JP4301201B2 - Piezoelectric oscillator - Google Patents

Description

  The present invention relates to an improvement of a piezoelectric vibrating piece and a piezoelectric device in which the piezoelectric vibrating piece is accommodated in a package or case.

Piezoelectric vibrators and piezoelectrics in small information devices such as HDDs (hard disk drives), mobile computers, IC cards, mobile communication devices such as mobile phones, car phones, and paging systems, and piezoelectric gyro sensors Piezoelectric devices such as oscillators are widely used.
12 is a schematic plan view showing an example of a piezoelectric vibrating piece conventionally used in a piezoelectric device, and FIG. 13 is an end view taken along line AA in FIG.
In the figure, a piezoelectric vibrating reed 1 is formed by etching a piezoelectric material such as quartz to form an outer shape as a tuning fork type piezoelectric vibrating reed as shown in the figure, and is a rectangular shape attached to a package (not shown) or the like. A base 2 and a pair of vibrating arms 3 and 4 extending rightward from the base 2 in the drawing are provided, and long grooves 3a and 4a are formed on the main surfaces (front and back surfaces) of these vibrating arms, and necessary driving is performed. Electrode is formed (see Patent Document 1).
In such a piezoelectric vibrating piece 1, when a driving voltage is applied via a driving electrode, the piezoelectric vibrating piece 1 is flexibly oscillated so that the distal ends of the vibrating arms 3 and 4 approach and separate from each other. The signal of the frequency of is extracted.

By the way, such a piezoelectric vibrating piece 1 is required to be formed in a small size in accordance with the downsizing of the various products to which the piezoelectric device using the piezoelectric vibrating piece 1 is attached. For this reason, the piezoelectric vibrating piece 1 must also be formed as small as possible, and in particular, it is required to reduce the total length AL1. Since downsizing of products is constantly progressing, the piezoelectric vibrating reed 1 has a structure that can be made smaller.
Here, the frequency f of the piezoelectric vibrating piece 1 which is a tuning-fork type piezoelectric vibrating piece as shown in the figure is W / (l × l), where l is the length of the vibrating arms 3 and 4 and W is the arm width. Proportional.
This means that when the piezoelectric resonator element 1 that is long in one direction is to be miniaturized and the total length AL1 in FIG. 12 is to be reduced, the frequency is increased if the length l of the vibrating arm is shortened. To do. Further, when the width W of the vibrating arm is decreased, the frequency is decreased. From this, in order to maintain the conventional frequency and reduce the size, it is necessary to reduce the arm width w while shortening the length of the vibrating arm to some extent.

JP 2002-261575 A

  By the way, in reducing the size of the piezoelectric vibrating reed 1, the length l of the vibrating arms 3 and 4 is shortened and the arm width W is reduced in order to maintain the conventional frequency, for example, 32 kHz (32.768 kHz). However, when processing the small piezoelectric vibrating piece 1, particularly when trying to reduce the arm width w while maintaining the characteristics, there are the following difficulties.

Specifically, it is necessary to process the long grooves 3a and 4a as shown in FIG. The dimension t in FIG. 13 is difficult to change because it is constrained by the conditions of the processing material such as a quartz wafer, and when it is 100 μm so far, it is 100 μm even when miniaturized.
On the other hand, the arm width W is assumed to be about 50 μm due to the downsizing of what was previously 100 μm. When the arm width is 100 μm, the groove width C1 is about 70 μm and the side wall thicknesses S1 and S1 are about 15 μm. If the arm width W is about 50 μm, the groove width C1 is about 40 μm and the side wall thicknesses S1 and S1. Must be about 5 μm each.

When such a piezoelectric vibrating piece is produced, the rigidity of the vibrating arms 3 and 4 is greatly reduced, and the amplitude in the Z direction in FIG. The bending vibrations along the X direction of the arms 3 and 4 become bending vibrations as exaggerated by arrows SF and SF.
FIG. 14 is a graph showing drive characteristics when the piezoelectric vibrating piece is miniaturized with the conventional structure. When the drive voltage level is gradually increased along the horizontal axis of the figure, the frequency change on the vertical axis changes. It occurs in the negative direction. This indicates that the component of the Z direction vibration in FIG. 13 increases, resulting in vibration with a lot of energy loss, which causes an increase in CI (crystal impedance) value.

  As an effective measure for suppressing the CI value, there is a method in which the long grooves 3a and 4a described with reference to FIG. 12 are lengthened to increase the area for forming the driving electrode. However, the piezoelectric vibrating piece has a plurality of vibration modes, and the fundamental wave that is usually used is, for example, 32.768 kHz, whereas the second harmonic of the piezoelectric vibrating piece 1 is around 250 kHz. . The long grooves 3a and 4a can be lengthened to lower the CI value of the fundamental wave. However, since the CI value of the second harmonic is also lowered, as shown in FIG. 15, with many products, the CI value ratio that is the CI value of the harmonic / the CI value of the fundamental wave is maintained in the conventional structure. Is smaller than 1, and it is easy to oscillate with the second harmonic instead of the fundamental wave.

