JP2008057012A5 - - Google Patents
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- JP2008057012A5 JP2008057012A5 JP2006236960A JP2006236960A JP2008057012A5 JP 2008057012 A5 JP2008057012 A5 JP 2008057012A5 JP 2006236960 A JP2006236960 A JP 2006236960A JP 2006236960 A JP2006236960 A JP 2006236960A JP 2008057012 A5 JP2008057012 A5 JP 2008057012A5
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- JP
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- Prior art keywords
- plasma
- workpiece
- gas
- processing apparatus
- flame
- Prior art date
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- 239000007789 gas Substances 0.000 claims description 39
- 210000002381 Plasma Anatomy 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 9
- 238000002485 combustion reaction Methods 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 239000000376 reactant Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002349 favourable Effects 0.000 description 1
Description
このような目的は、下記の本発明により達成される。
本発明のプラズマ処理装置は、ワークに向けてプラズマを供給するプラズマ供給手段を有し、
前記ワークに前記プラズマを接触させることにより反応物を生成し、前記反応物を前記ワークから脱離させることにより、前記ワークにエッチング加工を施すプラズマ処理装置であって、
前記プラズマ供給手段は、前記ワークが位置する空間から隔離された燃焼室を備えており、該燃焼室内において、火炎中に処理ガスを導入することにより、前記処理ガスをプラズマ化して前記プラズマを発生させ、該発生したプラズマを前記ワークに向けて放射するよう構成されており、
前記火炎は、前記処理ガスと水素ガスを主成分とする可燃性ガスとを混合して混合ガスを生成した後、前記混合ガスと酸素ガスを主成分とする助燃性ガスとを合流させ、この合流の位置で、これらのガスを燃焼させて発生させたものであることを特徴とする。
これにより、前記ワークに対して効率よくエッチング加工を行うことができ、かつ小型で安価なプラズマ処理装置が得られる。
また、ワークが位置する空間から隔離された燃焼室を備えているため、高温の火炎が前記ワークに直接接触せず、火炎によってワークが変質・劣化するのを確実に防止するという効果が得られる。これにより、より耐熱性が低いため、火炎に直接曝すことができない材料で構成されたワークに対しても、エッチング加工を施すことができる。
また、火炎として可燃性ガスと助燃性ガスとの混合ガスを燃焼させて発生させたものを用いたため、可燃性ガスを効率よく燃焼させることができ、より高いエネルギーの火炎を発生させることができる。
また、可燃性ガスと処理ガスとをあらかじめ混合した後、得られた混合ガスに助燃性ガスを合流させ、この合流の位置において燃焼させるようにしたため、燃焼前に可燃性ガスと処理ガスとが互いに十分に拡散し合う。このため、可燃性ガスが燃焼した際に発生するエネルギーを、効率よく処理ガスに付与することができる。その結果、処理ガス中のガス分子を確実に熱分解させることができる。また、可燃性ガスと助燃性ガスとが合流する位置で燃焼させているので、火炎が可燃性ガスの供給方向に向かって逆流してしまうのを確実に防止することができる。
また、水素ガスは、燃焼する際に、前記ワークにとって汚染原因となり得る炭素を発生させない。このため、ワークを清浄な状態に維持しつつ、良好なプラズマ処理が可能となる。
また、水素ガスと酸素ガスとが反応すると水が発生するが、水は、前記ワークに付着しても変質・劣化等を招き難く、さらに、環境に対する負荷がないという利点を有する。
Such an object is achieved by the present invention described below.
The plasma processing apparatus of the present invention has plasma supply means for supplying plasma toward the workpiece,
A plasma processing apparatus that generates a reactant by bringing the plasma into contact with the workpiece, and etches the workpiece by detaching the reactant from the workpiece,
The plasma supply means includes a combustion chamber isolated from a space where the workpiece is located , and the processing gas is introduced into a flame in the combustion chamber to generate the plasma by converting the processing gas into plasma. And is configured to radiate the generated plasma toward the workpiece,
The flame mixes the processing gas and a combustible gas containing hydrogen gas as a main component to generate a mixed gas, and then combines the mixed gas and an auxiliary gas containing oxygen gas as a main component. These gases are produced by burning these gases at the position of merging .
As a result, an etching process can be efficiently performed on the workpiece, and a small and inexpensive plasma processing apparatus can be obtained.
In addition, since the combustion chamber is provided isolated from the space where the workpiece is located, the high-temperature flame does not directly contact the workpiece, and the effect of reliably preventing the workpiece from being altered or deteriorated by the flame can be obtained. . Thereby, since the heat resistance is lower, it is possible to perform the etching process even on a workpiece made of a material that cannot be directly exposed to the flame.
In addition, since the flame is generated by burning a mixed gas of combustible gas and auxiliary combustible gas, the combustible gas can be burned efficiently, and a higher energy flame can be generated. .
In addition, after the combustible gas and the processing gas are mixed in advance, the auxiliary gas is joined to the obtained mixed gas and burned at the position of the joining, so that the combustible gas and the processing gas are Fully diffuse each other. For this reason, the energy generated when the combustible gas burns can be efficiently imparted to the processing gas. As a result, gas molecules in the processing gas can be reliably pyrolyzed. Moreover, since it is made to burn in the position where combustible gas and auxiliary combustible gas merge, it can prevent reliably that a flame flows backward toward the supply direction of combustible gas.
