JP2008042012A - Optically coupled semiconductor device, method of manufacturing same, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optically coupled semiconductor device which has a high dielectric voltage and high optical transmission efficiency, a method of manufacturing the optically coupled semiconductor device, and electronic equipment mounted with the optically coupled semiconductor device. <P>SOLUTION: The optically coupled semiconductor device is manufactured by sealing a light emitting element 21, a light receiving element 31 receiving light emitted by the light emitting element 21, and lead frames 11 and 12 where the light emitting element 21 and light receiving element 31 are die-bonded in an inner package 41 with resin, and further by sealing the inner package 41 in an outer package 51 with resin. Optical path changing resin bodies 61, 62, 63, and 64 which guide the light emitted by the light emitting element 21 to the light receiving element 31 are molded by potting in a nearly dome shape at the periphery of the light emitting element 21. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  A light-emitting element, a light-receiving element that receives light emitted from the light-emitting element, a light-coupled semiconductor device in which a light-emitting element and a lead frame each die-bonded to the light-emitting element are resin-sealed, and a method for manufacturing the light-coupled semiconductor device And an electronic device on which the optically coupled semiconductor device is mounted.

  With reference to FIGS. 11 and 12, the structure of a conventional double mold type optically coupled semiconductor device will be described together with a manufacturing method.

  11 is a perspective side view showing a schematic configuration of an optically coupled semiconductor device according to a conventional example, and FIG. 12 is a cross-sectional view (hatching is omitted) taken along line YY of FIG.

  First, the light-emitting element 121 and the light-receiving element 131 are individually electrically conductive, such as an Ag paste, at the tip portions (header portions) of the lead frames 111 and 112 made of a metal material such as a Cu alloy or an Fe alloy that is bent in advance. And die-bonding using a die-bonding material (not shown) of an adhesive paste. Then, the light emitting element 121 and the light receiving element 131 are connected to each adjacent lead frame (the light emitting element side lead frame 111, the light receiving element side lead frame 112) with a wire such as an Au wire (the light emitting element side wire 181 and the light receiving element side wire). At 182), wire bonding is performed to connect the wires.

  Next, the entire light emitting element 121 is pre-coated with a silicone resin 171 for stress relaxation and coated. Then, the lead frames 111 and 112 in which the light emitting element 121 and the light receiving element 131 are die-bonded are combined, and spot welding or loading frame setting is performed, so that the light emitting element 121 and the light receiving element 131 are positioned and opposed to each other. In this state, the inner package 141 is formed by performing primary transfer molding with a translucent epoxy resin so that an optical path from the light emitting element 121 to the light receiving element 131 is formed. Then, deburring is performed by mechanically removing the resin burrs in the excess portions where the resin has leaked with a deburring die, a blaster, or the like.

  Next, a light-blocking epoxy resin is applied to the entire outer surface of the inner package 141 so that the incidence of disturbance light and light leakage from the inside can be eliminated and an optical signal from the light emitting element 121 to the light receiving element 131 can be reliably transmitted. The outer transfer package 151 is formed by performing the secondary transfer mold. Then, exterior plating is applied to portions exposed to the outside from the outer package 151 of the lead frames 111 and 112 so as to support between adjacent lead frames and to reduce resin leakage at the time of resin sealing such as a transfer mold. Perform a tie bar cut to remove the auxiliary lead.

  Further, after forming the lead frames 111 and 112 exposed from the package to form external terminals, an insulation withstand voltage test (insulation evaluation between input and output elements), electrical characteristics inspection, appearance inspection, packaging Through these steps, the optically coupled semiconductor device having the structure shown in FIGS. 11 to 12 is completed.

  In such an optically coupled semiconductor device having a double mold structure, a light-emitting element is formed by coating a silicone resin for protecting (pre-coating) the light emitting element and further coating with an additional silicone resin spherical protrusion to form a two-stage coating structure. Patent Document 1 discloses a high transmission efficiency photocoupler in which light from an element is more strongly focused on a light receiving element to improve light transmission efficiency.

Further, in Patent Document 2, in the optically coupled semiconductor device having a double mold structure as described above, a protruding wall is provided on a part of the inner wall of the light-shielding resin (outer package), and the reflecting wall has a high reflectance. An optical coupling device is described that is provided with a film to obtain high light transmission efficiency.
JP-A-5-259502 Japanese Patent Laid-Open No. 5-226689

  However, in the optically coupled semiconductor device of Patent Document 1, light transmission efficiency is improved by bringing the top of the silicone resin closer to the light receiving element, but on the other hand, the withstand voltage that is an important characteristic of the photocoupler is reduced. There was a problem.

  Further, in the optically coupled semiconductor device of Patent Document 2, since a complicated mold structure is required, the manufacturing process is complicated, and further, the reflective film is extended between the light emitting element and the light receiving element. Similar to Patent Document 1, there is a problem that the withstand voltage decreases.

  The present invention has been made in view of such circumstances, and maintains a high withstand voltage by providing an optical path changing resin body that guides light emitted from the light emitting element to the light receiving element at the periphery of the light emitting element. However, an object of the present invention is to provide an optically coupled semiconductor device that can obtain high light transmission efficiency.

  In addition, the present invention includes a step of providing an optical path changing resin body that guides light emitted from the light emitting element to the light receiving element at the periphery of the light emitting element, thereby maintaining high light withstand voltage and high light transmission efficiency. Another object is to provide a method for manufacturing an optically coupled semiconductor device that can be obtained.

  Furthermore, another object of the present invention is to provide an electronic device with excellent light transmission efficiency by mounting the optically coupled semiconductor device according to the present invention.

  An optically coupled semiconductor device according to the present invention is formed by resin-sealing a light emitting element, a light receiving element that receives light emitted from the light emitting element, and a lead frame in which the light emitting element and the light receiving element are each die-bonded. In the optically coupled semiconductor device, an optical path changing resin body that guides light emitted from the light emitting element to the light receiving element is provided in a peripheral portion of the light emitting element.