  The present invention has been made in order to solve the above-described problems. In order to reduce the size of a tuning fork-type vibrating piece, the CI value is suppressed and the vibration is suppressed by suppressing the movement of the vibrating arm in an unnecessary direction. It is an object of the present invention to provide a piezoelectric vibrating piece that does not deteriorate characteristics and a piezoelectric device using such a piezoelectric vibrating piece.

The object is to form a base made of a piezoelectric material , a plurality of vibrating arms formed integrally with the base and extending from one end of the base, and a long groove formed along the longitudinal direction of each vibrating arm, A driving electrode formed in a long groove, and each of the vibrating arms includes a reduced width portion that reduces the width of the vibrating arm toward a distal end side from a base portion of the vibrating arm, and each of the reduced width portions. There is a change point P of the width change at which the width dimension of the vibrating arm turns to be constant or increased at the tip of the vibrating arm, and the change point P is located further on the tip side of the vibrating arm than the tip of the long groove, The reduced width portion includes a first reduced width portion, and a second reduced width portion that is further reduced from the terminal end of the first reduced width portion toward the arm distal end side, and the first reduced width portion. The piezoelectric resonator element that contracts more rapidly than the second contracted portion , and the first terminal of the piezoelectric resonator element. And an amplifier using a CMOS inverter connected to a force and having a second terminal of the piezoelectric vibrating piece connected to an output .

Further, the base portion has a cut portion formed by reducing the width of the piezoelectric material in the width direction, and the cut portion is 1.2 times as large as the arm width from the root of each vibrating arm. It may be formed on the base part with the above distance.

  Further, a deformed portion protruding in the plus X-axis (mechanical axis) direction may be formed on the side surface of each vibrating arm so as to be within 5 μm.

  Further, the maximum width / minimum width = M value as the width reduction ratio of the vibrating arm is determined in relation to the ratio of the length of the long groove to the arm length of the vibrating arm = N. In the case of 61.5%, the M may be 1.06 or more.

  The first reduced width portion may have a width of 11 μm or more.

1 to 4 show an embodiment of the piezoelectric device of the present invention, FIG. 1 is a schematic plan view thereof, FIG. 2 is a schematic sectional view taken along line BB of FIG. 1, and FIG. 3 is a piezoelectric device of FIG. 4 is a schematic plan view showing an embodiment of a piezoelectric vibrating piece used in FIG. 4, and FIG. 4 is an end view taken along the line CC of FIG.
As shown in FIGS. 1 and 2, the package 57 is formed in a rectangular box shape, for example. Specifically, the package 57 is formed by laminating a first substrate 54, a second substrate 55, and a third substrate 56. For example, as an insulating material, a ceramic green made of aluminum oxide is used. After the sheet is formed into the illustrated shape, it is sintered.
The bottom of the package 57 has a through hole 27 for degassing in the manufacturing process. The through hole 27 is formed in the first hole 25 formed in the first substrate 54 and the second substrate 55, has an outer diameter smaller than that of the first hole 25, and the first hole 25. The second hole 26 communicates with the second hole 26.
The through hole 27 is sealed with a sealing material 28 so that the inside of the package 57 is airtight.

As shown in FIG. 2, the package 57 forms a space of the internal space S by removing the material inside the second substrate 56. This internal space S is a housing space for housing the piezoelectric vibrating piece 32. Then, on the electrode portions 31, 31 formed on the second substrate 55, the portions of the extraction electrodes 37 a, 38 a provided at the base portion of the piezoelectric vibrating piece 32 are placed using the conductive adhesives 43, 43. Are joined. The electrode portions 31 and 31 are connected to mounting terminals 41 and 42 on the back surface of the package through conductive through holes. The package 57 is hermetically sealed in a vacuum state by housing the piezoelectric vibrating piece 32 in a vacuum state using a vacuum chamber or the like and then bonding a transparent glass lid 40 using a sealing material 38. Is sealed. Thus, after sealing the lid 40, the laser beam LB is irradiated from the outside to trim the electrode of the piezoelectric vibrating piece 32 and adjust the frequency.
The lid 40 may be a metal plate such as Kovar. In this case, the frequency of the piezoelectric vibrating piece 32 cannot be adjusted by irradiating the laser beam LB from the outside.

The piezoelectric vibrating piece 32 is formed of, for example, quartz, and a piezoelectric material such as lithium tantalate or lithium niobate can be used in addition to quartz. As shown in FIG. 3, the piezoelectric vibrating piece 32 includes a base 51 fixed to the package 57 side, and a pair of vibrations extending in parallel with the base 51 as a base end in a bifurcated manner toward the top in the figure. Arms 35 and 36 are provided.
Long grooves 33 and 34 extending in the length direction are preferably formed on the front and back of the main surfaces of the vibrating arms 35 and 36, respectively. As shown in FIGS. 3 and 4, driving electrodes are formed in the long grooves. Excitation electrodes 37 and 38 are provided. The tuning fork-shaped outer shape of the piezoelectric vibrating piece 32 and the long groove provided in each vibrating arm should be precisely formed by wet etching a material such as a quartz wafer with a hydrofluoric acid solution or dry etching, for example. Can do.

