JP2007329467A - Optical semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an optical semiconductor device having a sufficiently high productivity as well as an optical semiconductor device provided by the manufacturing method. <P>SOLUTION: The manufacturing method of an optical semiconductor device includes a light emitting element and a sealing material for sealing it. The method includes a process where a resin composition which contains photopolymerizable compound, being submerged with a light emitting element, and can cure only with irradiation of light and a transparent original plate having a surface of specified shape are arranged so that the surface of the resin composition tightly contacts with the surface of specified shape. The resin composition is exposed through the transparent original plate, so that a sealing material is acquired which is an optically transparent cured material of the resin composition, of which surface tightly contacting the surface of specified shape comes to be an outgoing surface of the light emitted from the light emitting element. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an optical semiconductor device and a method for manufacturing the same.

  2. Description of the Related Art Conventionally, an optical semiconductor device having an optical semiconductor element such as a light emitting diode (LED) element, a phototransistor element, a photodiode element, or a solid-state imaging element is known. An example of the optical semiconductor device is a bullet-type light emitting diode shown in FIG. The light emitting diode 100 seals the lead frames 101a and 101b, the light emitting diode element 105 mounted on the lead frame 101a, the wire 108 connecting the lead frames 101a and 101b, and the light emitting diode element 105 and the wire 108. And a sealing material 110 covering a part of the lead frames 101a and 101b. The sealing material 110 is of a shell type made of a transparent resin. The light emitting diode 100 takes out the light from the light emitting diode element 105 in the form of being condensed outside by utilizing the refraction action of the shell-shaped curved surface of the sealing material 110.

  On the other hand, with recent miniaturization of electronic devices and higher density of wiring, light-emitting diodes called chip-type or surface-mount type that can be made smaller than a bullet-type and can take out light in various modes Is heavily used. An example of the chip-type light emitting diode is shown in the schematic cross-sectional view of FIG. The light emitting diode 200 shown in FIG. 1A includes a light emitting diode element 205 and a transparent sealing material 210 provided to seal the light emitting diode element 205. The light emitting diode element 205 is disposed at the bottom of the cavity 202 formed by the case member 207. The light emitting diode element 205 is electrically connected to the lead frame 201 a via the connection layer 220 and is electrically connected to the lead frame 201 b via the wire 208. In the light emitting diode 200, the sealing material 210 mainly serves to protect the light emitting diode element 205 from the outside air and to contain (carry) the phosphor. However, since the surface S1 is flat, the sealing material 210 does not have an optical function other than taking out light emitted from the light emitting diode element 205.

  Therefore, when a light condensing function is added to the light emitting diode, for example, an optical element 230 having a light condensing function is provided on the surface of the sealing material 210 in the light emitting diode 200 as shown in FIG. The optical element 230 is formed by, for example, injection molding of a thermoplastic resin, and then bonded to the sealing material 210. However, in this case, the encapsulant 210 and the optical element 230 are different materials and are formed separately, so that light loss due to reflection at the interface occurs due to the difference in refractive index and the presence of the interface. Moreover, the process of shape | molding the optical element 230 and the process of aligning the shape | molded optical element 230 and adhere | attaching it on the sealing material 210 are needed. Therefore, this method is complicated, and the time required for the production is long, which causes a problem of productivity.

  In order to solve such a problem, for example, means for integrally molding a sealing material and an optical member by transfer molding using a thermosetting resin has been studied. However, with this means, molding time and curing time in transfer molding become redundant, and productivity problems still remain.

  By the way, Patent Document 1 discloses a method using an ultraviolet curable resin composition for sealing a light emitting diode element. According to this document, the ultraviolet curable resin composition is used as a raw material for a sealing material of a light emitting diode element.

  Furthermore, a method of forming an optical element such as a microlens using a photocurable resin on the sealing material in a state where the light emitting diode element is sealed has been proposed (see, for example, Patent Document 2). This document describes means for forming a microlens by applying a photocurable resin composition on a sealing material by a dispensing method or an ink jet method, and photocuring.

Patent Document 3 discloses a technique of embedding a light transmitter or a light receiver in an optoelectronic element with a filler made of a cationic permeable material. According to Patent Document 3, after partially curing (semi-curing) the filler by UV irradiation, the filler is completely cured by applying heat of 100 ° C. or higher.
Japanese Patent Laid-Open No. 5-198845 JP 2002-57372 A JP-T-2004-532533

  However, the means described in Patent Document 1 does not add an optical function to the sealing material other than taking out light from the light emitting diode element. Moreover, the problem of productivity and the problem of optical loss remain by the means disclosed in Patent Document 2. Furthermore, the technique proposed in Patent Document 3 requires two steps of partial curing by irradiation with light such as UV and complete curing by heating, so that the productivity is not sufficient.

  Therefore, an optical semiconductor device in which a sealing material for a light emitting element has both a protective function for sealing the element and an optical function by having a predetermined surface shape, and such an optical semiconductor device has sufficiently high productivity. The manufacturing method which can be manufactured with this is desired.

  Accordingly, the present invention has been made in view of the above circumstances, and an object thereof is to provide an optical semiconductor device manufacturing method having sufficiently high productivity and an optical semiconductor device obtained by the manufacturing method.

  In order to achieve the above-mentioned object, the present invention is a method for manufacturing an optical semiconductor device comprising a light-emitting element and a sealing material for sealing the light-emitting element, which includes a photopolymerizable compound and immerses the light-emitting element Resin through the transparent master in a state where the resin composition that can be cured only by light irradiation and the transparent master having a surface with a predetermined shape are arranged so that the surface of the resin composition and the surface with the predetermined shape are in close contact with each other By exposing the composition, there is a step of obtaining a sealing material that is an optically transparent cured product of the resin composition, and a surface that is in close contact with the surface of a predetermined shape serves as an emission surface of light emitted from the light emitting element. A method for manufacturing an optical semiconductor device is provided. Here, the “resin composition curable only by light irradiation” means a resin composition that can obtain a desired degree of curing only by light irradiation without heating.

  According to the method for manufacturing an optical semiconductor device of the present invention, the resin composition is cured in a state where the surface of the resin composition and the surface of the predetermined shape on the transparent master are in close contact with each other. Thereby, the surface of the sealing material which is a hardened | cured material of a resin composition has a shape which faithfully transferred the predetermined shape of the transparent original disk surface. Therefore, for example, when an optical function such as a light collecting function, a light scattering function, or a light distribution function by refraction or diffraction is given to the sealing material, a desired surface shape of the sealing material corresponding to the optical function is determined and the surface A shape obtained by transferring the shape may be a predetermined shape on the surface of the transparent master. By doing so, the light emission surface of the light emitting element in the sealing material can have the above-described desired surface shape, and the sealing material has a protective function for sealing the light emitting element and a predetermined surface shape. It is provided with a sealing material that has both the optical function of having it.

