JP2007335530A - Semiconductor module and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor module and a semiconductor device having improved cooling performance. <P>SOLUTION: The semiconductor device has a case 61 for allowing a cooling medium to flow; and a plurality of semiconductor modules 1-3. The semiconductor modules 1-3 include at least one semiconductor element sealed with resin. The plurality of semiconductor modules 1-3 are arranged in the case 61. The plurality of semiconductor modules 1-3 are arranged at nearly the same positions to the flow direction of a cooling medium shown by an arrow 111 discharged from a discharge pipe 62a supplied from a supply pipe 61a. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor module and a semiconductor device.

  A semiconductor device including a semiconductor element such as a thyristor or a power transistor generates heat while being driven. When the temperature of the semiconductor device rises, the performance of the semiconductor device may be affected, or the semiconductor device itself may be damaged. Or, it may adversely affect parts and devices arranged around the semiconductor device. For this reason, some semiconductor devices that generate heat include a cooler.

  For example, an inverter that converts direct current electricity into alternating current electricity is used as a drive source for an electric vehicle such as a hybrid vehicle or a fuel cell vehicle, an elevator, or a train. Such an inverter converts, for example, direct current electricity into three-phase alternating current and supplies electricity to a motor serving as a driving device.

  Japanese Patent Laid-Open No. 2005-85998 discloses a cooling device for an electronic component that includes a distribution pipe that distributes cooling water to flat fin tubes, a plurality of flat tubes, and a collecting pipe that collects cooling water from the flat tubes. ing. Between the flat tubes, a semiconductor module for double-sided cooling, which is an object to be cooled, and a corrugated fin are included. It is disclosed that the flat fin tube and the corrugated fin have an elastic force for bringing the flat fin tube into close contact with the double-sided cooling semiconductor module and an elastic force for bringing the flat tube into close contact with the corrugated fin. According to this cooling device, it is disclosed that a cooling device for an electronic component having a simple device configuration and excellent heat dissipation efficiency can be provided.

Japanese Patent Laying-Open No. 2005-228976 discloses a semiconductor device in which semiconductor modules in which a semiconductor element part and a cooler are integrally formed by a resin mode are stacked. A semiconductor module assembly including the stacked semiconductor modules is inserted and fixed in the housing. The cooling medium tanks are respectively connected to the housing so as to sandwich the semiconductor module assembly from both sides. In this semiconductor device, it is disclosed that a semiconductor device having excellent earthquake resistance can be provided.
JP 2005-85998 A JP 2005-228976 A

  A conventional semiconductor device includes a substrate, and a plurality of semiconductor elements are arranged on the surface of the substrate. For example, when the semiconductor device is an inverter, a plurality of transistors, a plurality of diodes, and the like are arranged on the surface of one substrate. This substrate is placed on the surface of the cooler. Since the semiconductor element is disposed on one surface of the substrate, the other surface of the substrate is bonded to the cooler.

  In the cooler, for example, a cooling medium is caused to flow along the surface of the substrate on which the semiconductor element is disposed. Although the cooling medium temperature is low on the upstream side of the cooling medium, the cooling medium has a large cooling effect. However, since the cooling medium temperature increases toward the downstream side, the cooling capacity is deteriorated. For this reason, distribution (unevenness) occurs in cooling depending on the position of the semiconductor element arranged on the surface of the substrate.

  In the case where a substrate including a semiconductor element is disposed on the surface of the cooler, it is necessary to dispose an insulating member such as ceramic between the cooler and the substrate including the semiconductor element. For this reason, the distance between the semiconductor element and the cooler is long, and there is room for improvement in cooling efficiency. Further, the heat resistance when heat is transferred from the semiconductor element to the cooler is large, and there is room for improvement.

  When fins for heat dissipation are formed in the cooler, the substrate is disposed on one surface of the front and back surfaces of the cooler, and the fin is formed on the other surface. In this case, the distance between the fin that performs heat dissipation and the semiconductor element is increased, and the thermal resistance is increased.

  Further, in a semiconductor device in which a plurality of semiconductor elements are arranged on the surface of a substrate, the distance from the input end of the semiconductor device to the semiconductor element and the shape of the electric circuit are different. The parasitic inductance generated in the electric circuit is generated depending on the shape and length of the electric circuit. For this reason, the parasitic inductance that affects the output of the semiconductor element may be different for each semiconductor element. As a result, the output characteristics of the semiconductor device may be adversely affected.

  An object of this invention is to provide the semiconductor module and semiconductor device which were excellent in cooling performance. It is another object of the present invention to provide a semiconductor module and a semiconductor device with a small parasitic inductance.

  A semiconductor device according to the present invention includes a cooling passage for flowing a cooling medium and a plurality of semiconductor modules. The semiconductor module includes at least one semiconductor element sealed with resin. The plurality of semiconductor modules are arranged in the cooling passage. The plurality of semiconductor modules are arranged at substantially the same position with respect to the flow direction of the cooling medium.

  Preferably, in the above invention, the cooling medium having insulating properties is formed to flow.

  In the present invention, preferably, the semiconductor module includes a cooling fin formed so as to come into contact with the cooling medium.

  Preferably, in the above invention, the plurality of semiconductor modules include three semiconductor modules for forming electricity of each phase of three-phase alternating current from direct current electricity.