The excitation electrodes 37 and 38 are formed in the long grooves 33 and 34 and on the side surfaces of the vibrating arms, and the electrodes in the long grooves and the electrodes provided on the side surfaces of each vibrating arm are paired. The excitation electrodes 37 and 38 are respectively routed to the extraction electrodes 37a and 38a described in FIG. As a result, when the piezoelectric device 30 is mounted on a mounting substrate or the like, an external driving voltage is applied from the mounting terminals 41 and 42 to the lead electrodes 37a and 38a of the piezoelectric vibrating piece 32 via the electrode portions 31 and 31, respectively. To the excitation electrodes 37 and 38.
Then, by applying a driving voltage to the excitation electrodes in the long grooves 33 and 34, the electric field efficiency inside the region where the long grooves of the respective vibrating arms are formed can be increased during driving.

That is, as shown in FIG. 4, the excitation electrodes 37 and 38 are connected to an AC power supply by cross wiring so that an alternating voltage as a drive voltage is applied to the vibrating arms 35 and 36 from the power supply. It has become.
As a result, the vibrating arms 35 and 36 are excited so as to have opposite-phase vibrations, and in the fundamental mode, that is, in the fundamental wave, the vibrating arms 35 and 36 are flexibly vibrated so that the distal end sides of the vibrating arms 35 and 36 are moved closer to and away from each other. It is like that.
Here, for example, the fundamental wave of the piezoelectric vibrating piece 32 has a Q value of 12000, a capacitance ratio (C0 / C1): 260, a CI value of 57 kΩ, and a frequency of 32.768 kHz (“kilohertz”, the same applies hereinafter).
The second-order harmonics are, for example, Q value: 28000, capacity ratio (C0 / C1): 5100, CI value: 77 kΩ, and frequency: 207 kHz.

  Further, preferably, in the base portion 51, as in the resonator element of FIG. 12, recesses or notches 71 and 71 formed on the both side edges of the base portion 51 by partially reducing the width in the width direction of the substrate 51. Is provided. The position of the cut portion will be described later. By forming the notches 71 and 71 in the base 51, it is possible to greatly reduce the leakage of vibration to the base 51 due to the bending vibrations of the vibrating arms 35 and 36, and to obtain the effect of suppressing the CI value. it can.

  Further, in the piezoelectric vibrating piece 32, the vibrating arms 35 and 36 are formed to have a shape as shown in FIG. Since each vibrating arm has the same shape, the vibrating arm 36 will be described. The base arm T extending from the base 51 has the widest vibrating arm width. Then, a first reduced width portion TL that is suddenly reduced in width is formed between U positions that are separated from the position of T, which is the root of the vibrating arm 36, by a slight distance toward the distal end side of the vibrating arm 36. Yes. Then, from the position of U, which is the end of the first reduced width portion TL, to the position of P toward the distal end side of the vibrating arm 36 further, that is, with respect to the vibrating arm, the reduced width gradually and continuously over the distance of CL. A second reduced width portion is formed. It should be noted that from the position P in FIG. 3 to the distal end side of the vibrating arm, it may be gradually widened as shown, or the arm width may be hardly changed. Then, when the arm width on the tip side from the position of P is not changed, the electrode film (metal coating) in the region may be thickened in the electrode forming step described later to increase the weight.

For this reason, the vibrating arm 36 is provided with high rigidity near the base close to the base by providing the first reduced width portion TL. Further, since the second reduced width portion is formed from the end U of the first reduced width portion toward the tip, the rigidity is continuously reduced. The portion P is an arm width change point P, which is a constricted position in terms of the shape of the vibrating arm 36, and can also be expressed as a constricted position P. In the vibrating arm 36, the arm width is further extended with the same dimension at the tip side from the constricted position P, or gradually enlarged as shown in the figure.
Here, as the long grooves 33 and 34 in FIG. 3 are longer, the electric field efficiency of the material forming the vibrating arms 35 and 36 is improved, and the length of the long grooves 33 and 34 from the base 51 with respect to the entire length L of the vibrating arms. It is known that the CI value of the tuning fork type resonator element decreases as PL becomes longer at least up to about PL / L = 0.7. In this embodiment, in FIG. 3, the total length L of the vibrating arm 36 is, for example, about 1250 μm.

