JP2008046324A - Micro manipulation device for microscopic minute work - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manipulation device capable of removing an insulation film efficiently, transferring a probe to a measurement spot and positioning it efficiently, and performing minute work excellent in operability and certainty when directly measuring the electric property of a deep layer of a multi-layered micro wiring such as a semiconductor integrated circuit, and analyzing a defective spot while observing a sample and a needle point of the micro probe under the visual field of a microscopic observation image. <P>SOLUTION: The micro manipulation device for microscopic minute work comprises a local plasma mechanism and a structure in which a plasma capillary tube positioning stage that holds a plasma capillary tube which is an edge part of the local plasma mechanism, a sample stage, and one or more probes are placed on a prober base, and the prober base is removably mounted under the microscopic visual field. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention captures an extremely fine specimen sample such as a semiconductor device in the field of view of a microscope and performs fine operations such as performance inspection and electrical measurement of the specimen specimen while observing the image of the semiconductor device. More specifically, it is related to a device for analyzing defects, and more specifically, in the measurement of electrical characteristics directly to the deep layer of a multilayer fine wiring such as a semiconductor integrated circuit, the fineness such as peeling of an insulating film by plasma etching is performed. Provided is a micromanipulation apparatus that performs work.

  Conventionally, a so-called fine work of not only observing a microscopic specimen sample such as a semiconductor device with a microscope but also performing extremely fine processing under the microscope has been conventionally performed. However, semiconductor devices have been increasingly diversified in recent years and are beginning to be used in fields that have not been used so far, and this trend is expected to continue to expand in the future. At the same time, as the device itself can be seen in ULSI (Ultra-Large Scale Integration), the number of highly integrated devices is increasing, and the manufacturing process is required to be more complicated and highly accurate. In particular, in response to the demands and importance of the above-mentioned integration and multi-layering of semiconductor devices described above, the micromachine is applied and the specimen is captured in the microscope field. Therefore, the importance of techniques for performing electrical measurement, failure analysis, etc. using a manipulator is increasing.

  Especially at the development stage, in order to shorten the development period, it is important to incorporate a so-called defect analysis technique, to quickly elucidate defects in the design stage and process problems, and to feed back to the manufacturing process. Become. As an analysis method for this defect analysis, for example, there is a method of comparing a CAD drawing of a design with an actually manufactured pattern by using an image processing technique and specifying a difference portion. In this case, this method is not sufficient. Actually, a target portion is cut out from a semiconductor substrate, and a probe (a fine conductive needle) is contacted and operated on a fine wiring on a cross-sectional inspection surface to actually measure electrical characteristics. Specifically, a method is employed in which each operation is performed by an operator manually moving a manipulator under the field of view of an optical microscope and operating an electrically insulated probe at a specific location.

  For example, Patent Document 1 discloses an apparatus for operating a microprobe attached to a manipulator to perform accurate movement and processing of a specimen under the microscope's field of view. Furthermore, an electrical function attached to the manipulator is disclosed. For example, in Patent Document 2, the movement of the microprobe and the microprobe under the microscope is linked in a three-dimensional direction with respect to an apparatus for measuring the electrical property value of the specimen sample by operating the microprobe having An apparatus is disclosed that facilitates positioning, movement, and processing.

  Furthermore, in the next generation device, the interval between the wirings is assumed to be 65 nm, which cannot be handled by the currently generalized drive mechanism and microprobe, and has to have higher resolution. Even if such a drive mechanism is realized for failure analysis, when measuring directly to a circuit pattern of several tens of nm class, the circuit pattern is destroyed unless the contact pressure is controlled by the nN class. There's a problem. In order to address this problem, we have already proposed a device that can attach a nano-scale sub-probe such as a carbon nanotube to the tip of the main probe to enable high-precision measurement and replace the sub-probe at any time ( (See Patent Document 3). As a microscope used in these apparatuses, a scanning electron microscope (hereinafter abbreviated as SEM) and the like are preferably used in addition to an optical microscope.