  Preferably, in the above invention, the plurality of semiconductor modules are arranged substantially uniformly in a cross section when cut by a plane perpendicular to the flow direction of the cooling medium.

  A semiconductor device according to the present invention includes a plurality of semiconductor modules. The semiconductor module includes at least one semiconductor element. The semiconductor module is formed to extend in one direction. The plurality of semiconductor modules are arranged such that the one direction is substantially parallel to each other. The plurality of semiconductor modules are arranged radially when viewed from one side in the one direction. The plurality of semiconductor modules are arranged substantially evenly along the circumferential direction when viewed from one side in the one direction.

  Preferably, in the above invention, the plurality of semiconductor elements arranged in each of the plurality of semiconductor modules are arranged at substantially the same position with respect to the one direction.

  Preferably, in the above invention, the plurality of semiconductor modules include three semiconductor modules for forming three-phase alternating current electricity from direct current electricity.

  Preferably in the said invention, a case is provided. The plurality of semiconductor modules are arranged inside the case. The case is formed so that it can be attached to a portion where the input terminal of the drive device is formed.

  Preferably in the said invention, a case is provided. The plurality of semiconductor modules are arranged inside the case. The case has a cooling medium inlet and outlet. The inlet portion and the outlet portion are formed such that the flow direction of the cooling medium and the one direction of the semiconductor module are substantially parallel.

  The semiconductor module based on this invention is equipped with the 1st plate-shaped member. A second plate-like member disposed to face the first plate-like member; A third plate member disposed between the first plate member and the second plate member; A first semiconductor element disposed between the first plate member and the third plate member; A second semiconductor element disposed between the second plate member and the third plate member; The first plate-like member, the second plate-like member, and the third plate-like member are arranged so that their main surfaces are substantially parallel to each other. Each of the first plate-like member, the second plate-like member, and the third plate-like member has conductivity. The first semiconductor element and the second semiconductor element are arranged so as to face each other with the third plate member interposed therebetween.

  Preferably in the said invention, a cooling fin is provided. The cooling fin is joined to at least one of the first plate member and the second plate member.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor module and semiconductor device which were excellent in cooling performance can be provided. In addition, a semiconductor module and a semiconductor device with small parasitic inductance can be provided.

(Embodiment 1)
A semiconductor module and a semiconductor device according to the first embodiment of the present invention will be described with reference to FIGS. The semiconductor device in this embodiment is an inverter for converting direct current electricity into three-phase alternating current electricity. The inverter in the present embodiment is an inverter for supplying electricity to a motor as a drive device.

  FIG. 1 shows a schematic perspective view of a semiconductor device and a motor in the present embodiment. The semiconductor device in the present embodiment includes a plurality of semiconductor modules 1 to 3. The semiconductor device includes a semiconductor module 1 as a first semiconductor module, a semiconductor module 2 as a second semiconductor module, and a semiconductor module 3 as a third semiconductor module.

  The semiconductor module 1 is a semiconductor module for forming three-phase alternating current U-phase electricity from direct-current electricity. The semiconductor module 2 is a semiconductor module for forming three-phase alternating current V-phase electricity from direct current electricity. The semiconductor module 3 is a semiconductor module for forming three-phase AC W-phase electricity from DC electricity. Each of the semiconductor modules 1 to 3 includes at least one semiconductor element.

  Each of the plurality of semiconductor modules 1 to 3 is formed in a planar manner. The plurality of semiconductor modules 1 to 3 have a longitudinal direction. Each of the semiconductor modules 1 to 3 has one direction in which an arrow 112 extends. One extending direction in the present embodiment is the longitudinal direction of the semiconductor module. The plurality of semiconductor modules 1 to 3 are arranged such that one extending direction is substantially parallel to each other. One direction in which the semiconductor module extends is not limited to the longitudinal direction, and may be, for example, a direction perpendicular to the longitudinal direction.

  The semiconductor device in the present embodiment includes a case 61. Case 61 in the present embodiment is formed in a cylindrical shape. A cavity is formed inside the case 61. The inside of the case 61 becomes a cooling passage for flowing a cooling medium. The semiconductor modules 1 to 3 are arranged inside the case 61. The semiconductor modules 1 to 3 are arranged in the cooling passage.

  Case 61 includes a supply pipe 61a for supplying a cooling medium. Case 61 includes a discharge pipe 61b for discharging the cooling medium. The supply pipe 61 a as the inlet of the cooling passage is disposed on the cylindrical end surface of the case 61. A discharge pipe 61 b as an outlet portion of the cooling passage is connected to a cylindrical side surface of the case 61. In the case 61, the direction indicated by the arrow 111 is the flow direction of the cooling medium.

  The semiconductor modules 1 to 3 in the present embodiment are arranged so that the flow direction of the cooling medium indicated by the arrow 111 and the one direction in which the semiconductor module 1 extends indicated by the arrow 112 are substantially parallel. The semiconductor modules 1 to 3 are arranged along the flow direction of the cooling medium indicated by the arrow 111.

  The semiconductor device according to the present embodiment includes a power supply side input terminal 41a and a ground side input terminal 41b as DC electric input terminals. The power supply side input terminal 41a and the ground side input terminal 41b are formed in a flat plate shape. The power supply side input terminal 41a and the ground side input terminal 41b are arranged so that their principal surfaces are parallel to each other. That is, in the present embodiment, the input terminal is formed in the form of a parallel plate.

