JPS59143249A - Scanning type electron microscope - Google Patents
Scanning type electron microscopeInfo
- Publication number
- JPS59143249A JPS59143249A JP1749083A JP1749083A JPS59143249A JP S59143249 A JPS59143249 A JP S59143249A JP 1749083 A JP1749083 A JP 1749083A JP 1749083 A JP1749083 A JP 1749083A JP S59143249 A JPS59143249 A JP S59143249A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- reaction gas
- plasma
- sample chamber
- electron microscope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012495 reaction gas Substances 0.000 claims abstract description 52
- 239000007789 gas Substances 0.000 claims abstract description 35
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000001020 plasma etching Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 2
- 238000005507 spraying Methods 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical group O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 4
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 4
- 239000000203 mixture Chemical group 0.000 abstract description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 abstract 1
- 239000000523 sample Substances 0.000 description 76
- 239000000376 reactant Substances 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000012472 biological sample Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052572 stoneware Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、走査電子顕微鏡に係り、特に、試料に試料
室内でプラズマエツチングを行なうことが可能な走査電
子顕微鏡に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a scanning electron microscope, and more particularly to a scanning electron microscope capable of plasma etching a sample within a sample chamber.
近年、生体試料等を走査電子顕微鏡で観察することがよ
く行なわれる。これは、走査電子顕微鏡での観察は試料
表面の観察で−あシ、試料はバルクのままでよく、光学
顕微鏡の観察像との対応をつけやすいためでもある。ま
た像の集魚深度も深いため立体的な試料を観察するのに
適している。In recent years, it has become common to observe biological samples and the like using a scanning electron microscope. This is because observation with a scanning electron microscope is an observation of the surface of a sample, and the sample can be left as a bulk, making it easier to correlate the observed image with an optical microscope. Additionally, the image capture depth is deep, making it suitable for observing three-dimensional samples.
ここで生体の試料を作成して、その内部の観察を行なう
場合には、試料の観察したい部分を露出する必要がある
。そのため試料を剃刀等で切断する方法もあるがその切
断面を顕微鏡で観察すると、刃物によって試料につぶれ
が発生していたり、引っかき傷ができていたりして適当
ではない。When preparing a living body sample and observing its interior, it is necessary to expose the part of the sample to be observed. For this reason, there is a method of cutting the sample with a razor, etc., but when the cut surface is observed under a microscope, it is found that the sample has been crushed or scratched by the cutter, which is not appropriate.
そこでプラズマエツチング法で試料表面のエツチングを
行ない、試料内部を表面に出し、この表面の観察を行な
っている。この方法は、プラズマ化した反応ガスを、試
料の表面に衝突させ、試料表面の原子、分子をはじき飛
ばすことによって、試料の表面を徐々に削シ取って内部
を暴露していくものである。Therefore, the surface of the sample is etched using a plasma etching method, the interior of the sample is exposed to the surface, and this surface is observed. In this method, plasma-formed reactive gas is caused to collide with the surface of the sample, thereby repelling atoms and molecules on the surface of the sample, thereby gradually scraping away the surface of the sample and exposing the interior.
しかし、このプラズマエツチング装置は、一般には走査
電子顕微鏡とは、別体の装置であるから、試料を希望す
る程度までエツチングするためには、試料を少しづつエ
ツチングしては、そのエツチングの程度を走査電子顕微
鏡で観察し、エツチングが適度になされるまでエツチン
グと観察をくり返していた。この方法では、エツチング
の度に走査電子顕微鏡の試料台に試料を設置しなおすた
めその設置に誤差があり、同一視野の観察を行なうこと
は非常に困難であった。また、このような方法にあって
は、エツチングをしてから実際に試料観察を行なうまで
に時間がかかるため、その間に試料表面が変化してしま
ったシ、移動の際のショック等で表面の微細構造が破壊
されてしまい、試料の正確な状態の観察は困難であると
いう不具合があった。However, since this plasma etching device is generally a separate device from the scanning electron microscope, in order to etch the sample to the desired degree, the sample must be etched little by little, and the degree of etching must be adjusted. They observed it with a scanning electron microscope, and repeated etching and observation until the etching was adequate. In this method, the sample is repositioned on the sample stage of the scanning electron microscope each time it is etched, so there is an error in the placement, making it extremely difficult to observe the same field of view. In addition, with this method, it takes time to actually observe the sample after etching, so the surface of the sample may change during that time, or the surface may be damaged due to shock during movement. There was a problem in that the fine structure was destroyed, making it difficult to observe the exact state of the sample.
