JP2008048275A - Piezoelectric vibrating piece and piezoelectric device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a piezoelectric vibrating piece having excellent temperature characteristics for miniaturization, and a piezoelectric device. <P>SOLUTION: The present invention relates to a piezoelectric vibrating piece comprising a base 51 formed from a piezoelectric material and a plurality of vibrating arms 35 and 36 extending from one end of the base, wherein the vibrating arms are formed with exciting electrodes 37 and 38 as driving electrodes to each of which a driving voltage is applied, each of the exciting electrodes includes a chromium layer as a base layer and a gold layer as an electrode layer, film thickness of the chromium layer is 300Å or less, and film thickness of the gold layer is 500Å or less. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an improvement of a piezoelectric vibrating piece and a piezoelectric device in which the piezoelectric vibrating piece is accommodated in a package or a case.

Piezoelectric vibrators and piezoelectrics in small information devices such as HDDs (hard disk drives), mobile computers, IC cards, mobile communication devices such as mobile phones, car phones, and paging systems, and piezoelectric gyro sensors Piezoelectric devices such as oscillators are widely used.
FIG. 12 is a schematic plan view showing an example of a piezoelectric vibrating piece conventionally used in a piezoelectric device.

In the figure, a piezoelectric vibrating reed 1 is formed by etching a piezoelectric material such as quartz to form the outer shape shown in the figure. A rectangular base 2 attached to a package (not shown) or the like, A pair of vibrating arms 3 and 4 extending upward is provided, and long grooves 3a and 4a are formed on the main surfaces (front and back surfaces) of these vibrating arms, and necessary driving electrodes are formed ( Patent Document 1).
In such a piezoelectric vibrating piece 1, when a driving voltage is applied via a driving electrode, the piezoelectric vibrating piece 1 is flexibly oscillated so that the distal ends of the vibrating arms 3 and 4 approach and separate from each other. The signal of the frequency of is extracted.

By the way, such a piezoelectric vibrating piece 1 has a lead electrode formed at a location indicated by reference numerals 5 and 6 of the base portion 2, and adhesives 7 and 8 are applied to this portion and fixed and supported on a substrate such as a package. The
And, after the fixing support by this adhesive, the residual stress remaining due to the difference in the linear expansion coefficient between the material constituting the piezoelectric vibrating piece and the material such as the package does not hinder the bending vibration of the vibrating arm, The notches 9, 9 are formed in the base 2.
In the piezoelectric vibrating reed 1 as described above, as a result of progress in miniaturization, the arm width W1 of the vibrating arms 3 and 4 is about 100 μm, the distance between the vibrating arms 3 and 4 is about 100 μm, and the width BW1 of the base 2 Is about 500 μm. And the size reduction of these parts is advanced, and the length BL1 of the base part is also made a small size corresponding to this, and size reduction of the piezoelectric vibrating reed 1 is advanced.

JP 2002-261575 A

  However, when such a piezoelectric vibrating reed 1 is further downsized, when a temperature characteristic test is performed, the frequency may vary in a low temperature region as indicated by reference numeral P in FIG. That is, a temperature characteristic curve that is a curve indicating the frequency-temperature characteristic may be distorted to cause frequency distortion at a low temperature.

Such frequency distortion at a low temperature is considered to be mainly caused by two causes.
One is an influence caused by the arm width W1 of the vibrating arm being further reduced to be 40 μm to 60 μm.
Second, when a driving electrode (not shown) formed on each vibrating arm is formed by depositing gold on a chromium underlayer, the underlying chromium layer is particularly shown in FIG. It is considered that the film stress generated by the Young's modulus that increases at such a low temperature and the difference in coefficient of linear expansion from the piezoelectric material of the resonator element affects the resonator element and causes frequency distortion at low temperatures. In addition, this film stress hinders bending vibration and causes an increase in CI (crystal impedance) value.

If the thickness of the chromium layer is too small, the effect of sufficiently bonding gold cannot be expected. However, if the thickness of the chromium layer is too large, the influence of the stress described above is strongly generated.
On the other hand, if the thickness of the gold layer formed on the chromium layer is too thick, it causes frequency distortion at a low temperature, although not as much as the chromium layer. On the other hand, if the film thickness of the gold layer is too thin, chromium diffuses and oxidizes on the surface of the gold layer due to the influence of heat in the subsequent process, thereby increasing the conduction resistance.
It is difficult to determine the film thickness of the electrode film that can solve such various problems.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a piezoelectric vibrating piece having excellent temperature characteristics and a piezoelectric device in order to reduce the size.

  According to the first aspect of the present invention, the first aspect includes a base portion formed of a piezoelectric material and a plurality of vibrating arms extending from one end side of the base portion, and a driving voltage is applied to the vibrating arms. An excitation electrode as a drive electrode is formed, and the excitation electrode includes a chromium layer as a base layer and a gold layer as an electrode layer, and the thickness of the chromium layer is 300 mm or less, This is achieved by a piezoelectric vibrating piece having a layer thickness of 500 mm or less.

According to the configuration of the first aspect of the present invention, the excitation electrode is formed on the resonating arm extending from the base, and when the drive voltage is applied, the ends of the resonating arms are bent so as to approach and separate from each other. Vibrate.
In order to cause such bending vibration, an excitation electrode for transmitting a driving voltage to the vibrating arm and forming an appropriate electric field therein is composed of a chromium layer as an underlayer and a gold layer as an electrode layer formed on the surface thereof. In this electrode film, the chromium layer has a film thickness of 300 mm or less, and the gold layer has a film thickness of 500 mm or less.
Here, the film stress of the electrode part at low temperature does not become too large because the chromium layer is 300 mm or less. Moreover, since the film thickness of the gold layer is set to 500 mm or less, the film stress of the electrode portion is not excessively increased and does not cause frequency distortion at a low temperature. As a result, even if the resonator element is formed in a small size, the CI value that hinders bending vibration at low temperatures is suppressed, frequency distortion at low temperatures is prevented, sufficient conduction performance is exhibited, and temperature characteristics are good. A piezoelectric vibrating piece can be provided.

According to a second invention, in the configuration of the first invention, the base portion has a predetermined length, and is integrally joined to the base portion via a connecting portion, from the one end side of the base portion. A support arm that extends in the width direction on the other end side separated by a predetermined distance and extends in the same direction as the vibrating arm is provided outside the vibrating arm.
According to the configuration of the second invention, the vibrating arm that bends and vibrates extends from one end of the base, and the support arm extends from the other end of the base having a predetermined length.
For this reason, when the support arm is bonded to the base of the package or the like by bonding or the like, the stress change generated at the bonded portion due to a change in ambient temperature or a drop impact is caused by the change in the support arm. There is almost no influence on the vibrating arm at a distance from the joint location to the other end of the base, and further at a distance of a predetermined length of the base, and therefore the temperature characteristics are particularly good.
In addition, vibration leakage from a vibrating arm that bends and vibrates on the contrary is hardly reached because the base portion is separated by a predetermined length before reaching the supporting arm that is separated from the base portion. That is, if the base length is extremely short, the leaked component of the bending vibration spreads over the entire support arm, making it difficult to control. However, in the present invention, there is no such fear.
And since such an action can be obtained, the supporting arm is extended in the width direction from the other end of the base portion, and is configured to extend in the same direction as the vibrating arm outside the vibrating arm. The size of can be made compact.

