing liquid may be sealed in the hole 415 a in FIG. 11. Further, the peripheral wall portion 411 may have a portion of the conductive member and a portion of the encapsulated liquid inside while shifting the positions in the circumferential direction.

  Next, still another method for suppressing the charging potential of the cup portion in the substrate processing apparatus 1 will be described. FIG. 12 is a view showing still another example of the substrate processing apparatus 1. In the substrate processing apparatus 1 of FIG. 12, the inner peripheral surface follows the outer peripheral surface 411b of the peripheral wall portion 411 and a small gap (for example, 1 mm) around the peripheral wall portion 411 of the cup portion 41C. A substantially cylindrical cylindrical member 81 forming a gap of (mm) to 10 centimeters (cm) in width (illustration of parallel oblique lines in cross section in FIG. 12 is omitted. Cylindrical member in FIG. The same applies to 81a). The cylindrical member 81 is formed of a metal such as stainless steel, and the surface is coated with a fluororesin such as Teflon (registered trademark). The cylindrical member 81 is grounded by the grounding portion 61.

  In the substrate processing apparatus 1 of FIG. 12, the conductive cylindrical member 81 is provided close to the outer peripheral surface 411b of the cup portion 41C, so that the charge capacity of the peripheral wall portion 411 is substantially increased. This suppresses the charging potential of the cup portion 41 </ b> C that occurs when pure water is scattered without significantly increasing the manufacturing cost of the substrate processing apparatus 1 by forming the entire cup portion with a special conductive material. As a result, it is possible to prevent electric discharge from occurring on the substrate 9 due to induction charging of the substrate 9. In addition, since the cylindrical member 81 is grounded, the charging potential of the cup portion 41C can be further suppressed.

  By the way, in the processing of the substrate 9 in the substrate processing apparatus 1, it is required to prevent metal impurities from adhering to the substrate 9 in order to ensure a certain yield in the manufacture of semiconductor products. Therefore, in order to avoid elution of the metal in the cup portion, it is not possible to use metal inside or on the surface of the cup portion with a normal design. On the other hand, in the substrate processing apparatus 1 of FIG. 12, since the cylindrical member 81 is provided apart from the cup portion 41C, it can be formed at low cost using metal. The cylindrical member 81 is prevented from being corroded by being coated with a fluororesin. Of course, the cylindrical member 81 may be formed of a conductive resin or conductive carbon.

  FIG. 13 is a diagram showing a configuration of a substrate processing apparatus 1a according to the second embodiment of the present invention. In the substrate processing apparatus 1a of FIG. 13, a plurality of concentric cup portions 42 to 45 are provided, and the processing liquid supply section 3a can discharge a plurality of types of chemical solutions. The lifting mechanism 5 of the substrate processing apparatus 1a has a motor 51 and a ball screw mechanism 52, and the lifting mechanism 5 allows the cup portions 42 to 45 to move integrally with the substrate holding portion 2 in the direction along the central axis J1. It is said. The configuration of the substrate holding unit 2 is the same as that of the substrate processing apparatus 1 of FIG. 1, and the control unit is not shown in the substrate processing apparatus 1a of FIG. 13 (the same applies to the substrate processing apparatus 1b of FIG. 20 described later). ).

  In each cup part 42-45, the surrounding wall part 421,431,441,451 and the bottom part 423,433,443,453 are provided separately, and several bottom part 423,433,443,453 is integrated. It is formed. Specifically, the plurality of bottom portions 423, 433, 443, and 453 formed of an insulating material are formed in an annular shape centering on the central axis J1, and the bottom surfaces of the plurality of bottom portions 423, 433, 443, and 453 (processing liquid supply unit) A grounded conductive plate 490 is provided on the surface opposite to 3a. The boundary between the bottom portion 423 and the bottom portion 433, the boundary between the bottom portion 433 and the bottom portion 443, the boundary between the bottom portion 443 and the bottom portion 453, and the boundary outside the bottom portion 453 are respectively provided on the processing liquid supply unit 3a side (upward ) And cylindrical partition portions 491, 492, 493, and 494 centering on the central axis J1 are provided. The lower portions of the peripheral wall portions 421, 431, 441, and 451 are arranged so as to straddle the partition portions 491, 492, 493, and 494, and the inner cylindrical portions 4211, 4311, 4411, and 4511 and the outer cylindrical portions 4212, 4312, 4412, and 4512. (Refer to the symbol on the left side of FIG. 13). Further, the upper portions of the peripheral wall portions 421, 431, 441, and 451 are inclined portions 422, 432, 442, and 452 having a diameter that decreases toward the processing liquid supply portion 3a, and the cup portions are arranged on the inner side. The inclined portions 422, 432, 442, and 452 are disposed at positions away from the processing liquid supply unit 3a (ie, downward) by about 42 to 45.

  Each of the peripheral wall portions 421, 431, 441, 451 is formed of an insulating material, and each of the inner peripheral surfaces 421a, 431a, 441a, 451a and the outer peripheral surfaces 421b, 431b, 441b, 451b (refer to the reference numerals on the left side of FIG. 13). Is subjected to the same hydrophilic treatment. In the following description, the inner side surfaces of the inner cylindrical portions 4211, 4311, 4411, and 4511 are part of the inner peripheral surfaces 421a, 431a, 441a, and 451a below the peripheral wall portions 421, 431, 441 and 451. The outer cylindrical surfaces 4212, 4312, 4412, and 4512 are regarded as being part of the outer peripheral surfaces 421b, 431b, 441b, and 451b.

  The elevating mechanism 5 includes a support member 53 formed of the same insulating material as the cup portions 42 to 45, and an end portion of the outer cup portion 45 (hereinafter also referred to as “outermost cup portion 45”). Connected to the peripheral wall 451. The peripheral wall portions 421, 431, 441, 451 of the plurality of cup portions 42 to 45 are partially connected to each other, and when the motor 51 is driven, the plurality of peripheral wall portions 421, via the support member 53. 431, 441 and 451 move up and down integrally with respect to the substrate holding part 2 in the direction along the central axis J1. The support member 53 is provided with a conductive sheet 531 that is grounded via the ball screw mechanism 52, and the surface of the support member 53 is subjected to the same hydrophilic treatment as the cup portions 42 to 45.