Assuming the above structure, in this embodiment, in FIG. 3, the total length L of the vibrating arm 36 is, for example, about 1250 μm, and the following relationship is established.
In FIG. 5, when the constriction position P that is the arm width change point P is taken on the horizontal axis, the piezoelectric vibration shown on the vertical axis depends on where the constriction position P is in the longitudinal direction of the vibrating arm. The change of the CI value of the piece 32 is shown. The percentage on the horizontal axis of the graph of FIG. 5 indicates the ratio of the length CL from the base to the constriction position P when the total length L of the vibrating arm is “1”. The position 0 on the horizontal axis is the tip position of the long groove 34 indicated by the length PL in FIG. 3, and the position 0 indicates that there is a constriction position (change point) P at the tip position of the long groove 34. Show.
Referring to FIG. 5, the length PL of the long groove is set to an appropriate length as described above, and the CI value is sufficiently suppressed. At the same time, the constriction position P with respect to the tip position of the long groove. It can be seen that the CI value varies greatly depending on whether or not the above is provided. In addition, the CI value can be drastically reduced by providing the constriction position (arm width change point) P further on the tip side of the vibrating arm than the tip of the long groove.

In FIG. 6, the horizontal axis indicates at which position in the length direction of the vibrating arm the constriction position P exists, and the vertical axis indicates the CI value of the piezoelectric vibrating piece 32 corresponding to the position. The change in the ratio (CI value of harmonics / CI value of fundamental wave) is shown. The horizontal axis of the graph of FIG. 6 is the same as that of FIG. When the CI value ratio is smaller than 1, the CI value of the fundamental wave becomes larger than the CI value of the harmonic wave, and oscillation is easily caused by the harmonic wave.
Referring to FIG. 6, if the length PL of the long groove is set to an appropriate length as described above and the CI value is sufficiently suppressed, the CI value of the piezoelectric vibrating piece 32 even if the constriction position P is displaced to some extent. The ratio (CI value of harmonics / CI value of fundamental waves) can be maintained at a value larger than 1, and the CI value ratio becomes larger as the constriction position P is closer to the tip, and oscillation with harmonics is difficult.
Thus, with respect to the vibrating arm 36 of FIG. 3, the CI value decreases as the long groove 34 is lengthened.
By providing the constriction position (change point) P from the tip of the vibrating arm, it is possible to further increase the CI value ratio while reducing the CI value. For this reason, the constriction position P is preferably provided closer to the distal end side of the vibrating arm than the distal end portion of the long groove, so that the CI value ratio can be almost certainly increased and oscillation due to harmonics can be prevented.

Further, FIG. 7 shows an arm width reduction ratio M of the vibrating arm 36 when the ratio N of the groove length, which is the length PL of the long groove 34 / the length of the vibrating arm 36 in FIG. Is a graph in which the value of maximum width (W2) / minimum width (W1) of the vibrating arm is taken on the horizontal axis and the CI value ratio is taken on the vertical axis.
As shown in the figure, the larger the arm width reduction ratio M, the greater the CI value ratio, which is preferable. In this embodiment, by making the arm width reduction ratio M of the vibrating arm 36 larger than 1.06, the CI value ratio can be made larger than 1, and oscillation due to harmonics can be prevented.
Thus, in the piezoelectric vibrating piece 32, the value of the maximum width / minimum width = M as the width reduction ratio of the arm width of the vibrating arm is related to the ratio of the length of the long groove to the arm length of the vibrating arm = N. By determining the size, the piezoelectric vibration piece 32 and the piezoelectric device 30 on which the piezoelectric vibration piece 32 is mounted can be reduced in size, the CI value can be reduced, and it is difficult to oscillate with higher harmonics, thereby realizing good vibration characteristics.

FIG. 8 illustrates the relationship between the width dimension of the first reduced width portion TL shown on the right side of FIG. 3 and the CI value.
In this case, the height dimension TH of the first reduced width portion is about 50 μm, the width TW is taken on the horizontal axis, and the change in the CI value shown on the vertical axis is recorded.
As shown in the figure, when the TW is small, the CI value is high, and when the TW is large, the distortion is small, the vibration component in the Z direction described with reference to FIG. 13 is reduced, and the vibration is stabilized. Get smaller. As shown in the figure, in this case, TW is 0, that is, the first reduced width portion is not formed at all, and the first reduced width portion is provided to form TW of about 10 μm, particularly around 11 μm. In this case, a significant decrease in CI value is observed. Further, the CI value gradually decreases while the dimension of the TW is increased to increase the base 51 to the full width.