  Moreover, in this invention, the process of providing the protective function of a light emitting element to a sealing material and the process of providing an optical function to a sealing material are performed simultaneously by photocuring of a resin composition. Therefore, according to the present invention, it is not necessary to form the sealing material and the optical element separately, and the alignment between them is not necessary, and the number of steps can be reduced as compared with the prior art. In addition, the curing time of the photopolymerizable compound is generally shorter than the curing time of the thermally polymerizable compound. Furthermore, since the resin composition can be cured only by light irradiation, it is not necessary to provide a complete curing step by heat, and is excellent in mass productivity (production efficiency). As a result, the manufacturing method of the optical semiconductor device of the present invention is a manufacturing method having sufficiently high productivity.

  Furthermore, since the sealing material according to the present invention is integrally formed with an optical element that exhibits an optical function such as a light collecting function, the sealing material and the optical element are formed separately. It is possible to sufficiently prevent the optical loss that occurs in Moreover, since the transferability of the surface shape of the photocurable resin is generally better than that of the thermosetting resin, a sealing material having a desired surface shape can be obtained more easily.

  In the method for producing an optical semiconductor device of the present invention, it is preferable that the resin composition is filled in a cavity portion containing a light emitting element. This makes it possible to more efficiently manufacture a chip-type optical semiconductor device. When the transparent master is not required for the optical semiconductor device, the present invention may further include a step of peeling the transparent master from the surface of the cured product after the step of obtaining the sealing material.

  The method for manufacturing an optical semiconductor device of the present invention includes a step of pouring a resin composition into a cavity portion before the step of obtaining a sealing material, and a surface of a predetermined shape that the transparent master has on the surface of the poured resin composition. And a step of closely adhering. Alternatively, in the method of manufacturing an optical semiconductor device according to the present invention, the transparent master is provided with a flow path, and the surface of the predetermined shape is opposed to the cavity before the step of obtaining the sealing material. And a step of pouring the resin composition from the flow path into the cavity until the surface of the resin composition is in close contact with the surface of the predetermined shape on the transparent master.

  In the method for manufacturing an optical semiconductor device of the present invention, the light emitting element is preferably a light emitting diode element. Thereby, the above-mentioned operation and effect of the present invention are more effectively and reliably exhibited.

  Moreover, in the manufacturing method of the optical semiconductor device of this invention, it is preferable in a photopolymerizable compound being a (meth) acrylate type photopolymerizable compound. Since the (meth) acrylate photopolymerizable compound has a good balance between the difficulty of coloring the cured product and the mechanical properties, it has an optical function such as light transmittance and durability from the light emitting element. Excellent properties due to its properties as a stopper.

  The present invention is an optical semiconductor device comprising a light emitting element, a sealing material for sealing the light emitting element, and an optical element having a surface with a predetermined shape bonded to the sealing material. The surface opposite to the surface of the shape is in close contact with the light emitting surface of the light emitting element in the sealing material, and the sealing material contains a photopolymerizable compound and can be cured only by light irradiation. Provided is an optical semiconductor device which is an optically transparent cured product of the composition.

  This optical semiconductor device of the present invention has sufficiently high adhesion between the sealing material and the optical element, and can sufficiently reduce the gap between them. As a result, light from the light emitting element can be extracted sufficiently efficiently. In addition, since a photopolymerizable compound that cures more rapidly than the thermopolymerizable compound is used as the material of the sealing material, an optical semiconductor device having an optical function is manufactured with sufficiently high productivity.

  The optical semiconductor device of the present invention is preferably obtained by bonding the sealing material and the optical element at the same time as obtaining the sealing material by curing the resin composition by exposure. As a result, the number of steps in the manufacture of the optical semiconductor device can be reduced as compared with the prior art. Furthermore, the curing time of the photopolymerizable compound is generally shorter than the curing time of the thermally polymerizable compound. Therefore, the optical semiconductor device according to the present invention can be manufactured sufficiently more easily than before, and the productivity can be improved.

  In addition, since the sealing material and the optical element are bonded by the curing of the resin composition, the adhesion between them is sufficiently higher, and the generation of voids is sufficiently suppressed. Therefore, the light from the light emitting element can be extracted more efficiently.

  The present invention is an optical semiconductor device including a light emitting element, a sealing material that seals the light emitting element, an optical element having a surface with a predetermined shape, and an adhesive layer that bonds the sealing material and the optical element. The surface of the optical element opposite to the surface of the predetermined shape is in close contact with the light emitting surface of the light emitting element in the adhesive layer, and the adhesive layer contains a photopolymerizable compound and is only irradiated with light. Provided is an optical semiconductor device which is an optically transparent cured product of a curable resin composition.

  The optical semiconductor device of the present invention has sufficiently high adhesion between the sealing material and the adhesive layer and between the adhesive layer and the optical element, and sufficiently reduces the gap between them. Can do. As a result, light from the light emitting element can be extracted sufficiently efficiently. In addition, since a photopolymerizable compound that cures more rapidly than the thermopolymerizable compound is used as the material of the adhesive layer, an optical semiconductor device having an optical function is manufactured with sufficiently high productivity.

  The optical semiconductor device of the present invention is preferably formed by adhering a sealing material and an optical element through an adhesive layer by curing the resin composition by exposure. Since the curing time of the photopolymerizable compound is generally shorter than the curing time of the thermally polymerizable compound, the optical semiconductor device according to the present invention can be manufactured more easily than before, and the productivity can be improved. it can.

  In addition, since the sealing material and the optical element are bonded through the adhesive layer by the curing of the resin composition in the adhesive layer, the adhesion between them is sufficiently higher, and voids are generated. It is sufficiently suppressed. Therefore, the light from the light emitting element can be extracted more efficiently.

  In the optical semiconductor device of the present invention, it is preferable that the sealing material and the adhesive layer are mainly composed of the same type of material. Thereby, the optical loss at the interface between the sealing material and the adhesive layer based on the difference in refractive index can be further prevented.

  In the optical semiconductor device of the present invention, it is preferable that the sealing material and the optical element are composed mainly of the same type of material. By doing so, light loss at the interface between the sealing material and the optical element based on the difference in refractive index, and the adhesive layer are provided, and the sealing material and the adhesive layer are mainly composed of the same type of material. In this case, the optical loss at the interface between the adhesive layer and the optical element can be further suppressed.

  In the optical semiconductor device of the present invention, the light emitting element is preferably a light emitting diode element. Thereby, the above-mentioned operation and effect of the present invention can be more effectively and reliably exhibited.

