JP2008069056A - Dielectric porcelain composition - Google Patents

Dielectric porcelain composition Download PDF

Info

Publication number
JP2008069056A
JP2008069056A JP2006250468A JP2006250468A JP2008069056A JP 2008069056 A JP2008069056 A JP 2008069056A JP 2006250468 A JP2006250468 A JP 2006250468A JP 2006250468 A JP2006250468 A JP 2006250468A JP 2008069056 A JP2008069056 A JP 2008069056A
Authority
JP
Japan
Prior art keywords
dielectric
weight
parts
value
ceramic composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006250468A
Other languages
Japanese (ja)
Inventor
Masakazu Shibuya
正和 渋谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP2006250468A priority Critical patent/JP2008069056A/en
Publication of JP2008069056A publication Critical patent/JP2008069056A/en
Pending legal-status Critical Current

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dielectric porcelain composition which enhances a dielectric constant and a Q value, downsizes a dielectric filter and a resonator, and reduces a dielectric loss, and can be sintered at a temperature lower than a melting point of silver, copper or the like. <P>SOLUTION: 25-35 pts.wt. of a Li glass is added to 100 pts.wt. of a composition represented by a general formula: xMgTiO<SB>3</SB>*yMg<SB>2</SB>TiO<SB>4</SB>*zCaTiO<SB>3</SB>, where x, y, and z are respectively in the range of 69.3≤x≤84.0, 14.1≤y≤30.0, and 0.8≤z≤6.1 by mol%. Thus, the dielectric constant and the Q value are improved while a sintering temperature can be lowered to a temperature lower than a melting point of a metal composed of a conductor pattern. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、マイクロ波やミリ波等の高周波領域で使用される誘電体フィルタや共振器等の材料に適した誘電体磁器組成物に関するものである。   The present invention relates to a dielectric ceramic composition suitable for materials such as a dielectric filter and a resonator used in a high frequency region such as a microwave and a millimeter wave.

近年、携帯電話を中心とする移動体通信分野が急速な発展を遂げている一方、それらの端末機器で使用される電子部品には小型化、薄型化、高機能化という要求が益々強くなっている。誘電体フィルタや共振器の分野でも例外ではなく、この様な要求を実現するために構造の改良のみならず、材料の改良も必要になってきている。
誘電体フィルタや共振器に用いられる誘電体磁器組成物は、誘電率が高く、誘電損失が小さい、すなわち、Q値が高いことが望まれている。また、誘電体フィルタや共振器が積層型電子部品の場合、誘電体磁器組成物と銀や銅等の導体パターンを積層し、これらの積層体を焼成する必要があるため、銀や銅等の融点よりも低い温度で焼結することが可能な誘電体磁器組成物が望まれている。
特開平9−181549号公報 特願2005−206542号
In recent years, while the mobile communication field centering on mobile phones has been rapidly developing, the demand for miniaturization, thinning, and high functionality has become stronger for electronic components used in these terminal devices. Yes. There are no exceptions in the field of dielectric filters and resonators, and not only structural improvements but also material improvements are needed to meet these requirements.
Dielectric ceramic compositions used for dielectric filters and resonators are desired to have a high dielectric constant and a low dielectric loss, that is, a high Q value. In addition, when the dielectric filter or resonator is a multilayer electronic component, it is necessary to laminate a dielectric ceramic composition and a conductor pattern such as silver or copper, and to fire these laminates. A dielectric ceramic composition that can be sintered at a temperature lower than the melting point is desired.
Japanese Patent Laid-Open No. 9-181549 Japanese Patent Application No. 2005-206542

従来の誘電体磁器組成物において、誘電率が比較的高く、Q値が高いものとしてMgTiO−CaTiO等が知られている。しかしながら、これらの従来の誘電体磁器組成物は、焼結温度が高いという問題があり、小型化、薄型化が可能な積層型電子部品に用いることができず、電子部品の小型化、薄型化に貢献できなかった。 In a conventional dielectric ceramic composition, MgTiO 3 —CaTiO 3 or the like is known as one having a relatively high dielectric constant and a high Q value. However, these conventional dielectric porcelain compositions have a problem that the sintering temperature is high, and cannot be used for multilayer electronic components that can be reduced in size and thickness. Could not contribute.