As described above, according to the present embodiment, the rigidity of the root portions of the vibrating arms 35 and 36 of the piezoelectric vibrating piece 32, that is, the vicinity of the root is enhanced by the first reduced width portion. Thereby, the flexural vibration of the vibrating arm can be further stabilized and the CI value can be suppressed.
In addition, by providing the second reduced width portion, the vibration arm 36 gradually decreases in rigidity from the vicinity of the base toward the constriction position P toward the distal end side, and further from the constriction position P to the distal end side. Since there is no long groove 34 and the arm width is gradually enlarged, the rigidity is increased toward the tip side.
For this reason, it is considered that the “node” of vibration at the time of vibration in the second harmonic can be positioned on the more distal end side of the vibrating arm 36, which makes the long groove 34 longer and the piezoelectric material Even if the electric field efficiency is increased and the CI value is increased, the CI value of the second harmonic can be prevented from being lowered while the CI value of the fundamental wave is suppressed. Thus, even if the size is reduced, the CI value of the fundamental wave can be kept low, and a piezoelectric vibrating piece that does not deteriorate the drive characteristics can be provided.

Next, a preferable detailed structure of the piezoelectric vibrating piece 32 of the present embodiment will be described with reference to FIGS. 3 and 4.
Since the vibrating arms 35 and 36 of the piezoelectric vibrating piece 32 shown in FIG. 3 have the same shape, the matter that describes either the vibrating arm 35 or the vibrating arm 36 is common to both vibrating arms.
The wafer thickness indicated by the dimension x in FIG. 4, that is, the thickness of the crystal wafer forming the piezoelectric vibrating piece is preferably 70 μm to 130 μm.
The total length of the piezoelectric vibrating piece 32 indicated by the dimension a in FIG. 3 is about 1300 μm to 1600 μm.
The dimension b which is the total length of the vibrating arm is 1100 to 1400 μm, and about 1250 μm is most preferable for the reason described above.
The total width d, which is the base width of the piezoelectric device 30, is preferably about 400 μm to 600 μm from the viewpoint of miniaturization of the piezoelectric device, and in this embodiment is about 500 μm. For this reason, in order to reduce the size of the tuning fork portion, the width dimension e on the tip side of the base 51 is about 200 to 400 μm.

Also, the dimension k between the vibrating arms 35 and 36 in FIG. 3 is preferably 50 to 100 μm. When the dimension k is less than 50 μm, when the outer shape of the piezoelectric vibrating piece 32 is formed by penetrating a quartz crystal wafer by wet etching, as will be described later, a deformed portion based on etching anisotropy, that is, a symbol in FIG. It is difficult to sufficiently reduce the fin-shaped convex portion in the plus X-axis direction on the side surface of the vibrating arm indicated by 81. If the dimension k is 100 μm or more, the flexural vibration of the vibrating arm may become unstable.
Furthermore, the dimensions m1 and m2 of the outer edge of the long groove 33 and the outer edge of the vibrating arm in the vibrating arm 35 (same as the vibrating arm 36) in FIG. 4 are preferably 3 to 15 μm. By setting the dimensions m1 and m2 to 15 μm or less, the electric field efficiency is improved, and by setting the dimensions m1 and m2 to 3 μm or more, it is advantageous for surely polarizing the electrodes.

  In the vibrating arm 36 of FIG. 3, the position of the arm width change point P where the degree of widening that the tip side is wider than the arm width change point P is the position where the arm width of the vibrating arm 36 is minimized. It is preferable to increase the width by about 0 to 20 μm. If the width is increased beyond this, the tip of the vibrating arm 36 becomes too heavy, and the stability of bending vibration may be impaired.

  Also, a deformed portion 81 that protrudes in a fin shape in the plus X-axis direction is formed on one side surface outside the vibrating arm 35 (same for the vibrating arm 36) in FIG. This is formed as an etching residue due to crystal etching anisotropy when wet-etching the piezoelectric vibrating piece, preferably in an etching solution with hydrofluoric acid and ammonium fluoride, It is preferable to obtain a stable bending vibration of the vibrating arm 35 by reducing the protrusion amount v of the deformed portion 81 within 5 μm by etching for 9 hours to 11 hours.

  The width dimension of the long groove indicated by dimension g in FIG. 3 is preferably about 60 to 90 percent of the arm width c of the vibrating arm in the region where the long groove of the vibrating arm is formed. Since the first and second reduced width portions are formed in the vibrating arms 35 and 36, the arm width c varies depending on the position in the length direction of the vibrating arm, but the long groove is larger than the maximum width of the vibrating arm. The width g is about 60 to 90 percent. If the width of the long groove is smaller than this, the electric field efficiency is lowered and the CI value is increased.

  Further, the total length h of the base 51 in FIG. 3 is conventionally about 30% with respect to the total length a of the piezoelectric vibrating piece 32, but this embodiment is about 15 to 25% due to the use of a cut portion or the like. It is possible to reduce the size.

