JP2008028224A - Optical semiconductor device, and manufacturing method thereof - Google Patents

Optical semiconductor device, and manufacturing method thereof Download PDF

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JP2008028224A
JP2008028224A JP2006200539A JP2006200539A JP2008028224A JP 2008028224 A JP2008028224 A JP 2008028224A JP 2006200539 A JP2006200539 A JP 2006200539A JP 2006200539 A JP2006200539 A JP 2006200539A JP 2008028224 A JP2008028224 A JP 2008028224A
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resin
substrate
semiconductor device
protective film
optical semiconductor
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Toshio Hanada
俊雄 花田
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Rohm Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an optical semiconductor device capable of preventing resin for protective films from leaking and reducing manufacturing time, and to provide an optical semiconductor device. <P>SOLUTION: The manufacturing method of an optical semiconductor device comprises: a frame section forming process for installing a form 11 on a substrate 2, filling a heated thermoplastic resin into the form 11, and cooling the resin for curing for integrally performing the resin forming of the frame section 3 where an opening 3a is formed to the substrate 2; an element installation process for installing a light-emitting diode 5 onto the substrate 2 exposed from the opening 3a of the frame section 3; and a protective film formation process for filling resin into the opening 3a of the frame section 3, and curing at room temperature without heating so that the surface of the resin becomes flat to form a protective film 6. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、基板と基板上に設けられた枠部を有する光半導体装置の製造方法及び光半導体装置に関する。   The present invention relates to a method for manufacturing an optical semiconductor device having a substrate and a frame portion provided on the substrate, and the optical semiconductor device.

従来、基板と開口部が形成された枠部を接着し、その開口部に受光又は発光半導体素子を設けた光半導体装置が知られている。   2. Description of the Related Art Conventionally, an optical semiconductor device is known in which a substrate and a frame portion in which an opening is formed are bonded and a light receiving or light emitting semiconductor element is provided in the opening.

例えば、特許文献１には、基板と、開口部が形成された枠部と、半導体素子と、樹脂製の保護膜とを備えた光半導体装置が開示されている。この半導体装置では、基板と枠部とが接着剤により接着されている。枠部の開口部により露出された基板の面上には、半導体素子が設置されるとともに、半導体素子と基板上の配線とがワイヤボンディングされている。また、枠部の開口部には、半導体素子及びワイヤを保護するための樹脂製の保護膜が充填されている。
実開昭５９−２６２５４号公報 For example, Patent Document 1 discloses an optical semiconductor device including a substrate, a frame portion in which an opening is formed, a semiconductor element, and a resin protective film. In this semiconductor device, the substrate and the frame portion are bonded with an adhesive. A semiconductor element is placed on the surface of the substrate exposed by the opening of the frame part, and the semiconductor element and a wiring on the substrate are wire-bonded. The opening of the frame is filled with a protective film made of resin for protecting the semiconductor element and the wire.
Japanese Utility Model Publication No.59-26254

しかしながら、上述の特許文献１の光半導体装置では、枠部と基板とを接着剤によって接着しているが、接着剤を枠部と基板との間に均等に塗布することは困難である。このため、枠部と基板との間には、隙間ができるために接着後に充填される保護膜用の樹脂の粘度が低いと、樹脂が基板と枠部との間に形成された隙間を通って外部へ漏れるといった問題があった。また、樹脂の漏れを防ぐために粘度の高い樹脂を採用した場合、枠部の開口部の全体に樹脂を行き渡らせ、樹脂の表面を平坦にすることが困難であり、また、できたとしても必要な時間が増大するために製造時間が長くなるといった問題があった。   However, in the optical semiconductor device of Patent Document 1 described above, the frame portion and the substrate are bonded with an adhesive, but it is difficult to evenly apply the adhesive between the frame portion and the substrate. For this reason, since there is a gap between the frame portion and the substrate, if the viscosity of the resin for the protective film filled after bonding is low, the resin passes through the gap formed between the substrate and the frame portion. There was a problem of leaking outside. Also, when a highly viscous resin is used to prevent resin leakage, it is difficult, if necessary, to spread the resin over the entire opening of the frame and flatten the resin surface. There is a problem that the manufacturing time becomes longer due to an increase in the time required.