Further, the hydrogen gas does not generate carbon that can cause contamination of the workpiece when it is burned. For this reason, a favorable plasma process is attained, maintaining a workpiece | work in a clean state.
Further, when hydrogen gas and oxygen gas react with each other, water is generated. However, even if the water adheres to the workpiece, it is difficult to cause alteration or deterioration, and further, there is an advantage that there is no burden on the environment.
本発明のプラズマ処理装置では、前記火炎は、火炎放射器から放射されており、
該火炎放射器と前記ワークとの距離を設定することにより、前記エッチング加工の加工量を調整することが好ましい。
これにより、前記エッチング加工の加工量を容易に調整することができる。また、前記火炎を発生させるガスや前記処理ガスの流量を変更する場合、流量の変更が前記火炎の熱量の変化、すなわち前記エッチング加工の加工量に反映されるのに一定のタイムラグが伴うため、その間、加工を中断する必要があるが、前記火炎放射器と前記ワークとの距離を設定する方法によれば、より少ないタイムラグで前記加工量の調整を行うことができる。
In the plasma processing apparatus of the present invention, the flame is emitted from a flame radiator,
It is preferable to adjust the processing amount of the etching process by setting the distance between the flame radiator and the workpiece.
Thereby, the processing amount of the said etching process can be adjusted easily. In addition, when changing the flow rate of the gas that generates the flame or the processing gas, since a change in the flow rate is reflected in the change in the amount of heat of the flame, that is, the processing amount of the etching process, a certain time lag is involved, In the meantime, the machining needs to be interrupted, but according to the method of setting the distance between the flame radiator and the workpiece, the machining amount can be adjusted with a smaller time lag.
本発明のプラズマ処理装置では、前記ワークは、ガラス材料で構成されていることが好ましい。
前記ワークには、火炎が直接接触しないので、比較的耐熱性が低い前記ワークに対して前記エッチング加工を施す際に、その効果が特に発揮される。
In the plasma processing apparatus of this invention, it is preferable that the said workpiece | work is comprised with the glass material.
Since the flame is not in direct contact with the workpiece, the effect is particularly exerted when the etching process is performed on the workpiece having relatively low heat resistance .
本発明のプラズマ処理方法は、本発明のプラズマ処理装置を用いて、前記ワークにエッチング加工を施すことを特徴とする。
これにより、前記ワークに対して効率よく前記エッチング加工を行うことができる。
The plasma processing method of the present invention is characterized in that the workpiece is etched using the plasma processing apparatus of the present invention .
Thereby, the said etching process can be efficiently performed with respect to the said workpiece | work.
Claims (7)
前記ワークに前記プラズマを接触させることにより反応物を生成し、前記反応物を前記ワークから脱離させることにより、前記ワークにエッチング加工を施すプラズマ処理装置であって、
前記プラズマ供給手段は、前記ワークが位置する空間から隔離された燃焼室を備えており、該燃焼室内において、火炎中に処理ガスを導入することにより、前記処理ガスをプラズマ化して前記プラズマを発生させ、該発生したプラズマを前記ワークに向けて放射するよう構成されており、
前記火炎は、前記処理ガスと水素ガスを主成分とする可燃性ガスとを混合して混合ガスを生成した後、前記混合ガスと酸素ガスを主成分とする助燃性ガスとを合流させ、この合流の位置で、これらのガスを燃焼させて発生させたものであることを特徴とするプラズマ処理装置。 Having plasma supply means for supplying plasma toward the workpiece;
A plasma processing apparatus that generates a reactant by bringing the plasma into contact with the workpiece, and etches the workpiece by detaching the reactant from the workpiece,
The plasma supply means includes a combustion chamber isolated from a space where the workpiece is located , and the processing gas is introduced into a flame in the combustion chamber to generate the plasma by converting the processing gas into plasma. And is configured to radiate the generated plasma toward the workpiece,
The flame mixes the processing gas and a combustible gas containing hydrogen gas as a main component to generate a mixed gas, and then combines the mixed gas and an auxiliary gas containing oxygen gas as a main component. A plasma processing apparatus generated by burning these gases at the position of merging .
該火炎放射器と前記ワークとの距離を設定することにより、前記エッチング加工の加工量を調整する請求項１に記載のプラズマ処理装置。 The flame is emitted from a flamethrower,
By setting the flame radiator a distance between the workpiece, the plasma processing apparatus according to claim 1 for adjusting the processing amount of the etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006236960A JP4893169B2 (en) | 2006-08-31 | 2006-08-31 | Plasma processing apparatus and plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006236960A JP4893169B2 (en) | 2006-08-31 | 2006-08-31 | Plasma processing apparatus and plasma processing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008057012A JP2008057012A (en) | 2008-03-13 |
| JP2008057012A5 true JP2008057012A5 (en) | 2009-10-15 |
| JP4893169B2 JP4893169B2 (en) | 2012-03-07 |
Family
ID=39240108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006236960A Expired - Fee Related JP4893169B2 (en) | 2006-08-31 | 2006-08-31 | Plasma processing apparatus and plasma processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4893169B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7510664B2 (en) * | 2001-01-30 | 2009-03-31 | Rapt Industries, Inc. | Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces |
| US7371992B2 (en) * | 2003-03-07 | 2008-05-13 | Rapt Industries, Inc. | Method for non-contact cleaning of a surface |
-
2006
- 2006-08-31 JP JP2006236960A patent/JP4893169B2/en not_active Expired - Fee Related
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