本発明は、以上のような従来の不具合に鑑みなされたも
のであって、その目的は、試料室内で試料のプラズマエ
ツチングが可能な走査電子顕微鏡を提供することである
。The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to provide a scanning electron microscope capable of plasma etching a sample within a sample chamber.
本発明は、上記目的を達成するために、走査電子顕微鏡
の試料室にプラズマ発生装置を取付ける一方、この試料
室に、上記プラズマ発生装置に連結されプラズマ発生装
置でプラズマ化した反応ガスを試料台上の試料に向けて
吹付ける反応ガス導入管と、排気ポンプに連結され上記
反応ガスを試料室外に排出する反応ガス排出管とを備え
たことを要旨とするものである。反応ガス導入管と排出
管とは、試料をはさんで、互いに対向して開口している
のが反応ガスの送給に最適である。そして、反応カスは
、反応ガス導入管から試料へ当ってから排出管へと吸引
され、試料室内に充満することは殆どない。In order to achieve the above object, the present invention has a plasma generator installed in a sample chamber of a scanning electron microscope, and a sample stage that is connected to the plasma generator and has a reactive gas turned into plasma by the plasma generator. The main feature is that the reactor gas inlet pipe is provided with a reactant gas inlet pipe that sprays the reactant gas toward the upper sample, and a reactant gas exhaust pipe that is connected to an exhaust pump and discharges the reactant gas to the outside of the sample chamber. Optimally for feeding the reaction gas, the reaction gas inlet pipe and the discharge pipe should open facing each other with the sample in between. Then, the reaction scum hits the sample from the reaction gas introduction tube and is sucked into the discharge tube, so that the sample chamber is hardly filled.
また、上記構成に加え、試料室にバリアグルオt、、1
.0皮ヤッ、−0,よ、。0よ、あ。In addition to the above configuration, the sample chamber also includes a barrier gluo t, 1
.. 0 skin yah, -0, yo. 0, oh.
ガスの粒子の飛散をさえぎり、対物レンズ等を保護する
ことが可能である。It is possible to block the scattering of gas particles and protect the objective lens, etc.
以下図面に基づいて本発明の詳細な説明する。The present invention will be described in detail below based on the drawings.
第1図は、本願の第1の発明の実施例を示している。こ
の実施例において走査電子顕微鏡の試料室Sには、プラ
ズマ発生装置1が取り付けられている。このプラズマ発
生装置は、高周波電源HとマツチングネットワークMと
プラズマ発生部Pとからなる。プラズマ発生部Pは石英
ガラスの筒体で形成され、この筒体の外周に電極対が設
けられ1おυ、この電極対e、eには、高周波電源Hと
マツチングネットワークMからの高周波電圧が引加され
る。プラズマ発生部Pには、反応ガスポンベBがパルプ
9を介して接続されている。このプラズマ発生部Pの反
応ガスボンベBと接続された側と反対側には、石瑛ガラ
ス等の耐鴎性に富んだ材料で出来た反応ガス導入管2が
接続されており、この反応ガス導入管2は、走査電子顕
微鏡の試料室S内に突設され1いる。試料室Sと反応ガ
ス導入管2との接続部は、0リング等でシールされ、試
料室Sの真空が破れないようにしている。反応ガス導入
管2の試料室S側の先端部は、試料室S内に設置された
試料台4上の試料5近傍で試料5に向は開口しており、
略円錐形状に先端が絞られてノズル構造をなし、試料5
に効率よく反応ガスが吹き付けられるようになっている
。反応ガス排出管3はこの反応ガス導入管2の開口に試
料5をはさんで対向し且つ開口して設置されている。こ
の反応ガス排出管3は、反応ガス導入管2と同様に石英
ガラスで形成されており、試料室S内の試料5の近傍か
ら試料室S外へと喫゛設され一〇いる。この場合も反応
ガス導入管と同様に試料室Sとの接続部はQ IJング
でシールされている。反応ガス排出管3の試料室S外の
端部には、排気ボンダEが接続されでいる。この排気ポ
ンプEには、高真空吸引を行い得る油回転ポンプ等が用
いられる。FIG. 1 shows an embodiment of the first invention of the present application. In this embodiment, a plasma generator 1 is attached to a sample chamber S of a scanning electron microscope. This plasma generation device consists of a high frequency power source H, a matching network M, and a plasma generation section P. The plasma generating part P is formed of a cylinder made of quartz glass, and a pair of electrodes is provided on the outer periphery of the cylinder.A high-frequency voltage from a high-frequency power supply H and a matching network M is applied to the electrode pairs e and e. is added. A reaction gas pump B is connected to the plasma generation section P via a pulp 9. A reaction