本発明は、上述した課題を解決するために創案されたものであり、保護膜用の樹脂の漏れを防ぎ、製造時間を短縮することが可能な光半導体装置の製造方法及び光半導体装置を提供することを目的としている。   The present invention has been made to solve the above-described problems, and provides an optical semiconductor device manufacturing method and an optical semiconductor device capable of preventing leakage of a resin for a protective film and reducing manufacturing time. The purpose is to do.

上記目的を達成するために、請求項１記載の発明は、基板上に型枠を設置して、前記型枠内に樹脂を充填して硬化させることにより開口部が形成された枠部を基板と一体的になるように樹脂成型する枠部成型工程と、前記枠部の開口部により露出される基板上に受光又は発光半導体素子を設置する素子設置工程と、前記枠部の開口部に樹脂を充填した後、前記樹脂の表面が平坦になるように硬化させて保護膜を形成する保護膜形成工程とを備えたことを特徴とする光半導体装置の製造方法である。   In order to achieve the above object, according to the first aspect of the present invention, a frame is formed on a substrate by placing a mold on the substrate, filling the mold with resin, and curing the frame. A frame molding process for molding the resin so as to be integrated with each other, an element installation process for installing a light receiving or light emitting semiconductor element on the substrate exposed by the opening of the frame, and a resin in the opening of the frame And a protective film forming step of forming a protective film by curing the resin so that the surface of the resin is flattened, and then manufacturing the optical semiconductor device.

また、請求項２の発明は、前記保護膜形成工程は、室温で行われることを特徴とする請求項１に記載の光半導体装置の製造方法である。尚、ここでいう「室温」とは、非加熱で約０℃〜約４０℃の温度のことである。   The invention of claim 2 is the method of manufacturing an optical semiconductor device according to claim 1, wherein the protective film forming step is performed at room temperature. Here, “room temperature” means a temperature of about 0 ° C. to about 40 ° C. without heating.

また、請求項３の発明は、前記保護膜形成工程は、大気圧以下の雰囲気中で行われることを特徴とする請求項１または２のいずれか１項に記載の光半導体装置の製造方法である。   According to a third aspect of the present invention, in the method of manufacturing an optical semiconductor device according to any one of the first and second aspects, the protective film forming step is performed in an atmosphere at atmospheric pressure or lower. is there.

また、請求項４の発明は、前記枠部は、黒色の樹脂からなることを特徴とする請求項１〜３のいずれか１項に記載の光半導体装置の製造方法である。   The invention of claim 4 is the method for manufacturing an optical semiconductor device according to any one of claims 1 to 3, wherein the frame portion is made of a black resin.

また、請求項５の発明は、基板と、樹脂成型により前記基板に一体的に成型され、開口部が形成された枠部と、前記枠部の開口部により露出された基板の領域に設けられた受光又は発光半導体素子と、前記受光又は発光半導体素子を覆うように前記枠部の開口部に表面が平坦になるように形成された保護膜とを備えたことを特徴とする光半導体装置である。   Further, the invention of claim 5 is provided in a region of the substrate, a frame portion formed integrally with the substrate by resin molding, in which an opening is formed, and a substrate exposed by the opening of the frame portion. An optical semiconductor device comprising: a light receiving or light emitting semiconductor element; and a protective film formed on the opening of the frame portion so as to cover the light receiving or light emitting semiconductor element so as to have a flat surface. is there.

本発明の光半導体装置の製造方法によれば、枠部成型工程において基板上に枠部を樹脂成型により一体的に形成するので、基板と枠部との間に隙間が形成されることがない。これにより、保護膜形成工程において、保護膜を構成する樹脂を枠部の開口部に充填する際に、基板と枠部との間からの樹脂漏れを防止することができる。   According to the method for manufacturing an optical semiconductor device of the present invention, since the frame portion is integrally formed on the substrate by resin molding in the frame portion molding step, no gap is formed between the substrate and the frame portion. . Thereby, in the protective film forming step, when the resin constituting the protective film is filled in the opening of the frame part, resin leakage from between the substrate and the frame part can be prevented.

また、保護膜形成工程において樹脂漏れを防ぐことができるので、低粘度の樹脂を用いて保護膜を形成することができる。これにより、枠部の開口部に樹脂を行き渡らせて保護膜の表面を平坦にするのに必要な時間を短縮することができる。   Moreover, since the resin leakage can be prevented in the protective film forming step, the protective film can be formed using a low-viscosity resin. As a result, the time required to flatten the surface of the protective film by spreading the resin over the opening of the frame can be shortened.