本発明は、誘電率とQ値を高くして誘電体フィルタや共振器等の小型化、低損失化を可能にすると共に、銀や銅等の融点よりも低い温度で焼結することが可能な誘電体磁器組成物を提供することを目的とする。   The present invention enables a dielectric filter and a resonator to be reduced in size and loss by increasing the dielectric constant and Q value, and can be sintered at a temperature lower than the melting point of silver, copper, or the like. An object of the present invention is to provide a dielectric ceramic composition.

本発明の誘電体磁器組成物は、一般式xMgTiO・yMgTiO・zCaTiOと表され、x、y、zがモル%でそれぞれ、69.3≦x≦84.0、14.1≦y≦30.0、0.8≦z≦6.1の範囲にある組成物100重量部に対して、Li系ガラスを25重量部〜35重量部添加する。 The dielectric ceramic composition of the present invention is represented by the general formula xMgTiO 3 · yMg 2 TiO 4 · zCaTiO 3, and x, y, and z are mol%, and 69.3 ≦ x ≦ 84.0 and 14.1 respectively. 25 to 35 parts by weight of Li-based glass is added to 100 parts by weight of the composition in the range of ≦ y ≦ 30.0 and 0.8 ≦ z ≦ 6.1.

本発明の誘電体磁器組成物は、一般式xMgTiO・yMgTiO・zCaTiOと表され、x、y、zがモル%でそれぞれ、69.3≦x≦84.0、14.1≦y≦30.0、0.8≦z≦6.1の範囲にある組成物100重量部に対して、Li系ガラスを25重量部〜35重量部添加するので、誘電率とQ値を向上できると共に、焼結温度を銀や銅等の融点よりも低くできる。 The dielectric ceramic composition of the present invention is represented by the general formula xMgTiO 3 · yMg 2 TiO 4 · zCaTiO 3, and x, y, and z are mol%, and 69.3 ≦ x ≦ 84.0 and 14.1 respectively. Since Li-type glass is added in an amount of 25 to 35 parts by weight with respect to 100 parts by weight of the composition in the range of ≦ y ≦ 30.0 and 0.8 ≦ z ≦ 6.1, the dielectric constant and the Q value are The sintering temperature can be made lower than the melting point of silver or copper.

本発明の誘電体磁器組成物は、一般式xMgTiO・yMgTiO・zCaTiOと表され、x、y、zがモル%でそれぞれ、69.3≦x≦84.0、14.1≦y≦30.0、0.8≦z≦6.1の範囲にあるセラミックス主成分にLiを含有するガラス(いわゆる、Li系ガラス)が添加される。この時、Liを含有するガラスは、セラミックス主成分100重量部に対して、25重量部〜35重量部の範囲で調節することにより、積層型電子部品の誘電体層間の導体パターンを構成する銀や銅等の融点よりも低い950℃以下の温度で焼結が可能になる。また、x、y、zを前述の範囲で調節することにより、誘電率とQ値を向上させることができる。 The dielectric ceramic composition of the present invention is represented by the general formula xMgTiO 3 · yMg 2 TiO 4 · zCaTiO 3, and x, y, and z are mol%, and 69.3 ≦ x ≦ 84.0 and 14.1 respectively. Glass containing Li (so-called Li-based glass) is added to the ceramic main component in the range of ≦ y ≦ 30.0 and 0.8 ≦ z ≦ 6.1. At this time, the Li-containing glass is a silver constituting the conductor pattern between the dielectric layers of the multilayer electronic component by adjusting in the range of 25 to 35 parts by weight with respect to 100 parts by weight of the ceramic main component. Sintering is possible at a temperature of 950 ° C. or lower, which is lower than the melting point of copper or copper. Further, the dielectric constant and the Q value can be improved by adjusting x, y, and z within the aforementioned ranges.