gas introduction pipe 2 made of a material with high anti-glare properties such as stoneware glass is connected to the side opposite to the side connected to the reaction gas cylinder B of this plasma generation part P, and this reaction gas introduction tube 2 is connected to the side opposite to the side connected to the reaction gas cylinder B. The tube 2 is provided protrudingly into the sample chamber S of the scanning electron microscope. The connection between the sample chamber S and the reaction gas introduction tube 2 is sealed with an O-ring or the like to prevent the vacuum in the sample chamber S from being broken. The tip of the reaction gas introduction tube 2 on the sample chamber S side is open toward the sample 5 near the sample 5 on the sample stage 4 installed in the sample chamber S.
The tip is constricted into a substantially conical shape to form a nozzle structure, and sample 5
The reactant gas is efficiently blown onto the reactor. The reaction gas discharge pipe 3 is disposed opposite to the opening of the reaction gas introduction pipe 2 with the sample 5 interposed therebetween, and is open. This reactive gas exhaust pipe 3 is made of quartz glass like the reactive gas inlet pipe 2, and extends from the vicinity of the sample 5 in the sample chamber S to the outside of the sample chamber S. In this case as well, the connection to the sample chamber S is sealed with a QIJ ring, similar to the reaction gas introduction tube. An exhaust bonder E is connected to the end of the reaction gas exhaust pipe 3 outside the sample chamber S. As the exhaust pump E, an oil rotary pump or the like that can perform high vacuum suction is used.
反応ガスボンベB内の反応ガスは、酸素ガスや酸素ガス
と四7ツ化炭素ガスを混合したガス等であって、上記プ
ラズマ発生部Pの電極対間!tを通過する際に高周波電
圧を引加され、プラズマ状態となる。このプラズマ状態
となった反応ガスは、反応ガス導入管2を通り、その開
口から試料台4上の試料5に吹き付けられる。The reactant gas in the reactant gas cylinder B is oxygen gas or a mixture of oxygen gas and carbon tetra7tide gas, etc. between the electrode pair of the plasma generating part P! When passing through t, a high frequency voltage is applied to it and it enters a plasma state. This reactive gas in a plasma state passes through the reactive gas introduction tube 2 and is blown onto the sample 5 on the sample stage 4 from its opening.
試料5は、例えは生体の組紐等であるが、プラズマ化し
た反応ガスをその表面に吹き付けると、試料5の表面の
原子、分子ははじき飛ばされエツチングされる。そして
、時間がたつにつれて試料表面は徐々に削り取られて内
部を暴露して旨く。この反応ガス導入管2がもの反応ガ
スの吹出し中には、反応ガス排出管3に接続された排出
ポンプEを運転し、上記反応ガス導入管2から吹出され
た反応ガス及び、この反応ガスによってtよじき飛ばさ
れた原子、分子を反応ガス排出管3υ1]口部から取入
れ、且つ試料室外に排出するものである。The sample 5 is, for example, a biological braid, but when a reactive gas turned into plasma is blown onto the surface of the sample 5, atoms and molecules on the surface of the sample 5 are repelled and etched. Then, as time passes, the surface of the sample is gradually scraped away to expose the inside. While this reaction gas introduction pipe 2 is blowing out the reaction gas, the discharge pump E connected to the reaction gas discharge pipe 3 is operated, and the reaction gas blown out from the reaction gas introduction pipe 2 and this reaction gas are The atoms and molecules blown away are taken in from the mouth of the reaction gas discharge pipe 3υ1] and are discharged to the outside of the sample chamber.