Further, in view of the fact that when the vibrating arms 35 and 36 of the piezoelectric vibrating piece 32 flexurally vibrate, the range in which the vibration leakage is transmitted has a correlation with the arm width dimension c of the vibrating arm. It was found that the cut portion of the piezoelectric vibrating piece was not provided at an appropriate position. Therefore, the position where the cut portion 71 in FIG. 3 is provided is a location having a dimension i exceeding the arm width dimension c of the vibrating arm from the base of the vibrating arm. Thereby, the notches 71 and 71 can have a structure that can more reliably suppress propagation of vibration leakage from the vibrating arms 35 and 36 to the base side. As a result, it is possible to appropriately prevent leakage of vibration from the vibrating arm side to the base side and to provide a piezoelectric vibrating piece with good drive level characteristics.
In particular, the cut portions 71 and 71 are formed away from the base T of the vibrating arms 35 and 36 by a dimension i of arm width dimension c × 1.2 or more, so that the drive level characteristic is normal piezoelectric vibrating piece 32. It has been confirmed that it can be adapted to different levels.
In addition, the position of the end portion on the base 51 side of the long grooves 33 and 34 is the same as the root of the vibrating arms 35 and 36, that is, the position of T in FIG. It is preferable to be within the range where the reduced width portion TL exists, and it is particularly preferable not to enter the base end side of the base portion 51 from the T position.

FIG. 9 is a circuit diagram illustrating an example of an oscillation circuit when a piezoelectric oscillator is configured using the piezoelectric vibrating piece 32 of the present embodiment.
The oscillation circuit 91 includes an amplification circuit 92 and a feedback circuit 93.
The amplifier circuit 92 includes an amplifier 95 and a feedback resistor 94. The feedback circuit 93 includes a drain resistor 96, capacitors 97 and 98, and the piezoelectric vibrating piece 32.
Here, the feedback resistor 94 in FIG. 9 can be about 10 MΩ (mega ohm), for example, and the amplifier 95 can be a CMOS inverter. The drain resistor 96 can be, for example, 200 to 900 kΩ (kiloohms), and the capacitor 97 (drain capacitance) and the capacitor 98 (gate capacitance) can be 10 to 22 pF (picofarad), respectively.

(Piezoelectric device manufacturing method)
Next, an example of a method for manufacturing the above-described piezoelectric device will be described with reference to the flowchart of FIG.
The piezoelectric vibrating piece 32, the package 57, and the lid body 40 of the piezoelectric device 30 are manufactured separately.
(Method for manufacturing lid and package)
The lid 40 is prepared, for example, as a lid having a size suitable for sealing the package 57 by cutting a glass plate (for example, borosilicate glass) having a predetermined size.
As described above, the package 57 is formed by laminating a plurality of substrates formed by molding an aluminum oxide ceramic green sheet and then sintering. At the time of molding, each of the plurality of substrates forms a predetermined hole on the inner side thereof, so that a predetermined internal space S is formed on the inner side when stacked.

(Method for manufacturing piezoelectric vibrating piece)
First, a piezoelectric substrate is prepared, and the outer shape of a predetermined number of piezoelectric vibrating pieces is simultaneously formed by etching from one piezoelectric substrate (outer shape etching).
Here, as the piezoelectric substrate, for example, a quartz wafer having a size capable of separating a plurality or a large number of the piezoelectric vibrating reeds 32 among the piezoelectric materials is used. Since this piezoelectric substrate forms the piezoelectric vibrating piece 32 of FIG. 3 as the process proceeds, a piezoelectric material, for example, such that the X axis shown in FIG. 3 is the electric axis, the Y axis is the mechanical axis, and the Z axis is the optical axis. It will be cut from a single crystal of quartz. In addition, when cutting from a single crystal of quartz, in the orthogonal coordinate system composed of the X-axis, Y-axis, and Z-axis described above, it rotates in the range of 0 to 5 degrees (θ in FIG. 11) clockwise around the Z-axis. Then, the crystal Z plate cut out is cut and polished to a predetermined thickness.

In the outer shape etching, the outer shape of the piezoelectric vibrating piece is etched using, for example, a hydrofluoric acid solution with respect to the piezoelectric substrate exposed as a portion outside the outer shape of the piezoelectric vibrating piece using a mask such as a corrosion-resistant film (not shown). . As the corrosion resistant film, for example, a metal film in which gold is vapor-deposited with chromium as a base can be used. This etching process is wet etching and changes depending on the concentration, type, temperature, and the like of the hydrofluoric acid solution.
Here, in the wet etching in the outer shape etching process, the following etching anisotropy is exhibited with respect to the mechanical axis X, the electric axis Y, and the optical axis Z shown in FIG.
That is, with respect to the piezoelectric vibrating piece 32, the etching rate in the XY plane is in the plus X direction, and the etching progresses in the plane of 120 degrees with respect to the X axis and in the minus 120 degrees direction. The progress of etching on the inner surface in the direction of plus 30 degrees with respect to the X axis in the minus X direction and in the direction of minus 30 degrees is slow.
Similarly, the progress of etching in the Y direction is faster in the plus 30 degree direction and the minus 30 degree direction, and in the plus Y direction, the plus 120 degree direction and the minus 120 degree direction are delayed with respect to the Y axis.