また、枠部を成型した後、保護膜形成工程を行うので、枠部成型工程における枠部を構成する樹脂の熱による透明度等の保護膜の特性の劣化を抑制することができる。   Moreover, since a protective film formation process is performed after shape | molding a frame part, deterioration of the characteristics of protective films, such as transparency by the heat | fever of the resin which comprises the frame part in a frame part formation process, can be suppressed.

以下、図面を参照して本発明の一実施形態を説明する。図１は、本発明による光半導体装置の断面図である。図２は、本発明による光半導体装置の平面図である。尚、図１は、図２におけるＡ−Ａ線に沿った断面図である。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view of an optical semiconductor device according to the present invention. FIG. 2 is a plan view of an optical semiconductor device according to the present invention. 1 is a cross-sectional view taken along line AA in FIG.

図１及び図２に示すように、光半導体装置１は、基板２と、枠部３と、複数の発光ダイオード（請求項記載の発光半導体素子）５と、保護膜６とを備えている。   As shown in FIGS. 1 and 2, the optical semiconductor device 1 includes a substrate 2, a frame portion 3, a plurality of light emitting diodes (light emitting semiconductor elements according to claims) 5, and a protective film 6.

基板２は、ガラスエポキシ基板からなる。基板２には、発光ダイオード５の端子が金細線７を介してワイヤボンディングされる配線がプリントされている。   The substrate 2 is made of a glass epoxy substrate. The substrate 2 is printed with wiring in which the terminals of the light-emitting diodes 5 are wire-bonded via the fine gold wires 7.

枠部３は、ポリアミド系樹脂等の熱可塑性樹脂からなる。また、枠部３は、発光ダイオード５からの光の反射を抑制すために黒色の樹脂により構成されている。尚、枠部３を構成する樹脂としては、加熱時の熱膨張率の違いに起因する基板２とからの剥離を防止するためにある程度の柔軟性を有するものが望ましい。枠部３は、基板２と外形が同じ矩形状に形成されると共に、基板２と一体的に形成されている。枠部３の中央部には、矩形状の開口部３ａが形成されている。   The frame part 3 consists of thermoplastic resins, such as a polyamide-type resin. The frame portion 3 is made of a black resin in order to suppress reflection of light from the light emitting diode 5. In addition, as resin which comprises the frame part 3, what has a certain amount of flexibility is desirable in order to prevent the peeling from the board | substrate 2 resulting from the difference in the thermal expansion coefficient at the time of a heating. The frame 3 is formed in the same rectangular shape as the substrate 2 and is formed integrally with the substrate 2. A rectangular opening 3 a is formed at the center of the frame 3.

発光ダイオード５は、シリコン等の半導体等からなり、枠部３の開口部３ａにより露出された基板２の面上の所定の位置に配置され、金細線７により基板２上の配線にワイヤボンディングされている。   The light emitting diode 5 is made of a semiconductor such as silicon, and is disposed at a predetermined position on the surface of the substrate 2 exposed by the opening 3 a of the frame portion 3. ing.

保護膜６は、発光ダイオード５や金細線７等を保護するためのものである。保護膜６は、発光ダイオード５や金細線７等を覆い、枠部３の開口部３ａ内を埋めるように且つ表面が平坦になるように形成されている。保護膜６は、光を透過することができ、室温で硬化可能な樹脂（自然硬化性樹脂）からなる。更に、保護膜６を構成する樹脂として、容易に枠部３の開口部３ａ内に充填でき、短時間で表面が平坦になるように、硬化前の室温での粘度が低い樹脂を採用している。このような樹脂としては、例えば、約２５℃での硬化前の粘度が２０Ｐａ・ｓ以下、より好ましくは２Ｐａ・ｓ以下のシリコーン樹脂等を適用できる。   The protective film 6 is for protecting the light emitting diode 5, the gold thin wire 7, and the like. The protective film 6 is formed so as to cover the light emitting diode 5, the gold thin wire 7, and the like, fill the opening 3 a of the frame 3, and have a flat surface. The protective film 6 is made of a resin that can transmit light and is curable at room temperature (naturally curable resin). Further, as the resin constituting the protective film 6, a resin having a low viscosity at room temperature before curing is employed so that the opening 3a of the frame 3 can be easily filled and the surface becomes flat in a short time. Yes. As such a resin, for example, a silicone resin having a viscosity before curing at about 25 ° C. of 20 Pa · s or less, more preferably 2 Pa · s or less can be applied.