第2図は、本願の第2の発明の実施例を示している。こ
の実施例において、走査電子顕微鏡の試料室Sには、プ
ラズマ発生装置1と反応ガス導入管2と、反応ガス排出
管3とバリアプルリークパルプ6とが設置されている。FIG. 2 shows an embodiment of the second invention of the present application. In this embodiment, a plasma generator 1, a reactive gas inlet pipe 2, a reactive gas exhaust pipe 3, and a barrier pull leak pulp 6 are installed in a sample chamber S of a scanning electron microscope.
プラズマ発生装置1と反応ガス導入管2と、反応ガス排
出管3の構成は、前述した第1の発明におけるそれぞれ
の部材と同様である。本発明においては、走査電子顕微
鏡の試料室Sの壁面にバリアプルリークパルプ6を設け
、試料室S内に外気又は不活性ガスを導入することがで
きるようにしている。The configurations of the plasma generator 1, the reactive gas inlet pipe 2, and the reactive gas exhaust pipe 3 are similar to the respective members in the first invention described above. In the present invention, a barrier pull leak pulp 6 is provided on the wall surface of the sample chamber S of the scanning electron microscope, so that outside air or an inert gas can be introduced into the sample chamber S.
外気又は不活性ガスの導入は、プラズマエツチングを行
なう際に行なわれる。この時の各部の気体の圧力を、反
応ガス導入管2内のガス圧力をP2、反応ガス排出管3
内のガス圧力をPS、試料室S内のガス圧力をPsとす
ると、PS>P2>PSの関係になるよう、バリアプル
リークパルプ6で外気又は不活性ガスを試料室S内に導
入する。このようにすれば、第3図に示すように、反応
ガス導入管2がら吹出される反応ガスは、反応ガス排出
管3に吹い込まれる際に、試料室内に導入された外気又
は不活性ガスに包み込まれる様に排出されるため反応ガ
スは試料室内に散乱することがなく、すべて反応ガス排
出管3に吸い込まれる。The introduction of outside air or an inert gas is carried out when performing plasma etching. At this time, the gas pressure in each part is P2, the gas pressure in the reaction gas introduction pipe 2 is P2, and the reaction gas discharge pipe 3 is P2.
When the gas pressure inside the sample chamber S is PS and the gas pressure inside the sample chamber S is Ps, outside air or an inert gas is introduced into the sample chamber S using the barrier pull leak pulp 6 so that the relationship PS>P2>PS is established. In this way, as shown in FIG. 3, the reaction gas blown out from the reaction gas introduction pipe 2 is replaced by the outside air or inert gas introduced into the sample chamber when it is blown into the reaction gas discharge pipe 3. Since the reaction gas is discharged in such a way that it is enveloped in the sample chamber, the reaction gas is not scattered in the sample chamber, and is all sucked into the reaction gas exhaust pipe 3.
第4図は、本願の第3の発明の実施例を示している。こ
の実施例において、走査電子顕微鏡の試料室には、プラ
ズマ発生装置1と、反応ガス導入管2と、反応ガス排出
管3と、試料台4と対物レンズ10との間に可動シヤツ
ク1が設けである。本発明においては、走査顕微鏡の試
料室Sの試料台4と対物レンズ1oとの間に、試料ては
、と6ツター1は、耐蝕性の材質で例えばステンレス製
あるいは、ステンレスをフッ操作によって試料5のエツ
チング時には、反応ガス導入管2から吹き出される反応
ガスから走査電子顕微鏡の対物レンズ10を遮蔽する位
置に移動され、エツチングの後、試料5の観察時には、
試料5に入射する電子線の経路に影響を与えない位置ま
で移動させることができる。FIG. 4 shows an embodiment of the third invention of the present application. In this embodiment, a movable shaft 1 is provided in the sample chamber of the scanning electron microscope between a plasma generator 1, a reactive gas inlet tube 2, a reactive gas exhaust tube 3, a sample stage 4, and an objective lens 10. It is. In the present invention, the sample table 4 and the objective lens 1o of the sample chamber S of the scanning microscope are made of a corrosion-resistant material such as stainless steel, or the sample table 1 is made of a corrosion-resistant material, for example, or made of stainless steel by a screw operation. During the etching step 5, the objective lens 10 of the scanning electron microscope is moved to a position that shields the objective lens 10 of the scanning electron microscope from the reaction gas blown out from the reaction gas introduction tube 2.