  The micro work in these devices is carried out by the movement of the sample stage on which the specimen is placed and the work is performed, and the manipulator to which the probe is attached. The drive is mounted on the sample stage and the manipulator, respectively. This is performed by adding a displacement detection function for feedback to the piezoelectric element or piezoelectric element. According to this, a minute movement of several tens of nm level is possible, and although it depends on the displacement detecting means, a resolution of 1 nm or less can be realized relatively easily. Each manipulator, that is, each probe, can perform minute linear movements in the X-axis, Y-axis, and Z-axis directions, as well as rotation, so that fine work at three-dimensional levels, that is, manipulation, is possible. It is possible to do it reliably.

  In recent years, high integration of ICs or LSIs is not limited to miniaturization and high integration of electric circuits in one plane, but it is mainstream to achieve high integration by stacking and multilayering the circuits themselves. It is becoming a technology, and the target of fine work such as performance inspection, electrical measurement etc. is not only the fine wiring circuit on the surface layer in one plane, but also the second layer, the third layer and further separated by an insulating film The present situation is that the micro wiring circuit of the multilayer deep layer part in the deep part is being expanded to the target.

  As described above, in an integrated circuit that is multilayered in the vertical direction, each layer is isolated by an insulating film such as silicon oxide. Even if the fine wiring circuit in the surface layer portion can be analyzed in the above-described device, The part cannot be analyzed. That is, even if the microprobe is capable of micro linear movement in the X-axis, Y-axis, and Z-axis directions, the tip of this microprobe is forcibly moved to a predetermined position in the deep layer by mechanical movement of the manipulator. However, in the process, peripheral devices and fine wiring circuit portions are destroyed or damaged, which not only makes sense of failure analysis and measurement but also leads to a problem of damage to the probe itself. Currently, in order to perform defect analysis of the fine wiring circuit in the deep layer portion, a sample at a target portion is cut out from a semiconductor substrate, and a scanning electron microscope (SEM), a focused ion beam device (FIB), and a transmission electron microscope are examined on a cross-sectional inspection surface. Although it is possible to make full use of (TEM) or the like, the work requires a great deal of labor and time.

  Therefore, when performing performance inspection, electrical measurement, or repairing work on the fine wiring circuit in the deep layer, the insulating film made of a thin film such as silicon oxide is effectively peeled off at the minimum necessary minute portion and the surrounding fine It is important that the wiring circuit is not damaged during the peeling operation and has no adverse effect. However, when a micromachine is applied, and the specimen is captured in the microscope field of view and is peeled off by mechanical means using the probe at the tip of the manipulator, not only the necessary part of the insulating film as described above but also the peripheral part or The circuit portion is damaged, which is not preferable. That is, peeling work by mechanical means on the fine part has many problems, and its improvement is strongly demanded. Only after the stripping work is concentrated and concentrated only on the very fine local area to be measured, the electrical resistance, electrical conductivity, current value or current waveform measurement, voltage application, insulation confirmation, etc. of a predetermined part are performed. The direct characteristic can be measured and data for failure analysis can be obtained.

  As one of semiconductor technologies, there is a method in which an analysis cross section of a semiconductor device is cut out, the cross section is subjected to plasma etching, and observed with an SEM to perform defect analysis (for example, Patent Document 4). Furthermore, there is a technique of etching a circuit pattern by irradiating plasma as one of semiconductor manufacturing techniques. This device, called an etcher, etches an oxide film and silicon substrate using a resist film as a mask pattern, and in combination with a film formation process, circuit patterns and transistors are formed in multiple layers on the silicon substrate. It is used to go. That is, a plasma etching method. Furthermore, this plasma etching technique is also applied to a CMP technique in which a silicon layer having a uniform film thickness is obtained by locally controlling the plasma etching technique according to the film thickness of the silicon layer, for example (Patent Document 5).

  Plasma etching here refers to the removal action by reactive gas converted into plasma, for example, by irradiating the surface of the material with reactive gas such as fluorine converted into plasma and evaporating the generated volatile compound. The surface of the irradiated material can be removed with high accuracy. The effect of the action varies depending on the type of reactive gas used, and the strength and weakness can be controlled by adjusting the time and applied voltage, so that it can also be used as a method for flattening.

