JP2008066069A - Vehicular lamp apparatus - Google Patents

Vehicular lamp apparatus Download PDF

Info

Publication number
JP2008066069A
JP2008066069A JP2006241477A JP2006241477A JP2008066069A JP 2008066069 A JP2008066069 A JP 2008066069A JP 2006241477 A JP2006241477 A JP 2006241477A JP 2006241477 A JP2006241477 A JP 2006241477A JP 2008066069 A JP2008066069 A JP 2008066069A
Authority
JP
Japan
Prior art keywords
film
tio
substrate
alloy
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006241477A
Other languages
Japanese (ja)
Inventor
Hironori Shibazaki
洋範 柴崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ichikoh Industries Ltd
Original Assignee
Ichikoh Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ichikoh Industries Ltd filed Critical Ichikoh Industries Ltd
Priority to JP2006241477A priority Critical patent/JP2008066069A/en
Publication of JP2008066069A publication Critical patent/JP2008066069A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vehicular lamp apparatus capable of enhancing the reflectivity of a reflecting film, with respect to the LED light. <P>SOLUTION: The reflecting film is formed with a substrate 1, a plasma-polymerized film 2 which is formed on the top surface of the substrate 1, an alloy film 3 which is formed on the top surface of the plasma-polymerized film 2, a TiO<SB>2</SB>film 4 which is formed on the top surface of the alloy film 3, and a plasma-polymerized film 2 which is formed on the top surface of the TiO<SB>2</SB>film 4. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、車両用ランプ装置に関し、より具体的には、ＬＥＤ（Light Emitting Diode）光に対する反射膜の反射率を高めるための技術に係わる。   The present invention relates to a vehicular lamp device, and more specifically to a technique for increasing the reflectance of a reflective film with respect to LED (Light Emitting Diode) light.

一般に、ＬＥＤ素子を光源とし、ＬＥＤ素子から発せられた光（以下、ＬＥＤ光と略記）を車外方向に反射する反射膜を備える車両用ランプ装置では、反射膜としてＡｌ（アルミニウム）膜が採用されている。
特開２００３−２０７６１１号公報 In general, in an automotive lamp device that uses a LED element as a light source and includes a reflection film that reflects light emitted from the LED element (hereinafter abbreviated as LED light) in the vehicle exterior direction, an Al (aluminum) film is employed as the reflection film. ing.
JP 2003-207611 A

しかしながら、ＬＥＤ光に対するＡｌ膜の反射率は８０％程度であるために、ＬＥＤ光に対する反射膜の反射率をより高めることにより、高輝度、且つ、低消費電力の車両用ランプ装置を提供することが市場的急務となっている。   However, since the reflectance of the Al film with respect to the LED light is about 80%, it is possible to provide a vehicle lamp device with high brightness and low power consumption by further increasing the reflectance of the reflective film with respect to the LED light. Has become a market urgent need.

本発明は、上記課題を解決するためになされたものであり、その目的は、ＬＥＤ光に対する反射膜の反射率を高めることが可能な車両用ランプ装置を提供することにある。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a vehicle lamp device capable of increasing the reflectance of a reflective film with respect to LED light.