Due to such anisotropy in etching progress, the piezoelectric vibrating piece 32 is formed with a deformed portion protruding in a fin shape on the outer side surface of each vibrating arm, as indicated by reference numeral 81 in FIG. .
However, in this embodiment, etching is performed using hydrofluoric acid and ammonium fluoride as an etchant for a sufficient time, that is, a sufficient time of 9 to 11 hours, so that in FIG. The described deformed portion 81 can be made extremely small (ST11).
In this process, the outer shape including the cut portions 71 and 71 of the piezoelectric vibrating piece 32 is formed, and at the end, the outer shape of a large number of piezoelectric vibrating pieces 32 connected to the quartz wafer near the base 51 by thin connecting portions. A finished product is obtained.

(Half etching process for groove formation)
Next, a groove forming resist (not shown) is used to form the shape shown in FIG. 4. Under the same etching conditions, the front and back surfaces of the vibrating arms 35 and 36 are respectively wet-etched to form bottom portions corresponding to the long grooves (ST12).
Here, referring to FIG. 4, the groove depth indicated by the symbol t is about 30 to 45 percent with respect to the total thickness x. If t is 30% or less of the total thickness x, the electric field efficiency may not be sufficiently improved. If it is 45% or more, the rigidity may be insufficient to adversely affect the bending vibration or the strength may be insufficient.

Note that one or both of the outer shape etching and the groove etching may be simultaneously performed by dry etching. In that case, for example, on the piezoelectric substrate (crystal wafer), the outer shape of the piezoelectric vibrating piece 32 and the region corresponding to the long groove after the outer shape is formed are covered with a metal mask each time. In this state, for example, it can be housed in a chamber (not shown), and an etching gas can be supplied at a predetermined degree of vacuum to generate etching plasma for dry etching. That is, for example, a freon gas cylinder and an oxygen gas cylinder are connected to a vacuum chamber (not shown), and further, an exhaust pipe is provided in the vacuum chamber so that it is evacuated to a predetermined degree of vacuum. Yes.
When a DC voltage is applied in a state where the inside of the vacuum chamber is evacuated to a predetermined degree of vacuum, a freon gas and an oxygen gas are sent, and the mixed gas is filled up to a predetermined atmospheric pressure, plasma is generated. appear. The mixed gas containing ionized particles hits the piezoelectric material exposed from the metal mask. Due to this impact, it is physically scraped off and scattered, and etching proceeds.

(Electrode formation process)
Next, a metal serving as an electrode, for example, gold is coated on the entire surface by vapor deposition or sputtering, and then a resist in which a portion where an electrode is not formed is exposed is exposed by a photolithography technique in FIGS. 1 and 4. The described driving electrode is formed (ST13).
Thereafter, weighting electrodes (metal coatings) 21 and 21 are formed on the tip portions of the vibrating arms 35 and 36 by sputtering or vapor deposition (see FIG. 3) (ST14). The weighting electrodes 21 and 21 are not energized and used for driving the piezoelectric vibrating piece 32 but are used for frequency adjustment described later.

Next, rough adjustment of the frequency is performed on the wafer (ST15). Coarse adjustment is frequency adjustment by a mass reduction method by partially evaporating part of the weighted electrodes 21 and 21 by irradiating an energy beam such as laser light.
Subsequently, the thin connecting portion with respect to the wafer is broken, and the piezoelectric vibrating reed 32 is individually formed (ST16).
Next, as described with reference to FIG. 1, conductive adhesives 43 and 43 are applied to the electrode portions 31 and 31 of the package 57, and portions of the extraction electrodes 37 a and 38 a of the base portion 51 of the piezoelectric vibrating piece 32 are formed thereon. The piezoelectric vibrating piece 32 is bonded to the package 57 by heating and curing the adhesive (ST17).
As the conductive adhesive 43, for example, a binder component using a synthetic resin or the like is mixed with conductive particles such as silver particles, which can perform mechanical joining and electrical connection at the same time. It is.

Subsequently, when the lid 40 is formed of an opaque material such as metal, the through hole 27 described in FIG. 2 is not provided. For this reason, for example, the laser beam is applied to the vibrating arm 35 and / or the vibrating arm of the piezoelectric vibrating piece 32 while applying a driving voltage to the piezoelectric vibrating piece 32 and observing the frequency before joining the lid body 40. Irradiate the tip side of the 36 weighted electrodes 21 and perform frequency adjustment as fine adjustment by the mass reduction method (ST18-1).
Next, the lid 40 is joined to the package 57 by seam welding or the like (ST19-1), and the piezoelectric device 30 is completed through necessary inspections.