A third invention is characterized in that, in the configuration of either the first or second invention, when the film thickness of the chromium layer is 200 mm or less, the film thickness of the gold layer is 400 mm or less. To do.
According to the third invention, when the film thickness of the chromium layer is suppressed to 200 mm or less, the film thickness of the gold layer is set to 400 mm or less to make the film thickness sufficient, and even if the conduction performance is improved, frequency distortion at low temperature is prevented. Can do.

A fourth invention is characterized in that, in the configuration of the first or second invention, when the film thickness of the chromium layer is 100 mm or less, the film thickness of the gold layer is 500 mm or less. And
According to the fourth invention, when the film thickness of the chromium layer is suppressed to 100 mm or less, the film thickness of the gold layer is set to 500 mm or less to make the film thickness sufficient, and even when the conduction performance is improved, frequency distortion at low temperature is prevented. be able to.

  According to a fifth aspect of the present invention, there is provided a piezoelectric device in which a piezoelectric vibrating piece is accommodated in a package or a case, wherein the piezoelectric vibrating piece includes a base portion having a predetermined length formed of a piezoelectric material. A plurality of resonating arms extending from one end side of the base portion, and integrally joined to the base portion via a connecting portion, and in the width direction on the other end side separated from the one end side of the base portion by a predetermined distance. A support arm extended outside the vibrating arm and extending in the same direction as the vibrating arm, and the vibrating arm is formed with an excitation electrode as a driving electrode to which a driving voltage is applied, The excitation electrode includes a chromium layer as a base layer and a gold layer as an electrode layer, the chromium layer has a thickness of 100 to 300 mm, and the gold layer has a thickness of 200 to 500 mm. Piezoelectric By the vice, it is achieved.

According to the configuration of the fifth invention, in the piezoelectric vibrating piece housed in the package, the vibrating arm is formed with an excitation electrode as a driving electrode to which a driving voltage is applied, and the excitation electrode is an underlayer. And a gold layer as an electrode layer. The thickness of the chromium layer is 100 to 300 mm, and the thickness of the gold layer is 200 to 500 mm.
For this reason, the same effect as that of the first invention can be obtained, and in particular, the film stress of the electrode portion at a low temperature does not become excessively large by setting the chromium layer to 300 mm or less. In addition, since the thickness of the gold layer is 500 mm or less, an increase in electrode formation cost can be suppressed. As a result, even if the whole is formed in a small size, the CI value that hinders bending vibration at low temperatures is suppressed, frequency distortion at low temperatures is prevented, sufficient conduction performance is exhibited, and piezoelectric properties with good temperature characteristics A device can be provided.

1 and 2 show an embodiment of the piezoelectric device of the present invention. FIG. 1 is a schematic plan view thereof, and FIG. 2 is an end view taken along line AA of FIG. 3 is an enlarged plan view for explaining details of the piezoelectric vibrating piece 32 in FIG. 1, and FIG. 4 is an end view taken along the line BB of the vibrating arm portion in FIG.
In these drawings, the piezoelectric device 30 shows an example in which a piezoelectric vibrator is configured. The piezoelectric device 30 houses a piezoelectric vibrating piece 32 in a package 57 as a base.
As shown in FIGS. 1 and 2, the package 57 is formed in a rectangular box shape, for example, and includes three substrates: a first substrate 54, a second substrate 55, and a third substrate 56. For example, an aluminum oxide ceramic green sheet is formed as an insulating material into an illustrated shape and then sintered.

The package 57 is hermetically sealed by housing the piezoelectric vibrating piece 32 and then bonding the transparent glass lid 40 using the sealing material 58. Thereby, after sealing the lid 40, the frequency can be adjusted by trimming the electrodes of the piezoelectric vibrating piece 32 by irradiating laser light from the outside.
When the frequency adjustment after the lid sealing is not performed, a metal lid can be used as the lid 40. For example, by using a Kovar lid or the like, as described later, seam welding is performed. The lid can be sealed.

The bottom of the package 57 has a through hole 27 for degassing in the manufacturing process. The through hole 27 is formed in the first hole 25 formed in the first substrate 54 and the second substrate 55, has an outer diameter smaller than that of the first hole 25, and the first hole 25. The second hole 26 communicates with the second hole 26.
The through hole 27 is sealed with a sealing material 28 so that the inside of the package 57 is airtight.
As shown in FIG. 2, the package 57 forms a space of the internal space S by removing the material inside the third substrate 56. This internal space S is a housing space for housing the piezoelectric vibrating piece 32.
On each electrode part 31-1, 31-2, 31-1, 31-2 formed on the second substrate 55 of the package 57, a conductive adhesive 43, 43, 43, 43 is used to be described later. The later-described extraction electrode forming portions of the supporting arms 61 and 62 of the piezoelectric vibrating piece 32 are placed and bonded.
For this reason, the bonding strength for bonding the piezoelectric vibrating piece 32 is superior to that of the piezoelectric device 30 of FIG.

The piezoelectric vibrating piece 32 is formed of, for example, quartz, and a piezoelectric material such as lithium tantalate or lithium niobate can be used in addition to quartz. As shown in FIG. 1, the piezoelectric vibrating piece 32 includes a base 51 and a pair of vibrating arms 35 and 36 that extend in parallel from the one end (right end in the drawing) to the right. It has.
Long grooves 33 and 34 extending in the length direction are preferably formed on the front and back surfaces of the main surfaces of the vibrating arms 35 and 36, respectively. As shown in FIGS. 1 and 2, driving electrodes are formed in the long grooves. Excitation electrodes 37 and 38 are provided.
In this embodiment, the tip portions of the resonating arms 35 and 36 are gradually widened in a slightly tapered shape so that the weight is increased to play the role of a weight. Thereby, the bending vibration of the vibrating arm is easily performed.

In addition, the piezoelectric vibrating reed 32 has a base 51 at the other end (the left end in the drawing) separated from the one end where the vibrating arm of the base 51 is formed by a predetermined distance BL (base length L2 + cut-in length) in FIG. And extending in parallel with these vibrating arms 35 and 36 in the extending direction of each vibrating arm 35 and 36 (rightward in FIG. 1) at positions on both outer sides of the vibrating arms 35 and 36. Supporting arms 61 and 62 are provided.
The tuning fork-shaped outer shape of the piezoelectric vibrating piece 32 and the long groove provided in each vibrating arm should be precisely formed by wet etching a material such as a quartz wafer with a hydrofluoric acid solution or dry etching, for example. Can do.