本願発明の発明者は、鋭意研究を重ねてきた結果、（１）基板と、基板表面に形成されたプラズマ重合膜と、プラズマ重合膜表面に形成された、Ａｇ（銀）を主成分とし、Ｂｉ（ビスマス）とＡｕ（金）又はＰｄ（パラジウム）とを含有する合金膜と、合金膜表面に形成されたＴｉＯ２（酸化チタン）膜と、ＴｉＯ２膜の表面に形成されたプラズマ重合膜、又は（２）基板と、基板表面に形成されたプラズマ処理膜と、プラズマ処理膜表面に形成された、Ａｇを主成分とし、ＢｉとＡｕ又はＰｄとを含有する合金膜と、合金膜表面に形成されたＴｉＯ２膜と、ＴｉＯ２膜の表面に形成されたプラズマ重合膜、又は（３）基板と、基板表面に形成されたＳｉＮ（窒化シリコン）膜と、ＳｉＮ膜表面に形成された、Ａｇを主成分とし、ＢｉとＡｕ又はＰｄとを含有する合金膜と、合金膜表面に形成されたＴｉＯ２膜と、ＴｉＯ２膜の表面に形成されたプラズマ重合膜、又は（４）基板と、基板表面に形成されたＳｉＮ膜と、ＳｉＮ膜表面に形成された、Ａｇを主成分とし、ＢｉとＡｕ又はＰｄとを含有する合金膜と、合金膜表面に形成されたＴｉＯ２膜と、ＴｉＯ２膜の表面に形成されたＳｉＮ膜により反射膜を形成することにより、ＬＥＤ光に対する反射膜の反射率は９３〜９８［％］程度となり、Ａｌ膜を用いた場合と比較して反射率が大幅に高くなることを知見した。 As a result of intensive research, the inventors of the present invention have (1) a substrate, a plasma polymerized film formed on the surface of the substrate, and Ag (silver) formed on the surface of the plasma polymerized film as a main component. An alloy film containing Bi (bismuth) and Au (gold) or Pd (palladium), a TiO 2 (titanium oxide) film formed on the surface of the alloy film, and a plasma polymerization film formed on the surface of the TiO 2 film Or (2) a substrate, a plasma treatment film formed on the substrate surface, an alloy film containing Ag as a main component and containing Bi and Au or Pd, and an alloy film surface, formed on the plasma treatment film surface and TiO 2 film formed, a TiO 2 film formed on the surface plasma polymerized film, or (3) and the substrate, SiN formed on the surface of the substrate (silicon nitride) and films were formed on the SiN film surface , Ag as the main component, Bi and alloy film containing the u or Pd, and TiO 2 film formed on the alloy film surface, the plasma polymerization film formed on the surface of the TiO 2 film, or (4) a substrate and, SiN formed on the surface of the substrate and films were formed on the SiN film surface, as a main component Ag, and an alloy film containing Bi and Au or Pd, and TiO 2 film formed on the alloy film surface, formed on the surface of the TiO 2 film It has been found that by forming a reflective film with a SiN film, the reflectance of the reflective film with respect to LED light is about 93 to 98 [%], and the reflectance is significantly higher than when an Al film is used. did.

以下、図面を参照して、本発明の一実施形態となる反射膜の構成について説明する。   Hereinafter, the configuration of a reflective film according to an embodiment of the present invention will be described with reference to the drawings.

本発明の一実施形態となる反射膜は、図１に示すように、プラスチック等により形成された基板１と、基板１の表面上に形成されたヘキサメチルジシロキサンをモノマーとするプラズマ重合膜２と、プラズマ重合膜２の表面上に形成された合金膜３と、合金膜３の表面上に形成されたＴｉＯ２膜と、ＴｉＯ２膜の表面上に形成されたヘキサメチルジシロキサンをモノマーとするプラズマ重合膜２とを備える。また、合金膜３は、Ａｇを主成分とし、ＢｉとＡｕ（又はＰｄ）１〜３［％］とを含有する。このような反射膜を形成する際は、始めに、基板１を真空装置内に配置し、真空装置の内部が１×１０−２［Ｐａ］程度の真空度になるまで排気する。次に、ガス導入管を介して真空装置内部にヘキサメチルジシロキサンを導入し、プラズマ電極にＲＦ（高周波電圧）やＤＣ（直流電圧）を印加することにより、ヘキサメチルジシロキサンを基板１表面にプラズマ重合させ、プラズマ工法により膜厚５０〜７０［ｎｍ］程度のプラズマ重合膜２を基板１の表面に形成する。次に、ガス導入管を介して真空装置内部にＡｒを導入し、真空装置内部の真空度を０．２［Ｐａ］程度にした状態で、スパッタリング処理により膜厚８０〜１５０［ｎｍ］程度の合金膜３をプラズマ重合膜２表面上に形成する。次に、合金膜３表面上にＴｉＯ２膜４を形成する。そして最後に、ガス導入管を介して真空装置内部にヘキサメチルジシロキサンを導入し、プラズマ電極にＲＦやＤＣを印加することにより、ヘキサメチルジシロキサンをＴｉＯ２膜４表面にプラズマ重合させ、プラズマ工法によりＴｉＯ２膜４の表面にプラズマ重合膜２を形成する。 As shown in FIG. 1, a reflective film according to an embodiment of the present invention includes a substrate 1 made of plastic or the like, and a plasma polymerization film 2 made of hexamethyldisiloxane formed on the surface of the substrate 1 as a monomer. An alloy film 3 formed on the surface of the plasma polymerized film 2, a TiO 2 film formed on the surface of the alloy film 3, and hexamethyldisiloxane formed on the surface of the TiO 2 film as monomers. The plasma polymerization film 2 is provided. The alloy film 3 is mainly composed of Ag and contains Bi and Au (or Pd) 1 to 3 [%]. When forming such a reflective film, first, the substrate 1 is placed in a vacuum apparatus, and the interior of the vacuum apparatus is evacuated until the degree of vacuum is about 1 × 10 −2 [Pa]. Next, hexamethyldisiloxane is introduced into the vacuum apparatus through a gas introduction tube, and RF (high frequency voltage) or DC (direct current voltage) is applied to the plasma electrode, so that hexamethyldisiloxane is applied to the surface of the substrate 1. Plasma polymerization is performed, and a plasma polymerization film 2 having a film thickness of about 50 to 70 [nm] is formed on the surface of the substrate 1 by a plasma method. Next, Ar is introduced into the vacuum device through the gas introduction tube, and the film thickness is about 80 to 150 [nm] by sputtering treatment in a state where the degree of vacuum inside the vacuum device is about 0.2 [Pa]. An alloy film 3 is formed on the surface of the plasma polymerization film 2. Next, a TiO 2 film 4 is formed on the surface of the alloy film 3. Finally, hexamethyldisiloxane is introduced into the vacuum device through the gas introduction tube, and RF or DC is applied to the plasma electrode, thereby plasma polymerizing the hexamethyldisiloxane on the surface of the TiO 2 film 4 and plasma. The plasma polymerization film 2 is formed on the surface of the TiO 2 film 4 by a construction method.