The above technology applies the strong removal ability of reactive gas produced in plasma, but this technology requires the supply of special raw material gas, and there are incidental equipment such as reaction tubes and electrodes. However, since it is also necessary to suck in the reaction gas and evaporating gas, it has not been carried out by mounting the apparatus itself on a microscope. In other words, it can be mounted on a microscope such as a general-purpose SEM, efficiently removes the insulating film, directly measures the electrical characteristics to the multilayer fine wiring deep layer such as a semiconductor integrated circuit, and quickly analyzes the defective portion. It is far from the goal of non-destructive.
JP 2000-221409 A JP 2002-365334 A Japanese Patent Application No. 2005-038093 JP-A-9-205122 JP-A-9-246250

  In view of the above-mentioned problems, the present inventors have observed the electrical characteristics directly to a multilayer fine wiring deep layer such as a semiconductor integrated circuit while observing the specimen and the probe tip of the microprobe under the microscope observation image field of view. When performing measurement and analyzing defective parts, the insulating film is efficiently removed, the probe is moved and positioned efficiently at the measurement target part, and at the same time, fine work with excellent operability and reliability is performed. This is the result of earnest research on a manipulating device that can be used. In other words, the inventors of the present invention provide a probe having a plasma etching function and one or more of them that can be independently driven in the X-axis, Y-axis, and Z-axis directions and rotated in the T-axis and / or R-axis. It has been found that the defect analysis of the deep layer portion can be easily performed by using the micromanipulation apparatus provided with the above prober. That is, an object of the present invention is to provide a micromanipulation apparatus that can directly measure electrical characteristics to a multilayer fine wiring deep layer portion such as a semiconductor integrated circuit and analyze a defective portion. In the present invention, the prober refers to a stage of a driving system on which a probe (fine conductive needle) is mounted.

  The above objective is to place a local plasma mechanism and a plasma capillary tube positioning stage, a sample stage and one or more probers that grip a plasma capillary tube at the tip of the local plasma mechanism on a prober base, The prober base can be achieved by a micromanipulation apparatus for microscopic work, characterized in that the prober base has a structure that can be detachably mounted in the field of view of the microscope. The microscope here refers to all known microscopes such as an optical microscope and an electron microscope, and is not particularly limited, but a scanning electron microscope (SEM) is particularly preferably used. That is, in the above-described micromanipulation device for microscopic work, the microscope to be used is a scanning electron microscope, and the prober base can be detachably mounted in the scanning electron microscope chamber through the sample introduction chamber of the scanning electron microscope. It is particularly preferable to have it.

  The local plasma mechanism includes a plasma generation unit (plasma electrode), a plasma capillary tube, and a local plasma mechanism exhaust system, and the above-described plasma capillary tube is held by a plasma capillary tube positioning stage. . The plasma capillary tube positioning stage can be driven independently in the X-axis, Y-axis, and Z-axis directions and rotated in the T-axis and / or R-axis together with the sample stage and one or more probers. More preferably. By driving the plasma capillary tube positioning stage in the X-axis, Y-axis, and Z-axis directions and allowing the T-axis and / or R-axis to rotate, the plasma capillary tube has its tube point directed in an arbitrary direction. Is possible. Further, by allowing the sample stage to rotate, that is, tilt, the T-axis and / or the R-axis, the sample surface can be placed on a surface orthogonal to the tip of the plasma capillary tube. Thereby, the problem of the etching accuracy due to the minute gap between the sample surface and the plasma capillary tube in local plasma irradiation can be solved. Further, the sample stage can be rotated around the θ axis (vertical axis).

  The plasma generator and the plasma capillary tube connected thereto are housed in a pipe having a three-axis operable bellows structure connected to a prober base, the tip of which protrudes into the microscope chamber, and the capillary tube and the bellows A vacuum seal member such as an O-ring is provided at the joint with the treated pipe tip. By providing a vacuum seal member at the joint, the inside of the microscope chamber is shielded from the outside air and can be kept in a vacuum state, so it can be used for microscopes that are observed in a vacuum environment such as SEM. In addition, it is possible to irradiate the vacuum side with the plasma generated by the plasma generation unit accompanying the generation of the electric field on the atmosphere side. Since the pipe has a bellows structure that can operate in three axes, it has flexibility, and the capillary tube tip is viewed by a microscope image within a range of degrees of freedom of the bellows and the vacuum seal member while driving the plasma capillary tube positioning stage. Further, it is possible to drive and position the measurement sample to the target position.

