JP2008021755A - Organic el device, manufacturing method thereof and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic EL device 1 for which its service life is prolonged by preventing deterioration of light-emitting efficiency due to shift of a metal element in an anode 111 to a hole injection layer 60, and manufacturing method thereof and an electronic apparatus equipped with the organic EL device 1. <P>SOLUTION: The organic EL device having the hole injection layer 60 and the light-emitting layer 70 which are disposed in this order between the anode 111 and a cathode 12. A barrier film 50 made of an organic silicon compound and for preventing the shift of the metal element in the anode 111 to the hole injection layer 60 is provided between the anode 111 and the hole injection layer 60. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an organic EL device, a manufacturing method thereof, and an electronic apparatus.

In recent years, attention has been paid to an organic EL device in which a light emitting material such as an organic fluorescent material is sandwiched between electrodes. In such an organic EL device, a hole injection layer is generally disposed on the anode side of the light emitting layer in order to increase the light emission efficiency of the light emitting layer made of a light emitting material (see, for example, Patent Document 1). ). As the hole injection layer, 3,4-polyethylenedioxythiophene-polystyrene sulfonic acid [PEDOT (Polyethylene Dioxythiophene) -PSS (Polystyrene Sulphonate)] is generally used. Further, as the anode serving as the base of the hole injection layer, a transparent electrode made of ITO (indium tin oxide) is generally used particularly when the anode side is the light emission side.
JP-A-2003-347063

  By the way, PEDOT-PSS used as the hole injection layer is used as a dispersion liquid in which 3,4-polyethylenediosithiophene is dispersed in polystyrene sulfonic acid as a dispersion medium and further dispersed in water. To be served. However, since this dispersion is strongly acidic, when it is applied on an anode made of ITO, the metal element in the anode, particularly In (indium), becomes unstable due to dissolution of the anode surface, etc. Oxidized and eluted into the hole injection layer, or easily diffused to the hole injection layer side. As a result, when the oxide moves into the hole injection layer, the electrical resistance of the hole injection layer increases and the conductivity decreases, and the light emission efficiency in the light emitting layer decreases. In addition, if In diffuses to the hole injection layer side, and part of it diffuses to the light emitting layer, the light emission efficiency in the light emitting layer is also lowered. And since luminous efficiency falls in this way, the luminous performance of the organic EL device obtained will fall and the lifetime will become short.

  The present invention has been made in view of the above circumstances, and the object of the present invention is to prevent a decrease in luminous efficiency due to the migration of the metal element in the anode to the hole injection layer side, thereby extending the life. An object of the present invention is to provide an intended organic EL device, a method for manufacturing the same, and an electronic apparatus including the organic EL device.

  In order to achieve the above object, the organic EL device of the present invention is an organic EL device in which a hole injection layer and a light emitting layer are disposed in this order between an anode and a cathode. Between the two, a barrier film made of an organosilicon compound is provided to prevent the metal element in the anode from moving to the hole injection layer side.

  According to this organic EL device, since the barrier film made of an organosilicon compound is provided between the anode and the hole injection layer, for example, when forming the hole injection layer, the surface of the anode is holed by the barrier film. Dissolving in the dispersion liquid for forming the injection layer is suppressed, thereby suppressing the metal element in the anode from moving to the hole injection layer side. That is, since the barrier film is made of an organosilicon compound and exhibits water repellency (hydrophobicity), the dispersion liquid is prevented from penetrating the barrier film and coming into contact with the anode. It is suppressed that the metal element in it moves to the hole injection layer side by elution etc.

  Therefore, a decrease in light emission efficiency due to the migration of the metal element in the anode to the hole injection layer side is prevented, and a longer life is achieved.

  In the organic EL device, the organosilicon compound is preferably a cyclic siloxane. The cyclic siloxane is preferably a compound having 3 to 6 silicon atoms.

  Cyclic siloxane has high volatility, and especially those having 3 to 6 silicon have a relatively large vapor pressure even at room temperature. Therefore, a thin film having a thickness of about 1 nm or less can be obtained by simply bringing the vapor into contact with the anode. Can be easily formed on the anode surface. Therefore, by forming such a thin barrier film, it is possible to prevent a decrease in luminous efficiency as described above without impairing the mobility of holes from the anode to the hole injection layer.