以上の説明のように、本発明の一実施形態となる反射膜は、基板１と、基板１の表面上に形成されたプラズマ重合膜２と、プラズマ重合膜２の表面上に形成された合金膜３と、合金膜３の表面上に形成されたＴｉＯ２膜４と、ＴｉＯ２膜４の表面上に形成されたプラズマ重合膜２とにより形成されているので、ＬＥＤ光に対する反射膜の反射率を高めることができる。 As described above, the reflective film according to an embodiment of the present invention includes the substrate 1, the plasma polymerized film 2 formed on the surface of the substrate 1, and the alloy formed on the surface of the plasma polymerized film 2. Since it is formed by the film 3, the TiO 2 film 4 formed on the surface of the alloy film 3, and the plasma polymerization film 2 formed on the surface of the TiO 2 film 4, the reflection of the reflection film with respect to the LED light The rate can be increased.

また、合金膜３中に含まれるＢｉは、大気に触れると酸化ビスマスとなるので、合金膜３の保護膜として機能させることができる。また、合金膜３中に含まれるＡｕ又はＰｄはＡｇの凝集を防ぐので、合金膜３の耐熱性を向上させることができる。また、ＴｉＯ２膜４は、触媒作用で有機物を分解し、合金膜３を構成するＡｇの腐食を防ぐので、合金膜３の保護膜として機能する。また、プラズマ重合膜２は、基板１の汚れや金型に付着した油から合金膜３を保護するようになるので、合金膜３が腐食することを抑制できる。 In addition, Bi contained in the alloy film 3 becomes bismuth oxide when exposed to the atmosphere, so that it can function as a protective film for the alloy film 3. Moreover, since Au or Pd contained in the alloy film 3 prevents Ag from aggregating, the heat resistance of the alloy film 3 can be improved. Further, the TiO 2 film 4 functions as a protective film for the alloy film 3 because it decomposes organic substances by catalytic action and prevents corrosion of Ag constituting the alloy film 3. Moreover, since the plasma polymerized film 2 protects the alloy film 3 from dirt on the substrate 1 and oil adhering to the mold, the alloy film 3 can be prevented from corroding.

なお、ＴｉＯ２膜４の膜厚が６０［ｎｍ］である場合、図２に示すように、反射膜の反射特性がＬＥＤ素子の発光ピークと一致しないのに対し、ＴｉＯ２膜４の膜厚が７０［ｎｍ］である場合には、図３に示すように、反射膜の反射特性がＬＥＤ素子の発光ピークと一致するようになるので、ＴｉＯ２膜４の膜厚は７０〜８０［ｎｍ］程度の大きさであることが望ましい。またこのような構成によれば、反射膜はＬＥＤ素子の発光特性に合った反射特性を有するので、反射板はやや青みのある色となる。また、図４に示すように、合金膜３中におけるＢｉの含有率が大きくなると反射膜の反射率は低下するので、合金膜３中におけるＢｉの含有率は０．５〜３［％］の範囲内であることが望ましい。 Incidentally, when the thickness of the TiO 2 film 4 is 60 [nm], as shown in FIG. 2, while the reflection characteristic of the reflective film does not match the emission peak of the LED elements, the thickness of the TiO 2 film 4 3 is 70 [nm], as shown in FIG. 3, the reflection characteristics of the reflective film coincide with the light emission peak of the LED element, so that the thickness of the TiO 2 film 4 is 70 to 80 [nm]. It is desirable that the size be approximately equal. Moreover, according to such a structure, since a reflecting film has the reflective characteristic suitable for the light emission characteristic of an LED element, a reflecting plate becomes a slightly bluish color. Further, as shown in FIG. 4, when the Bi content in the alloy film 3 increases, the reflectance of the reflective film decreases. Therefore, the Bi content in the alloy film 3 is 0.5 to 3%. It is desirable to be within the range.

