JP2008069056A - Dielectric porcelain composition - Google Patents
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本発明は、マイクロ波やミリ波等の高周波領域で使用される誘電体フィルタや共振器等の材料に適した誘電体磁器組成物に関するものである。 The present invention relates to a dielectric ceramic composition suitable for materials such as a dielectric filter and a resonator used in a high frequency region such as a microwave and a millimeter wave.
近年、携帯電話を中心とする移動体通信分野が急速な発展を遂げている一方、それらの端末機器で使用される電子部品には小型化、薄型化、高機能化という要求が益々強くなっている。誘電体フィルタや共振器の分野でも例外ではなく、この様な要求を実現するために構造の改良のみならず、材料の改良も必要になってきている。
誘電体フィルタや共振器に用いられる誘電体磁器組成物は、誘電率が高く、誘電損失が小さい、すなわち、Q値が高いことが望まれている。また、誘電体フィルタや共振器が積層型電子部品の場合、誘電体磁器組成物と銀や銅等の導体パターンを積層し、これらの積層体を焼成する必要があるため、銀や銅等の融点よりも低い温度で焼結することが可能な誘電体磁器組成物が望まれている。
Dielectric ceramic compositions used for dielectric filters and resonators are desired to have a high dielectric constant and a low dielectric loss, that is, a high Q value. In addition, when the dielectric filter or resonator is a multilayer electronic component, it is necessary to laminate a dielectric ceramic composition and a conductor pattern such as silver or copper, and to fire these laminates. A dielectric ceramic composition that can be sintered at a temperature lower than the melting point is desired.
従来の誘電体磁器組成物において、誘電率が比較的高く、Q値が高いものとしてMgTiO3−CaTiO3等が知られている。しかしながら、これらの従来の誘電体磁器組成物は、焼結温度が高いという問題があり、小型化、薄型化が可能な積層型電子部品に用いることができず、電子部品の小型化、薄型化に貢献できなかった。 In a conventional dielectric ceramic composition, MgTiO 3 —CaTiO 3 or the like is known as one having a relatively high dielectric constant and a high Q value. However, these conventional dielectric porcelain compositions have a problem that the sintering temperature is high, and cannot be used for multilayer electronic components that can be reduced in size and thickness. Could not contribute.
本発明は、誘電率とQ値を高くして誘電体フィルタや共振器等の小型化、低損失化を可能にすると共に、銀や銅等の融点よりも低い温度で焼結することが可能な誘電体磁器組成物を提供することを目的とする。 The present invention enables a dielectric filter and a resonator to be reduced in size and loss by increasing the dielectric constant and Q value, and can be sintered at a temperature lower than the melting point of silver, copper, or the like. An object of the present invention is to provide a dielectric ceramic composition.
本発明の誘電体磁器組成物は、一般式xMgTiO3・yMg2TiO4・zCaTiO3と表され、x、y、zがモル%でそれぞれ、69.3≦x≦84.0、14.1≦y≦30.0、0.8≦z≦6.1の範囲にある組成物100重量部に対して、Li系ガラスを25重量部〜35重量部添加する。 The dielectric ceramic composition of the present invention is represented by the general formula xMgTiO 3 · yMg 2 TiO 4 · zCaTiO 3, and x, y, and z are mol%, and 69.3 ≦ x ≦ 84.0 and 14.1 respectively. 25 to 35 parts by weight of Li-based glass is added to 100 parts by weight of the composition in the range of ≦ y ≦ 30.0 and 0.8 ≦ z ≦ 6.1.
本発明の誘電体磁器組成物は、一般式xMgTiO3・yMg2TiO4・zCaTiO3と表され、x、y、zがモル%でそれぞれ、69.3≦x≦84.0、14.1≦y≦30.0、0.8≦z≦6.1の範囲にある組成物100重量部に対して、Li系ガラスを25重量部〜35重量部添加するので、誘電率とQ値を向上できると共に、焼結温度を銀や銅等の融点よりも低くできる。 The dielectric ceramic composition of the present invention is represented by the general formula xMgTiO 3 · yMg 2 TiO 4 · zCaTiO 3, and x, y, and z are mol%, and 69.3 ≦ x ≦ 84.0 and 14.1 respectively. Since Li-type glass is added in an amount of 25 to 35 parts by weight with respect to 100 parts by weight of the composition in the range of ≦ y ≦ 30.0 and 0.8 ≦ z ≦ 6.1, the dielectric constant and the Q value are The sintering temperature can be made lower than the melting point of silver or copper.