The excitation electrodes 37 and 38 are formed in the long grooves 33 and 34 and on the side surfaces of the vibrating arms, and the electrodes in the long grooves and the electrodes provided on the side surfaces of each vibrating arm are paired. The excitation electrodes 37 and 38 are routed around the supporting arms 61 and 62 as extraction electrodes 37a and 38a, respectively. As a result, when the piezoelectric device 30 is mounted on a mounting substrate or the like, an external driving voltage is applied from the mounting terminal 41 to each support arm 61 of the piezoelectric vibrating piece 32 via the electrode portions 31-1 and 31-2. , 62 are transmitted to the extraction electrodes 37a, 38a, and are transmitted to the respective excitation electrodes 37, 38.
Then, by applying a driving voltage to the excitation electrodes in the long grooves 33 and 34, the electric field efficiency inside the region where the long grooves of the respective vibrating arms are formed can be increased during driving.

Here, the excitation electrodes 37 and 38 are formed by forming an electrode layer with a metal having excellent conductivity on the base metal layer.
In this embodiment, a chromium (Cr) layer is formed as a base metal layer, and a gold (Au) layer is formed as an electrode layer, and the method shown in FIG. The electrode is formed in such a shape.
In this case, each film formation of the base layer and the electrode layer (not shown) is performed by sputtering or vapor deposition. In the badge process for forming a large number of piezoelectric vibrating pieces from a quartz wafer or the like, the film is formed by vapor deposition. Is preferred.

Also, as shown in FIG. 3, preferably, the base 51 is partially reduced in width in the width direction of the base 51 at both side edges at a position sufficiently away from the end of the base 51 on the vibrating arm side. The recessed part or the notch | incision part 71,72 formed in this way is provided.
Thereby, when the vibrating arms 35 and 36 are bent and vibrated, it is possible to suppress vibration leakage from leaking to the base 51 side and propagating to the supporting arms 61 and 62, and to reduce the CI value.
When the strength permits, a through hole (not shown) is formed near the center of the base 51, for example, and stress is concentrated near the periphery of the through hole, so that vibration leakage is caused by the supporting arms 61 and 62. Can be suppressed and the CI value can be kept low.
As shown in FIG. 3, a portion sandwiched between the cut portions 71 and 72 is a connecting portion 73. The connecting portion 73 is integrally connected to a connecting portion 74 that is an extended portion extending on both sides on the other end side of the base portion 51. That is, the outermost portion (connecting portion 74) extended in the width direction of the base 51 is a portion connecting the pair of parallel supporting arms 61 and 62, and functions as a connecting portion.
Here, in FIG. 3, when the width dimension of the connecting portion 73 is r and the width dimension of the base portion 51 is e, r / e, which is the ratio of the width r of the connecting portion and the width e of the base portion, is approximately 40%. The r / e is more preferably 23% or more.

Next, the structure of the support arm will be described.
Since the support arm 61 and the support arm 62 have the same shape, the length u of the support arm 61 is 60 with respect to the total length a of the piezoelectric vibrating piece 32 when the support arm 61 is described with reference to FIG. It is necessary to obtain 80% to obtain a stable support structure.
Further, the outer corner portions 61a and 62a of the supporting arms 61 and 62 are chamfered in an R shape that is inwardly convex or outwardly convex, thereby preventing damage caused by chipping.

As for the joint location with the support arm, for example, only one location corresponding to the gravity center position G of the length dimension of the piezoelectric vibrating piece 32 can be selected with respect to the one support arm 61. However, as shown in FIG. 1, when the electrode portions 31-1 and 31-2 are set by selecting two points that are equidistant from the position of the center of gravity with the position of the center of gravity G interposed therebetween, the joining structure is further strengthened. It is preferable because it is stable.
In the case where one supporting arm is joined at one point, it is preferable that the adhesive application region has a length of 25% or more of the entire length a of the piezoelectric vibrating piece 32 in order to obtain sufficient joining strength.
As in this embodiment, when two joint points are provided (four places when both supporting arms are combined), the distance between the joint points should be 25% or more of the total length a of the piezoelectric vibrating piece 32. Is preferable for obtaining sufficient bonding strength.

Of the electrode portions 31-1, 31-2, 31-1, 31-2, at least one set of the electrode portions 31-1, 31-2 includes mounting terminals 41, 41 on the back surface of the package, conductive through holes, and the like. Connected with. The package 57 is hermetically sealed by housing the piezoelectric vibrating piece 32 and then bonding the transparent glass lid 40 using the sealing material 58.
The lid 40 is not a transparent material, and may be a structure in which, for example, a metal plate such as Kovar is joined by seam sealing or the like.

Here, in the present embodiment, the location where the supporting arms 61 and 62 extend, that is, the other end 53 of the base 51 is a distance BL (base length) sufficiently separated from the base 52 of the vibrating arms 35 and 36. L2 + (notch length)).
This distance BL is preferably a dimension that exceeds the arm width dimension W of the vibrating arms 35 and 36.
That is, when the vibrating arms 35 and 36 of the tuning fork-type vibrating piece flexurally vibrate, the range in which the vibration leakage is transmitted toward the base 51 correlates with the arm width dimension W of the vibrating arms 35 and 36. The inventor pays attention to this point, and has the knowledge that the base end of the supporting arms 61 and 62 must be provided at an appropriate position.

Therefore, in the present embodiment, a position exceeding the dimension corresponding to the arm width dimension W of the vibrating arm, starting from the root 52 of the vibrating arm, at the base 53 of the supporting arms 61 and 62 is determined. By selecting, the structure in which the vibration leakage from the vibrating arms 35 and 36 is more reliably suppressed from propagating to the supporting arms 61 and 62 side can be achieved. Therefore, in order to suppress the CI value and obtain the effect of the support arm described later, the position of 53 is the location of the base portion of the vibrating arms 35 and 36 (that is, one end portion of the base portion 51) 52. It is preferable that the distance from the above is the distance BL.
For the same reason, it is preferable that the locations where the cut portions 71 and 72 are formed are also locations where the arm width dimension W of the vibrating arms 35 and 36 exceeds the base 52 of the vibrating arms 35 and 36. . For this reason, the notches 71 and 72 are formed at positions closer to the vibrating arm than the portions where the supporting arms 61 and 62 are integrally connected to the base 51.
Since the support arms 61 and 62 are not involved in vibration, there is no special condition for the arm width dimension W. However, in order to ensure the support structure, it is preferable that the support arms 61 and 62 have a larger width than the vibration arm.

  Thus, in this embodiment, the arm width dimension W of the vibrating arms is about 50 μm, the distance MW between the vibrating arms is about 80 μm, and the width f of the supporting arms 61 and 62 is about 100 μm, so that the width BW of the base 51 is increased. 500 μm, which is substantially the same as the width of the piezoelectric vibrating piece 1 shown in FIG. The present embodiment can obtain the following effects while achieving such downsizing.