  Case 61 in the present embodiment is attached to a portion where input terminal of motor 81 is formed. The case 61 is formed in a cylindrical shape. In motor 81 in the present embodiment, an input terminal is formed on the end surface opposite to the end surface on which shaft 81a is disposed. The motor 81 has an input terminal formed on the front end surface. The case 61 is attached to the front end surface of the motor 81. A capacitor 82 is disposed on the front end surface of the case 61.

  FIG. 2 shows a block diagram of electrical connection of the inverter, the battery, and the motor in the present embodiment. A semiconductor module 1 for forming a three-phase alternating current U phase from direct current electricity includes power transistors Q1 and Q2 and diodes D1 and D2. A semiconductor module 2 for forming a three-phase alternating current V phase from direct current electricity includes power transistors Q3 and Q4 and diodes D3 and D4. Semiconductor module 3 for forming a three-phase alternating current W phase from direct current electricity includes power transistors Q5 and Q6 and diodes D5 and D6.

  Between the collectors and emitters of the power transistors Q1 to Q6, diodes D1 to D6 are connected to flow current from the emitter side to the collector side, respectively. The U-phase output bus bar 12, the V-phase output bus bar 22, and the W-phase output bus bar 32 are respectively connected to the coil ends on the opposite side of the neutral point of the U-phase, V-phase, or W-phase coils of the motor 81. ing.

  The positive electrode of battery B is connected to power supply line PL, and the negative electrode of battery B is connected to ground line SL. Capacitor 82 is connected in parallel to battery B between power supply line PL and ground line SL. The power supply line PL is connected to the power supply side input terminal 41a of the inverter. The ground line SL is connected to the ground side input terminal 41b of the inverter.

  When the semiconductor device according to the present invention is mounted on, for example, an electric vehicle, motor 81 is connected to the driving wheels of the vehicle. Further, at the time of regenerative braking, the motor 81 performs regenerative power generation by obtaining the rotational force from the drive wheels.

  The battery B is a direct current power source. Battery B generates a DC voltage and supplies electricity to power supply line PL. The battery B includes, for example, a secondary battery such as a nickel metal hydride battery or a lithium ion battery, and a fuel cell. Capacitor 82 smoothes voltage fluctuation between power supply line PL and ground line SL.

  The inverter in the present embodiment includes a voltage sensor and a current sensor for detecting the voltage between power supply line PL and ground line SL and the motor current of motor 81 (not shown). The inverter converts the DC voltage supplied from the power supply line PL into a three-phase AC voltage based on the signal PWM from the control device 51 and supplies electricity to the motor 81.

  FIG. 3 shows a schematic perspective view of the semiconductor module in the present embodiment. FIG. 3 is a schematic perspective view of the first semiconductor module in the present embodiment. The second semiconductor module and the third semiconductor module have substantially the same configuration as the first semiconductor module.

  The semiconductor module 1 as the first semiconductor module includes a power bus bar 11a as a first plate member. The semiconductor module 1 includes a ground bus bar 11b as a second plate member. Each of the power bus bar 11a and the ground bus bar 11b is formed in a plate shape. The power bus bar 11a and the ground bus bar 11b are arranged so that the main surfaces face each other. The power bus bar 11a and the ground bus bar 11b are formed so that their principal surfaces are substantially parallel to each other. The power bus bar 11a and the ground bus bar 11b are formed to be parallel plate electrodes. Between the power bus bar 11a and the ground bus bar 11b, a U-phase output bus bar 12 as a third plate member is disposed. The U-phase output bus bar 12 is formed in a plate shape.

  In the present embodiment, power supply bus bar 11a, ground bus bar 11b and U-phase output bus bar 12 are formed of a conductive material. The power supply bus bar 11 a and the ground bus bar 11 b have a function of an input terminal of the semiconductor module 1. Further, the U-phase output bus bar 12 has a function of an output terminal of the semiconductor module 1.

  Fins 13 are joined to the outer main surface of the power bus bar 11a. The fin 13 is formed in a plate shape. The fin 13 is formed so as to protrude outward. The fins 13 are formed so as to stand up from the main surface of the power bus bar 11a. Fins 13 are arranged on the main surface outside the ground bus bar 11b. The fins 13 joined to the ground bus bar 11b have the same configuration as the fins 13 joined to the main surface of the power bus bar 11a.

  FIG. 4 is a schematic cross-sectional view of the first semiconductor module in the present embodiment. 4 is a cross-sectional view taken along the line IV-IV in FIG. The U-phase output bus bar 12 is arranged in a region sandwiched between the power bus bar 11a and the ground bus bar 11b. The U-phase output bus bar 12 and the power bus bar 11a and the ground bus bar 11b are arranged so that their main surfaces are substantially parallel to each other.

  A power transistor Q1 as a first semiconductor element is disposed between the power supply bus bar 11a and the U-phase output bus bar 12. Between the ground bus bar 11b and the U-phase output bus bar 12, a power transistor Q2 as a second semiconductor element is arranged.

  Semiconductor module 1 in the present embodiment is formed so that the plane passing through the center in the thickness direction of U-phase output bus bar 12 is a symmetric plane, and power bus bar 11a side and ground bus bar 11b side are substantially symmetric. Has been.