  In the optical semiconductor device of the present invention, the photopolymerizable compound is preferably a (meth) acrylate photopolymerizable compound. Since the (meth) acrylate photopolymerizable compound has a good balance between the difficulty of coloring the cured product and the mechanical properties, it has an optical function such as light transmittance and durability from the light emitting element. Excellent properties due to its properties as a stopper.

  According to the present invention, it is possible to provide an optical semiconductor device including a sealing material having both a protective function for sealing a light emitting element and an optical function by having a predetermined surface shape, and a sufficiently simple manufacturing method thereof. it can.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as necessary. In the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios. In the present specification, “(meth) acryl” means “acryl” and “methacryl” corresponding thereto, “(meth) acrylate” means “acrylate” and “methacrylate” corresponding thereto, “(Meth) acryloyl” means “acryloyl” and its corresponding “methacryloyl”.

  FIG. 3 is a process cross-sectional view schematically showing the first embodiment of the method for manufacturing an optical semiconductor device of the present invention. First, in step (a), an assembly member 350 is prepared. The assembly member 350 includes a case member 307 that forms the cavity portion 302, a light emitting diode element 305 that is disposed at the bottom so as to be included in the cavity portion 302, and a pair of lead frames 301 a that are incorporated in the case member 307. , B. The case member 307 has such a shape that the cavity part 302 can hold a resin composition 315 that contains a photopolymerizable compound, which will be described later, and can be cured only by light irradiation. It is circular. The light emitting diode element 305 is electrically connected to one end of the lead frame 301a via a connection layer 320 formed of a conductive paste or the like. Further, the light emitting diode element 305 and one end (terminal) of the lead frame 301b are electrically connected through a wire 308 made of a conductive material.

  Next, in the step (b), a liquid or paste-like resin composition 315 is poured into the cavity portion 302, the cavity portion 302 is filled with the resin composition 315, and a transparent master 370 is prepared. The light emitting diode element 305 is immersed in the resin composition 315 by filling the cavity portion 302 with the resin composition 315.

  The transparent master 370 includes a flat substrate portion 370b and a transfer portion 370a formed on the main surface of the substrate portion 370b, which are integrally formed. The surface shape of the transfer portion 370a is a convex lens shape, and the connection portion with the substrate portion 370b has a circular shape having the same diameter as the opening portion of the cavity portion 302 or a slightly larger diameter. Such a shape of the transparent master 370 can be formed by chemical etching, physical etching, cutting, or the like. The material of the transparent master 370 may be any material that can transmit light for curing the resin composition 315, and a master having excellent transparency and mechanical properties such as quartz glass is preferable. In addition, the transparent master 370 is preferably one in which the surface of the transfer portion 370a has been subjected to a mold release process in order to facilitate peeling from a sealing material 310 described later.

  Subsequently, in step (c), the transparent master 370 is disposed on the assembly member 350, and the resin composition 315 is irradiated with light P through the transparent master 370 to be exposed. When the transparent master 370 is disposed, the transfer portion 370a covers the opening portion of the cavity portion 302 so that the substrate portion 370b and the upper end of the case member 307, or the periphery of the opening portion of the cavity portion 302 and the transfer portion. 370a is placed in contact. Thereby, the resin composition 315 is enclosed by the assembly member 350 and the transparent master 370, and the surface of the transfer portion 370a is in close contact with the surface of the resin composition 315.

  The resin composition 315 is cured by exposure to form the sealing material 310. At this time, since the surface S3 of the sealing material 310 and the surface of the transfer portion 370a of the transparent master 370 are in close contact with each other and form an interface, the surface S3 of the sealing material 310 has a convex lens shape of the transfer portion 370a. A concave lens-like shape which is a transferred shape with respect to the surface shape of the lens. The light source of light P used for exposure is not particularly limited as long as the resin composition 315 can be cured. As a suitable light source, for example, a near ultraviolet light source corresponding to the absorption wavelength of a radical photopolymerization initiator contained in a resin composition such as an ultrahigh pressure mercury lamp, a metal halide lamp, or a super metal halide lamp can be cited.

Suitable exposure conditions are not uniquely determined because they depend on the light source, the amount of radical photopolymerization initiator added, the resin composition, and the like. For example, when applying an ultra-high pressure mercury lamp as the light source, preferable to be 1000~4000mJ / cm ² is accumulative exposure illuminance 11.6 mW / cm ^2, more preferably a 2000~3000mJ / cm ^2.

  In addition, the degree of cure of the resin composition 315 that is cured by exposure may be such that a desired physical property of the sealing material 310, for example, an elastic modulus and a glass transition temperature can be obtained. This degree of cure is derived from the content of the photopolymerizable compound remaining in the encapsulant 310 that is a cured product. For example, when the photopolymerizable compound is (meth) acrylate, the content of (meth) acrylate in the cured product is normalized from the intensity of the absorption peak based on the double bond of (meth) acrylate in the infrared absorption spectrum. Thus, the degree of cure can be derived. The content of (meth) acrylate in the cured product is preferably 5% or less and more preferably 3% or less with respect to the total amount of (meth) acrylate before curing.

  In the step (d), the transparent master 370 is peeled off from the sealing material 310 to obtain the light emitting diode 300 in which the cavity 302 in the assembly member 350 is filled with the sealing material 310.

  According to the manufacturing method of the first embodiment, the resin composition 315 is cured in a state where the surface of the resin composition 315 and the surface of the transfer portion 370a of the transparent master 370 are in close contact with each other. Accordingly, the surface S3 of the sealing material 310 is formed by faithfully transferring the shape (convex lens shape) of the surface of the transfer portion 370a, and thus can have a desired shape (concave lens shape). Therefore, the optical function (scattering function) of the sealing material 310 is as designed.

  Further, according to the manufacturing method of the first embodiment, the step of imparting a protective function of the light emitting diode element 305 to the encapsulant 310 and the optical function of the encapsulant 310 by photocuring the resin composition 315. The process is performed simultaneously. Therefore, in this embodiment, the sealing material 310 also has a function as an optical element, and it is not necessary to form the optical element separately. Therefore, an alignment process is not necessary, and the number of processes is reduced as compared with the prior art. Can do. In addition, the curing time of the photopolymerizable compound is generally shorter than the curing time of the thermally polymerizable compound. As a result, the manufacturing method according to the first embodiment is a manufacturing method with sufficiently high productivity.

  Furthermore, since the sealing material 310 according to this embodiment is formed integrally with the optical element, it sufficiently prevents light loss that occurs when the sealing material and the optical element are formed separately. It becomes possible. In addition, since the resin composition 315 is directly filled in the cavity 302 containing the light-emitting diode element 305 and cured in that state to form the sealing material 310, the chip-type light-emitting diode 300 is more efficiently manufactured. It becomes possible to do.