Alternatively, when the package 57 is sealed with the transparent lid 40, the lid 40 is joined to the package 57 after the piezoelectric vibrating piece 32 is joined in ST17 (ST18-2).
In this case, for example, a heating step is performed in which the low melting point glass or the like is heated to join the lid 40 to the package 57. At this time, gas is generated from the low melting point glass or the conductive adhesive. Therefore, by heating, such a gas is discharged from the through hole 27 described with reference to FIG. 2 (degassing), and thereafter, metal spheres or pellets made of gold tin, more preferably gold germanium, etc. are arranged on the stepped portion 29. Then, it is melted by irradiating it with a laser beam or the like. Thereby, the metal filler 28 in FIG. 2 hermetically seals the through hole 27 (ST19-2).
Next, as shown in FIG. 2, the laser beam is externally applied to the vibrating arm 35 of the piezoelectric vibrating piece 32 and / or the weighting electrode 21 of the vibrating arm 36 so as to transmit the transparent lid 40 made of borosilicate glass or the like. The tip side is irradiated and frequency adjustment as fine adjustment is performed by the mass reduction method (ST20-2). Next, the piezoelectric device 30 is completed through necessary inspections.

The present invention is not limited to the above-described embodiment. Each configuration of the embodiment can be appropriately combined or omitted, and can be combined with other configurations not shown.
The present invention is not limited to the case where the piezoelectric vibrating piece is accommodated in the box-shaped package, the case where the piezoelectric vibrating piece is accommodated in the cylindrical container, the piezoelectric vibrating piece functioning as a gyro sensor, Can be applied to any piezoelectric device using a piezoelectric vibrating piece regardless of the name of a piezoelectric vibrator, a piezoelectric oscillator, or the like.

The schematic plan view which shows embodiment of the piezoelectric device of this invention. BB schematic sectional drawing of FIG. FIG. 2 is a schematic plan view of a piezoelectric vibrating piece used in the piezoelectric device of FIG. 1. The CC sectional view taken on the line of FIG. The graph which shows the relationship between the constriction position of the vibrating arm of the piezoelectric vibrating piece of FIG. 3, and CI value. The graph which shows the relationship between the constriction position of the vibrating arm of the piezoelectric vibrating piece of FIG. 3, and CI value ratio. The graph which shows the relationship between the width reduction ratio of the arm width of the vibration arm of the piezoelectric vibrating piece of FIG. 3, and CI value ratio. 4 is a graph showing the relationship between the width dimension of the first reduced width portion and the CI value of the piezoelectric vibrating piece in FIG. 3. FIG. 2 is a circuit diagram illustrating an example of an oscillation circuit using the piezoelectric vibrating piece of FIG. 1. The flowchart which shows an example of the manufacturing method of the piezoelectric device of FIG. The figure which shows the coordinate axis of a crystal Z board. FIG. 6 is a schematic plan view of a conventional piezoelectric vibrating piece. FIG. 13 is an end view taken along line AA in FIG. 12. The graph which shows the drive level characteristic of the piezoelectric vibrating piece of FIG. The graph which shows the dispersion | variation in CI value ratio in the piezoelectric vibrating piece of FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 30 ... Piezoelectric device, 32 ... Piezoelectric vibrating piece, 33, 34 ... Long groove, 35, 36 ... Vibrating arm, TL ... First reduced width part, CL ... Second Reduced width

Claims (5)

A base formed of piezoelectric material;
A plurality of vibrating arms formed integrally with the base and extending from one end of the base;
A long groove formed along the longitudinal direction of each vibrating arm;
An electrode for driving formed in the long groove,
Each of the vibrating arms includes a reduced width portion that is reduced in width toward a tip side from a base portion of the vibrating arm with respect to the base portion,
At the tip of each reduced width portion, there is a change point P of the width change in which the width dimension of the vibrating arm turns constant or increased, and the change point P is further on the tip side of the vibrating arm than the tip portion of the long groove. Position to,
Each of the reduced width portions includes a first reduced width portion, and a second reduced width portion that is further reduced in width from the end of the first reduced width portion toward the arm tip side. The reduced width portion is a piezoelectric vibrating piece that is reduced more rapidly than the second reduced width portion , and
An amplifier using a CMOS inverter in which a first terminal of the piezoelectric vibrating piece is connected to an input and a second terminal of the piezoelectric vibrating piece is connected to an output;
A piezoelectric oscillator comprising: The base portion has a cut portion formed by reducing the width of the piezoelectric material in the width direction, and the cut portion is 1.2 times or more the dimension of the arm width from the root of each vibrating arm. The piezoelectric oscillator according to claim 1 , wherein the piezoelectric oscillator is formed at the base portion at a distance. 3. The piezoelectric oscillator according to claim 1, wherein a deformed portion protruding in a plus X-axis (mechanical axis) direction is formed on a side surface of each vibrating arm within 5 μm. . The value of the maximum width / minimum width = M as the width reduction ratio of the vibrating arm is determined in relation to the ratio of the length of the long groove to the arm length of the vibrating arm = N. in case of the 5%, a piezoelectric oscillator according to any one of claims 1 to 3, characterized in that said M and 1.06 or more. The piezoelectric oscillator according to any one of claims 1 to 4 wherein the first width of the reduced width portion is equal to or not less than 11 [mu] m.

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