JP2008060448A - Apparatus and method for wiping print mask - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide: an apparatus for wiping print mask which can easily remove a resin paste remaining on a print mask in printing a resin layer such as a buffer layer; and to provide a method for wiping print mask. <P>SOLUTION: The apparatus for wiping print mask wipes a resin paste 11r remaining on a print mask 10 for printing a resin layer on a substrate. The apparatus for wiping print mask has a holder, a scraper SC, and a wiper H. The holder holds the print mask with one surface of the print mask down, where the one surface is faced to the side of the substrate. The scraper scrapes off the resin paste remaining on the other surface of the print mask. The wiper is pushed against the print mask so as to make contact with a predetermined area from the one surface side of the print mask, slides on the one surface side of the print mask, and wipes the resin paste from the one surface side of the print mask. Here, the scraper and the wiper are composed to move in synchronism with each other so that the scraper scrapes off the resin paste in a predetermined area. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a printing mask wiping device and a wiping method, and in particular, after using a printing mask for printing an insulating layer constituting a semiconductor device, a resin paste attached to the printing mask is wiped from the printing mask. The present invention relates to a wiping device and a method thereof.

  The demand for downsizing, thinning, and weight reduction of portable electronic devices such as digital video cameras, digital mobile phones, and notebook personal computers is increasing. While an electronic circuit device in which such a semiconductor device is mounted on a printed wiring board has been realized by 70% reduction year by year, how can the component mounting density on the mounting substrate (printed wiring substrate) be improved? Has been studied and developed as an important issue.

  For example, as a package form of a semiconductor device, a transition from a lead insertion type such as DIP (Dual Inline Package) to a surface mounting type is performed, and furthermore, bumps (projection electrodes) made of solder, gold, or the like are provided on a pad electrode of a semiconductor chip A flip-chip mounting method has been developed in which a face-down connection is made to the wiring board via bumps.

Furthermore, development is progressing into a package having a complicated form called a SiP (system in package) incorporating a passive element such as an inductance and a capacitor and incorporating a matching circuit and a filter.
For example, Patent Document 1 discloses a configuration of the above-described SiP-type semiconductor device.

  For example, as a method for manufacturing an active element embedded wafer level SiP, an active element is mounted on a substrate and embedded with an insulating layer made of a photosensitive resin, the insulating layer is patterned, and the active element is formed by electrolytic plating of Cu or the like. A wiring to be connected is formed, and a multi-layer SiP is formed by forming a rewiring layer embedded in the insulating layer by laminating the insulating layer and the wiring in multiple layers.

  Here, if an insulating layer made of a resin and a wiring including a Cu layer are laminated, the wafer is warped. In order to reduce the warpage of the wafer, it is effective to form the insulating layer with a photosensitive resin and remove the insulating layer present in the scribe line when patterning.

  In addition, when the above-described SiP is mounted on a mounting substrate or the like, a buffer layer for stress relaxation is provided on the rewiring of the SiP in order to prevent the SiP from being destroyed by the stress generated between the mounting substrate and the SiP. The formed structure.

The buffer layer is generally formed by printing using a printing mask. For example, the buffer layer is formed by embedding a conductive post having a height of 120 μm and printing the entire surface.
However, full-surface printing increases the above-described warpage of the wafer, causing an adsorption error due to handling of the manufacturing apparatus in the next process, which may cause driving stoppage or damage of the manufacturing apparatus.

  Alternatively, printing of a small amount of resin in gap printing can be repeated until a required film thickness is obtained. However, when printing is performed several times, there is a problem that the resin gradually flows into the scribe line due to the problem of alignment accuracy, and the productivity is poor, so that it is not suitable for mass production.

In the above printing, a frame portion is provided on the printing mask so as not to be printed on the scribe line.
Here, when the buffer layer is printed using a printing mask having a frame portion and the printing mask is removed from the wafer, a part of the resin (residual paste) serving as the buffer layer is printed on the printing mask. It remains around the side surface of the frame portion of the mask and part of the surface in contact with the wafer.
Therefore, it is necessary to clean the printing mask every time printing is performed and completely remove the residual paste.
JP 2003-124236 A

  An object of the present invention is to provide a printing mask wiping device and a wiping method capable of easily removing a resin paste remaining on a printing mask during printing of a resin layer such as a buffer layer.