In the piezoelectric vibrating piece 32 of FIG. 1, the supporting arms 61 and 62 are joined to the package 57 side by the conductive adhesive 43, so that at the joint location due to a change in ambient temperature, a drop impact, or the like. The generated stress change oscillates at a bent distance from the joint portion of the supporting arms 61 and 62 to the other end 53 of the base 51 and a distance corresponding to the length of the base 51 exceeding the distance BL. The arms 35 and 36 are hardly affected, and therefore the temperature characteristics are particularly good.
In addition, the vibration leakage from the vibrating arms 35 and 36 that bend and vibrate on the contrary is separated by a predetermined length of the base 51 that exceeds the distance BL before reaching the supporting arms 61 and 62 that are separated from the base 51. Because of that, it hardly reaches.

Here, if the length of the base portion 51 is extremely short, it is conceivable that the component in which the bending vibration leaks spreads over the entire support arms 61 and 62, and it becomes difficult to control. Severe situations are avoided sufficiently.
Further, in addition to being able to obtain such an action, the support arms 61 and 62 are extended in the width direction from the other end 53 of the base 51 as shown in the figure, and outside the vibrating arms 35 and 36, Since the configuration extends in the same direction as the vibrating arm, the overall size can be made compact.
Further, in this embodiment, as shown in FIG. 1, the tips of the support arms 61 and 62 are formed so as to be closer to the base 51 than the tips of the vibrating arms 35 and 36. Also in this point, the size of the piezoelectric vibrating piece 32 can be made compact.

Further, as can be easily understood as compared with the configuration of FIG. 12, in FIG. 12, a conductive adhesive 7 and 8 are applied and joined to the extraction electrode 5 and the extraction electrode 6 which are close to each other. Therefore, in order to prevent them from coming into contact with each other, avoid the short circuit and apply the adhesive to a very narrow area (on the package side), or even after joining, perform the joining process while preventing the adhesive from flowing before hardening. It had to be an easy process.
On the other hand, in the piezoelectric vibrating piece 32 of FIG. 1, the electrode portions 31-1 and 3-2 corresponding to the middle portions of the supporting arms 61 and 62 separated from each other in the width direction of the package 57 are electrically connected. Since the adhesives 43 and 43 may be applied, there is almost no difficulty as described above, and there is no fear of a short circuit.

Further, in FIG. 3, in the piezoelectric vibrating piece 32, the length of the vibrating arm is L1, and the length of the base 51 is L2 (distance BL−cut portion length).
It is preferable that the width L3 of the connection portion where the support arm 62 is integrally connected to the base portion 51 is 60 μm or more and 100 μm or less. That is, it is difficult to manufacture the one having the width L3 of less than 60 μm. When L3 exceeds 100 μm, not only is the obstruction of miniaturization of the piezoelectric vibrating piece, but also the ratio L3 / h, which is the ratio of the length 51 of the base 51 and the width L3 of the connecting portion, is 20% or more and 40 % Or less becomes difficult.
Note that the width dimension L3 is a reduced width that is smaller than the original width dimension L3-1 of the connection part 74, and the width dimension of the reduced width part is L3. Can be regarded as L3 = L3-1.
This is due to the following reason.

According to the study by the present inventors, when the supporting arm 62, which is a joint to a package or the like, is joined, the temperature characteristics, in particular, the low temperature test is returned to the normal temperature due to the influence of the adhesive used there. It is considered that the influence of the residual stress at the time of propagation propagates along the path from the base 51 to the vibrating arm via the connecting portion 74 and the connecting portion 73. This residual stress adversely affects the flexural vibration of the vibrating arms 35 and 36. To prevent this, it is necessary to provide a portion where the stress is concentrated somewhere in this path.
However, as a result of various trials, it can be expected that a cut or the like is formed in a portion other than the joint portion of the support arms 61 and 62. However, the support arm itself for supporting the entire support arm itself is supported. The rigidity is lowered, and the influence of vibration leakage from the vibrating arm side comes out, and the result is not always satisfactory.
Further, as described later, it is possible to expect a considerably good effect by deepening the notches 71 and 72 and making the connecting portion 73 small, but it is slightly too close to the vibrating arm, so that the width dimension r of the connecting portion 73 is simply set. Satisfactory results could not be obtained only by reducing.
Therefore, regarding L3 / h, which is the ratio of the length dimension h of the base 51 and the width dimension L3 of the connection portion, by setting this to 40% or less, it is possible to obtain extremely good effects as will be described later. It is what I found.

Next, a preferable detailed structure of the piezoelectric vibrating piece 32 of the present embodiment will be described with reference to FIGS. 3 and 4.
Since the vibrating arms 35 and 36 of the piezoelectric vibrating piece 32 shown in FIG. 3 have the same shape, the vibrating arm 36 will be described. At the base end T where each vibrating arm extends from the base 51, the vibrating arm width is the widest. Then, a first reduced width portion TL that is suddenly reduced in width is formed between U positions that are separated from the position of T, which is the base portion of the vibrating arm 36, by a slight distance toward the distal end side of the vibrating arm 36. ing. Then, from the position of U, which is the end of the first reduced width portion TL, to the position of P toward the distal end side of the vibrating arm 36 further, that is, with respect to the vibrating arm, the reduced width gradually and continuously over the distance of CL. A second reduced width portion is formed.

  For this reason, the vibrating arm 36 is provided with high rigidity near the base close to the base by providing the first reduced width portion TL. Further, since the second reduced width portion CL is formed from the end U of the first reduced width portion toward the tip, the rigidity is continuously reduced. The portion P is an arm width change point P, which is a constricted position in terms of the shape of the vibrating arm 36, and can also be expressed as a constricted position P. In the vibrating arm 36, the arm width is further extended with the same dimension on the tip side from the arm width change point P, or preferably gradually increased slightly as illustrated.

  Here, the longer the long grooves 33 and 34 in FIG. 3, the higher the field efficiency of the material forming the vibrating arms 35 and 36. Here, with respect to the total length L1 of the vibrating arm, the tuning fork type vibration is increased as the length j (length of the long groove) from the base 51 of the long grooves 33 and 34 becomes at least about j / L1 = 0.7. It is known that the CI value of the piece decreases. For this reason, it is preferable that j / L1 = 0.5 to 0.7. In this embodiment, in FIG. 3, the total length L1 of the vibrating arm 36 is, for example, about 1250 μm.