本発明の誘電体磁器組成物は、一般式xMgTiO3・yMg2TiO4・zCaTiO3と表され、x、y、zがモル%でそれぞれ、69.3≦x≦84.0、14.1≦y≦30.0、0.8≦z≦6.1の範囲にあるセラミックス主成分にLiを含有するガラス(いわゆる、Li系ガラス)が添加される。この時、Liを含有するガラスは、セラミックス主成分100重量部に対して、25重量部〜35重量部の範囲で調節することにより、積層型電子部品の誘電体層間の導体パターンを構成する銀や銅等の融点よりも低い950℃以下の温度で焼結が可能になる。また、x、y、zを前述の範囲で調節することにより、誘電率とQ値を向上させることができる。 The dielectric ceramic composition of the present invention is represented by the general formula xMgTiO 3 · yMg 2 TiO 4 · zCaTiO 3, and x, y, and z are mol%, and 69.3 ≦ x ≦ 84.0 and 14.1 respectively. Glass containing Li (so-called Li-based glass) is added to the ceramic main component in the range of ≦ y ≦ 30.0 and 0.8 ≦ z ≦ 6.1. At this time, the Li-containing glass is a silver constituting the conductor pattern between the dielectric layers of the multilayer electronic component by adjusting in the range of 25 to 35 parts by weight with respect to 100 parts by weight of the ceramic main component. Sintering is possible at a temperature of 950 ° C. or lower, which is lower than the melting point of copper or copper. Further, the dielectric constant and the Q value can be improved by adjusting x, y, and z within the aforementioned ranges.
以下、本発明の誘電体磁器組成物の実施例について説明する。
まず、本発明による誘電体磁器組成物の製造方法について説明する。MgTiO3、Mg2TiO4、CaTiO3及び、Li系ガラスの原料粉末を所定の組成となるように秤量して、これをボールミル等を用いて16時間湿混合し、これを乾燥させた。これらの混合粉末を750〜800℃で仮焼し、この仮焼粉末をボールミル等を用いて20時間湿式粉砕した。この粉砕物を乾燥した後、これにバインダーを加えて混合し、ふるいを用いて造粒した。この造粒粉末に3t/cm2の圧力を加えて円柱状に成形し、大気中において850〜1050℃で焼成することにより本発明による材料を得た。
Examples of the dielectric ceramic composition of the present invention will be described below.
First, a method for producing a dielectric ceramic composition according to the present invention will be described. MgTiO 3 , Mg 2 TiO 4 , CaTiO 3, and Li-based glass raw material powder were weighed so as to have a predetermined composition, and this was wet-mixed for 16 hours using a ball mill or the like, and dried. These mixed powders were calcined at 750 to 800 ° C., and this calcined powder was wet-ground for 20 hours using a ball mill or the like. The pulverized product was dried, mixed with a binder, and granulated using a sieve. The granulated powder was formed into a cylindrical shape by applying a pressure of 3 t / cm 2 and fired at 850 to 1050 ° C. in the air to obtain a material according to the present invention.
本発明の誘電体磁器組成物の特性の測定は、前述の誘電体磁器組成物を成形、焼成して評価サンプルを得て行った。この特性の測定は、Hakki&Coleman法により、7〜8GHzにおける比誘電率(εr)とQ値(Qf)を測定した。 The characteristics of the dielectric ceramic composition of the present invention were measured by molding and baking the above-mentioned dielectric ceramic composition to obtain an evaluation sample. This characteristic was measured by measuring the relative dielectric constant (εr) and the Q value (Qf) at 7 to 8 GHz by the Hakki & Coleman method.
図1は、xMgTiO3・yMg2TiO4・zCaTiO3において、それぞれの組成のモル比x、y、zを変え、かつ、Li系ガラスの添加量を変えたときの焼結温度、比誘電率(εr)及び、Q値(Qf)を表にまとめたものである。なお、Li系ガラスはSiO2が17重量部、CaOが19.7重量部、Li2Oが12.6重量部、BaOが21.5重量部、B2O3が29.2重量部のものを用い、試料Noの*印は本発明の範囲外のものであることを示している。
本発明の誘電体磁器組成物は、MgTiO3の比率xが69.3≦x≦84.0、Mg2TiO4の比率yが14.1≦y≦30.0、CaTiO3の比率zが0.8≦z≦6.1、Li系ガラスの添加量が25重量部〜35重量部の範囲内で、焼結温度が950℃以下、比誘電率が20程度、Q値が10000以上にすることができた。
FIG. 1 shows the sintering temperature and relative dielectric constant of xMgTiO 3 .yMg 2 TiO 4 .zCaTiO 3 when the molar ratio x, y, z of each composition is changed and the addition amount of Li-based glass is changed. (Εr) and Q value (Qf) are summarized in a table. The Li-based glass has 17 parts by weight of SiO 2 , 19.7 parts by weight of CaO, 12.6 parts by weight of Li 2 O, 21.5 parts by weight of BaO, and 29.2 parts by weight of B 2 O 3. Sample No. * indicates that it is outside the scope of the present invention.
In the dielectric ceramic composition of the present invention, the ratio x of MgTiO 3 is 69.3 ≦ x ≦ 84.0, the ratio y of Mg 2 TiO 4 is 14.1 ≦ y ≦ 30.0, and the ratio z of CaTiO 3 is 0.8 ≦ z ≦ 6.1, the amount of Li-based glass added is in the range of 25 parts by weight to 35 parts by weight, the sintering temperature is 950 ° C. or less, the relative dielectric constant is about 20, and the Q value is 10,000 or more. We were able to.