  FIG. 5 shows a second schematic cross-sectional view of the semiconductor module in the present embodiment. 5 is a cross-sectional view taken along line VV in FIG. A diode D2 is arranged between the ground bus bar 11b and the U-phase output bus bar 12. Similarly, a diode D1 is arranged between the power supply bus bar 11a and the U-phase output bus bar 12.

  The power transistor Q2 and the diode D2 are arranged side by side. Similarly, the power transistor Q1 and the diode D1 are arranged side by side. In this embodiment, a power transistor and a diode corresponding to the power transistor are arranged side by side and are electrically connected in parallel by being sandwiched between an input-side bus bar and an output-side bus bar. Yes.

  Each of the power transistors Q1 and Q2 is disposed at substantially the same position with respect to one direction in which the semiconductor module 1 extends as indicated by an arrow 112. Power transistors Q1 and Q2 are arranged in substantially the same region on the front and back main surfaces of U-phase output bus bar 12, respectively. The power transistor Q1 and the power transistor Q2 are arranged to face each other via the U-phase output bus bar 12. Similarly, the diode D1 and the diode D2 are arranged to face each other via the U-phase output bus bar 12.

  Power transistors Q1, Q2 and diodes D1, D2 are sealed with resin 15. An insulating film having electrical insulation is formed on the surface of each fin 13 joined to the power bus bar 11a and the ground bus bar 11b.

  Referring to FIGS. 1 and 3, the power supply side input terminal 41a is connected to the power supply bus bars 11a, 21a, 31a of the respective semiconductor modules 1-3. The ground side input terminal 41b is connected to the ground bus bars 11b, 21b, 31b of the respective semiconductor modules 1 to 3. In the present embodiment, the power supply side input terminal 41a and the ground side input terminal 41b are connected to the respective semiconductor modules 1 to 3 so that the main surfaces are maintained in a substantially parallel state. That is, in each connection, the input terminal and the bus bar on the input side of the semiconductor module are connected in the form of a parallel plate (not shown).

  Output bus bars such as the U-phase output bus bar 12 of each of the semiconductor modules 1 to 3 are connected to input terminals of the respective phases of the motor 81 (not shown). For example, the U-phase output bus bar 12 of the first semiconductor module 1 is connected to the U-phase input terminal of the motor 81.

  FIG. 6 is a schematic cross-sectional view of the semiconductor device in the present embodiment. 6 is a cross-sectional view taken along the line VI-VI in FIG. FIG. 6 is a schematic cross-sectional view when cut along a plane perpendicular to one extending direction of each semiconductor module. Each of the semiconductor modules 1 to 3 is formed in a plate shape when viewed from one direction, and is formed such that the fins 13, 23, and 33 protrude from the side.

  Referring to FIGS. 1 and 6, in the semiconductor device in the present embodiment, each of semiconductor modules 1 to 3 is arranged radially when viewed from one side of one direction of semiconductor modules 1 to 3. Has been. The plurality of semiconductor modules 1 to 3 are arranged radially when viewed from the upstream side in the flow direction of the cooling medium indicated by the arrow 111.

  The plurality of semiconductor modules 1 to 3 are arranged substantially evenly along the circumferential direction. The plurality of semiconductor modules 1 to 3 are arranged such that each output bus bar is along the radial direction. The plurality of semiconductor modules 1 to 3 are arranged such that their respective symmetry planes are along the radial direction.

  The semiconductor modules 1 to 3 are formed so that the angles formed by the symmetry planes of the plurality of semiconductor modules are substantially the same when viewed from one side in the extending direction. The symmetry plane of the semiconductor module 1 and the symmetry plane of the semiconductor module 2 are arranged to form an angle θ1. The symmetry plane of the semiconductor module 2 and the symmetry plane of the semiconductor module 3 are arranged to form an angle θ2. The symmetry plane of the semiconductor module 3 and the symmetry plane of the semiconductor module 1 are arranged to form an angle θ3. Each angle θ1 to θ3 in the present embodiment is approximately 120 °. The power supply side input terminal 41a and the ground side input terminal 41b are arranged in the central portion when viewed from one side in one direction in which the semiconductor module extends.

  FIG. 7 shows a schematic cross-sectional view of the semiconductor device and the motor in the present embodiment. FIG. 7 is a schematic cross-sectional view taken along a plane parallel to one direction in which the semiconductor module in FIG. 1 extends.

  In the present embodiment, the respective semiconductor modules 1 to 3 are arranged at substantially the same position with respect to the flow direction of the cooling medium indicated by the arrow 111. In the present embodiment, since each of the semiconductor modules 1 to 3 has the same configuration, the end faces of the power bus bars 11a, 21a, and 31a are arranged on one surface when viewed from the side. Is formed.

  In addition, each of the power transistors Q1 to Q6 in the present embodiment is arranged at substantially the same position with respect to the flow direction of the cooling medium indicated by the arrow 111. That is, in the present embodiment, power transistors Q1 to Q6 are arranged on surface 106 perpendicular to the flow direction of the cooling medium indicated by arrow 111.

  Next, effects of the semiconductor module and the semiconductor device in the present embodiment will be described. The semiconductor device in the present embodiment can cool each semiconductor element substantially uniformly. Moreover, the cooling efficiency of each semiconductor element can be improved. Alternatively, the distribution of parasitic inductance that affects each semiconductor device can be reduced. Further, the parasitic inductance can be reduced.