  The printing mask wiping device of the present invention is a printing mask wiping device for wiping off a resin paste remaining on a printing mask for printing a resin layer on a printing material, and the printing is directed to the printing material side during printing. A holding part for holding the printing mask with one side of the printing mask facing down, a scraper for scraping the resin paste remaining on the other side of the printing mask from the printing mask, and the printing A wiping portion that is pressed so as to come into contact with a predetermined region from the one surface side of the mask, slides on the one surface, and wipes the resin paste from the one surface side of the printing mask; And the scraper and the wiping portion move synchronously so that the scraping position of the resin paste of the scraper is within the predetermined region. And features.

The above-described wiping device for a printing mask of the present invention is a wiping device for a printing mask for wiping off a resin paste remaining on a printing mask for printing a resin layer on a printing material, and includes a holding portion, a scraper, and a wiping portion.
The holding unit holds the printing mask with one surface of the printing mask directed to the printing material side during printing facing downward.
The scraper scrapes off the resin paste remaining on the other surface of the printing mask from the printing mask.
The wiping portion is pressed so as to come into contact with a predetermined region from one surface side of the printing mask, slides on one surface, and wipes the resin paste from one surface side of the printing mask.
Here, the scraper and the wiping part move in synchronization so that the scraping position of the resin paste of the scraper falls within a predetermined region.

  The printing mask wiping method of the present invention is a printing mask wiping method for wiping off a resin paste remaining on a printing mask for printing a resin layer on a printing material, the printing being directed toward the printing material at the time of printing Holding the printing mask with one side of the printing mask facing down, scraping off the resin paste remaining on the other side of the printing mask with a scraper, and the one of the printing masks Wiping the wiping portion so as to come into contact with a predetermined region from the surface side, sliding on the one surface, and wiping the resin paste from the one surface side of the printing mask. Scraping off the resin paste from the printing mask by the scraper, and wiping the resin paste from the one surface side of the printing mask. In step, as scraping position of the resin paste of the scraper becomes the predetermined area, and wherein the moving in synchronization with the wiping unit and the scraper.

The printing mask wiping method of the present invention is a printing mask wiping method for wiping off a resin paste remaining on a printing mask for printing a resin layer on a substrate.
First, the printing mask is held with one side of the printing mask directed toward the substrate during printing facing downward.
Next, scrape off the resin paste remaining on the other surface of the printing mask with a scraper, and press the wiping portion so as to come into contact with the predetermined area from the one surface side of the printing mask, The resin paste is wiped from one side of the printing mask by sliding on the surface.
Here, when scraping off the resin paste from the printing mask by the scraper and wiping the resin paste from one side of the printing mask, the scraper scraping position of the resin paste is within a predetermined region. In this way, the scraper and the wiping part are moved synchronously.

  The printing mask wiping device of the present invention scrapes off the resin paste remaining on the printing mask during printing of the resin layer such as the buffer layer from many sides of the printing mask and synchronously wipes it from one side. Thus, the resin paste remaining on the printing mask can be easily removed.

  The method for wiping off the printing mask of the present invention involves scraping off the resin paste remaining on the printing mask during printing of a resin layer such as a buffer layer from the other side of the printing mask, and synchronizing one side of the surface. Therefore, the resin paste remaining on the printing mask can be easily removed.

  Hereinafter, embodiments of a wiping device and a wiping method for a printing mask according to the present invention will be described with reference to the drawings.

First, a semiconductor device manufactured by using a printing mask wiping device and a wiping method according to this embodiment will be described.
FIG. 1 is a cross-sectional view of the SiP-type semiconductor device according to the present embodiment.
For example, a base insulating film 21 made of silicon oxide is formed on the silicon substrate 20. On the base insulating film 21, for example, a first semiconductor chip 24 and a second semiconductor chip 25 having a circuit surface on which active elements are formed are mounted.
The plate thickness of the first semiconductor chip 24 and the second semiconductor chip 25 is, for example, about 25 to 50 μm.