It can be moved to a position that does not affect the path of the electron beam incident on the sample 5.
これらの発明は、以上のような構成を有するから、走査
電子g微鋭の試料室内で試料のエツチングを行なう際試
料以外の部分を腐蝕することなく、プラズマエツチング
を行なうことができるため、試料のエツチングと観察を
くり返し同一試料台上で行なえ、同一視野のエツチング
の程度を確認しながら試料の観察を容易に行なうことが
できる他、試料の経時変化をおこさせたり試料台への再
設置の際のショック等で微細構造を破壊することがない
ため試料の正確な観察を行なうことができるという効果
を奏するものである。Since these inventions have the above-described configuration, plasma etching can be performed without corroding parts other than the sample when etching the sample in the sample chamber of the scanning electron g-micrometer. Etching and observation can be repeated on the same sample stage, making it easy to observe the sample while checking the degree of etching in the same field of view. This has the effect that the sample can be observed accurately because the fine structure is not destroyed by shock or the like.
第1図は第1の発明の実施例に係る走査電子顕微鏡を示
す断面図、第2図は第2の発明の実施例に係る走査電子
顕微鏡を示す断面図、第3図は第2図に示す走査電子顕
微鏡の試料台付近の気体の流れを示す説明図、第4図は
第3の発明の実施例に係る走査電子顕微鏡を示す説明図
である。
1・・・プラズマ発生装置 2・・・反応ガス導入管3
・・・反応ガス排出管 4・・・試料台特許出願人
株式会社 明石製作所
手続補正書
昭和r5昨3月29日
特許庁長官若杉和夫 殿
1、事件の表示
昭和58年 特 許願第17490号
2、発明の名称 走査電子顕微鏡
3、補正をする者
事件との関係 特許出願人
氏 名(名称)株式会社 明石製作所
4、代 理 人 〒105電話580−8931番6、
補正により増加する発明の数
7、補正の対象
明細書の「発明の詳細な説明」の欄
補正の内容
1)明細書筒9頁第加行の「吹い込まれる」の記載を「
吸い込まれる」と訂正する。FIG. 1 is a sectional view showing a scanning electron microscope according to an embodiment of the first invention, FIG. 2 is a sectional view showing a scanning electron microscope according to an embodiment of the second invention, and FIG. FIG. 4 is an explanatory diagram showing the flow of gas near the sample stage of the scanning electron microscope shown in FIG. 1... Plasma generator 2... Reaction gas introduction pipe 3
... Reaction gas discharge pipe 4 ... Sample stage patent applicant
Akashi Seisakusho Co., Ltd. Procedural Amendments Showa R5 Last March 29th Kazuo Wakasugi, Commissioner of the Patent Office 1, Indication of the case 1982 Patent Application No. 17490 2, Title of the invention Scanning electron microscope 3, Person making the amendment Related Patent Applicant Name: Akashi Seisakusho Co., Ltd. 4, Agent Address: 105 Telephone: 580-8931-6,
Number of inventions increased by the amendment 7. Contents of the amendment in the "Detailed Description of the Invention" column of the specification subject to the amendment 1) The description of "infused" in the additional line on page 9 of the specification cylinder was changed to "
It gets sucked in,” he corrected.