  FIG. 8 shows a schematic plan view of a semiconductor device of a comparative example in the present embodiment. The semiconductor device of the comparative example is an inverter for converting alternating current electricity into direct current electricity. The semiconductor device of the comparative example has a planar structure.

  The semiconductor device of the comparative example includes a substrate 90. Semiconductor elements 93 to 95 are arranged on the surface of the substrate 90. Each of the semiconductor elements 93 to 95 includes a power transistor and a diode. Each of the semiconductor elements 93 to 95 is connected to a power supply line 91 and a ground line 92. The power supply line 91 and the ground line 92 are connected to a battery (not shown).

  The semiconductor element 93 is connected to a U-phase line 96 as an output line. A V-phase line 97 is connected to the semiconductor element 94. A W-phase line 98 is connected to the semiconductor element 95.

  FIG. 9 shows a schematic cross-sectional view of a semiconductor device of a comparative example in the present embodiment. The semiconductor device of the comparative example includes a cooler 100. The substrate 90 is fixed to the cooler 100.

  The cooler 100 includes fins 105. The substrate 90 on which the semiconductor elements 93 to 95 are arranged is fixed to the surface of the cooler 100 opposite to the surface on which the fins 105 are formed. Inside the cooler 100, the cooling medium flows in the direction indicated by the arrow 113. A substrate 90 is fixed to the surface of the cooler 100 via a solder layer 104, a metal plate 103, and a ceramic substrate 102.

  The cooling medium gradually increases in temperature along the traveling direction in order to perform heat exchange. For example, when the respective semiconductor elements 93 to 95 are arranged along the flow direction of the cooling medium indicated by the arrow 113 as in the semiconductor device of the comparative example, the cooling effect of the respective semiconductor elements 93 to 95 is achieved. Is different. That is, the semiconductor element 93 disposed on the upstream side of the cooling medium is sufficiently cooled, and the semiconductor element 95 is poorly cooled. As described above, in the semiconductor device of the comparative example, uneven cooling occurs between the upstream side and the downstream side of the refrigerant.

  As shown in FIG. 9, the substrate 90 on which the semiconductor elements 93 to 95 are arranged is fixed to the cooler 100 via the solder layer 104, the ceramic substrate 102, the metal plate 103, and the like. Since a plurality of members, solder layers, and the like are disposed between the cooler 100 and the substrate 90, the substrate 90 is far from the cooler 100, and the thermal resistance from the cooler 100 to the semiconductor element 95 is increased. It was.

  Alternatively, the fins 105 for radiating heat are formed on the surface of the cooler 100 opposite to the side on which the substrate 90 is disposed. For this reason, the distance between the fin 105 and the substrate 90 is increased, and there is room for improvement in cooling efficiency. In particular, between the semiconductor elements 93 to 95 and the cooler 100, since the substrate 90 and the ceramic substrate 102 having insulating properties with poor heat conduction are disposed, the cooling efficiency is deteriorated.

  Referring to FIG. 8, in the semiconductor device of the comparative example, the shape and distance of the electric circuit from the input portion of the semiconductor device to each of the semiconductor elements 93 to 95 are different. For this reason, there is a difference in the parasitic inductance generated from the input part of the semiconductor device to the semiconductor elements 93 to 95. For example, in the semiconductor device of the comparative example, the parasitic inductance that affects the semiconductor element 95 is larger than the parasitic inductance that affects the semiconductor element 93.

  As described above, in the semiconductor device having a planar structure, the parasitic inductance is distributed. As a result, these parasitic inductances may adversely affect the electrical characteristics output from the respective semiconductor elements.

  On the other hand, the parasitic inductance can be reduced by obtaining the mutual inductance effect. For example, by making the electric circuit for direct current electricity in the form of a parallel plate, the parasitic inductances generated in the positive or negative electric circuit are canceled out. However, in the semiconductor device of the comparative example, it is difficult to form each electric circuit in the form of a parallel plate, and it is difficult to reduce the parasitic inductance.

  Referring to FIG. 1, in the semiconductor device according to the present embodiment, a plurality of semiconductor modules are arranged at substantially the same position with respect to the flow direction of the cooling medium. With this configuration, it is possible to avoid that one semiconductor module is disposed upstream or downstream of another semiconductor module, and it is possible to cool a plurality of semiconductor modules substantially uniformly.

  The semiconductor module in the present embodiment includes cooling fins formed so as to be in contact with the cooling medium. With this configuration, the heat can be effectively exchanged with the cooling medium by the cooling fins, and the cooling efficiency is improved.

  In the present embodiment, a liquid is used as the cooling medium. The semiconductor device is preferably formed so that an insulating cooling medium can flow as the cooling medium. In this embodiment mode, the fin is coated with an insulating film having an insulating property, but by using an insulating cooling medium, an insulating film on the surface of the fin becomes unnecessary. Further, since the fins are in direct contact with the cooling medium, the cooling efficiency is improved.

  The semiconductor device in the present embodiment includes a first semiconductor module, a second semiconductor module, and a third semiconductor module in order to form respective phases of three-phase alternating current. Since the semiconductor module is formed for each phase, the position of each semiconductor module in the cooling passage can be easily adjusted. Alternatively, the position of the semiconductor element formed in the semiconductor module can be easily adjusted. For example, each semiconductor module or each semiconductor element can be easily arranged at the same position in the flow direction of the cooling medium.

