CN201146194Y - LED capable of filtering ultraviolet waveband - Google Patents
LED capable of filtering ultraviolet waveband Download PDFInfo
- Publication number
- CN201146194Y CN201146194Y CNU2007201822206U CN200720182220U CN201146194Y CN 201146194 Y CN201146194 Y CN 201146194Y CN U2007201822206 U CNU2007201822206 U CN U2007201822206U CN 200720182220 U CN200720182220 U CN 200720182220U CN 201146194 Y CN201146194 Y CN 201146194Y
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- light
- emitting diode
- diode chip
- backlight unit
- encapsulation
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Abstract
The utility model relates to a light emitting diode for filtrating ultraviolet bands, which at least comprises a bracket, a loading part, a light emitting diode chip, a film filter and an encapsulation part. The loading part is arranged on one end of the bracket, the light emitting diode chip is arranged on the loading part, the encapsulation part covers the partial position on the bracket with the loading part and the light emitting diode chip, the encapsulation part is used for fixing the interrelation among the loading part, the light emitting diode chip and the bracket, wherein, the film filter is arranged on the surface of the light emitting diode chip, and the film filter can filter ultraviolet bands in the light when the light emitting diode chip emits the light.
Description
Technical field
The utility model relates to a kind of light-emitting diode, but particularly a kind of light-emitting diode of ultraviolet ray filtering wave band.
Background technology
Traditional bulb type (Lamp type, also be called bullet cut) in the package application of High Power LED (light emittingdiodes), usually with epoxy resin (Epoxy resins) as the outer field glue material of encapsulation, in order to being connected of fixing light-emitting diode and support.Because the price of this epoxy resin is quite cheap, structure after the encapsulation is also quite firm, quite be subjected to the liking of encapsulation industry of light-emitting diode, yet, because (Ultraviolet light, wave band UV), the wave band of ultraviolet light can cause the carbonization of encapsulation outer (being epoxy resin) to contain ultraviolet light in the light that light-emitting diode sent, produce sallow phenomenon in outer the going up of encapsulation, reduce the transparency of the outer institute of encapsulation tool own.So, the light of light-emitting diode just can't radiate away in epoxy resin effectively, may cause epoxy resin to lose its transparency the most at last, and can't transmitted ray.
Therefore, industry just changes silica gel (Silicone) the glue material not influenced by the ultraviolet light wave band, come the encapsulation skin of substituted epoxy resin as light-emitting diode, because silica gel is firm not as epoxy resin, the cost that adds silica gel is far beyond the epoxy resin costliness, makes many dealers still must seek more suitably solution to reduce the outer field cost of encapsulation.
The utility model content
Therefore, but the purpose of this utility model provides a kind of light-emitting diode of ultraviolet ray filtering wave band, in order to the filtering ultraviolet wave band harmful to the encapsulation material, promotes the outer field life-span of encapsulation, reduces the outer field cost of encapsulation.
For reaching above-mentioned purpose, but propose a kind of light-emitting diode of ultraviolet ray filtering wave band, comprise a support, supporting part, light-emitting diode chip for backlight unit and encapsulation at least.Supporting part is arranged at an end of support, and light-emitting diode chip for backlight unit is arranged on the supporting part, and encapsulation is in an end of support tool light-emitting diode chip for backlight unit, coats and fixedly supporting part, light-emitting diode chip for backlight unit and support.Wherein the surface of light-emitting diode chip for backlight unit is provided with a filter coating, when filter coating externally sends a light in light-emitting diode chip for backlight unit, filters the ultraviolet wave band in the light.
Another aspect of the present utility model in addition, but for a kind of light-emitting diode of ultraviolet ray filtering wave band is provided, comprise a support, supporting part, light-emitting diode chip for backlight unit and encapsulation at least.Supporting part is arranged at an end of support, light-emitting diode chip for backlight unit is arranged on the supporting part, its surface is provided with a coating layer that is transparence, the surface of coating layer is provided with a filter coating, encapsulation is in an end of support tool light-emitting diode chip for backlight unit, coats and the fixing annexation of supporting part, light-emitting diode chip for backlight unit and support.When light-emitting diode chip for backlight unit externally sent a light, the ultraviolet wave band in its light can be filtered by filter coating.