  With this configuration, most of the light emitted from the light emitting element can be received by the light receiving element. That is, the light emitted from the side surface of the light emitting element as well as the light emitted from the front direction of the light emitting element can be received by the light receiving element, whereby an optically coupled semiconductor device with high light transmission efficiency can be obtained.

  In addition, by appropriately setting the number, size, shape, and position of the optical path changing resin body according to the use of the optical coupling semiconductor, a small optical coupling semiconductor device having high light transmission efficiency while maintaining high withstand voltage. Can be realized.

  In the optically coupled semiconductor device according to the present invention, the optical path changing resin body has a substantially dome shape.

  With this configuration, an optically coupled semiconductor device including an optical path changing resin body that reliably guides light emitted from the light emitting element to the light receiving element can be provided.

  In the optically coupled semiconductor device according to the present invention, the optical path changing resin body is molded by potting.

  With this configuration, the optical path changing resin body can be molded at a reduced cost.

  In the optically coupled semiconductor device according to the present invention, a translucent precoat resin body that covers the light emitting element is provided so as to be connected to the optical path changing resin body.

  With this configuration, light emitted from the side surface of the light emitting element is reliably guided to the light receiving element by refraction or reflection at the interface between the translucent precoat resin body and the optical path changing resin body, so that more light transmission is possible. A highly efficient optically coupled semiconductor device can be obtained.

  In the optically coupled semiconductor device according to the present invention, the optical path changing resin body is provided in each side surface direction of the light emitting element.

  With this configuration, light emitted from each side surface of the light emitting element can be guided to the light receiving element, so that the light transmission efficiency can be further increased.

  In the optically coupled semiconductor device according to the present invention, the optical path changing resin body is provided continuously along the entire circumference in the side surface direction of the light emitting element.

  With this configuration, it is possible to easily provide an optically coupled semiconductor device having high light transmission efficiency, which includes an optical path changing resin body that reliably guides light emitted from each side surface of the light emitting element to the light receiving element. For example, when the optical path changing resin body is formed by potting, the optical path changing resin body can be formed around the light emitting element by simply applying the resin once so as to draw a substantially circular shape around the light emitting element. Therefore, productivity can be improved compared with the case where a plurality of optical path changing resin bodies are formed at a constant interval by performing a plurality of times of application.

  In the optically coupled semiconductor device according to the present invention, the vertex of the optical path changing resin body is higher than the vertex of the light emitting element.

  With this configuration, the light emitted from the side surface of the light emitting element by the optical path changing resin body can be more reliably guided to the light receiving element.

  In the optically coupled semiconductor device according to the present invention, the optical path changing resin body is provided at a position facing the light receiving element.

  With this configuration, light emitted from the side surface of the light emitting element can be reliably guided to the light receiving element while maintaining a sufficient separation distance (internal insulation distance) between the light emitting element and the light receiving element. Thus, it is possible to realize an optically coupled semiconductor device having high light transmission efficiency.

  In the optically coupled semiconductor device according to the present invention, the optical path changing resin body is formed of a thixotropic resin.

  With this configuration, the substantially dome shape of the optical path changing resin body can be maintained.

  In the optically coupled semiconductor device according to the present invention, the optical path changing resin body is formed of a light reflecting resin.

  With this configuration, the light emitted from the side surface of the light emitting element is reflected by the optical path changing resin body, and the reflected light is guided toward the light receiving element. can do.

  In the optically coupled semiconductor device according to the present invention, the optical path changing resin body is formed of a silicone resin containing titanium oxide.

  With this configuration, light emitted from the side surface of the light emitting element is reflected by an optical path changing resin body made of a titanium resin containing titanium oxide having high reflection efficiency, and the reflected light is guided toward the light receiving element. Become. That is, since the amount of light reflected by the optical path changing resin body increases, the amount of light received by the light receiving element also increases, and an optically coupled semiconductor device with higher light transmission efficiency can be obtained.

  In the optically coupled semiconductor device according to the present invention, the optical path changing resin body is formed of an alumina-containing silicone resin.

  With this configuration, light emitted from the side surface of the light emitting element is reflected by an optical path changing resin body made of an alumina-containing silicone resin having high reflection efficiency, and the reflected light is guided toward the light receiving element. Thus, an optically coupled semiconductor device with higher light transmission efficiency can be obtained. Furthermore, since the silicone resin containing alumina hydrate is relatively inexpensive, the production price can be reduced.

  In the optically coupled semiconductor device according to the present invention, the optical path changing resin body is made of a silicone resin containing magnesium oxide.

  With this configuration, light emitted from the side surface of the light emitting element is reflected by an optical path changing resin body made of a silicone resin containing magnesium oxide having high reflection efficiency, and the reflected light is guided toward the light receiving element. Therefore, an optically coupled semiconductor device with higher light transmission efficiency can be obtained.

  In addition, the silicone resin containing magnesium oxide has higher thermal conductivity and higher insulation than the silicone resin containing titanium oxide or alumina. Heat generation of the element can be reduced and stable light emission intensity can be maintained.

  In the optically coupled semiconductor device according to the present invention, the optical path changing resin body is formed of a translucent resin.

  With this configuration, the light emitted from the side surface of the light emitting element is refracted by the transmissive optical path changing resin body and guided to the light receiving element, so that an optically coupled semiconductor device with high light transmission efficiency can be obtained. . In addition, it is easier to improve productivity and reduce the production price as compared with the case where the optical path changing resin body is formed of light reflecting resin.

  In the optically coupled semiconductor device according to the present invention, the light emitting element and the optical path changing resin body are provided on the same lead frame.

  With this configuration, the size of the optically coupled semiconductor device can be reduced.

  In the optically coupled semiconductor device according to the present invention, the lead frame is provided with any one of a groove, a step, and a slit between the optical path changing resin body and the light emitting element.

  With this configuration, the optical path changing resin body can be disposed at a position where the light emitted from the light emitting element is reliably guided to the light receiving element.

  In the optically coupled semiconductor device according to the present invention, the light emitting element and the optical path changing resin body are provided on different lead frames.

