JP2008078460A - Semiconductor light emitting element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a zinc oxide-based semiconductor light emitting element which has superior external quantum efficiency. <P>SOLUTION: The semiconductor light emitting element 10 having a zinc oxide (ZnO)-based semiconductor crystal layer 13 with a light emitting layer on a substrate 11 made of (ZnO) is provided with a reflective layer 12 which reflects light emitted by the light emitting layer between the substrate 11 and light emitting layer. Light emitted to the ZnO substrate from the ZnO-based semiconductor crystal layer 13 can be reflected for discharge to the outside of the element, so the external quantum efficiency of the light emitting element can be improved. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device such as a light emitting diode and a semiconductor laser, and more particularly to a semiconductor light emitting device including a light emitting layer composed of a zinc oxide based semiconductor crystal.

A zinc oxide (ZnO) -based semiconductor crystal has attracted attention as a new crystal material that can replace a group III-V nitride semiconductor crystal used for a blue light-emitting element or an ultraviolet light-emitting element.
Here, the light emitting element includes a light emitting diode (Light Emitting Diode: LED), a laser diode (Laser Diode: LD), and an element applying these basic principles.
In addition, the zinc oxide based semiconductor crystal includes crystals based on ZnO such as zinc oxide (non-doped ZnO), zinc magnesium oxide (ZnMgO), and zinc cadmium oxide (ZnCdO).

  In order to realize a blue light emitting element or an ultraviolet light emitting element by using a ZnO based semiconductor crystal, the ZnO based semiconductor crystal is required to have a high crystal quality and a very flat crystal surface. Conventionally, a ZnO-based semiconductor crystal is generally grown on a sapphire substrate or a silicon substrate. However, a large lattice mismatch exists between the substrate to be used and the ZnO-based semiconductor crystal. It was difficult to obtain crystal quality and a flat crystal surface. In addition, this lattice mismatch has become a cause, and it has been difficult to grow a ZnO-based semiconductor crystal exhibiting p-type conductivity. That is, it has been extremely difficult to produce a ZnO-based semiconductor light emitting element on a sapphire substrate or a silicon substrate.

  However, in recent years, a technology has been established that can produce a high-quality ZnO substrate by a hydrothermal synthesis method or a chemical vapor transport method. When a ZnO-based semiconductor crystal is grown on this ZnO substrate, an extremely high crystal quality and a flat crystal can be obtained. I began to see that a surface was obtained. It has also begun to be understood that if this ZnO substrate is used, a ZnO-based semiconductor crystal exhibiting p-type conductivity can be obtained relatively easily by doping nitrogen (N) as an acceptor impurity.

The structure of the light-emitting element described in Non-Patent Document 1 is shown in FIG. In the semiconductor light emitting device 50 shown in FIG. 7, a ZnO-based semiconductor crystal layer 52 doped with N is grown on a ZnO substrate 51 exhibiting n-type conductivity to form a pn junction. Ultraviolet light emission is obtained by passing a forward current through the metal electrodes 53 and 54.
FIG. 8 shows a structure of the light-emitting element described in Patent Document 1. The semiconductor light emitting device 60 shown in FIG. 8 has a double heterogeneous structure in which ZnMgO as an n-type cladding layer 62, ZnO as a light-emitting layer 63, and ZnMgO as a p-type cladding layer 64 are sequentially stacked on a ZnO substrate 61 having n-type conductivity. A structure is formed, and a forward current is passed through the metal electrodes 65 and 66 to obtain ultraviolet light emission.

In addition, in order to realize the light emitting element, for example, as shown in FIG. 9, the light emitting layer 73 is composed of a mixed crystal such as ZnMgO or ZnCdO, or the light emitting layer 83 is made of ZnO / ZnMgO as shown in FIG. It is also conceivable to form such quantum wells.
In the semiconductor light emitting device 70 of FIG. 9, ZnO is sequentially stacked on a ZnO substrate 71 as an n-type cladding layer 72, ZnCdO as a light-emitting layer 73, ZnO as a p-type cladding layer 74, and metal electrodes 75 and 76 are further provided. Or Zn _1-y Mg _y O as the n-type cladding layer 72, Zn _1-x Mg _x O as the light emitting layer 73, and Zn _1-y Mg _y O as the p-type cladding layer 74 on the ZnO substrate 71. The layers are sequentially stacked (x and y indicate the ZnMgO mixed crystal ratio, x <y), and metal electrodes 75 and 76 are further provided.
In the semiconductor light emitting device 80 of FIG. 10, ZnMgO as an n-type cladding layer 82, ZnO / ZnMgO quantum well as a light emitting layer 83, ZnMgO as a p-type cladding layer 84 are sequentially stacked on a ZnO substrate 81. 86 is provided.
Iwate Nipposha, “Zinc Oxide LED Development Iwate University Group”, [online], October 13, 2005 [Search August 7, 2006], Internet <URL: http: //www.iwate-np .co.jp / news / y2005 / m10 / d13 / NippoNews_12.html> JP 2004-95634 A