  The treatment liquid supply unit 3 a has four valves 331 to 334, pure water is discharged from the discharge unit 32 by opening the pure water valve 331, and discharge by opening the first chemical liquid valve 332. The first chemical liquid is discharged from the part 32, the second chemical liquid is discharged from the discharge part 32 by opening the second chemical liquid valve 333, and the third chemical liquid is discharged from the discharge part 32 by opening the third chemical liquid valve 334. Is discharged. The first to third chemical liquids are conductive and liquid containing water.

  FIG. 14 is a diagram showing a part of the flow of operations in which the substrate processing apparatus 1a supplies the processing liquid to the substrate to process the substrate, and shows the processing performed in step S13 of FIG. First, basic operations in the substrate processing apparatus 1a will be described with reference to steps S11 to S16 in FIG. 2 and FIG.

  In the basic operation of the substrate processing apparatus 1a of FIG. 13, first, the substrate 9 is placed on the chuck 21 and held by the substrate holding unit 2 (FIG. 2: step S11), and then the lifting mechanism 5 As shown in FIG. 15, the cup portions 42 to 45 are raised, and the substrate 9 is positioned between the inclined portion 422 of the inner peripheral wall portion 421 and the inner cylindrical portion 4211 (hereinafter referred to as “pre-cleaning position”). Placed in. Then, the rotation of the substrate 9 is started, and pure water is supplied from the processing liquid supply unit 3a onto the substrate 9 (see FIG. 1), and the substrate 9 is pre-cleaned with pure water (step S12). At this time, pure water scattered from the rotating substrate 9 is received by the inner peripheral surface 421 a of the peripheral wall portion 421 of the cup portion 42. Excess pure water is discharged from a discharge port provided in the bottom 423.

  When a predetermined time elapses from the supply start time of pure water, the treatment liquid supply unit 3a stops the discharge of pure water, and then the cups 42 to 45 are moved down to bring the substrate 9 from the inside as shown in FIG. It arrange | positions in the position between the inclination part 432 of the 2nd surrounding wall part 431, and the inclination part 422 of the inner side surrounding wall part 421. FIG. In the substrate processing apparatus 1a, the rotation of the substrate 9 is maintained while the substrate 9 moves up and down, but may of course be temporarily stopped.

  And the discharge of the 1st chemical | medical solution by the process liquid supply part 3a is started, and the process using a 1st chemical | medical solution is performed with respect to the board | substrate 9 (FIG. 14: step S131). At this time, most of the first chemical solution scattered from the rotating substrate 9 is received by the inner peripheral surface 431a of the peripheral wall portion 431 of the cup portion 43, and from the first chemical solution dropped from the inner peripheral surface 431a, or from the substrate 9 Part of the scattered first chemical solution also adheres to the outer peripheral surface 421b of the inner peripheral wall portion 421. Excess first chemical liquid is recovered from a recovery port provided in the bottom portion 433 and reused (the same applies to second and third chemical liquids described later).

  After a lapse of a predetermined time from the start of the discharge of the first chemical liquid, the discharge of the first chemical liquid from the processing liquid supply unit 3a is stopped, and the elevating mechanism 5 raises the cup portions 42 to 45 and the substrate 9 is shown in FIG. Returned to the cleaning position. Subsequently, the supply of pure water onto the substrate 9 is started, and the first chemical solution on the substrate 9 is removed with pure water (step S132). After the discharge of pure water from the discharge part 32 is continued for a predetermined time, it is stopped and the substrate 9 is disposed between the inclined part 442 of the peripheral wall part 441 and the inclined part 432 of the peripheral wall part 431 by the lifting mechanism 5. . Then, the discharge of the second chemical solution is started, and the processing using the second chemical solution is performed on the substrate 9 (step S133). At this time, most of the second chemical liquid scattered from the rotating substrate 9 is received by the inner peripheral surface 441a of the peripheral wall portion 441 of the cup portion 44 (see FIG. 13). Further, the second chemical liquid dripped from the inner peripheral surface 441a and a part of the second chemical liquid scattered from the substrate 9 also adhere to the outer peripheral surface 431b of the inner peripheral wall portion 431.

  After a predetermined time has elapsed from the start of the discharge of the second chemical liquid, the discharge of the second chemical liquid from the processing liquid supply unit 3a is stopped. The substrate 9 is returned to the pre-cleaning position, and pure water is supplied onto the substrate 9 only for a predetermined time, whereby the second chemical on the substrate 9 is removed with pure water (step S134). Thereafter, the supply of pure water is stopped, and the substrate 9 is disposed between the inclined portion 452 of the peripheral wall portion 451 and the inclined portion 442 of the peripheral wall portion 441. Then, the discharge of the third chemical solution is started, and the processing using the third chemical solution is performed on the substrate 9 (step S135). At this time, most of the third chemical liquid scattered from the rotating substrate 9 is received by the inner peripheral surface 451 a of the peripheral wall portion 451 of the outermost cup portion 45. Further, the third chemical liquid dropped from the inner peripheral surface 451a and a part of the third chemical liquid scattered from the substrate 9 also adhere to the outer peripheral surface 441b of the peripheral wall portion 441.

  After a predetermined time has elapsed from the start of the discharge of the third chemical liquid, the discharge of the third chemical liquid from the processing liquid supply unit 3a is stopped, and the cup parts 42 to 45 are lowered, as shown in FIG. The upper end is disposed below the substrate 9. Then, pure water is discharged onto the substrate 9 from the discharge unit 32, and post-cleaning of the substrate 9 is performed with pure water (FIG. 2: step S14). At this time, pure water scattered from the rotating substrate 9 is applied to the outer peripheral surface 451 b of the inclined portion 452 of the peripheral wall portion 451. When the post-cleaning of the substrate 9 is completed, the substrate 9 is unloaded (step S15), and the next substrate 9 to be processed is loaded into the substrate processing apparatus 1a (steps S16 and S11).