  In the manufacturing method of the first embodiment, not only when the surface shape of the sealing material is a concave lens shape, but also when a function of a refractive grating or a diffraction grating is added to the sealing material, or a concave surface other than the concave lens shape is formed. In this case, it is particularly preferably used.

  FIG. 4 is a process sectional view schematically showing a second embodiment of the method for manufacturing an optical semiconductor device of the present invention. First, in step (a), an assembly member 350 similar to that of the first embodiment is prepared. Next, in the step (b), a transparent master 470 is prepared. The transparent master 470 is obtained by providing a transfer portion 470a which is a depression having a surface of a circular concave lens shape on a flat substrate portion 470b. The substrate portion 470b is provided with a flow path 470c extending from the side surface to the transfer portion 470a. The material and forming method of the transparent master 470 can be the same as those of the transparent master 370 of the first embodiment.

  Subsequently, in the step (c), the transparent master 470 is disposed on the assembly member 350, and a resin composition 315 containing a photopolymerizable compound described later and curable only by light irradiation is poured. When the transparent master 470 is disposed, the substrate portion 470b and the upper end of the case member 307 are in contact with each other so that the transfer portion 470a covers the opening portion of the cavity portion 302.

  In the pouring of the resin composition 315, the liquid or paste-like resin composition 315 is poured into the space surrounded by the cavity portion 302 and the transfer portion 470a through the flow path 470c, and the space is filled with the resin composition 315. To do. As a result, the resin composition 315 is enclosed by the assembly member 350 and the transparent master 470, so that the light emitting diode element 305 is immersed, and the surface of the transfer portion 470a is in close contact with the surface of the resin composition 315.

  Next, in the step (d), the resin composition 315 is irradiated with light P through the transparent master 470 to be exposed. The resin composition 315 is cured by exposure to form the sealing material 410. At this time, since the surface S4 of the sealing material 410 and the surface of the transfer portion 470a of the transparent master 470 are in close contact with each other and form an interface, the surface S4 of the sealing material 410 has a concave lens shape of the transfer portion 470a. A convex lens-like shape which is a transferred shape with respect to the surface shape. As the light source of the light P used for exposure, the same light source as that in the first embodiment can be adopted.

  Then, in the step (e), the transparent master 470 is peeled from the sealing material 410 to obtain the light emitting diode 400 in which the cavity portion 302 in the assembly member 350 is filled with the sealing material 410.

  According to the manufacturing method of the second embodiment, the resin composition 315 is cured in a state where the surface of the resin composition 315 and the surface of the transfer portion 470a of the transparent master 470 are in close contact with each other. Accordingly, the surface S4 of the sealing material 410 is formed by faithfully transferring the shape (concave lens shape) of the surface of the transfer portion 470a, and thus can have a desired shape (convex lens shape). Therefore, the optical function (scattering function) of the sealing material 410 is as designed.

  Further, according to the manufacturing method of the second embodiment, the step of imparting the protective function of the light emitting diode element 305 to the encapsulant 410 and the optical function of the encapsulant 410 by photocuring the resin composition 315. The process is performed simultaneously. Therefore, in this embodiment, the sealing material 410 also has a function as an optical element, and it is not necessary to form the optical element separately. Therefore, an alignment process is not required, and the number of processes is reduced as compared with the prior art. Can do. In addition, the curing time of the photopolymerizable compound is generally shorter than the curing time of the thermally polymerizable compound. As a result, the manufacturing method of the second embodiment is a manufacturing method with sufficiently high productivity.

  Furthermore, since the sealing material 410 according to this embodiment is integrally formed with the optical element, it sufficiently prevents light loss that occurs when the sealing material and the optical element are formed separately. It becomes possible. Further, since the resin composition 315 is filled in the cavity 302 containing the light-emitting diode element 305, the chip-type light-emitting diode 400 can be manufactured more efficiently.

  The manufacturing method of the second embodiment is particularly preferably used not only when the surface shape of the sealing material is a convex lens shape but also when a convex surface other than the convex lens shape is formed.

  In the first and second embodiments described above, the sealing of the light emitting diode element as the optical semiconductor element and the production of the optical element are performed simultaneously.

  FIG. 5 is a process cross-sectional view schematically showing a third embodiment of the method for manufacturing an optical semiconductor device of the present invention. First, in step (a), an assembly member 350 similar to that of the first embodiment is prepared.

  Next, in the step (b), a liquid or paste-like resin composition 315 containing a photopolymerizable compound, which will be described later, that can be cured only by light irradiation is poured into the cavity portion 302, and the cavity portion 302 is formed into the resin composition. Fill with 315.

  Subsequently, in the step (c), the optical element 580 is placed on the surface of the resin composition 315 filled in the cavity portion 302. The optical element 580 is not particularly limited as long as it is used in a conventional optical semiconductor device. For example, an optical element 580 provided with a refraction or diffraction grating such as a concave lens, a convex lens, a microlens, and a Fresnel lens. Can be mentioned. Moreover, it is preferable that the optical element 580 has a dimension such that an end portion thereof can be placed on the case member 307.

  The material of the optical element 580 is not particularly limited as long as it can transmit the light P used for exposure of the resin composition 315 and can effectively exhibit a desired optical function. When the material of the optical element 580 is a curable resin composition, it may be produced by photocuring or may be produced by thermosetting. However, the optical element 580 is preferably composed mainly of the same type of material as that of the sealing material 510 described later. By so doing, light loss at the interface between the sealing material 510 and the optical element 580 based on the difference in refractive index can be more effectively suppressed.

  Examples of the material of the optical element 580 include (meth) acrylic resin such as PMMA, cycloolefin resin, epoxy resin, urethane resin, and silicone resin. These are used singly or in combination of two or more.

  In the step (d), the resin composition 315 is exposed to light P through the optical element 580 and exposed to light, whereby the resin composition 315 is cured and forms the sealing material 510. In this way, the light emitting diode 500 in which the cavity portion 302 in the assembly member 350 is filled with the sealing material 510 and the optical element 580 is further provided on the sealing material is obtained. As the light source of the light P used for exposure, the same light source as that in the first embodiment can be adopted.

  The light emitting diode 500 obtained by the manufacturing method of the third embodiment has sufficiently high adhesion between the sealing material 510 and the optical element 580, and can sufficiently reduce the gap between them. Furthermore, since the sealing material 510 and the optical element 580 are bonded by curing the resin composition 315, the adhesion between them is particularly high, and the generation of voids is particularly sufficiently suppressed. . As a result, light from the light emitting diode element 305 can be extracted very sufficiently efficiently.

