JP2008079328A5 - - Google Patents
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- JP2008079328A5 JP2008079328A5 JP2007265981A JP2007265981A JP2008079328A5 JP 2008079328 A5 JP2008079328 A5 JP 2008079328A5 JP 2007265981 A JP2007265981 A JP 2007265981A JP 2007265981 A JP2007265981 A JP 2007265981A JP 2008079328 A5 JP2008079328 A5 JP 2008079328A5
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- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric thin
- layer
- ruthenium
- aluminum
- Prior art date
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- 239000010409 thin film Substances 0.000 claims 22
- 239000010949 copper Substances 0.000 claims 16
- 239000011651 chromium Substances 0.000 claims 15
- 229910052782 aluminium Inorganic materials 0.000 claims 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 8
- 229910052802 copper Inorganic materials 0.000 claims 8
- 229910000929 Ru alloy Inorganic materials 0.000 claims 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 7
- 229910052804 chromium Inorganic materials 0.000 claims 7
- 239000005092 Ruthenium Substances 0.000 claims 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 6
- 229910052707 ruthenium Inorganic materials 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 239000010408 film Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 229910000599 Cr alloy Inorganic materials 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims 1
- 239000011800 void material Substances 0.000 claims 1
Claims (9)
前記圧電薄膜が窒化アルミニウムで形成され、
前記上部電極及び下部電極はそれぞれルテニウム又はルテニウム合金の層を含み、
前記下部電極には、その下に形成された空隙に全体が露出しているとともに、アルミニウム（Ａｌ），銅（Ｃｕ）若しくはクロム（Ｃｒ）の純金属、又はアルミニウム（Ａｌ），銅（Ｃｕ）若しくはクロム（Ｃｒ）の合金、又はアルミニウム（Ａｌ），銅（Ｃｕ）若しくはクロム（Ｃｒ）の酸化物、又はアルミニウム（Ａｌ），銅（Ｃｕ）若しくはクロム（Ｃｒ）の窒化物による薄膜層が形成されており、前記下部電極は前記空隙に露出していないことを特徴とする圧電薄膜共振子。 A piezoelectric thin film resonator having a piezoelectric thin film formed on a first surface of a substrate, and a lower electrode and an upper electrode formed so as to sandwich the piezoelectric thin film,
The piezoelectric thin film is formed of aluminum nitride;
Each of the upper and lower electrodes includes a layer of ruthenium or ruthenium alloy,
The lower electrode is entirely exposed in the gap formed thereunder, and is pure metal of aluminum (Al), copper (Cu) or chromium (Cr), or aluminum (Al), copper (Cu). Alternatively, a thin film layer is formed of an alloy of chromium (Cr), an oxide of aluminum (Al), copper (Cu) or chromium (Cr), or a nitride of aluminum (Al), copper (Cu) or chromium (Cr). The piezoelectric thin film resonator is characterized in that the lower electrode is not exposed to the gap .
前記第１の工程は、アルミニウム（Ａｌ），銅（Ｃｕ）若しくはクロム（Ｃｒ）の純金属、又はアルミニウム（Ａｌ），銅（Ｃｕ）若しくはクロム（Ｃｒ）の合金、又はアルミニウム（Ａｌ），銅（Ｃｕ）若しくはクロム（Ｃｒ）の酸化物、又はアルミニウム（Ａｌ），銅（Ｃｕ）若しくはクロム（Ｃｒ）の窒化物による薄膜層と、該薄膜層上にルテニウム又はルテニウム合金の層を含む前記下部電極を形成する工程を含み、
前記第３の工程は、ルテニウム又はルテニウム合金の層を含む前記上部電極を形成する工程を含み、
前記製造方法は更に、前記下部電極の下に設けられた前記薄膜層全体が露出する空隙を形成する工程を含むことを特徴とする圧電薄膜共振子の製造方法。 A first step of forming a lower electrode on the substrate; a second step of forming a piezoelectric thin film of aluminum nitride on the substrate so as to cover the lower electrode; and a second step of forming an upper electrode on the piezoelectric thin film. A method of manufacturing a piezoelectric thin film resonator having three steps,
The first step is a pure metal of aluminum (Al), copper (Cu) or chromium (Cr), an alloy of aluminum (Al), copper (Cu) or chromium (Cr), or aluminum (Al), copper The lower part including a thin film layer made of an oxide of (Cu) or chromium (Cr) or a nitride of aluminum (Al), copper (Cu) or chromium (Cr), and a layer of ruthenium or a ruthenium alloy on the thin film layer Forming an electrode,
The third step includes forming the upper electrode including a layer of ruthenium or a ruthenium alloy,
The method for manufacturing a piezoelectric thin film resonator further includes a step of forming a void in which the entire thin film layer provided under the lower electrode is exposed.