また、本実施形態では、基板１の表面上にプラズマ重合膜２を形成したが、プラズマ処理によって基板１表面をクリーニングすることにより、図５に示すように、基板１の表面上にプラズマ処理層５を形成してもよい。このような構成によれば、合金膜３を腐食させる物質をクリーニング処理によって除去することができるので、合金膜３の組成を安定的に保つことができる。また、溶媒を用いることなくドライ環境でクリーニング処理を行うので、環境問題の発生や爆発の恐れを回避することができる。   In the present embodiment, the plasma polymerized film 2 is formed on the surface of the substrate 1. However, by cleaning the surface of the substrate 1 by plasma processing, a plasma processing layer is formed on the surface of the substrate 1 as shown in FIG. 5 may be formed. According to such a configuration, since the substance that corrodes the alloy film 3 can be removed by the cleaning process, the composition of the alloy film 3 can be kept stable. Further, since the cleaning process is performed in a dry environment without using a solvent, it is possible to avoid the occurrence of environmental problems and the risk of explosion.

また、本実施形態では、基板１の表面上にプラズマ重合膜２を形成したが、窒素雰囲気下で基板１表面にＳｉ（シリコン）をスパッタリング処理することにより、図６に示すように、基板１の表面上にＳｉＮ膜６を合金膜３の保護膜として形成してもよい。またこの場合には、図７に示すように、最表面のプラズマ重合膜を同様のＳｉＮ膜６としてもよい。   Further, in the present embodiment, the plasma polymerized film 2 is formed on the surface of the substrate 1, but by sputtering Si (silicon) on the surface of the substrate 1 in a nitrogen atmosphere, as shown in FIG. The SiN film 6 may be formed as a protective film for the alloy film 3 on the surface. In this case, as shown in FIG. 7, the plasma polymerization film on the outermost surface may be a similar SiN film 6.

以上、本発明者によってなされた発明を適用した実施の形態について説明したが、この実施の形態による本発明の開示の一部をなす論述及び図面により本発明は限定されることはない。すなわち、上記実施の形態に基づいて当業者等によりなされる他の実施の形態、実施例及び運用技術等は全て本発明の範疇に含まれることは勿論であることを付け加えておく。   As mentioned above, although the embodiment to which the invention made by the present inventor is applied has been described, the present invention is not limited by the description and the drawings that form part of the disclosure of the present invention according to this embodiment. That is, it should be added that other embodiments, examples, operation techniques, and the like made by those skilled in the art based on the above embodiments are all included in the scope of the present invention.

本発明の一実施形態となる反射膜の構成を示す断面図である。It is sectional drawing which shows the structure of the reflecting film used as one Embodiment of this invention. ＴｉＯ２膜の膜厚が６０［ｎｍ］である場合における反射膜の反射率とＬＥＤ素子の発光ピークの関係を示すスペクトル図である。It is a spectrum diagram showing the relationship between the emission peak of the reflectance and the LED element of the reflective film in the case where the film thickness of the TiO 2 film is 60 [nm]. ＴｉＯ２膜の膜厚が７０［ｎｍ］である場合における反射膜の反射率とＬＥＤ素子の発光ピークの関係を示すスペクトル図である。It is a spectrum diagram showing the relationship between the emission peak of the reflectance and the LED element of the reflective film in the case where the film thickness of the TiO 2 film is 70 [nm]. 合金膜中におけるＢｉの含有率の変化に伴う反射膜の反射率の変化を示す図である。It is a figure which shows the change of the reflectance of a reflecting film accompanying the change of the content rate of Bi in an alloy film. 本発明の他の実施形態となる反射膜の構成を示す断面図である。It is sectional drawing which shows the structure of the reflecting film used as other embodiment of this invention. 本発明の他の実施形態となる反射膜の構成を示す断面図である。It is sectional drawing which shows the structure of the reflecting film used as other embodiment of this invention. 本発明の他の実施形態となる反射膜の構成を示す断面図である。It is sectional drawing which shows the structure of the reflecting film used as other embodiment of this invention.