  The organic EL device manufacturing method of the present invention includes a step of forming the anode in a method of manufacturing an organic EL device in which a hole injection layer and a light emitting layer are disposed in this order between an anode and a cathode. Forming a barrier film made of cyclic siloxane on the anode to bring the cyclic siloxane vapor into contact with the anode surface and preventing the metal element in the anode from moving to the hole injection layer side; And a step of forming a hole injection layer on the barrier film.

  According to this method for manufacturing an organic EL device, cyclic siloxane has high volatility and has a relatively large vapor pressure. Therefore, by simply bringing the vapor into contact with the anode, a thin film having a thickness of about 1 nm or less is formed on the anode surface. Can be easily formed. Therefore, by forming such a thin barrier film, the luminous efficiency can be improved as described above without deteriorating the conductivity extremely, and thus without impairing the mobility of holes from the anode to the hole injection layer. A decrease can be prevented.

  An electronic apparatus according to the present invention includes the organic EL device described above.

  According to this electronic apparatus, since the organic EL device having a long lifetime is provided as described above, the display unit made of the organic EL device also has a long lifetime.

  The present invention will be described in detail below.

(Organic EL device)
1 is an explanatory view showing a wiring structure of an embodiment of the organic EL device of the present invention, FIG. 2 is a schematic plan view of the organic EL device shown in FIG. 1, and FIG. 3 is an organic EL shown in FIG. FIG. 4 is an explanatory diagram for explaining a main configuration of the cross-sectional schematic diagram shown in FIG. 3.

  As shown in FIG. 1, the organic EL device 1 of the present embodiment includes a plurality of scanning lines 101, a plurality of signal lines 102 extending in a direction intersecting the scanning lines 101, and a plurality extending in parallel with the signal lines 102. The power source line 103 is wired, and the pixel region A is formed in the vicinity of each intersection of the scanning line 101 and the signal line 102.

  Connected to the signal line 102 is a data side driving circuit 104 including a shift register, a level shifter, a video line, and an analog switch. A scanning side driving circuit 105 including a shift register and a level shifter is connected to the scanning line 101. In each of the pixel regions A, a switching thin film transistor 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101 and a pixel signal supplied from the signal line 102 via the switching thin film transistor 112 are provided. Is electrically connected to the power supply line 103 via the driving thin film transistor 113, the driving thin film transistor 113 to which the pixel signal held by the holding capacity cap is supplied to the gate electrode, and the driving thin film transistor 113. In addition, an anode (pixel electrode) 111 into which a driving current flows from the power supply line 103 and a light emitting functional layer 110 sandwiched between the pixel electrode 111 and the cathode (counter electrode) 12 are provided.

  The organic EL element is configured by including the anode (pixel electrode) 111, the cathode (counter electrode) 12, and the light emitting functional layer 110.

  According to such a configuration, when the scanning line 101 is driven and the switching thin film transistor 112 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor cap, and according to the state of the holding capacitor cap. The on / off state of the driving thin film transistor 113 is determined. Then, a current flows from the power supply line 103 to the pixel electrode 111 through the channel of the driving thin film transistor 113, and further a current flows to the cathode 12 through the light emitting functional layer 110. Then, the light emitting functional layer 110 emits light according to the amount of current flowing therethrough.

  As shown in FIGS. 2 and 3, the organic EL device 1 according to the present embodiment includes a transparent substrate 2 made of glass or the like and organic EL elements arranged in a matrix. As shown in FIG. 3, the organic EL element 3 formed on the substrate 2 includes a pixel electrode 111, a light emitting functional layer 110 including a hole injection layer 60 and a light emitting layer 70, a cathode 12, and a pixel electrode 111. The barrier film 50 is formed between the hole injection layer 60 and the hole injection layer 60. In the thickness direction of the substrate 2, a circuit element portion 14 is formed between the EL element portion 10 including the organic EL element 3 and the substrate 2. In the circuit element portion 14, the above-described scanning line, signal line, storage capacitor, switching thin film transistor, driving thin film transistor 123, and the like are formed.

  One end of the cathode 12 is connected to a cathode wiring (not shown) formed on the substrate 2, and one end 12 a of this wiring is connected to a wiring 5 a on the flexible substrate 5 as shown in FIG. 2. It is connected to the. The wiring 5 a is connected to a driving IC 6 (driving circuit) provided on the flexible substrate 5.