In addition, when the length of the long groove is appropriately increased to sufficiently suppress the CI value, the CI value ratio of the piezoelectric vibrating piece 32 (CI value of harmonics / CI value of the fundamental wave) is next determined. It becomes a problem.
In other words, the CI value of the fundamental wave is reduced, and the CI value of the harmonic wave is also suppressed. When the CI value of the harmonic wave becomes smaller than the CI value of the fundamental wave, the harmonic wave easily oscillates. .
Therefore, not only the long groove is lengthened to lower the CI value, but also the arm width change point P is provided from the tip of the vibrating arm, thereby reducing the CI value and further reducing the CI value ratio (harmonic). CI value / basic wave CI value) can be increased.
In other words, the rigidity of the resonating arm 36 is reinforced at the base portion, that is, the vicinity of the base, by the first reduced width portion TL. Thereby, the flexural vibration of the vibrating arm can be further stabilized and the CI value can be suppressed.

Moreover, by providing the second reduced width portion CL, the vibration arm 36 gradually decreases in rigidity from the vicinity of the base toward the distal end side to the constriction position P where the arm width is changed, Further, there is no long groove 34 on the distal end side from the constricted position P, and the arm width is gradually increased, so that the rigidity is increased as going to the distal end side.
For this reason, it is considered that the “node” of vibration at the time of vibration in the second harmonic can be positioned on the more distal end side of the vibrating arm 36, which makes the long groove 34 longer and the piezoelectric material Even if the electric field efficiency is increased and the CI value is increased, the CI value of the second harmonic can be prevented from being lowered while the CI value of the fundamental wave is suppressed. Therefore, as shown in FIG. 3, it is preferable to provide the arm width change point P closer to the distal end side of the vibrating arm than the distal end portion of the long groove. Can prevent oscillation.

Further, according to the study of the present inventor, the above-mentioned j / L1 and the maximum width / maximum of the vibrating arm 36 when the length j from the base 51 of the long grooves 33 and 34 is set to the total length L1 of the vibrating arm. There is a correlation between the arm width reduction ratio M, which is a small value, and the CI value ratio (CI value of the second harmonic / CI value of the fundamental wave) corresponding thereto.
When j / L1 = 61.5%, the CI width ratio is set to 1 by increasing the arm width reduction ratio M, which is the value of the maximum width / minimum width of the vibrating arm 36, to be greater than 1.06. It has been confirmed that it can be made larger and oscillation due to harmonics can be prevented.
Thus, even if the whole is downsized, the CI value of the fundamental wave can be kept low, and a piezoelectric vibrating piece that does not deteriorate the drive characteristics can be provided.

Next, a more preferable structure of the piezoelectric vibrating piece 32 will be described.
The wafer thickness indicated by the dimension x in FIG. 4, that is, the thickness of the crystal wafer forming the piezoelectric vibrating piece is preferably 70 μm to 130 μm.
The total length of the piezoelectric vibrating piece 32 indicated by the dimension a in FIG. 3 is about 1300 μm to 1600 μm. The dimension L1, which is the entire length of the vibrating arm, is preferably 1100 to 1400 μm, and the total width d of the piezoelectric vibrating piece 32 is preferably 400 μm to 600 μm in terms of miniaturization of the piezoelectric device. Therefore, in order to reduce the size of the tuning fork, it is necessary to ensure the supporting effect that the width 51 of the base 51 is 200 to 400 μm and the width f of the supporting arm is 30 to 100 μm. .

Also, the dimension k between the vibrating arms 35 and 36 in FIG. 3 is preferably 50 to 100 μm. When the dimension k is less than 50 μm, when the outer shape of the piezoelectric vibrating piece 32 is formed by penetrating a quartz crystal wafer by wet etching, as will be described later, a deformed portion based on etching anisotropy, that is, a symbol in FIG. It is difficult to sufficiently reduce the fin-shaped convex portion in the plus X-axis direction on the side surface of the vibrating arm indicated by 81. If the dimension k is 100 μm or more, the flexural vibration of the vibrating arm may become unstable.
Furthermore, the dimensions m1 and m2 of the outer edge of the long groove 33 and the outer edge of the vibrating arm in the vibrating arm 35 (same as the vibrating arm 36) in FIG. 4 are preferably 3 to 15 μm. By setting the dimensions m1 and m2 to 15 μm or less, the electric field efficiency is improved, and by setting the dimensions m1 and m2 to 3 μm or more, it is advantageous for surely polarizing the electrodes.

In the vibrating arm 36 of FIG. 3, if the width dimension m of the first reduced width portion TL is 11 μm or more, a certain effect can be expected in suppressing the CI value.
In the vibrating arm 36 of FIG. 3, the position of the arm width change point P where the degree of widening that the tip side is wider than the arm width change point P is the position where the arm width of the vibrating arm 36 is minimized. It is preferable to increase the width by about 0 to 20 μm. If the width is increased beyond this, the tip of the vibrating arm 36 becomes too heavy, and the stability of bending vibration may be impaired.

  Also, a deformed portion 81 that protrudes in a fin shape in the plus X-axis direction is formed on one side surface outside the vibrating arm 35 (same for the vibrating arm 36) in FIG. This is formed as an etching residue due to crystal etching anisotropy when wet-etching the piezoelectric vibrating piece, preferably in an etching solution with hydrofluoric acid and ammonium fluoride, It is preferable to obtain a stable bending vibration of the vibrating arm 35 by reducing the protrusion amount v of the deformed portion 81 within 5 μm by etching for 9 hours to 11 hours.

  The width dimension of the long groove indicated by dimension g in FIG. 3 is preferably about 60 to 90% of the arm width c of the vibrating arm in the region where the long groove of the vibrating arm is formed. The thickness is preferably 40 μm to 60 μm. Since the first and second reduced width portions are formed in the vibrating arms 35 and 36, the arm width c varies depending on the position in the length direction of the vibrating arm, but the long groove is larger than the maximum width of the vibrating arm. The width g is about 60 to 90%. If the width of the long groove is smaller than this, the electric field efficiency is lowered and the CI value is increased.

Further, the total length h of the base 51 in FIG. 3 is conventionally about 30% with respect to the total length a of the piezoelectric vibrating piece 32, but this embodiment is about 15 to 25% due to the use of a notch or the like. It is possible to reduce the size.
The length h of the base 51 can be set to 150 μm to 300 μm, for example.
Preferably, the base 51 is provided with recesses or notches 71 and 72 on both side edges of the base 51 as in the embodiment of FIG. 1, and the depth (dimension q in FIG. 3) is For example, it can be about 80 μm.
Furthermore, in the present embodiment, L3 / h, which is a ratio between the length dimension h of the base portion and the width dimension L3 of the connection portion 74 where the support arms 61 and 62 are connected to the base portion 51 via the connecting portion 73. However, it is almost 40% or less. In this case, the ratio L3 / h is preferably 20% or more.
Thereby, the effect | action mentioned later can be exhibited.

Further, in this embodiment, in order to reduce the package size, the distance (dimension p) between the side surface of the base 51 and the supporting arms 61 and 62 is set to 30 to 100 μm.
As shown in FIG. 4, the excitation electrodes 37 and 38 of the piezoelectric vibrating piece 32 are connected to an AC power supply by cross wiring, and an alternating voltage as a drive voltage is applied from the power supply to the vibration arms 35 and 36. It has become so.