  Further, the probe constituting one or more probers capable of independently driving in the X-axis, Y-axis, and Z-axis directions and rotating the T-axis and / or R-axis according to the present invention includes the main probe and the probe. A dual probe composed of sub-probes to be joined is preferable. The subprobe here refers to a nanoscale microneedle made of, for example, a carbon nanotube (hereinafter abbreviated as CNT).

  In the present invention, the plasma capillary tube positioning stage, the sample stage, and one or more probers can independently rotate the T-axis and / or the R-axis, which means that the plasma capillary tube positioning stage, the sample stage, and the One or more probers have a structure that can be tilted vertically and horizontally freely around the θx axis, the θy axis, and / or the θz axis (vertical axis). Further, the rotation of the sample stage around the θ axis indicates that the sample stage can rotate the θz axis (vertical axis) 360 degrees.

  By using the micromanipulation apparatus for microscopic work with a local plasma mechanism according to the present invention, a failure analysis of a circuit in a deep layer portion of a multilayer microwiring of a semiconductor integrated circuit, which conventionally required a long time and enormous effort Can now be easily done.

  The micromanipulation apparatus for microscopic work according to the present invention will be described in detail below. The essential point of the present invention is that a conventional micromanipulation apparatus is provided with a local plasma mechanism, thereby enabling local plasma etching. That is, when performing a failure analysis of a circuit in a deep layer portion of a multilayer fine wiring of a semiconductor integrated circuit, an insulating film as a partition between each layer is efficiently peeled off, and a probe tip is inserted from a perforated portion. It is possible to directly measure the electrical characteristics and the like by applying needle contact to the circuit portion to be performed.

The local plasma mechanism referred to in the present invention has the following characteristics. That is, the plasma belongs to RF (radio frequency) plasma, and a raw material gas such as CF ₄ and CHF _{3 is} excited at a high frequency by an RF oscillator to generate a plasma and decomposed fluorine-based reactive gas plasma atmosphere. And the local plasma mechanism is that volatile molecules are formed by injecting the reaction gas from the tip of a very thin capillary tube and irradiating a minute portion of the SiO ₂ oxide film, that is, locally, and reacting with atoms in the solid. Let it evaporate off. At that time, argon gas or O ₂ gas is used as an assist gas to facilitate the reaction. The smallest portion to be removed by the reaction gas is estimated to have the largest diameter of about 20 μm and a depth of about 500 nm. For efficient processing, the hole diameter at the tip of the plasma capillary tube is 0.01 to 0.00 mm. It is preferable that the diameter is 1 mm and the flow rate of the reactive gas is 0.1 to several cc / min. As the form of the local plasma mechanism, an integrated type which can perform gas introduction, plasma generation and irradiation with an ultra-fine pencil type plasma gun is preferably used. By changing the performance of the ultra-fine pencil-type plasma gun, it is possible to function as a film-forming and cleaner in addition to etching.

  In the present invention, one or more probes (evaluation probes) that actually perform fine work such as performance inspection and electrical measurement exist in the form of a prober mounted on a stage of a drive system that performs three-dimensional movement. , Each move independently to drive in the X-axis, Y-axis, and Z-axis directions and to rotate the T-axis and / or R-axis. The specimen is placed on a sample stage that can be driven in the X-axis, Y-axis, and Z-axis directions and rotated in the T-axis and / or R-axis independently of the prober by an independent drive system. The Apart from this, there is a plasma capillary tube positioning stage, which is also capable of three-dimensional movement including driving in the X-axis, Y-axis and Z-axis directions and rotation of the θ-axis by an independent drive system.

  In the micromanipulation apparatus for microscopic work according to the present invention, the relative positioning work between the plasma capillary tube and the specimen, the peeling work by plasma etching, and the fine work by the prober are preferably performed in an environment using an SEM as a microscope. It is. That is, the above-described operation is performed using an operator's visual method or an SEM image processing method using a monitor television under SEM observation in a SEM vacuum environment. The aforementioned plasma capillary tube positioning stage and the plasma capillary tube, sample stage and one or more probers gripped by it are placed on a prober base, which prober base passes through the sample introduction chamber of the SEM and into the SEM chamber. It has a structure that can be detachably mounted. In other words, by replacing the existing SEM standard stage, the apparatus according to the present invention can be detachably used in the SEM chamber without modifying the SEM body.