以下、本発明の誘電体磁器組成物の実施例について説明する。
まず、本発明による誘電体磁器組成物の製造方法について説明する。MgTiO、MgTiO、CaTiO及び、Li系ガラスの原料粉末を所定の組成となるように秤量して、これをボールミル等を用いて16時間湿混合し、これを乾燥させた。これらの混合粉末を750〜800℃で仮焼し、この仮焼粉末をボールミル等を用いて20時間湿式粉砕した。この粉砕物を乾燥した後、これにバインダーを加えて混合し、ふるいを用いて造粒した。この造粒粉末に3t/cmの圧力を加えて円柱状に成形し、大気中において850〜1050℃で焼成することにより本発明による材料を得た。
Examples of the dielectric ceramic composition of the present invention will be described below.
First, a method for producing a dielectric ceramic composition according to the present invention will be described. MgTiO 3 , Mg 2 TiO 4 , CaTiO 3, and Li-based glass raw material powder were weighed so as to have a predetermined composition, and this was wet-mixed for 16 hours using a ball mill or the like, and dried. These mixed powders were calcined at 750 to 800 ° C., and this calcined powder was wet-ground for 20 hours using a ball mill or the like. The pulverized product was dried, mixed with a binder, and granulated using a sieve. The granulated powder was formed into a cylindrical shape by applying a pressure of 3 t / cm 2 and fired at 850 to 1050 ° C. in the air to obtain a material according to the present invention.

本発明の誘電体磁器組成物の特性の測定は、前述の誘電体磁器組成物を成形、焼成して評価サンプルを得て行った。この特性の測定は、Hakki&Coleman法により、7〜8GHzにおける比誘電率(εr)とQ値(Qf)を測定した。   The characteristics of the dielectric ceramic composition of the present invention were measured by molding and baking the above-mentioned dielectric ceramic composition to obtain an evaluation sample. This characteristic was measured by measuring the relative dielectric constant (εr) and the Q value (Qf) at 7 to 8 GHz by the Hakki & Coleman method.

図1は、xMgTiO・yMgTiO・zCaTiOにおいて、それぞれの組成のモル比x、y、zを変え、かつ、Li系ガラスの添加量を変えたときの焼結温度、比誘電率(εr)及び、Q値(Qf)を表にまとめたものである。なお、Li系ガラスはSiOが17重量部、CaOが19.7重量部、LiOが12.6重量部、BaOが21.5重量部、Bが29.2重量部のものを用い、試料Noの*印は本発明の範囲外のものであることを示している。
本発明の誘電体磁器組成物は、MgTiOの比率xが69.3≦x≦84.0、MgTiOの比率yが14.1≦y≦30.0、CaTiOの比率zが0.8≦z≦6.1、Li系ガラスの添加量が25重量部〜35重量部の範囲内で、焼結温度が950℃以下、比誘電率が20程度、Q値が10000以上にすることができた。
FIG. 1 shows the sintering temperature and relative dielectric constant of xMgTiO 3 .yMg 2 TiO 4 .zCaTiO 3 when the molar ratio x, y, z of each composition is changed and the addition amount of Li-based glass is changed. (Εr) and Q value (Qf) are summarized in a table. The Li-based glass has 17 parts by weight of SiO 2 , 19.7 parts by weight of CaO, 12.6 parts by weight of Li 2 O, 21.5 parts by weight of BaO, and 29.2 parts by weight of B 2 O 3. Sample No. * indicates that it is outside the scope of the present invention.
In the dielectric ceramic composition of the present invention, the ratio x of MgTiO 3 is 69.3 ≦ x ≦ 84.0, the ratio y of Mg 2 TiO 4 is 14.1 ≦ y ≦ 30.0, and the ratio z of CaTiO 3 is 0.8 ≦ z ≦ 6.1, the amount of Li-based glass added is in the range of 25 parts by weight to 35 parts by weight, the sintering temperature is 950 ° C. or less, the relative dielectric constant is about 20, and the Q value is 10,000 or more. We were able to.

この様に本発明の誘電体磁器組成物は、xの値が69.3≦x≦84.0、yの値が14.1≦y≦30.0、zの値が0.8≦z≦6.1、Li系ガラスの添加量が25重量部〜35重量部の範囲内で、積層タイプの誘電体フィルタ等において望まれる比誘電率17.5〜20.5、Q値が10000以上の特性を得ることができると共に、焼結温度を銀や銅等の融点よりも低い950℃以下とすることができる。   Thus, in the dielectric ceramic composition of the present invention, the value of x is 69.3 ≦ x ≦ 84.0, the value of y is 14.1 ≦ y ≦ 30.0, and the value of z is 0.8 ≦ z. ≦ 6.1, Li-based glass added in the range of 25 parts by weight to 35 parts by weight, dielectric constant of 17.5 to 20.5 desired in laminated type dielectric filters, etc., Q value is 10,000 or more In addition, the sintering temperature can be 950 ° C. or lower, which is lower than the melting point of silver or copper.