  In actual processing in the substrate processing apparatus 1a, as a preliminary preparation, first, a dummy substrate is loaded and the same operations as in steps S12 to S14 are performed, and water is applied to the inner peripheral surface and outer peripheral surface of the cup portions 42 to 45. The liquid containing is hold | maintained (step S10). Specifically, in the process corresponding to step S12 (and steps S132 and S134), pure water scattered from the rotating dummy substrate is received by the inner peripheral surface 421a of the peripheral wall portion 421, and the inner periphery of the cup portion 42 is detected. In the surface 421a, a water layer (indicated by a thick line 72a in FIG. 15 and FIG. 17) is formed, and in the process corresponding to step S131, the first chemical liquid scattered from the rotating dummy substrate is the peripheral wall portion. It is received by the inner peripheral surface 431a of 431 and also adheres to the outer peripheral surface 421b of the peripheral wall portion 421, and a first chemical solution layer (see FIG. 16) is formed on each of the inner peripheral surface 431a of the cup portion 43 and the outer peripheral surface 421b of the cup portion 42. And a thick line denoted by reference numerals 73a and 72b in FIG. 17). In the process corresponding to step S133, the second chemical liquid scattered from the rotating dummy substrate is received by the inner peripheral surface 441a of the peripheral wall portion 441 and attached to the outer peripheral surface 431b of the peripheral wall portion 431. In each of the inner peripheral surface 441a and the outer peripheral surface 431b of the cup portion 43, a second chemical solution layer (indicated by bold lines with reference numerals 74a and 73b in FIG. 17) is formed. In the process corresponding to step S135, The third chemical liquid scattered from the rotating dummy substrate is received by the inner peripheral surface 451a of the peripheral wall portion 451 and adheres to the outer peripheral surface 441b of the peripheral wall portion 441, and the inner peripheral surface 451a and the cup portion 44 of the outermost cup portion 45. Each of the outer peripheral surfaces 441b is formed with a third chemical solution layer (indicated by thick lines with reference numerals 75a and 74b in FIG. 17). In the process corresponding to step S14, the pure water scattered from the rotating dummy substrate is received by the outer peripheral surface 451b of the peripheral wall portion 451, and the water in which the conductivity is generated also in the outer peripheral surface 451b of the outermost cup portion 45 is obtained. A layer (indicated by a thick line denoted by reference numeral 75b in FIG. 17) is formed. As a result, the inner peripheral surfaces 421a, 431a, 441a, 451a and the outer peripheral surfaces 421b, 431b, 441b, 451b of the cup portions 42 to 45 are water, first chemical solution, second chemical solution, or third chemical solution layers 72a, 73a. , 74a, 75a, 72b, 73b, 74b, and 75b as surface layers having lower specific resistance than the peripheral wall portions 421, 431, 441, and 451.

  Actually, when pure water is applied to the outer peripheral surface 451b of the outermost cup portion 45, pure water also adheres to the surface of the support member 53 of FIG. 13, so that the water layer 75b of the outer peripheral surface 451b is supported by The surface of the member 53 is substantially electrically grounded through the water layer, the conductive sheet 531, and the ball screw mechanism 52. That is, the water layer on the surface of the support member 53, the conductive sheet 531, and the ball screw mechanism 52 serve as a grounding portion for grounding the water layer 75 b. The conductive sheet 531 may be provided so as to be directly connected to the water layer 75b on the outer peripheral surface 451b.

  Then, after the dummy substrate is unloaded, the above steps S11 to S16 related to the basic operation of the substrate processing apparatus 1a are performed on the substrate 9 to be actually processed. At this time, due to the surface layer formed on the inner peripheral surface 421a of the inner cup portion 42 in FIG. 17, the cup is made of pure water scattered from the substrate 9 rotating in steps S12, S132, and S134. The frictional charging is suppressed from occurring on the inner peripheral surface 421a of the portion 42, and further, the outer peripheral surface 421b of the cup portion 42 and the inner peripheral surface and outer peripheral surface of the cup portions 43 to 45 outside thereof are formed by the surface layers. Inductive charging of the substrate 9 is reliably suppressed. Further, the surface layer formed on the outer peripheral surface 451b of the outermost cup portion 45 may cause frictional charging on the outer peripheral surface 451b of the outermost cup portion 45 due to the pure water scattered from the substrate 9 rotating in step S14. In addition, the induction charging of the substrate 9 is reliably suppressed by the surface layer formed in the outermost cup portion 45 and the cup portions 42 to 44 inside thereof. Furthermore, even if the bottom portions 423, 433, 443, and 453 of the cup portions 42 to 45 in FIG. 13 are charged, the charging potential of the bottom portions 423, 433, 443, and 453 is reduced by the conductive plate 490, and the substrate 9 induction charging is suppressed.

  In steps S12, S131 to S135, and S14 for the substrate 9 to be actually processed, the inner peripheral surfaces 421a, 431a, 441a, and 451a and the outer peripheral surfaces 421b, 431b, 441b, and 451b of the cup portions 42 to 45 are respectively provided. When the substrate 9 next to the substrate 9 is processed by applying the pure water, the first chemical solution, the second chemical solution, or the third chemical solution, the inner peripheral surfaces 421a, 431a, 441a of the cup portions 42 to 45, Each of 451a and outer peripheral surfaces 421b, 431b, 441b, and 451b reliably retains conductive water, the first chemical solution, the second chemical solution, or the third chemical solution.

  Here, it is the same structure as the substrate processing apparatus 1a of FIG. 13, Comprising: The board | substrate of the substrate processing apparatus of the comparative example by which the hydrophilic treatment is not performed to any of the internal peripheral surface and outer peripheral surface of several cup parts. An example of the discharge phenomenon will be described. In the substrate processing apparatus of the comparative example, pure water is supplied onto the substrate in a state where the substrate is disposed at the pre-cleaning position, so that the pure water is scattered on the innermost cup portion, and the pure water flows down. The cup is charged. The main body of the substrate is inductively charged due to this charging. At this time, if the state in which pure water remains on the substrate is maintained, as described above, carbon dioxide or the like dissolves and the pure water becomes conductive water, so that discharge occurs on the substrate. May occur. In addition, when the cup part moves up and down with the conductive water remaining on the substrate, the potential of the main body of the substrate changes due to the change in the relative position with the charged cup part. There is a case where electric discharge is generated on the substrate during raising and lowering (that is, dielectric breakdown of the insulating film on the substrate occurs).

  On the other hand, in the substrate processing apparatus 1a of FIG. 13, water, the first chemical solution, and the second chemical solution are formed on the inner peripheral surfaces 421a, 431a, 441a, and 451a and the outer peripheral surfaces 421b, 431b, 441b, and 451b of the cup portions 42 to 45. By processing the substrate 9 in a state where the chemical solution or the third chemical solution is held, the charged potential of the cup portion due to the scattered pure water is changed to the liquid containing water formed in the cup portion and other cup portions. It can be reliably suppressed by the layer. As a result, it is possible to prevent a discharge from occurring on the substrate 9 due to charging of the cup portion when supplying the processing liquid to the substrate 9 or when the cup portions 42 to 45 are moved up and down. Depending on the design of the substrate processing apparatus 1a, the inner cup portions 42 to 44 may also be substantially electrically grounded (the same applies to the substrate processing apparatus 1a of FIGS. 18 and 19 described later).