Further, the above prober base is provided with a local plasma mechanism exhaust system piping. The inside of the SEM chamber can be maintained at the plasma generation pressure (about 10 ⁻⁴ to 50 Pa) by the exhaust device connected to this, and the reactive gas by the local plasma irradiation and the evaporation gas by the plasma etching can be removed. it can. That is, this local plasma mechanism exhaust system is provided completely independently of the SEM exhaust system. During plasma etching, the SEM barrel shutter and SEM exhaust system shutter supported by the SEM port are shut off and separated from the SEM main body function, and the local plasma mechanism exhaust system is operated to evacuate the inside of the SEM chamber. Furthermore, exhaust gas removal of reactive gas by local plasma irradiation and evaporation gas by plasma etching can be performed. That is, it is possible to prevent corrosion and contamination of the SEM lens barrel and the SEM exhaust system due to reactive gas and vapor generated during the plasma operation.

  As described above, the local plasma mechanism part may perform plasma processing in the SEM chamber, or in order to completely separate the SEM and the plasma environment, after confirming an arbitrary position of the target sample with the SEM image, Plasma processing may be performed in a sample introduction chamber separated from the SEM chamber by a controlled transfer system. That is, the apparatus according to the present invention is an apparatus in which a series of operations up to the pretreatment of a sample using plasma and the subsequent prober approach can be realized in the same SEM.

  The probe constituting the prober used in the present invention is preferably a dual probe comprising a main probe and a sub probe joined thereto. That is, it is a probe in which two types of electrodes are integrated. The two types of electrodes are composed of a microprobe (main probe) compatible with micro-order work / measurement and a nanoprobe (sub-probe) compatible with nano-order work / measurement. Each main and sub probe can perform fine work and electrical measurement. For example, a probe having a tip radius of about 2 μm is used as the main probe, and a sub-probe made of nano-scale CNT is joined to the tip. For example, in the case of a 65 nm wide wiring circuit in the deep layer, the tip of a sub-probe made of CNTs mounted on two probers is inserted into a hole in which a silicon oxide insulating film is perforated by plasma etching. A needle guard is applied to the point. Thereby, the intended electrical measurement can be performed without damaging the microcircuit. The material of the main probe is preferably a non-magnetic, highly conductive material such as tungsten, gold, platinum or phosphor bronze.

  The main probe and the sub-probe are joined while observing in a microscope field of view with the apparatus of the present invention. The mounting method can be performed using a method using plasma irradiation, a contamination bonding method using an electron beam, a tungsten deposition (CVD) bonding method, a nanoparticle bonding method, or the like, and is not particularly limited. . The bonding position is performed by aligning the end of the sub-probe such as CNT with the tip of the main probe whose tip is sharpened by a method such as electrolytic polishing. By providing an angle at the tip of the sub-probe, the sub-probe such as CNT can be reliably brought into contact with the sample surface.

  When nanoscale CNTs are used as the sub-probes to be attached to the above-described dual probes, the CNTs are relatively exhausted, or depending on the measurement work, they may be cut and discarded at the end of the work. For this reason, the sub-probe can be exchanged while confirming in the SEM observation field without breaking the vacuum in the SEM chamber at the time of fine work under vacuum. It is preferable that the replacement sub-probe is placed on the sample stage on which the specimen sample is placed. As a result, the dual probe and the replacement sub-probe move independently of each other, so that an efficient replacement operation is possible. In addition, continuous failure analysis work is also possible.

  Hereinafter, embodiments of the micromanipulation apparatus for microscopic work according to the present invention will be specifically described with reference to the drawings. However, the present invention is not limited thereto.