So, external when luminous when light-emitting diode chip for backlight unit, the encapsulation set by the material of epoxy resin just is unlikely to quick aging, and therefore reduces its light-permeable, promotes the life-span of light-emitting diode itself.
For enabling further to understand feature of the present utility model and technology contents, see also following about detailed description of the present utility model and accompanying drawing, yet appended graphic only provide with reference to and the explanation usefulness, be not to be used for the utility model is limited.
Description of drawings
For allowing above-mentioned and other purpose of the present utility model, feature, advantage and embodiment can become apparent appended graphic being described in detail as follows:
The schematic appearance of Fig. 1 the utility model light-emitting diode.
The generalized section of light-emitting diode chip for backlight unit among Fig. 2 the utility model first embodiment.
The generalized section of light-emitting diode chip for backlight unit among Fig. 3 the utility model second embodiment.
Wherein, Reference numeral:
1: light-emitting diode 20: supporting part
10: support 30: light-emitting diode chip for backlight unit
103: lead 60: coating layer
Embodiment
Below will clearly demonstrate spirit of the present utility model with graphic and detailed description, as the person skilled in the art after understanding preferred embodiment of the present utility model, when can be by the technology of the utility model institute teaching, change and modification, it does not break away from spirit of the present utility model and scope.
But the utility model discloses a kind of light-emitting diode of ultraviolet ray filtering wave band, mention by one first embodiment, see also as shown in Figures 1 and 2, wherein Fig. 1 is the schematic appearance of the utility model light-emitting diode, and Fig. 2 schematic appearance of the light-emitting diode chip for backlight unit 30 among first embodiment for this reason, light-emitting diode 1 comprises a support 10, supporting part 20, light-emitting diode chip for backlight unit 30, filter coating 31 and encapsulation 40 at least.Support 10 is made by metal material, have first pin 101 and second pin 102, in order to link to each other with interlock circuit, and supporting part 20 also is called the bowl cup, usually be coated on the end of first pin 101 by an elargol layer, and in order to place above-mentioned light-emitting diode chip for backlight unit 30 (LED chip), the surface of light-emitting diode chip for backlight unit 30 is provided with a filter coating 31 (UV filter), the mode that filter coating 31 is with sputter (Sputtering) or evaporation (Evaporation) forms a rete in the surface of light-emitting diode chip for backlight unit 30, this filter coating 31 is a kind of oxide (as: titanium dioxide), it is lower than the wave band (as: blue white light wave band) of short wave ultraviolet, can be when light-emitting diode chip for backlight unit 30 externally to send a light, the ultraviolet wave band that is comprised in its light is blocked in reflection.
And light-emitting diode chip for backlight unit 30 can connect second pin 102 by a lead 103, it is formed is electrically connected, but light-emitting diode chip for backlight unit 30 also not necessarily need be connected in the mode of lead 103 with second pin 102, still mode that can eutectic (Eutectic reaction) is reached electrical connection, last be coated on the some of support 10 with the encapsulation 40 of light-permeable again in order to installing supporting part 20 and light-emitting diode chip for backlight unit 30, and specifically, therefore encapsulation 40 fixes the supporting part 20 on first pin 101, the annexation of the light-emitting diode chip for backlight unit 30 and first pin 101, and the annexation of fixing 102 of first pin 101 and second pins.These encapsulation 40 employed materials are a kind of colloid in order to encapsulation, can be epoxy resin (Epoxy resins), silica gel (silicon) or material that both mix mutually, or contain the glue material (for a kind of for second pin 102 and the light-emitting diode chip for backlight unit 30 mutually electric modes that connect) of conducting metal, make light-emitting diode chip for backlight unit 30 when encapsulation 40 inscattering light, ultraviolet wave band in the light can be filtered, and can't be sent, so, the unlikely encapsulation 40 that makes causes carbonization, influences the light transmittance of encapsulation 40.
As for each layer structure in the light-emitting diode chip for backlight unit 30, as: P utmost point layer (P-electrode), N utmost point layer (N-electrode), P type gallium nitride layer (P-Gan), multiple quantum well structure (Multiple Quantum Well, MQW), each hierarchical sequence and the effect of n type gallium nitride layer (N-Gan) and substrate layer (substrate), because it has been known technology, it is not emphasis of the present utility model, therefore, just in the utility model, do not give unnecessary details in detail.