  With this configuration, the optical path changing resin body can be provided at an accurate position that reliably guides the light emitted from the side surface of the light emitting element to the light receiving element regardless of the shape, size, and position of the light emitting element. An optically coupled semiconductor device with higher light transmission efficiency can be realized.

  A method for manufacturing an optically coupled semiconductor device according to the present invention includes: a step of die-bonding a light-emitting element to a lead frame; a step of die-bonding a light-receiving element that receives light emitted from the light-emitting element to a lead frame; And a step of resin-sealing the lead frame to which the light receiving element is die-bonded. In the method of manufacturing an optically coupled semiconductor device, light emitted from the light emitting element is received on the periphery of the light emitting element. A step of providing an optical path changing resin body leading to the element is provided.

  With this configuration, it is possible to manufacture an optically coupled semiconductor device with high light transmission efficiency that can receive most of the light emitted from the side surface of the light emitting element by the light receiving element in addition to the light emitted from the front surface of the light emitting element. .

  In addition, by appropriately setting the number, size, shape, and position of the optical path changing resin body according to the application, it is possible to manufacture a small-sized optically coupled semiconductor device having high light transmission efficiency while maintaining withstand voltage. .

  The method for manufacturing an optically coupled semiconductor device according to the present invention is characterized in that the optical path changing resin body is formed by potting.

  With this configuration, the optical path changing resin body can be molded at a reduced cost.

  An electronic apparatus according to the present invention is characterized in that the above-described optically coupled semiconductor device according to the present invention is mounted.

  With this configuration, since an optically coupled semiconductor device with high light transmission efficiency is mounted, an electronic device with excellent light transmission efficiency can be obtained.

  According to the optically coupled semiconductor device of the present invention, since the optical path changing resin body that guides the light emitted from the light emitting element to the light receiving element is provided in the peripheral portion of the light emitting element, much of the light emitted from the light emitting element is obtained. Light can be received by the light receiving element. That is, the light emitted from the side surface of the light emitting element as well as the light emitted from the front direction of the light emitting element can be received by the light receiving element, so that an optically coupled semiconductor device with high light transmission efficiency can be obtained.

  In addition, by appropriately setting the number, size, shape, and position of the optical path changing resin body according to the use of the optical coupling semiconductor, a small optical coupling semiconductor device having high light transmission efficiency while maintaining high withstand voltage. There is an effect that can be realized.

  Further, according to the optical coupling semiconductor device of the present invention, since the optical path changing resin body has a substantially dome shape, the light emitted from the light emitting element is reliably guided to the light receiving element, and the optical coupling with higher light transmission efficiency. There is an effect that a semiconductor device can be obtained.

  In addition, according to the optically coupled semiconductor device of the present invention, since the optical path changing resin body is molded by potting, there is an effect that the optical path changing resin body can be molded at a reduced cost.

  Further, according to the optically coupled semiconductor device of the present invention, since the translucent precoat resin body that covers the light emitting element is provided so as to be connected to the optical path changing resin body, the light emitted from the side surface of the light emitting element is translucent. The light is reliably guided to the light receiving element by refraction or reflection at the interface between the conductive precoat resin body and the optical path changing resin body, so that an optically coupled semiconductor device with higher light transmission efficiency can be obtained.

  Further, according to the optically coupled semiconductor device according to the present invention, since the optical path changing resin body is provided in each side surface direction of the light emitting element, the light emitted from each side surface of the light emitting element can be guided to the light receiving element. This is advantageous in that the light transmission efficiency can be further increased.

  Further, according to the optically coupled semiconductor device of the present invention, the optical path changing resin body is continuously provided along the entire circumference in the side surface direction of the light emitting element, so that light emitted from each side surface of the light emitting element is surely obtained. In addition, there is an effect that it is possible to easily provide an optically coupled semiconductor device having a high light transmission efficiency provided with an optical path changing resin body that leads to a light receiving element.

  In addition, according to the optically coupled semiconductor device according to the present invention, since the vertex of the optical path changing resin body is at a position higher than the vertex of the light emitting element, the light emitted more reliably from the side surface of the light emitting element by the optical path changing resin body. Can be guided to the light receiving element.

  Further, according to the optically coupled semiconductor device according to the present invention, since the optical path changing resin body is provided at the position facing the light receiving element, the separation distance (internal insulation distance) between the light emitting element and the light receiving element is sufficiently maintained. As a result, the light emitted from the side surface of the light emitting element can be reliably guided to the light receiving element, and an optically coupled semiconductor device having high dielectric strength and high light transmission efficiency can be obtained.

  Further, according to the optically coupled semiconductor device according to the present invention, since the optical path changing resin body is formed of a thixotropic resin, it is possible to maintain the substantially dome shape of the optical path changing resin body. Play.

  Further, according to the optically coupled semiconductor device of the present invention, since the optical path changing resin body is formed of a light reflecting resin, the light emitted from the side surface of the light emitting element is reflected by the optical path changing resin body and Since the light is guided in the direction, the optical coupling semiconductor device having high light transmission efficiency can be obtained.

  Further, according to the optically coupled semiconductor device according to the present invention, the optical path changing resin body is formed of a titanium oxide-containing silicone resin having a high reflection efficiency, and therefore the optical path changing resin body of light emitted from the side surface of the light emitting element. Since the amount of light reflected by the light receiving element increases and the amount of light received by the light receiving element increases, it is possible to realize an optically coupled semiconductor device with higher light transmission efficiency.

  Further, according to the optically coupled semiconductor device according to the present invention, since the optical path changing resin body is formed of an alumina-containing silicone resin having a high reflection efficiency, the optical path changing resin body of light emitted from the side surface of the light emitting element. Since the amount of reflection increases and the amount of light received by the light receiving element increases, it is possible to realize an optically coupled semiconductor device with higher light transmission efficiency.

  Further, since the silicone resin containing alumina hydrate is relatively inexpensive, the production price can be reduced by forming the optical path changing resin body with the silicone resin containing alumina.