  FIG. 18 is a diagram showing another example of the substrate processing apparatus 1a. In the substrate processing apparatus 1a of FIG. 18, the conductive resin film 47 is stuck to the inner peripheral surface and the outer peripheral surface of the main body of each peripheral wall portion 421, 431, 441, 451 in the same manner as the cup portion 41A of FIG. The inner peripheral surfaces 421a, 431a, 441a, 451a and the outer peripheral surfaces 421b, 431b, 441b, 451b of 42A to 45A are the surfaces of the conductive resin film 47, respectively. In the substrate processing apparatus 1a of FIG. 18, the outer cylindrical portion 4512 of the peripheral wall portion 451 of the outermost cup portion 45 of FIG. 13 is omitted, and therefore the outer peripheral surface 451b corresponds to the outer peripheral surface of the inner cylindrical portion 4511. Contains parts. The outer peripheral surface 421 b of the outermost cup portion 45 is directly connected to the grounding portion 61. The arrangement of the plurality of cup portions 42A to 45A and other configurations of the apparatus are the same as those of the substrate processing apparatus 1a of FIG.

  When the substrate 9 is processed by the substrate processing apparatus 1a of FIG. 18, the processing of step S10 of FIG. (In other words, pure water is not applied to the outer peripheral surface 451b of the outermost cup portion 45A.) (Substrate processing apparatus 1a in FIG. 19 described later and substrate processing in FIGS. 21 to 23) The same applies to the device 1b).

  As described above, in the substrate processing apparatus 1a of FIG. 18, the inner peripheral surfaces 421a, 431a, 441a, 451a and the outer peripheral surfaces 421b, 431b, 441b, 451b of the cup portions 42A to 45A are the peripheral wall portions 421, 431, 441. , 451, the surface of the member having a specific resistance smaller than that of the main body, the charged potential of the cup portion due to the scattered pure water can be reliably suppressed. As a result, when the processing liquid is supplied to the substrate 9 For example, it is possible to prevent discharge on the substrate 9 due to charging of the cup portion. In addition, like the cup part 41A of FIG. 7, the inner peripheral surface and the outer peripheral surface of the cup parts 42A to 45A may partially include the surfaces of the conductive members arranged at equal intervals in the circumferential direction.

  FIG. 19 is a diagram showing still another example of the substrate processing apparatus 1a. In each of the cup portions 42B to 45B of the substrate processing apparatus 1a of FIG. 19, a plurality of rod-shaped conductive members (in FIG. 19) are disposed inside the peripheral wall portions 421, 431, 441, and 451, similarly to the cup portion 41B of FIG. The reference numeral 47c is attached and indicated by a thick line). Actually, the plurality of conductive members 47c are arranged at equal intervals in the circumferential direction of the peripheral wall portions 421, 431, 441, 451 (see FIG. 11). In addition, the inner peripheral surfaces 421a, 431a, 441a, 451a and the outer peripheral surfaces 421b, 431b, 441b, 451b of the cup portions 42B to 45B remain the surface of the insulating material and have water repellency (described later with reference to FIG. 22 and FIG. 23 in the substrate processing apparatus 1b). The arrangement of the plurality of cup portions 42B to 45B and other configurations of the apparatus are the same as those of the substrate processing apparatus 1a of FIG.

  In the substrate processing apparatus 1a of FIG. 19, in each of the plurality of cup parts 42B to 45B having the same structure, the peripheral wall parts 421, 431, 441, and 451 have their main bodies (in the cup parts 42B to 45B of FIG. The peripheral wall portions 421, 431, 441, and 451 each have a portion having a specific resistance smaller than that of the material forming the portion excluding the conductive member 47c. Thereby, the charged potential of the cup portion due to the scattered pure water can be reliably suppressed, and the occurrence of discharge on the substrate 9 can be prevented. In addition, a conductive member or a sealing liquid may be provided inside the entire circumference of the peripheral wall portions 421, 431, 441, and 451 (the same applies to the peripheral wall portion 451 in FIG. 22 described later).

  FIG. 20 is a diagram showing a substrate processing apparatus 1b having a plurality of cup portions 42 to 45 according to the third embodiment of the present invention. In the substrate processing apparatus 1b of FIG. 20, the outer cylindrical part 4512 of the peripheral wall part 451 of the outer cup part 45 (that is, the outermost cup part 45) in the substrate processing apparatus 1a of FIG. 13 is omitted. Further, only the outer peripheral surface 451b of the outermost cup portion 45 (however, a portion corresponding to the outer peripheral surface of the inner cylindrical portion 4511 of the outermost cup portion 45 in FIG. 13) is subjected to a hydrophilic treatment, and the outermost cup The inner peripheral surface 451a of the portion 45, and the inner peripheral surfaces 421a, 431a, 441a and the outer peripheral surfaces 421b, 431b, 441b of the other cup portions 42 to 44 remain the surface of the insulating material and have water repellency. Further, an auxiliary drainage portion 454 is provided at the lower end portion of the outermost cup portion 45 so as to expand in a ring shape on the side opposite to the outermost cup portion 45 and the tip bends upward. The drainage part 454 is grounded by the grounding part 61 at a position away from the outermost cup part 45. The shapes of the inner cup portions 42 to 44 and other configurations of the substrate processing apparatus 1b are the same as those of the substrate processing apparatus 1a of FIG.

  The basic operation of the substrate processing apparatus 1b is the same as that of the substrate processing apparatus 1a of FIG. 13, but the processing in advance preparation using a dummy substrate is different. Specifically, in the process using the dummy substrate (FIG. 2: step S10), the cup portions 42 to 45 are integrally moved in the direction along the central axis J1 with respect to the substrate holding portion 2 by the lifting mechanism 5. Thus, the upper end portion of the peripheral wall portion 451 of the outermost cup portion 45 is disposed below the dummy substrate. Subsequently, the discharge of pure water is started (see FIG. 17), and a water layer (reference numeral 75b in FIG. 20 is attached to the outer peripheral surface 451b of the outermost cup portion 45 with pure water scattered from the rotating dummy substrate. As shown in bold lines), the process of holding the liquid in the cup portion using the dummy substrate is completed. Then, the above-described steps S11 to S16 related to the basic operation are performed on the substrate 9 to be actually processed, similarly to the substrate processing apparatus 1a of FIG.