However, in these ZnO-based semiconductor light emitting devices, in particular, a part of light emitted from a crystal having a band gap energy equivalent to or larger than that of the ZnO substrate is absorbed by the ZnO substrate. As a result, there is a problem that the amount of light emitted to the outside of the device is reduced, that is, the external quantum efficiency is greatly reduced.
Here, radiation means that electric power input to the element is converted into light inside the element, and emission means that light emitted inside the element is extracted outside the element.
The external quantum efficiency means the efficiency of light energy extracted outside the device with respect to the power energy input to the device.
For example, in the case of the light emitting element 50 shown in FIG. 7, the light emitted from the pn junction (indicated by arrows in FIG. 11) is emitted in all directions, and part of the light reaches the ZnO substrate 51. The light that reaches the ZnO substrate is absorbed by the ZnO substrate with a certain absorption rate (see FIG. 11). Therefore, the external quantum efficiency of the light emitting element is lowered.

  This invention is made | formed in view of the said situation, and makes it a subject to provide the zinc oxide type semiconductor light-emitting device excellent in the external quantum efficiency.

In order to solve the above-mentioned problems, the present invention provides a semiconductor light-emitting device comprising a light-emitting layer made of a zinc oxide-based semiconductor crystal on a substrate made of zinc oxide, and emitting light between the substrate and the light-emitting layer. Provided is a semiconductor light emitting element characterized in that a reflective layer for reflecting light emitted from the layer is provided.
The reflective layer provided between the substrate and the light emitting layer is preferably a laminate of one or more periodic layers of zinc oxide and zinc magnesium oxide.
It is preferable that the reflective layer provided between the substrate and the light emitting layer exhibits n-type conductivity.
The light emitting layer preferably emits light having a wavelength of 370 nm or less.
It is preferable that at least a part of the light emitting layer is made of zinc oxide or zinc magnesium oxide.

The reflective layer provided between the substrate and the light emitting layer is used as a first reflective layer, and a second reflective layer is provided on the side of the light emitting layer opposite to the substrate, and the first reflective layer and the first reflective layer are formed. A resonator is constituted by the two reflective layers, and at least a part of the light emitted from the light emitting layer is resonated by the first reflective layer and the second reflective layer and emitted to the outside of the light emitting element. It is preferable to be configured.
The first reflective layer and the second reflective layer emit light resonated between the first reflective layer and the second reflective layer to the outside of the light emitting element in a state where an inversion distribution is generated. It is preferable that
The second reflective layer is preferably formed by laminating one or more periodic layers of zinc oxide and zinc magnesium oxide.
The second reflective layer preferably has p-type conductivity.

According to the semiconductor light emitting device of the present invention, since the light emitted from the ZnO-based semiconductor crystal toward the ZnO substrate can be reflected and emitted to the outside of the device, the external quantum efficiency of the light emitting device can be improved. .
When the reflective layer provided between the substrate and the light emitting layer is composed of a distributed Bragg reflection type mirror in which one or more periodic layers of ZnO and ZnMgO are stacked, there is almost no lattice mismatch with the ZnO substrate, It can be a quality reflective layer. Further, by adjusting the relative refractive index difference between the high refractive index layer and the low refractive index layer and the number of lamination periods in the distributed Bragg reflection type mirror, a desired reflectance can be realized. At this time, when the reflective layer composed of ZnO and ZnMgO exhibits n-type conductivity, the element structure becomes simple.

  When the wavelength of light emitted from the light emitting layer composed of a ZnO-based semiconductor crystal is 370 nm or less, the external quantum efficiency is more significantly improved by providing a reflective layer between the substrate and the light emitting layer. . At this time, when at least a part of the light emitting layer is made of ZnO or ZnMgO, the wavelength of light emitted from the light emitting layer can be 370 nm or less.