本発明の誘電体磁器組成物の特性を説明するための表である。It is a table | surface for demonstrating the characteristic of the dielectric material ceramic composition of this invention.

Claims (2)

一般式xMgTiO・yMgTiO・zCaTiO
と表され、
x、y、zがモル%でそれぞれ、69.3≦x≦84.0、14.1≦y≦30.0、0.8≦z≦6.1の範囲にある組成物100重量部に対して、Li系ガラスを25重量部〜35重量部添加したことを特徴とする誘電体磁器組成物。
General formula xMgTiO 3 · yMg 2 TiO 4 · zCaTiO 3
And
In 100 parts by weight of the composition in which x, y and z are in mol% and are in the ranges of 69.3 ≦ x ≦ 84.0, 14.1 ≦ y ≦ 30.0 and 0.8 ≦ z ≦ 6.1, respectively. On the other hand, a dielectric ceramic composition comprising 25 to 35 parts by weight of Li-based glass added.
前記Li系ガラスの成分は、SiOが17重量部、CaOが19.7重量部、LiOが12.6重量部、BaOが21.5重量部、Bが29.2重量部である請求項1に記載の誘電体磁器組成物。 The components of the Li-based glass are 17 parts by weight of SiO 2 , 19.7 parts by weight of CaO, 12.6 parts by weight of Li 2 O, 21.5 parts by weight of BaO, and 29.2 parts by weight of B 2 O 3. The dielectric ceramic composition according to claim 1, which is a part.
JP2006250468A 2006-09-15 2006-09-15 Dielectric porcelain composition Pending JP2008069056A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006250468A JP2008069056A (en) 2006-09-15 2006-09-15 Dielectric porcelain composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006250468A JP2008069056A (en) 2006-09-15 2006-09-15 Dielectric porcelain composition

Publications (1)

Publication Number Publication Date
JP2008069056A true JP2008069056A (en) 2008-03-27

Family

ID=39290989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006250468A Pending JP2008069056A (en) 2006-09-15 2006-09-15 Dielectric porcelain composition

Country Status (1)

Country Link
JP (1) JP2008069056A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011079719A (en) * 2009-10-09 2011-04-21 Toko Inc Dielectric ceramic composition
US8067324B2 (en) * 2007-11-26 2011-11-29 Elizaveta Arkadievna Nenasheva Low dielectric loss ceramic ferroelectric composite material
CN105985102A (en) * 2015-01-30 2016-10-05 上海光线新材料科技有限公司 Microwave dielectric ceramic material and preparation method thereof
CN110922183A (en) * 2019-11-13 2020-03-27 深圳顺络电子股份有限公司 Preparation method of microwave dielectric sintered powder material, microwave dielectric ceramic and application thereof
CN111004030A (en) * 2019-12-24 2020-04-14 苏州同拓光电科技有限公司 MgTiO (magnesium-titanium-oxide) powder3Microwave-based dielectric ceramic and preparation method thereof
US10892097B2 (en) 2016-03-04 2021-01-12 Tdk Electronics Ag Dielectric ceramic composition, method for the production and use thereof
CN114874005A (en) * 2022-06-10 2022-08-09 安徽理工大学 Temperature-stable magnesium titanate base microwave dielectric composite ceramic and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5130958A (en) * 1974-09-11 1976-03-16 Hitachi Ltd
JPS6114605B2 (en) * 1980-07-30 1986-04-19 Oki Electric Ind Co Ltd
JP2002193662A (en) * 2000-12-27 2002-07-10 Kyocera Corp Dielectric ceramic and its manufacturing method
JP2003002682A (en) * 2001-06-21 2003-01-08 Kyocera Corp Low-softening-point glass and method for producing the same, and low-temperature-sintering ceramic composition
JP2004168579A (en) * 2002-11-19 2004-06-17 Tdk Corp Dielectric porcelain composition and dielectric resonator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5130958A (en) * 1974-09-11 1976-03-16 Hitachi Ltd
JPS6114605B2 (en) * 1980-07-30 1986-04-19 Oki Electric Ind Co Ltd
JP2002193662A (en) * 2000-12-27 2002-07-10 Kyocera Corp Dielectric ceramic and its manufacturing method
JP2003002682A (en) * 2001-06-21 2003-01-08 Kyocera Corp Low-softening-point glass and method for producing the same, and low-temperature-sintering ceramic composition
JP2004168579A (en) * 2002-11-19 2004-06-17 Tdk Corp Dielectric porcelain composition and dielectric resonator