  At this time, although frictional charging occurs on the inner peripheral surface 421a of the cup portion 42 due to the pure water scattered from the substrate 9 rotating in steps S12, S132, and S134, it is formed on the entire outer peripheral surface 451b of the outermost cup portion 45. The electrically conductive water layer 75b can suppress the charging potential of the inner cup portion 42 to some extent, thereby preventing discharge from occurring on the substrate 9.

  As described above, in the substrate processing apparatuses 1 and 1b of FIGS. 1, 4 and 20, the liquid containing water is held only on the outer peripheral surface of the cup part. In the substrate processing apparatus 1 of FIG. The liquid containing water is held only on the inner peripheral surface, and in the substrate processing apparatus 1a of FIG. 13, the liquid containing water is held on the inner peripheral surface and the outer peripheral surface of the cup portion, thereby scattering pure water. The charging potential of the cup portion to be charged is suppressed. Therefore, from the viewpoint of suppressing the charging potential of the cup portion, it is necessary to hold a liquid containing water on at least one of the inner peripheral surface and the outer peripheral surface of the cup portion.

  By the way, depending on the design of the substrate processing apparatus and the type of chemical used in the substrate processing apparatus, the outer peripheral surface 411b of one cup portion 41, as in the substrate processing apparatus 1 in FIG. 1 and the substrate processing apparatus 1b in FIG. Alternatively, water is applied only to the outer peripheral surface 451b of the outermost cup portion 45 among the concentric cup portions 42 to 45, that is, the surface to which the chemical solution scattered from the substrate 9 does not adhere during the substrate processing using the chemical solution. It may be preferable to form the layers 71 and 75b from the viewpoint of not affecting the process. Therefore, in order to easily suppress the charging potential of the cup portions 41 to 45 without affecting the process, the outer peripheral surfaces 411b and 451b of the outermost cup portions 41 and 45 located on the outermost side among at least one cup portion. It is preferable that a liquid containing water is retained.

  FIG. 21 is a diagram showing another example of the substrate processing apparatus 1b. The substrate processing apparatus 1b shown in FIG. 21 is configured such that only the outer peripheral surface 451b of the peripheral wall portion 451 of the outermost cup portion 45A is the surface of the conductive resin film 47 in the cup portions 42A to 45A shown in FIG. The inner peripheral surface 451a of the outer cup portion 45A, and the inner peripheral surfaces 421a, 431a, and 441a and the outer peripheral surfaces 421b, 431b, and 441b of the other cup portions 42A to 44A are kept on the surface of the insulating material and have water repellency. Have. In the substrate processing apparatus 1b of FIG. 21 as well, the pure water splashing from the substrate 9 causes frictional charging on the inner peripheral surface 421a of the cup portion 42A in which the entire peripheral wall portion 421 is formed of an insulating material. The charging potential of the inner cup portion 42A can be suppressed to some extent by the cup portion 45A, and thus it is possible to prevent the discharge from occurring on the substrate 9.

  Further, in the substrate processing apparatuses 1 and 1b of FIGS. 6 and 21, only the outer peripheral surface of the cup part (outermost cup part) includes the surface of a member having a smaller specific resistance than the main body of the cup part, and the substrate processing of FIG. In the apparatus 1a, the inner peripheral surface and the outer peripheral surface of the cup part include the surface of a member having a specific resistance smaller than that of the main body of the cup part. In the substrate processing apparatus, only the inner peripheral surface of the cup part has a specific resistance higher than that of the main body. It is also possible to suppress the charging potential of the cup portion by including the surface of a small member. That is, in order to suppress the charging potential of the cup portion that is charged by scattering of pure water, at least one of the inner peripheral surface and the outer peripheral surface of the cup portion includes the surface of a member having a specific resistance smaller than that of the cup portion main body. It will be necessary.

  FIG. 22 is a diagram showing still another example of the substrate processing apparatus 1b. Compared to the substrate processing apparatus 1a of FIG. 19, the substrate processing apparatus 1b of FIG. 22 is provided with a plurality of rod-shaped conductive members 47c (shown by bold lines in FIG. 22) only in the outermost cup portion 45B. In other respects, the other configurations are the same. In the substrate processing apparatus 1b of FIG. 22, the charging potential of the inner cup portion 42B generated by pure water splashing from the substrate 9 can be suppressed to some extent by the outermost cup portion 45B. Can be prevented from occurring.

  FIG. 23 is a diagram showing still another example of the substrate processing apparatus 1b. In the substrate processing apparatus 1b of FIG. 23, a gap is formed around the peripheral wall 451b of the outermost cup portion 45C, following the outer peripheral surface 451b and with the outer peripheral surface 451b, as in the substrate processing apparatus 1 of FIG. A substantially cylindrical cylindrical member 81a is provided. The cylindrical member 81a is connected to the grounding part 61 and grounded. Also in the substrate processing apparatus 1b having the plurality of cup portions 42C to 45C, the conductive cylindrical member 81a is provided close to the outer peripheral surface 451b of the outermost cup portion 45C, as in the substrate processing apparatus 1 of FIG. As a result, the charging potential of the inner cup portion 42 </ b> C caused by pure water splashing from the substrate 9 is suppressed to some extent, and discharge is prevented from occurring on the substrate 9.

  As described above, in the substrate processing apparatus, the outer peripheral surfaces 411b and 451b of the outermost cup portions 41C and 45C located on the outermost side of at least one cup portion have a smaller specific resistance than the outermost cup portions 41C and 45C. By providing the cylindrical members close to each other, it becomes possible to suppress the charging potential of the cup portion without changing the structure of the cup portion.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made.

  As described above, in the substrate processing apparatus, a liquid containing water is held on at least one of the inner peripheral surface and the outer peripheral surface of the cup portion, or at least one of the inner peripheral surface and the outer peripheral surface of the cup portion. By including the surface of the member whose specific resistance is smaller than that of the cup body, it is possible to suppress the charging potential of the cup part, but it is necessary to ensure a certain drainage performance by making the inner peripheral surface water repellent. 1, the cup portion 41 in FIG. 4, the cup portion 41 </ b> A in FIG. 6, the outermost cup portion 45 in FIG. 20, and the outermost cup portion 45 </ b> A in FIG. 21. It is preferable that only the liquid containing water is held, or the surface of a member having a specific resistance smaller than that of the main body is included only on the outer peripheral surface. On the other hand, the pure water scattered from the substrate 9 usually causes frictional charging with the inner peripheral surface of the cup portion, so that a liquid containing water is held at least on the inner peripheral surface, or By including the surface of a member having a small specific resistance on at least the inner peripheral surface, it is possible to reduce the charge amount of the cup portion and further suppress the charged potential of the cup portion.