  FIG. 1 is a schematic explanatory view showing an example of a micromanipulation apparatus for microscopic work according to the present invention. There is a prober base 2 in the SEM chamber 1, a plurality of probers 3 and a sample stage 4 are placed on the prober base, and a pipe 5 having a bellows structure is attached to the prober base. Contains an extremely thin pencil-type plasma electron gun 6. The pencil type plasma electron gun 6 is composed of a plasma electrode 7 and a plasma capillary tube 8, and the tip of the plasma capillary tube 8 is held by a plasma capillary tube positioning stage 9 and connected to the pipe 5. An O-ring 10 is arranged in the part to keep secret in the SEM chamber. The plasma capillary tube positioning stage 9, the sample stage 4 and the prober 3 can be independently driven in the X-axis, Y-axis and Z-axis directions and rotated in the T-axis and / or R-axis. The coarse movement of each of these units used a DC motor as a drive source, and the fine movement used a piezoelectric element as a drive source (none is shown). Further, the prober base 2 is provided with a plasma mechanism exhaust system 11. The components placed on the prober base 2 constitute a local plasma mechanism as a whole.

  An SEM column 12 is arranged on the top of the SEM chamber 1, and the prober 3, the specimen sample (not shown) on the sample stage 4, and the capillary tube 8 can be accommodated in the SEM visual field. Further, an SEM exhaust system 13 is installed at the bottom of the SEM chamber 1 and performs an action of evacuating the inside of the SEM chamber 1. Further, an SEM barrel shutter 14 is provided so as to be in contact with the SEM barrel 12, and an SEM exhaust system shutter 15 is provided so as to be in contact with the SEM exhaust system 13. A sample introduction chamber 16 is provided on the side of the SEM chamber 1. The local plasma mechanism provided on the prober base 2 can be freely attached to and detached from the sample introduction chamber 16 to the SEM chamber 1.

  An RF power source 17 and a plasma generation mechanism 18 are connected to the pencil type plasma electron gun 6 described above, where plasma is generated and irradiated from the tip of the capillary tube 8. The sample stage 4 and the plasma capillary tube positioning stage 9 are operated so that an insulating film portion that needs to be peeled off from the specimen sample placed on the sample stage 4 comes to a position where the tip of the capillary tube 8 is opposed. In operation, both stages are driven while observing the SEM image captured by the SEM column 12.

  FIG. 2 is a drawing showing an example of the shape of the plasma capillary tube 8. The plasma capillary tube 8 includes a capillary tube body 8-1 portion and a capillary tube tip portion 8-2, and a plasma electrode (not shown) is disposed so as to surround the capillary tube body 8-1 portion. The hole diameter of the capillary tube tip portion 8-2 varies depending on the purpose, but is approximately 0.01 mm to 0.2 mm. The plasma generated in the capillary tube main body 8-1 is accelerated by the capillary tube tip portion 8-2 and applied to a minute portion (local) of the specimen.

  FIG. 3 is a view showing an example of a tip portion of a dual probe mounted on a fine work prober 3 used in the present invention. The dual probe 19 includes a main probe 19-1 and a sub probe 19-2 made of CNT. The dual probes mounted on two or more probers are driven, the tip of the main probe 19-1 or the sub probe 19-2 joined thereto is moved to the measurement position of the specimen, and positioning is performed to perform necessary measurements. Do. The specimen can move freely on a plane including rotation around the θ axis, can be displaced in the height direction, and can be tilted at an arbitrary angle. Since the dual probe 19 can change the inclination in addition to the free movement in the plane and in the height direction, the relative position with respect to the specimen sample and the angle in contact with the specimen can also be freely changed. That is, the tip of the main probe 19-1 or the sub probe 19-2 joined to the main probe can be brought into contact with an arbitrary position at an arbitrary angle.

  FIG. 4 is a perspective view of an SEM chamber in which the micromanipulation apparatus for microscopic work according to the present invention is mounted, and FIG. 5 is a perspective view of a prober base 2 detachably attached to the SEM chamber 1. A prober base 2 on which a plasma capillary tube positioning stage, a sample stage, and one or more probers are mounted can be attached to and detached from the SEM chamber 1 as an integrated object. FIG. 6 is a perspective view showing a state in which the prober base of the present invention is mounted in the SEM chamber.

  An example of the procedure of the peeling work and the defect analysis work using the operation type electron microscope micromanipulation apparatus according to the present invention is as follows.