The first semiconductor chip 24 has a configuration in which a pad 24b is formed on the circuit surface of the semiconductor body portion 24a, and an area excluding the pad 24b is covered with a protective layer 24c such as silicon oxide. That is, it is mounted such that the formation surface of the pad 24b faces the upper surface.
The second semiconductor chip 25 has the same configuration as that of the first semiconductor chip 24, and a pad 25b is formed on the circuit surface of the semiconductor body portion 25a, and a region excluding the pad 25b is covered with a protective layer 25c such as silicon oxide. It is mounted face up by a die attach film 25d.

  For example, a TiCu layer is formed in the vicinity of the edge of the mounting position of the first semiconductor chip 24 and the second semiconductor chip 25, which is used for mounting the first semiconductor chip 24 and the second semiconductor chip 25. This is the alignment mark M1.

For example, the first resin layer 26 made of polyimide resin, epoxy resin, acrylic resin, or the like is formed so as to cover the first semiconductor chip 24 and the second semiconductor chip 25.
In the first resin layer 26, openings 26a reaching the pads 24b of the first semiconductor chip 24 and the pads 25b of the second semiconductor chip 25 are formed.
A seed such as TiCu is formed on the first resin layer 26 so as to be integrated with the plug 24 b embedded in the opening 26 a and connected to the pad 24 b of the first semiconductor chip 24 and the pad 25 b of the second semiconductor chip 25. A first wiring composed of the layer 27 and the copper layer 28 is formed.

Further, for example, a second resin layer 29 made of polyimide resin, epoxy resin, acrylic resin, or the like is formed so as to cover the first wirings (27, 28) and the first resin layer 26.
In the second resin layer 29, an opening 29a reaching the first wiring is formed.
A second wiring made of a seed layer 30 such as TiCu and a copper layer 31 is formed on the second resin layer 29 so as to be embedded in the opening 29a and integrated with a plug portion connected to the first wiring. ing.

Further, conductive posts 32 made of copper or the like are formed so as to be connected to the second wiring (30, 31).
An insulating buffer layer 11 made of polyamideimide resin, polyimide resin, epoxy resin, phenol resin, polyparaphenylene benzobisoxazole resin, or the like is formed on the second resin layer 29 in the gap between the conductive posts 32. .
Further, bumps (projection electrodes) 33 are formed so as to protrude from the surface of the buffer layer 11 and connect to the conductive posts 32.

The SiP-type semiconductor device of the present embodiment is a semiconductor device packaged including a semiconductor, and includes an insulating layer including a first resin layer 26 and a second resin layer 29 stacked on the silicon substrate 20. A layer is formed, and a wiring layer including the first wiring (27, 28) and the second wiring (30, 31) is formed by being embedded in the insulating layer.
The first semiconductor chip 24 and the second semiconductor chip 25 are embedded in the insulating layer, and the first wiring (27, 28) and the second wiring (30, 31) are formed on these pad electrodes (24b, 25b). Are connected to the bumps 33 via the conductive posts 32. The wiring layer having the above configuration is a so-called rewiring layer for the first semiconductor chip 24 and the second semiconductor chip 25. It has become.

  Although not shown in the drawing, an electronic circuit including an active element may be formed on the silicon substrate 20 and a wiring layer may be connected.

Next, a method for manufacturing the semiconductor device of the present embodiment will be described with reference to FIGS. In this embodiment, all processes can be performed at the wafer level.
First, as shown in FIG. 2A, for example, a thermal oxidation method, a CVD (chemical vapor deposition) method or a sputtering method is formed on a silicon substrate 20 having a thickness of 725 μm and separated by a scribe line SL. A base insulating film 21 made of silicon oxide or the like is formed by, for example.