  In the substrate processing apparatuses 1, 1a, and 1b of FIGS. 1, 4, 5, 13, and 20, water is applied to the inner peripheral surface or the outer peripheral surface of the cup portion by the processing liquid discharged from the processing liquid supply units 3 and 3a. For example, as in the cup portion 41 shown in FIG. 24, an annular supply pipe 481 is provided as a liquid application portion around the upper end of the peripheral wall portion 411. A liquid having conductivity and containing water may be applied to the outer peripheral surface 411b of the peripheral wall portion 411 from the plurality of holes 482 to be formed. In the cup portion 41 of FIG. 24, a substantially cylindrical auxiliary member 483 (in FIG. 24) that follows the outer peripheral surface 411b and forms a minute gap with the outer peripheral surface 411b around the peripheral wall portion 411. A parallel oblique line in the cross section is not shown), and the liquid applied from the supply pipe 481 can be held between the outer peripheral surface 411b of the peripheral wall portion 411 and the auxiliary member 483. In addition, when a liquid application unit that continuously supplies liquid is provided as in the cup unit 41 of FIG. 24, for example, by forming a plurality of grooves on the outer peripheral surface of the cup unit, Then, a surface layer in which pure water or the like is substantially retained and conductivity is generated may be formed.

  The technique using the fiber material 46 or the mesh member in the cup part 41 of FIG. 4 may be employed in the substrate processing apparatuses 1a and 1b of FIG. 13 or 20 having a plurality of cup parts 42 to 45.

  As described above, in the processing of the substrate 9 in the substrate processing apparatus, it is required to prevent metal impurities from adhering to the substrate 9, and therefore it is usually not possible to use metal inside or on the surface of the cup portion. However, depending on the design of the cup part, the type of the substrate to be processed, and the like, an annular member formed of a metal that is difficult to elute (for example, gold or platinum) is used instead of the sealing liquid 47b in FIG. The conductive member 47c shown in FIGS. 11, 19, and 22 may be formed of the metal. In order to reliably prevent the elution of the metal in the cup portion, the conductive member is preferably formed of a non-metallic material.

  In the cup portion 41A of FIG. 8, the four conductive members 47a are arranged at equal intervals in the circumferential direction of the peripheral wall portion 411. From the viewpoint of suppressing the charging potential almost all around the cup portion 41A, The surface is included in the inner peripheral surface 411a or the outer peripheral surface 411b of the peripheral wall portion 411, and members having a specific resistance smaller than that of the main body of the cup portion 41A are arranged at equal intervals in the circumferential direction of the cup portion 41A. It is important to be provided as a set of element members. Similarly, in the cup portion 41B of FIG. 11, four conductive members 47c are arranged at equal intervals in the circumferential direction of the peripheral wall portion 411. To suppress the charging potential on almost the entire circumference of the cup portion 41B. In addition, a portion having a specific resistance smaller than that of the main body of the cup portion 41B is provided as a set of three or more element portions arranged at equal intervals in the circumferential direction of the peripheral wall portion 411. Is important.

  In the first to third embodiments, the pure water and the chemical liquid are supplied onto the substrate 9 from the processing liquid supply units 3 and 3a. However, even if the apparatus supplies only pure water as described above. In addition, a discharge may occur on the substrate with water remaining on the substrate. Therefore, when the substrate processing apparatus has a processing liquid supply unit that supplies at least pure water as a processing liquid onto the substrate, the above method is used to suppress the charging potential of the cup part and prevent the occurrence of discharge on the substrate. It is important to be able to

  1, 4, 13, and 20, the substrate 9 is held so that the normal direction of the substrate 9 is directed in the vertical direction, and the upper end of the cup portion is more than the substrate 9. Also, the outer periphery of the outermost cup part (if only one cup part is provided) during the processing of the substrate 9 by washing the substrate 9 with pure water in the state of being disposed below A layer of water is easily formed by efficiently applying pure water to the surface, but when there is no need to apply pure water to the outer peripheral surface of the outermost cup portion, the normal direction of the substrate 9 is It does not necessarily have to face up and down. Further, the application of pure water to the outer peripheral surface of the outermost cup portion does not necessarily have to be performed at the time of processing all the substrates 9, and may be performed only at the time of processing the predetermined number of substrates 9.

  In the substrate processing apparatuses 1, 1a, 1b, the processing liquid splashed from the rotating substrate 9 by the substrate holding unit 2 is received by the cup unit. For example, the rotation mechanism is omitted from the substrate holding unit, and the substrate holding unit After pure water is supplied onto the substrate 9 to be held, pure water scattered from the substrate 9 may be received by the cup portion by an air knife provided separately. Even in this case, since the cup portion is charged by the scattered pure water, it is necessary to use the above method for suppressing the charging potential of the cup portion.

  In the above embodiment, the cup portion is moved up and down with respect to the substrate 9 by the elevating mechanism 5. That is, the cup part may be moved up and down relative to the substrate holding part 2.

  The cup portion (the main body) of FIGS. 6 to 12, 18, 19, and 21 to 23 is not necessarily formed of an insulating material. A cup portion including a surface of a member having a specific resistance smaller than that of the main body, at least one of the inner peripheral surface and the outer peripheral surface, and a cup portion having a portion having a specific resistance lower than that of the main body, the main body is the member, Alternatively, it may be formed of a semiconductive material having a higher specific resistance (for example, 2 MΩ · cm or more) than the part. In this case, the charged potential of the cup part is suppressed by the member or the part. It is possible to reduce induction charging of the substrate 9. Similarly, one cup portion or a plurality of cup portions in which the cylindrical member is provided close to the outer peripheral surface of the outermost cup portion may also be formed of a semiconductive material having a higher specific resistance than the cylindrical member. .

  The processing target in the substrate processing apparatus may be a substrate such as a glass substrate in addition to the semiconductor substrate.