  Further, in the light emitting diode 500, the sealing material 510 is obtained by curing the resin composition 315, and at the same time, the sealing material 510 and the optical element 580 are bonded. As a result, the number of steps in manufacturing the light emitting diode can be reduced as compared with the conventional case. Furthermore, the curing time of the photopolymerizable compound is generally shorter than the curing time of the thermally polymerizable compound. Therefore, the light emitting diode 500 according to this embodiment can be manufactured more easily than in the past, and the productivity can be sufficiently improved.

  In the third embodiment described above, the sealing of the light emitting diode element as the optical semiconductor element and the bonding between the optical element and the sealing material are performed simultaneously.

  FIG. 6 is a process cross-sectional view schematically showing a fourth embodiment of the method for manufacturing an optical semiconductor device of the present invention. First, in step (a), an assembly member 350 similar to that of the first embodiment is prepared. Next, in step (b), the cavity portion 302 is filled with a resin composition 315 that contains a photopolymerizable compound and can be cured only by light irradiation, and then the resin composition 315 is exposed. Thus, the sealing material 610 is obtained. As the light source used for this exposure, the same light source as the light P in the first embodiment can be used.

  Subsequently, in step (c), after a liquid adhesive layer 690 is formed on the surface of the sealing material 610 filled in the cavity portion 302, the optical element 680 is further placed thereon in this order. As the optical element 680, the same optical element as the optical element 580 in the third embodiment can be adopted.

  The material of the adhesive layer 690 is not particularly limited as long as it is a resin composition that contains a photopolymerizable compound and can be cured only by light irradiation, and can transmit the light P regardless of before and after exposure. However, the material of the adhesive layer 690 is preferably composed mainly of the same material as the material of the sealing material 610 described later, that is, the resin composition 315 or the optical element 680. Thereby, it is possible to more effectively prevent light loss between the sealing material 610 based on the difference in refractive index and the cured adhesive layer 695 or at the interface between the optical element 680 and the cured adhesive layer 695. . From the same viewpoint, it is more preferable that the cured adhesive layer 695, the sealing material 610, and the optical element 680 have the same kind of materials as the main components.

  Examples of the material of the adhesive layer 690 include the same material as the material of the resin composition 315. These are used singly or in combination of two or more.

  In step (d), the liquid adhesive layer 690 is irradiated with light P through the optical element 680 to be exposed. As a result, the liquid adhesive layer 690 is cured to form a cured adhesive layer 695, and the adhesive layer 695 bonds between the sealing material 610 and the optical element 680. Thus, the light emitting diode 600 in which the cavity portion 302 in the assembly member 350 is filled with the sealing material 610 and the adhesive layer 695 and the optical element 680 are further provided in this order on the sealing material 610 is obtained. As the light source of the light P used for exposure, the same light source as that in the first embodiment can be adopted.

  The light emitting diode 600 obtained by the manufacturing method according to the fourth embodiment has sufficiently high adhesion between the sealing material 610 and the adhesive layer 695 and between the adhesive layer 695 and the optical element 680. The space between them can be sufficiently reduced. Further, since the sealing material 610 and the optical element 680 are bonded via the cured adhesive layer 695 by the curing of the resin composition in the adhesive layer 690, the adhesion between them is particularly good. The generation of voids is particularly sufficiently suppressed. As a result, light from the light emitting diode element 305 can be extracted very sufficiently efficiently.

  In addition, since the curing time of the photopolymerizable compound is generally shorter than the curing time of the thermally polymerizable compound, according to the method for manufacturing the light-emitting diode 600, the light-emitting diode 600 can be manufactured more easily than before, and the productivity is sufficiently high. Can be improved.

  The resin composition 315 used in the first, second, third, and fourth embodiments described above is a resin that cures only by light irradiation to form a resin, and is preferably the following resin composition. That is, the resin composition according to a preferred embodiment of the present invention contains a photopolymerizable compound and a photo radical polymerization initiator that is a curing agent thereof.

  The photopolymerizable compound is not particularly limited as long as it can be cured by photopolymerization and has excellent translucency and mechanical properties after curing. Examples of such photopolymerizable compounds include (meth) acrylate photopolymerizable compounds and epoxy photopolymerizable compounds. Among these, a (meth) acrylate photopolymerizable compound is preferable from the viewpoint of excellent optical characteristics. As the (meth) acrylate-based photopolymerizable compound, a (meth) acrylate monomer, a (meth) acrylate-based polymerization reactive oligomer, and a mixture thereof are preferable.

  As the (meth) acrylate monomer, a monofunctional (meth) acrylate, a polyfunctional (meth) acrylate, a (meth) acrylate compound having a functional group such as an epoxy group, and a substituent containing a siloxane structure at the ester terminal (Meth) acrylate compounds having These are used singly or in combination of two or more.

  In addition, the resin composition according to another preferred embodiment of the present invention includes (A) a mono (meth) acrylate having a substituent containing a siloxane structure at the ester end (hereinafter, sometimes referred to as “component (A)”). (B) a polyfunctional (meth) acrylate having a polyorganosiloxane skeleton (hereinafter sometimes referred to as “component (B)”) and (C) a non-silicone (meth) acrylate (hereinafter sometimes referred to as “(C) ) Component ”and (D) a radical polymerization initiator (hereinafter, sometimes referred to as“ (D) component ”). Such a resin composition is a resin composition that is sufficiently cured by light irradiation.

ここで、式（１）中、Ｒ^１、Ｒ^２及びＲ^３は各々独立に水素原子、炭素数１〜９のアルキル基、アリール基又はトリメチルシロキシ基を示し、Ｒ^４は水素原子又はメチル基を示し、ｍは０〜１０の整数を示す。なお、Ｒ^１、Ｒ^２及びＲ^３のうちの少なくとも１つはトリメチルシロキシ基を示す。 Although it does not specifically limit as mono (meth) acrylate which has a substituent which contains a siloxane structure in the ester terminal which is (A) component, It is preferable that it is a compound represented by following General formula (1).

Here, in formula (1), R ¹ , R ² and R ³ each independently represent a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, an aryl group or a trimethylsiloxy group, and R ⁴ represents a hydrogen atom or a methyl group. M represents an integer of 0 to 10. Note that at least one of R ¹ , R ² and R ³ represents a trimethylsiloxy group.

  Examples of the mono (meth) acrylate represented by the general formula (1) include (3-acryloxypropyl) tris (trimethylsiloxy) silane, (3-methacryloxypropyl) tris (trimethylsiloxy) silane, (3 -Acryloxypropyl) methylbis (trimethylsiloxy) silane, (3-methacryloxypropyl) methylbis (trimethylsiloxy) silane, and the like. Among them, (3-methacryloxypropyl) tris (trimethylsiloxy) silane is preferable.