  Further, according to the optically coupled semiconductor device according to the present invention, the optical path changing resin body is formed of a magnesium oxide-containing silicone resin having a high reflection efficiency. Therefore, the optical path changing resin body of light emitted from the side surface of the light emitting element is used. Since the amount of light reflected by the light receiving element increases and the amount of light received by the light receiving element increases, it is possible to realize an optically coupled semiconductor device with higher light transmission efficiency.

  Further, since the silicone resin containing magnesium oxide has higher thermal conductivity and higher insulation than the silicone resin containing titanium oxide or alumina, the optical path changing resin body is made of alumina containing silicone resin. By forming, it is possible to reduce heat generation of the light emitting element when the light emitting element generates a large amount of heat and maintain stable light emission intensity.

  Further, according to the optical coupling semiconductor device of the present invention, since the optical path changing resin body is formed of a translucent resin, the light emitted from the side surface of the light emitting element is refracted by the transmissive optical path changing resin body. As a result, the light is guided in the direction of the light receiving element, and an optically coupled semiconductor device with high light transmission efficiency can be obtained.

  Moreover, compared with the case where an optical path changing resin body is formed with a light-reflecting resin, there is an effect that it is easy to improve productivity and reduce the production price.

  In addition, according to the optically coupled semiconductor device according to the present invention, since the light emitting element and the optical path changing resin body are provided on the same lead frame, there is an effect that downsizing can be achieved.

  Further, according to the optically coupled semiconductor device of the present invention, the lead frame is provided with any one of a groove, a step, and a slit between the optical path changing resin body and the light emitting element, so that the light emitted from the light emitting element is emitted. There is an effect that the optical path changing resin body can be arranged at a position where it is surely guided to the light receiving element.

  Further, according to the optical coupling device of the present invention, the light emitting element and the optical path changing resin body are provided on different lead frames, and can be emitted from the side surface of the light emitting element regardless of the shape, size, and position of the light emitting element. Since the optical path changing resin body can be provided at an appropriate position for reliably guiding the emitted light to the light receiving element, it is possible to realize an optically coupled semiconductor device with higher light transmission efficiency.

  In addition, according to the method for manufacturing an optically coupled semiconductor device according to the present invention, since the optical path changing resin body that guides the light emitted from the light emitting element to the light receiving element is provided in the periphery of the light emitting element, the light emitting element is provided. In addition to the light emitted from the front surface of the element, there is an effect that it is possible to manufacture an optically coupled semiconductor device with high light transmission efficiency that can receive most of the light emitted from the side surface of the light emitting element by the light receiving element.

  Further, according to the method for manufacturing an optically coupled semiconductor device according to the present invention, since the optical path changing resin body is formed by potting, there is an effect that the optical path changing resin body can be formed at a reduced cost.

  In addition, according to the electronic device according to the present invention, since the above-described optically coupled semiconductor device with high light transmission efficiency according to the present invention is mounted, it is possible to obtain an electronic device with excellent light transmission efficiency. Play.

  Embodiments of the present invention will be described below with reference to the drawings.

<Embodiment 1>
The optically coupled semiconductor device according to the present embodiment shown in FIGS. 1 to 4 will be described together with a manufacturing method.

  FIG. 1 is a perspective side view showing a schematic configuration of the optically coupled semiconductor device according to the first embodiment, and FIG. 2 is a cross-sectional view (hatching is omitted) taken along line XX of FIG. FIG. 3 is an explanatory diagram for explaining an arrangement mode of the optical path changing resin body in the optically coupled semiconductor device according to the first embodiment, and is a plan view showing a peripheral portion of the light emitting element.

  In FIG. 3, since the light emitting element 21 is covered with the translucent precoat resin body 71, the light emitting element 21 and the electrode 81e of the light emitting element 21 are indicated by dotted lines.

  The optically coupled semiconductor device according to the present embodiment has a double mold structure, and includes a light emitting element 21, a light receiving element 31 that receives light emitted from the light emitting element 21, and the light emitting element 21 and the light receiving element 31. A die-bonded lead frame (light emitting element side lead frame 11, light receiving element side lead frame 12), an inner package 41 for resin-sealing the lead frames 11 and 12, and an outer package 51 for resin-sealing the outer periphery of the inner package 41 It consists of and.

  The light-emitting element 21 is die-bonded to the tip portion of the light-emitting element-side lead frame 11 with a die bond material (not shown) such as a conductive paste. Further, the light emitting element 21 is wire-bonded to the light emitting element side lead frame 11 with a wire (light emitting element side wire 81).

  In addition, four optical path changing resin bodies 61, 62, 63, and 64 that guide light emitted from the light emitting element 21 to the light receiving element 31 are provided in the periphery of the light emitting element 21. Specifically, the optical path changing resin bodies 61, 62, 63, 64 are provided on the light emitting element side lead frame 11 to which the light emitting element 21 is die-bonded. As shown in FIG. One is provided in each side direction. That is, the light emitted from each side surface of the light emitting element 21 is guided to the light receiving element 31 by the optical path changing resin bodies 61, 62, 63, 64.

  The light emitting element side lead frame 11 is preferably provided with a groove, a step, or a slit (not shown) between the light path changing resin bodies 61, 62, 63, 64 and the light emitting element 31. In this way, the optical path changing resin bodies 61, 62, 63, 64 can be arranged at positions where the light emitted from the light emitting element 31 is reliably guided to the light receiving element 21.

  Further, the optical path changing resin bodies 61, 62, 63, 64 are made of a translucent resin and are formed into a substantially dome shape by potting. At this time, the vertexes of the optical path changing resin bodies 61, 62, 63, 64 are formed so as to be positioned higher than the vertex of the light emitting element 21. That is, the light emitted from the side surface of the light emitting element 21 is reliably guided to the light receiving element 31 by the optical path changing resin bodies 61, 62, 63, 64.