次に、図３〜図６を参照して、上述した光半導体装置の製造方法に説明する。図３〜図６は、光半導体装置の各製造工程における断面図である。尚、以下に説明する光半導体装置の製造方法は、複数の光半導体装置を同一基板上に同時に製造し、最後に各光半導体装置に分割するものである。   Next, with reference to FIGS. 3 to 6, the above-described method for manufacturing an optical semiconductor device will be described. 3 to 6 are cross-sectional views in each manufacturing process of the optical semiconductor device. In the optical semiconductor device manufacturing method described below, a plurality of optical semiconductor devices are manufactured simultaneously on the same substrate, and finally divided into optical semiconductor devices.

まず、図３に示すように、基板２上に型枠１１を設置する。型枠１１には、枠部３が形成される領域に空間１１ａが形成されている。   First, as shown in FIG. 3, the mold 11 is installed on the substrate 2. In the mold 11, a space 11 a is formed in a region where the frame portion 3 is formed.

次に、図４に示すように、型枠１１の空間１１ａに樹脂を充填する。具体的には、約２００℃に加熱されて液状になった黒色のポリアミド系樹脂を型枠１１の空間１１ａに充填する。その後、冷却してポリアミド系樹脂を硬化させて枠部３を基板２と一体的になるように樹脂成型した後、型枠１１を取り外す（枠部成型工程）。   Next, as shown in FIG. 4, the space 11a of the mold 11 is filled with resin. Specifically, the space 11 a of the mold 11 is filled with a black polyamide-based resin that is heated to about 200 ° C. and becomes liquid. Then, after cooling and hardening a polyamide-type resin and resin-molding so that the frame part 3 may become integral with the board | substrate 2, the mold 11 is removed (frame part molding process).

次に、図５に示すように、枠部３の開口部３ａにより露出された基板２の所定の領域に発光ダイオード５を設置する。そして、基板２にプリントされた配線と金細線７によりワイヤボンディングする（素子設置工程）。   Next, as shown in FIG. 5, the light emitting diode 5 is installed in a predetermined region of the substrate 2 exposed by the opening 3 a of the frame 3. Then, wire bonding is performed by the wiring printed on the substrate 2 and the gold thin wire 7 (element installation step).

次に、図６に示すように、枠部３の開口部３ａの内部に、注出圧力等により樹脂量が調整された樹脂（自然硬化性樹脂）を充填する。ここで充填する樹脂としては、表面を平坦にしつつ開口部３ａの全体に短時間で行き渡らせるために、例えば、約２５℃における硬化前の粘度が約２０Ｐａ・ｓ以下、より好ましくは約２Ｐａ・ｓ以下のシリコーン樹脂などを適用できる。その後、大気圧雰囲気中又は減圧雰囲気中において加熱することなく室温（例えば、約０℃〜約４０℃）で放置して樹脂を硬化させて、保護膜６を形成する（保護膜形成工程）。   Next, as shown in FIG. 6, a resin (natural curable resin) whose amount of resin is adjusted by the pouring pressure or the like is filled in the opening 3 a of the frame 3. As the resin to be filled here, in order to spread the entire surface of the opening 3a in a short time while flattening the surface, for example, the viscosity before curing at about 25 ° C. is about 20 Pa · s or less, more preferably about 2 Pa · s. It is possible to apply a silicone resin of s or less. Thereafter, the resin is cured by leaving it at room temperature (for example, about 0 ° C. to about 40 ° C.) without heating in an atmospheric pressure atmosphere or a reduced pressure atmosphere to form the protective film 6 (protective film forming step).

最後に、図６に示す点線Ｌに沿って各光半導体装置１を分割することにより、光半導体装置１が完成する。   Finally, the optical semiconductor device 1 is completed by dividing each optical semiconductor device 1 along the dotted line L shown in FIG.

上述したように、本発明による光半導体装置の製造方法によれば、樹脂を型枠１１により成型することによって枠部３を基板２と一体に形成しているので、基板２と枠部３との間に隙間が形成されることなく容易に基板２と枠部３とを構成することができる。これにより、枠部３の開口部３ａに保護膜６を構成する樹脂を充填する際に、基板２と枠部３との間からの樹脂漏れを防止することができる。   As described above, according to the method for manufacturing an optical semiconductor device according to the present invention, the frame 3 is formed integrally with the substrate 2 by molding the resin with the mold 11. The substrate 2 and the frame portion 3 can be easily configured without forming a gap between them. Thereby, when the opening 3a of the frame part 3 is filled with the resin constituting the protective film 6, resin leakage from between the substrate 2 and the frame part 3 can be prevented.