  The first reflective layer provided between the substrate and the light emitting layer and the second reflective layer provided on the opposite side of the light emitting layer from the substrate constitute a resonator, and at least of the light emitted from the light emitting layer When a part is resonated and emitted to the outside of the light emitting element, a light emitting element with a narrower emission spectrum width can be obtained. In addition, by appropriately setting the reflectance of the first reflective layer and the second reflective layer, a state of inversion distribution can be created, and an element with extremely high emission luminance can be obtained.

  When the second reflective layer is composed of a distributed Bragg reflector type mirror in which one or more periodic layers of ZnO and ZnMgO are laminated, the relative refractive index difference between the high refractive index layer and the low refractive index layer and the number of lamination periods are set. By adjusting, a desired reflectance can be realized. At this time, when the second reflective layer composed of ZnO and ZnMgO exhibits p-type conductivity, the element structure becomes simple.

The present invention will be described below with reference to the drawings based on the best mode.
FIG. 1 schematically shows a semiconductor light emitting device according to a first embodiment of the present invention. The semiconductor light emitting device 10 includes a ZnO substrate 11, a reflective layer 12 provided on the ZnO substrate 11, a ZnO-based semiconductor crystal layer 13 provided on the reflective layer 12, and the back surface of the ZnO substrate 11. And a second metal electrode 15 provided on the ZnO-based semiconductor crystal layer 13, and the ZnO-based semiconductor crystal layer 13 is a light emitting layer (not shown). ).

  By applying a forward current to the semiconductor light emitting element 10, light is emitted in all directions from the ZnO-based semiconductor crystal layer 13 having the light emitting layer as shown in FIG. Here, the light emitted from the light emitting layer toward the ZnO substrate is reflected by the reflective layer 12 provided between the ZnO substrate and the light emitting layer, and is emitted from the upper surface and side surfaces of the device to the outside of the device. become. As a result, the external quantum efficiency of the light emitting element is improved.

  FIG. 3 schematically shows an example of the structure of the semiconductor light emitting device according to the first embodiment. In the semiconductor light emitting element 10A according to this structural example, as the ZnO substrate 11, a ZnO substrate showing n-type conductivity manufactured by a hydrothermal synthesis method is used.

  On the ZnO substrate 11, a distributed Bragg reflector (DBR) mirror (hereinafter referred to as a DBR mirror) formed by laminating one or more periodic layers of ZnO and ZnMgO is provided as the reflective layer 12. . More specifically, this DBR mirror is formed by arbitrarily laminating a ZnO layer that is a high refractive index layer and a ZnMgO layer that is a low refractive index layer with a film thickness corresponding to a quarter wavelength. In the semiconductor light emitting device according to the first embodiment, the reflective layer 12 provided between the ZnO substrate and the light emitting layer may be any material as long as it can reflect the light emitted from the light emitting layer. As in the structure example, by using a DBR mirror composed of ZnO and ZnMgO (hereinafter referred to as a ZnO / ZnMgO DBR mirror), lattice mismatch with the ZnO substrate 11 is almost eliminated and a high-quality reflective layer is obtained. . Further, the reflectance of the DBR mirror can be set in any way by adjusting the relative refractive index difference between the high refractive index layer and the low refractive index layer and the number of lamination periods in the DBR mirror. Here, the relative refractive index difference can be adjusted by changing the refractive index of the ZnMgO layer, which is a low refractive index layer, by adjusting the mixed crystal ratio of Zn and Mg in ZnMgO. Furthermore, it is desirable that a dopant such as gallium (Ga) is mixed in the ZnO layer and the ZnMgO layer constituting the DBR mirror to exhibit n-type conductivity. Thereby, the light emitting layer mentioned later becomes a simpler structure.

The ZnO-based semiconductor crystal layer 13 in this structural example is composed of an n-type cladding layer 16 made of ZnMgO, a light-emitting layer 17 made of ZnO, and a p-type cladding layer 18 made of ZnMgO, forming a double heterostructure. Yes.
The ZnO / ZnMgO DBR mirror, the n-type ZnMgO clad layer 16, the ZnO light-emitting layer 17, and the p-type ZnMgO clad layer 18 are, for example, a molecular beam epitaxy (MBE) method or a laser molecular beam epitaxy (laser MBE) method. Further, it can be grown by a metal organic vapor phase epitaxy (MOVPE) method or the like.