  Moreover, it is preferable that the optical path changing resin bodies 61, 62, 63, 64 are formed of a resin having thixotropy so that a substantially dome shape can be maintained after potting. Specifically, when a 1 cc resin is applied on a clean glass, the diameter of the resin expands from 11 mm to 27 mm, more preferably from 19 mm to 24 mm. It is possible to maintain the substantially domed shape of 62, 63, 64.

  Further, a translucent precoat resin body 71 covering the light emitting element 21 is formed to be connected to the optical path changing resin bodies 61, 62, 63, 64 by potting. That is, the light emitted from the light emitting element 21 is refracted when entering the interface between the translucent precoat resin body 71 and the optical path changing resin bodies 61, 62, 63, 64. The translucent precoat resin body 71 is formed of a silicone resin for junction coating.

  Similarly to the light emitting element 21, the light receiving element 31 is die-bonded to the tip end portion of the light receiving element side lead frame 12 with a die bonding material (not shown) such as a conductive paste. Further, the light receiving element 31 is wire-bonded to the light receiving element side lead frame 12 with a wire (light receiving element side wire 82).

  The light receiving element side lead frame 12 and the light emitting element side lead frame 11 are configured such that the optical path changing resin bodies 61, 62, 63 and 64 on the light emitting element side lead frame 11 are opposed to the light receiving element 31 on the light receiving element side lead frame 12. It is set so as to be disposed at a position, and is resin-sealed by an inner package 41 made of a translucent epoxy resin.

  Further, the outer periphery of the inner package 41 is surrounded by an outer package 51 made of a light-shielding epoxy resin so that there is no incident light of external light or light leakage from the inside, and an optical signal can be transmitted from the light emitting element 21 to the light receiving element 31. Resin-sealed.

  In the method for manufacturing the optically coupled semiconductor device according to the above-described embodiment, as in the method for manufacturing the optically coupled semiconductor device according to the conventional example, the step of die-bonding the light emitting element 21 to the light emitting element side lead frame 11 and the light receiving element 31 is die-bonded to the light receiving element side lead frame 12, the light emitting element side lead frame 11 and the light receiving element side lead frame 12 are resin-sealed by the inner package 41, and the outer periphery of the inner package 41 is resin-sealed by the outer package 51. And a step of stopping.

  In addition, the optical coupling semiconductor device having a high light transmission efficiency can be provided at a reduced cost by providing a step of providing optical path changing resin bodies 61, 62, 63, 64 in the peripheral part of the light emitting element 21 in a substantially dome shape by potting. It is possible to manufacture.

  Further, the optically coupled semiconductor device according to the present embodiment is similar to the optically coupled semiconductor device according to the conventional example in that the lead frame is externally plated (omitted if the lead frame is subjected to plating surface treatment from the beginning), the tie bar. Completed after cutting and forming.

  FIG. 4 is an explanatory diagram for explaining an optical path of light emitted from the light emitting element in the optically coupled semiconductor device according to the first embodiment.

  The light emitted from the front surface of the light emitting element 21 is guided toward the light receiving element via the translucent precoat resin body 71 as indicated by arrows L1 and L2 in the figure.

  The light emitted from the side surface of the light emitting element 21 is guided in the directions of arrows L3 and L4 in the figure by the optical path changing resin bodies 61, 62, 63, and 64. Specifically, light emitted from the side surface of the light emitting element 21 is first guided to the optical path changing resin bodies 61, 62, 63, 64 via the translucent precoat resin body 71, and the optical path changing resin body. The light guided to 61, 62, 63, 64 is refracted at the interface F <b> 1 between the optical path changing resin bodies 61, 62, 63, 64 and the translucent precoat resin body 71 to further form the inner package 41. The light is refracted at the interface F2 between the translucent epoxy resin and the optical path changing resin bodies 61, 62, 63, 64, and is guided toward the light receiving element.

  Therefore, the light receiving element 31 can receive the light emitted from the side surface of the light emitting element 21 together with the light emitted from the front surface of the light emitting element 21, so that the light transmission efficiency is increased.

<Embodiment 2>
FIG. 5 is an explanatory diagram for explaining the optical path of light emitted from the light emitting element in the optically coupled semiconductor device according to the second embodiment.

  The configuration of the optically coupled semiconductor device according to the present embodiment is the same as that of the optically coupled semiconductor device according to the first embodiment shown in FIGS.

  In the optically coupled semiconductor device according to the present embodiment, as in the first embodiment, the light emitting element 21, the light receiving element 31 that receives light emitted from the light emitting element 21, and the light emitting element 21 and the light receiving element 31 are each die-bonded. Lead frame (light emitting element side lead frame 11, light receiving element side lead frame 12), inner package 41 for resin-sealing the lead frames 11 and 12, and outer package (non-sealing) for the outer periphery of the inner package 41. And a light path changing resin body 61, 62, 63, 64 that guides the light emitted from the light emitting element 21 to the light receiving element 31 in the peripheral portion of the light emitting element 21. It has.

  Further, the light emitting element 21 and the light receiving element 31 are respectively connected to adjacent lead frames (the light emitting element side lead frame 11 and the light receiving element side lead frame 12) with wires such as Au wires (light emitting element side wire 81, light receiving element side wire ( (Not shown)).

  In the same manner as in the first embodiment, four optical path changing resin bodies 61, 62, 63, and 64 are provided in each side surface direction of the light emitting element 21, and a translucent precoat resin body is further provided. 71 is connected to the four optical path changing resin bodies 61, 62, 63, 64 (see FIG. 3).

  However, in the present embodiment, the optical path changing resin bodies 61, 62, 63, 64 are made of a light reflecting resin, and this is different from the first embodiment.

  The light emitted from the front surface of the light emitting element 21 is guided in the direction of the light receiving element through the translucent precoat resin body 71 as indicated by arrows L1 and L2 in FIG.