  In the semiconductor module according to the present embodiment, a semiconductor element such as a power transistor is disposed on one main surface of a plate-like member such as a power bus bar, and a fin is bonded to the other main surface. The fin is in contact with the cooling medium. In the semiconductor module in the present embodiment, there are few members interposed between the semiconductor element which is a heating element and the refrigerant. For this reason, the thermal resistance from a semiconductor element to a refrigerant | coolant is small, and a semiconductor element can be cooled effectively. In addition, since a member having poor heat conductivity such as a ceramic insulating substrate is not interposed, a high cooling effect can be obtained.

  In the present embodiment, the plurality of semiconductor modules are arranged such that one extending direction is substantially parallel to each other, arranged radially when viewed from one side of the extending one direction, and further in the circumferential direction. Are arranged almost evenly. With this configuration, the distance from the input terminal of the semiconductor device to the semiconductor element arranged in the semiconductor module can be made substantially the same. In addition, the configuration of the electric circuit from the input terminal of the semiconductor device to the semiconductor element can be made almost symmetrical. As a result, the parasitic inductance that affects each semiconductor module can be made substantially uniform.

  By making the parasitic inductance uniform, the output characteristics of the semiconductor device can be stabilized. In the present embodiment, the characteristics of the three-phase alternating current formed by the inverter can be made excellent.

  In the present embodiment, the power supply side input terminal and the ground side input terminal connected to the battery are connected to the power supply bus bar and the ground bus bar of each semiconductor module while the main surfaces are substantially parallel to each other ( Not shown). With this configuration, the parasitic inductance in the connection portion can be reduced by the mutual inductance effect.

  In the present embodiment, the respective semiconductor elements arranged in the plurality of semiconductor modules are arranged at substantially the same position with respect to one direction in which the semiconductor modules extend. With this configuration, the parasitic inductance generated in the semiconductor module can be made more uniform.

  In the semiconductor module in the present embodiment, the power bus bar and the ground bus bar are formed in a plate shape, and the output bus bar is disposed between the power bus bar and the ground bus bar. Semiconductor elements are arranged between the power bus bar and the output bus bar and between the ground bus bar and the output bus bar. With this configuration, the structure of the semiconductor module can be made symmetric, and the parasitic inductance for each semiconductor element generated inside the semiconductor module can be made substantially uniform.

  Further, in the semiconductor module in the present embodiment, the power bus bar and the ground bus bar are formed in a plate shape, and the main surfaces thereof are arranged so as to be substantially parallel to each other. With this configuration, a mutual inductance effect is generated, and parasitic inductances generated in the input-side bus bar are canceled out. As a result, the parasitic inductance generated inside the semiconductor module can be reduced.

  In the semiconductor device in the present embodiment, a semiconductor module is disposed inside a case, and the case has an inlet portion and an outlet portion for a cooling medium. The case is formed such that the flow direction of the cooling medium is substantially parallel to the one direction in which the semiconductor module extends. With this configuration, the plurality of semiconductor modules can be cooled almost uniformly.

  Moreover, the case in this Embodiment is formed so that it can attach to the part in which the input terminal of the motor as a drive device is formed. With this configuration, the semiconductor device and the driving device in this embodiment can be integrated.

  FIG. 10 shows a first schematic cross-sectional view of another semiconductor module in the present embodiment. FIG. 11 shows a second schematic cross-sectional view of another semiconductor module in the present embodiment. 11 is a cross-sectional view taken along the line XI-XI in FIG.

  In another semiconductor module in the present embodiment, a plurality of power transistors Q1 and Q11 are arranged between the power supply bus bar 11a and the U-phase output bus bar 12. A plurality of power transistors Q2 and Q12 are arranged between the ground bus bar 11b and the U-phase output bus bar 12. Furthermore, in other semiconductor modules in the present embodiment, diodes D2 and D12 are arranged so as to correspond to power transistors Q2 and Q12.

  Thus, in the semiconductor module, a plurality of semiconductor elements having the same function may be arranged so that the electric circuits are connected in parallel. Alternatively, a plurality of semiconductor elements having different functions may be arranged.

  The semiconductor device in this embodiment has been described using an inverter that converts alternating current electricity into direct current as an example. However, the present invention is not limited to this embodiment, and the present invention can be applied to a semiconductor device including an arbitrary semiconductor element. .

  In the semiconductor device in this embodiment, three semiconductor modules are arranged to form three-phase alternating current electricity. However, the present invention is not limited to this embodiment, and the semiconductor device including an arbitrary number of semiconductor modules is not limited to this semiconductor device. The invention can be applied.

(Embodiment 2)
With reference to FIGS. 12 to 14, a semiconductor module and a semiconductor device according to the second embodiment of the present invention will be described. The semiconductor device in the present embodiment is an inverter that converts direct current electricity into three-phase alternating current. The semiconductor device in this embodiment includes a plurality of semiconductor module groups including a plurality of semiconductor modules.

  FIG. 12 is a schematic cross-sectional view of the first semiconductor device in the present embodiment. The first semiconductor device includes semiconductor modules 1 to 6. Each of the semiconductor modules 1 to 6 has the same configuration as the semiconductor module in the first embodiment.