符号の説明Explanation of symbols

１：基板
２：プラズマ重合膜
３：合金膜
４：ＴｉＯ２膜
５：プラズマ処理層
６：ＳｉＮ膜 1: Substrate 2: Plasma polymerized film 3: Alloy film 4: TiO 2 film 5: Plasma treatment layer 6: SiN film

Claims (4)

ＬＥＤ素子を光源とし、当該ＬＥＤ素子から発せられた光を車外方向に反射する反射膜を備える車両用ランプ装置において、
前記反射膜が、基板と、当該基板表面に形成されたプラズマ重合膜と、当該プラズマ重合膜表面に形成された、Ａｇを主成分とし、ＢｉとＡｕ又はＰｄとを含有する合金膜と、当該合金膜表面に形成されたＴｉＯ２膜と、当該ＴｉＯ２膜表面に形成されたプラズマ重合膜とを備えることを特徴とする車両用ランプ装置。 In a vehicular lamp device including a reflective film that uses an LED element as a light source and reflects light emitted from the LED element in a vehicle exterior direction,
The reflective film includes a substrate, a plasma polymerization film formed on the surface of the substrate, an alloy film containing Ag as a main component and containing Bi and Au or Pd formed on the surface of the plasma polymerization film, A vehicle lamp device comprising: a TiO 2 film formed on an alloy film surface; and a plasma polymerization film formed on the TiO 2 film surface. ＬＥＤ素子を光源とし、当該ＬＥＤ素子から発せられた光を車外方向に反射する反射膜を備える車両用ランプ装置において、
前記反射膜が、基板と、当該基板表面に形成されたプラズマ処理膜と、当該プラズマ処理膜表面に形成された、Ａｇを主成分とし、ＢｉとＡｕ又はＰｄとを含有する合金膜と、当該合金膜表面に形成されたＴｉＯ２膜と、当該ＴｉＯ２膜表面に形成されたプラズマ重合膜とを備えることを特徴とする車両用ランプ装置。 In a vehicular lamp device including a reflective film that uses an LED element as a light source and reflects light emitted from the LED element in a vehicle exterior direction,
The reflective film is a substrate, a plasma treatment film formed on the surface of the substrate, an alloy film mainly containing Ag and containing Bi and Au or Pd formed on the surface of the plasma treatment film, A vehicle lamp device comprising: a TiO 2 film formed on an alloy film surface; and a plasma polymerization film formed on the TiO 2 film surface. ＬＥＤ素子を光源とし、当該ＬＥＤ素子から発せられた光を車外方向に反射する反射膜を備える車両用ランプ装置において、
前記反射膜が、基板と、当該基板表面に形成されたＳｉＮ膜と、当該ＳｉＮ膜表面に形成された、Ａｇを主成分とし、ＢｉとＡｕ又はＰｄとを含有する合金膜と、当該合金膜表面に形成されたＴｉＯ２膜と、当該ＴｉＯ２膜の表面に形成されたプラズマ重合膜とを備えることを特徴とする車両用ランプ装置。 In a vehicular lamp device including a reflective film that uses an LED element as a light source and reflects light emitted from the LED element in a vehicle exterior direction,
The reflective film is a substrate, a SiN film formed on the surface of the substrate, an alloy film containing Ag as a main component and containing Bi and Au or Pd formed on the surface of the SiN film, and the alloy film. and TiO 2 film formed on the surface, a vehicle lamp system, characterized in that it comprises a plasma polymerized film formed on the surface of the TiO 2 film. ＬＥＤ素子を光源とし、当該ＬＥＤ素子から発せられた光を車外方向に反射する反射膜を備える車両用ランプ装置において、
前記反射膜が、基板と、当該基板表面に形成されたＳｉＮ膜と、当該ＳｉＮ膜表面に形成された、Ａｇを主成分とし、ＢｉとＡｕ又はＰｄとを含有する合金膜と、当該合金膜表面に形成されたＴｉＯ２膜と、当該ＴｉＯ２膜の表面に形成されたＳｉＮ膜とを備えることを特徴とする車両用ランプ装置。 In a vehicular lamp device including a reflective film that uses an LED element as a light source and reflects light emitted from the LED element in a vehicle exterior direction,
The reflective film is a substrate, a SiN film formed on the surface of the substrate, an alloy film containing Ag as a main component and containing Bi and Au or Pd formed on the surface of the SiN film, and the alloy film. and TiO 2 film formed on the surface, a vehicle lamp system, characterized in that it comprises a SiN film formed on the surface of the TiO 2 film.
JP2006241477A 2006-09-06 2006-09-06 Vehicular lamp apparatus Pending JP2008066069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006241477A JP2008066069A (en) 2006-09-06 2006-09-06 Vehicular lamp apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006241477A JP2008066069A (en) 2006-09-06 2006-09-06 Vehicular lamp apparatus