  Further, the light emitted from the side surface of the light emitting element 21 is guided by the optical path changing resin bodies 61, 62, 63 and 64 in the directions of arrows L 3 and L 4 in FIG. 5 and reaches the light receiving element 31. Specifically, the light emitted from the side surface of the light emitting element 21 is first guided to the optical path changing resin bodies 61, 62, 63, 64 via the translucent precoat resin body 71, and the optical path changing resin body. The light guided to 61, 62, 63, 64 is reflected at the interface F <b> 1 between the optical path changing resin bodies 61, 62, 63, 64 and the translucent precoat resin body 71, and the reflected light is the light receiving element 31. Led in the direction of

  Therefore, the light receiving element 31 can receive the light emitted from the side surface of the light emitting element 21 together with the light emitted from the front surface of the light emitting element 21, so that the light transmission efficiency is increased.

  As the light reflecting resin forming the optical path changing resin bodies 61, 62, 63, 64, it is preferable to use a titanium oxide-containing silicone resin, an alumina-containing silicone resin, or a magnesium oxide-containing silicone resin.

  Titanium oxide-containing silicone resins, alumina-containing silicone resins, and magnesium oxide-containing silicone resins all have high reflectance. Therefore, the optical path changing resin bodies 61, 62, 63, 64 formed of titanium oxide-containing silicone resin, alumina-containing silicone resin, or magnesium oxide-containing silicone resin are emitted from the light emitting element 21, and the optical path changing resin body. A large amount of light incident on 61, 62, 63, 64 can be reflected. That is, since the amount of reflection of light emitted from the light emitting element 21 and incident on the optical path changing resin bodies 61, 62, 63, 64 increases, the amount of light received by the light receiving element 31 also increases, and high light transmission. Efficiency can be obtained.

  Moreover, since the silicone resin containing alumina hydrate is relatively inexpensive, the production price can be reduced by forming the optical path changing resin bodies 61, 62, 63, 64 with the alumina-containing silicone resin.

  Further, the magnesium oxide-containing silicone resin has higher thermal conductivity and higher insulation than the titanium oxide-containing silicone resin or the alumina-containing silicone resin. Therefore, when the optical path changing resin bodies 61, 62, 63, 64 are formed of magnesium oxide-containing silicone resin, the heat generation of the light emitting element 21 when the heat generation amount of the light emitting element 21 is large is reduced and the stable light emission intensity is maintained. Can be made.

<Embodiment 3>
FIG. 6 is a transparent side view showing a schematic configuration of the optically coupled semiconductor device according to the third embodiment.

  The basic configuration of the optically coupled semiconductor device according to the present embodiment is the same as that of the optically coupled semiconductor device according to the first and second embodiments.

  That is, the optically coupled semiconductor device according to the present embodiment includes a light emitting element 21, a light receiving element 31 that receives light emitted from the light emitting element 21, and a lead frame (light emitting element) in which the light emitting element 21 and the light receiving element 31 are die-bonded. The element side lead frame 11, the light receiving element side lead frame 12), the inner package 41 for resin-sealing the lead frames 11 and 12, and the outer package 51 for resin-sealing the outer periphery of the inner package 41 An optical path changing resin body 65 that guides light emitted from the light emitting element 21 to the light receiving element 31 is provided around the light emitting element 21.

  In addition, the light emitting element 21 and the light receiving element 31 are respectively connected to adjacent lead frames (the light emitting element side lead frame 11 and the light receiving element side lead frame 12) with wires such as Au wires (light emitting element side wire 81 and light receiving element side wire 82). ) Is wire bonded.

  Hereinafter, differences from the optically coupled semiconductor device according to the first and second embodiments will be mainly described.

  Only one optical path changing resin body 65 is provided in the side surface direction of one side surface of the light emitting element, and is disposed at a position facing the light receiving element 31. In addition, a translucent precoat resin body 71 that is connected to the optical path changing resin body 65 and covers the light emitting element 21 is provided.

  The optical path changing resin body 65 is formed of a light-transmitting resin similar to that in the first embodiment or a light-reflecting resin similar to that in the second embodiment.

  Such an optically coupled semiconductor device is useful when the light emitting element mounting area is narrow and the optical path changing resin body 65 cannot be provided in each side surface direction of the light emitting element 21. By providing the optical path changing resin body 65 only in the inner package 41 and the outer package 51, the inner package 41 and the outer package 51 can be downsized as compared with the first and second embodiments.

  For this reason, the optically coupled semiconductor device according to the present embodiment is a small-sized optically coupled semiconductor device having high light transmission efficiency.

  Further, in the present embodiment, the optical path changing resin sealing body 65 is attached to the light receiving element 31 even when the separation distance (internal insulation distance) between the light emitting element 21 and the light receiving element 31 is increased in order to ensure the withstand voltage. By providing at the facing position, it is possible to reliably guide the light emitted from the side surface of the light emitting element 21 to the light receiving element 31 and obtain high light transmission efficiency.

  Therefore, as the separation distance between the light emitting element 21 and the light receiving element 31 increases, a design that is superior in safety standard certification in a safety standard certification organization VDE in which a higher insulation standard (double protection) is certified becomes possible.

<Embodiment 4>
FIG. 7 is a transparent side view showing a schematic configuration of the optically coupled semiconductor device according to the fourth embodiment. FIG. 8 is an explanatory diagram for explaining an arrangement mode of the optical path changing resin body in the optically coupled semiconductor device according to the fourth embodiment, and is a plan view showing a peripheral portion of the light emitting element.

  In FIG. 8, since the light emitting element 21 is covered with the translucent precoat resin body 71, the light emitting element 21 and the electrode 81 e of the light emitting element 21 are indicated by dotted lines.

  The basic configuration of the optically coupled semiconductor device according to the present embodiment is the same as that of the optically coupled semiconductor device according to the first to third embodiments.

  That is, the optically coupled semiconductor device according to the present embodiment includes a light emitting element 21, a light receiving element 31 that receives light emitted from the light emitting element 21, and a lead frame in which the light emitting element 21 and the light receiving element 31 are die-bonded (light emission). The element side lead frame 11, the light receiving element side lead frame 12), an inner package 41 for resin-sealing the lead frames 11 and 12, and an outer package 51 for resin-sealing the outer periphery of the inner package 41 It has a mold structure, and is provided with optical path changing resin bodies 66 and 67 for guiding light emitted from the light emitting element 21 to the light receiving element 31 in the periphery of the light emitting element 21.