1. A specimen sample to be measured is placed on the sample stage 4.
2. While observing the SEM image, the position to be peeled of the semiconductor device, which is the specimen, is positioned at the position where peeling is performed.
3. While observing the SEM image, the plasma capillary tube positioning stage 9 is operated so that the tube tip of the capillary tube 8 faces the part to be peeled of the specimen.
4). The SEM lens barrel shutter 14 and the SEM exhaust system shutter 15 are operated to shut down the SEM electron gun and the exhaust system.
5. The pencil type plasma electron gun 6 is operated, plasma is irradiated to the insulating film of the semiconductor device, and plasma etching is performed.
6). After the plasma etching is completed, the plasma mechanism exhaust system 11 is operated to forcibly exhaust / remove the plasma active gas and the vapor accompanying the plasma etching.
7). Open the SEM barrel shutter 14 and the SEM exhaust system shutter 15, and insert the tip of the sub probe 19-2 joined to the main probe 19-1 of the dual probe 19 into the hole peeled off by plasma etching while observing the SEM image. Then, contact with the measurement portion of the fine wiring deep layer portion to perform measurement evaluation.

  When the above operation is one cycle and the same operation is performed with another part of the same specimen as a target, the sample capillary and the capillary tube positioning stage are operated to place the plasma capillary on the next relevant part of the specimen. The next cycle is continued as it is, with the tube tip coming.

It is a schematic explanatory drawing which shows an example of the micromanipulation apparatus for microscopic work of this invention attached to SEM. It is drawing which shows an example of the shape of the plasma capillary tube of this invention. It is drawing which shows the front-end | tip part part in an example of the dual probe mounted in the prober for fine work used for this invention. It is a perspective view of the SEM chamber with which the prober base of this invention is mounted | worn. It is a perspective view of the prober base of this invention detachably attached to a SEM chamber. It is a perspective view which shows the state with which the prober base of this invention was mounted | worn with the SEM chamber.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 SEM chamber 2 Prober base 3 Prober 4 Sample stage 5 Piping which has a bellows structure 6 Pencil type plasma electron gun 7 Plasma electrode 8 Plasma capillary tube 8-1 Capillary tube main body 8-2 Capillary tube tip part 9 Plasma capillary tube positioning stage 10 O-ring 11 Plasma mechanism exhaust system 12 SEM barrel 13 SEM exhaust system 14 SEM barrel shutter 15 SEM exhaust system shutter 16 Sample introduction chamber 17 RF power source 18 Plasma generation mechanism 19 Dual probe 19-1 Main probe 19-2 Sub probe

Claims (5)

  A local plasma mechanism, a plasma capillary tube positioning stage that grips a plasma capillary tube that is a tip of the local plasma mechanism, a sample stage, and one or more probers are mounted on a prober base, and the prober base is a microscope A micromanipulation device for microscopic work, characterized in that it has a structure that can be detachably mounted under the field of view of the microscope.   2. The microscopic work according to claim 1, wherein the microscope is a scanning electron microscope, and the prober base has a structure that can be detachably mounted in the scanning electron microscope chamber through a sample introduction chamber of the scanning electron microscope. Micromanipulation device.   3. The micromanipulation apparatus for microscopic work according to claim 1, wherein the local plasma mechanism includes a plasma generation unit, a plasma capillary tube, and a local plasma mechanism exhaust system. .   The plasma capillary tube positioning stage, the sample stage, and one or more probers can be independently driven in the X-axis, Y-axis, and Z-axis directions and rotated in the T-axis and / or R-axis. The micromanipulation apparatus for microscopic work according to any one of claims 1 to 3. The plasma generation unit and the plasma capillary tube are housed in a pipe having a three-axis operable bellows structure connected to a prober base. The tip of the plasma capillary tube protrudes into the scanning electron microscope chamber, and the plasma capillary tube and the bellows A vacuum seal member is provided at the joint with the treated pipe tip, and by providing the seal member, the plasma generated at the plasma generation part accompanying the generation of an electric field on the atmosphere side is irradiated to the vacuum side. The micromanipulation apparatus for microscopic work according to any one of claims 1 to 4, wherein the micromanipulation apparatus for microscopic work is characterized by the above.

Images