Claims (1)
付ける一方、この試料室に上記プラズマ発生装置に連結
されプラズマ発生装置でプラズマ化した反応ガスを試料
台上の試料に向けて吹き付ける反応ガス導入管と、排気
ポンプに連結され上記反応ガスを試料室外に排出する反
応ガス排出管と全備えることにより、試料室内で試料に
プラズマエツチング処理全行なえるようにしたことを特
徴とする走査電子顕微鏡。 2)走査電子顕微鏡の試料室にプラズマ発生装置を取り
付ける一方、この試料室に上記プラズマ装置に連結され
上記プラズマ発生装置でプラズマ化した反応ガスを試料
台上の試料に向けて吹き付ける反応ガス導入管と、排気
ポンプに連結され上記反応ガスを試料室外に排導入する
バリアグルリークパルプとを備えることにより、試料室
内で試料にプラズマエツチング処理を行えるようにした
ことを特徴とする走査電子顕微鏡。 3)走査電子顕微鏡の試料室にプラズマ発生装置を取り
付ける一方、この試料室に上記プラズマ発生装置に連結
され、プラズマ発生装置でプラズマ化した反応ガスを試
料台上の試料に向けて吹き付ける反応ガス導入管と、排
気ポンプに連結され上記反応ガスを試料室外に排出する
反応ガス排出管と、上記試料台と対物レンズとの間に設
置される可動シャッターとを備えることにより、試料室
内で試料にプラズマエツチング処理を行なえるようにし
たことを特徴とする走査電子顕微鏡。[Scope of Claims] 1) A plasma generator is attached to the sample chamber of a scanning electron microscope, and the sample chamber is connected to the plasma generator to direct a reaction gas turned into plasma by the plasma generator toward the sample on the sample stage. It is characterized by being completely equipped with a reaction gas inlet pipe for spraying the reaction gas and a reaction gas exhaust pipe connected to an exhaust pump and discharging the reaction gas to the outside of the sample chamber, so that the entire plasma etching process can be performed on the sample inside the sample chamber. scanning electron microscope. 2) A plasma generator is installed in the sample chamber of the scanning electron microscope, and a reactive gas inlet tube is connected to the plasma device in the sample chamber and blows the reactive gas turned into plasma by the plasma generator toward the sample on the sample stage. and a barrier leak pulp that is connected to an exhaust pump and discharges and introduces the reaction gas outside the sample chamber, thereby making it possible to perform plasma etching on a sample within the sample chamber. 3) A plasma generator is attached to the sample chamber of the scanning electron microscope, and a reactive gas is introduced into the sample chamber, which is connected to the plasma generator and sprays the reactive gas turned into plasma by the plasma generator toward the sample on the sample stage. A reaction gas exhaust pipe connected to an exhaust pump and discharging the reaction gas outside the sample chamber, and a movable shutter installed between the sample stage and the objective lens, are equipped with a movable shutter installed between the sample stage and the objective lens. A scanning electron microscope characterized by being able to perform etching processing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58017490A JPH0719556B2 (en) | 1983-02-07 | 1983-02-07 | Scanning electron microscope |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58017490A JPH0719556B2 (en) | 1983-02-07 | 1983-02-07 | Scanning electron microscope |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59143249A true JPS59143249A (en) | 1984-08-16 |
JPH0719556B2 JPH0719556B2 (en) | 1995-03-06 |
Family
ID=11945441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58017490A Expired - Lifetime JPH0719556B2 (en) | 1983-02-07 | 1983-02-07 | Scanning electron microscope |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0719556B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007234583A (en) * | 2006-01-31 | 2007-09-13 | Toshiba Corp | Charged particle beam apparatus and defect correcting method |
JP2008046324A (en) * | 2006-08-15 | 2008-02-28 | Sanyu Seisakusho:Kk | Micro manipulation device for microscopic minute work |
JP2010153278A (en) * | 2008-12-26 | 2010-07-08 | Hitachi High-Technologies Corp | Charged particle beam processing device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5356962A (en) * | 1976-11-02 | 1978-05-23 | Nippon Steel Corp | Capsule unit for electron microscope |
JPS5531733U (en) * | 1978-08-21 | 1980-02-29 |
-
1983
- 1983-02-07 JP JP58017490A patent/JPH0719556B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5356962A (en) * | 1976-11-02 | 1978-05-23 | Nippon Steel Corp | Capsule unit for electron microscope |
JPS5531733U (en) * | 1978-08-21 | 1980-02-29 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007234583A (en) * | 2006-01-31 | 2007-09-13 | Toshiba Corp | Charged particle beam apparatus and defect correcting method |
JP4543047B2 (en) * | 2006-01-31 | 2010-09-15 | 株式会社東芝 | Charged beam apparatus and defect correction method |
JP2008046324A (en) * | 2006-08-15 | 2008-02-28 | Sanyu Seisakusho:Kk | Micro manipulation device for microscopic minute work |
JP2010153278A (en) * | 2008-12-26 | 2010-07-08 | Hitachi High-Technologies Corp | Charged particle beam processing device |
Also Published As
Publication number | Publication date |
---|---|
JPH0719556B2 (en) | 1995-03-06 |
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