  In the organic EL device 1 of the present embodiment, light emitted from the light emitting functional layer 110 to the substrate 2 side is transmitted through the circuit element unit 14 and the substrate 2 and emitted to the outside (observer side) of the substrate 2. At the same time, the light emitted from the light emitting functional layer 110 to the side opposite to the substrate 2 is reflected by the cathode 12, passes through the circuit element portion 14 and the substrate 2, and is emitted to the outside (observer side) of the substrate 2. The so-called bottom emission type.

As shown in FIG. 3, in the circuit element portion 14, a base protective layer 281 mainly composed of SiO ₂ is formed on the substrate 2 as a base, and a silicon layer 241 is formed thereon. A gate insulating layer 282 mainly composed of SiO ₂ and / or SiN is formed on the surface of the silicon layer 241.

In the silicon layer 241, a region overlapping with the gate electrode 242 with the gate insulating layer 282 interposed therebetween is a channel region 241a. The gate electrode 242 is a part of a scanning line (not shown). On the other hand, a first interlayer insulating layer 283 mainly composed of SiO ₂ is formed on the surface of the gate insulating layer 282 that covers the silicon layer 241 and on which the gate electrode 242 is formed.

  Further, in the silicon layer 241, a low concentration source region 241b and a high concentration source region 241S are provided on the source side of the channel region 241a, while a low concentration drain region 241c and a high concentration drain are provided on the drain side of the channel region 241a. The region 241D is provided to form a so-called LDD (Light Doped Drain) structure. Among these, the high-concentration source region 241S is connected to the source electrode 243 through a contact hole 243a that opens over the gate insulating layer 282 and the first interlayer insulating layer 283. The source electrode 243 is configured as a part of a power supply line (not shown). On the other hand, the high-concentration drain region 241D is connected to the drain electrode 244 made of the same layer as the source electrode 243 through a contact hole 244a opened through the gate insulating layer 282 and the first interlayer insulating layer 283.

  A planarization film 284 is formed on the first interlayer insulating layer 283 where the source electrode 243 and the drain electrode 244 are formed. The planarizing film 284 is formed of a heat-resistant insulating resin such as acrylic or polyimide, and is formed to eliminate surface irregularities due to the driving TFT 123, the source electrode 243, the drain electrode 244, and the like. Are known.

  A pixel electrode (anode) 111 is formed on the surface of the planarization film 284, and the pixel electrode 111 is connected to the drain electrode 244 through a contact hole 111 a provided in the planarization film 284. Has been. That is, the pixel electrode 111 is connected to the high concentration drain region 241D of the silicon layer 241 through the drain electrode 244.

Further, on the surface of the planarization film 284 on which the pixel electrode 111 is formed, the pixel electrode 111 and the inorganic partition wall 25 that covers the peripheral portion of the pixel electrode 111 are formed, and the inorganic partition wall 25 and the inorganic partition wall 25 are covered therewith. On the exposed surface of the pixel electrode 111, a barrier film 50 made of an organosilicon compound is formed. Furthermore, an organic partition wall 221 is formed on the inorganic partition wall 25 with a barrier film 50 interposed therebetween. Here, the inorganic partition wall 25 is made of SiO ₂ , and the organic partition wall 221 is made of a heat-resistant insulating resin such as acrylic or polyimide.

  Then, on the pixel electrode 111, the above-described hole injection is performed through the barrier film 50 inside the opening 25a formed in the inorganic partition wall 25 and the opening 221a formed in the organic partition wall 221, that is, the pixel region. The layer 60 and the light emitting layer 70 are laminated in this order from the pixel electrode (anode) 111 side, whereby the light emitting functional layer 110 is formed.

  In the present embodiment, which is a bottom emission type, the pixel electrode 111 is formed of a transparent conductive material, and specifically, ITO is suitably used.

  As described above, the barrier film 50 is formed at a position of the pixel electrode 111 exposed in the pixel region. As shown in FIG. 4, the barrier film 50 is formed on the surface of the pixel electrode 111 so as to have a film thickness of about 1 nm or less (0.3 nm or more). Organic silicon such as cyclic siloxane or polysiloxane is used. It consists of a compound. Such an organic silicon compound exhibits water repellency (hydrophobicity) when the hole injection layer 60 is formed as described later, so that the formation material of the hole injection layer 60 comes into contact with the pixel electrode 111. It will suppress the elution of this.