また、基板２と枠部３との間からの樹脂漏れを防止することにより、硬化前の粘度が低い樹脂により保護膜６を形成することができるので、枠部３の開口部３ａに短時間で樹脂を行き渡らせることができると共に、保護膜６の表面を短時間で平坦にすることができる。これにより、光半導体装置１の製造時間を短縮することができる。   Further, by preventing resin leakage from between the substrate 2 and the frame portion 3, the protective film 6 can be formed with a resin having a low viscosity before curing, so that the opening 3a of the frame portion 3 can be formed in a short time. Thus, the resin can be spread and the surface of the protective film 6 can be flattened in a short time. Thereby, the manufacturing time of the optical semiconductor device 1 can be shortened.

更に、保護膜６の表面を平坦にすることにより、発光ダイオード５からの光が保護膜６の表面で乱反射されることを抑制することができるので、発光ダイオード５からの光を広げることなく外部へ照射することができる。   Furthermore, since the surface of the protective film 6 is flattened, it is possible to prevent the light from the light emitting diode 5 from being irregularly reflected on the surface of the protective film 6. Can be irradiated.

また、枠部３を成型した後、保護膜形成工程を行うので、枠部成型工程における枠部３の樹脂の加熱に起因する透明度などの保護膜６の特性の劣化等を防ぐことができる。   Further, since the protective film forming step is performed after the frame portion 3 is molded, it is possible to prevent deterioration of the characteristics of the protective film 6 such as transparency due to heating of the resin of the frame portion 3 in the frame portion molding step.

また、保護膜６を構成する樹脂を加熱せずに室温で硬化させて保護膜６を形成することにより、当該樹脂の底部に存在する気泡が表面に移動することを抑制することができる。これにより、気泡による発光ダイオード５の光の散乱を抑制することができる。更に、樹脂を大気圧以下の雰囲気中で硬化させて保護膜６を形成することにより、樹脂内の気泡を抜くことができるので、保護膜６内の気泡を減少させることができる。   Moreover, the resin which comprises the protective film 6 is hardened at room temperature, without heating, and the protective film 6 is formed, and it can suppress that the bubble which exists in the bottom part of the said resin moves to the surface. Thereby, scattering of the light of the light emitting diode 5 by a bubble can be suppressed. Further, by forming the protective film 6 by curing the resin in an atmosphere at atmospheric pressure or lower, the bubbles in the resin can be removed, so that the bubbles in the protective film 6 can be reduced.

また、黒色の樹脂により枠部３を構成することにより、発光ダイオード５の光が保護膜６の内壁部により反射されることを抑制することができるので、発光ダイオード５の光を広げることなく外部へと照射することができる。   In addition, since the frame portion 3 is made of black resin, it is possible to suppress the light of the light emitting diode 5 from being reflected by the inner wall portion of the protective film 6. Can be irradiated.

以上、上記実施形態を用いて本発明を詳細に説明したが、本発明が本明細書中に説明した実施形態に限定されるものではないということは明らかである。本発明は、特許請求の範囲の記載により定まる本発明の趣旨及び範囲内で変更して実施することができる。即ち、本明細書の記載は、一例であり、本発明を何ら限定的な意味に解釈させるものではない。以下、上記実施形態を一部変更した変更形態について説明する。   As mentioned above, although this invention was demonstrated in detail using the said embodiment, it is clear that this invention is not limited to embodiment described in this specification. The present invention can be implemented with modifications within the spirit and scope of the present invention defined by the description of the scope of claims. In other words, the description in the present specification is an example, and the present invention is not construed as being limited in any way. Hereinafter, modified embodiments in which the above-described embodiment is partially modified will be described.

例えば、上述の実施形態では、枠部成型工程を素子設置工程よりも前に行ったが、枠部成型工程を素子設置工程よりも後に行ってもよい。また、その他の工程の順序も適宜変更可能である。   For example, in the above-described embodiment, the frame part molding process is performed before the element installation process, but the frame part molding process may be performed after the element installation process. In addition, the order of other steps can be changed as appropriate.