  (B) Although it does not specifically limit as polyfunctional (meth) acrylate which has the polyorganosiloxane frame | skeleton which is a component, It should be di (meth) acrylate which has a (meth) acryloyl group at both ends of a polyorganosiloxane main chain. The molecular weight (weight average molecular weight) is preferably 200 to 7000. When the molecular weight of the di (meth) acrylate is less than 200, the effect of improving the mechanical properties of the cured product due to the introduction of polyorganosiloxane tends to be small. When the molecular weight exceeds 7000, (C) a non-silicone (meta) ) Compatibility with acrylate is reduced, and the transparency of the cured product tends to be reduced.

  Although it does not specifically limit as (C) component non-silicone type | system | group (meth) acrylate, It is preferable to contain the mono (meth) acrylate which has a substituent containing an epoxy group in the ester terminal. Examples of mono (meth) acrylate having a substituent containing an epoxy group at the ester terminal include glycidyl methacrylate, 3,4-epoxycyclohexylmethyl acrylate, 3,4-epoxycyclohexylmethyl methacrylate, and 1,4-hydroxybutyl acrylate. A glycidyl ether etc. are mentioned, A glycidyl methacrylate is especially preferable.

  Further, (C) the non-silicone (meth) acrylate may contain a mono (meth) acrylate having no substituent containing an epoxy group at the ester terminal. Examples of the mono (meth) acrylate having no substituent containing an epoxy group at the ester terminal include methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, t-butyl methacrylate, isobutyl methacrylate, 2-ethylhexyl methacrylate, cyclohexyl methacrylate, and benzyl. Examples include methacrylate, isobornyl methacrylate, n-butyl acrylate, t-butyl acrylate, 2-ethylhexyl acrylate, cyclohexyl acrylate, benzyl acrylate, and isobornyl acrylate. These can be used individually by 1 type or in combination of 2 or more types.

  The (C) non-silicone (meth) acrylate may contain a multifunctional non-silicone (meth) acrylate. Examples of the polyfunctional non-silicone (meth) acrylate include ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol dimethacrylate, 1, 9-nonanediol dimethacrylate, 1,10-decanediol dimethacrylate, dimethylol-tricyclodecane dimethacrylate, trimethylolpropane trimethacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, 1, 9-nonanediol diacrylate, 1,10-decanediol diacrylate, neopentyl glycol diacrylate, 3-methyl-1,5-pentanediol diacrylate 1,6-hexanediol diacrylate 2-butyl-2-ethyl-1,3-propanediol diacrylate, 1,9-nonanediol diacrylate, dimethylol-tricyclodecane diacrylate, ethoxylated isocyanuric acid tri An acrylate etc. are mentioned.

  In addition, (C) non-silicone (meth) acrylate is a non-silicone (meth) acrylate containing a reactive polar group such as an epoxy group, a hydroxyl group, or an alkoxy group. Can be granted.

  The radical polymerization initiator as component (D) is a photo radical polymerization initiator that can cure the resin composition by light irradiation, and efficiently absorbs and activates the ultraviolet rays of an industrial UV irradiation apparatus. If it does not yellow a thing, it will not specifically limit. Examples of such radical polymerization initiators include 1-hydroxycyclohexyl phenyl ketone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2-hydroxy-methyl-1-phenyl-propane-1- And oligo (2-hydroxy-2-methyl-1- (4- (1-methylvinyl) phenyl) propanone, which are used alone or in combination of two or more. When the above is combined, specific examples thereof include a mixture of oligo (2-hydroxy-2-methyl-1- (4- (1-methylvinyl) phenyl) propanone and tripropylene glycol diacrylate, and oxy-phenyl- Acetic acid 2- (2-oxo-2-phenyl-acetoxy-ethoxy) -ethyl ester and oxy Phenyl - acetate tic acid 2- (2-hydroxy - ethoxy) - a mixture of ethyl esters.

  Moreover, in addition to the said radical photopolymerization initiator, you may use a thermal radical polymerization initiator together with a resin composition. As such a thermal radical polymerization initiator, any of radical azo initiators, peroxide initiators and the like that can be used for normal thermal radical polymerization can be used. Examples of the azo initiator include azobisisobutyronitrile, azobis-4-methoxy-2,4-dimethylvaleronitrile, azobiscyclohexanone-1-carbonitrile, azodibenzoyl, and the like. Examples of peroxide initiators include benzoyl peroxide, lauroyl peroxide, di-t-butylperoxyhexahydroterephthalate, t-butylperoxy-2-ethylhexanoate, 1,1-t-butylperoxide. Examples include oxy-3,3,5-trimethylcyclohexane, t-butylperoxyisopropyl carbonate, and the like. These are used singly or in combination of two or more.

  In addition to the components (A) to (D) described above, a polymerization reactive acrylic oligomer may be added to the resin composition. The polymerization-reactive acrylic oligomer is not particularly limited, but is preferably an acrylic oligomer containing one or more (meth) acryloyl groups, more preferably an acrylic oligomer (macromonomer) having a (meth) acryloyl group terminal. preferable.

  In this resin composition, (A) a mono (meth) acrylate having a substituent containing a siloxane structure at the ester terminal, (B) a polyfunctional (meth) acrylate having a polyorganosiloxane skeleton, (C) a non-silicone (meta) The blending amount of acrylate) and radical polymerization initiator (D) depends on the structure and molecular weight of the various (meth) acrylates used, but the total blending amount of component (A) and component (B) and (C) It is preferable that mass ratio ((A) component + (B) component: (C) component) with the compounding quantity of a component is 40: 60-90: 10, and it is more preferable that it is 70: 30-90: 10. preferable. When the blending amount of the component (C) based on the total blending amount of the components (A) to (C) exceeds 60% by mass, the effect of introducing the siloxane skeleton is small and the phase tends to be easily separated. . On the other hand, when the blending amount of the component (C) is less than 10% by mass, the effect of introducing a non-silicone (meth) acrylate such as adhesion imparting tends to decrease.

  Moreover, in this resin composition, mass ratio ((A) component: (B) component) of the compounding quantity of (A) component and the compounding quantity of (B) component shall be 30: 70-70: 30. Is preferable, and 40:60 to 60:40 is more preferable. When the blending amount of the (B) component based on the total blending amount of the (A) component and the (B) component exceeds 70% by mass, the compatibility between the (B) component and the (C) component decreases, There is a tendency to phase separate. On the other hand, when the blending amount of the component (B) is less than 30% by mass, the polyfunctional components are decreased, and thus the mechanical properties of the cured product such as toughness, breaking strength and heat resistance tend to be lowered.