In this embodiment, a cyclic siloxane is particularly preferably used as the organosilicon compound, and among these, a compound having 3 to 6 silicon atoms is more preferably used. Here, the cyclic siloxane is formed, for example, by winding [— (CH ₃ ) ₂ SiO—] units in a ring shape. As such a cyclic siloxane, hexamethylcyclotrisiloxane, which is a trimer of the above unit (having 3 silicon atoms), is preferably used.

  Cyclic siloxanes have high volatility, and especially those having a low molecular weight of 3 to 6 silicon have a relatively large vapor pressure even at room temperature. Therefore, when the barrier film 50 is formed using this as will be described later, the vapor is simply brought into contact with the pixel electrode 111 and kept in that state for a predetermined period of time, that is, the thin film made of cyclic siloxane, that is, the barrier film 50. Can be easily formed. As described above, the barrier film 50 formed as a thin film having a thickness of about 1 nm or less is formed by the light emitting functional layer 110 without impairing the mobility of holes from the pixel electrode (anode) 111 to the hole injection layer 60. It is possible to prevent a decrease in luminous efficiency.

The hole injection layer 60 formed on such a barrier film 50 is used as a forming material, particularly as a dispersion of 3,4-polyethylenedioxythiophene-polystyrene sulfonic acid (PEDOT-PSS), that is, as a dispersion medium. A dispersion in which 3,4-polyethylenedioxythiophene is dispersed in polystyrene sulfonic acid and further dispersed in water is preferably used. This dispersion of PEDOT-PSS is strongly acidic. Therefore, conventionally, as described above, the surface of the pixel electrode 111 is dissolved, and the metal element (especially In) in the pixel electrode 111 is eluted into the dispersion. As a result, the metal element (In) or its oxide (In ₂ O ₃ ) has been transferred (diffused) into the hole injection layer 60 formed as a result.

  Therefore, in the present invention, as described above, the barrier film 50 is formed on the pixel electrode 111 exposed in the opening 25a of the inorganic partition wall 25, and the metal element in the pixel electrode 111 is formed particularly when the hole injection layer 60 is formed. This prevents inconvenience that (or its oxide) migrates (diffuses) to the hole injection layer 60 side.

  On the hole injection layer 60, a light emitting layer 70 is formed as shown in FIG. As a material for forming the light emitting layer 70, a known light emitting material capable of emitting fluorescence or phosphorescence is used. Specific examples of the material for forming the light emitting layer 70 include (poly) fluorene derivative (PF), (poly) paraphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenylene derivative (PPP), and polyvinylcarbazole (PVK). ), Polythiophene derivatives, and polysilanes such as polymethylphenylsilane (PMPS) are preferably used. In addition, these polymer materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, and quinacridone. It can also be used by doping a low molecular weight material such as.

  In addition, as a material for forming such a light emitting layer 70, in particular, in the case of full color display, a material that emits light corresponding to each of the red, green, and blue wavelength ranges is used, and each of the materials is set in advance. Is formed and arranged.

  The cathode 12 is formed so as to cover the light emitting layer 70. For example, Ca is formed with a thickness of about 5 nm, and Al is formed thereon with a thickness of about 300 nm. Since the electrode has such a laminated structure, particularly Al functions as a reflective layer. If a transparent material is used for the cathode 12 as well, the emitted light can be emitted from the cathode side. As the transparent material, ITO, Pt, Ir, Ni, or Pd can be used. The film thickness is preferably about 75 nm in order to ensure transparency, and more preferably thinner than this film thickness.

  Further, a sealing substrate (not shown) is stuck on the cathode 12 via an adhesive layer 51.

  In the light emitting functional layer 110, the hole injection layer 60 has a function of injecting holes into the light emitting layer 70 and also has a function of transporting holes inside the hole injection layer 60. By providing such a hole injection layer 60 between the barrier film 50 on the pixel electrode 111 and the light emitting layer 70, it is possible to improve element characteristics such as light emission efficiency and life of the light emitting layer 70. In the light emitting layer 70, the holes injected from the hole injection layer 60 and the electrons injected from the cathode 12 are recombined to emit light.