Next, for example, a TiCu layer (Ti is 300 nm, Cu is 300 nm) is formed on the entire surface of the upper layer of the base insulating film 21 by sputtering to form an alignment mark M1 for semiconductor chip mounting.
The alignment mark M1 is, for example, an L-shaped pattern at a location 50 μm away from the edge of the semiconductor chip mounting region (CP1, CP2), and is formed on one or two sides depending on the mounting direction.

Next, for example, in the first semiconductor chip mounting region, the pad 24b is formed on the circuit surface on which the active element of the semiconductor body portion 24a is formed in a separate process in advance, and the region excluding the pad 24b is silicon oxide or the like The first semiconductor chip 24 covered with the protective layer 24c is mounted with the die attach film 24d face up, that is, with the formation surface of the pad 24b facing the upper surface.
After the first semiconductor chip 24 is formed up to the protective film 24c, the back surface side is polished with a # 2000 wheel to a thickness of 50 μm.
Further, the die attach film 24d is laminated under the conditions of a speed of 10 mm / min, a pressure of 10 N / cm, and a temperature of 65 ° C. After the lamination, the die attach film is diced under the conditions of 4000 rpm and a feed speed of 10 mm / sec. The first semiconductor chip 24 is mounted by recognizing the alignment mark M1 and mounting the first semiconductor chip by thermocompression bonding under the conditions of, for example, a load of 3.2 N, a temperature of 160 ° C., and a time of 2 seconds in a face-up state.

On the other hand, for example, in the second semiconductor chip mounting region, the second semiconductor chip 25 is mounted in the same manner as the first semiconductor chip.
The first semiconductor chip 24 and the second semiconductor chip 25 may be the same or have different functions.

Next, for example, an insulating material such as a polyimide resin, a phenol resin, an epoxy resin, a silicone-modified polyimide resin, a BCB resin, or a PBO resin is supplied by a spin coating method or a printing method, and the first semiconductor chip 24 and the second semiconductor The first resin layer 26 covering the chip 25 is formed so as to have a film thickness of about 50 μm after curing.
In the case of a photosensitive polyimide resin, for example, the film is formed under the following conditions.
Spin coating: 1000 rpm (30 seconds) + 2000 rpm (40 seconds) + 1000 rpm (10 seconds) + 1500 rpm (10 seconds)
Pre-bake: 90 ° C (120 seconds) + 100 ° C (120 seconds)

Next, for example, the first resin layer 26 is polished from the upper surface by about 15 μm in order to flatten the step due to the presence or absence of the semiconductor chip.
Next, pattern exposure and development are performed at an exposure amount of 125 mJ / cm ² , and openings 26 a reaching the pads 24 b of the first semiconductor chip 24 and the pads 25 b of the second semiconductor chip 25 are formed in the first resin layer 26. The size of the opening 26a is, for example, about 50 μm in diameter. At this time, the resin in the scribe line SL is also removed.
After the development, post-curing treatment at 300 ° C. (60 minutes) is performed to cure the first insulating layer 26.

  Next, for example, a descum treatment is performed, a pretreatment etching of sputtering is performed, and further, the inside of the opening 26a of the first resin layer 26 is coated by sputtering to form a TiCu film (for example, 160 nm for Ti and 600 nm for Cu). The seed layer 27 is formed as a film.

  Next, for example, a resist film having a pattern for preventing plating from being formed outside the opening 16a and the first wiring formation region formed in the first resin layer 16 is formed, and the seed layer 27 is used as one electrode. Copper is plated by electrolytic plating, and a copper layer 28 is formed in the opening 26a formed in the first resin layer 26 and the formation region of the first wiring.

  Next, for example, the seed layer 27 is etched using the copper layer 28 as a mask to form a first wiring composed of the seed layer 27 and the copper layer 28.