  Moreover, in this resin composition, it is preferable that the compounding quantity of (D) component shall be 0.01-5 mass parts with respect to 100 mass parts of total amounts of (A)-(C) component, More preferably, it is 1 part by mass. If this amount exceeds 5 parts by mass, the cured product tends to be colored by heat and ultraviolet rays, and if it is less than 0.01 part by mass, the resin composition tends to be difficult to cure.

  The resin composition may contain other components as necessary in addition to the above-described photopolymerizable compound and photoradical polymerization initiator. For example, a hindered amine-based light stabilizer, a phenol-based or phosphorus-based antioxidant, an ultraviolet absorber, an inorganic filler, an organic filler, a coupling agent, and a polymerization inhibitor can be added to the resin composition. From the viewpoint of moldability, a mold release agent, a plasticizer, an antistatic agent, a flame retardant, and the like may be added to the resin composition.

  Each of the above components is preferably liquid from the viewpoint of ensuring the translucency of the cured product of the resin composition. Moreover, when using a solid thing for each said component, what has a particle size below the wavelength of the light emitted from a light emitting element is preferable.

  The preferred embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment. The present invention can be variously modified without departing from the gist thereof.

  For example, the surface shape of the transfer portion in the transparent master according to the present invention is not limited to the shape for forming a single uneven shape such as a lens, for example, an aggregate of fine uneven shapes such as a microlens, It may have a shape for forming a refractive grating such as a Fresnel lens, a diffraction grating, or the like. By adopting these surface shapes on the transparent master, light that has passed through the sealing material from the light emitting element is reflected, refracted, or diffracted at the interface between the sealing material and air. Thus, the direction of the light beam is changed, and finally the light beam can be emitted to the outside of the optical semiconductor device more effectively.

  The optical semiconductor device is not limited to a light emitting diode including a light emitting diode element as a light emitting element, and may be a photodiode including a photodiode element, an imaging apparatus including a solid-state imaging element, or the like.

  Moreover, it is desirable to reduce the oxygen concentration in the resin composition in advance by nitrogen bubbling in order to inhibit curing and prevent coloring.

  Furthermore, in the fourth embodiment, in the step (b), the resin composition 315 containing a photopolymerizable compound is used to obtain the sealing material 610. Instead, the resin composition containing a thermopolymerizable compound is used. May be adopted. In this case, the sealing material is obtained by heating and thermosetting the resin composition filled in the cavity portion 302. This resin composition contains a thermally polymerizable compound and its curing agent. Examples of the thermally polymerizable compound include an epoxy resin, a urethane resin, and a silicone resin. These are used singly or in combination of two or more.

  EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited to these Examples.

Example 1
First, an assembly member similar to that shown in FIG. 3A was prepared as follows. A lead frame having the same shape as that shown in FIG. 3 and a case member made of polyphthalimide having a diameter of 2.4 mm in the opening of the cavity (external dimensions: width 3.2 mm × depth 2.6 mm × thickness) Next, a light emitting diode element (emission wavelength: 470 mm) was mounted on the lead frame exposed at the bottom of the cavity portion via a silver paste, and then the light emitting diode element was mounted. The terminal of the lead frame that was not connected and the light emitting diode element were connected by wire bonding using a gold wire to obtain an assembly member.

  Subsequently, a resin composition containing a photopolymerizable compound was poured into the cavity portion and filled. The resin composition comprises 40 parts by mass of (3-methacryloxypropyl) tris (trimethylsiloxy) silane (manufactured by Chisso Corporation, trade name “Sylaplane TM-0701T”) as a photopolymerizable compound, both-end methacryloxy-modified silicone (Shin-Etsu Silicone) Product name "X-22-164A", molecular weight: 860) 40 parts by mass, glycidyl methacrylate 19 parts by mass, and one containing 1.0 part by mass of 1-hydroxycyclohexyl phenyl ketone as a photo radical polymerization initiator Using.

  Next, a transparent master made of quartz glass was prepared. The transparent master was formed by integrally molding a substrate portion and a transfer portion, and a transfer portion (surface shape region) in which pyramidal diffraction gratings having apex angles of 62 ° were formed at intervals of 30 μm was used. Next, with the transfer part of the transparent master facing the cavity part, the substrate part of the transparent master was brought into contact with the upper end of the case member while positioning, and the transparent master was placed on the assembly member. At this time, the surface of the transfer portion of the transparent master and the surface of the resin composition were in close contact with each other.

Subsequently, while maintaining that state, the resin composition was exposed from the transparent master to obtain a sealing material that is a cured product of the resin composition. An ultra-high pressure mercury lamp (illuminance: 11.6 mW / cm ² , integrated exposure: 3000 mJ / cm ² ) was used as a light source for exposure.

  Then, the transparent master was peeled from the sealing material to obtain a light emitting diode which was an optical semiconductor device. The surface shape of the sealing material faithfully transferred the surface shape of the transfer portion of the transparent master, and was the shape of a pyramidal diffraction grating.

(Example 2)
It carried out similarly to Example 1 until filling of the resin composition. Next, a hemispherical lens made of polymethylmethacrylate as an optical element was placed while being aligned on the surface of the resin composition filled in the cavity, with the flat surface facing the cavity. . At this time, the surface of the resin composition and the flat surface of the hemispherical lens were in close contact with each other.

Subsequently, while maintaining that state, the resin composition was exposed from above the hemispherical lens to obtain a sealing material that is a cured product of the resin composition. An ultra-high pressure mercury lamp (illuminance: 11.6 mW / cm ² , integrated exposure: 3000 mJ / cm ² ) was used as a light source for exposure. Thus, a light emitting diode which is an optical semiconductor device was obtained. The hemispherical lenses were sufficiently strongly bonded to the encapsulant, and no voids were formed at their interfaces.

(Example 3)
It carried out similarly to Example 1 until filling of the resin composition. Separately, a coating film of the same resin composition as that used in Example 1 was formed. Next, with the surface of the coating film in contact with the transfer part of the transparent master used in Example 1, the resin composition is sufficiently exposed and cured, and a pyramid-shaped diffraction grating is provided on one side. A resin film (film thickness: about 1 mm) was formed.

  Next, the resin film as an optical element was placed while being aligned on the surface of the resin composition filled in the cavity portion with the flat surface facing the cavity portion. At this time, the surface of the resin composition and the flat surface of the resin film were in close contact.