(Method for manufacturing organic EL device)
In order to manufacture the organic EL device 1 having such a configuration, the circuit element portion 14 is formed on the substrate 2 in the same manner as in the prior art. And the transparent conductive film used as the pixel electrode 111 is formed with ITO so that the whole surface of the board | substrate 2 may be covered. Next, the conductive film is patterned to form a pixel electrode 111 that is electrically connected to the drain electrode 244 through the contact hole 111a of the planarization film 284 as shown in FIG.

Next, an inorganic insulating material such as SiO ₂ is formed on the pixel electrode 111 and the planarizing film 284 by a CVD method or the like to form a partition layer (not shown). Subsequently, a known photolithography technique, The partition layer is patterned using an etching technique. Thereby, as shown in FIG. 5B, an opening 25a (not shown) is formed for each pixel region of each organic EL element 3 to be formed, and at the same time, an inorganic partition wall 25 is formed.

  Next, the surface on which the pixel electrode 111 and the inorganic partition wall 25 are thus formed is subjected to oxygen plasma treatment to remove contaminants such as organic substances adhering to the surface, thereby improving wettability.

  Next, the substrate 2 having improved wettability on the pixel electrode 111 side in this manner is placed in a sealed box in which a cyclic siloxane compound is previously placed. As the cyclic siloxane compound, for example, hexamethylcyclosiloxane described above is used, and specifically, LS-8120 manufactured by Shin-Etsu Silicone Co., Ltd. is used. This cyclic siloxane compound is put in a container and left in a sealed box in advance. Then, since this cyclic siloxane compound (hexamethylcyclosiloxane) has high volatility, it is easily vaporized, and the vapor concentration of the cyclic siloxane compound is maintained relatively in the sealed box. When it is desired to increase the vapor concentration, the vapor concentration can be easily adjusted by heating the inside of the sealed box with a heater or the like.

  In this way, the substrate 2 is placed in a sealed box filled with the cyclic siloxane compound vapor, and is allowed to stand, for example, for about 1 hour, thereby bringing the exposed surface of the pixel electrode 111 into contact with the cyclic siloxane compound vapor. . Then, since the wettability of the exposed surface of the pixel electrode 111 is improved by the oxygen plasma treatment, the vapor is easily attached only by contacting with the vapor, as shown in FIG. On the exposed surface and the surface of the inorganic partition wall 25, a very thin film made of a cyclic siloxane film of about 1 nm or less, that is, a barrier film 50 is formed. The barrier film 50 thus obtained has good water repellency (hydrophobicity), and therefore has a property of blocking water-based liquids without penetrating even though it is very thin.

  Next, as shown in FIG. 6A, an organic partition 221 is formed with a resin or the like at a predetermined position of the inorganic partition 25, specifically, a position surrounding the pixel region.

  Subsequently, a hole injection layer 60 is formed in a region surrounded by the organic barrier 221. In the step of forming the hole injection layer 60, a spin coating method or a droplet discharge method is employed. In this embodiment, a material for forming the hole injection layer 60 is selectively used in a region surrounded by the organic partition 221. In particular, an inkjet method that is a droplet discharge method is preferably employed. By this inkjet method, a dispersion of PEDOT-PSS, which is a material for forming the hole injection layer 60, is disposed on the exposed surface of the pixel electrode 111 through the barrier film 50, and then heat treatment (drying treatment) is performed. Thereby, the hole injection layer 60 having a thickness of 50 nm is formed. In addition, as a dispersion of PEDOT-PSS, for example, PEDOT: PSS is 1:10 (weight ratio), the solid content concentration is 0.5% by weight, diethylene glycol is 50% by weight, and the remaining amount is pure water. Used.

When the PEDOT-PSS dispersion liquid is thus disposed on the barrier film 50 on the pixel electrode 111, the barrier film 50 has good water repellency (hydrophobicity) as described above, and thus the dispersion liquid. Since (the forming material of the hole injection layer 60) is cut off without penetrating the pixel electrode 111 side, the dispersion liquid comes into contact with the pixel electrode 111 and dissolves it to dissolve the metal element (In) or the The elution of oxide (In ₂ O ₃ ) is prevented.

  In addition, after the formation process of this hole injection layer 60, it is preferable to carry out in inert gas atmospheres, such as nitrogen atmosphere and argon atmosphere, in order to prevent oxidation and moisture absorption of various formation materials and the formed element.