Next, for example, a photosensitive insulating material such as polyimide resin is supplied by a spin coating method or the like to form the second resin layer 29. For example, it is formed to have a film thickness of 78 μm after curing.
In the case of a photosensitive polyimide resin, for example, the film is formed under the following conditions.
Spin coating: 7000 rpm (25 seconds) + 1000 rpm (125 seconds) + 1000 rpm (10 seconds) + 1500 rpm (10 seconds)
Pre-baking: 60 ° C (240 seconds) + 90 ° C (240 seconds) + 110 ° C (120 seconds)

Next, for example, pattern exposure and development are performed at an exposure amount of 300 mJ / cm ² , and an opening 29 a reaching the second wiring is formed in the second resin layer 29. The resin in the scribe line SL is also removed.
After the development, post-curing treatment at 300 ° C. (60 minutes) is performed to cure the second resin layer 29.

  Next, for example, a descum treatment is performed, a pretreatment etching for sputtering is performed, and the inside of the opening 29a of the second resin layer 29 is further coated by sputtering to form a TiCu film (for example, Ti is 160 nm and Cu is 600 nm). A seed layer 30 is formed by film formation.

Next, for example, a resist film is formed to prevent plating other than the opening 29a and the second wiring formation region formed in the second resin layer 29, and electrolytic plating using the seed layer 30 as one electrode. Processing is performed to form a copper layer 31.
Next, a resist film having openings for conductive posts is patterned, and an electrolytic plating process using the seed layer 30 as one electrode is performed to form conductive posts 32. The conductive post 32 has a diameter of 250 μm and a height of 80 μm, for example.

Next, the seed layer is etched by using the conductive post 32 and the copper layer 31 as a mask to form a second wiring composed of the seed layer 30 and the copper layer 31 and a conductive post formed thereon.
Further, the alignment mark M2 is formed by depositing a copper layer as a second wiring in a predetermined pattern also at the intersection of the scribe lines.
As described above, the configuration shown in FIG.

Next, as shown in FIG. 2B, for example, the frame portion 10a of the printing mask 10 protects the scribe line SL, and the frame portion 10a is in contact with the first resin layer 26. Using a squeegee SQ or the like, the resin 11a such as epoxy resin, polyimide resin, silicone resin, polyamideimide resin, polyimide resin, phenol resin or polyparaphenylene benzobisoxazole resin is supplied and printed, and the conductive post 32 The insulating buffer layer 11 is formed with a film thickness that completely covers the film.
The gap between the squeegee SQ and the printing mask 10 is, for example, 150 μm.

  Next, as shown in FIG. 2C, the printing of the buffer layer 11 is completed by removing the printing mask 10 from the scribe line SL.

Here, the step of forming the buffer layer will be described in more detail.
First, the printing mask 10 will be described.
FIG. 3A is a perspective view of a printing mask in which the resin paste is wiped by the printing mask wiping device according to the present embodiment, and FIG. 3B is a cross-sectional view.
The printing mask 10 is a printing mask for printing a resin insulating layer constituting a semiconductor device, and has a frame portion 10a serving as a mask.
Further, in the printing mask 10, a region surrounded by the frame portion 10a is a through opening 10b.

  For example, the printing mask of this embodiment is made of SUS having a thickness of 300 μm, and the frame portion has a width of about 200 μm. That is, the width a of the frame is about 200 μm, and the height b is about 300 μm.

Next, a process of forming a buffer layer using the printing mask will be described.
First, as shown in FIG. 4A, for example, the printing mask is arranged such that the frame portion 10a of the printing mask 10 protects the scribe line SL.
For example, the width W1 of the scribe line SL between the first resin layers 26 is about 96 μm, and the width W2 of the scribe line SL between the second resin layers 29 is about 196 μm. A frame portion 10 a having a width a of about 200 μm as shown in FIG. 3 is arranged so that a part thereof is in contact with the upper surface of the second resin layer 29.
Further, a resin paste is supplied and the resin is pushed into the opening of the printing mask using a squeegee to form the buffer layer 11.
Here, for example, the resin paste has an Nv value of 26, a viscosity of 110 Pa · s, a single resin supply rate of 15 g, a squeegee of 90 ° in J, a speed of 5 mm / sec, a printing pressure of 0 MPa, and a back pressure. Is about 0.07 MPa.
For example, the gap between the squeegee and the printing mask 10 is set to about 150 μm so as to obtain a film thickness necessary for the buffer layer, whereby the buffer is formed so that the surface is higher by about 150 μm than the upper end of the printing mask 10. Layer 11 is formed.
Here, since the surface of the frame portion 10a facing the substrate side is on the upper surface of the second resin layer 29, it is possible to prevent the resin from getting around the scribe line SL during printing.