As a result, the vibrating arms 35 and 36 are excited so as to have opposite-phase vibrations, and in the fundamental mode, that is, in the fundamental wave, the vibrating arms 35 and 36 are flexibly vibrated so that the distal end sides of the vibrating arms 35 and 36 are moved closer to and away from each other. It is like that.
Here, for example, the fundamental wave of the piezoelectric vibrating piece 32 has a Q value of 12000, a capacitance ratio (C0 / C1): 260, a CI value of 57 kΩ, and a frequency of 32.768 kHz (“kilohertz”, the same applies hereinafter).
The second-order harmonics are, for example, Q value: 28000, capacity ratio (C0 / C1): 5100, CI value: 77 kΩ, and frequency: 207 kHz.

FIG. 5 is a circuit diagram illustrating an example of an oscillation circuit when a piezoelectric oscillator is configured using the piezoelectric vibrating piece 32 of the present embodiment.
The oscillation circuit 91 includes an amplification circuit 92 and a feedback circuit 93.
The amplifier circuit 92 includes an amplifier 95 and a feedback resistor 94. The feedback circuit 93 includes a drain resistor 96, capacitors 97 and 98, and the piezoelectric vibrating piece 32.
Here, the feedback resistor 94 in FIG. 5 can be about 10 MΩ (mega ohm), for example, and the amplifier 95 can be a CMOS inverter. The drain resistor 96 can be, for example, 200 to 900 kΩ (kiloohms), and the capacitor 97 (drain capacitance) and the capacitor 98 (gate capacitance) can be 10 to 22 pF (picofarad), respectively.

The piezoelectric vibrating piece 32 and the piezoelectric device 30 of the present embodiment are configured as described above, and a characteristic operation effect will be described.
As already described, in the piezoelectric vibrating piece 32 of the present embodiment, the length h of the base 51 and the supporting arms 61 and 62 are connected to the base 51 via the connecting portion 73 in FIG. The effect as shown in FIG. 6 can be expected when L3 / h, which is a ratio to the width dimension L3 of the connecting portion 74, is approximately 40% or less.

That is, in FIG. 6, the horizontal axis represents the value L3 / h, and the vertical axis represents the frequency shift (deviation) with respect to the ideal temperature characteristic at minus 50 ° C.
In the figure, the frequency shift becomes extremely small in the region where L3 / h is 40% or less. Further, in the region where L3 / h is 35% or less, the frequency shift is further reduced. And the lower limit of L3 / h is about 20%, and when it becomes smaller than the lower limit value, there is a problem that it is broken in the assembly process because of insufficient rigidity.

More preferably, r / e which is the ratio of the width dimension r of the connecting portion 73 of the piezoelectric vibrating piece 32 and the width dimension e of the base portion 51 in FIG. 3 is 23% or more and 40% or less.
When the ratio r / e is less than 23%, it has been confirmed that the connecting portion may be broken by an external impact such as a drop impact.
For this reason, when the ratio r / e is 23% or more and 40% or less, each resonating arm as the excitation unit has an influence from the support arm including the joint to the package or the like. A piezoelectric vibrating piece that is extremely difficult to receive and that is not easily damaged by an external impact can be obtained.

Next, FIG. 7 shows the result of the temperature characteristic test of the piezoelectric vibrating piece 32 of this embodiment, and FIG. 8 correspondingly shows the excitation electrodes 37 and 38 of the piezoelectric vibrating piece 32 of FIG. The relationship between the thickness of each of the chromium layer, which is the underlying metal layer to be formed, and the gold layer, which is the electrode layer, and the frequency distortion (frequency variation) at a low temperature is summarized with symbols of circles, triangles, and crosses.
As shown in FIG. 7, the circle has the best results, the frequency variation is very small in the low temperature region, the triangle is slightly distorted, but the result is almost good, and the X is a favorable result. Shows no case.

That is, when the film thickness of the chromium layer, which is the base layer of the electrode film constituting the excitation electrodes 37 and 38, is 300 mm or less and the film thickness of the gold layer is 500 mm or less, good results of the triangle or more can be obtained. Can do.
That is, by setting the chromium layer to 300 mm or less, the film stress of the electrode part at low temperature does not become too large. In addition, since the thickness of the gold layer is 500 mm or less, an increase in electrode formation cost can be suppressed. As a result, even if the piezoelectric vibrating piece 32 is formed in a small size, the CI value that hinders flexural vibration at low temperatures is suppressed, frequency distortion at low temperatures is prevented, and sufficient conduction performance is exhibited. A good piezoelectric vibrating piece can be provided.

In FIG. 8, when the film thickness of the chromium layer, which is the base layer of the electrode film constituting the excitation electrodes 37, 38, is 200 mm or less, the film thickness of the gold layer, which is the electrode film, is 400 mm or less. And preferred.
That is, when the film thickness of the chromium layer is suppressed to 200 mm or less, the film thickness of the gold layer is set to 400 mm or less to obtain a sufficient film thickness, and the frequency distortion at a low temperature can be prevented even if the conduction performance is improved.

Furthermore, in FIG. 8, when the thickness of the chromium layer is 100 mm or less, it is more preferable that the thickness of the gold layer is 500 mm or less.
That is, if the film thickness of the chromium layer is suppressed to 100 mm or less, the film thickness of the gold layer can be set to 500 mm or less to obtain a sufficient film thickness, and even if the conduction performance is improved, frequency distortion at a low temperature can be prevented.

(Piezoelectric device manufacturing method)
Next, an example of a method for manufacturing the above-described piezoelectric device will be described with reference to the flowchart of FIG.
(Method for manufacturing lid and package)
The piezoelectric vibrating piece 32, the package 57, and the lid body 40 of the piezoelectric device 30 are manufactured separately.
The lid body 40 is prepared as a lid body having a size suitable for sealing the package 57 by cutting a glass plate of a predetermined size, for example, a borosilicate glass plate glass.
As described above, the package 57 is formed by laminating a plurality of substrates formed by molding an aluminum oxide ceramic green sheet and then sintering. At the time of molding, each of the plurality of substrates forms a predetermined hole on the inner side thereof, so that a predetermined internal space S is formed on the inner side when stacked.

(Method for manufacturing piezoelectric vibrating piece)
First, a piezoelectric substrate is prepared, and the outer shape of a predetermined number of piezoelectric vibrating pieces is simultaneously formed by etching from one piezoelectric substrate (outer shape etching).
Here, as the piezoelectric substrate, for example, a quartz wafer having a size capable of separating a plurality or a large number of the piezoelectric vibrating reeds 32 among the piezoelectric materials is used. Since this piezoelectric substrate forms the piezoelectric vibrating piece 32 of FIG. 3 (the piezoelectric vibrating piece 32 of FIG. 1 and the like are manufactured in the same manner) as the process proceeds, the X axis shown in FIG. 1 or FIG. It is cut from a piezoelectric material, for example, a single crystal of quartz, so that the axis is the mechanical axis and the Z axis is the optical axis. In addition, when cutting from a single crystal of quartz, in the orthogonal coordinate system composed of the X-axis, Y-axis, and Z-axis described above, it rotates in the range of 0 to 5 degrees (θ in FIG. 11) clockwise around the Z-axis. Then, the crystal Z plate cut out is cut and polished to a predetermined thickness.