  In addition, the light emitting element 21 and the light receiving element 31 are respectively connected to adjacent lead frames (the light emitting element side lead frame 11 and the light receiving element side lead frame 12) with wires such as Au wires (light emitting element side wire 81 and light receiving element side wire 82). ) Is wire bonded.

  Hereinafter, differences from the optically coupled semiconductor device according to the first to third embodiments will be mainly described.

  Two optical path changing resin bodies 66 and 67 are provided in the periphery of the light emitting element 21. Specifically, as shown in FIG. 8, the light emitting elements 21 are provided in an elliptical shape one by one in two opposing side surface directions. The major axis length W1 of the ellipse of the optical path changing resin bodies 66 and 67 is longer than the width W2 of the side surface of the light emitting element 21, and the light emitted from each side surface of the light emitting element 21 has two optical paths. The modified resin bodies 66 and 67 are guided to the light receiving element 31.

  The optical path changing resin bodies 66 and 67 are made of a light transmitting resin or a light reflecting resin.

  In such an optically coupled semiconductor device according to the present embodiment, the optical path changing resin bodies 66 and 67 can be formed with a smaller number of times of potting than in the first or second embodiment including four optical path changing resin bodies. Therefore, production efficiency in manufacturing is good.

<Embodiment 5>
FIG. 9 is an explanatory diagram for explaining an arrangement mode of the optical path changing resin body in the optically coupled semiconductor device according to the fifth embodiment, and is a plan view showing a peripheral portion of the light emitting element.

  In FIG. 9, since the light emitting element 21 is covered with the translucent precoat resin body 71, the light emitting element 21 and the electrode 81 e of the light emitting element 21 are indicated by dotted lines.

  The basic configuration of the optically coupled semiconductor device according to the present embodiment is the same as that of the optically coupled semiconductor device according to the first to fourth embodiments.

  That is, the optically coupled semiconductor device according to the present embodiment includes a light emitting element 21, a light receiving element (not shown) that receives light emitted from the light emitting element 21, and a lead frame in which the light emitting element 21 and the light receiving element are each die-bonded. (Not shown), and has a double mold structure composed of an inner package (not shown) for resin-sealing the lead frame and an outer package (not shown) for resin-sealing the outer periphery of the inner package An optical path changing resin body 68 that guides light emitted from the light emitting element 21 to the light receiving element is provided around the light emitting element 21.

  The light emitting element 21 and the light receiving element 31 are wire-bonded to the adjacent lead frames (the light emitting element side lead frame 11 and the light receiving element side lead frame 12) with wires (not shown) such as Au wires.

  Hereinafter, differences from the optically coupled semiconductor device according to the first to fourth embodiments will be mainly described.

  The optical path changing resin body 68 is continuously provided along the entire circumference in the side surface direction of the light emitting element 21. That is, the optical path changing resin body 68 is formed by potting the resin once so as to draw a substantially circular shape around the light emitting element 21.

  The optical path changing resin body 68 has a substantially dome shape in cross section, and has a substantially dome shape as a whole.

  The optical path changing resin body 68 is formed of a light transmitting resin or a light reflecting resin.

  In such an optically coupled semiconductor device according to the present embodiment, the optical path changing resin body 68 that guides the light emitted from each side surface of the light emitting element 21 to the light receiving element is provided, thereby obtaining high light transmission efficiency. .

  In addition, since the optical path changing resin body 68 can be formed with a smaller number of pottings compared to the optical coupling semiconductor device (see FIGS. 3 and 8) in which a plurality of optical path changing resin bodies 68 are formed by a plurality of times of potting, Production efficiency in manufacturing is good.

<Embodiment 6>
FIG. 10 is a cross-sectional view (hatching is omitted) showing a schematic configuration of the optically coupled semiconductor device according to the sixth embodiment.

  The basic configuration of the optically coupled semiconductor device according to the present embodiment is the same as that of the optically coupled semiconductor device according to the first to fifth embodiments.

  That is, the optically coupled semiconductor device according to the present embodiment includes a light emitting element 21, a light receiving element 31 that receives light emitted from the light emitting element 21, and a lead frame (light emitting element) in which the light emitting element 21 and the light receiving element 31 are die-bonded. The element side lead frame 11, the light receiving element side lead frame 12), the inner package 41 for resin-sealing the lead frames 11 and 12, and the outer package 51 for resin-sealing the outer periphery of the inner package 41 It has a mold structure, and is provided with optical path changing resin bodies 61, 62, 63, and 64 that guide light emitted from the light emitting element 21 to the light receiving element 31 at the periphery of the light emitting element 21.

  Further, the light emitting element 21 and the light receiving element 31 are respectively connected to adjacent lead frames (the light emitting element side lead frame 11 and the light receiving element side lead frame 12) with wires such as Au wires (light emitting element side wire 81, light receiving element side wire ( (Not shown)).

  Hereinafter, differences from the optically coupled semiconductor device according to the first to fifth embodiments will be mainly described.

  Four optical path changing resin bodies 61, 62, 63, 64 are provided, one in each side surface direction of the light emitting element 21, as in the first embodiment or the second embodiment (see FIG. 3). .

  Further, unlike the first to fifth embodiments, the optical path changing resin bodies 61, 62, 63, 64 are different from the lead frame (the light emitting element side lead frame 11) to which the light emitting element 21 is die-bonded. 13 and 14 are provided on the plane. That is, regardless of the shape, size, and position of the light emitting element 21, the optical path changing resin bodies 61, 62, 63, and 64 can be provided at positions that reliably guide the light emitted from the light emitting element 21 to the light receiving element 31. It has a configuration.

  In the present embodiment, the optical path changing resin bodies 61, 62, 63, 64 provided on a lead frame different from the light emitting element side lead frame 11 are provided on the respective side surfaces of the light emitting element 21 as in the first embodiment. Although arranged in the direction (see FIG. 3), the optical path changing resin bodies 61, 62, 63, and 64 provided on a lead frame different from the light emitting element side lead frame 11 are the third to third embodiments. 5 (see FIGS. 6 to 9).