Next, as shown in FIG. 4B, the printing of the buffer layer 11 is completed by removing the printing mask 10 from the scribe line SL.
At this time, a part of the resin paste 11r of the resin supplied as the buffer layer is formed on the surface opposite to the surface of the printing mask 10 that is directed to the printing material (wafer) during printing, and also on the printing mask 10. The frame portion 10a remains around the surface directed to the substrate side (wafer) from the side surface of the frame portion 10a.
The resin paste remaining on the printing mask as described above is removed as follows.

FIG. 5 is a schematic configuration diagram of a printing mask wiping device according to the present embodiment.
For example, it includes a printing mask holding unit (not shown), a scraper SC, a wiping unit H, and the like.
The printing mask holding unit holds one side of the printing mask 10 facing the printed material side (wafer) at the time of printing facing downward. That is, it is held in a posture as used during printing.

The scraper SC scrapes off the resin paste remaining on the other surface of the printing mask, that is, on the surface opposite to the surface directed to the printed material (wafer) during printing, from the printing mask.
Here, for example, the gap between the scraper SC and the printing mask 10 is zero, and the printing pressure is 0 MPa.

  Further, the wiping portion H is pressed so as to come into contact with a predetermined region R from one surface side of the printing mask, that is, the surface side directed to the printed material side (wafer) at the time of printing. The resin paste is wiped from one side of the printing mask by sliding on the top.

Here, the scraper SC and the wiping portion H are configured to move in synchronization so that the scraping position of the resin paste of the scraper SC is within a predetermined region R.
For example, the position of the shaft of the member that holds the scraper SC is controlled such that the wiping portion H is within the range of a predetermined region R in contact with the printing mask.

  In the printing mask wiping apparatus according to the above-described embodiment, the wiping portion H has, for example, a roundness on one surface side of the printing mask, that is, the surface side directed to the printed material side (wafer) at the time of printing. It has the structure which has the base 12 of the shape which protruded, and the nonwoven fabric 13 attached so that the slide on the base 12 was possible.

Further, the nonwoven fabric 13 is, for example, a roll that is drawn from the nonwoven fabric roll 13a before use, guided by the control rolls 14a, 14b, 14c, and the like, drawn around the base 12 and wound around the roll 13b after use. Shaped nonwoven fabric.
By continuously pulling out from the roll and sliding on the base, the non-woven fabric before use is always supplied in the region R pressed against the printing mask, and the resin paste is sufficiently wiped off. The non-woven fabric can be wiped off satisfactorily because it has almost no fuzz.

FIGS. 6A and 6B are schematic views illustrating a wiping method using the printing mask wiping device according to the present embodiment.
First, one surface of the printing mask 10 that is used as described above by the holding portion (not shown) and the resin paste 11r remains is directed to the printed material side (wafer) at the time of printing. Hold with face down.

Next, as shown in FIG. 6 (a), the scraper SC scrapes off the resin paste 11r remaining on the other surface of the printing mask, and in a predetermined region R from one surface side of the printing mask. The wiping portion H is pressed so as to come into contact, and is slid on one surface to wipe one resin paste 11r of the printing mask.
If the viscosity of the resin paste is not excessively high, it may easily move to the wiping portion H side due to the action of gravity, and the non-woven fabric constituting the wiping portion H absorbs the resin paste due to capillary action, etc. In the region R where the portion H is pressed, the remaining resin paste can be wiped sufficiently clean.

Here, the scraper SC scrapes the resin paste 11r from the printing mask 10 so as to operate from the state shown in FIG. 6A to the state shown in FIG. When the resin paste is wiped off from the surface side, the scraper C and the wiping portion are moved synchronously so that the scrape SC scraping position of the resin paste is within a predetermined region R. When the scraped resin paste is wiped off by the wiping portion H, a flow of the resin paste is generated and quickly absorbed by the non-woven fabric, and thus the residual amount of resin can be significantly reduced. .
That is, for example, the scraper SC and the wiping portion H are moved by controlling the position of the shaft of the member holding the scraper SC so that the wiping portion H is within a predetermined region R in contact with the printing mask.