前記第２の工程は、（００２）方向を主軸とする配向性を有する前記窒化アルミニウムの層を形成する工程を含むことを特徴とする請求項６記載の圧電薄膜共振子の製造方法。 The first step includes a step of forming a layer of the ruthenium or ruthenium alloy having orientation with a (002) direction as a main axis,
7. The method of manufacturing a piezoelectric thin film resonator according to claim 6, wherein the second step includes a step of forming the aluminum nitride layer having an orientation with a (002) direction as a main axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007265981A JP2008079328A (en) | 2007-10-12 | 2007-10-12 | Piezoelectric thin film resonator and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007265981A JP2008079328A (en) | 2007-10-12 | 2007-10-12 | Piezoelectric thin film resonator and its manufacturing method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003303707A Division JP2005073175A (en) | 2003-08-27 | 2003-08-27 | Piezoelectric thin film resonator, and its manufacturing method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011066820A Division JP5204258B2 (en) | 2011-03-24 | 2011-03-24 | Method for manufacturing piezoelectric thin film resonator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008079328A JP2008079328A (en) | 2008-04-03 |
| JP2008079328A5 true JP2008079328A5 (en) | 2009-07-09 |
Family
ID=39350831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007265981A Pending JP2008079328A (en) | 2007-10-12 | 2007-10-12 | Piezoelectric thin film resonator and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008079328A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5322597B2 (en) * | 2008-11-13 | 2013-10-23 | 太陽誘電株式会社 | Resonator, filter, duplexer and electronic device |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3672115B2 (en) * | 1995-09-19 | 2005-07-13 | 富士通株式会社 | Thin film forming method and semiconductor device manufacturing method |
| JP3489343B2 (en) * | 1996-07-30 | 2004-01-19 | 松下電工株式会社 | Method for manufacturing semiconductor device |
| KR100765682B1 (en) * | 1998-06-19 | 2007-10-11 | 가부시키가이샤 히타치세이사쿠쇼 | Semiconductor device and production method thereof |
| JP2000357931A (en) * | 1999-06-16 | 2000-12-26 | Victor Co Of Japan Ltd | Manufacture of composite piezoelectric oscillator |
| JP2001111136A (en) * | 1999-10-08 | 2001-04-20 | Fujitsu Ltd | Direction-of-magnetization controlled film and magnetoresistance effect-type sensor using the same |
| JP2001168675A (en) * | 1999-12-08 | 2001-06-22 | Mitsubishi Electric Corp | Piezoelectric resonator, piezoelectric oscillator using this and method for manufacturing piezoelectric resonator |
| JP2001250995A (en) * | 2000-03-07 | 2001-09-14 | Mitsubishi Electric Corp | Piezoelectric thin-film element |
| JP2001251159A (en) * | 2000-03-08 | 2001-09-14 | Mitsubishi Electric Corp | Thin film piezoelectric element and its manufacturing method |
| US6472954B1 (en) * | 2001-04-23 | 2002-10-29 | Agilent Technologies, Inc. | Controlled effective coupling coefficients for film bulk acoustic resonators |
| JP2003046160A (en) * | 2001-04-26 | 2003-02-14 | Matsushita Electric Ind Co Ltd | Piezoelectric element, actuator, and ink jet head |
| JP3953315B2 (en) * | 2001-12-26 | 2007-08-08 | 宇部興産株式会社 | Aluminum nitride thin film-metal electrode laminate and thin film piezoelectric resonator using the same |
| JP3954395B2 (en) * | 2001-10-26 | 2007-08-08 | 富士通株式会社 | Piezoelectric thin film resonator, filter, and method of manufacturing piezoelectric thin film resonator |
| JP2005073175A (en) * | 2003-08-27 | 2005-03-17 | Fujitsu Media Device Kk | Piezoelectric thin film resonator, and its manufacturing method |
-
2007
- 2007-10-12 JP JP2007265981A patent/JP2008079328A/en active Pending
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