  Further, the optical path changing resin bodies 61, 62, 63, 64 may be formed of a transmissive resin or may be formed of a light reflective resin.

<Embodiment 7>
An electronic device (not shown) according to the present embodiment includes the optically coupled semiconductor device described in any of Embodiments 1 to 6. Since an optically coupled semiconductor device with high light transmission efficiency is mounted, the electronic device has excellent light transmission efficiency.

1 is a perspective side view showing a schematic configuration of an optically coupled semiconductor device according to a first embodiment of the present invention. It is sectional drawing which follows the XX line of FIG. It is explanatory drawing explaining the arrangement | positioning aspect of the optical path change resin body in the optical coupling semiconductor device which concerns on Embodiment 1 of this invention, and is a top view which shows the peripheral part of a light emitting element. In the optical coupling semiconductor device which concerns on Embodiment 1 of this invention, it is explanatory drawing explaining the optical path of the light emitted from the light emitting element. In the optical coupling semiconductor device which concerns on Embodiment 2 of this invention, it is explanatory drawing explaining the optical path of the light emitted from the light emitting element. It is a see-through | perspective side view which shows schematic structure of the optical coupling semiconductor device which concerns on Embodiment 3 of this invention. It is a see-through | perspective side view which shows schematic structure of the optical coupling semiconductor device which concerns on Embodiment 4 of this invention. It is explanatory drawing explaining the arrangement | positioning aspect of the optical path change resin body in the optical coupling semiconductor device which concerns on Embodiment 4 of this invention, and is a top view which shows the peripheral part of a light emitting element. It is explanatory drawing explaining the arrangement | positioning aspect of the optical path change resin body in the optical coupling semiconductor device which concerns on Embodiment 5 of this invention, and is a top view which shows the peripheral part of a light emitting element. It is sectional drawing which shows schematic structure of the optical coupling semiconductor device which concerns on Embodiment 6 of this invention. It is a see-through | perspective side view which shows schematic structure of the optical coupling semiconductor device which concerns on a prior art example. It is sectional drawing which follows the YY line of FIG.

Explanation of symbols

11 Light emitting element side lead frame 12 Light receiving element side lead frame 13, 14 Lead frame (for mounting optical path changing resin body)
21 Light emitting element 31 Light receiving element 41 Inner package 51 Outer package 61, 62, 63, 64, 65, 66, 67, 68 Optical path changing resin body 71 Translucent precoat resin body 81 Light emitting element side wire 81e Light emitting element electrode 82 Light receiving Element side wires L1, L2, L3, L4 Optical path F1, F2 Interface W1 Long axis length W2 of elliptical optical path changing resin body Length of side surface of light emitting element

Claims (20)

In an optically coupled semiconductor device in which a light emitting element, a light receiving element that receives light emitted from the light emitting element, and a lead frame in which the light emitting element and the light receiving element are each die-bonded are sealed with resin.
An optical coupling semiconductor device characterized in that an optical path changing resin body for guiding light emitted from the light emitting element to the light receiving element is provided in a peripheral portion of the light emitting element.   The optically coupled semiconductor device according to claim 1, wherein the optical path changing resin body has a substantially dome shape.   3. The optically coupled semiconductor device according to claim 1, wherein the optical path changing resin body is formed by potting.   4. The optically coupled semiconductor device according to claim 1, wherein a translucent precoat resin body that covers the light emitting element is provided so as to be connected to the optical path changing resin body. 5.   5. The optically coupled semiconductor device according to claim 1, wherein the optical path changing resin body is provided in each side surface direction of the light emitting element.   5. The optically coupled semiconductor device according to claim 1, wherein the optical path changing resin body is continuously provided along an entire circumference in a side surface direction of the light emitting element.   7. The optically coupled semiconductor device according to claim 1, wherein an apex of the optical path changing resin body is higher than an apex of the light emitting element.   8. The optically coupled semiconductor device according to claim 1, wherein the optical path changing resin body is provided at a position facing the light receiving element. 9.   9. The optically coupled semiconductor device according to claim 1, wherein the optical path changing resin body is made of a thixotropic resin. 10.   10. The optically coupled semiconductor device according to claim 1, wherein the optical path changing resin body is formed of a light reflecting resin.   11. The optically coupled semiconductor device according to claim 10, wherein the optical path changing resin body is formed of a titanium oxide-containing silicone resin.   The optically coupled semiconductor device according to claim 10, wherein the optical path changing resin body is formed of an alumina-containing silicone resin.   11. The optically coupled semiconductor device according to claim 10, wherein the optical path changing resin body is formed of a magnesium oxide-containing silicone resin.   10. The optically coupled semiconductor device according to claim 1, wherein the optical path changing resin body is formed of a translucent resin. 11.   15. The optically coupled semiconductor device according to claim 1, wherein the light emitting element and the optical path changing resin body are provided on the same lead frame.   16. The optically coupled semiconductor device according to claim 15, wherein the lead frame is provided with any one of a groove, a step, and a slit between the optical path changing resin body and the light emitting element.   15. The optically coupled semiconductor device according to claim 1, wherein the light emitting element and the optical path changing resin body are provided on different lead frames. A step of die-bonding the light-emitting element to the lead frame; a step of die-bonding a light-receiving element that receives light emitted from the light-emitting element to the lead frame; a lead frame that is die-bonded to the light-emitting element; and a lead that is die-bonded to the light-receiving element In a method for manufacturing an optically coupled semiconductor device comprising a step of resin-sealing a frame,
A method for manufacturing an optically coupled semiconductor device, comprising: a step of providing an optical path changing resin body that guides light emitted from the light emitting element to the light receiving element at a peripheral portion of the light emitting element.   19. The method of manufacturing an optically coupled semiconductor device according to claim 18, wherein the optical path changing resin body is molded by potting.   An electronic device, wherein the optically coupled semiconductor device according to claim 1 is mounted.

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