For example, as the wiping portion H, a wiping portion having a base 12 with a round shape protruding on one surface side and a nonwoven fabric 13 slidably attached on the base is used.
Moreover, as the nonwoven fabric 13, the roll-shaped nonwoven fabric drawn out from the roll 13a of the nonwoven fabric before use, drawn around the base 12, and wound up by the roll 13b after use is used.

  After the buffer layer is formed as described above, as shown in FIG. 7A, for example, after the buffer layer 11 is cured with the resin, the conductive post 32 is cued by grinding. The conditions at this time are set to 3500 rpm and 0.5 mm / second using, for example, a # 600 wheel.

  Next, as shown in FIG. 7B, bumps (projection electrodes) 33 are formed by, for example, mounting solder balls or printing solder paste so as to be connected to the conductive posts 32, for example.

Next, as shown in FIG. 7C, for example, the silicon substrate 20 is thinned to a desired thickness by BGR from the back side of the silicon substrate 20, and the silicon substrate 20 is diced by the blade B to be thinly divided into individual pieces.
In particular, in the dicing process, the substrate can be positioned by referring to the alignment mark M2 on the scribe line. For example, the position of the scribe line is automatically recognized and dicing is automatically performed. This makes it possible to reduce the manufacturing cost.
Thus, a SiP-type semiconductor device having the configuration shown in FIG. 1 can be formed.

  By the above-described printing mask wiping device and wiping method of the present embodiment, the resin paste remaining on the printing mask during printing of the resin layer such as the buffer layer is scraped off from the other surface side of the printing mask and synchronized. Thus, the resin paste remaining on the printing mask can be easily removed.

As described above, the printing mask can be wiped clean and can be embedded by one-time resin printing, thereby improving productivity.
Further, since there is no wraparound of the resin with respect to the contact surface of the frame portion with the printing material, for example, after supplying 15 g of resin paste, continuous printing is possible with a very small amount of addition.
The wrapping of the resin into the scribe line is reduced and the dicing property is improved because the resin does not remain on the scribe line.
Further, by selecting the opening of the printing mask, it is possible to prevent printing on the outer peripheral portion of the wafer, which contributes to reduction of warpage after printing the buffer layer.
If there is residual resin, the printing mask frame will gradually become thicker and the scribe line will spread, but there will be less resin paste remaining on the printing mask and a cleaner printing mask will be used. As a result, the resin insulating layer can be printed as designed, and wiring exposure at the outer periphery of the chip can be prevented.

FIG. 8 is a schematic diagram showing a modification of the present embodiment.
For example, for two squeegees arranged opposite to each other, as shown in FIG. 8, one can be used as the scraper SC according to the present embodiment, and the other can be used as the original squeegee SQ.
For example, printing is performed by moving from the right to the left on the drawing using the squeegee SQ, and then the printing mask released from the substrate is left from the left on the drawing using the scraper SC. The resin paste is scraped off.

For example, it is possible to tilt the scraper SC and use it, and it is possible to select a posture with high efficiency for scraping.
In such a case, the center of the wiping portion is also shifted by an appropriate distance so that the wiping portion is arranged at a position where the scraped resin is easily absorbed.

The present invention is not limited to the above description.
For example, passive elements such as inductances and capacitors may be formed on the first and second wirings as SiP.
In the embodiment, two layers of wiring (first wiring and second wiring) are formed as the wiring in the insulating layer, but the present invention is not limited to this. The number of resin insulation layers is not limited to the number of layers as described above.
In addition, various modifications can be made without departing from the scope of the present invention.

  The wiping device for a printing mask of the present invention can be applied to a device for wiping off a resin paste remaining on a printing mask used when printing a resin insulating layer of a semiconductor device, such as a system-in-package form.