  Next, as shown in FIG. 6B, a light emitting layer 70 is formed on the hole injection layer 60. In the formation process of the light emitting layer 70, as in the formation of the hole injection layer 60, an ink jet method which is a droplet discharge method is preferably employed. That is, the material for forming the light emitting layer is ejected onto the hole injection layer 60 by an inkjet method, and then heat treatment is performed at 100 ° C. for about 1 hour in a nitrogen atmosphere, and the openings 221a formed in the organic partition 221 That is, the light emitting layer 70 is formed on the pixel region. As the solvent used in the material for forming the light emitting layer, a solvent that does not re-dissolve the hole injection layer 60, such as xylene, is preferably used. As for the formation method of the light emitting layer 70, in particular, when the pixel region is not partitioned by the inorganic partition wall 25 or the organic partition wall 221, the spin coating method can be adopted as in the case of forming the hole injection layer 60. .

  Next, as shown in FIG. 6C, the cathode 12 is formed by stacking, for example, calcium with a thickness of about 5 nm and aluminum with a thickness of about 300 nm so as to cover the light emitting layer 70 and the organic partition 221. In forming the cathode 12, for example, lithium fluoride may be formed on the light emitting layer 70 side as an electron injection layer in order to cause the organic EL element 3 to emit light efficiently. In the formation of the cathode 12, unlike the formation of the hole injection layer 60 and the light emitting layer 70, the cathode 12 is not selectively formed only in the pixel region by the vapor deposition method or the sputtering method. The cathode 12 is formed on almost the entire surface.

  Thereafter, an adhesive layer 51 is formed on the cathode 12, and a sealing substrate (not shown) is further adhered by the adhesive layer 51 to perform sealing. Thereby, the organic EL device 1 of the present embodiment is obtained.

According to such an organic EL device 1, since the barrier film 50 is provided between the pixel electrode 111 and the hole injection layer 60, when forming the hole injection layer 60, hole injection that is strongly acidic is performed. The barrier film 50 prevents the surface of the pixel electrode 111 from being dissolved by the forming material of the layer 60. That is, since the barrier film 50 is made of an organic silicon compound such as a cyclic siloxane compound, it exhibits water repellency (hydrophobicity) to prevent the forming material (dispersion) from penetrating the barrier film 50. As a result, the forming material penetrates into and contacts the pixel electrode 111 which is the base, and the metal element (In) and its oxide (In ₂ O ₃ ) in the pixel electrode 111 are eluted. Can be prevented. Accordingly, it is possible to prevent the metal element (In) and its oxide (In ₂ O ₃ ) in the pixel electrode 111 from moving to the hole injection layer 60 side. A reduction in luminous efficiency is prevented, and a longer life is achieved.

  In addition, according to the method for manufacturing the organic EL device 1, the cyclic siloxane is particularly volatile and has a relatively large vapor pressure. Therefore, by simply bringing the vapor into contact with the pixel electrode 111, the thickness is 1 nm or less. A thin barrier film 50 can be easily formed on the surface of the pixel electrode 111. Therefore, by forming the thin barrier film 50 as described above, the conductivity is not extremely decreased, and thus the mobility of holes from the pixel electrode 111 to the hole injection layer is not impaired as described above. It is possible to prevent a decrease in luminous efficiency and extend the life.

(Experimental example)
A spin coating method was used as a method for forming the hole injection layer 60, and a green fluorescent material was used as a material for forming the light emitting layer 70, and this was formed by a spin coating method. Except for this, an organic EL device as a product of the present invention comprising a panel having a diagonal of 2 inches was fabricated in substantially the same manner as in the manufacturing method described above.

Further, as a comparative product 1, instead of forming the barrier film 50, an ultraviolet irradiation treatment is performed in the same manner as in the above-mentioned Patent Document 1 (Japanese Patent Laid-Open No. 2003-347063), and the surface layer of the pixel electrode 111 (ITO) An In ₂ O ₃ film was formed on the part. Other than this, in the same manner as the organic EL device as the product of the present invention described above, an organic EL device composed of a panel with a diagonal of 2 inches as a comparative product 1 was produced.

  Further, as the comparative product 2, the barrier film 50 is not formed, and other than this, like the organic EL device as the product of the present invention described above, the organic EL composed of a panel with a diagonal of 2 inches is used as the comparative product 2. A device was made.

  Each of the organic EL devices thus fabricated was allowed to emit light and the light emission characteristics were examined. As a result, the organic EL device of the present invention had a luminance emission life of 5 by constant current emission as compared with the organic EL device of Comparative Product 2. It has been confirmed that it has improved by about 20%.