It is a figure which shows the structure of the substrate processing apparatus which concerns on 1st Embodiment. It is a figure which shows the flow of operation | movement which a substrate processing apparatus processes a board | substrate. It is a figure for demonstrating the operation | movement which provides a pure water to the outer peripheral surface of a cup part. It is a figure which shows the other example of a substrate processing apparatus. It is a figure which shows the further another example of a substrate processing apparatus. It is a figure which shows the further another example of a substrate processing apparatus. It is a figure which shows the further another example of a substrate processing apparatus. It is sectional drawing of a cup part. It is a figure which shows the further another example of a substrate processing apparatus. It is sectional drawing of a cup part. It is a figure which shows the other example of a cup part. It is a figure which shows the further another example of a substrate processing apparatus. It is a figure which shows the structure of the substrate processing apparatus which concerns on 2nd Embodiment. It is a figure which shows a part of flow of operation | movement which a substrate processing apparatus processes a board | substrate. It is a figure for demonstrating the basic operation | movement of a substrate processing apparatus. It is a figure for demonstrating the basic operation | movement of a substrate processing apparatus. It is a figure for demonstrating the basic operation | movement of a substrate processing apparatus. It is a figure which shows the other example of a substrate processing apparatus. It is a figure which shows the further another example of a substrate processing apparatus. It is a figure which shows the structure of the substrate processing apparatus which concerns on 3rd Embodiment. It is a figure which shows the other example of a substrate processing apparatus. It is a figure which shows the further another example of a substrate processing apparatus. It is a figure which shows the further another example of a substrate processing apparatus. It is a figure which shows the further another example of a substrate processing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 1a, 1b Substrate processing apparatus 2 Substrate holding part 3, 3a Process liquid supply part 5 Lifting mechanism 9 Substrate 41-45, 41A-41C, 42A-42C, 43A-43C, 44A-44C, 45A-45C Cup part 46 Fiber material 47 Conductive resin film 47a, 47c Conductive member 47b Filled liquid 61 Grounding portion 71, 72a, 73a, 74a, 75a, 72b, 73b, 74b, 75b Layer 81, 81a Cylindrical member 411, 421, 431, 441, 451 Peripheral walls 411a, 421a, 431a, 441a, 451a Inner peripheral surface 411b, 421b, 431b, 441b, 451b Outer peripheral surface S10, S12-S14, S131-S135 Steps

Claims (36)