また、上述の実施形態の保護膜形成工程では、樹脂を室温で硬化させたが、樹脂に加熱硬化性樹脂を採用し、枠部の開口部に充填した樹脂を加熱して硬化させてもよい。   Moreover, in the protective film formation process of the above-mentioned embodiment, although resin was hardened at room temperature, the thermosetting resin is employ | adopted for resin and the resin with which the opening part of the frame part was filled may be heated and hardened. .

また、上述の実施形態では、発光ダイオード５を用いたが、発光ダイオードの代わりに他の発光半導体素子や受光半導体素子を用いてもよい。   In the above embodiment, the light emitting diode 5 is used. However, other light emitting semiconductor elements or light receiving semiconductor elements may be used instead of the light emitting diodes.

本発明による光半導体装置の断面図である。It is sectional drawing of the optical semiconductor device by this invention. 本発明による光半導体装置の平面図である。It is a top view of the optical semiconductor device by this invention. 光半導体装置の各製造工程における断面図である。It is sectional drawing in each manufacturing process of an optical semiconductor device. 光半導体装置の各製造工程における断面図である。It is sectional drawing in each manufacturing process of an optical semiconductor device. 光半導体装置の各製造工程における断面図である。It is sectional drawing in each manufacturing process of an optical semiconductor device. 光半導体装置の各製造工程における断面図である。It is sectional drawing in each manufacturing process of an optical semiconductor device.

符号の説明Explanation of symbols

１ 光半導体装置
２ 基板
３ 枠部
３ａ 開口部
５ 発光ダイオード
６ 保護膜
７ 金細線
１１ 型枠
１１ａ 空間

DESCRIPTION OF SYMBOLS 1 Optical semiconductor device 2 Board | substrate 3 Frame part 3a Opening part 5 Light emitting diode 6 Protective film 7 Gold wire 11 Mold frame 11a Space

Claims (5)

基板上に型枠を設置して、前記型枠内に樹脂を充填して硬化させることにより開口部が形成された枠部を基板と一体的になるように樹脂成型する枠部成型工程と、
前記枠部の開口部により露出される基板上に受光又は発光半導体素子を設置する素子設置工程と、
前記枠部の開口部に樹脂を充填した後、前記樹脂の表面が平坦になるように硬化させて保護膜を形成する保護膜形成工程とを備えたことを特徴とする光半導体装置の製造方法。 A frame part molding step in which a mold is placed on a substrate, and a resin is molded so that the frame part in which the opening is formed is integrated with the substrate by filling and curing the resin in the mold;
An element installation step of installing a light receiving or light emitting semiconductor element on the substrate exposed by the opening of the frame part;
And a protective film forming step of forming a protective film by filling the opening of the frame with resin and then curing the resin so that the surface of the resin becomes flat. . 前記保護膜形成工程は、室温で行われることを特徴とする請求項１に記載の光半導体装置の製造方法。   The method for manufacturing an optical semiconductor device according to claim 1, wherein the protective film forming step is performed at room temperature. 前記保護膜形成工程は、大気圧以下の雰囲気中で行われることを特徴とする請求項１または２のいずれか１項に記載の光半導体装置の製造方法。   3. The method of manufacturing an optical semiconductor device according to claim 1, wherein the protective film forming step is performed in an atmosphere at atmospheric pressure or lower. 前記枠部は、黒色の樹脂からなることを特徴とする請求項１〜３のいずれか１項に記載の光半導体装置の製造方法。   The method of manufacturing an optical semiconductor device according to claim 1, wherein the frame portion is made of a black resin. 基板と、
樹脂成型により前記基板に一体的に成型され、開口部が形成された枠部と、
前記枠部の開口部により露出された基板の領域に設けられた受光又は発光半導体素子と、
前記受光又は発光半導体素子を覆うように前記枠部の開口部に表面が平坦になるように形成された保護膜とを備えたことを特徴とする光半導体装置。







A substrate,
A frame part formed integrally with the substrate by resin molding and having an opening formed therein;
A light receiving or light emitting semiconductor element provided in a region of the substrate exposed by the opening of the frame portion;
An optical semiconductor device comprising: a protective film formed to have a flat surface at an opening of the frame so as to cover the light receiving or light emitting semiconductor element.







JP2006200539A 2006-07-24 2006-07-24 Optical semiconductor device, and manufacturing method thereof Withdrawn JP2008028224A (en)

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