Wherein needing this, one what carry is that Fig. 3 is the schematic appearance of the light-emitting diode chip for backlight unit among second embodiment again.Filter coating 31 described in the utility model is not limited to directly be arranged at the surface of light-emitting diode chip for backlight unit 30, any coating layer 60 (as: glass, light transmission piece) that is arranged at light-emitting diode chip for backlight unit 30 surfaces, the medium that can pass through for the light of 30 scatterings of light-emitting diode chip for backlight unit, all might be coated with above-mentioned filter coating 31, the light that makes 30 scatterings of light-emitting diode chip for backlight unit, but the ultraviolet wave band that no longer has carbonization encapsulation 40.
Certainly; the utility model also can have other various embodiments; under the situation that does not deviate from the utility model spirit and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the utility model, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the utility model.
Claims (9)
1. but the light-emitting diode of a ultraviolet ray filtering wave band is characterized in that, comprises at least:
One support;
One supporting part is arranged on this support;
One light-emitting diode chip for backlight unit is arranged on this supporting part, in order to externally to emit beam;
One filter coating is arranged at the surface of this light-emitting diode chip for backlight unit, in order to filter the ultraviolet wave band in this light: and
One encapsulation coats this support in order to the part position of this supporting part, this light-emitting diode chip for backlight unit to be set.
2. light-emitting diode according to claim 1, wherein this filter coating is the rete that evaporation or sputter are formed at this light-emitting diode chip for backlight unit surface, and this rete is the oxide material that is lower than ultraviolet wave band.
3. light-emitting diode according to claim 1, wherein this encapsulation is an epoxy resin or a silica gel material wherein.
4. light-emitting diode according to claim 1, wherein this encapsulation material that to be silica gel mix mutually with epoxy resin.
5. but the light-emitting diode of a ultraviolet ray filtering wave band is characterized in that, comprises at least:
One support;
One supporting part is arranged on this support;
One light-emitting diode chip for backlight unit is arranged on this supporting part, in order to externally to emit beam;
One coating layer is transparence, is arranged at the surface of this light-emitting diode chip for backlight unit;
One filter coating is arranged on this coating layer, filters the ultraviolet wave band in this light: and
One encapsulation coats this support in order to the part position of this supporting part, this light-emitting diode chip for backlight unit to be set.
6. light-emitting diode according to claim 5, wherein this filter coating is the rete that evaporation or sputter are formed at this light-emitting diode chip for backlight unit surface, and this rete is the oxide material that is lower than ultraviolet wave band.
7. light-emitting diode according to claim 5, wherein this encapsulation is an epoxy resin or a silica gel material wherein.
8. light-emitting diode according to claim 5, wherein this encapsulation material that to be silica gel mix mutually with epoxy resin.
9. light-emitting diode according to claim 5, wherein this coating layer be a glass substance or light transmission piece one of them.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201822206U CN201146194Y (en) | 2007-10-24 | 2007-10-24 | LED capable of filtering ultraviolet waveband |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201822206U CN201146194Y (en) | 2007-10-24 | 2007-10-24 | LED capable of filtering ultraviolet waveband |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201146194Y true CN201146194Y (en) | 2008-11-05 |
Family
ID=40083079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007201822206U Expired - Fee Related CN201146194Y (en) | 2007-10-24 | 2007-10-24 | LED capable of filtering ultraviolet waveband |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201146194Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937959A (en) * | 2010-08-12 | 2011-01-05 | 武汉华灿光电有限公司 | Light-emitting diode with light filtering film and manufacturing method thereof |
| CN102460745A (en) * | 2009-06-17 | 2012-05-16 | 欧司朗光电半导体有限公司 | Optoelectronic semiconductor component |
-
2007
- 2007-10-24 CN CNU2007201822206U patent/CN201146194Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102460745A (en) * | 2009-06-17 | 2012-05-16 | 欧司朗光电半导体有限公司 | Optoelectronic semiconductor component |
| CN102460745B (en) * | 2009-06-17 | 2015-04-22 | 欧司朗光电半导体有限公司 | Optoelectronic semiconductor component |
| CN101937959A (en) * | 2010-08-12 | 2011-01-05 | 武汉华灿光电有限公司 | Light-emitting diode with light filtering film and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081105 Termination date: 20141024 |
|
| EXPY | Termination of patent right or utility model |