この様に本発明の誘電体磁器組成物は、xの値が69.3≦x≦84.0、yの値が14.1≦y≦30.0、zの値が0.8≦z≦6.1、Li系ガラスの添加量が25重量部〜35重量部の範囲内で、積層タイプの誘電体フィルタ等において望まれる比誘電率17.5〜20.5、Q値が10000以上の特性を得ることができると共に、焼結温度を銀や銅等の融点よりも低い950℃以下とすることができる。 Thus, in the dielectric ceramic composition of the present invention, the value of x is 69.3 ≦ x ≦ 84.0, the value of y is 14.1 ≦ y ≦ 30.0, and the value of z is 0.8 ≦ z. ≦ 6.1, Li-based glass added in the range of 25 parts by weight to 35 parts by weight, dielectric constant of 17.5 to 20.5 desired in laminated type dielectric filters, etc., Q value is 10,000 or more In addition, the sintering temperature can be 950 ° C. or lower, which is lower than the melting point of silver or copper.
Claims (2)
と表され、
x、y、zがモル%でそれぞれ、69.3≦x≦84.0、14.1≦y≦30.0、0.8≦z≦6.1の範囲にある組成物100重量部に対して、Li系ガラスを25重量部〜35重量部添加したことを特徴とする誘電体磁器組成物。 General formula xMgTiO 3 · yMg 2 TiO 4 · zCaTiO 3
And
In 100 parts by weight of the composition in which x, y and z are in mol% and are in the ranges of 69.3 ≦ x ≦ 84.0, 14.1 ≦ y ≦ 30.0 and 0.8 ≦ z ≦ 6.1, respectively. On the other hand, a dielectric ceramic composition comprising 25 to 35 parts by weight of Li-based glass added.
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011079719A (en) * | 2009-10-09 | 2011-04-21 | Toko Inc | Dielectric ceramic composition |
US8067324B2 (en) * | 2007-11-26 | 2011-11-29 | Elizaveta Arkadievna Nenasheva | Low dielectric loss ceramic ferroelectric composite material |
CN105985102A (en) * | 2015-01-30 | 2016-10-05 | 上海光线新材料科技有限公司 | Microwave dielectric ceramic material and preparation method thereof |
CN110922183A (en) * | 2019-11-13 | 2020-03-27 | 深圳顺络电子股份有限公司 | Preparation method of microwave dielectric sintered powder material, microwave dielectric ceramic and application thereof |
CN111004030A (en) * | 2019-12-24 | 2020-04-14 | 苏州同拓光电科技有限公司 | MgTiO (magnesium-titanium-oxide) powder3Microwave-based dielectric ceramic and preparation method thereof |
US10892097B2 (en) | 2016-03-04 | 2021-01-12 | Tdk Electronics Ag | Dielectric ceramic composition, method for the production and use thereof |
CN114874005A (en) * | 2022-06-10 | 2022-08-09 | 安徽理工大学 | Temperature-stable magnesium titanate base microwave dielectric composite ceramic and preparation method thereof |
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JP2004168579A (en) * | 2002-11-19 | 2004-06-17 | Tdk Corp | Dielectric porcelain composition and dielectric resonator |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US8067324B2 (en) * | 2007-11-26 | 2011-11-29 | Elizaveta Arkadievna Nenasheva | Low dielectric loss ceramic ferroelectric composite material |
JP2011079719A (en) * | 2009-10-09 | 2011-04-21 | Toko Inc | Dielectric ceramic composition |
CN105985102A (en) * | 2015-01-30 | 2016-10-05 | 上海光线新材料科技有限公司 | Microwave dielectric ceramic material and preparation method thereof |
US10892097B2 (en) | 2016-03-04 | 2021-01-12 | Tdk Electronics Ag | Dielectric ceramic composition, method for the production and use thereof |
CN110922183A (en) * | 2019-11-13 | 2020-03-27 | 深圳顺络电子股份有限公司 | Preparation method of microwave dielectric sintered powder material, microwave dielectric ceramic and application thereof |
CN110922183B (en) * | 2019-11-13 | 2021-10-19 | 深圳顺络电子股份有限公司 | Preparation method of microwave dielectric sintered powder material, microwave dielectric ceramic and application thereof |
CN111004030A (en) * | 2019-12-24 | 2020-04-14 | 苏州同拓光电科技有限公司 | MgTiO (magnesium-titanium-oxide) powder3Microwave-based dielectric ceramic and preparation method thereof |
CN111004030B (en) * | 2019-12-24 | 2021-09-07 | 苏州同拓光电科技有限公司 | MgTiO (magnesium-titanium-oxide) powder3Microwave-based dielectric ceramic and preparation method thereof |
CN114874005A (en) * | 2022-06-10 | 2022-08-09 | 安徽理工大学 | Temperature-stable magnesium titanate base microwave dielectric composite ceramic and preparation method thereof |
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