Publications (1)

Publication Number Publication Date
JP2008066069A true JP2008066069A (en) 2008-03-21

Family

ID=39288610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006241477A Pending JP2008066069A (en) 2006-09-06 2006-09-06 Vehicular lamp apparatus

Country Status (1)

Country Link
JP (1) JP2008066069A (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08220313A (en) * 1995-02-17 1996-08-30 Ricoh Co Ltd Mirror
JPH09222508A (en) * 1996-02-19 1997-08-26 Ricoh Co Ltd Mirror
JPH11221517A (en) * 1997-12-04 1999-08-17 Ichikoh Ind Ltd Resin part with reflecting film and its production
JP2003229006A (en) * 2002-02-01 2003-08-15 Stanley Electric Co Ltd Lighting fixture
JP2004139712A (en) * 2002-08-20 2004-05-13 Kobe Steel Ltd Reflection film and translucent reflection film for optical information recording medium, optical information recording medium, and sputtering target for optical information recording medium
JP2004309525A (en) * 2003-04-02 2004-11-04 Ulvac Japan Ltd Method of manufacturing colored reflection film and film deposition material used therein
JP2006222037A (en) * 2005-02-14 2006-08-24 Ichikoh Ind Ltd Components for vehicle

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08220313A (en) * 1995-02-17 1996-08-30 Ricoh Co Ltd Mirror
JPH09222508A (en) * 1996-02-19 1997-08-26 Ricoh Co Ltd Mirror
JPH11221517A (en) * 1997-12-04 1999-08-17 Ichikoh Ind Ltd Resin part with reflecting film and its production
JP2003229006A (en) * 2002-02-01 2003-08-15 Stanley Electric Co Ltd Lighting fixture
JP2004139712A (en) * 2002-08-20 2004-05-13 Kobe Steel Ltd Reflection film and translucent reflection film for optical information recording medium, optical information recording medium, and sputtering target for optical information recording medium
JP2004309525A (en) * 2003-04-02 2004-11-04 Ulvac Japan Ltd Method of manufacturing colored reflection film and film deposition material used therein
JP2006222037A (en) * 2005-02-14 2006-08-24 Ichikoh Ind Ltd Components for vehicle

Similar Documents

Publication Publication Date Title
KR100546662B1 (en) Organic electroluminescence device
US6906863B2 (en) Lamp reflector and reflector
US20070241668A1 (en) Organic, Eelectro-Optical Element With Increased Decoupling Efficiency
US6876005B2 (en) Light emitting diode having an adhesive layer
JPH10125463A (en) Organic electroluminescent element, crystal lighting system, display device, and manufacture of organic electroluminescent element
JP2009004275A (en) Manufacturing method of surface light emitter and surface light emitter
JP5065776B2 (en) Surface emitter
CN101034727A (en) Nitride semiconductor light emitting device
JP5719179B2 (en) Reflective film laminate
US10675842B2 (en) Transparent electrode and organic electronic device including the same
JP2017077684A (en) Gas barrier film, transparent conductive member, and organic electroluminescent element
JP2017079098A (en) Optical substrate, transparent conductive member, and organic electroluminescent element
JP2008147511A (en) Semiconductor light emitting device and its manufacturing method
US7237920B2 (en) Organic electroluminescent light source with anti-reflection coating
JP2008066069A (en) Vehicular lamp apparatus
JP4031285B2 (en) Lamp reflectors and reflectors
JP3254323B2 (en) Organic EL device
JP2006010930A (en) High reflectance mirror
JP6428599B2 (en) Organic electroluminescence device and method for manufacturing the same
JP2008066068A (en) Vehicular lamp apparatus
JP2009231568A (en) Led light source
JP2004228555A (en) Light emitting diode having reflection preventing layer and manufacturing method therefor
KR100581645B1 (en) Polymer-Type Organic Electroluminescence Display Device
US20150153487A1 (en) Wavelength-converting device
CN201146194Y (en) LED capable of filtering ultraviolet waveband

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081104

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100421

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100427

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101005