  The printing mask wiping method of the present invention can be applied to a method of wiping off a resin paste remaining on a printing mask used when printing a resin insulating layer of a semiconductor device, such as a system in package form.

FIG. 1 is a cross-sectional view of a SiP-type semiconductor device according to an embodiment of the present invention. 2A to 2C are cross-sectional views illustrating manufacturing steps of a method for manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 3A is a perspective view of a printing mask in which the resin paste is wiped off by the printing mask wiping device according to the embodiment of the present invention, and FIG. 3B is a cross-sectional view. FIG. 4A and FIG. 4B are cross-sectional views showing a process of forming a buffer layer according to the embodiment of the present invention. FIG. 5 is a schematic configuration diagram of a printing mask wiping device according to an embodiment of the present invention. FIGS. 6A and 6B are schematic views illustrating a wiping method using the printing mask wiping device according to the present embodiment. 7A to 7C are cross-sectional views illustrating manufacturing steps of the method for manufacturing a semiconductor device according to the embodiment of the present invention. FIG. 8 is a schematic view of a modification of the embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Mask for printing, 10a ... Frame part, 10b ... Through-opening part, 11 ... Buffer layer, 11r ... Residual paste, 12 ... Base, 13 ... Nonwoven fabric, 13a, 13b ... Nonwoven fabric roll, 14a, 14b, 14c ... Control Roller, 20 ... silicon substrate, 21 ... underlying insulating film, 24 ... first semiconductor chip, 24a ... semiconductor body portion, 24b ... pad, 24c ... protective layer, 24d ... die attach film, 25 ... second semiconductor chip, 25a ... Semiconductor body portion, 25b ... pad, 25c ... protective layer, 25d ... die attach film, 26 ... first resin layer, 26a ... opening, 27 ... seed layer, 28 ... copper layer, 29 ... second resin layer, 29a ... Opening, 30 ... Seed layer, 31 ... Copper layer, 32 ... Conductive post, 33 ... Bump, B ... Blade, M1, M2 ... Alignment mark, SC ... Scraper SQ ... squeegee

Claims (6)

A printing mask wiping device for wiping off a resin paste remaining on a printing mask for printing a resin layer on a substrate,
A holding unit for holding the printing mask with one side of the printing mask facing down on the substrate side during printing facing down;
A scraper that scrapes off the resin paste remaining on the other surface of the printing mask from the printing mask;
Pressed so as to come into contact with a predetermined region from the one surface side of the printing mask, slides on the one surface, and wipes the resin paste from the one surface side of the printing mask. A wiping section and
The scraper and the wiping part move synchronously so that the scraping position of the resin paste on the scraper falls within the predetermined region. The wiping portion is
A base having a round shape protruding on the one surface side;
The wiping device for a printing mask according to claim 1, further comprising: a nonwoven fabric slidably mounted on the base. The wiping device for a printing mask according to claim 1, wherein the nonwoven fabric is a roll-shaped nonwoven fabric that is drawn from a roll before use, drawn around the base, and wound around the roll after use. A printing mask wiping method for wiping off a resin paste remaining on a printing mask for printing a resin layer on a substrate,
Holding the printing mask with one side of the printing mask facing down on the substrate side during printing facing down;
Scraping off the resin paste remaining on the other surface of the printing mask with a scraper, and pressing the wiping portion so as to come into contact with a predetermined region from the one surface side of the printing mask; And wiping the resin paste from the one surface side of the printing mask,
In the step of scraping off the resin paste from the printing mask by the scraper and wiping the resin paste from the one surface side of the printing mask, the scraping position of the resin paste of the scraper is the predetermined position. The scraper and the wiping portion are moved synchronously so as to be in the region. As the wiping portion,
A base having a round shape protruding on the one surface side;
The wiping method for a printing mask according to claim 4, wherein a wiping portion having a non-woven fabric slidably mounted on the base is used. The wiping method for a printing mask according to claim 4, wherein the nonwoven fabric is a roll-shaped nonwoven fabric that is drawn from a roll before use, drawn around the base, and wound on a roll after use.

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