Further, the organic EL device of the present invention emitted light uniformly at any location in the panel having a diagonal of 2 inches, and the deterioration against constant current conduction was uniform, but the organic EL device of comparative product 1 In the initial state, light emission unevenness occurred, and deterioration with respect to constant current application was not uniform. This is considered to be caused by the non-uniform thickness of the In ₂ O ₃ film.

(Electronics)
Next, a specific example of an electronic apparatus provided with the organic EL device 1 of the present embodiment will be described.

  FIG. 7A is a perspective view showing an example of a mobile phone. In FIG. 7A, reference numeral 1000 indicates a mobile phone body, and reference numeral 1001 indicates a display unit including the organic EL device 1.

  FIG. 7B is a perspective view showing an example of a wristwatch type electronic device. In FIG. 7B, reference numeral 1100 indicates a watch body, and reference numeral 1101 indicates a display unit including the organic EL device 1.

  FIG. 7C is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 7C, reference numeral 1200 denotes an information processing apparatus, reference numeral 1202 denotes an input unit such as a keyboard, reference numeral 1204 denotes an information processing apparatus body, and reference numeral 1206 denotes a display unit including the organic EL device 1.

  FIG. 7D is a perspective view showing an example of a thin large-screen television. In FIG. 7D, a thin large-screen TV 1300 includes a thin large-screen TV main body (housing) 1302, an audio output unit 1304 such as a speaker, and a display unit 1306 including the organic EL device 1.

  Since the electronic devices 1000, 1100, 1200, and 1300 shown in FIGS. 7A to 7D include the organic EL device 1, the display units 1001, 1101, 1206, and 1306 of the organic EL device 1 are included. Since the reduction in luminous efficiency is prevented and the lifetime is extended, the display units 1001, 1101, 1206, and 1306 also have extended lifetimes in the electronic devices 1000, 1100, 1200, and 1300 themselves.

  In addition, this invention is not restricted to the said embodiment, In the range which does not deviate from the summary of this invention, it can change suitably.

  For example, in the above-described embodiment, an example in which a cyclic siloxane compound is used as the barrier film 50 has been described, but the barrier film 50 may be formed using another organic silicate compound such as a polysiloxane compound.

  In the above embodiment, an example in which the present invention is applied to a so-called bottom emission type organic EL device that emits light emitted from the light emitting layer 70 from the substrate 2 side is shown. The present invention can also be applied to a so-called top emission type organic EL device that emits light from the stop substrate side.

It is explanatory drawing which shows the wiring structure of the organic electroluminescent apparatus of embodiment. FIG. 2 is a schematic plan view of the organic EL device in FIG. 1. It is a principal part cross-sectional schematic diagram of the organic electroluminescent apparatus of FIG. It is explanatory drawing for demonstrating the principal part structure of the cross-sectional schematic diagram shown in FIG. (A)-(c) is process drawing explaining the manufacturing method of the organic electroluminescent apparatus of FIG. (A)-(c) is process drawing explaining the manufacturing method following FIG. (A)-(d) is a perspective view which shows embodiment of the electronic device of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Organic EL device, 2 ... Substrate, 12 ... Cathode, 50 ... Barrier film, 60 ... Hole injection layer, 70 ... Light emitting layer, 110 ... Light emitting functional layer, 111 ... Pixel electrode (anode)

Claims (5)

In an organic EL device in which a hole injection layer and a light emitting layer are arranged in this order between an anode and a cathode,
A barrier film made of an organosilicon compound is provided between the anode and the hole injection layer to prevent the metal element in the anode from moving to the hole injection layer side. Organic EL device.   2. The organic EL device according to claim 1, wherein the organosilicon compound is a cyclic siloxane.   3. The organic EL device according to claim 2, wherein the cyclic siloxane is a compound having 3 to 6 silicon atoms. In the method of manufacturing an organic EL device in which a hole injection layer and a light emitting layer are disposed in this order between an anode and a cathode,
Forming the anode;
Forming a barrier film made of cyclic siloxane on the anode to bring the cyclic siloxane vapor into contact with the anode surface and preventing the metal element in the anode from moving to the hole injection layer side;
And a step of forming a hole injection layer on the barrier film. An electronic apparatus comprising the organic EL device according to claim 1.

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