  The first metal electrode 14 provided on the back surface of the ZnO substrate 11 is made of a metal material that is in ohmic contact with the ZnO substrate 11. The second metal electrode 15 provided on the surface of the ZnO-based semiconductor crystal layer 13 (specifically, the p-type cladding layer 18) is in ohmic contact with the ZnO-based semiconductor crystal layer 13 (specifically, the p-type cladding layer 18). It is composed of a metal material. These metal electrodes 14 and 15 can be manufactured by a vacuum evaporation method or an electron beam (EB) evaporation method. Further, if necessary, patterning may be performed into a predetermined shape using a photolithography technique and an etching process.

  By applying a forward current to the semiconductor light emitting element 10 </ b> A according to this structural example, light having a wavelength of about 370 nm is emitted from the ZnO light emitting layer 17. Since the ZnO substrate 11 has a relatively high absorptance with respect to light of this wavelength, when there is no reflective layer 12, a part of the light emitted from the light emitting layer 17 toward the ZnO substrate 11 is absorbed. As a result, the external quantum efficiency decreases. However, when the reflective layer 12 is provided between the ZnO substrate 11 and the light emitting layer 17, the light emitted toward the ZnO substrate 11 can be reflected by the reflective layer 12 and emitted to the upper and side surfaces of the device. . As a result, the external quantum efficiency of the light emitting element is improved.

In the example described above, the case where the light emitting layer 17 is made of ZnO has been described. However, the light emitting layer 17 that exhibits the effects of the present invention is not limited to the ZnO light emitting layer. The ZnO substrate 11 is similarly effective if it is a light emitting layer that emits light with a wavelength of 370 nm or less having a relatively high absorption rate.
Specific examples of the light-emitting layer that is at least partially composed of ZnO or ZnMgO and emits light having a wavelength of 370 nm or less include a quantum well made of ZnMgO, ZnO / ZnMgO, Zn _1-x Mg, in addition to the above-described ZnO. _x O / Zn _1-y Mg _y O quantum wells (x and y are ZnMgO mixed crystal ratios, x <y) and the like are included. An excellent effect can be exhibited.

Next, a semiconductor light emitting device according to a second embodiment of the present invention will be described.
FIG. 4 schematically shows a semiconductor light emitting device according to a second embodiment of the present invention. The semiconductor light emitting device 20 includes a ZnO substrate 21, a first reflective layer 22 provided on the ZnO substrate 21, a ZnO-based semiconductor crystal layer 23 provided on the first reflective layer 22, The second reflective layer 24 provided on the ZnO-based semiconductor crystal layer 23, the first metal electrode 25 provided on the back surface of the ZnO substrate 11, and the second reflective layer 24. The ZnO-based semiconductor crystal layer 23 includes a light emitting layer (not shown).

The ZnO-based semiconductor crystal layer 23 provided between the first reflective layer 22 and the second reflective layer 24 is designed so that its effective optical path length substantially matches the wavelength of light emitted from the light emitting layer. In this structure, at least a part of light emitted from the light emitting layer resonates between the first reflective layer 22 and the second reflective layer 24. By applying a forward current to the semiconductor light emitting element 20, at least a part of the light emitted from the light emitting layer resonates between the first reflective layer 22 and the second reflective layer 24, and the outside of the light emitting element. Is released.
The configuration of the ZnO substrate 21, the first reflective layer 22, the ZnO-based semiconductor crystal layer 23, the first metal electrode 25, and the second metal electrode 26 is the same as that of the ZnO substrate 11 and the reflective layer 12 according to the first embodiment. Since the structure is the same as that of the ZnO-based semiconductor crystal layer 13, the first metal electrode 14, and the second metal electrode 15, overlapping description is omitted.

  FIG. 5 schematically shows a first example of the structure of the semiconductor light emitting device according to the second embodiment. In the semiconductor light emitting device 20A according to this structural example, the ZnO-based semiconductor crystal layer 23 includes an n-type cladding layer 27 made of ZnMgO, a light-emitting layer 28 made of ZnO, and a p-type cladding layer 29 made of ZnMgO. Yes.

The first reflective layer 22 is a ZnO / ZnMgO DBR mirror, and more preferably exhibits n-type conductivity.
The translucent / semi-transmissive metal electrode 24A provided on the surface of the p-type cladding layer 29 serves as the second reflective layer 24 and the second metal electrode 26 of the semiconductor light emitting device according to the second embodiment.