A substrate processing apparatus for processing a substrate by supplying a processing liquid to the substrate,
A holding unit for holding the substrate;
A processing liquid supply unit that supplies at least pure water onto the substrate as a processing liquid;
The main body is formed of an insulating material or a semiconductive material, and has a peripheral wall portion that surrounds the periphery of the holding portion and receives the processing liquid scattered from the substrate, and the peripheral wall portion is more than a material that forms the main body inside. A cup portion having a portion having a small specific resistance;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the portion having a small specific resistance is provided on the entire circumference of the peripheral wall portion. The substrate processing apparatus according to claim 1,
The substrate processing apparatus characterized in that the part having a small specific resistance is a set of three or more element parts arranged at equal intervals in the circumferential direction of the peripheral wall portion. A substrate processing apparatus according to any one of claims 1 to 3,
The substrate processing apparatus, wherein the portion having a small specific resistance is a conductive resin or a conductive carbon. A substrate processing apparatus according to any one of claims 1 to 3,
The substrate processing apparatus, wherein the specific resistance portion is a liquid held inside the peripheral wall portion. A substrate processing apparatus according to any one of claims 1 to 5,
It has the same structure as the cup part, and further comprises another cup part disposed inside the cup part and at a position farther from the processing liquid supply part than the cup part,
The substrate processing apparatus, wherein the cup part and the another cup part are movable relative to the holding part in a normal direction of the substrate. A substrate processing apparatus according to any one of claims 1 to 5,
The entire peripheral wall portion is formed of an insulating material or a semiconductive material, and further includes another cup portion disposed inside the cup portion and at a position farther from the processing liquid supply portion than the cup portion,
The substrate processing apparatus, wherein the cup part and the another cup part are movable relative to the holding part in a normal direction of the substrate. A substrate processing apparatus according to any one of claims 1 to 7,
A substrate processing apparatus, further comprising a grounding portion for electrically grounding a portion having a small specific resistance. A substrate processing apparatus for processing a substrate by supplying a processing liquid to the substrate,
A holding unit for holding the substrate;
A processing liquid supply unit that supplies at least pure water onto the substrate as a processing liquid;
The main body is formed of an insulating material or a semiconductive material, receives the processing liquid that surrounds the holding portion and scatters from the substrate, and at least one of the inner peripheral surface and the outer peripheral surface has a specific resistance higher than that of the main body. A cup part including the surface of a small member,
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 9, comprising:
The substrate processing apparatus, wherein the member having a small specific resistance is provided on the entire circumference of the cup portion. The substrate processing apparatus according to claim 10, comprising:
The substrate processing apparatus, wherein the member having a small specific resistance is a conductive resin film. The substrate processing apparatus according to claim 9, comprising:
The substrate processing apparatus, wherein the member having a small specific resistance is a set of three or more element members arranged at equal intervals in the circumferential direction of the cup portion. A substrate processing apparatus according to any one of claims 9 to 12,
A substrate processing apparatus, further comprising a grounding portion for electrically grounding the member having a small specific resistance. A substrate processing apparatus for processing a substrate by supplying a processing liquid to the substrate,
A holding unit for holding the substrate;
A processing liquid supply unit that supplies at least pure water onto the substrate as a processing liquid;
A cup portion that is formed of an insulating material, receives a processing liquid that surrounds the periphery of the holding portion and scatters from the substrate, and holds a liquid containing water on at least one of the inner peripheral surface and the outer peripheral surface;
A grounding portion that substantially electrically grounds the liquid containing water in a state where the liquid containing water is held on the at least one surface;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 14, comprising:
A substrate processing apparatus, wherein the at least one surface of the cup portion is subjected to a hydrophilic treatment. The substrate processing apparatus according to claim 14, comprising:
The substrate processing apparatus, wherein the cup portion has a fiber material or a mesh member on the at least one surface. The substrate processing apparatus according to any one of claims 14 to 16, comprising:
The normal line of the substrate is directed in the vertical direction, and the cup part is raised and lowered relative to the holding part by an elevating mechanism,
The at least one surface includes the outer peripheral surface;
When pure water is discharged from the processing liquid supply unit, the elevating mechanism disposes the upper end of the cup unit below the substrate, so that pure water splashing from the substrate is applied to the outer peripheral surface. A substrate processing apparatus. A substrate processing apparatus according to any one of claims 9 to 17,
The substrate processing apparatus, wherein the at least one surface includes the inner peripheral surface. A substrate processing apparatus according to any one of claims 9 to 17,
The substrate processing apparatus, wherein the at least one surface is only the outer peripheral surface, and the inner peripheral surface has water repellency. A substrate processing apparatus according to any one of claims 9 to 19,
The cup portion is made of the same material, and at least one of the inner peripheral surface and the outer peripheral surface is the same as the at least one surface of the inner peripheral surface and the outer peripheral surface of the cup portion, and the cup Further comprising another cup portion disposed inside the portion and at a position farther from the processing liquid supply unit than the cup portion,
The substrate processing apparatus, wherein the cup part and the another cup part are movable relative to the holding part in a normal direction of the substrate. A substrate processing apparatus according to any one of claims 9 to 19,
It is formed of the same material as that of the cup part, and the inner peripheral surface and the outer peripheral surface are the surfaces of the material, and are disposed at a position inside the cup part and further away from the processing liquid supply part than the cup part. It is further equipped with another cup part,
The substrate processing apparatus, wherein the cup part and the another cup part are movable relative to the holding part in a normal direction of the substrate. A substrate processing apparatus for processing a substrate by supplying a processing liquid to the substrate,
A holding unit for holding the substrate;
A processing liquid supply unit that supplies at least pure water onto the substrate as a processing liquid;
Each of which is made of an insulating material, and at least one cup portion that surrounds the periphery of the holding portion and receives the processing liquid scattered from the substrate;
With
A substrate processing apparatus, wherein a liquid containing water is held on an outer peripheral surface of an outermost cup portion located on the outermost side of the at least one cup portion. The substrate processing apparatus according to claim 22, wherein
The substrate processing apparatus further comprising: a grounding unit that substantially electrically grounds the liquid containing water while the liquid containing water is held on the outer peripheral surface of the outermost cup part. . The substrate processing apparatus according to claim 22 or 23,
A substrate processing apparatus, wherein the outer peripheral surface of the outermost cup portion is subjected to a hydrophilic treatment. The substrate processing apparatus according to claim 22 or 23,
The substrate processing apparatus, wherein the outermost cup portion has a fiber material or a mesh member on the outer peripheral surface. The substrate processing apparatus according to any one of claims 22 to 25,
The normal line of the substrate is directed in the vertical direction, and the at least one cup portion is moved up and down relatively with respect to the holding portion by a lifting mechanism,
When the deionized water is discharged from the processing liquid supply unit, the elevating mechanism disposes the upper end of the at least one cup unit below the substrate, so that the deionized water scattered from the substrate is the outer peripheral surface. A substrate processing apparatus, which is applied to the substrate. A substrate processing apparatus for processing a substrate by supplying a processing liquid to the substrate,
A holding unit for holding the substrate;
A processing liquid supply unit that supplies at least pure water onto the substrate as a processing liquid;
Each of which is formed of an insulating material or a semiconductive material, and at least one cup portion that surrounds the periphery of the holding portion and receives the processing liquid scattered from the substrate;
A cylindrical member having a specific resistance smaller than that of the outermost cup part, provided close to the outer peripheral surface of the outermost cup part located on the outermost side of the at least one cup part;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 27, wherein
The substrate processing apparatus, wherein the cylindrical member is made of metal. A holding unit that holds the substrate, a processing liquid supply unit that supplies at least pure water as a processing liquid onto the substrate, and a processing liquid that is formed of an insulating material and that surrounds the holding unit and scatters from the substrate. In a substrate processing apparatus comprising a cup portion for receiving, a substrate processing method for processing the substrate,
a) applying a liquid containing water to at least one of the inner peripheral surface and the outer peripheral surface of the cup portion to hold the liquid containing water on the at least one surface;
b) supplying a processing liquid onto the substrate from the processing liquid supply unit;
With
A substrate processing method, wherein the water-containing liquid is substantially electrically grounded while the water-containing liquid is held on the at least one surface. A substrate processing method according to claim 29, wherein
A substrate processing method, wherein the at least one surface of the cup portion is subjected to a hydrophilic treatment. A substrate processing method according to claim 29, wherein
The substrate processing method, wherein the cup portion has a fiber material or a mesh member on the at least one surface. 32. The substrate processing method according to claim 29, wherein:
The normal line of the substrate is directed in the vertical direction, and the cup part is raised and lowered relative to the holding part by an elevating mechanism,
The at least one surface includes the outer peripheral surface;
The step a) is performed while the preceding substrate to be processed before the substrate is held by the holding unit, and in the step a) while discharging pure water from the processing liquid supply unit. The substrate processing method is characterized in that pure water splashing from the preceding substrate is provided to the outer peripheral surface by disposing an upper end portion of the cup portion below the preceding substrate. A holding unit that holds the substrate, and a processing liquid supply unit that supplies at least pure water onto the substrate as a processing liquid, each of which is formed of an insulating material, and scatters from the substrate surrounding the holding unit. In a substrate processing apparatus comprising at least one cup unit for receiving a processing liquid to be processed, a substrate processing method for processing the substrate,
a) applying a liquid containing water to the outer peripheral surface of the outermost cup part located on the outermost side of the at least one cup part, and holding the liquid containing water on the outer peripheral surface;
b) supplying a processing liquid onto the substrate from the processing liquid supply unit;
A substrate processing method comprising: A substrate processing method according to claim 33, wherein
A substrate processing method, wherein the outer peripheral surface of the outermost cup portion is subjected to a hydrophilic treatment. A substrate processing method according to claim 33, wherein
The substrate processing method, wherein the outermost cup portion has a fiber material or a mesh member on the outer peripheral surface. 36. The substrate processing method according to any one of claims 33 to 35, wherein:
The normal line of the substrate is directed in the vertical direction, and the at least one cup portion is moved up and down relatively with respect to the holding portion by a lifting mechanism,
The step a) is performed while the preceding substrate to be processed before the substrate is held by the holding unit, and in the step a) while discharging pure water from the processing liquid supply unit. The substrate processing method is characterized in that pure water splashing from the preceding substrate is provided to the outer peripheral surface by disposing an upper end portion of the at least one cup portion below the preceding substrate.

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