In the outer shape etching, the outer shape of the piezoelectric vibrating piece is etched using, for example, a hydrofluoric acid solution with respect to the piezoelectric substrate exposed as a portion outside the outer shape of the piezoelectric vibrating piece using a mask such as a corrosion-resistant film (not shown). . As the corrosion resistant film, for example, a metal film in which gold is vapor-deposited with chromium as a base can be used. This etching process is wet etching and changes depending on the concentration, type, temperature, and the like of the hydrofluoric acid solution.
Here, in the wet etching in the outer shape etching process, the following etching anisotropy is exhibited with respect to the mechanical axis X, the electric axis Y, and the optical axis Z shown in FIG.
That is, with respect to the piezoelectric vibrating piece 32, the etching rate in the XY plane is in the plus X direction, and the etching progresses in the plane of 120 degrees with respect to the X axis and in the minus 120 degrees direction. The progress of etching on the inner surface in the direction of plus 30 degrees with respect to the X axis in the minus X direction and in the direction of minus 30 degrees is slow.
Similarly, the progress of etching in the Y direction is faster in the plus 30 degree direction and the minus 30 degree direction, and in the plus Y direction, the plus 120 degree direction and the minus 120 degree direction are delayed with respect to the Y axis.

Due to such anisotropy in etching progress, the piezoelectric vibrating piece 32 is formed with a deformed portion protruding in a fin shape on the outer side surface of each vibrating arm, as indicated by reference numeral 81 in FIG. .
However, in this embodiment, etching is performed using hydrofluoric acid and ammonium fluoride as an etchant for a sufficient time, that is, a sufficient time of 9 to 11 hours, so that in FIG. The protruding amount v of the deformed portion 81 described can be made extremely small within 5 μm (ST11).
In this process, the outer shape including the cut portions 71 and 72 of the piezoelectric vibrating piece 32 is formed at the same time, and at the end, a large number of piezoelectric vibrating pieces 32 connected to the vicinity of the base 51 by thin integrated portions to the crystal wafer. A finished product can be obtained.

(Half etching process for groove formation)
Next, a groove forming resist (not shown) is used to form the shape shown in FIG. 4. Under the same etching conditions, the front and back surfaces of the vibrating arms 35 and 36 are respectively wet-etched to form bottom portions corresponding to the long grooves (ST12).
Here, referring to FIG. 4, the groove depth indicated by the symbol t is about 30 to 45% with respect to the entire thickness x. If t is 30% or less of the total thickness x, the electric field efficiency may not be sufficiently improved. If it is 45% or more, the rigidity may be insufficient to adversely affect flexural vibration or the strength may be insufficient.

Note that one or both of the outer shape etching and the groove etching may be formed by dry etching. In that case, for example, on the piezoelectric substrate (crystal wafer), the outer shape of the piezoelectric vibrating piece 32 and the region corresponding to the long groove after the outer shape is formed are covered with a metal mask each time. In this state, for example, it can be housed in a chamber (not shown), and an etching gas can be supplied at a predetermined degree of vacuum to generate etching plasma for dry etching. That is, for example, a freon gas cylinder and an oxygen gas cylinder are connected to a vacuum chamber (not shown), and further, an exhaust pipe is provided in the vacuum chamber so that it is evacuated to a predetermined degree of vacuum. Yes.
When a DC voltage is applied in a state where the inside of the vacuum chamber is evacuated to a predetermined degree of vacuum, a freon gas and an oxygen gas are sent, and the mixed gas is filled up to a predetermined atmospheric pressure, plasma is generated. appear. The mixed gas containing ionized particles hits the piezoelectric material exposed from the metal mask. Due to this impact, it is physically scraped off and scattered, and etching proceeds.

(Electrode formation process)
Next, the driving shown in FIG. 1 is performed by photolithography using a resist that covers the entire surface of a metal to be an electrode, such as gold, by vapor deposition or sputtering, and then exposes a portion where the electrode is not formed. An electrode is formed (ST13).
Thereafter, weighting electrodes (metal coatings) 21 and 21 are formed on the tip portions of the vibrating arms 35 and 36 by sputtering or vapor deposition (ST14). The weighting electrodes 21 and 21 are not energized and used for driving the piezoelectric vibrating piece 32 but are used for frequency adjustment described later.

Next, rough adjustment of the frequency is performed on the wafer (ST15). Coarse adjustment is frequency adjustment by a mass reduction method in which part of the weighted electrodes 21 and 21 is partially evaporated by irradiating an energy beam such as laser light.
Subsequently, the thin integrated portion with respect to the wafer described above is broken to form individual pieces of piezoelectric vibrating pieces 32 (ST16).
Next, as described in FIG. 1, the conductive adhesives 43, 43, 43, 43 are applied to the electrode portions 31-1, 31-2, 31-1, 31-2 of the package 57, and then The supporting arms 61 and 62 are mounted on the piezoelectric element, and the piezoelectric vibrating piece 32 is bonded to the package 57 by heating and curing the adhesive (ST17).
As the conductive adhesive 43, for example, a binder component using a synthetic resin or the like is mixed with conductive particles such as silver particles, which can perform mechanical joining and electrical connection at the same time. It is.

Next, the lid is joined.
When sealing the package 57 with the transparent lid 40, the lid 40 is joined to the package 57 after the piezoelectric vibrating piece 32 is joined in ST17 (ST18-2).
In this case, for example, a heating step is performed in which the low melting point glass or the like is heated to join the lid 40 to the package 57. At this time, gas is generated from the low melting point glass or the conductive adhesive.
Therefore, by heating, such a gas is discharged from the through hole 27 described in FIG. 2 (degassing), and thereafter, metal spheres or pellets preferably made of gold tin or the like are disposed in the step portion 29 in a vacuum. Then, it is melted by irradiating it with a laser beam or the like. Thereby, the sealing material (metal filler) 28 in FIG. 2 hermetically seals the through hole 27 (ST19-2).
Next, as shown in FIG. 2, the laser beam is externally applied to the vibrating arm 35 of the piezoelectric vibrating piece 32 and / or the distal end side of the weighted electrode 21 of the vibrating arm 36 so as to transmit the transparent lid 40 made of glass or the like. The frequency adjustment as a fine adjustment is performed by the mass reduction method (ST20-2). Next, the piezoelectric device 30 is completed through necessary inspections.