  The semiconductor modules 1 and 4 are semiconductor modules for forming the U phase of the three-phase alternating current. The semiconductor modules 2 and 5 are semiconductor modules for forming the V phase of the three-phase alternating current. The semiconductor modules 3 and 6 are semiconductor modules for forming the W phase of the three-phase alternating current.

  Each semiconductor module 1-6 is arrange | positioned inside the case 62, and is arrange | positioned in the substantially the same position with respect to the flow direction of a cooling medium. The respective semiconductor modules 1 to 6 are arranged radially when viewed from one side in one direction in which the semiconductor modules extend, and are arranged substantially evenly along the circumferential direction.

  In this Embodiment, it arrange | positions so that the angle which the symmetry plane of each semiconductor module 1-6 makes mutually becomes about 60 degrees. The semiconductor modules 1 to 6 are arranged such that each of the angles θ4 to θ6 is approximately 60 °.

  The semiconductor device in the present embodiment includes a first semiconductor module group and a second semiconductor module group. The first semiconductor module group includes semiconductor modules 1 to 3. In the first semiconductor module group, the angle formed by the symmetry plane of each of the semiconductor modules 1 to 3 is arranged to be approximately 120 °. The second semiconductor module group includes semiconductor modules 4 to 6. In the second semiconductor module group, the angle formed by the symmetry plane of each of the semiconductor modules 4 to 6 is arranged to be approximately 120 °.

  In the first semiconductor device according to the present embodiment, semiconductor modules 1 and 4 that form a U phase, semiconductor modules 2 and 5 that form a V phase, and a semiconductor module 3 that forms a W phase along the circumferential direction. , 6 are arranged in this order. Each semiconductor module group is formed so that a three-phase alternating current can be formed independently. In the present embodiment, two sets of semiconductor module groups are connected in parallel.

  FIG. 13 is a schematic cross-sectional view of the second semiconductor device in the present embodiment. In the second semiconductor device, the first semiconductor module group including the semiconductor modules 1 to 3 and the second semiconductor module group including the semiconductor modules 4 to 6 are arranged along the circumferential direction. In the second semiconductor device, semiconductor modules for forming U-phase, V-phase, and W-phase electricity are repeatedly arranged in this order along the circumferential direction.

  FIG. 14 is a schematic perspective view of the third semiconductor device in the present embodiment. In the third semiconductor device, two semiconductor module groups are arranged in series. The third semiconductor device includes a first semiconductor module group, and the first semiconductor module group includes semiconductor modules 1 to 3. The third semiconductor device includes a second semiconductor module group, and the second semiconductor module group includes semiconductor modules 4 to 6.

  The third semiconductor device includes a case 62. The case 62 is formed in a cylindrical shape. The case 62 includes a supply pipe 62a that is an inlet of the cooling medium. The case 62 includes a discharge pipe 62b that is an outlet of the cooling medium. The first semiconductor module group and the second semiconductor module group are disposed inside the case 62.

  Inside the case 62, the cooling medium flows in the direction indicated by the arrow 111. Each of the semiconductor modules 1 to 3 is arranged so as to extend along the flow direction of the cooling medium indicated by the arrow 111. Further, the semiconductor modules 4 to 6 are arranged so as to extend along the flow direction of the cooling medium indicated by the arrow 111.

  The semiconductor modules 1 to 3 are arranged at substantially the same position with respect to the direction in which the cooling medium flows. The semiconductor modules 4 to 6 are arranged at substantially the same position with respect to the direction in which the cooling medium flows. In the third semiconductor device, the second semiconductor module group is disposed downstream of the first semiconductor module group.

  FIG. 15 is a schematic cross-sectional view of the third semiconductor device in the present embodiment. 15 is a cross-sectional view taken along line XV-XV in FIG. When viewed from one side in one direction in which the semiconductor modules extend, the semiconductor modules 1 to 6 are arranged radially. The semiconductor modules 1 to 3 are formed so that the angles formed by the symmetry planes are substantially the same. The semiconductor modules 4 to 6 are formed so that the angles formed by the symmetry planes are substantially the same. The semiconductor module 1 and the semiconductor module 4 forming the U phase are arranged so that the symmetry planes form an angle of approximately 60 °.

  Also in the semiconductor device in the present embodiment, each semiconductor module can be cooled substantially uniformly, and the parasitic inductance can be made substantially uniform. As in this embodiment, the semiconductor device includes a plurality of semiconductor module groups, so that the output can be increased. Alternatively, large electricity can be processed.

  In the present embodiment, two semiconductor module groups are formed. However, the present invention is not limited to this configuration, and an arbitrary number of semiconductor module groups can be arranged.

  Since other configurations, operations, and effects are the same as those in the first embodiment, description thereof will not be repeated here.

  In the respective drawings described above, the same or corresponding parts are denoted by the same reference numerals.

  In addition, the said embodiment disclosed this time is an illustration and restrictive at no points. The scope of the present invention is defined by the terms of the claims, rather than the description above, and includes all modifications within the scope and meaning equivalent to the terms of the claims.