  Further, the total film thickness of the n-type ZnMgO clad layer 27, the ZnO light-emitting layer 28, and the p-type ZnMgO clad layer 29 is regarded as an effective optical path length so that the film almost matches the wavelength of light emitted from the ZnO light-emitting layer 28. The thickness is designed so that at least part of the light emitted from the ZnO light emitting layer 28 resonates between the DBR mirror and the translucent / semi-transmissive metal electrode. With such a configuration, the light resonated inside the ZnO-based semiconductor crystal layer 23 can be emitted to the outside of the device.

  Furthermore, in the semiconductor light emitting element 20A of this structural example, the light resonated by the resonator can cause stimulated emission inside the ZnO-based semiconductor crystal layer 23. In general, stimulated emission light has a very narrow emission spectrum width, so that light with relatively high monochromaticity can be obtained. Further, the wavelength of the stimulated emission light depends on the effective resonator length. Generally, since the effective resonator length has a small change with respect to the temperature of the light emitting element, as a result, the temperature dependence of the emission wavelength of the light emitted from the light emitting element can be made extremely small. When a white light emitting device is realized by combining an ultraviolet light emitting device or a blue light emitting device and a phosphor, the color and light emission intensity of the white light emitting device may be greatly changed by changing the emission wavelength of the ultraviolet light emitting device or the blue light emitting device. It has been known. For this reason, according to the present structure in which light is stimulated to be emitted by the resonator, when applied to a white light emitting element, it can be expected to reduce the change in the color of the white light emitting element and the emission intensity, which is very useful.

FIG. 6 schematically shows a second example of the structure of the semiconductor light emitting device according to the second embodiment. The semiconductor light emitting device 20B according to this structural example includes a first reflective layer 22 composed of an n-type ZnO / ZnMgO DBR mirror, an n-type ZnMgO clad layer 27, a ZnO light-emitting layer 28, and a p-type ZnMgO clad layer on a ZnO substrate 21. 29, a second reflective layer 24 composed of a p-type ZnO / ZnMgO DBR mirror is sequentially laminated, and further, a first metal electrode 25 is formed on the back surface of the ZnO substrate 21, and a second metal is formed on the second reflective layer 24. And an electrode 26.
Here, the p-type ZnO / ZnMgO DBR mirror refers to a p-type ZnO / ZnMgO DBR mirror in which a dopant such as nitrogen (N) is mixed in a DBR mirror provided by laminating one or more periodic layers of ZnO and ZnMgO. This shows the electrical conductivity.

  Further, the total film thickness of the n-type ZnMgO clad layer 27, the ZnO light-emitting layer 28, and the p-type ZnMgO clad layer 29 is regarded as an effective optical path length so that the film almost matches the wavelength of light emitted from the ZnO light-emitting layer 28. The thickness is designed so that at least part of the light emitted from the ZnO light emitting layer 28 resonates between the n-type ZnO / ZnMgO DBR mirror and the p-type ZnO / ZnMgO DBR mirror.

In addition, an insulating portion 30 is provided in a part of the light emitting element by an ion implantation method or the like so that current can be injected only into a specific region of the light emitting element, thereby forming a current confinement structure.
Furthermore, a light extraction portion 31 is provided on the upper surface of the light emitting element for extracting light emitted from the inside of the element to the outside of the element.

  In the semiconductor light emitting device 20B having such a structure, by appropriately designing the reflectance of the two ZnO / ZnMgO DBR mirrors, an inversion distribution is generated inside the ZnO-based semiconductor crystal layer 23, and stimulated emission is caused. Only light can be emitted outside the device. When only stimulated emission light is emitted to the outside of the device, the emission spectrum width is extremely narrow, and light with extremely high monochromaticity can be obtained. In addition, the light emitted from the light extraction unit 31 having a limited opening cross-sectional area has extremely high directivity, and thus is extremely useful when high-luminance light is required.

As mentioned above, although this invention has been demonstrated based on suitable embodiment, this invention is not limited to the above-mentioned example, A various change is possible in the range which does not deviate from the summary of this invention.
For example, in the present invention, the structure of the ZnO-based semiconductor crystal layer including the light emitting layer is not limited to those exemplified in the above structural examples. In addition, the structure illustrated in FIGS. 7, 8, 9, and 10 may be used.