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8067324B2 (en) * 2007-11-26 2011-11-29 Elizaveta Arkadievna Nenasheva Low dielectric loss ceramic ferroelectric composite material
JP2011079719A (en) * 2009-10-09 2011-04-21 Toko Inc Dielectric ceramic composition
CN105985102A (en) * 2015-01-30 2016-10-05 上海光线新材料科技有限公司 Microwave dielectric ceramic material and preparation method thereof
US10892097B2 (en) 2016-03-04 2021-01-12 Tdk Electronics Ag Dielectric ceramic composition, method for the production and use thereof
CN110922183A (en) * 2019-11-13 2020-03-27 深圳顺络电子股份有限公司 Preparation method of microwave dielectric sintered powder material, microwave dielectric ceramic and application thereof
CN110922183B (en) * 2019-11-13 2021-10-19 深圳顺络电子股份有限公司 Preparation method of microwave dielectric sintered powder material, microwave dielectric ceramic and application thereof
CN111004030A (en) * 2019-12-24 2020-04-14 苏州同拓光电科技有限公司 MgTiO (magnesium-titanium-oxide) powder3Microwave-based dielectric ceramic and preparation method thereof
CN111004030B (en) * 2019-12-24 2021-09-07 苏州同拓光电科技有限公司 MgTiO (magnesium-titanium-oxide) powder3Microwave-based dielectric ceramic and preparation method thereof
CN114874005A (en) * 2022-06-10 2022-08-09 安徽理工大学 Temperature-stable magnesium titanate base microwave dielectric composite ceramic and preparation method thereof

Similar Documents

Publication Publication Date Title
JP5554940B2 (en) Low dielectric constant dielectric ceramic composition for low temperature firing
US6270716B1 (en) Process for the production of low-temperature firing ceramic compositions
JP5582406B2 (en) High frequency dielectric ceramic composition and manufacturing method thereof, high frequency dielectric ceramic and manufacturing method thereof, and high frequency circuit element using the same
JPH11310455A (en) Dielectric porcelain composition and ceramic electronic part using the same
JP2007290940A (en) Dielectric porcelain composition and electronic component
JP2008069056A (en) Dielectric porcelain composition
CN109133912B (en) Microwave dielectric ceramic and preparation method thereof
JP2002104870A (en) Dielectric porcelain and laminate
JP2013166687A (en) Dielectric ceramic and electronic component using the same
JP2009007182A (en) Sintering aid for lead-free piezoelectric ceramic, lead-free piezoelectric ceramic, and method for production of the ceramic
JP2007246340A (en) Dielectric ceramic composition
JP3737774B2 (en) Dielectric ceramic composition
JP2007250728A (en) Ceramic laminated device and its fabrication process
TW555719B (en) Dielectric ceramic composition
JP5422329B2 (en) Dielectric porcelain composition
JPWO2006109465A1 (en) Dielectric ceramic composition and high frequency device using the same
JP5527053B2 (en) Dielectric porcelain, dielectric porcelain manufacturing method, and electronic component
KR101849470B1 (en) Low temperature co-fired microwave dielectric ceramics and manufacturing method thereof
JP2003146752A (en) Dielectric ceramic composition
JP4249690B2 (en) High frequency dielectric ceramics and laminates
JP3375450B2 (en) Dielectric porcelain composition
JP3754827B2 (en) High frequency dielectric ceramic composition and laminate
JP4911072B2 (en) Dielectric porcelain composition
JP3905993B2 (en) High frequency dielectric ceramic composition and laminated part using the same
JP2008254950A (en) Dielectric ceramic composition

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090622

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110624

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110705

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110831

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120522

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20121106