1 is a schematic perspective view of a semiconductor device and a motor according to a first embodiment based on the present invention. It is a block diagram explaining the electric circuit of the semiconductor device and motor in Embodiment 1 based on this invention. It is a schematic perspective view of the semiconductor module in Embodiment 1 based on this invention. It is a 1st schematic sectional drawing of the semiconductor module in Embodiment 1 based on this invention. It is a 2nd schematic sectional drawing of the semiconductor module in Embodiment 1 based on this invention. 1 is a first schematic cross-sectional view of a semiconductor device according to a first embodiment of the present invention. It is the 2nd schematic sectional drawing of the semiconductor device in Embodiment 1 based on this invention. 4 is a schematic plan view of a semiconductor device of a comparative example in the first embodiment. FIG. 3 is a schematic cross-sectional view of a semiconductor device of a comparative example in the first embodiment. FIG. It is a 1st schematic sectional drawing of the other semiconductor module in Embodiment 1 based on this invention. It is a 2nd schematic sectional drawing of the other semiconductor module in Embodiment 1 based on this invention. It is a schematic sectional drawing of the 1st semiconductor device in Embodiment 2 based on this invention. It is a schematic sectional drawing of the 2nd semiconductor device in Embodiment 2 based on this invention. It is a schematic perspective view of the 3rd semiconductor device in Embodiment 2 based on this invention. It is a schematic sectional drawing of the 3rd semiconductor device in Embodiment 2 based on this invention.

Explanation of symbols

  1-6 Semiconductor module, 11a Power bus bar, 11b Ground bus bar, 12 U phase output bus bar, 13 Fin, 15 Resin, 21a Power bus bar, 21b Ground bus bar, 22 V phase output bus bar, 23 Fin, 31a Power bus bar, 31b Ground bus bar 32 W phase output bus bar, 33 fin, 41a power supply side input terminal, 41b grounding side input terminal, 51 control device, 61, 62 case, 61a, 62a supply pipe, 61b, 62b discharge pipe, 81 motor, 81a shaft, 82 Capacitor, 90 substrate, 91 power line, 92 ground line, 93 to 95 semiconductor element, 96 U phase line, 97 V phase line, 98 W phase line, 100 cooler, 102 ceramic substrate, 103 metal plate, 104 solder layer, 105 fins, 106 , 111-113 arrow, B battery, PL power line, SL ground line, Q1 to Q6, Q11～Q12 power transistors, D1 to D6, D12 diodes, Shita1～shita6 angle.

Claims (12)

A cooling passage for flowing a cooling medium;
A plurality of semiconductor modules,
The semiconductor module includes at least one semiconductor element sealed with a resin,
The plurality of semiconductor modules are arranged in the cooling passage,
The semiconductor device, wherein the plurality of semiconductor modules are arranged at substantially the same position with respect to a flow direction of the cooling medium.   The semiconductor device according to claim 1, wherein the semiconductor device is formed so as to flow the insulating cooling medium.   The semiconductor device according to claim 1, wherein the semiconductor module includes a cooling fin formed so as to be in contact with the cooling medium.   4. The semiconductor device according to claim 1, wherein the plurality of semiconductor modules include three semiconductor modules for forming each phase of three-phase alternating current from direct current electricity. 5.   5. The semiconductor device according to claim 1, wherein the plurality of semiconductor modules are arranged substantially evenly in a cross section when cut by a plane perpendicular to the flow direction of the cooling medium. A plurality of semiconductor modules,
The semiconductor module includes at least one semiconductor element;
The semiconductor module is formed to extend in one direction,
The plurality of semiconductor modules are arranged such that the one direction is substantially parallel to each other,
The plurality of semiconductor modules are arranged radially when viewed from one side of the one direction,
The semiconductor device, wherein the plurality of semiconductor modules are arranged substantially evenly along a circumferential direction when viewed from one side in the one direction.   The semiconductor device according to claim 6, wherein the plurality of semiconductor elements arranged in each of the plurality of semiconductor modules are arranged at substantially the same position with respect to the one direction.   The semiconductor device according to claim 6, wherein the plurality of semiconductor modules include three semiconductor modules for forming electricity of each phase of three-phase alternating current from direct current electricity. With a case,
The plurality of semiconductor modules are arranged inside the case,
The semiconductor device according to claim 6, wherein the case is formed so as to be attached to a portion where an input terminal of the driving device is formed. With a case,
The plurality of semiconductor modules are arranged inside the case,
The case has an inlet portion and an outlet portion for a cooling medium,
The semiconductor device according to claim 6, wherein the inlet portion and the outlet portion are formed such that a flow direction of the cooling medium and the one direction of the semiconductor module are substantially parallel to each other. A first plate member;
A second plate-like member arranged to face the first plate-like member;
A third plate-like member disposed between the first plate-like member and the second plate-like member;
A first semiconductor element disposed between the first plate-like member and the third plate-like member;
A second semiconductor element disposed between the second plate-like member and the third plate-like member;
The first plate-like member, the second plate-like member, and the third plate-like member are arranged so that their main surfaces are substantially parallel to each other,
Each of the first plate-like member, the second plate-like member, and the third plate-like member has conductivity,
The semiconductor module, wherein the first semiconductor element and the second semiconductor element are arranged so as to face each other with the third plate-like member interposed therebetween. With cooling fins,
The semiconductor module according to claim 11, wherein the cooling fin is joined to at least one of the first plate-like member and the second plate-like member.

Images