In the present invention, the DBR mirrors used as the reflective layer 12, the first reflective layer 22, and the second reflective layer 24 are not limited to those made of ZnO / ZnMgO. In addition, ZnO-based semiconductor crystal layers such as ZnO, ZnMgO, ZnCdO, zinc oxysulfide (ZnOS), and zinc selenide (ZnOSe) may be used in any combination as long as the combined layers do not have the same refractive index. Alternatively, one of ZnO mixed crystals such as ZnMgO, ZnCdO, ZnOS, and ZnOSe may be selected and combined at different composition ratios. As an example of the former, a high refractive index layer is made of ZnCdO, and a low refractive index layer is made of ZnO. In the latter case, the high refractive index layer is Zn _1-x Mg _x O, the low refractive index layer is Zn _1-y Mg _y O (x and y are ZnMgO mixed crystal ratios, and x <y There is a thing composed of).

  The present invention can be used as various semiconductor light emitting devices including light emitting diodes (LEDs), laser diodes (LDs), and devices that apply these basic principles.

It is sectional drawing which shows the semiconductor light-emitting device which concerns on a 1st form example. It is explanatory drawing explaining the effect of the reflection layer in the semiconductor light-emitting device shown in FIG. It is sectional drawing which shows an example of the structure of the semiconductor light-emitting device which concerns on a 1st form example. It is sectional drawing which shows the semiconductor light-emitting device which concerns on a 2nd form example. It is sectional drawing which shows the 1st structural example of the semiconductor light-emitting device which concerns on a 2nd form example. It is sectional drawing which shows the 2nd structural example of the semiconductor light-emitting device which concerns on a 2nd form example. It is sectional drawing which shows the semiconductor light-emitting device described in the nonpatent literature 1. It is sectional drawing which shows the semiconductor light-emitting device described in patent document 1. It is sectional drawing which shows the 1st example of another semiconductor light-emitting device. It is sectional drawing which shows the 2nd example of another semiconductor light-emitting device. FIG. 8 is an explanatory diagram for explaining how light emitted from a light emitting layer is absorbed in the semiconductor light emitting device shown in FIG. 7.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10,10A ... Semiconductor light emitting element which concerns on 1st form example, 11 ... ZnO board | substrate, 12 ... Reflective layer, 13 ... ZnO type semiconductor crystal layer, 17 ... Light emitting layer, 20, 20A, 20B ... Semiconductor which concerns on 2nd form example Light emitting element, 21 ... ZnO substrate, 22 ... first reflective layer, 23 ... ZnO based semiconductor crystal layer, 24 ... second reflective layer, 28 ... light emitting layer.

Claims (9)

A semiconductor light emitting device comprising a light emitting layer composed of a zinc oxide based semiconductor crystal on a substrate made of zinc oxide,
A semiconductor light emitting element, wherein a reflective layer for reflecting light emitted from the light emitting layer is provided between the substrate and the light emitting layer.   The semiconductor light emitting element according to claim 1, wherein the reflective layer provided between the substrate and the light emitting layer is formed by laminating one or more periodic layers of zinc oxide and zinc magnesium oxide.   The semiconductor light emitting element according to claim 2, wherein the reflective layer provided between the substrate and the light emitting layer exhibits n-type conductivity.   4. The semiconductor light emitting element according to claim 1, wherein the light emitting layer emits light having a wavelength of 370 nm or less. 5.   The semiconductor light emitting element according to claim 4, wherein at least a part of the light emitting layer is composed of zinc oxide or zinc magnesium oxide.   The reflective layer provided between the substrate and the light emitting layer is used as a first reflective layer, and a second reflective layer is provided on the side of the light emitting layer opposite to the substrate, and the first reflective layer and the first reflective layer are formed. A resonator is constituted by the two reflective layers, and at least a part of the light emitted from the light emitting layer is resonated by the first reflective layer and the second reflective layer and emitted to the outside of the light emitting element. It is comprised, The semiconductor light-emitting device as described in any one of Claims 1-5 characterized by the above-mentioned.   The first reflective layer and the second reflective layer emit light resonated between the first reflective layer and the second reflective layer to the outside of the light emitting element in a state where an inversion distribution is generated. The semiconductor light-emitting device according to claim 6, wherein   8. The semiconductor light emitting element according to claim 6, wherein the second reflective layer is formed by laminating one or more periodic layers of zinc oxide and zinc magnesium oxide.   The semiconductor light emitting element according to claim 8, wherein the second reflective layer exhibits p-type conductivity.

Images