Alternatively, it is more preferable to use a metal object as the lid 40 and join it as shown in FIG.
Before joining the lid, by energizing the package with the piezoelectric vibrating piece 32 joined, and irradiating part of the weighting electrodes 21 and 21 of the vibrating arms 35 and 36 with an energy beam such as laser light, Partially evaporate and finely adjust the frequency by the mass reduction method (ST18-1).
Next, the lid is sealed.
FIG. 9 is a partially cut end view for explaining the joined state of the lid body 40.
In this case, the cover 40 is preferably made of Kovar, which is an alloy of cobalt and iron.
A metallized portion 82 is formed in advance on the upper end of the package 57. As the metallized portion 82 formed on the package side, for example, layers of tungsten (W) 82a, nickel (Ni) 82b, and gold (Au) 82c are formed in order from the bottom to the top. Alternatively, a layered structure of molybdenum (Mo) 82a, nickel (Ni) 82b, and gold (Au) 82c may be used.

On the other hand, a plated layer 83 in which a gold (Au) layer 83b is plated on the surface of a nickel (Ni) layer 83a is formed on at least the joint surface of the cover 40 made of Kovar. That is, gold is exposed at the joint surfaces of both the package and the lid, and a gold (Au) -germanium (Ge) alloy 84 is used as the brazing material 58.
That is, the brazing material 84 of gold germanium is used to be housed in a heating chamber and heated to melt the brazing material and join (ST19-1).

Here, in the joining process of the lid 40, heat is generated, and at this time, gas is generated from the conductive adhesive or the like, or the moisture on the inner surface of the package is vaporized.
Therefore, as in ST19-2, for example, it is accommodated in a vacuum chamber and heated, and the gas generated during the above-described lid bonding is discharged from the through hole 27 described in FIG. 2 (degassing). Then, preferably, metal spheres or pellets made of a gold-germanium (Au—Ge) alloy are disposed in the stepped portion 29 in a vacuum and melted by irradiating with laser light or the like. Thereby, the sealing material (metal filler) 28 in FIG. 2 hermetically seals the through hole 27 (ST20-1).
Next, the piezoelectric device 30 is completed through necessary inspections.

  Thus, when the metal lid 40 is used, the size is limited by using a gold-germanium alloy brazing material as compared with the case where the glass lid is joined with the low melting point glass brazing material. Even if the sealing margin D is sufficient, sufficient bonding strength can be obtained. In particular, in the gas discharge using the through-hole 27 which is a sealing hole, even when heated sufficiently, the bonding of the lid body 40 is not affected, and excellent airtightness can be realized. Further, even when the piezoelectric device 30 is passed through a reflow furnace in the mounting process, the brazing material does not remelt, and the bonding performance is excellent.

The present invention is not limited to the above-described embodiment. Each configuration of each embodiment can be appropriately combined or omitted, and can be combined with other configurations not shown.
The present invention is not limited to the case where the piezoelectric vibrating piece is accommodated in a box-shaped package, the case where the piezoelectric vibrating piece is accommodated in a cylindrical container, the piezoelectric vibrating piece functioning as a gyro sensor, Can be applied to any piezoelectric device using a piezoelectric vibrating piece regardless of the name of a piezoelectric vibrator, a piezoelectric oscillator, or the like. Further, the piezoelectric vibrating piece 32 forms a pair of vibrating arms, but is not limited to this, and the number of vibrating arms may be three or four or more.

The schematic plan view which shows embodiment of the piezoelectric device of this invention. The AA cut | disconnection end elevation of FIG. FIG. 2 is a schematic enlarged plan view of the piezoelectric vibrating piece according to the embodiment of FIG. 1. The BB line | wire cut end elevation of the vibration arm part of FIG. FIG. 2 is a circuit diagram illustrating an example of an oscillation circuit using the piezoelectric vibrating piece of FIG. 1. FIG. 4 is a graph showing a frequency shift (deviation) with respect to the dimensions and ideal temperature characteristics of the piezoelectric vibrating piece in FIG. 3. The graph which shows the result of the temperature characteristic test of the piezoelectric device (piezoelectric vibrating piece) of FIG. The table | surface which shows the relationship between each film thickness of chromium and gold which comprises the electrode film of an excitation electrode, and the frequency characteristic in low temperature. FIG. 2 is a partially cut end view illustrating an example of a bonding structure of a lid body of the piezoelectric device of FIG. 1. The flowchart which shows an example of the manufacturing method of the piezoelectric device of this invention. The figure which shows the coordinate axis of a crystal Z board. FIG. 6 is a schematic plan view of a conventional piezoelectric vibrating piece. The graph which shows the result of the temperature characteristic test of the conventional type small piezoelectric vibrating piece. The graph which shows the relationship between the Young's modulus of the base layer of an electrode, and temperature.

Explanation of symbols

DESCRIPTION OF SYMBOLS 30 ... Piezoelectric device, 32 ... Piezoelectric vibrating piece, 33, 34 ... Long groove, 35, 36 ... Vibrating arm, 51 ... Base, 61, 62 ... Arm for support

Claims (5)

A base portion formed of a piezoelectric material, and a plurality of vibrating arms extending from one end side of the base portion,
An excitation electrode as a drive electrode to which a drive voltage is applied is formed on the vibrating arm,
The excitation electrode includes a chromium layer as a base layer and a gold layer as an electrode layer,
The piezoelectric vibrating piece, wherein the chromium layer has a thickness of 300 mm or less and the gold layer has a thickness of 500 mm or less.   The base portion has a predetermined length, is integrally joined to the base portion via a connecting portion, and is extended in the width direction on the other end side separated from the one end side of the base portion by a predetermined distance. 2. The piezoelectric vibrating piece according to claim 1, further comprising a supporting arm that extends in the same direction as the vibrating arm outside the vibrating arm.   3. The piezoelectric vibrating piece according to claim 1, wherein when the chromium layer has a thickness of 200 mm or less, the gold layer has a thickness of 400 mm or less.   3. The piezoelectric vibrating piece according to claim 1, wherein when the film thickness of the chromium layer is 100 mm or less, the film thickness of the gold layer is 500 mm or less. A piezoelectric device containing a piezoelectric vibrating piece in a package or case,
The piezoelectric vibrating piece is
A base of a predetermined length formed of a piezoelectric material;
A plurality of vibrating arms extending from one end of the base;
It is integrally joined to the base portion via a connecting portion, extends in the width direction on the other end side separated from the one end side of the base portion by a predetermined distance, and on the outside of the vibrating arm, the vibrating arm And a supporting arm extending in the same direction as
An excitation electrode as a drive electrode to which a drive voltage is applied is formed on the vibrating arm,
The excitation electrode includes a chromium layer as a base layer and a gold layer as an electrode layer,
The piezoelectric device, wherein the chromium layer has a thickness of 100 to 300 mm and the gold layer has a thickness of 200 to 500 mm.

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