Subsequently, while maintaining that state, the resin composition was exposed from above the resin film to obtain a sealing material that is a cured product of the resin composition. An ultra-high pressure mercury lamp (illuminance: 11.6 mW / cm ² , integrated exposure: 3000 mJ / cm ² ) was used as a light source for exposure. Thus, a light emitting diode which is an optical semiconductor device was obtained. The resin film was sufficiently strongly bonded to the sealing material, and no voids were formed at the interface between them.

Example 4
The same procedure as in Example 1 was performed until the assembly member was manufactured. Next, a resin composition containing a thermally polymerizable compound was poured into the cavity portion and filled. This resin composition contained an epoxy resin as a thermally polymerizable compound. Next, the sealing material was obtained by fully heating and hardening the resin composition with which the cavity part was filled. Separately, in the same manner as in Example 3, a resin film (film thickness: about 1 mm) provided with a pyramid-shaped diffraction grating on one side was formed.

  Subsequently, the same resin composition as that used in Example 1 was potted on the surface of the sealing material. Further, the resin film as an optical element is placed on the resin composition coating film while being aligned on the surface of the resin composition coating film with the flat surface facing the cavity portion. did. At this time, the coating film surface of the resin composition and the flat surface of the resin film were in close contact.

Subsequently, while maintaining the state, the coating film of the resin composition was exposed from above the resin film to obtain an adhesive layer that is a cured product of the resin composition. An ultra-high pressure mercury lamp (illuminance: 11.6 mW / cm ² , integrated exposure: 3000 mJ / cm ² ) was used as a light source for exposure. Thus, a light emitting diode which is an optical semiconductor device was obtained. The sealing material and the resin film were sufficiently strongly bonded via the adhesive layer, and no void was generated at the interface between them.

  The optical semiconductor device obtained in Examples 1 to 4 was supplied with a current of 20 mA at 3.2 V, and the light emitting diode element was turned on. In the optical semiconductor devices of Examples 1, 3, and 4, it was confirmed that the light emitted from the light emitting diode element was bent in two directions of the slope of the pyramid shape. In the optical semiconductor device of Example 2, it was confirmed that the emitted light from the light emitting diode element was condensed in the center direction by the hemispherical lens.

It is a schematic front view which shows an example of the conventional bullet-type light emitting diode. It is a schematic cross section which shows an example of the conventional chip-type light emitting diode. It is process sectional drawing which shows typically the manufacturing method of the optical semiconductor device which concerns on embodiment. It is process sectional drawing which shows typically the manufacturing method of the optical semiconductor device which concerns on another embodiment. It is process sectional drawing which shows typically the manufacturing method of the optical semiconductor device which concerns on another embodiment. It is process sectional drawing which shows typically the manufacturing method of the optical semiconductor device which concerns on another embodiment.

Explanation of symbols

  300, 400, 500, 600 ... Light emitting diode, 301a, b ... Lead frame, 302 ... Cavity, 305 ... Light emitting diode element, 307 ... Case member, 308 ... Wire, 310, 410, 510, 610 ... Sealing material, 315: Resin composition, 320: Connection layer, 350: Assembly member, 370, 470 ... Transparent master, 400 ... Light emitting diode, 580, 680 ... Optical element, 690 ... Paste or liquid adhesive layer, 695 ... After curing Adhesive layer.

Claims (14)

A method for manufacturing an optical semiconductor device comprising a light emitting element and a sealing material for sealing the light emitting element,
The surface of the resin composition and the surface of the predetermined shape are in close contact with a resin composition that contains a photopolymerizable compound and is curable only by light irradiation in which the light emitting element is immersed, and a transparent master having a surface of a predetermined shape In such a state that the resin composition is exposed through the transparent master, the surface of the resin composition is an optically transparent cured product, and the surface in close contact with the surface of the predetermined shape is The manufacturing method of an optical semiconductor device which has the process of obtaining the said sealing material used as the output surface of the light emitted from a light emitting element.   The said resin composition is filled in the cavity part which includes the said light emitting element, and also has the process of peeling the said transparent original disc from the surface of the said hardened | cured material after the process of obtaining the said sealing material. Manufacturing method of optical semiconductor device.   Before the step of obtaining the sealing material, the step of pouring the resin composition into the cavity portion, the step of closely adhering the surface of the predetermined shape of the transparent master to the surface of the poured resin composition, The method of manufacturing an optical semiconductor device according to claim 2, further comprising:   The transparent master has a flow path, and before the step of obtaining the sealing material, the transparent master is disposed on the opening of the cavity with the surface of the predetermined shape facing the cavity. The manufacturing of an optical semiconductor device according to claim 2, further comprising: a step of pouring the resin composition from the flow path into the cavity until the surface of the resin composition is in close contact with the surface of the predetermined shape. Method.   The manufacturing method of the optical semiconductor device as described in any one of Claims 1-4 whose said light emitting element is a light emitting diode element.   The manufacturing method of the optical semiconductor device as described in any one of Claims 1-5 whose said photopolymerizable compound is a (meth) acrylate type photopolymerizable compound. An optical semiconductor device comprising: a light emitting element; a sealing material that seals the light emitting element; and an optical element having a surface with a predetermined shape bonded to the sealing material,
The surface opposite to the surface of the predetermined shape in the optical element is in close contact with the light emission surface of the light emitted from the light emitting element in the sealing material,
The said sealing material is an optical semiconductor device which is an optically transparent hardened | cured material of the resin composition which contains a photopolymerizable compound and can be hardened | cured only by irradiation of light.   The optical semiconductor device according to claim 7, wherein the sealing material and the optical element are bonded simultaneously with obtaining the sealing material by curing the resin composition by exposure. An optical semiconductor device comprising: a light emitting element; a sealing material that seals the light emitting element; an optical element having a surface with a predetermined shape; and an adhesive layer that bonds the sealing material and the optical element. ,
The surface of the optical element opposite to the surface of the predetermined shape is in close contact with the light emitting surface of the light emitting element emitted from the light emitting element in the adhesive layer.
The optical semiconductor device, wherein the adhesive layer is an optically transparent cured product of a resin composition that contains a photopolymerizable compound and can be cured only by light irradiation.   The optical semiconductor device according to claim 9, wherein the sealing material and the optical element are bonded through the adhesive layer by curing the resin composition by exposure.   The optical semiconductor device according to claim 9, wherein the sealing material and the adhesive layer are mainly composed of the same material.   The optical semiconductor device according to claim 7, wherein the sealing material and the optical element are composed mainly of the same type of material.   The optical semiconductor device according to claim 7, wherein the light emitting element is a light emitting diode element.   The manufacturing method of the optical semiconductor device as described in any one of Claims 7-13 whose said photopolymerizable compound is a (meth) acrylate type photopolymerizable compound.

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